JP3581274B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a substrate processing apparatus and a substrate processing method for performing processing such as resist coating and development on a substrate to be processed such as a semiconductor wafer or an LCD substrate.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, as a coating and developing system for manufacturing a semiconductor device and the like, there are systems disclosed in, for example, Japanese Patent Publication No. Hei 2-30194 and Japanese Patent Application Laid-Open No. 9-45649. The coating and developing processing apparatus includes, for example, a resist processing unit that applies a resist liquid to a semiconductor wafer as a substrate to be processed, a heat treatment unit that cures the resist film on the wafer after the resist liquid is applied at a predetermined temperature atmosphere, A plurality of heat treatment units for placing the exposed wafer in a predetermined temperature atmosphere, a heat treatment unit for placing the exposed wafer in a predetermined temperature atmosphere, and a development processing unit for supplying a developing solution to the exposed substrate for development. Processing unit.
[0003]
Among these processing units, liquid processing units such as a resist processing unit and a development processing unit are configured to perform liquid processing in a cup-shaped processing chamber because excess processing liquid is scattered with high-speed rotation of a wafer. . By discharging excess processing liquid from the lower end of the processing chamber through a drain pipe, and exhausting the atmosphere of the processing chamber from the lower end of the processing chamber through an exhaust pipe, a processing liquid component (hereinafter, referred to as mist) in the form of mist is removed. The mist is quickly discharged from the unit to prevent the mist from adhering to the wafer or leaking to the outside.
[0004]
[Problems to be solved by the invention]
However, in the above-described conventional technology, there is a problem that a space occupied by an exhaust pipe or the like is large, and it is difficult to reduce the size of the device. A high-temperature gas flows through the exhaust pipe of the heat treatment unit, and it is desired that the gas be used effectively.
[0005]
Furthermore, it is difficult to sufficiently remove the mist contained in the exhaust gas, causing mist to enter the vacuum pump for exhausting, or causing mist to adhere to other parts such as the factory exhaust system, causing a failure. And the running time of the apparatus is shortened.
[0006]
In addition, since the mist adheres and accumulates inside the exhaust pipe, there is a problem that the exhaust pipe is clogged and the amount of exhaust is not constant, and the mist adhering to the inside of the exhaust pipe flows back into the processing chamber, causing particles to be generated. There is a problem that the particles adhere to the wafer. Further, as a result, there is a problem that the thickness and the line width of the resist film are uneven between the substrates, and as a result, the product yield is reduced.
[0007]
On the other hand, as a means for removing the mist of the processing liquid scattered and mixed into the exhaust pipe, for example, as disclosed in Japanese Utility Model Publication No. 60-13736 and Japanese Patent Application Laid-Open No. 9-63941, etc. There is a technique for providing a mechanism. However, in these techniques, it was difficult to completely remove the mist. Further, in order to improve the mist removal performance of the mist removal mechanism, the structure of the mist removal mechanism needs to be complicated, which causes a problem that the exhaust efficiency is reduced.
[0008]
The present invention has been made in view of such circumstances, and provides a substrate processing apparatus capable of saving space in an exhaust path and effectively utilizing heat of gas passing through the exhaust path. Aim. In addition, the amount of mist contained in the exhaust gas can be reduced to prevent mist from adhering to other parts, and the amount of mist adhering to the inside of the exhaust pipe can be reduced, thereby lowering the exhaust efficiency and causing the mist to enter the processing chamber. It is an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of suppressing the backflow of the substrate.
[0009]
[Means for Solving the Problems]
In order to solve the above problems, according to a first aspect of the present invention, a first processing unit that is set to a first temperature and performs a predetermined process on a substrate to be processed, and the inside of the first processing unit is evacuated. A first exhaust path, a second processing unit that is set at a second temperature higher than the first temperature and performs a predetermined process on the substrate to be processed, and a second exhaust unit that exhausts the inside of the second processing unit. 2 exhaust paths, wherein the first exhaust path and the second exhaust path If one is built into the other or they are in contact, There is provided a substrate processing apparatus characterized in that at least a part thereof is configured to be integrated (claim 1).
[0010]
According to such a configuration, the first exhaust path for exhausting the inside of the first processing unit set to the first temperature and the second processing set to the second temperature higher than the first temperature are provided. Since the second exhaust path for exhausting the inside of the unit is configured such that at least a part thereof is integrated, the space for the exhaust path can be reduced, and the exhaust path area occupied in the apparatus can be reduced. The device can be miniaturized by reducing the ratio. Further, in a portion where the first exhaust path and the second exhaust path are integrated, heat corresponding to a temperature difference from the second exhaust path having a higher temperature is applied to the first exhaust path. And the heat of the gas passing through the exhaust path can be effectively used.
[0011]
According to a second aspect of the present invention, a liquid processing unit that supplies a predetermined liquid to a substrate to be processed and performs processing, and a liquid processing unit system that exhausts the liquid processing unit and / or discharges the predetermined liquid Exhaust drainage path and specified Heat treatment A heat treatment unit, comprising a heat treatment unit system exhaust path for exhausting the inside of the heat treatment unit, the liquid treatment unit system exhaust drain path and the heat treatment unit system exhaust path, If one is built into the other or they are in contact, A substrate processing apparatus is provided in which at least a part thereof is configured to be integrated. Claim 4 ).
[0012]
According to such a configuration, since at least a part of the liquid treatment unit system exhaust drain passage and the heat treatment unit system exhaust passage is configured to be integrated, the space of the exhaust passage is reduced. Therefore, the ratio of the exhaust path area occupied in the device can be reduced, and the device can be downsized. Further, the heat of the heat treatment unit system exhaust path can be applied to an arbitrary part of the liquid treatment unit system exhaust drain path as required, and the heat of the gas passing through the exhaust path can be effectively utilized. Also, in the case where a device such as a heater and a cooler is separately provided in order to apply heat of the exhaust gas discharged from the heat treatment unit system without separately providing a device such as a heater and a cooler on the exhaust drainage path of the liquid processing unit system. Power consumption and the like can be reduced.
[0013]
In a third aspect of the present invention, a liquid processing unit that supplies a predetermined liquid to a substrate to be processed and performs processing, and a liquid processing unit system that exhausts the liquid processing unit and / or discharges the predetermined liquid Exhaust drainage path and specified Heat treatment A heat treatment unit, and a heat treatment unit system exhaust path for exhausting the inside of the heat treatment unit, wherein at least a part of the liquid treatment unit system exhaust drain path and the heat treatment unit system exhaust path are integrated. Temperature detecting means configured to detect the temperature inside and / or outside of the exhaust path after integrally forming the liquid processing unit system exhaust drain path and the heat treatment unit system exhaust path; A warning unit for issuing a predetermined warning when the temperature detected by the detection unit is higher or lower than a predetermined temperature range, and connected to the liquid processing unit system exhaust / drain passage higher or lower than the predetermined temperature range. And a control unit for stopping the processing of the substrate to be processed in the liquid processing unit. Claim 5 ).
[0014]
According to such a configuration, the temperature of the liquid treatment unit system exhaust / drainage path after integrally forming the heat treatment unit system / exhaust path is managed based on a preset temperature and detected by the detection unit. If the temperature deviates from the set temperature by a predetermined value or more, the processing of the substrate to be processed in the liquid processing unit is stopped, so that there is no variation in the exhaust amount due to mist adhering to the inside of the exhaust pipe, and further into the mist processing chamber. Backflow can be suppressed. Therefore, when the resist is applied by the liquid processing unit, the variation in the film thickness is small, and the line width and the like after the subsequent exposure and development are less likely to become defective.
[0015]
According to a fourth aspect of the present invention, there is provided a liquid processing unit for supplying a predetermined liquid to a substrate to be processed and performing processing, and a liquid processing unit system for exhausting the liquid processing unit and / or discharging the predetermined liquid. Exhaust drainage path and specified Heat treatment A heat treatment unit, and a heat treatment unit system exhaust path for exhausting the inside of the heat treatment unit, wherein at least a part of the liquid treatment unit system exhaust drain path and the heat treatment unit system exhaust path are integrated. Temperature detecting means configured to detect the temperature of the exhaust path after the liquid processing unit system exhaust drain path and the heat treatment unit system exhaust path are integrally configured, and the temperature is detected by the temperature detecting means. Temperature adjusting means for adjusting the temperature of at least a part of the liquid treatment unit system exhaust / drain passage and / or the heat treatment unit system exhaust passage when the temperature is higher or lower than a predetermined temperature range; If the temperature detected again by the temperature detecting means after the temperature adjustment is higher or lower than a preset temperature range, And stopping the processing of the substrate to be processed in the liquid processing unit connected to the liquid processing unit system exhaust / drainage path in which the temperature detected again is higher or lower than a predetermined temperature range. A substrate processing apparatus further comprising a control unit. Claim 6 ).
[0016]
According to such a configuration, the temperature of the liquid processing unit system exhaust drain path after integrally forming the heat processing unit system exhaust path is controlled based on a preset temperature. The temperature of the system exhaust drain path can be maintained at a predetermined temperature. Further, when the temperature detected by the detecting unit after being controlled by the temperature adjusting unit deviates from the set temperature by a predetermined value or more, the processing of the substrate to be processed in the liquid processing unit is stopped. Therefore, there is no variation in the exhaust amount due to the mist adhering to the inside of the exhaust pipe, and it is possible to further suppress the backflow of the mist into the processing chamber. Therefore, when the resist is applied by the liquid processing unit, the variation in the film thickness is small, and the line width and the like after the subsequent exposure and development are less likely to become defective.
[0017]
In the above-described substrate processing apparatus, the part where the liquid processing unit system exhaust drain path and the heat treatment unit system exhaust path are integrally configured may be configured such that one is incorporated in the other or that they are in contact with each other. Can be configured to ( Claim 7 ).
[0018]
As described above, when one path is built in the other path, the area where the paths are in contact with each other is large, and heat exchange is more easily performed. When one path comes into contact with the other path, one path and the other path can be easily attached and detached, thereby improving the work efficiency at the time of starting up the apparatus and at the time of maintenance. Can be.
[0019]
In the substrate processing apparatus, the first exhaust path and the second exhaust path may be integrally formed, or the liquid processing unit system exhaust drain path and the heat treatment unit system exhaust path may be integrated. A heat insulating material may be provided in the integrally formed portion ( Claims 2 and 8 ).
[0020]
By providing the heat insulating material in this manner, since the temperature fluctuation of the portion is small and the heat is hardly dissipated to the outside, the heat can be more efficiently supplied from one path to the other path.
[0021]
Further, in the substrate processing apparatus, at least a part of the first exhaust path or the exhaust line of the liquid processing unit system may be heated or cooled by the second exhaust path or the exhaust path of the heat treatment unit system. ( Claims 3 and 9 ).
[0022]
According to such a configuration, any part of the first exhaust path or the exhaust line of the liquid treatment unit system can be heated by the heat of the second exhaust path or the exhaust path of the heat treatment unit system as needed. Further, another portion can be cooled by the cold of the second exhaust path or the exhaust path of the heat treatment unit. In other words, since only the part where the mist easily adheres inside the liquid treatment unit system exhaust drainage path is locally heated by the heat of the heat treatment unit system exhaust path, the mist is vaporized at that part and the amount of mist adhesion is reduced. Can be. In addition, if only a part of the liquid processing unit system exhaust drain passage that is easy to perform maintenance is locally cooled by the cold heat of the heat treatment unit system exhaust path, the vaporized processing liquid component in the exhaust can be converted into a mist at that part. And mist can be efficiently captured and removed. Furthermore, according to the above configuration, when the heat of the heat treatment unit system exhaust passage acts on the liquid treatment unit system exhaust discharge passage, part of the heat of the heat treatment unit system exhaust passage is taken away, so that the substrate is kept at a high temperature conventionally. The temperature of the exhaust of the heat treatment unit system that has been discharged outside the processing apparatus can be reduced.
[0023]
Furthermore, in the substrate processing apparatus, a gas-liquid separation mechanism and / or a mist removal mechanism may be provided in the liquid processing unit system exhaust / drain passage ( Claim 10 ).
[0024]
According to such a configuration, the processing liquid is gas-liquid separated by the gas-liquid separation mechanism, and the mist is captured by the mist removal mechanism, so that the mist flowing into the exhaust path can be reduced. Furthermore, since only the gas-liquid separation mechanism and the mist removal mechanism are locally cooled by the heat of the exhaust path of the heat treatment unit, the vaporized processing liquid components can be converted into mist only in the gas-liquid separation mechanism and the mist removal mechanism. The mist can be prevented from flowing into other parts.
[0025]
In the third and fourth aspects of the present invention, it is possible to further include display means for displaying the contents of the warning by the warning means ( Claim 11 ). Thereby, the content of the warning by the warning means can be confirmed as necessary.
[0026]
According to a fifth aspect of the present invention, there is provided a liquid processing unit for supplying a predetermined liquid to a substrate to be processed and performing processing, and a liquid processing unit system for exhausting the liquid processing unit and / or discharging the predetermined liquid. Exhaust drainage path and specified Heat treatment A heat treatment unit, and a heat treatment unit system exhaust path for evacuating the inside of the heat treatment unit, wherein at least a part of the liquid treatment unit system exhaust drain path and the heat treatment unit system exhaust path is integrally formed. A substrate processing method for performing a substrate processing using a substrate processing apparatus, wherein a first step of detecting the temperature of the liquid processing unit system exhaust drainage path after the part is integrally configured, A second step of issuing a warning when the temperature is higher or lower than a predetermined temperature range; High or low A third step of stopping processing of the substrate to be processed in the liquid processing unit connected to the liquid processing unit system exhaust / drain passage. Claim 12 ).
[0027]
According to such a configuration, the temperature of the liquid treatment unit system exhaust / drainage path after integrally forming the heat treatment unit system / exhaust path is managed based on a preset temperature and detected by the detection unit. If the temperature deviates from the set temperature by a predetermined value or more, the processing of the substrate to be processed in the liquid processing unit is stopped, so that there is no variation in the exhaust amount due to mist adhering to the inside of the exhaust pipe, and further into the mist processing chamber. Backflow can be suppressed. Therefore, when the resist is applied by the liquid processing unit, the variation in the film thickness is small, and the line width and the like after the subsequent exposure and development are less likely to become defective.
[0028]
According to a sixth aspect of the present invention, there is provided a liquid processing unit for supplying a predetermined liquid to a substrate to be processed and performing processing, and a liquid processing unit system for exhausting the liquid processing unit and / or discharging the predetermined liquid. Exhaust drainage path and prescribed Heat treatment A heat treatment unit, and a heat treatment unit system exhaust path for evacuating the inside of the heat treatment unit, wherein at least a part of the liquid treatment unit system exhaust drain path and the heat treatment unit system exhaust path is integrally formed. A substrate processing method for performing a substrate processing using a substrate processing apparatus, wherein a first step of detecting the temperature of the liquid processing unit system exhaust drainage path after the part is integrally configured, When the temperature detected in the first step is equal to or higher than a predetermined temperature, a second temperature control is performed on at least a part of the liquid treatment unit system exhaust liquid discharge path and / or the heat treatment unit system exhaust liquid discharge path. A third step of re-detecting the temperature of the exhaust / drain passage of the liquid processing unit system after the part is integrally formed; and a step of detecting the temperature detected in the third step to a predetermined temperature. Range A fourth step of issuing a warning when the temperature is high or low, and a fourth step of stopping the processing of the substrate to be processed in the liquid processing unit connected to the liquid processing unit system exhaust / drain passage above or below the predetermined temperature. And a substrate processing method comprising the steps of: Claim 13 ).
[0029]
According to such a configuration, the temperature of the liquid treatment unit system exhaust drain passage after being partially integrated with the heat treatment unit system exhaust passage is controlled based on a preset temperature. The temperature of the unit system exhaust / drain passage can be maintained at a predetermined temperature. Further, when the temperature detected by the detecting means after being controlled by the temperature adjusting means deviates from the set temperature by a predetermined value or more, the processing of the substrate to be processed in the liquid processing unit is stopped. Therefore, there is no variation in the amount of exhaust due to the mist adhering to the inside of the exhaust pipe, the backflow of the mist into the processing chamber can be controlled, and a substrate with a poor film thickness and line width is not produced.
[0030]
The substrate processing method according to the fifth and sixth aspects of the present invention may further include a step of storing the contents of the warning ( Claim 14 ). Thereby, the contents of the warning can be confirmed as needed.
[0031]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
1 to 4 show the overall configuration of a resist coating and developing processing system including a substrate processing apparatus according to an embodiment of the present invention. FIG. 1 is a schematic perspective view, FIG. 2 is a schematic plan view, and FIG. FIG. 4 is a schematic side view.
[0032]
In the resist coating and developing system 1, a plurality of substrates, for example, semiconductor wafers (hereinafter, referred to as "wafers") W, are loaded into the substrate processing apparatus from the outside in a wafer cassette CR, for example, in units of 25 wafers, or unloaded from the substrate processing apparatus. A cassette station 10 for loading and unloading wafers W into and out of the wafer cassette CR, and various single-wafer processing units for performing predetermined processing on the wafers W one by one in a coating and developing process. And an interface unit 14 for transferring a wafer W between an exposure apparatus (not shown) provided adjacent to the station 12 and a processing station 12 arranged in multiple stages. are doing.
[0033]
The cassette station 10 includes a display unit 16, a cassette mounting table 20, and a wafer transfer mechanism 22 having a wafer transfer arm 22a movable in the X, Y, and Z directions and rotatable in the θ direction. On the mounting table 20, a plurality of, for example, four wafer cassettes CR can be mounted.
[0034]
The processing station 12 includes a first processing unit group G in which liquid processing units for performing predetermined processing by placing the wafer W on a spin chuck in the cup CP are arranged in multiple stages. ₁ , The second processing unit group G ₂ And a third processing unit group G in which a plurality of heat treatment units for performing predetermined processing by mounting the wafer W on the mounting table SP are arranged in multiple stages. ₃ , The fourth processing unit group G ₄ And a vertical transfer type main wafer transfer mechanism 24.
[0035]
As shown in FIG. 4, the main wafer transfer mechanism 24 is provided with a wafer transfer device 90 inside a cylindrical support 91 so as to be able to move up and down in the vertical direction (Z direction). The cylindrical support 91 is rotatable by a rotational driving force of a motor (not shown), and accordingly, the wafer transfer device 90 is also integrally rotatable.
[0036]
The wafer transfer device 90 includes a plurality of holding members (tweezers) 93 that are movable in the front-rear direction of a transfer base 92, and the transfer of the wafer W between the processing units is realized by the holding members 93. .
[0037]
First processing unit group G ₁ As a liquid processing unit, for example, a resist coating unit (COT) for coating and forming a resist film on a wafer surface by a spin coating method, and a developing unit (DEV) for developing a circuit pattern after exposure are stacked in multiple stages, for example, in two stages. I have. Second processing unit group G ₂ However, the resist coating unit (COT) and the developing unit (DEV) are stacked in multiple stages, for example, two stages.
[0038]
Third processing unit group G ₃ , The fourth processing unit group G ₄ For example, as a heat treatment unit, for example, a cooling unit (COL) for cooling the wafer W to a predetermined temperature, an adhesion unit (AD) for making the wafer W hydrophobic before applying a photoresist, and a position adjustment of the wafer W Unit (ALIM) for performing the transfer, an extension unit (EXT) for transferring the wafer W between the stations, a baking unit (HP) for heating the wafer W to a predetermined temperature, and the like in multiple stages, for example, eight stages. Are stacked.
[0039]
A portable pickup cassette CR is disposed at the front of the interface section 14, a peripheral exposure device 28 is disposed at the rear, and a wafer transfer mechanism 26 is disposed at the center. The wafer transfer mechanism 26 has a wafer transfer arm 26a. The wafer transfer arm 26a moves in the X direction and the Z direction, and can access the cassette CR and the peripheral exposure device 28. The wafer transfer arm 26a is rotatable in the θ direction, and is connected to the fourth processing unit group G on the processing station 12 side. ₄ The extension unit (EXT) belonging to the multi-stage unit as well as the wafer transfer table (not shown) on the adjacent exposure apparatus side can be accessed.
[0040]
In the resist coating and developing system 1 configured as described above, the unprocessed wafers W are unloaded one by one from the wafer cassette CR by the wafer transfer mechanism 22 and loaded into the alignment unit (ALIM). Next, the wafer W positioned here is unloaded by the main wafer transfer mechanism 24, loaded into an adhesion unit (AD), and subjected to an adhesion process. After the completion of the adhesion process, the wafer W is removed. For the main wafer transfer mechanism 24 It is carried out and transported to a cooling unit (COL) where it is cooled. Next, the wafer W is transferred to a resist coating unit (COT) to perform resist coating, and further, is subjected to a pre-baking process in a baking unit (HP), and transferred to the interface unit 14 via an extension cooling unit (EXTCOL). Then, it is conveyed from there to an adjacent exposure apparatus. Further, the wafer W subjected to the exposure processing by the exposure apparatus is transferred to the processing station 12 by the wafer transfer mechanism 26 via the interface unit 14 and the extension unit (EXT). At the processing station 12, Main wafer transfer mechanism 24 Transports the wafer W to a baking unit (HP) to perform a post-exposure process, further transports the wafer W to a developing unit (DEV) to perform a developing process, and then performs a post-baking process in the baking unit (HP) to perform a cooling unit. After cooling at (COL), the sheet is conveyed to the cassette station 10 via the extension unit (EXT). The wafer subjected to the predetermined processing as described above is Wafer transfer mechanism 22 Are stored in the wafer cassette CR.
[0041]
Next, a configuration of a liquid processing unit having an exhaust / drainage path according to an embodiment of the present invention will be described. Here, as an example of the liquid processing unit, a first processing unit group G ₁ And second processing unit group G ₂ The structure of the resist coating unit (COT) arranged in the above will be described. As shown in FIG. 5, the resist coating unit (COT) is provided with a coater cup CP so as to constitute a processing chamber. In the coater cup CP, a wafer W is held by, for example, a vacuum chuck or the like. , A wafer mounting table 31 configured to rotate the wafer W at a high speed by a driving mechanism 30 is provided.
[0042]
Further, a nozzle 32 for supplying a predetermined processing liquid to the surface of the wafer W is provided above the wafer mounting table 31, and a nozzle as a gas-liquid separating means is provided at the bottom of the coater cup CP. Separator 35 Is provided. The Separator 35 Has a so-called labyrinth structure with a hanging wall 35a and a standing wall 35b, and has a gas-liquid separation function by inertial collision. The atmosphere in the coater cup CP is configured such that after the liquid component is partially removed in the separator 35, the atmosphere is discharged from the exhaust port 34 to the liquid processing system exhaust pipe 36 and guided to the factory exhaust system (not shown). Have been. The upright wall 35b also has a function of preventing the processing liquid from flowing directly into the exhaust port 34.
[0043]
On the other hand, the excess processing liquid scattered in the coater cup CP and the liquid component separated from the exhaust atmosphere in the separator 35 are discharged from the drain port 33 to the drain pipe 37, and are discharged to a factory drain system (not shown). It is configured to be guided to.
[0044]
The liquid treatment system exhaust pipe 36 is partially incorporated in the heat treatment system exhaust pipe 42 for exhausting the atmosphere in the baking unit (HP), which is a heat treatment unit, as shown in FIG. 42 and is integrated. Therefore, it is possible to save the space of the exhaust passage by that much, and it is possible to reduce the ratio of the exhaust passage area occupied in the device and to reduce the size of the device.
[0045]
Next, a description will be given of an exhaust / drain processing procedure in a resist coating unit (COT) as a liquid processing unit having an exhaust / drain path according to the embodiment of the present invention.
[0046]
First, the wafer W is carried into the coater cup CP of the resist coating unit (COT), and is held on the wafer mounting table 31. Next, a predetermined amount of the processing liquid is dropped from the nozzle 32 to a substantially central portion of the surface of the wafer W, and the driving mechanism 30 rotates the wafer at a high speed so that the entire surface of the wafer W is uniformly coated with a resist liquid as the processing liquid. I do. At this time, the atmosphere in the coater cup CP is exhausted from the exhaust port 34 to the liquid processing system exhaust pipe 36 after a part of the liquid forming portion is removed in the separator 35 as the gas-liquid separating means. On the other hand, the surplus processing liquid scattered in the coater cup CP and the liquid component separated from the exhaust atmosphere in the separator 35 are prevented from flowing into the exhaust port 34 by the upright wall 35b, and the drain pipe 33 It is discharged to 37 and guided to a factory drainage system (not shown).
[0047]
The atmosphere in the coater cup CP exhausted from the exhaust port 34 to the liquid processing system exhaust pipe 36 passes through a portion 42 a integrated with the heat treatment system exhaust pipe 42. In the heat treatment system exhaust pipe 42, hot exhaust gas at an ambient temperature of, for example, 90 ° C. in the baking unit (HP) flows. On the other hand, the atmosphere in the coater cup CP is set to a temperature lower than the atmosphere temperature in the baking unit (HP), for example, 23 ° C. For this reason, the heat exhaust temperature acts on the liquid processing system exhaust pipe 36 at a portion 42 a integrated with the heat processing system exhaust pipe 42, and heat exchange is performed between the liquid processing system exhaust pipe 36 and the heat processing system exhaust pipe 42. The liquid processing system exhaust pipe 36 and the atmosphere in the coater cup CP flowing in the liquid processing system exhaust pipe 36 are heated.
[0048]
Therefore, it is possible to suppress that the processing liquid component in the exhaust gas is liquefied in the liquid processing system exhaust pipe 36 and adheres to the inner wall of the liquid processing system exhaust pipe 36 as mist. In addition, in the above-mentioned heating, a device such as a heater is separately used because heat of a heat treatment system unit conventionally used in the device is used without using a device such as a heater separately. This is also effective in reducing costs such as the amount of electricity used. Further, the temperature of the heat treatment system exhaust flowing through the heat treatment system exhaust pipe 42, which has been conventionally exhausted to a factory exhaust system (not shown) at a high temperature, also flows to the factory exhaust system at a lower temperature than before due to the heat exchange. Therefore, it is possible to suppress fires and the like in the factory exhaust system to enhance safety.
[0049]
In the above embodiment, the liquid processing system exhaust pipe 36 is incorporated in the heat treatment system exhaust pipe 42 and is integrated with the heat treatment system exhaust pipe 42. However, the heat treatment system exhaust pipe 42 is connected to the liquid processing system exhaust pipe 36. It is good also as a structure integrated by making it contact.
[0050]
Further, the liquid treatment system exhaust pipe 36 may have a configuration in which a mist trap 38 is provided after a portion 42a integrated with the heat treatment system exhaust pipe 42. The mist trap 38 is formed by an upright wall 41 provided at the bottom and a detachable filter 40. Drainage chamber 38a And an exhaust chamber 38b. A drain pipe 37 extends at the bottom of the drain chamber 38a, and a liquid processing system exhaust pipe 36 extends at the bottom of the exhaust chamber 38b. In addition, Mist trap 38 The connecting portion between the exhaust pipe 36 and the drain pipe 37 is detachably configured by a connecting jig 39.
[0051]
Accordingly, the processing liquid component in the exhaust gas flowing down in the liquid processing system exhaust pipe 36 is liquefied in the drain chamber 38 a in the mist trap 38, and is discharged from the drain pipe 37 to the factory drain system (not shown). ). In addition, since the processing liquid component remaining in the exhaust gas without being liquefied is captured by the filter 40, the processing liquid component in the exhaust gas flowing into the exhaust chamber 38b can be further reduced.
[0052]
Further, the mist trap 38 may be built in a heat treatment system exhaust pipe 43 for exhausting an atmosphere in a cooling unit (COL) which is a heat treatment unit, and may be integrated with the heat treatment system exhaust pipe 43. In the heat treatment system exhaust pipe 43, exhaust gas having an ambient temperature of, for example, 23 ° C. in the cooling unit (COL) flows. On the other hand, as described above, the exhaust gas flowing into the mist trap 38 via the liquid processing system exhaust pipe 36 is heated to a temperature higher than at least 23 ° C. Therefore, through this liquid processing system exhaust pipe 36, Mist trap 38 The exhaust gas flowing into the inside is cooled by the exhaust gas flowing through the heat treatment system exhaust pipe 43 in a portion 43 a integrated with the heat treatment system exhaust pipe 43, that is, in the mist trap 38.
[0053]
Therefore, according to such a configuration, the processing liquid component in the exhaust flowing down the liquid processing system exhaust pipe 36 is promoted to be liquefied in the drain chamber 38a, and the processing liquid component in the exhaust is further reduced. The exhaust gas can be sent to the exhaust filter 40, the exhaust chamber 38 b, and the exhaust pipe 36 following the exhaust filter 40. Further, the amount of mist captured by the filter 40 can be reduced, the frequency of replacement of the filter 40 can be reduced, and the maintenance performance can be improved. Further, the mist removal mechanism having a simple configuration can sufficiently remove mist without reducing the exhaust amount and without reducing the exhaust efficiency.
[0054]
Further, according to such a configuration, the exhaust gas is exhausted to the factory exhaust system (not shown) in a state where the processing liquid component in the exhaust is sufficiently removed by lowering the exhaust temperature, so that the safety in the factory exhaust system is improved. Mist can be reduced on the inner wall of the factory exhaust system, and maintenance can be improved. Further, in the above-mentioned cooling, a device such as a cooler is separately used because a cooler or the like is not separately used, but the cold heat of the heat treatment system unit conventionally used in the device is used. It is also effective in reducing the cost of electricity consumption and the like as compared with the case.
[0055]
The mist trap 38 is preferably disposed at a position on the liquid processing system exhaust pipe 36 where maintenance is easily performed, for example, at a position immediately before the liquid processing system exhaust pipe 36 comes out of the substrate processing apparatus. Further, in this example, the mist trap 38 is built in the heat treatment system exhaust pipe 43 and integrated with the heat treatment system exhaust pipe 43, but the heat treatment system exhaust pipe 43 is brought into contact with the mist trap 38 to be integrated. A configuration may be adopted.
[0056]
Further, after the part 42a in which the liquid treatment system exhaust pipe 36 is integrated with the heat treatment system exhaust pipe 42, the liquid treatment system exhaust pipe 36 is partially incorporated in a heat treatment system exhaust pipe 43 for exhausting the atmosphere in a cooling unit (COL) which is a heat treatment unit. The portion integrated with the heat treatment system exhaust pipe 43 is not limited to only on the mist trap as in the above-described example. It is also effective in a substrate processing apparatus in which no mist trap is arranged on the exhaust path.
[0057]
In the above-described embodiment, as shown in the cross-sectional view of FIG. 6A, the liquid processing system exhaust pipe 36 is partially incorporated in the heat treatment system exhaust pipe 42 or 43, and is partially integrated. The heat of the heat treatment system exhaust pipe 42 or 43 is caused to act on the liquid treatment system exhaust pipe 36. As described above, since one exhaust pipe incorporates the other exhaust pipe, the heat of one exhaust pipe can be sufficiently and uniformly transmitted to the other exhaust gas.
[0058]
On the other hand, in order to increase the heat effect, the outside of the heat treatment system exhaust pipe 42 or 43 may be covered with a heat insulating material 60 as shown in FIG. 6 (b). The processing system exhaust pipe 36 may be configured to be partially integrated by partially incorporating the heat treatment system exhaust pipe 42 or 43. With such a configuration, the inside thereof is hardly influenced by the external atmosphere temperature, and the heat of the heat treatment system exhaust pipe 42 or 43 does not dissipate into the external atmosphere. Therefore, the heat of the heat treatment system exhaust pipe 42 or 43 can be efficiently supplied to the liquid treatment system exhaust pipe 36.
[0059]
Further, as shown in FIG. 6 (d), the liquid processing system exhaust pipe 36 and the heat treatment system exhaust pipe 42 or 43 may be partially brought into contact with each other to be partially integrated. With such a configuration, the one exhaust pipe and the other exhaust pipe can be easily attached and detached, so that work efficiency at the time of starting up the apparatus and at the time of maintenance can be improved.
[0060]
On the other hand, in the above-described embodiment, the excess processing liquid scattered in the coater cup CP and the liquid component separated from the exhaust atmosphere in the separator 35 are discharged from the liquid discharge port 33 to the liquid discharge pipe 37 and are discharged from the factory. It is configured to be guided to a drainage system (not shown). Instead, for example, as shown in FIG. 7, the lower end of the drainage pipe 37 is connected to a drain tank 70 having a capacity of about 20 liters, It is also possible to adopt a configuration in which drainage is stored.
[0061]
Further, the drain tank 70 and the mist trap 38 are connected by an auxiliary exhaust pipe 71 to directly exhaust the atmosphere in the upper part of the drain tank 70, and also to reduce the atmosphere in the coater cup CP to the drain pipe 37, the drain tank 70 and the auxiliary tank. It is also possible to configure so that air can be exhausted through the exhaust pipe 71.
[0062]
Further, the drain tank 70 is provided in a heat treatment system exhaust pipe 43 for exhausting an atmosphere in a cooling unit (COL), which is a heat treatment unit, and may be configured to be integrated with the heat treatment system exhaust pipe 43.
[0063]
With such a configuration, the evaporation of the organic solvent contained in the processing liquid in the drain tank 70 can be suppressed, and the mist content ratio in the exhaust gas flowing out to the auxiliary exhaust pipe 71 can be reduced. Can be.
[0064]
Further, the auxiliary exhaust pipe 71 may be partially incorporated in the heat treatment system exhaust pipe 42 for exhausting the atmosphere in the baking unit (HP), which is a heat treatment unit, and may be integrated with the heat treatment system exhaust pipe 42. In this case, at a portion 42b integrated with the heat treatment system exhaust pipe 42, the heat exhaust temperature acts on the auxiliary exhaust pipe 71, heat exchange is performed between the auxiliary exhaust pipe 71 and the heat treatment system exhaust pipe 42, and the auxiliary exhaust The atmosphere in the coater cup CP flowing through the pipe 71 and the auxiliary exhaust pipe 71 is heated.
[0065]
Therefore, with such a configuration, the processing liquid component in the exhaust gas liquefies in the auxiliary exhaust pipe 71, Auxiliary exhaust pipe 71 It can be prevented that the mist adheres to the inner wall and solidifies. In addition, in the above-mentioned heating, a device such as a heater is separately used because heat of a heat treatment system unit conventionally used in the device is used without using a device such as a heater separately. This is also effective in reducing costs such as the amount of electricity used.
[0066]
In the above configuration, the drain tank 70 is incorporated in the heat treatment system exhaust pipe 43 and is integrated with the heat treatment system exhaust pipe 43. However, the drain tank 70 is integrated by bringing the heat treatment system exhaust pipe 43 into contact with the drain tank 70. It may be configured. Further, in the above example, the auxiliary exhaust pipe 71 is incorporated in the heat treatment system exhaust pipe 42 and is integrated with the heat treatment system exhaust pipe 42, but the heat treatment system exhaust pipe 42 is brought into contact with the auxiliary exhaust pipe 71. An integrated configuration may be used.
[0067]
As shown in FIG. 8, the temperature of each exhaust pipe may be controlled by a control device (CPU) 83. An exhaust pipe 36 connected to the bottom of the exhaust chamber 38 b of the mist trap 38, and a heat treatment system exhaust pipe 43 in which the mist trap 38 is built in the heat treatment system exhaust pipe 43 and connected to a portion 43 a integrated with the heat treatment system exhaust pipe 43. In addition, the temperature sensor 81 is attached to the heat treatment system exhaust pipe 43 in which the drain tank 70 is built in the heat treatment system exhaust pipe 43 and connected to the portion 43 b integrated with the heat treatment system exhaust pipe 43. The temperature sensor 81 is connected to a temperature detection mechanism 82, and is configured to detect the temperature inside or outside each exhaust pipe.
[0068]
FIG. 9A is a flowchart illustrating a control procedure in the substrate processing apparatus according to the embodiment of the present invention.
First, the temperature of each exhaust pipe to which the temperature sensor 81 is attached, that is, the temperature of exhaust gas flowing through each exhaust pipe is detected by the temperature detection mechanism 82 (STEP 101). The temperature data detected by the temperature detecting mechanism 82 is transmitted to the control device (CPU) 83, and it is determined whether the temperature is equal to or lower than a predetermined temperature (STEP 102).
[0069]
If the detected temperature data is equal to or lower than the predetermined temperature, the substrate processing apparatus continues the predetermined processing as a normal operation (STEP 103). If the detected temperature data is higher than the predetermined temperature, a warning signal is issued from the control device (CPU) 83 to the alarm generation device 84, and a predetermined alarm is generated (STEP 104). The alarm may be an alarm sound, flashing of a predetermined color of a signal tower (not shown), or a combination thereof. Further, the alarm content may be displayed on the display unit 16 attached to the cassette station 10 simultaneously with the occurrence of the alarm, or the alarm content may be stored in a storage unit in the control device (CPU) 83, and if necessary, The contents of the alarm may be confirmed on the display unit 16.
[0070]
After issuing the warning in this manner, the control device (CPU) 83 further controls the processing of the wafer W in the liquid processing unit and the heat treatment unit to which the exhaust pipe in which the abnormal temperature is detected is stopped. (STEP 105).
[0071]
Further, as shown in FIG. 8, the mist trap 38 may be built in the heat treatment system exhaust pipe 43, and the temperature controller 80 may be attached to a portion 43a integrated with the heat treatment system exhaust pipe 43. If the temperature data detected by the temperature detecting mechanism 82 is higher than a preset temperature, the temperature may be controlled by the temperature controller 80.
[0072]
FIG. 9B is a flowchart illustrating a control process when the temperature controller 80 is attached.
As in the above example, the temperature of each exhaust pipe to which the temperature sensor 81 is attached, that is, the temperature of exhaust gas flowing through each exhaust pipe is detected by the temperature detection mechanism 82 (STEP 201). The detected temperature data is transmitted to the control device (CPU) 83, and it is determined whether the temperature is lower than a predetermined temperature (STEP 202).
[0073]
If the detected temperature data is equal to or lower than the predetermined temperature, the substrate processing apparatus continues the predetermined processing as a normal operation (STEP 203). If the detected temperature data is higher than the predetermined temperature, the control device (CPU) 83 outputs a control signal to the temperature controller 80, and the temperature controller 80 that has received the control signal immediately performs cooling. It starts (STEP 204).
[0074]
After a predetermined time has elapsed, temperature data is detected again (STEP 205). If the detected temperature is equal to or lower than the predetermined temperature, control device (CPU) 83 outputs a stop signal to temperature controller 80, and the substrate processing apparatus continues predetermined processing as normal operation (STEP 203). On the other hand, if the temperature data detected after the lapse of the predetermined time is higher than the predetermined temperature, a warning signal is issued to the alarm generating device 84 and a predetermined alarm is issued (STEP 206). As in the example described above, the alarm may be an alarm sound, flashing of a predetermined color of a signal tower (not shown), or a combination thereof. Further, the alarm content may be displayed on the display unit 16 attached to the cassette station 10 simultaneously with the occurrence of the alarm. The content of the alarm may be stored in a storage unit in the control device (CPU) 83, and the content of the alarm may be confirmed on the display unit 16 as necessary.
[0075]
After issuing the warning in this manner, the control device (CPU) 83 further controls the processing of the wafer W in the liquid processing unit and the heat treatment unit to which the exhaust pipe in which the abnormal temperature is detected is stopped. (STEP 207).
[0076]
By controlling the temperature of each exhaust pipe with the above configuration, the temperature of the exhaust flowing through each exhaust pipe can be maintained at a desired temperature without the liquid processing system exhaust path being excessively heated by the heat treatment system exhaust path. Can be.
[0077]
In the above embodiment, the temperature sensor 81 is mounted outside each exhaust pipe. However, the temperature sensor 81 may be mounted inside each exhaust pipe. Further, the position and the number of the temperature sensors 81 to which each exhaust pipe is attached are not limited to those in the above-described embodiment. Similarly, as many temperature controllers 80 as required for temperature control can be attached. By doing so, it is possible to manage the temperature of the exhaust gas flowing in each exhaust path at a desired position on each exhaust path, so that vaporization and liquefaction of the processing liquid component in the exhaust gas flowing through the liquid processing system exhaust path can be performed as desired. Can be controlled at the site.
[0078]
Further, in the above-described embodiment, the procedure of exhausting and draining the liquid processing unit has been described by taking the resist coating unit (COT) as an example, but the same processing is performed in other liquid processing units such as the developing unit (DEV). It can be carried out.
[0079]
Further, although the substrate processing apparatus in the above-described embodiment performs a predetermined process on a wafer, the present invention can also be applied to an apparatus that performs a predetermined process on another substrate to be processed, such as an LCD substrate. .
[0080]
【The invention's effect】
As described above, according to the present invention, the first exhaust path for exhausting the inside of the first processing unit set to the first temperature and the second exhaust path set to the second temperature higher than the first temperature are provided. Since the second exhaust path for exhausting the inside of the second processing unit is configured such that at least a part thereof is integrated, the space of the exhaust system can be reduced, and the exhaust occupied in the apparatus can be reduced. The device can be downsized by reducing the proportion of the path area. Further, in a portion where the first exhaust path and the second exhaust path are integrated, heat corresponding to a temperature difference from the second exhaust path having a higher temperature is applied to the first exhaust path. And the heat of the gas passing through the exhaust path can be effectively used.
[0081]
Further, since the liquid treatment unit system exhaust drainage path and the heat treatment unit system exhaust path are configured such that at least a part thereof is integrated, the space of the exhaust system path can be reduced, and And the size of the apparatus can be reduced by reducing the ratio of the exhaust path area to the total. Further, the heat of the heat treatment unit system exhaust path can be applied to an arbitrary part of the liquid treatment unit system exhaust drain path as required, and the heat of the gas passing through the exhaust path can be effectively utilized. Also, in the case where a device such as a heater and a cooler is separately provided in order to apply heat of the exhaust gas discharged from the heat treatment unit system without separately providing a device such as a heater and a cooler on the exhaust drainage path of the liquid processing unit system. Power consumption and the like can be reduced.
[0082]
Further, the temperature of the liquid treatment unit system exhaust / drainage path after integrally configuring the heat treatment unit system / exhaust path is managed based on a preset temperature, and the temperature detected by the detection unit is changed from the set temperature. If the difference is more than a predetermined value, the processing of the substrate to be processed in the liquid processing unit is stopped, so that there is no variation in the exhaust amount due to mist adhesion to the inside of the exhaust pipe, and further, the backflow of the mist into the processing chamber is suppressed. Can be. Therefore, when the resist is applied by the liquid processing unit, the variation in the film thickness is small, and the line width and the like after the subsequent exposure and development are less likely to become defective.
[0083]
Furthermore, in order to control the temperature of the liquid processing unit system exhaust drainage path after integrally forming the heat treatment unit system exhaust path based on a preset temperature, the liquid processing unit system exhaust drainage path is controlled. Can be maintained at a predetermined temperature. Further, when the temperature detected by the detecting unit after being controlled by the temperature adjusting unit deviates from the set temperature by a predetermined value or more, the processing of the substrate to be processed in the liquid processing unit is stopped. Therefore, there is no variation in the exhaust amount due to the mist adhering to the inside of the exhaust pipe, and it is possible to further suppress the backflow of the mist into the processing chamber. Therefore, when the resist is applied by the liquid processing unit, the variation in the film thickness is small, and the line width and the like after the subsequent exposure and development are less likely to become defective.
[Brief description of the drawings]
FIG. 1 is a schematic perspective view showing the overall configuration of a resist coating and developing processing system to which a substrate processing apparatus according to an embodiment of the present invention is applied.
FIG. 2 is a schematic plan view showing the overall configuration of a resist coating and developing system to which the substrate processing apparatus according to one embodiment of the present invention is applied.
FIG. 3 is a schematic front view showing the overall configuration of a resist coating and developing system to which the substrate processing apparatus according to one embodiment of the present invention is applied.
FIG. 4 is a schematic side view showing the overall configuration of a resist coating and developing processing system to which the substrate processing apparatus according to one embodiment of the present invention is applied.
FIG. 5 is a schematic view showing a liquid processing unit as a substrate processing apparatus according to one embodiment of the present invention.
FIG. 6 is a schematic cross-sectional view of an exhaust and drain path used in the substrate processing apparatus according to the embodiment of the present invention.
FIG. 7 is a schematic view showing a liquid processing unit as a substrate processing apparatus according to another embodiment of the present invention.
FIG. 8 is a schematic view showing a liquid processing unit as a substrate processing apparatus according to still another embodiment of the present invention.
FIG. 9 is an explanatory view showing a temperature control method in an exhaust path in a liquid processing unit as the substrate processing apparatus shown in FIG.
[Explanation of symbols]
16; display unit (display means)
33; drain port (liquid processing unit system exhaust drain path)
34; exhaust port (exhaust drainage path for liquid processing unit)
35; separator (gas-liquid separation mechanism)
35a; Hanging wall
35b; standing wall
36; liquid processing system exhaust pipe (liquid processing unit system exhaust drainage path)
37; drainage pipe (liquid processing unit system exhaust drainage path)
38; Mist trap (mist removal mechanism)
38a; drainage chamber
38b; exhaust chamber
42, 43; heat treatment system exhaust pipe
60; thermal insulation
70; drain tank (gas-liquid separation mechanism)
71; auxiliary exhaust pipe
80; temperature controller (temperature control means)
81; temperature sensor
82; temperature detection mechanism
83; control device (CPU) (control means)
84; alarm generator (means for generating an alarm)
W; semiconductor wafer (substrate to be processed)
COT; resist coating unit (liquid processing unit)
DEV; Developing unit (liquid processing unit)
HP; baking unit (heat treatment unit)
COL; Cooling unit (heat treatment unit)

Claims (14)

A first processing unit that is set to a first temperature and performs a predetermined process on a substrate to be processed;
A first exhaust path for exhausting the inside of the first processing unit;
A second processing unit that is set at a second temperature higher than the first temperature and performs a predetermined process on the substrate to be processed;
A second exhaust path for exhausting the inside of the second processing unit,
The first exhaust path and the second exhaust path are configured such that at least one of them is integrated with the other when one of them is built in the other or when they are in contact with each other. A substrate processing apparatus. 2. The substrate processing apparatus according to claim 1 , wherein a heat insulating material is provided at a portion where the first exhaust path and the second exhaust path are integrally formed. 3. 3. The substrate processing apparatus according to claim 1 , wherein at least a part of the first exhaust path is heated or cooled by the second exhaust path. A liquid processing unit that supplies a predetermined liquid to the substrate to be processed and performs processing;
A liquid treatment unit system exhaust / drain passage for exhausting the liquid treatment unit and / or discharging the predetermined liquid;
A heat treatment unit for performing a predetermined heat treatment on the substrate to be processed,
A heat treatment unit system exhaust path for exhausting the inside of the heat treatment unit,
The liquid treatment unit system exhaust drain path and the heat treatment unit system exhaust path are such that at least one of them is integrated into the other or is in contact with them, so that at least a part of them is integrated. A substrate processing apparatus characterized by being configured. A liquid processing unit that supplies a predetermined liquid to the substrate to be processed and performs processing;
A liquid treatment unit system exhaust / drain passage for exhausting the liquid treatment unit and / or discharging the predetermined liquid;
A heat treatment unit for performing a predetermined heat treatment on the substrate to be processed,
A heat treatment unit system exhaust path for exhausting the inside of the heat treatment unit,
The liquid processing unit system exhaust drainage path and the heat treatment unit system exhaust path are configured such that at least a part thereof is integrated,
Temperature detection means for detecting a temperature inside or / and outside the exhaust path after integrally forming the liquid processing unit system exhaust drain path and the heat treatment unit system exhaust path;
When the temperature detected by the temperature detection unit is higher or lower than a predetermined temperature range, a warning unit that issues a predetermined warning,
A substrate processing apparatus further comprising: control means for stopping the processing of the substrate to be processed in the liquid processing unit connected to the liquid processing unit system exhaust / drainage path higher or lower than the predetermined temperature range. apparatus. A liquid processing unit that supplies a predetermined liquid to the substrate to be processed and performs processing;
A liquid treatment unit system exhaust / drain passage for exhausting the liquid treatment unit and / or discharging the predetermined liquid;
A heat treatment unit for performing a predetermined heat treatment on the substrate to be processed,
A heat treatment unit system exhaust path for exhausting the inside of the heat treatment unit,
The liquid processing unit system exhaust drainage path and the heat treatment unit system exhaust path are configured such that at least a part thereof is integrated,
Temperature detection means for detecting the temperature of the exhaust path after integrally configuring the liquid processing unit system exhaust drain path and the heat treatment unit system exhaust path,
A temperature for adjusting the temperature of at least a part of the liquid treatment unit system exhaust drain path and / or the heat treatment unit system exhaust path when the temperature detected by the temperature detecting means is higher or lower than a predetermined temperature range. Adjusting means;
A warning unit that issues a predetermined warning when the temperature detected by the temperature detection unit after the temperature adjustment by the temperature adjustment unit is higher or lower than a preset temperature range,
Control means for stopping the processing of the substrate to be processed in the liquid processing unit connected to the liquid processing unit system exhaust / drainage passage, wherein the temperature detected again is higher or lower than a predetermined temperature range. A substrate processing apparatus characterized by the above-mentioned. In the part where the liquid processing unit system exhaust drainage path and the heat treatment unit system exhaust path are integrally formed, one of the liquid processing unit system exhaust drainage path and the heat treatment unit system exhaust path is built in the other. and it has, or the substrate processing apparatus according to claim 5 or claim 6, characterized in that they are in contact. Claim 7 to claim 5 and wherein the liquid processing units based exhaust drainage path and the thermal processing unit based exhaust path, characterized in that the heat insulation material is provided in a portion which is integrally constructed 1 A substrate processing apparatus according to any one of the preceding claims. The substrate processing apparatus according to any one of claims 5 to claim 8, characterized in that heating or cooling in the heat treatment unit system exhaust path at least a part of the liquid processing units based exhaust drain paths. The substrate processing apparatus according to any one of claims 5 to 9 , wherein a gas-liquid separation mechanism and / or a mist removal mechanism are provided in the liquid processing unit system exhaust / drain passage. The substrate processing apparatus according to claim 5 , further comprising a display unit configured to display a content of a warning by the warning unit. A liquid processing unit that supplies a predetermined liquid to a substrate to be processed and performs processing, a liquid processing unit system exhaust / drainage path that exhausts the liquid processing unit and / or discharges the predetermined liquid, and a substrate to be processed. A heat treatment unit for performing a predetermined heat treatment on the heat treatment unit, and a heat treatment unit system exhaust path for exhausting the inside of the heat treatment unit. The liquid treatment unit system exhaust drain path and the heat treatment unit system exhaust path are at least one of them. A substrate processing method for performing substrate processing using a substrate processing apparatus in which the unit is integrally configured,
A first step of detecting the temperature of the liquid treatment unit system exhaust / drain passage after the part is integrally formed;
Issuing a warning if the temperature is above or below a predetermined temperature range; and
A third step of stopping processing of the substrate to be processed in the liquid processing unit connected to the liquid processing unit system exhaust / drain passage higher or lower than the predetermined temperature range. Processing method. A liquid processing unit that supplies a predetermined liquid to a substrate to be processed and performs processing, a liquid processing unit system exhaust / drainage path that exhausts the liquid processing unit and / or discharges the predetermined liquid, and a substrate to be processed. A heat treatment unit for performing a predetermined heat treatment on the heat treatment unit, and a heat treatment unit system exhaust path for exhausting the inside of the heat treatment unit. The liquid treatment unit system exhaust drain path and the heat treatment unit system exhaust path are at least one of them. A substrate processing method for performing substrate processing using a substrate processing apparatus in which the unit is integrally configured,
A first step of detecting the temperature of the liquid treatment unit system exhaust / drain passage after the part is integrally formed;
When the temperature detected in the first step is equal to or higher than a predetermined temperature, a second temperature control is performed on at least a part of the liquid treatment unit system exhaust liquid discharge path and / or the heat treatment unit system exhaust liquid discharge path. Process and
A third step of again detecting the temperature of the liquid treatment unit system exhaust / drainage passage after the part is integrally formed;
A fourth step of issuing a warning when the temperature detected in the third step is higher or lower than a predetermined temperature range;
And a fifth step of stopping the processing of the substrate to be processed in the liquid processing unit connected to the liquid processing unit system exhaust / drain passage higher or lower than the predetermined temperature. Method. 14. The substrate processing method according to claim 12 , further comprising a step of storing the contents of the warning.

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