JP3583406B2 - Stripping apparatus and stripping method - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a peeling device and a peeling method for transferring a thin film formed on a substrate such as a sheet film onto a substrate and then peeling the substrate from the thin film transferred onto the substrate.
[0002]
[Prior art]
2. Description of the Related Art With the increase in the density of semiconductor integrated circuits, multilayer wiring technology is essential. In order to realize a multilayer wiring, a technique for planarizing a metal wiring or an insulating film having irregularities is required. As such a flattening technique, the SOG (Spin-On-Glass) method and the PIQ method (K. Sato, S. Harada, A. Saiki, T. Kitamura, T. Okubo, and K. Mukai, "A") have been conventionally used. Novel Planar Multilevel Interconnection Technology Polyimide ", IEEE Trans. Part Hybrid Package., PHP-9, 176 (1973).
[0003]
In addition, the etch-back method (P. Elkins, K. Reinhardt, and R. Layer, "A planarization process for double metal CMOS using Spin-on Glass as a sacrifice, 100 ed. )) And the lift-off method (K. Ehara, T. Morimoto, S. Muramoto, and S. Matsuo, "Planar Interconnection Technology for LSI Fabrication Lifting proofing proofing. 1, No. 2, 419 (1984)), a chemical polishing method (CMP method: Chemical Mechanical Polishing, J. Patrick, WL Guthrie, CL Standley, PM Schiable, "Application of Chemical"). Mechanical Polishing to the Fabrication of VLSI Circuit Interconnections ", J. Electrochem. Soc., Vol. 138, No. 6, June, 1778 (1991)).
[0004]
As these flattening techniques, an etch-back method and a chemical polishing method are generally used. In these methods, after an insulating film is formed on a wiring electrode, a convex portion of the insulating film is shaved and flattened, which is a widely used method. In particular, the CMP method is a planarization technique widely used in the manufacture of semiconductor integrated circuits. However, the CMP method has a lack of stability and simplicity in some cases, such as a strong pattern dependency and a need to prepare a dummy pattern in some cases.
[0005]
In contrast to the above-mentioned flattening method, a method using transfer has been proposed as a new flattening technique (K. Machida et al., "Novel Global Planarization Technology for Interlayer Diertrics Uses Spin on Glass Pharmaceuticals, Trans. Sci.Technol.B16 (3), May / June, 1093 (1998)). In this method, a thin film to be formed is formed on a substrate in advance, dried in the air, the thin film surface is brought into contact with a substrate, and the thin film is heated and pressurized in a vacuum to form the thin film on a semiconductor substrate. It is to be transcribed.
[0006]
For example, first, as shown in FIG. 2A, a desired thin film 202 is formed on a sheet film 201 serving as a base material. On the other hand, as shown in FIG. 2B, a plurality of wiring patterns 204 are arranged on a substrate 203 to form a wiring layer. Next, as shown in FIG. 2C, the surface of the thin film 202 is brought into contact with the substrate 203, and a load is applied (pressurized) between the sheet film 201 and the substrate 203 in a vacuum, for example, and the substrate is heated. .
[0007]
As a result, as shown in FIG. 2D, the wiring pattern 204 is buried in the thin film 202 on the sheet film 201, and the unevenness of the wiring pattern 204 is absorbed on the substrate 203 and the thin film becomes flat. It is assumed that 202 is formed.
Thereafter, as shown in FIG. 2E, the sheet film 201 is peeled off from the thin film 202 to obtain a state in which the flattened thin film 202 is formed on the substrate 203.
[0008]
In the step of peeling the sheet film described above, since the peeling is performed according to the peel strength at the interface between the thin film material and the base material, the peeling state depends on the thin film material, and it may be difficult to control the peeling depending on the thin film material. there were.
For example, there is a peeling device as shown in FIG. The peeling device shown in FIG. 3A includes a suction mechanism 302 on a support 301, and a substrate 303 can be fixed on the support 301. Further, a roller support bar 305 supported by a support 304 is provided, and a take-up roller 306 is provided on the roller support bar 305 so as to be movable.
[0009]
In this peeling apparatus, first, one end of a sheet film 307 on which a thin film is formed and bonded to a substrate 303 is fixed to a take-up roller 306 that is separated from the support table 301 on the support table 301, Is fixed to the support table 301 by the substrate holder 308. The substrate 303 is fixed to the support table 301 by the suction mechanism 302. In this state, the sheet film 307 is peeled off by moving the winding roller 306 in a predetermined direction using the roller support bar 305 as a guide while winding the sheet film 307 with the winding roller 306.
[0010]
Further, in the peeling device shown in FIG. 3B, a roller support rod 305 supported by a support 304 is disposed closer to the support table 301, and a take-up roller 406 is not peeled from the substrate 303. It is configured to be in contact with. In this peeling device, the sheet film 307 immediately before peeling is pressed against the substrate 303 by the winding roller 406.
[0011]
[Problems to be solved by the invention]
Conventionally, since it was configured as described above, first, when the take-up roller is separated from the support table, the peeling position of the sheet film tends to be irregular, and it is difficult to peel uniformly. I have. On the other hand, when the sheet film is pressed against the substrate by the take-up roller, the peel angle, which is the angle between the surface of the sheet film to be peeled and the surface of the substrate, cannot be controlled, and the peeling cannot be optimized. As described above, conventionally, there has been a problem that it is difficult to control the peeling angle and the peeling state to make the state suitable for the thin film material.
[0012]
The present invention has been made in order to solve the above-described problems, and it is possible to control a peeling angle and a peeling state so as to be in a state suitable for a thin film material to be peeled and transferred from a substrate. The purpose is to enable peeling in a state.
[0013]
[Means for Solving the Problems]
The peeling device according to the present invention is provided with a support for fixing a semiconductor substrate to which a sheet-like base material to be peeled is attached, and a support that is movable in a first direction parallel to the surface of the support. A rotatable pressing roller for pressing the base material adhered to the semiconductor substrate above, and in a predetermined positional relationship with the pressing roller, are disposed movably in a first direction on the support at predetermined intervals, A rotatable take-up roller that takes up the base material, and a take-up control mechanism that drives the take-up roller. The center line of the holding roller and the center line of the take-up roller are provided in accordance with the peeling angle of the base material. The angle between the plane formed by the above and the plane on which the substrate of the support base is fixed is fixed .
According to the peeling device, the substrate can be wound by the winding roller while the substrate is pressed against the semiconductor substrate by the pressing roller.
In the above-described peeling device, a holding unit that holds a positional relationship between the pressing roller and the winding roller is provided.
[0014]
In the peeling method according to the present invention, a semiconductor substrate to which a sheet-like substrate to be peeled is attached is fixed on a support, one end of the substrate is fixed on the support, and the substrate is parallel to the surface of the support. A part of the base material is pressed by a rotatable pressing roller movably arranged in a first direction, and the other end of the base material is spaced apart from the holding roller by a predetermined distance on a support base in a predetermined positional relationship. And fixed to a rotatable take-up roller movably disposed in a first direction, while rotating the take-up roller so as to take up the substrate, and moving the take-up roller and the holding roller parallel to the surface of the support base. is moved in a first direction such state, and are not to peel off the substrate from the semiconductor substrate, corresponding to the release angle of the substrate, the plane formed by the center line of the take-up roller of the pressing roller And the angle between the support and the plane on which the substrate is fixed That has been.
According to this peeling method, the base material is peeled from the semiconductor substrate near where the substrate is pressed by the pressing roller.
[0015]
In the above-described peeling method, for example, the take-up force of the take-up roller may be increased as the peeled portion of the base material peeled from the substrate becomes longer. Further, for example, the substrate is attached to the substrate via a thin film formed on the surface of the substrate.
[0016]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a partial configuration diagram (a), a plan view (b), and a partial perspective view (c) of a peeling device according to an embodiment of the present invention as viewed from the lateral direction. In this peeling device, first, a support table 101 is provided with a suction mechanism 102, and a take-up roller 103 is provided on a roller guide 105 supported by a support 104 so as to be movable in the guide direction. The take-up roller 103 is provided at a distance from the support table 101, and an operation such as movement in a guide direction is controlled by a take-up control mechanism 106.
[0017]
A press roller 107 is supported between the take-up roller 103 and the support table 101 so as to be movable in a guide direction by a roller guide 108, and the roller guide 108 is fixed on the support table 101 by a column 104. I have. The take-up roller 103 and the pressing roller 107 are connected by a connecting portion (holding means) 109, and are configured to work together in a state where their respective positional relations are fixed.
The peeling angle θ is determined to some extent by the positional relationship between the take-up roller 103 and the pressing roller 107. Is the angle between the surface of the sheet film 112 to be separated and the surface of the substrate 111. The peeling angle θ affects the peeling state of the sheet film 112 at a peeling portion that is an intersection of the surface of the sheet film 112 where the sheet film 112 is peeled off and the surface of the sheet film 112 that is in contact with the substrate 111 (thin film). .
[0018]
In the peeling apparatus configured as described above, the substrate 111 is fixed to the center of the support 101 by the suction mechanism 102, and the sheet film 112 attached to the substrate 111 has one end thereof fixed by the fixing jig 113. The other end is fixed to the take-up roller 103, and the other end is pressed by the support table 101 by the pressing unit 114.
The take-up roller 103 and the press roller 107 are connected by a connecting portion 109, and the positional relationship between the press roller 107, the take-up roller 103, and the support table 101 is partially fixed. For example, an angle between a plane formed by the center line of the press roller 107 and the center line of the winding roller 103 and a plane on which the substrate 111 of the support base 101 is fixed is fixed at the time of winding. [0019]
The take-up control mechanism 106 controls the take-up roller 103 such as take-up rotation and movement of the roller guide 105 in the guide direction.
For example, the winding control mechanism 106 controls the rotation of the winding roller 103 and rotates the winding roller 103 to wind the sheet film 112. In this case, the take-up roller 103 and the pressing roller 107 can move freely along the roller guide 105 and the roller guide 108.
[0020]
Here, the positional relationship between the take-up roller 103 and the pressing roller 107 will be described. As described above, the peeling angle θ is determined to some extent by the positional relationship between the take-up roller 103 and the pressing roller 107. For example, when the rear end of the take-up roller 103 is present before the rear end of the pressing roller 107 in the take-up direction, the peeling angle θ is an obtuse angle. When the rear end of the take-up roller 103 is located behind the rear end of the pressing roller 107 in the take-up direction, the peeling angle θ is an acute angle.
[0021]
However, even if the rear end of the take-up roller 103 is provided before the rear end of the press roller 107 in the winding direction, if the diameter of the press roller 107 is large, the peeling angle θ does not become very large. If the diameter of the pressing roller 107 is large, the peeling angle θ cannot be made too large, and if the diameter of the pressing roller 107 is small, a larger peeling angle is obtained due to the positional relationship between the winding roller 103 and the pressing roller 107. be able to.
[0022]
Hereinafter, a thin film (not shown) made of a polyimide resin is formed on a sheet film 112 made of a thermoplastic resin film, and these are attached to a substrate 111 made of a silicon wafer having a diameter of 6 inches. A case where the sheet film 112 is peeled by the apparatus will be described.
First, the substrate 111 attached to the sheet film 112 via a thin film is fixed to the support 101 by the suction mechanism 102. Further, one end of the sheet film 112 is pressed and fixed to the support table 101 by the pressing portion 114, and the other end of the sheet film 112 is fixed to the winding roller 103 by a fixing jig 113.
[0023]
After the object to be peeled is fixed to each part as described above, the winding control mechanism 106 is operated, and while the sheet film 112 is pressed by the pressing roller 107, the winding roller 103 is rotated to wind the sheet film 112 therearound. Let me take. At first, the sheet film 112 starts to be peeled from the end of the substrate 111. However, since the substrate 111 is substantially circular in a plan view, the peeled portion is short here. That is, the intersection of the surface of the sheet film 112 where the sheet film 112 is peeled off and the surface of the sheet film 112 which is in contact with the substrate 111 (thin film) is short. Thereafter, when the peeling proceeds and the peeled portion reaches the center of the substrate 111, the peeled portion is in a long state. After that, when the peeled portion reaches the other end of the substrate, the peeled portion becomes short.
[0024]
As described above, in a portion where the peeling portion between the sheet film 112 and the substrate 111 is from a short region to a long region, for example, the winding force of the winding roller 103 is reduced. Part is controlled to be strong. As the control of the winding force, for example, the rotation speed control of the winding roller 103 may be set so that the initial portion and the end portion where the peeling portion is short are slow and the central portion where the peeling portion is long is fast. . By doing so, the winding of the sheet film 112 is performed by the winding roller 103 while keeping the tension applied to the peeled portion of the sheet film 112 per unit length constant.
[0025]
As described above, when a thermoplastic resin film is used as the sheet film 112, the tensile strength for peeling may be controlled between 0 and 3 kg according to the surface treatment of the film. For example, in the case where a surface treatment that allows the thin film to be more easily peeled than the sheet film 112 is possible, the peeling can be performed with a low tensile strength. On the other hand, when the thin film is harder to peel than the sheet film 112, it is necessary to increase the tensile strength to perform the peeling. For this reason, when peeling is performed, it is necessary to fix the sheet film 112 with the fixing jig 113 and the holding portion 114.
[0026]
Is a factor determined by the material composition of the thin film to be transferred, but an obtuse angle tends to make the peeling easier. However, whether the peeling angle θ is an obtuse angle or an acute angle is appropriately set according to the material configuration of the thin film material and the sheet film 112 serving as the base material. For example, in the case of the above-described material configuration, good peeling results were obtained by setting the peeling angle θ to 135 ° and the tensile strength for peeling to 2 kg.
[0027]
Note that, in the above description, peeling when transferred to a circular substrate has been described. However, the present invention is not limited to this, and it can be said that peeling is possible in the same manner as described above even for a rectangular substrate such as a mounting substrate. Not even.
Further, the peeling angle θ is not limited to 135 °, and for example, a larger peeling angle may be obtained by reducing the diameter of the pressing roller 107.
[0028]
For example, the take-up roller 103 and the pressing roller 107 are used in exchange for another roller having a different diameter, the length of the connecting portion 109 is changeable, and the connecting portion 109 having a different length is used. They may be used interchangeably. As described above, by changing and using the plurality of winding rollers 103 and the plurality of pressing rollers 107 having different diameters and changing the length of the connecting portion 109, it is possible to easily change the peeling angle. .
[0029]
【The invention's effect】
As described above, according to the present invention, since the film is taken up by the take-up roller while being pressed by the press roller, the peeling angle can be kept at a desired angle. As described above, an excellent effect that the peeling can be performed in a state where the peeling angle and the peeling state can be controlled can be obtained.
[Brief description of the drawings]
FIG. 1 is a partial structural view (a), a plan view (b), and a partial perspective view (c) of a peeling device according to an embodiment of the present invention, as viewed from a lateral direction.
FIG. 2 is a process diagram illustrating a planarization method by transfer.
FIG. 3 is a configuration diagram schematically showing a configuration of a conventional peeling device.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 101 ... Support stand, 102 ... Suction mechanism, 103 ... Take-up roller, 104 ... Post, 105 ... Roller guide, 106 ... Take-up control mechanism, 107 ... Holding roller, 108 ... Roller guide, 109 ... Connection part, 111 ... Substrate Reference numeral 112 denotes a sheet film. 113 denotes a fixing jig. 114 denotes a holding portion.

Claims (5)

A support base for fixing the semiconductor substrate to which the sheet-like base material to be peeled is attached,
A rotatable pressing roller that is disposed movably in a first direction parallel to the surface of the support, and presses the base material attached to the semiconductor substrate on the support,
A rotatable take-up roller that is disposed movably in the first direction at a predetermined interval on the support table in a predetermined positional relationship with the press roller, and takes up the base material;
A winding control mechanism for driving the winding roller ,
Corresponding to the peeling angle of the base material, the angle between the plane formed by the center line of the press roller and the center line of the take-up roller, and the plane of the support base on which the substrate is fixed are fixed. and it has <br/> that peeling device according to claim. The peeling device according to claim 1,
A peeling device comprising a holding unit for holding a positional relationship between the pressing roller and the winding roller. Fix the semiconductor substrate to which the sheet-shaped base material to be peeled is attached on the support base,
Fixing one end of the substrate on the support,
A part of the base material is pressed by a rotatable pressing roller arranged to be movable in a first direction parallel to the surface of the support,
The other end of the base material is fixed to a rotatable take-up roller arranged movably in the first direction at a predetermined interval on the support table in a predetermined positional relationship with the pressing roller. ,
While rotating the take-up roller to take up the base material, the take-up roller and the pressing roller are moved in a first direction parallel to the surface of the support base, and the base material is removed from the semiconductor substrate. A method of peeling ,
Corresponding to the peeling angle of the base material, the angle between the plane formed by the center line of the press roller and the center line of the take-up roller, and the plane of the support base on which the substrate is fixed are fixed. peeling wherein the <br/> things are. The peeling method according to claim 3,
The peeling method, wherein the winding force of the winding roller is increased as the length of the peeled portion of the substrate peeled from the substrate increases. The peeling method according to claim 3 or 4,
The peeling method, wherein the substrate is attached to the substrate via a thin film formed on the surface of the substrate.

Images