JP3645854B2 - Cold cathode display device and manufacturing method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a cold cathode display device and a method for manufacturing the same, and more particularly to a high-definition display applicable to a stereoscopic television or the like in a cold cathode display device using a cold cathode that emits electrons by an electric field.
[0002]
[Prior art]
The flat display, which is a conventional cold cathode display device, includes PDP (Plasma Display Panel), PALC (Plasma Addressed Liquid Crystal), LCD (Llquid Crystal Display), EL (Electroluminescent Display), FED (Fild Display, etc.). Have been developed and their -part has already been put into practical use.
[0003]
On the other hand, three-dimensional display by holography and the like uses control of the wavefront of light, so a high-definition display having a resolution about the wavelength of the light to be used is required, but at present, a display satisfying this has been realized. Absent.
[0004]
[Problems to be solved by the invention]
As a result of examining the prior art, the present inventor has found the following problems.
PDP, which is a conventional flat display, discharges between electrodes in a mixed gas of xenon, neon, helium, etc. confined in a limited space in the pixel cell, and is applied to the surroundings by ultraviolet rays generated at that time. The phosphor is stimulated to emit light. At present, when the cell size is reduced, energy loss at the cell wall is relatively increased, and the utilization efficiency of ultraviolet rays is reduced. Moreover, since it is necessary to increase the gas pressure as the cell size decreases in order to obtain the same minimum discharge start voltage, the state of the art cannot consider a cell having a size of micron or less. The situation is the same for PALC that uses a discharge cell similar to PDP as a switch.
[0005]
The LCD has a structure in which liquid crystal is sandwiched between two glass plates. In this case, if the thickness of the liquid crystal layer is small, the degree of modulation of light becomes small. Therefore, at present, a liquid crystal layer having a thickness of about 1 to 2 microns is required. Since the electric field applied to the electrodes on both sides of the liquid crystal layer spreads in the depth direction of the liquid crystal layer, in this case as well, it is considered difficult to modulate a liquid crystal cell of micron or less.
[0006]
Since EL is an all-solid thin-film type, it is most suitable for cell miniaturization. So far, basic devices with a pixel pitch of about 20 microns have been prototyped. In the conventional EL, the thickness of the light emitting layer is required to be about 1 micron, and furthermore, it is necessary to provide insulating layers having substantially the same thickness on both sides of the light emitting layer. Realization of this display is considered difficult.
[0007]
With LEDs and LDs made of compound semiconductors, it is possible to make individual light-emitting layers finer to nano-size by means of semiconductor microfabrication technology, but it is difficult to monolithically produce the three colors required for full-color displays. It is necessary to combine each material. It is currently difficult to grow light emitting layers made of different materials on the same substrate.
[0008]
As described above, it is difficult to realize a high-definition display having a pixel size of about submicron necessary for stereoscopic display in holography, integral photography, and the like by conventional display methods and display technologies.
[0009]
An object of the present invention is to provide a technique capable of high-definition display necessary for stereoscopic display such as holography.
Another object of the present invention is to provide a technique capable of emitting light with high luminance.
[0010]
Another object of the present invention is to provide a technique capable of eliminating the need for a cathode bus formed in a light emitting element.
The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.
[0011]
[Means for Solving the Problems]
Of the inventions disclosed in this application, the outline of typical ones will be briefly described as follows.
(1) It consists of a light emitting layer that emits red, green, and blue light respectively formed on the red, green, and blue electrode layers stacked with an insulating film interposed therebetween. An anode-side panel on which a phosphor layer is formed; a cathode-side panel on which the anode-side panel is disposed; and a cathode-side panel on which a thin-film layer having a photoelectron emission effect that emits an electron beam when irradiated with a light beam is formed; Means for irradiating the panel with a light beam; means for controlling the irradiation position of the light beam; and means for applying an electric field between the anode side panel and the cathode side panel. A cold cathode display device that accelerates the emitted electron beam by the electric field and irradiates the phosphor layer to emit light.
[0012]
(2) It comprises an anode part on which a phosphor layer is formed and a cathode side panel on which a thin film layer having a photoelectron emission effect is formed, wherein the anode side panel and the cathode side panel are arranged to face each other, and the cathode side In a method for manufacturing a cold cathode display device in which the phosphor layer emits light by an electron beam emitted from a panel, a step of forming a cathode layer on the cold cathode side panel, and a surface of the cathode layer By depositing very small amounts by CVD Forming a thin film layer having a photoelectron emission effect of nano-sized microcrystals.
[0013]
(3) It comprises an anode part on which a phosphor layer is formed and a cathode side panel on which a thin film layer having a photoelectron emission effect is formed. The anode side panel and the cathode side panel are arranged to face each other, and the cathode side In a method for manufacturing a cold cathode display device in which the phosphor layer emits light by an electron beam emitted from a panel, a step of forming a first electrode layer on the anode side panel, and a surface of the first electrode layer Forming a first insulating layer, forming a second electrode layer on the surface of the first insulating layer, and forming a second insulating layer on the surface of the second electrode layer. And a step of forming a third electrode layer on the surface of the second insulating layer, and a groove reaching the first electrode layer and the second electrode layer from the third electrode layer, respectively. And red or green on the surface of the first to third electrode layers, And forming a phosphor layer which emits light in any color.
[0014]
According to the above-described means, there is provided means for generating a light beam to be irradiated on the cathode side panel and means for controlling the irradiation position of the light beam, and an electron beam is emitted by irradiation of the light beam from the light beam generating means. By providing the cathode side panel with a thin-film layer that emits (photoelectron beam) on the cathode side panel, display with a photoelectron beam according to the irradiation area (aperture) of the light beam is possible, as shown in the principle section below. Therefore, high-resolution light emission corresponding to a high-definition photoelectron beam can be obtained. As a result, high resolution display can be performed.
[0015]
(principle)
FIG. 1 is a diagram for explaining the basic principle of high-definition display according to the present invention. However, FIG. 1A is a diagram for explaining the schematic configuration of the cold cathode display device according to the present invention, and FIG. 1B is a diagram for explaining the intensity distribution of the light beam emitted from the laser device. FIG.
[0016]
As shown in FIG. 1 (a), a conductive cathode layer 105 is formed on the surface of a back substrate 104 such as glass, and a photocathode nanocrystal made of a photoelectron emitting material is formed on the upper surface of the cathode layer 105. The deposited photoelectron emission layer 106 is formed. As the photocathode nanocrystal material (photocathode microcrystal material), a low work function material such as cesium, potassium, or iodine is preferable.
[0017]
Further, a transparent anode layer 102 is deposited on the surface of the front glass substrate 101, and a phosphor or rare earth of a II-VI group compound semiconductor such as ZnS (zinc sulfide) or ZnO (zinc oxide) is deposited on the upper surface of the transparent anode layer 102. A phosphor nanocrystal layer 103 made of nano-sized microcrystals made of an oxide phosphor is deposited.
[0018]
These substrates (front glass substrate 101 and back substrate 104) are arranged so that the surfaces on which photoelectron emission layer 106 and phosphor nanocrystal layer 103 are formed are opposed to each other. A light beam 109 emitted from a laser device 107 using a light emitting diode as a light source is incident through a mirror 108 to irradiate the photoelectron emission layer 106. At this time, a predetermined voltage is applied from the power source 112 between the cathode layer 105 and the transparent anode layer 102.
[0019]
Therefore, the photoelectrons 110 emitted from the photoelectron emission layer 106 formed by depositing the photocathode microcrystals are accelerated by the electric field applied between the cathode layer 105 and the transparent anode layer 102, and the phosphor microcrystals are converted into the phosphor microcrystals. The phosphor nanocrystal layer 103 formed by deposition is stimulated, and the phosphor emits light and is emitted as visible light 111. As a result, since the acceleration of the photoelectrons 110 can be easily controlled, high-luminance light emission can be easily obtained by accelerating the photoelectrons 110 with a high voltage.
[0020]
Further, since the scanning of the light beam 109 is performed by the mirror 108, a cathode bus for controlling the generation position of the electron beam, that is, the light emission position becomes unnecessary. As a result, the number of steps required for manufacturing the back substrate 104 can be reduced, and the manufacturing efficiency of the cold cathode display device can be improved.
[0021]
In principle, the light beam diameter r0 emitted from the laser device 107 such as a laser diode or a light emitting diode can be reduced to a size of about the wavelength. For example, as shown in FIG. 1A, when the light beam 109 is incident from the back surface of the back substrate 104 and is irradiated to the photoelectron emission layer 106, the light beam diameter r0 in the photoelectron emission layer 106 is about the wavelength. It becomes about a few μm. Therefore, the beam diameter (electron beam diameter) of the photoelectrons emitted by photoexcitation is about the same size.
[0022]
Further, as shown in the light intensity graph of FIG. 1B, it is known that the intensity (light intensity distribution 114) of a light beam from a normal laser diode or light emitting diode has a Gaussian distribution. On the other hand, in order to emit photoelectrons from the photoelectron emission layer 106, it is necessary to have a light intensity equal to or higher than the intensity corresponding to the photoelectron emission material and the wavelength of the light beam (hereinafter referred to as threshold intensity). Therefore, in the present invention, by controlling the output of the laser diode or the light emitting diode, that is, the intensity of the light beam, the light intensity of the light beam irradiated to the photoelectron emission layer 106 is not less than the threshold intensity 113 indicated by a dotted line. Is configured to control the beam diameter r1. That is, the beam diameter (electron beam diameter) of the photoelectrons irradiated from the photoelectron emission layer 106 toward the phosphor nanocrystal layer 103 is controlled by controlling the light beam diameter r1 which becomes the threshold intensity 113 or more. By making it smaller than r0, high-definition display is possible. However, when the diameter of the electron beam emitted from the photoelectron emission layer 106 is controlled by controlling the intensity of the light beam, the photoelectron emission layer 106 is limited to nano-sized microcrystals as shown in FIG. The flat general deposited film may be used.
[0023]
Furthermore, in the present invention, as shown in FIGS. 1A and 1B, since the photoelectron emission layer 106 is separated from the upper surface of the cathode layer 105, each photoelectron emission layer 106 is formed. An electron beam corresponding to the size of the nanocrystal for the photocathode will be emitted. That is, as shown in FIG. 1 (b), when the light beam diameter r1 at which the threshold intensity is 113 or more is substantially equal to the photocathode nanocrystal, the electron beam emitted from the photoelectron emitting layer 106 is The light is emitted only from one photocathode nanocrystal 115. Further, each photocathode nanocrystal 115 forming the photoelectron emitting layer 106 is smaller than the light beam diameter r1 at which the threshold intensity is 113 or more, and a plurality of photocathode nanocrystals 115 are included in the light beam diameter r1. When entering, an electron beam is emitted from each photocathode nanocrystal 115 within the light beam diameter r1. The beam diameter of each electron beam at this time is a beam diameter corresponding to the size of the photocathode nanocrystal 115 from which each electron beam is emitted. That is, since each beam diameter is a narrower electron beam, higher-definition display is possible.
[0024]
In addition, by making the nanocrystal 115 for the photocathode into a nanosize crystal, the electron emission surface size can be reduced (electron beam diameter can be reduced) and the photoelectron emission probability (emission efficiency) can be improved. That is, the electron affinity is reduced by forming the crystal size in nano-size and increasing the optical gap, and as a result, the photoelectron emission efficiency is increased by further reducing the work function of the material.
[0025]
Further, in the present invention, as shown in FIG. 1 (b), the phosphor has the same fine crystal, for example, the phosphor nanocrystal layer 103 made of nanocrystals. It is possible to emit light with high resolution corresponding to the above. The structure of the phosphor is not limited to the nanocrystal structure as in the structure of the photoelectron emission layer 106 described above. Even when the phosphor layer is flattened similarly to the conventional phosphor, the structure of the phosphor is high-definition. Needless to say, sufficient high-resolution light emission corresponding to an electron beam can be obtained.
[0026]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described in detail with reference to the drawings together with embodiments (examples) of the invention.
Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiment of the invention, and the repetitive description thereof is omitted.
[0027]
2 and 3 are diagrams for explaining a manufacturing procedure of a cold cathode display device according to an embodiment of the present invention. However, FIG. 2 is a figure for demonstrating the preparation procedure of the front glass substrate of a cold cathode display device, and FIG. 3 is a figure for demonstrating the preparation procedure of the back substrate of a cold cathode display device. In the following description, a procedure for manufacturing a cold cathode display device capable of full color display including phosphors for three colors of red (R), green (G), and blue (B) will be described. Moreover, x, y, z shown in FIG.2 and FIG.3 shows the x axis, y axis, and z axis which are mutually orthogonally crossed. Further, in FIGS. 2C to 2E, the phosphors 207 to 209 are described in the same manner as the first to third electrode layers 202 to 204 and the first and second insulating layers 205 and 206. The actual structure of the phosphors 207 to 209 is a structure in which a plurality of nanocrystals (microcrystals) are arranged.
[0028]
First, as shown in FIG. 2A, the first electrode layer 202, the first insulating layer 205, the second electrode serving as an anode on the upper surface side (opposite surface side, z-axis direction side) of the front glass substrate 201. The electrode layer 203, the second insulating layer 206, and the third electrode layer 204 are formed in this order. That is, three conductive electrode layers (first, second, and second) serving as anode layers for three colors of R, G, and B with the insulating layer (first and second insulating layers 205 and 206) interposed therebetween. 3 electrode layers 202-204). However, the thin film layers of the first to third electrode layers 202 to 204 and the first and second insulating layers 205 and 206 are formed by, for example, a well-known ITO (Indium Tin Oxide, tin on the upper surface side of the front glass substrate 201. The transparent first electrode layer 202 made of indium oxide (added indium oxide) or a composite oxide of indium and zinc called by the trade name of IDIXO is formed by a known vacuum deposition or sputtering method. Next, on the upper surface side of the first electrode layer 202, silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, titanium oxide, polyethylene, polyester, polyimide, polyphenylene sulfide, polyparaxylene, polyacrylonitrile, various insulating LB films, etc. The first insulating layer 205 is formed by a known CVD method, plasma CVD method, plasma polymerization method, vapor deposition method, spin coating method, dipping method, cluster ion beam vapor deposition method, LB method, or the like. Similarly, second and third electrode layers 203 and 204 and a second insulating layer 206 are formed.
[0029]
Next, as shown in FIG. 2B, for example, well-known electron beam lithography is repeated on the second and third electrode layers 203 and 204 and the first and second insulating layers 205 and 206 to form a film. The first to third electrode layers 202 to 204 for R, G, and B are three-dimensionally exposed in the thickness direction (z axis). That is, first, a groove (first groove) having a predetermined width is formed from the upper surface side of the third electrode layer 204 to the second electrode layer 203 through the third electrode layer 204 and the second insulating layer 206. To do. However, the extending direction of the first groove is formed to be the y-axis direction. In the present embodiment, the number of the first grooves is 3, but the number of first grooves is not limited to this, and may be set as appropriate according to the resolution when used as a display device.
[0030]
Next, a predetermined width is reached from the upper surface side of the second electrode layer 203 exposed in the first groove to the first electrode layer 202 through the second electrode layer 203 and the first insulating layer 205. A groove (second groove) is formed. At this time, in this embodiment, as is apparent from FIG. 2B, the width of the second groove (the length in the x-axis direction), which is the exposed width of the first electrode layer 202, and the second The first groove and the second groove are formed so that the exposed width of the electrode layer 203 is equal to the exposed width of the third electrode layer 204.
[0031]
Next, as shown in FIG. 2C to FIG. 2E, on the exposed surfaces of the first to third electrode layers 202 to 204, an II-VI group compound semiconductor for R, G, B is used. Nano-sized microcrystals of phosphors and rare earth oxide phosphors are deposited. For example, as shown in FIG. 2C, first, Ag is formed as a blue phosphor on the exposed portion of the first electrode layer 202 by a well-known CVD (Chemical Vapor Deposition) method, MBE (Molecular Beam Epitaxy) method, or the like. ZnS or ZnO to which Al, Zn, or the like is added is deposited on the exposed surface of the first electrode layer 202. At this time, in this embodiment mode, the blue phosphor 207 deposited on the first electrode layer 202 is deposited as nanocrystals (microcrystals) by adjusting the deposition conditions. Further, when deposition is performed in a normal state, the phosphor is also deposited on the second and third electrode layers 203 and 204. Therefore, in the present embodiment, the first to third electrodes are used. A bias voltage (not shown) is applied to each of the layers 202 to 204, and the deposition conditions are selected so that the phosphor is deposited only on the electrode surface of the first electrode layer 202.
[0032]
For example, in silicon (Si), silane gas (SiH ₄ When a very small amount of deposition is performed on a substrate by CVD using a material gas as a source gas, the deposited layer does not become a thin film having a uniform film thickness but forms nano-sized island-like particles. The size of the particles can be controlled to some extent by deposition conditions such as deposition temperature, source gas pressure, deposition time, and bias voltage applied to the electrode. If these nano-sized island-shaped particles are annealed in an oxygen atmosphere to form a silicon oxide layer (insulating layer) on the surface, these particles can function independently. Therefore, also in this embodiment, the deposition conditions are selected so that the phosphor is deposited only on the electrode surface of the first electrode layer 202 by a method according to this.
[0033]
Next, as shown in FIG. 2D, ZnS or ZnO in which Cu, Al, Zn, or the like, which becomes a green phosphor, is added to the exposed surface of the second electrode layer 203 by a CVD method, an MBE method, or the like. And so on. The green phosphor 208 deposited in this manner is deposited as nanocrystals (microcrystals) by adjusting the deposition conditions in the same manner as the blue phosphor 207 described above.
[0034]
As shown in FIG. 2E, ZnS, ZnO or the like to which Ag, Al, or the like, which becomes a red phosphor, is deposited as nanocrystals (microcrystals) is also deposited on the exposed surface of the third electrode layer 204. Let
[0035]
However, in the above description, the case where the phosphors 207 to 209 are sequentially deposited on the first to third electrode layers 202 to 204 has been described. Deposition on the exposed surfaces of the electrode layers 202 to 204, and thereafter selecting a desired electrode by grounding or applying a bias voltage, etc., and ion-implanting desired RGB impurity atoms only to the selected nanocrystals. Needless to say, the configuration may be adopted. As the RGB impurity atoms, when the nanocrystal serving as the mother crystal layer is, for example, ZnS, Ag, Al, etc. as red emission impurities, Cu, Al, Zn, etc. as green, Ag, Al as blue , Zn and other impurities. Needless to say, after this ion implantation, annealing for solid solution of each impurity at the lattice position and recovery of damage needs to be performed to activate as the emission center.
[0036]
Further, as will be described later, since the light emission of the phosphors 207 to 209 of each color of RGB is observed from the lower surface side (the back surface side of the phosphor surface), the first electrode layer 202, the first insulating layer 205, Needless to say, the second electrode layer 203, the second insulating layer 206, and the third electrode layer 204 are preferably made of a material that is transparent to RGB visible light.
[0037]
On the other hand, in the production of the rear substrate, first, as shown in FIG. 3A, a cathode layer 302 serving as a cathode is formed on the upper surface side (opposing surface side) of the rear substrate 301. The cathode layer 302 is formed, for example, like the above-mentioned anode, on the upper surface side of the back substrate 301, a transparent conductive electrode made of a well-known ITO or a composite oxide of indium and zinc called by the trade name of IDIXO. The layer (cathode layer 302) is formed by a known vacuum deposition or sputtering method. However, the cathode layer 302 is not limited to the complex oxide of indium and zinc called by the trade names of ITO and IDIXO, and may be other materials. However, the cathode layer 302 is a material through which an electron beam passes because it is necessary to transmit the photoelectrons 110 incident from the back side of the back substrate 301 to the nano-sized microcrystal (nano-photoelectron crystal layer) 303.
[0038]
Next, as shown in FIG. 3B, nano-sized microcrystals 303 made of a photoelectron emitting material are deposited on the upper surface side of the cathode layer 302. However, deposition of the nano-sized microcrystals 303 at this time can be performed by a method according to silicon as described above. Needless to say, the photoelectron emitting material is preferably a low work function material such as cesium, potassium, or iodine. However, the work function is smaller as the electronegativity is smaller, and tends to decrease with the size of the radius of a sphere having a volume per electron in the material. For example, small metals such as cesium (Cs), potassium (K), rubidium (Rb), barium (Ba), strontium (Sr), and metals such as platinum (Pt), gold (Au), palladium (Pd) It ’s big.
[0039]
The anode side panel 304, which is a panel on the front glass substrate 201 side produced by the above procedure, and the cathode side panel 305, which is a panel on the back substrate 301 side, are arranged so that the facing surfaces thereof face each other, For example, well-known spacers (not shown) are arranged on the outer peripheral portions of the anode side panel 304 and the cathode side panel 305 (the front glass substrate 201 and the back substrate 301). At this time, the region surrounded by the spacer, the front glass substrate 201 and the back substrate 301 is vacuum-sealed, so that the phosphors 207 to 209 formed on the facing surface of the front glass substrate 201 and the back substrate 301 face each other. The nano-sized microcrystals 303 formed on the surface are sealed in a vacuum.
[0040]
Thereafter, a known switch 311 having three inputs and one output is provided between the first to third electrode layers 202 to 204 arranged on the front glass substrate 201 and the power source 310, whereby the voltage from the power source 310 is changed to the first. The electrode layer 202 is applied between any one of the electrode layers 202 to 204 and the cathode layer 302. With such a configuration, as shown in FIG. 3C, the phosphor to which the electron beam by the emitted electrons 309 emitted in response to the ultraviolet beam 307 irradiated from the back side of the back substrate 301 reaches. By controlling the position, the light emission of a desired color is obtained. However, the control (scanning control) of the irradiation position of the ultraviolet beam 307 is performed by a rotation operation of a known mirror 308 that reflects the ultraviolet beam 307 irradiated from the known semiconductor laser 306.
[0041]
That is, in the display device of this embodiment mode, the ultraviolet beam 307 irradiated from the semiconductor laser 306 is scanned by the operation of the mirror 308, and between the first to third electrode layers and the cathode layer 302 via the switch 311. By controlling the voltage applied to the image signal, any one of the blue phosphor 207, the green phosphor 208, and the red phosphor 209 emits light by the emitted electrons 309 emitted from the nano-sized microcrystal 303 and is input. Accordingly, it is possible to perform light-emitting display such as characters and graphics or light-emitting display as a light-emitting element.
[0042]
FIG. 4 is a diagram for explaining a schematic configuration of a cold cathode display device according to an embodiment of the present invention. However, FIG. 4 shows the first to third electrode layers 202 to 204 on which the blue phosphor 207, the green phosphor 208, and the red phosphor 209 are formed for the sake of simplicity, by the same transparent electrode 405. Needless to say, the blue phosphor 207, the green phosphor 208, and the red phosphor 209 are formed on different electrode layers. Needless to say, the voltage from the power supply 310 is also selectively applied to each electrode layer via a switch 311 (not shown).
[0043]
As shown in FIG. 4, in the cold cathode display device of this embodiment, the ultraviolet beam 401 emitted from the semiconductor laser 306 is divided into two ultraviolet beams 403a and 403b by a semi-transmissive first mirror 402a. At this time, one ultraviolet beam 403a passes through the first mirror 402a and reaches the first scanning mirror 404a, and the irradiation position is scanned by rotating the first scanning mirror 404a vertically and horizontally. The Rukoto. The other ultraviolet beam 403b is divided into two ultraviolet beams 403c and 403d by a semi-transmissive second mirror 402b.
[0044]
Here, the ultraviolet beam 403c reflected by the second mirror 402b reaches the second scanning mirror 404b, and the irradiation position is scanned by rotating the second scanning mirror 404b vertically and horizontally. It becomes. On the other hand, the ultraviolet beam 403d transmitted through the second mirror 402b is incident on a semi-transmissive third mirror 402c, and is divided into two ultraviolet beams 403e and 403f by the third mirror 402c.
[0045]
The ultraviolet beam 403e reflected by the third mirror 402c reaches the third scanning mirror 404c, and the irradiation position is scanned by rotating the third scanning mirror 404c vertically and horizontally. On the other hand, the ultraviolet beam 403f that has passed through the third mirror 402c enters the fourth mirror 402d, and the fourth mirror 402d irradiates the ultraviolet beam 403f toward the fourth scanning mirror 404d. The irradiation position of the ultraviolet beam 403f incident on the fourth scanning mirror 404d is scanned by rotating the fourth scanning mirror 404d vertically and horizontally.
[0046]
Here, the ultraviolet beams 403 a, 403 c, 403 e, and 403 f whose irradiation positions are scanned by the first to fourth scanning mirrors 404 a to 404 d are converted into nano-sized microcrystals 303 through the back substrate 301 and the cathode layer 105. The emitted electrons 309 are emitted only from the nano-sized microcrystals 303 that reach and are irradiated with the respective ultraviolet beams 403a, 403c, 403e, and 403f. Here, the blue phosphor 207, the green phosphor 208, and the red phosphor 209 are formed on different electrode layers (not shown), and are synchronized with the operations of the first to fourth scanning mirrors 404a to 404d from the power source 310. Since the voltage applied to the electrode layer and the cathode layer 105 is controlled by switching a switch 311 (not shown), the emitted electrons 309 are accelerated according to the applied voltage, and the blue phosphor 207 and the green phosphor 208 and the red phosphor 209 are irradiated to obtain desired light emission. At this time, in this embodiment, since the blue phosphor 207, the green phosphor 208, and the red phosphor 209 also have a microcrystalline structure, the phosphors in the irradiation range of the electron beam in which the emitted electrons 309 are accelerated are included. Only microcrystals emit light. That is, in the present embodiment, high-resolution light emission corresponding to a high-definition electron beam is generated, so that high-resolution display is possible.
[0047]
In particular, in the present embodiment, the ultraviolet beam 401 emitted from the semiconductor laser 306 is divided into a plurality of ultraviolet beams 403a, 403c, 403e, and 403f, and each is independently made by the first to fourth scanning mirrors 404a to 404d. Since scanning is performed in parallel, so-called optical multi-beam parallel scanning, a large number of scanning lines can be scanned in real time by simultaneously scanning multiple scanning beams on one screen (screen division scanning). Can be displayed.
[0048]
In this embodiment, the ultraviolet beam 401 emitted from the semiconductor laser 306 is divided into four ultraviolet beams 403a, 403c, 403e, and 403f. However, the present invention is not limited to this. Needless to say, the above-described effects can be obtained by dividing the ultraviolet beam into parallel beams and scanning them in parallel with a dedicated scanning mirror.
[0049]
Further, as shown in FIG. 1 and FIG. 3C, it goes without saying that the ultraviolet beam emitted from the semiconductor laser 306 may be directly scanned by one mirror.
[0050]
The invention made by the present inventor has been specifically described based on the embodiment of the invention, but the invention is not limited to the embodiment of the invention and does not depart from the gist of the invention. Of course, various changes can be made.
[0051]
【The invention's effect】
The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows.
(1) Since the size of the display pixel can be the size of the microcrystal on the photocathode rather than the wavelength of the light beam for selecting dots (pixels), it is possible to perform ultrahigh-definition display necessary for stereoscopic display such as holography. This is much higher definition than the conventional display system.
[0052]
(2) Since dot (pixel) selection is performed by scanning a light beam by rotating a mirror, it is not necessary to form a cathode bus. As a result, steps required for manufacturing the display device can be reduced.
[0053]
(3) Since the ultraviolet beam is scanned by the mirror, even a large-capacity array (large area cold cathode display device) can be scanned at high speed.
[0054]
(4) Since electrons emitted from the photocathode are accelerated at a high voltage, light can be emitted with high brightness.
[Brief description of the drawings]
FIG. 1 is a diagram for explaining the basic principle of high-definition display according to the present invention.
FIG. 2 is a diagram for explaining a manufacturing procedure of a cold cathode display device according to an embodiment of the present invention.
FIG. 3 is a diagram for explaining a manufacturing procedure of a cold cathode display device according to an embodiment of the present invention.
FIG. 4 is a diagram for explaining a schematic configuration of a cold cathode display device according to an embodiment of the present invention.
[Explanation of symbols]
101 ... Front glass substrate 102 ... Transparent anode layer
103 ... phosphor nanocrystal layer 104 ... back substrate
105 ... Cathode layer 106 ... Photoelectron emission layer
107 ... Laser device 108 ... Mirror
109 ... light beam 110 ... photoelectron
111 ... Visible light 112 ... Power supply
113 ... Threshold intensity 114 ... Light beam intensity distribution
115 ... Nanocrystal for photocathode
201 ... Front glass substrate 202 ... First electrode layer
203 ... Second electrode layer 204 ... Third electrode layer
205 ... 1st insulating layer 206 ... 2nd insulating layer
207 ... Blue phosphor 208 ... Green phosphor
209 ... Red phosphor
301 ... Back substrate 302 ... Cathode layer
303 ... Nano-sized microcrystal 304 ... Anode side panel
305 ... Cathode side panel 306 ... Semiconductor laser
307 ... UV beam 308 ... Mirror
309 ... Emission electron 310 ... Power supply
311 ... Switch
401 ... UV beam
402a to 402d: first to fourth mirrors
403a to 403f ... UV beam
404a to 404d: first to fourth scanning mirrors
405 ... Transparent electrode

Claims (11)

An anode-side panel having a phosphor layer formed of a phosphor layer emitting red, green, and blue light respectively formed on the red, green, and blue electrode layers laminated with an insulating film interposed therebetween ; and the anode A cathode-side panel disposed opposite to the side panel and formed with a thin film layer having a photoelectron emission effect of emitting an electron beam by irradiation of the light beam; means for irradiating the cathode-side panel with the light beam; Means for controlling the irradiation position, and means for applying an electric field between the anode side panel and the cathode side panel, and the electron beam emitted by the irradiation of the light beam is accelerated by the electric field to accelerate the fluorescence. A cold cathode display device that emits light by irradiating a body layer. 2. The cold cathode display device according to claim 1 , wherein an electric field applied to the electrode layer on which the red, green, and blue light emitting layers are formed and the cathode side panel is appropriately controlled, and the electron beam is desired. A cold cathode display device, characterized by being guided to a phosphor layer of the above. 3. The cold cathode display device according to claim 1, wherein the thin film layer that emits an electron beam by irradiation with the light beam is made of nano-sized microcrystals. 4. The cold cathode display device according to claim 3 , wherein the thin film layer that emits an electron beam upon irradiation with the light beam is made of a low work function material such as cesium, potassium, or iodine. . In the cold cathode display device according to any one of claims 1 to 4, the phosphor layer is composed of fine crystals of nanometer size II-VI compound semiconductor phosphor or a rare earth oxide phosphor A feature of a cold cathode display device. In the cold cathode display device according to any one of claims 1 to 5, generation means of said light beam, a cold cathode display device characterized by an ultraviolet laser diode or light emitting diode. 7. The cold cathode display device according to claim 6 , wherein the irradiation position of the light beam is made by an operation of a reflecting means disposed between the cathode side panel and the light beam generating means. Cold cathode display device. 8. The cold cathode display device according to claim 7 , comprising: means for dividing the light beam into two or more; and two or more reflecting means for independently controlling the irradiation positions of the divided light beams. A feature of a cold cathode display device. An anode portion on which a phosphor layer is formed and a cathode side panel on which a thin film layer having a photoelectron emission effect is formed. The anode side panel and the cathode side panel are arranged to face each other and emit from the cathode side panel. In a method of manufacturing a cold cathode display device that emits light from the phosphor layer by an electron beam, a step of forming a cathode layer on the cold cathode side panel, and a very small amount of deposition by CVD on the surface of the cathode layer And a step of forming a thin film layer having a photoelectron emission effect of nano-sized microcrystals.   An anode portion on which a phosphor layer is formed and a cathode side panel on which a thin film layer having a photoelectron emission effect is formed. The anode side panel and the cathode side panel are arranged to face each other and emit from the cathode side panel. In the method of manufacturing a cold cathode display device in which the phosphor layer emits light by an electron beam, a step of forming a first electrode layer on the anode side panel, and a first surface on the surface of the first electrode layer Forming a second insulating layer, forming a second electrode layer on the surface of the first insulating layer, forming a second insulating layer on the surface of the second electrode layer, Forming a third electrode layer on the surface of the second insulating layer; forming each of the grooves reaching the first electrode layer and the second electrode layer from the third electrode layer; Red, green or blue on the surface of the first to third electrode layers The method for manufacturing a cold cathode display device characterized by comprising a step of forming a phosphor layer which emits light or Re. 11. The method for manufacturing a cold cathode display device according to claim 10 , wherein a very small amount of deposition is performed on the surfaces of the first to third electrode layers by CVD to form a phosphor layer made of nano-sized microcrystals. A method for manufacturing a cold cathode display device.

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