JP3589531B2 - Thin-film photoelectric conversion device - Google Patents

Thin-film photoelectric conversion device Download PDF

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JP3589531B2
JP3589531B2 JP22998296A JP22998296A JP3589531B2 JP 3589531 B2 JP3589531 B2 JP 3589531B2 JP 22998296 A JP22998296 A JP 22998296A JP 22998296 A JP22998296 A JP 22998296A JP 3589531 B2 JP3589531 B2 JP 3589531B2
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photoelectric conversion
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JPH1074964A (en
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英雄 山岸
善久 太和田
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Kaneka Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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Description

【０００１】
【発明の属する技術分野】
本発明は薄膜光電変換装置に関し、特に、基板上に形成された半導体光電変換層が複数の分割線によって複数の光電変換セルに分割されていて、それらの複数のセルが電気的に直列に接続された集積型薄膜光電変換装置に関するものである。
【０００２】
【従来の技術】
図６において、公知の集積型薄膜光電変換装置の一例が概略的な断面図で図解されている。このような光電変換装置の１つのモジュール１０の作製においては、まず透明ガラス基板１上にＩＴＯ（インジウムスズ酸化物）のようなＴＣＯ（透明導電性酸化物）層２が堆積される。ＴＣＯ層２は、たとえば約１ｃｍの間隔で平行に配置された複数の分割線Ｄ１によって、互いに平行な複数の帯状の部分領域に分割される。レーザ加工によれば、たとえば５０〜１００μｍの細い幅の分割線溝Ｄ１を形成することが可能である。
【０００３】
分割されたＴＣＯ層２は、半導体光電変換層３によって覆われる。光電変換層３は、たとえば順次積層されたｐ層，ｉ層，およびｎ層（図示せず）を含むことができ、また、これらの部分的半導体層の少なくとも１つがアモルファスシリコン系の半導体で形成され得る。このような光電変換層３も、ＴＣＯ層２の分割線Ｄ１と同様に形成される複数の第２の分割線Ｄ２によって、互いに平行な複数の帯状の部分領域に分割される。すなわち、レーザ加工によって、第２の分割線Ｄ２は第１の分割線Ｄ１に対して約１００μｍだけ隔てられた平行な溝として形成され得る。
【０００４】
分割された半導体光電変換層３は、Ａｇ，Ａｌ等の金属層４によって覆われる。このとき、金属層４は、分割線溝Ｄ２に沿ってＴＣＯ層２と接続される。金属層４も、第２の分割線Ｄ２に近接して平行に形成される複数の第３の分割線溝Ｄ３によって分割される。
【０００５】
以上のようにして、１つの基板１上に複数の細長い帯状の光電変換セルが形成され、１つのセルの背面金属電極４は、第２の分割線溝Ｄ２に沿って、隣接するセルの前面ＴＣＯ電極２に接続されている。すなわち、図６の例では、４つの帯状のセルが電気的に互いに直列に接続されている。
【０００６】
図７は、図６の集積型薄膜光電変換装置を光入射側であるガラス基板側から見た平面図を示している。図６と図７においては図面の明瞭化のために４つの光電変換セルのみが示されているが、実際には、たとえば分割線Ｄ１に沿った長さ方向に約９０ｃｍでかつそれと直交する幅方向に約４５ｃｍの大きさを有する集積型薄膜光電変換装置の１つのモジュール１０が形成され得る。このように大きな面積を有する薄膜光電変換モジュール１０は、家屋の屋根上に配置される太陽電池として好ましく利用することができる。
【０００７】
なお、各光電変換セルは分割線の方向に沿っては長く（たとえば９０ｃｍに）形成され得るが、分割線と直交する幅方向には短く（たとえば約１ｃｍに）形成される。これは、ＴＣＯからなる前面電極２の長さ方向に沿っては、隣接するセルの背面金属電極４が第２の分割線溝Ｄ２を介して接続されているのでＴＣＯ電極２の比較的大きなシート抵抗が問題とならないが、分割線溝Ｄ２から離れる方向にＴＣＯ電極２の幅が大きくなれば、その大きなシート抵抗が影響して各セルの光電変換特性が著しく劣化するからである。
【０００８】
図８は、切妻造りの屋根の南側の面に光電変換モジュールを配置した例を示す概略的な斜視図である。この図から明らかなように、切妻造りの屋根の一面は全体として矩形の形状を有するので、その屋根面は従来の矩形状の光電変換モジュール１０を複数枚用いることによって隙間なく覆うことができる。なお、図８においては図面の明瞭化のために８枚の光電変換モジュール１０のみが示されているが、実際にはさらに多くのモジュール１０が配置されることは言うまでもない。
【０００９】
【発明が解決しようとする課題】
図９においては、寄棟造りの屋根の一例が概略的な斜視図で示されている。すなわち、寄棟造りの屋根の一面は台形状または三角形状を有している。図９から明らかなように、寄棟造りの屋根のたとえば台形状の屋根面は、複数枚の矩形状光電変換モジュール１０のみを用いて隙間なく覆うことができない。すなわち、台形状または三角形状の屋根面を隙間なく光電変換モジュールで覆うためには、少なくとも三角形状の光電変換モジュール１０Ａまたは台形状のモジュールを必要とする。
【００１０】
図１０は、三角形状の光電変換モジュールの一例を概略的な平面図で示している。図１０の例では、三角形のモジュールが、複数の等間隔に配置された互いに平行な分割線Ｄによって６つの光電変換セル領域１０ａ〜１０ｆに分割されており、これらのセルは互いに電気的に直列に接続されている。すなわち、各光電変換セル１０ａ〜１０ｆは、それぞれ互いに異なる面積を有している。このような図１０の光電変換モジュールにおいては、各光電変換セルの生じる電流量がそのセルの面積に比例するので、モジュール全体から得られる電流量は最も小さい面積を有するセル１０ａによって制限されてしまうという課題がある。
【００１１】
図１１は、三角形状の光電変換モジュールのもう１つの例を概略的な平面図で示している。図１１の例では、複数の分割線Ｄは互いに平行に設けられているが、それらの間隔は順次変えられている。すなわち、分割線Ｄによって分割された６つの光電変換セル１１ａ〜１１ｆの各々は、いずれも同じ面積を有している。この場合、各光電変換セルの面積が同一であるという観点からは光電変換セル１１ａ〜１１ｆの各々が同一の電流を生じ得ると期待されるが、セル１１ａや１１ｂにおいては分割線Ｄに直交する方向におけるＴＣＯ電極の幅が大きくなっているので、そのＴＣＯ電極のシート抵抗により光電変換特性の劣化を生じるという課題がある。
【００１２】
図１２は、三角形状の光電変換モジュールのさらに他の例を概略的な平面図で示している。図１２の例では、図１０の場合と同様に複数の分割線Ｄが等間隔で互いに平行に配置されている。しかし、図１２の例においては、図１０の場合における欠点を解消すべく、２つずつのセルが電気的に互いに並列に接続されている。すなわち、セル１２ａ〜１２ｃは、それぞれセル１２ｄ〜１２ｆと並列に接続されている。この結果、組合わされたセルペア（１２ａ＋１２ｆ），（１２ｂ＋１２ｅ），および（１２ｃ＋１２ｄ）のそれぞれは互いに等しい面積を有し、しかも、分割線ＤからのＴＣＯ電極の幅が特定のセルにおいて大きくなるという問題をも生じない。しかしながら、図１２の三角形状のモジュールにおいてはその図からもわかるように複雑な配線を必要とし、集積型モジュール内にこのような複雑な配線を組み入れることは困難であるという課題がある。
【００１３】
以上のような課題に鑑み、本発明は、任意の多角形状を有する光電変換モジュールにおいて、分割された複数の光電変換セルの各々が同一面積を有しかつ特定のセルにおいて分割線からのＴＣＯ電極の幅が広くなることのない多角形状の光電変換モジュールを提供することを目的としている。
【００１４】
【課題を解決するための手段】
本発明による薄膜光電変換装置は、基板上に形成された半導体光電変換層が複数の分割線によって複数の光電変換セルに分割されていてそれらの複数のセルが電気的に直列に接続されており、その半導体光電変換層の全体の形状は少なくとも１つの実質的に三角形の部分を含む実質的に多角形の形状を有し、複数の分割線は半導体光電変換層の全体形状に含まれる三角形の一辺を等間隔に分割した点とその一辺に対面する頂点とを結ぶ線分を含むことを特徴としている。
【００１５】
【発明の実施の形態】
図１は、本発明の１つの実施の形態による三角形状の光電変換モジュールを概略的な平面図で図解している。この光電変換モジュールは直角三角形の形状を有し、辺１Ａ−１Ｃと辺１Ｂ−１Ｃは互いに直交している。この三角形状モジュールは、１つの頂点１Ｂから放射状に設けられた複数の分割線Ｄによって６つの光電変換セル１ａ〜１ｆに分割されている。これらの分割線Ｄは、辺１Ａ−１Ｃを６つに等分割する点で終端している。すなわち、６つの光電変換セル１ａ〜１ｆのそれぞれは互いに異なる細長い三角形状を有しているが、互いに等しい長さの底辺と共通の高さを有しているので互いに等しい面積を有していることがわかる。さらに、辺１Ａ−１Ｃが６等分されているので、複数のセル１ａ〜１ｆのうちの特定のセル内において分割線ＤからのＴＣＯ電極の幅が大きくなるという問題を生じることもない。すなわち、複数の光電変換セル１ａ〜１ｆの各々は等しい電流量を生じることができかつＴＣＯ電極の幅が大きくなることによる悪影響を受けることもない。
【００１６】
なお、本明細書において言及されている三角形状の光電変換モジュールとは物理的に厳密な三角形を意味するものではなく、実質的に三角形状であればよいことを意味する。たとえば、図２に示されているようなもう１つの実施の形態におけるように、三角形の頂点である２Ａや２Ｂが丸められたものであってもよいことは言うまでもない。
【００１７】
図３は、本発明のさらに他の実施の形態による光電変換モジュールを概略的な平面図で示している。図１の実施の形態においては光電変換モジュールが直角三角形の形状を有していたが、本発明はそのような直角三角形に限定されるものではなく、図３に示されているような任意の三角形の光電変換モジュールにも適用し得ることが容易に理解されよう。すなわち、三角形の任意の一辺３Ａ−３Ｃを等分割する点とその一辺に対面するもう１つの頂点３Ｂとを結ぶ分割線Ｄを設けることによって、図１の場合と同様な効果を生じ得る任意の三角形状の光電変換モジュールを形成し得ることが理解されよう。
【００１８】
図４は、本発明のさらに他の実施の形態による光電変換モジュールを概略的な平面図で図解している。この光電変換モジュールは、任意の四角形状４Ａ−４Ｂ−４Ｃ−４Ｄを有している。このような任意の四辺形の光電変換モジュールは、任意の１つの対角線４Ａ−４Ｃを介して２つの三角形４Ａ−４Ｂ−４Ｃおよび４Ａ−４Ｃ−４Ｄが合体しているものと考えることができる。そして、その対角線４Ａ−４Ｃを等分割する点と他の頂点４Ｂおよび４Ｃとを結ぶ線分によって形成される分割線Ｄを設けることによって、分割された各セル領域が同一の面積を有しかつ特定のセル内において分割線ＤからのＴＣＯ電極の幅が大きくなるという問題を生じることもない。
【００１９】
図５は、本発明のさらに他の実施の形態による光電変換モジュールを概略的な平面図で図解している。この光電変換モジュールは全体として台形５Ａ−５Ｂ−５Ｄ−５Ｅの形状を有しているが、この台形は三角形５Ａ−５Ｂ−５Ｃおよび平行四辺形５Ａ−５Ｃ−５Ｄ−５Ｅとが辺５Ａ−５Ｃを共有して合体したものであると考えることができる。そこで、分割線Ｄは、辺５Ａ−５Ｃを等分する点と頂点５Ｂを結ぶ線分、およびその辺５Ａ−５Ｃを等分する点を通りかつ辺５Ａ−５Ｅに平行な線分によって形成することができる。これによって、図５において分割された各光電変換セルのそれぞれが互いに等しい面積を有しかつ特定のセル内において分割線ＤからのＴＣＯ電極の幅が大きくなるという問題を生じることもない。また、図５における平行四辺形５Ａ−５Ｃ−５Ｄ−５Ｅが矩形であってもよいことは容易に理解されよう。さらに、図５において線分５Ｂ−５Ｃと５Ｃ−５Ｄが必ずしも直線である必要はなく、ある角度をなす場合にも本発明が適用し得ることが容易に理解されよう。
【００２０】
【発明の効果】
以上のように、本発明によれば、基板上に形成された半導体光電変換層が複数の分割線によって複数の光電変換セルに分割されていてそれらの複数のセルが電気的に直列接続された薄膜光電変換装置において、その半導体光電変換層が全体として任意の多角形状を有する場合であっても、各々の光電変換セルが等しい電流量を生じることができかつ特定のセル内において分割線からのＴＣＯ電極の幅が大きくなることによる悪影響の生じることのない薄膜光電変換装置を提供することができる。すなわち、本発明によれば、任意の多角形状を有する集積型薄膜光電変換装置であっても、従来の矩形の集積型薄膜光電変換装置と同等の光電変換性能を発揮させることができる。
【図面の簡単な説明】
【図１】本発明の１つの実施の形態による集積型薄膜光電変換装置を概略的に示す平面図である。
【図２】本発明のもう１つの実施の形態による集積型薄膜光電変換装置を示す概略的な平面図である。
【図３】本発明のさらに他の実施の形態による集積型薄膜光電変換装置を示す概略的な平面図である。
【図４】本発明のさらに他の実施の形態による集積型薄膜光電変換装置を示す概略的な平面図である。
【図５】本発明のさらに他の実施の形態による集積型薄膜光電変換装置を示す概略的な平面図である。
【図６】従来の集積型薄膜光電変換装置の一例を示す概略的な断面図である。
【図７】図６の光電変換装置をガラス基板側から見た概略的な平面図である。
【図８】切妻造りの屋根上に配置された光電変換モジュールを示す概略的な斜視図である。
【図９】寄棟造りの屋根上に配置された光電変換モジュールを示す概略的な斜視図である。
【図１０】三角形状の集積型光電変換モジュールにおける可能な分割線の配置の一例を示す概略的な平面図である。
【図１１】三角形状の光電変換モジュールにおける可能な分割線の配置のもう１つの例を示す概略的な平面図である。
【図１２】三角形状の光電変換モジュールにおける可能な分割線の配置のさらに他の例を示す概略的な平面図である。
【符号の説明】
１ 透明ガラス基板
２ 前面ＴＣＯ電極
３ 半導体光電変換層
４ 背面金属電極
Ｄ１，Ｄ２，Ｄ３，Ｄ 分割線
１０，１０Ａ 集積型薄膜光電変換モジュール
１ａ〜１ｆ，１０ａ〜１０ｆ，１１ａ〜１１ｆ，１２ａ〜１２ｆ 光電変換セル
１Ａ〜１Ｃ，２Ａ〜２Ｃ，３Ａ〜３Ｃ，４Ａ〜４Ｄ，５Ａ〜５Ｅ 多角形の頂点[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a thin-film photoelectric conversion device, in particular, a semiconductor photoelectric conversion layer formed on a substrate is divided into a plurality of photoelectric conversion cells by a plurality of dividing lines, and the plurality of cells are electrically connected in series. And an integrated thin-film photoelectric conversion device.
[0002]
[Prior art]
In FIG. 6, an example of a known integrated thin-film photoelectric conversion device is illustrated in a schematic cross-sectional view. In manufacturing one module 10 of such a photoelectric conversion device, first, a TCO (transparent conductive oxide) layer 2 such as ITO (indium tin oxide) is deposited on a transparent glass substrate 1. The TCO layer 2 is divided into a plurality of band-shaped partial regions parallel to each other by a plurality of division lines D1 arranged in parallel at intervals of about 1 cm, for example. According to the laser processing, it is possible to form the dividing line groove D1 having a small width of, for example, 50 to 100 μm.
[0003]
The divided TCO layer 2 is covered with the semiconductor photoelectric conversion layer 3. The photoelectric conversion layer 3 can include, for example, a p-layer, an i-layer, and an n-layer (not shown) that are sequentially stacked, and at least one of these partial semiconductor layers is formed of an amorphous silicon-based semiconductor. Can be done. Such a photoelectric conversion layer 3 is also divided into a plurality of band-shaped partial regions parallel to each other by a plurality of second division lines D2 formed similarly to the division line D1 of the TCO layer 2. That is, the second division line D2 can be formed as a parallel groove separated by about 100 μm from the first division line D1 by laser processing.
[0004]
The divided semiconductor photoelectric conversion layer 3 is covered with a metal layer 4 of Ag, Al, or the like. At this time, the metal layer 4 is connected to the TCO layer 2 along the dividing line groove D2. The metal layer 4 is also divided by a plurality of third dividing line grooves D3 formed in parallel with and adjacent to the second dividing line D2.
[0005]
As described above, a plurality of elongated strip-shaped photoelectric conversion cells are formed on one substrate 1, and the back metal electrode 4 of one cell is placed along the second dividing line groove D2 on the front surface of the adjacent cell. It is connected to the TCO electrode 2. That is, in the example of FIG. 6, four strip-shaped cells are electrically connected to each other in series.
[0006]
FIG. 7 is a plan view of the integrated thin-film photoelectric conversion device of FIG. 6 as viewed from the glass substrate side, which is the light incident side. Although only four photoelectric conversion cells are shown in FIGS. 6 and 7 for the sake of clarity, in actuality, for example, a width of about 90 cm in the length direction along the division line D1 and a width orthogonal thereto. One module 10 of the integrated thin-film photoelectric conversion device having a size of about 45 cm in the direction can be formed. The thin-film photoelectric conversion module 10 having such a large area can be preferably used as a solar cell arranged on the roof of a house.
[0007]
Each photoelectric conversion cell can be formed long (for example, 90 cm) along the direction of the division line, but short (for example, about 1 cm) in the width direction orthogonal to the division line. This is because, along the longitudinal direction of the front electrode 2 made of TCO, the back metal electrode 4 of the adjacent cell is connected via the second dividing line groove D2, so that the relatively large sheet of the TCO electrode 2 is formed. This is because the resistance does not matter, but if the width of the TCO electrode 2 increases in the direction away from the dividing line groove D2, the large sheet resistance influences and the photoelectric conversion characteristics of each cell are significantly deteriorated.
[0008]
FIG. 8 is a schematic perspective view showing an example in which a photoelectric conversion module is arranged on the southern surface of a gabled roof. As is clear from this figure, since one surface of the gable roof has a rectangular shape as a whole, the roof surface can be covered without gaps by using a plurality of conventional rectangular photoelectric conversion modules 10. Although FIG. 8 shows only eight photoelectric conversion modules 10 for clarity of the drawing, it goes without saying that more modules 10 are actually arranged.
[0009]
[Problems to be solved by the invention]
FIG. 9 is a schematic perspective view showing an example of a roof made of a ridge. That is, one side of the roof made of a ridge has a trapezoidal shape or a triangular shape. As is clear from FIG. 9, for example, a trapezoidal roof surface of a roof made of a ridge cannot be covered without a gap using only a plurality of rectangular photoelectric conversion modules 10. That is, in order to cover the trapezoidal or triangular roof surface with the photoelectric conversion module without any gap, at least the triangular photoelectric conversion module 10A or the trapezoidal module is required.
[0010]
FIG. 10 is a schematic plan view showing an example of a triangular photoelectric conversion module. In the example of FIG. 10, a triangular module is divided into six photoelectric conversion cell regions 10a to 10f by a plurality of parallel division lines D arranged at equal intervals, and these cells are electrically connected to each other in series. It is connected to the. That is, each of the photoelectric conversion cells 10a to 10f has a different area from each other. In the photoelectric conversion module shown in FIG. 10, since the amount of current generated by each photoelectric conversion cell is proportional to the area of the cell, the amount of current obtained from the entire module is limited by the cell 10a having the smallest area. There is a problem that.
[0011]
FIG. 11 is a schematic plan view showing another example of the triangular photoelectric conversion module. In the example of FIG. 11, the plurality of division lines D are provided in parallel with each other, but their intervals are sequentially changed. That is, each of the six photoelectric conversion cells 11a to 11f divided by the division line D has the same area. In this case, from the viewpoint that the area of each photoelectric conversion cell is the same, each of the photoelectric conversion cells 11a to 11f is expected to be able to generate the same current, but is orthogonal to the dividing line D in the cells 11a and 11b. Since the width of the TCO electrode in the direction is large, there is a problem that the sheet resistance of the TCO electrode causes deterioration of the photoelectric conversion characteristics.
[0012]
FIG. 12 is a schematic plan view showing still another example of the triangular photoelectric conversion module. In the example of FIG. 12, a plurality of division lines D are arranged at equal intervals in parallel with each other as in the case of FIG. However, in the example of FIG. 12, two cells are electrically connected in parallel with each other in order to eliminate the disadvantage in the case of FIG. That is, the cells 12a to 12c are connected in parallel with the cells 12d to 12f, respectively. As a result, each of the combined cell pairs (12a + 12f), (12b + 12e), and (12c + 12d) has the same area as each other, and the width of the TCO electrode from the dividing line D becomes large in a specific cell. Does not occur. However, the triangular module shown in FIG. 12 requires complicated wiring as can be seen from the drawing, and there is a problem that it is difficult to incorporate such complicated wiring in the integrated module.
[0013]
In view of the above problems, the present invention relates to a photoelectric conversion module having an arbitrary polygonal shape, wherein each of a plurality of divided photoelectric conversion cells has the same area and a TCO electrode from a division line in a specific cell. It is an object of the present invention to provide a polygonal photoelectric conversion module in which the width of the photoelectric conversion module does not increase.
[0014]
[Means for Solving the Problems]
In the thin film photoelectric conversion device according to the present invention, the semiconductor photoelectric conversion layer formed on the substrate is divided into a plurality of photoelectric conversion cells by a plurality of dividing lines, and the plurality of cells are electrically connected in series. Wherein the overall shape of the semiconductor photoelectric conversion layer has a substantially polygonal shape including at least one substantially triangular portion, and the plurality of dividing lines have a triangular shape included in the overall shape of the semiconductor photoelectric conversion layer. It is characterized in that it includes a line segment connecting a point obtained by dividing one side at equal intervals and a vertex facing the one side.
[0015]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1 illustrates a triangular photoelectric conversion module according to an embodiment of the present invention in a schematic plan view. This photoelectric conversion module has the shape of a right triangle, and sides 1A-1C and sides 1B-1C are orthogonal to each other. The triangular module is divided into six photoelectric conversion cells 1a to 1f by a plurality of division lines D provided radially from one vertex 1B. These dividing lines D terminate at points where the sides 1A-1C are equally divided into six. That is, each of the six photoelectric conversion cells 1a to 1f has a different slender triangular shape, but has the same length and a common height, and thus has the same area. You can see that. Further, since the sides 1A-1C are equally divided into six, there is no problem that the width of the TCO electrode from the dividing line D becomes large in a specific cell among the plurality of cells 1a to 1f. That is, each of the plurality of photoelectric conversion cells 1a to 1f can generate an equal amount of current, and is not adversely affected by an increase in the width of the TCO electrode.
[0016]
Note that the triangular-shaped photoelectric conversion module referred to in this specification does not mean a physically strict triangle, but means that a triangular shape is sufficient. For example, it is needless to say that the vertices 2A and 2B of the triangle may be rounded as in another embodiment as shown in FIG.
[0017]
FIG. 3 is a schematic plan view showing a photoelectric conversion module according to still another embodiment of the present invention. Although the photoelectric conversion module has the shape of a right triangle in the embodiment of FIG. 1, the present invention is not limited to such a right triangle, and may be any arbitrary shape as shown in FIG. 3. It will be easily understood that the present invention can be applied to a triangular photoelectric conversion module. That is, by providing a dividing line D connecting a point equally dividing any one side 3A-3C of the triangle and another vertex 3B facing the one side, an arbitrary effect that can produce the same effect as that of FIG. 1 can be obtained. It will be understood that a triangular-shaped photoelectric conversion module can be formed.
[0018]
FIG. 4 illustrates a photoelectric conversion module according to still another embodiment of the present invention in a schematic plan view. This photoelectric conversion module has an arbitrary square shape 4A-4B-4C-4D. Such an arbitrary quadrilateral photoelectric conversion module can be considered as a combination of two triangles 4A-4B-4C and 4A-4C-4D via an arbitrary one diagonal line 4A-4C. By providing a dividing line D formed by a line segment connecting the diagonal lines 4A-4C and the other vertices 4B and 4C, each divided cell region has the same area and There is no problem that the width of the TCO electrode from the dividing line D in a specific cell becomes large.
[0019]
FIG. 5 illustrates a photoelectric conversion module according to still another embodiment of the present invention in a schematic plan view. This photoelectric conversion module has the shape of a trapezoid 5A-5B-5D-5E as a whole, and this trapezoid has a triangle 5A-5B-5C and a parallelogram 5A-5C-5D-5E and a side 5A-5C. Can be considered to be a united one. Therefore, the dividing line D is formed by a line connecting the point equally dividing the sides 5A-5C and the vertex 5B, and a line passing through the point equally dividing the sides 5A-5C and parallel to the sides 5A-5E. be able to. Thereby, there is no problem that each of the photoelectric conversion cells divided in FIG. 5 has the same area as each other, and the width of the TCO electrode from the division line D in a specific cell becomes large. It will be readily understood that the parallelograms 5A-5C-5D-5E in FIG. 5 may be rectangular. Further, it will be easily understood that in FIG. 5, the line segments 5B-5C and 5C-5D do not necessarily have to be straight lines, and the present invention can be applied to a case where the angles are at a certain angle.
[0020]
【The invention's effect】
As described above, according to the present invention, a semiconductor photoelectric conversion layer formed on a substrate is divided into a plurality of photoelectric conversion cells by a plurality of division lines, and the plurality of cells are electrically connected in series. In a thin-film photoelectric conversion device, even when the semiconductor photoelectric conversion layer has an arbitrary polygonal shape as a whole, each photoelectric conversion cell can generate an equal amount of current, and a specific cell can generate a current from a dividing line. It is possible to provide a thin-film photoelectric conversion device that does not cause adverse effects due to an increase in the width of the TCO electrode. That is, according to the present invention, even an integrated thin film photoelectric conversion device having an arbitrary polygonal shape can exhibit the same photoelectric conversion performance as that of a conventional rectangular integrated thin film photoelectric conversion device.
[Brief description of the drawings]
FIG. 1 is a plan view schematically showing an integrated thin-film photoelectric conversion device according to one embodiment of the present invention.
FIG. 2 is a schematic plan view showing an integrated thin-film photoelectric conversion device according to another embodiment of the present invention.
FIG. 3 is a schematic plan view showing an integrated thin-film photoelectric conversion device according to still another embodiment of the present invention.
FIG. 4 is a schematic plan view showing an integrated thin-film photoelectric conversion device according to still another embodiment of the present invention.
FIG. 5 is a schematic plan view showing an integrated thin-film photoelectric conversion device according to still another embodiment of the present invention.
FIG. 6 is a schematic sectional view showing an example of a conventional integrated thin film photoelectric conversion device.
FIG. 7 is a schematic plan view of the photoelectric conversion device of FIG. 6 viewed from a glass substrate side.
FIG. 8 is a schematic perspective view showing a photoelectric conversion module arranged on a gable roof.
FIG. 9 is a schematic perspective view showing a photoelectric conversion module arranged on a roof made of buildings;
FIG. 10 is a schematic plan view showing an example of an arrangement of possible dividing lines in a triangular integrated photoelectric conversion module.
FIG. 11 is a schematic plan view showing another example of an arrangement of possible dividing lines in a triangular photoelectric conversion module.
FIG. 12 is a schematic plan view showing still another example of an arrangement of possible dividing lines in a triangular photoelectric conversion module.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Transparent glass substrate 2 Front TCO electrode 3 Semiconductor photoelectric conversion layer 4 Back metal electrode D1, D2, D3, D Dividing line 10, 10A Integrated thin film photoelectric conversion module 1a-1f, 10a-10f, 11a-11f, 12a-12f Photoelectric conversion cells 1A to 1C, 2A to 2C, 3A to 3C, 4A to 4D, 5A to 5E Vertices of polygon

Claims (4)

基板上に形成された半導体光電変換層が複数の分割線によって複数の光電変換セルに分割されていてかつそれらの複数のセルが電気的に直列に接続された薄膜光電変換装置において、前記半導体光電変換層の全体の形状が少なくとも１つの実質的に三角形の部分を含む実質的に多角形の形状を有し、前記複数の分割線は前記三角形の一辺を等間隔に分割した点とその一辺に対面する頂点とを結ぶ線分を含むことを特徴とする薄膜光電変換装置。In a thin-film photoelectric conversion device in which a semiconductor photoelectric conversion layer formed on a substrate is divided into a plurality of photoelectric conversion cells by a plurality of dividing lines and the plurality of cells are electrically connected in series, The entire shape of the conversion layer has a substantially polygonal shape including at least one substantially triangular portion, and the plurality of dividing lines are formed by dividing one side of the triangle at equal intervals and the one side thereof. A thin-film photoelectric conversion device including a line segment connecting a facing vertex. 前記半導体光電変換層は直角三角形状を有し、前記一辺は前記直角三角形の直交する２辺のうちのいずれか一方であることを特徴とする請求項１に記載の薄膜光電変換装置。2. The thin-film photoelectric conversion device according to claim 1, wherein the semiconductor photoelectric conversion layer has a right triangle shape, and the one side is one of two orthogonal sides of the right triangle. 3. 前記半導体光電変換層は前記三角形部分の前記一辺を共有する平行四辺形部分をさらに含み、その平行四辺形部分は前記共有辺を前記等間隔に分割した点を通る複数の分割線によって同一幅を有する複数の平行な帯状のセル部分に分割されていることを特徴とする請求項１または２に記載の薄膜光電変換装置。The semiconductor photoelectric conversion layer further includes a parallelogram portion sharing the one side of the triangular portion, and the parallelogram portion has the same width by a plurality of division lines passing through points at which the common side is divided at equal intervals. 3. The thin-film photoelectric conversion device according to claim 1, wherein the thin-film photoelectric conversion device is divided into a plurality of parallel strip-shaped cell portions. 前記半導体光電変換層に含まれる少なくとも一部の部分的層がアモルファスシリコン系半導体からなることを特徴とする請求項１から３のいずれかの項に記載の薄膜光電変換装置。The thin-film photoelectric conversion device according to any one of claims 1 to 3, wherein at least a partial layer included in the semiconductor photoelectric conversion layer is made of an amorphous silicon-based semiconductor.
JP22998296A 1996-08-30 1996-08-30 Thin-film photoelectric conversion device Expired - Fee Related JP3589531B2 (en)

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JP2002076419A (en) * 2000-08-25 2002-03-15 Sanyo Electric Co Ltd Method for installing solar battery modules
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DE202010013136U1 (en) 2010-12-16 2011-02-17 Malibu Gmbh & Co. Kg Thin-film photovoltaic module
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