JP3692047B2 - Semiconductor manufacturing method and apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor manufacturing method and apparatus.
[0002]
[Prior art]
In a semiconductor device manufacturing process, for example, when a gate structure is formed by a dry etching process, a dry etching process is performed by introducing a process gas into a processing chamber to form plasma.
[0003]
When performing this dry etching process, it is very important to accurately control the pressure at which the process gas is introduced into the processing chamber, particularly in fabricating a microstructured device.
[0004]
For example, as described in Japanese Patent Application Laid-Open No. 5-13544, a diaphragm vacuum gauge (also called “capacitance manometer”) is used for pressure measurement in a processing chamber of a semiconductor manufacturing apparatus.
[0005]
This diaphragm vacuum gauge measures the pressure of gas by measuring the amount of deformation caused by the diaphragm receiving pressure. This diaphragm vacuum gauge is known in principle to have a constant sensitivity regardless of the type of gas to be measured, and is therefore widely used for pressure measurement in semiconductor manufacturing processes.
[0006]
The inside of the diaphragm vacuum gauge is evacuated, and the offset is adjusted so that the indicated value of the diaphragm vacuum gauge indicates zero in a state where the pressure is lower than the lowest detection pressure of the diaphragm vacuum gauge.
[0007]
By performing such an offset adjustment, the influence of fluctuation that causes the entire indication value of the diaphragm vacuum gauge to drift is avoided.
[0008]
[Problems to be solved by the invention]
However, in the conventional technology, as described above, although adjustment is performed at a pressure lower than the minimum detection pressure, it is completely recognized that the sensitivity of the indicated value of the vacuum gauge varies depending on the measurement pressure. However, accurate pressure measurement in various pressure ranges is difficult only by the offset adjustment as described above.
[0009]
In other words, the inventors of the present application actually calibrated the pressure sensitivity of the diaphragm vacuum gauge used for a long time in the semiconductor manufacturing process, and found that the sensitivity of the vacuum gauge fluctuated depending on the measured pressure. .
[0010]
A spinning rotor gauge was used as a reference vacuum gauge for calibration. Spinning rotor gauge has been studied as a secondary standard vacuum gauge as described in the "High Vacuum Pressure Traceability Working Activity Report" issued in March 2000 by the Technical Committee of the Japan Vacuum Industry Association. It is reported that the uncertainty of pressure measurement sensitivity is within several percent.
[0011]
A spinning rotor gauge and diaphragm gauge were attached to the processing chamber to calibrate the diaphragm gauge. A diaphragm vacuum gauge was attached to the processing chamber as a pressure gauge, and a spinning rotor gauge was attached as a reference vacuum gauge.
[0012]
Then, argon gas was used as the processing gas, and pressure indication values of the diaphragm vacuum gauge and the spinning rotor gauge at that time were recorded. By changing the flow rate of argon gas, the fluctuation of the indicated value in various pressure ranges was examined.
[0013]
First, the measurement was performed in an apparatus equipped with a new diaphragm vacuum gauge. The result is shown in FIG.
[0014]
The circle mark in FIG. 5 is a plot of the measurement result A of a new diaphragm vacuum gauge. At a pressure up to about 2 Pa, the new diaphragm vacuum gauge indicated value is approximately equal to the spinning rotor gauge indicated value. Only 4% variation was shown.
[0015]
Next, in the device equipped with the diaphragm vacuum gauge used about 100,000 times by the manufacturing process, the same calibration as described above is performed, and the measurement result as shown by the plot of □ (black square mark) in FIG. 5 is obtained. It was.
[0016]
The measurement result of the vacuum gauge used for a long time showed that the deviation of the indicated value of the diaphragm vacuum gauge from the spinning rotor gauge was within about 4% at around 2 Pa, but as the pressure decreased, the diaphragm vacuum gauge It has been found that the indicated value tends to be lower than the indicated value of the spinning rotor gauge.
[0017]
It was found that at about 0.1 Pa, the deviation of the indicated value dropped by about 27% compared to about 2 Pa.
[0018]
However, since such a deviation may be apparently caused by the sensitivity fluctuation of the spinning rotor gauge, the new diaphragm vacuum gauge was again calibrated.
[0019]
The X mark in FIG. 5 is a plot of the result B, but the deviation of the new diaphragm gauge is still within about 4% of the indicated value of the spinning rotor gauge as in the first experiment. It was.
[0020]
For this reason, the drop in the reading of the diaphragm vacuum gauge used about 100,000 times indicated by the black square plot is not caused by the moving fluctuation of the spinning rotor gauge, but is indicated by the diaphragm vacuum gauge itself. It was confirmed that this was due to the drop in value.
[0021]
Sensitivity fluctuations due to the pressure of the diaphragm vacuum gauge are caused by deposition of reaction products generated during the process on the diaphragm surface of the diaphragm vacuum gauge, resulting in fluctuations in the stress characteristics of the entire diaphragm, oxidation of the diaphragm, etc. It can be considered that this is caused by fluctuations in the stress characteristics of the diaphragm itself.
[0022]
It is considered that due to the sensitivity fluctuation mechanism, the stress deformation of the diaphragm is reduced, and the deviation of the indicated value is increased in the measurement at low pressure.
[0023]
When such a deviation of the indicated value occurs, a serious problem occurs in semiconductor device production.
[0024]
For example, when a gate structure of a semiconductor device is manufactured by an etching process, a process gas is introduced into the processing chamber so that the pressure in the processing chamber is about 0.2 Pa.
[0025]
When the diaphragm vacuum gauge of the etching apparatus is new, the process gas is introduced at a relatively accurate pressure and the process is executed. However, the diaphragm vacuum gauge used for processing about 100,000 wafers is used. In this case, since the indicated value of the diaphragm gauge is about 15% lower than the true value, the process gas is actually introduced at a pressure higher by about 15%.
[0026]
In addition, in the gate process and the like, a process of adding a small amount of gas such as oxygen to the process gas is performed in order to improve the etching shape. The optimum value of this addition amount varies depending on the pressure during the process. There must be. If the measured pressure value greatly fluctuates from the true value, there is a problem that the shape characteristics deteriorate due to an inappropriate gas addition amount.
[0027]
In particular, when manufacturing a device having a fine structure of 0.13 μm or less, if such a process pressure shift occurs, it may cause a decrease in yield and a manufacturing defect.
[0028]
In the prior art, since there is no recognition that the indicated value of the pressure gauge fluctuates, even if the indicated value of the pressure gauge changes over time, only offset adjustment is performed. In other words, effective measures against pressure fluctuations in measured values could not be taken, resulting in yield reduction and production defects.
[0029]
As a result, the price of devices has increased, leading to the problem of reduced price competitiveness in the device market.
[0030]
An object of the present invention is to realize a semiconductor manufacturing method and apparatus that can accurately calibrate pressure gauge sensitivity fluctuations due to pressure fluctuations, perform accurate pressure measurement in various pressure ranges, and perform manufacturing processing. .
[0031]
[Means for Solving the Problems]
In order to achieve the above object, the present invention is configured as follows.
(1) A processing gas is introduced into a processing chamber for processing an object to be processed, the pressure in the processing chamber is measured by a pressure detector, and the pressure in the processing chamber is controlled based on the measured pressure value, thereby producing a process. In the semiconductor manufacturing method, the processing gas is filled into the reference volume Vs so that the indicated value of the pressure detector indicates the reference value Ps, the filled gas is discharged into the comparison volume Vc, and the comparison is performed. The pressure Pc in the volume Vc and the reference volume Vs is measured by the pressure detector, a calibration formula is calculated from the pressure value Pc detected by the pressure detector, the reference value Ps, and Vc / Vs, and the pressure A sensitivity deterioration coefficient k for calibrating the sensitivity fluctuation due to the detection pressure fluctuation of the detector is obtained, the pressure detection value of the pressure detector is calibrated using the sensitivity deterioration coefficient k and the calibration equation, and the calibration is performed. Based on the pressure value By controlling the pressure of the inner, performing semiconductor manufacturing processes.
[0032]
(2) Preferably, in (1), the pressure in the processing chamber is controlled by controlling the flow rate of the processing gas into the processing chamber based on the calibrated pressure value.
[0033]
(3) Preferably, in (1), the pressure in the processing chamber is controlled by controlling the flow rate of the gas discharged from the processing chamber based on the calibrated pressure value.
[0034]
(4) A processing chamber for processing an object to be processed, a pressure detector for measuring the pressure in the processing chamber, a gas introduction means for introducing a processing gas into the processing chamber and the pressure detector, the processing chamber and the pressure Based on the pressure value measured by the pressure detector and the gas discharge means for discharging the gas in the detector, the gas introduction means and the gas discharge means are controlled to adjust the pressure in the processing chamber, and the manufacturing process In the semiconductor manufacturing apparatus having the control means, the control means controls the gas introduction means so that the indicated value of the pressure detector indicates the reference value Ps, so that the processing gas is contained in the reference volume Vs. The filled gas is discharged into the comparison volume Vc, the pressure Pc in the comparison volume Vc and the reference volume Vs is measured by the pressure detector, the pressure value Pc detected by the pressure detector, A reference value Ps; A calibration equation is calculated from Vc / Vs, a sensitivity deterioration coefficient k for calibrating the sensitivity fluctuation due to the pressure fluctuation detected by the pressure detector is obtained, and the pressure detection is performed using the sensitivity deterioration coefficient k and the calibration expression. The pressure detection value of the chamber is subjected to sensitivity calibration, and based on the calibrated pressure value, the gas introduction means or the gas discharge means is controlled to adjust the pressure in the processing chamber to perform the semiconductor manufacturing process.
[0035]
(5) Preferably, in the above (4), a storage means is provided inside the control means, and the calculated sensitivity deterioration coefficient k is stored in the storage means.
(6) A processing gas is introduced into a processing chamber for processing an object to be processed, the pressure in the processing chamber is measured by a pressure detector, and the pressure in the processing chamber is controlled based on the measured pressure value, so that the manufacturing process is performed. In the semiconductor manufacturing control program for manufacturing the semiconductor, the processing gas is filled in the reference volume Vs so that the indicated value of the pressure detector indicates the reference value Ps, and the filled gas is filled in the comparison volume Vc. The pressure Pc in the comparison volume Vc and the reference volume Vs is measured by the pressure detector, and the calibration equation is calculated from the pressure value Pc detected by the pressure detector, the reference value Ps, and Vc / Vs. Calculating a sensitivity deterioration coefficient k for calibrating the sensitivity variation due to the pressure variation detected by the pressure detector,
Using the sensitivity deterioration coefficient k and the calibration equation , the pressure detection value of the pressure detector is subjected to sensitivity calibration, and the pressure in the processing chamber is controlled based on the calibrated pressure value, thereby manufacturing the semiconductor. I do.
(7) Preferably, in (1) above, the sensitivity fluctuation due to the detected pressure fluctuation of the pressure detector is a sensitivity fluctuation due to deterioration over time.
[0036]
According to the present invention, a gas having a known volume is filled with a gas in a high pressure range where the deviation of the indicated value of the pressure measuring instrument is small enough not to cause a problem. The pressure at this time is measured, and this gas is discharged into a processing chamber whose volume is several tens of times or more, and the pressure at a low pressure is measured. And based on the measured value at the time of high pressure, the measured value at the time of low pressure is calculated, and based on this, the value measured at the time of low pressure is calibrated.
[0037]
Based on these monitoring results, it is possible to manufacture the microstructure with high reliability by determining the end time of the process and controlling the reaction state.
[0038]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings.
FIG. 1 is a schematic configuration diagram of an etching apparatus which is a semiconductor manufacturing apparatus according to an embodiment of the present invention.
[0039]
This embodiment is an example in which a microwave plasma apparatus is used as an apparatus for performing an etching process on a metal thin film, for example.
[0040]
In FIG. 1, an etching process is performed on a wafer 102 in a processing chamber 100 of an etching apparatus. The processing gas 103 is guided to the processing chamber 100 with the flow rate adjusted, and is converted into plasma by a high frequency or microwave introduced into the processing chamber 100, and the wafer 102 is etched.
[0041]
At this time, the reaction product gas generated by the chemical reaction of the wafer 102, the inner surface of the processing chamber 100, and the internal components with the processing gas 103 is exhausted by the pump 109 through the variable flow valve 105.
[0042]
Here, the pressure inside the processing chamber 100 is measured by a pressure gauge (vacuum gauge) 106.
[0043]
The conductance of the variable flow valve 105 is adjusted so that the measurement value of the pressure gauge 106 is maintained at a desired pressure, for example, 2 Pa. The operation control of the variable flow valve 105 is executed by the system control device 110 including microwave and high frequency control.
[0044]
A diaphragm vacuum gauge is generally used as the pressure gauge 106. As described above, the diaphragm vacuum gauge measures the pressure by measuring the amount of deformation of the diaphragm by the pressure acting on the diaphragm.
[0045]
Vacuum gauges that can measure pressures of about several Pa include ionization vacuum gauges and spinning rotor gauges in addition to diaphragm vacuum gauges, but the sensitivity of each of these changes depending on the type of gas being measured. There is a nature.
[0046]
For this reason, in a semiconductor manufacturing process using various types of process gases, stable measurement is difficult and is not used much.
[0047]
On the other hand, diaphragm vacuum gauges are widely used in semiconductor processes because they have a feature that the amount of deformation of the diaphragm depends only on pressure regardless of the type of gas.
[0048]
However, as described above, in the actual device production process, when the diaphragm vacuum gauge is used for a long time, the sensitivity varies depending on the pressure.
[0049]
In order to calibrate the pressure fluctuation of such a diaphragm gauge, the following method is performed in one embodiment of the present invention.
[0050]
FIG. 2 is an operation flowchart for calibrating the pressure fluctuation of the diaphragm vacuum gauge. This operation program is stored in the system control device 110 or by an external storage means, and based on this, the system control device 110 controls the operation of the valve 105 and the like.
[0051]
First, in step S100 of FIG. 2, it is determined whether or not it is a periodic check. If it is a periodic check, the process proceeds to step S101.
[0052]
That is, in one embodiment of the present invention, calibration is performed regardless of whether the pressure gauge 106 is new or has been used for a long time.
[0053]
In step S101, the pressure gauge 106 (standard volume 104 is Vs) and the inside of the processing chamber 102 (volume Vc) are evacuated to a high vacuum state equal to or lower than the measurement sensitivity of the pressure gauge 106.
[0054]
Next, in step S102, the zero point of the pressure gauge 106 is corrected, and the drift amount of the entire indicated value is made zero.
[0055]
Subsequently, in step S <b> 103, the gas valve 101 is opened, and an inert gas such as argon gas is introduced into the processing chamber 100 as the processing gas 103. In step S104, the pressure at this time is measured by the pressure gauge 106, and if it is a diaphragm vacuum gauge, for example, 12 Pa is introduced. The indicated value of the pressure gauge 106 at this time is Ps. At this time, the isolation valve 111 is opened and the standard pressure gauge 108 checks whether or not the pressure measurement value of the pressure gauge 106 is accurate.
[0056]
Next, in step S105, the processing gas valve 101 and the isolation valves 107 and 111 are closed, and the inside of the processing chamber 102 is exhausted to a high vacuum state. In step S106, after the variable flow valve 105 is completely closed, the isolation valve 107 is opened, and the gas having the pressure Ps (reference value) sealed in the pressure gauge is released into the processing chamber 102. The pressure in the processing chamber 102 at this time is Pc.
[0057]
Here, the volume inside the pressure gauge 106 is constant, and this volume is defined as Vs (reference volume) as the standard volume 104, and the volume of the processing chamber 102 is defined as Vc (comparison volume).
[0058]
The gas of pressure Ps and volume Vs sealed inside the pressure gauge 106 is discharged into the processing chamber 102 to become pressure Pc and volume Vc + Vs. At this time, the following equation (1) is satisfied. .
Pc = Ps / (1 + Vc / Vs) --- (1)
Vs is about 1 liter, including the size of the diaphragm vacuum gauge 106 and the volume of piping that is attached to the isolation valve 107.
[0059]
The volume of the processing chamber 102 is Vc, which is about 100 liters.
[0060]
Considering these, when a gas of 12 Pa is initially sealed as Ps, the value of Pc is 0.119 Pa from the equation (1).
[0061]
By the way, as shown in FIG. 5, the indicated value of the diaphragm vacuum gauge used is almost the same as that of a new vacuum gauge when it exceeds about 1.5 Pa, and is correct to the extent that there is no problem in the process. I know that.
[0062]
Therefore, the Pc value 0.119 Pa calculated based on this value can also be regarded as a correct value to the extent that there is no problem in the process.
[0063]
On the other hand, if the value of Pc actually measured by the diaphragm gauge of the product used is Pm, the measured value is about 27% lower than that of the new product according to the graph shown in FIG. It contains enough error.
[0064]
This value can then be calibrated by comparing it with the calculated Pc value of 0.119 Pa.
[0065]
For example, the shape of the curve obtained from the calibration result of the used product shown in FIG. 5 can be expressed by the following equation (2).
R = S−exp (−k · P) −−− (2)
Here, R is the manometer indication value / spinning R gauge indication value on the vertical axis, P is the spinning R gauge indication value on the horizontal axis, and S is the value of R when the pressure is sufficiently high (1.05 in FIG. 5). ), K is a sensitivity degradation coefficient.
[0066]
The curve represented by this equation (2) can be used as a calibration curve for the diaphragm vacuum gauge 106 used.
[0067]
In this case, if Pm / Pc is substituted for R and calibration pressure Pc is substituted for P, the following equation (3) is obtained.
[0068]
Pm / Pc = S−exp (−k · Pc) −−− (3)
As a calibration method of the diaphragm vacuum gauge 106, for example, if the actually measured Pm value is 0.008 Pa with respect to the calculated Pc value of 0.119 Pa, the sensitivity deterioration coefficient k is expressed by the equation (3). Is calculated as 8.18.
[0069]
By using the value of k and the expression (3), it is possible to convert the value of the diaphragm vacuum gauge 106 actually measured thereafter into a correct value.
[0070]
That is, in step S107, the pressure is measured by the pressure gauge 106, and the sensitivity deterioration coefficient k is calculated in step S108 and stored in a memory or the like in the system control apparatus 110.
[0071]
In step S109, the measurement value sent from the vacuum gauge 106 to the system control device 110 is calibrated using the equation (3), and the value is regarded as a true pressure, and the pressure control in the processing chamber 102 is performed. Used for.
[0072]
This pressure control is performed by the system control device 110, but can also be performed by controlling the opening of the processing gas valve 101 or by controlling the opening of the variable flow valve 105.
[0073]
It should be noted that the calibration according to the equation (3) may be performed on the set pressure value in the process recipe instead of the pressure value from the vacuum gauge 106. In this case, the value from the pressure gauge 106 is used in the system control device 110 as it is.
[0074]
Further, as the standard pressure gauge 108, for example, the above-described spinning rotor gauge or a new diaphragm vacuum gauge is used.
[0075]
During a normal process or when the apparatus is on standby, the inside is evacuated to a high vacuum state and the isolation valve 111 is closed, so that reaction products enter the standard pressure gauge 108 and cause sensitivity fluctuations. Do not.
[0076]
When calibrating the pressure gauge 106, the isolation valve 111 is opened, an appropriate amount of argon gas or the like is introduced as the processing gas 103, and the indicated value of the pressure gauge 106 when the pressure inside the processing chamber 102 is kept constant is the standard pressure. Calibrate to the indicated value of the total 108.
[0077]
Using the calibration procedure as described above, the pressure value is controlled with respect to the calculated pressure value, and the gate structure of the semiconductor device is manufactured by an etching process.
[0078]
Next, an example of a gate structure processed by the etching process will be described.
[0079]
FIG. 3 is a cross-sectional view of an example of a gate processing shape.
[0080]
In FIG. 3, etching ions, radicals, and the like generated by plasma collide with the polysilicon layer 302 below from above the cap mask 301, and the etching reaction proceeds, whereby a gate structure having a shape as shown in FIG. Is formed on the silicon 303 layer.
[0081]
The width of the cap mask 301 is defined as a width X304, and the width of a portion where the polysilicon 302 is in contact with the underlying silicon 303 layer is defined as a width Y305. A gate structure in which the width Y and the width X are equal is an ideal structure. However, when the process is actually performed, the value of Y−X increases and a defect occurs.
[0082]
Y-X will be referred to as fat amount. An electron synchrotron resonance (ECR) plasma etching apparatus is used as an etching apparatus, and hydrogen bromide and oxygen gas are used as process gases.
[0083]
When hydrogen bromide is flowed at a rate of 80 ml / min, oxygen gas is added in a trace amount of several ml / min, so that the amount of weight can be reduced and manufacturing defects can be minimized. Exists.
[0084]
The situation is shown in FIG. For example, when the total pressure in the process is 0.4 Pa, the amount of fat can be suppressed to almost zero by adding 3 ml / min of oxygen. However, when the pressure is 0.45 Pa, even if oxygen is added at 3 ml / min, the amount of fat becomes 40 nm to 60 nm, resulting in a defective product.
[0085]
If the measured value of the total pressure during the process fluctuates with respect to the actual pressure, the amount of oxygen gas added in a small amount exceeds the appropriate range, and what has been able to produce good products so far is defective. It will change to the conditions to produce.
[0086]
As shown in FIG. 5, such a situation occurs when the sensitivity fluctuation occurs in the pressure measurement value of the diaphragm vacuum gauge.
[0087]
Therefore, before starting the process, the diaphragm vacuum gauge as described above is calibrated so that the process based on the correct pressure can be performed. For example, the above-described calibration procedure of the diaphragm vacuum gauge 106 is performed when checking the plasma stability during the process and the number of foreign matters generated in the pre-start inspection that is performed at regular time every day.
[0088]
Alternatively, if the calibrated result exceeds the allowable range, an instruction may be automatically issued to perform maintenance or replacement of the pressure gauge 106.
[0089]
In this case, for example, when the process is continuously performed at a total pressure of 0.2 Pa and an oxygen addition amount of 3 ml / min in FIG. 4, the fat amount exceeds 40 nm due to the change in the indicated value of the diaphragm vacuum gauge 106. There is no such thing.
[0090]
Therefore, it is possible to proceed with the process while minimizing defective products, ensuring a high yield, and minimizing the production cost.
[0091]
On the other hand, some aluminum wiring etching processes are performed at a pressure of about 1 to 2 Pa, and in this pressure region, the sensitivity fluctuation of the pressure gauge is at a level with no problem. It is not necessary to perform the calibration means as described above when etching.
[0092]
By the way, although one embodiment of the present invention has shown a problem peculiar to the gate structure, there are other metal gate structures. In addition, there is a process that requires a microfabrication process by the same pressure calibration in the etching of the metal wiring structure other than the gate process and the etching of the insulating film.
[0093]
In the embodiment of the present invention, the dry etching process is described as an example. However, the CVD process and the sputtering process can be performed in the same manner.
[0094]
In any process, gas analysis can be performed in the same manner, the process can be controlled, and production can be performed.
[0095]
In the above-described example, the standard pressure gauge 108 and the isolation valve 111 are calibrated so as to be provided. However, these are not necessarily required and can be omitted.
[0096]
【The invention's effect】
According to the present invention, it is possible to realize a semiconductor manufacturing method and apparatus that can accurately calibrate pressure gauge sensitivity fluctuations due to pressure fluctuations, perform accurate pressure measurement in various pressure ranges, and perform manufacturing processing. .
[0097]
In addition, since the etching process can be controlled more accurately, a device having a finer structure can be manufactured.
[0098]
In addition, the production cost can be reduced by improving the yield.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram of a semiconductor manufacturing apparatus according to an embodiment of the present invention.
FIG. 2 is an operation flowchart in the example of FIG.
FIG. 3 is a diagram illustrating an example of a defect due to a gate structure and a fat amount.
FIG. 4 is a graph showing an example of conditions for occurrence of defective etching.
FIG. 5 is a graph showing calibration results of manometer indicated values.
[Explanation of symbols]
101 Processing gas valve 102 Wafer 103 Processing gas 105 Variable flow valve 106 Pressure gauge 107, 111 Isolation valve 108 Standard pressure gauge 109 Pump 110 System controller

Claims (7)

Introducing a processing gas into a processing chamber for processing an object to be processed, measuring a pressure in the processing chamber with a pressure detector, and controlling the pressure in the processing chamber based on the measured pressure value to perform a manufacturing process. In a semiconductor manufacturing method,
The processing gas is filled into the reference volume Vs so that the indicated value of the pressure detector indicates the reference value Ps,
The filled gas is discharged into the comparison volume Vc,
The pressure Pc at the comparison volume Vc and the reference volume Vs is measured by the pressure detector,
A calibration equation is calculated from the pressure value Pc detected by the pressure detector, the reference value Ps, and Vc / Vs, and a sensitivity deterioration coefficient k for calibrating the sensitivity variation due to the detected pressure variation of the pressure detector is calculated. Seeking
Using the sensitivity deterioration coefficient k and the calibration formula , the pressure detection value of the pressure detector is calibrated.
A semiconductor manufacturing method, wherein a semiconductor manufacturing process is performed by controlling the pressure in the processing chamber based on the calibrated pressure value.   2. The semiconductor manufacturing method according to claim 1, wherein the pressure in the processing chamber is controlled by controlling the flow rate of the processing gas into the processing chamber based on the calibrated pressure value. Manufacturing method.   2. The semiconductor manufacturing method according to claim 1, wherein the pressure in the processing chamber is controlled by controlling the flow rate of the gas discharged from the processing chamber based on the calibrated pressure value. Production method. A processing chamber for processing a workpiece; a pressure detector for measuring a pressure in the processing chamber; a gas introduction means for introducing a processing gas into the processing chamber and the pressure detector; and the processing chamber and the pressure detector. Gas discharge means for discharging the gas, and control for performing the manufacturing process by controlling the gas introduction means and the gas discharge means to adjust the pressure in the processing chamber based on the pressure value measured by the pressure detector In a semiconductor manufacturing apparatus having means,
The control means includes
The gas introduction means is controlled so that the indicated value of the pressure detector indicates the reference value Ps, the processing gas is filled into the reference volume Vs, and the filled gas is discharged into the comparison volume Vc. The pressure Pc in the volume Vc and the reference volume Vs is measured by the pressure detector, a calibration formula is calculated from the pressure value Pc detected by the pressure detector, the reference value Ps, and Vc / Vs, and the pressure A sensitivity deterioration coefficient k for calibrating the sensitivity fluctuation due to the detector detection pressure fluctuation is obtained,
Sensitivity calibration is performed on the pressure detection value of the pressure detector using the sensitivity degradation coefficient k and the calibration equation, and the gas introduction unit or the gas discharge unit is controlled based on the calibrated pressure value to control the chamber. A semiconductor manufacturing apparatus characterized in that the semiconductor manufacturing process is performed by adjusting the pressure of the semiconductor. 5. The semiconductor manufacturing apparatus according to claim 4, further comprising a storage unit inside the control unit, wherein the calculated sensitivity deterioration coefficient k is stored in the storage unit. A processing gas is introduced into a processing chamber for processing an object to be processed, the pressure in the processing chamber is measured by a pressure detector, and the manufacturing process is controlled by controlling the pressure in the processing chamber based on the measured pressure value. In a semiconductor manufacturing control program for manufacturing a semiconductor,
The processing gas is filled into the reference volume Vs so that the indicated value of the pressure detector indicates the reference value Ps,
The filled gas is discharged into the comparison volume Vc,
The pressure Pc at the comparison volume Vc and the reference volume Vs is measured by the pressure detector,
A calibration equation is calculated from the pressure value Pc detected by the pressure detector, the reference value Ps, and Vc / Vs, and a sensitivity deterioration coefficient k for calibrating the sensitivity variation due to the detected pressure variation of the pressure detector is calculated. Seeking
Using the sensitivity deterioration coefficient k and the calibration formula , the pressure detection value of the pressure detector is calibrated.
A semiconductor manufacturing control program for performing a semiconductor manufacturing process by controlling the pressure in the processing chamber based on the calibrated pressure value. 2. The semiconductor manufacturing method according to claim 1, wherein the sensitivity variation due to the detected pressure variation of the pressure detector is a sensitivity variation due to deterioration over time.

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