JP3560069B2 - Low-temperature sintering ceramic substrate, its material, and its manufacturing method - Google Patents
Low-temperature sintering ceramic substrate, its material, and its manufacturing method Download PDFInfo
- Publication number
- JP3560069B2 JP3560069B2 JP06568494A JP6568494A JP3560069B2 JP 3560069 B2 JP3560069 B2 JP 3560069B2 JP 06568494 A JP06568494 A JP 06568494A JP 6568494 A JP6568494 A JP 6568494A JP 3560069 B2 JP3560069 B2 JP 3560069B2
- Authority
- JP
- Japan
- Prior art keywords
- low
- ceramic substrate
- alumina
- weight
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Description
【０００１】
【産業上の利用分野】
本発明は、曲げ強度を高めると同時に誘電率を低下させた低温焼結が可能なセラミックス基板、およびそのセラミックス基板用材料、ならびに、そのセラミックス基板の製造方法に関する。
【０００２】
【従来の技術】
ガラス・セラミックス基板（低温焼成基板）は、内層の導体と基板とを同時焼成して形成される。配線用の導体としては、金（Ａｕ）、銀（Ａｇ）、銀−パラジウム合金（Ａｇ−Ｐｄ）、銅（Ｃｕ）等が使用される。したがって、その焼成温度は８００〜１１００℃程度である。このようなガラス・セラミックス基板としては、例えば特公昭５７−１９５９９号公報には、ホウケイ酸ガラス５０重量％−アルミナ５０重量％のものが記載されている。この基板の誘電率εは５．５程度であり、また、その曲げ強さは２０ｋｇｆ／ｍｍ２程度である。
【０００３】
【発明が解決しようとする課題】
しかしながら、このような従来のガラス・セラミックス基板にあっては、曲げ強度が低く、かつ、その収縮率のばらつきが大きいという課題を有していた。
【０００４】
【課題解決のための知見】
そこで、本願発明者は、アルミナの焼結助剤に三酸化ビスマスを選ぶことによってアルミナの焼結性が高まり、さらに、アルミナの替わりにシリカコーティングされたアルミナ・シリカ複合粉末を用いることによってその焼結温度を１１００℃まで下げることが可能であるという知見を得た。
【０００５】
【発明の目的】
そこで、本発明は、曲げ強度が高く、かつ、誘電率が低い低温焼結セラミックス基板、および、その材料を提供することをその目的としている。また、本発明はそのセラミックス基板の製造方法を提供することをその目的としている。
【０００６】
【課題を解決するための手段】
請求項１に記載した発明は、アルミナ粉末をシリコン酸化物でコーティングすることによりアルミナ・シリカ複合粉末を作製し、このアルミナ・シリカ複合粉末と三酸化ビスマス粉末とを混合し、それを所定のグリーンシートに成型した後、１１００℃以下で焼結した低温焼結セラミックス基板の製造方法である。
【０００７】
請求項２に記載した発明は、上記シリコン酸化物の添加量は、低温焼結セラミックス基板材料全体の２〜１５重量％、三酸化ビスマスの添加量は、その１２〜２５重量％である請求項１に記載の低温焼結セラミックス基板の製造方法である。
【０００８】
請求項３に記載の発明は、上記アルミナ・シリカ複合粉末はゾルゲル法で作製した請求項１または請求項２に記載の低温焼結セラミックス基板の製造方法である。
【０００９】
請求項４に記載の発明は、上記アルミナ粉末の平均粒径は５．０μｍ以下である請求項１〜請求項３のいずれかに記載の低温焼結セラミックス基板の製造方法である。
【００１０】
請求項５に記載の発明は、シリコン酸化物が２〜１５重量％、ビスマス酸化物が１２〜２５重量％、残りがアルミナからなる低温焼結セラミックス基板用材料である。
【００１１】
請求項６に記載した発明は、シリコン酸化物を２〜１５重量％、ビスマス酸化物を１２〜２５重量％含み、残りがアルミナおよび不可避不純物からなる低温焼結セラミックス基板である。
【００１２】
請求項７に記載した発明は、曲げ強度が２５ｋｇｆ／ｍｍ２以上、かつ、誘電率が９．０以下である請求項６に記載の低温焼結セラミックス基板である。
【００１３】
請求項８の発明は、２〜１５重量％のシリカと、１２〜２５重量％の三酸化ビスマスとからなるマトリクス中に、平均粒径が０．１〜５．０μｍのアルミナ粒子が析出してなる低温焼結セラミックス基板である。
【００１４】
【作用】
本発明に係る低温焼結セラミックス基板の製造方法にあっては、例えば平均粒径が０．１〜５．０μｍのアルミナ粉末の表面をシリコン酸化物で被覆することにより、アルミナ・シリカ複合粉末を作製する。この複合粉末とビスマス酸化物の粉末とを混合し、さらに、溶剤、バインダー、分散剤等を加えて混練し、ペースト状とする。そして、このペーストを、例えばドクターブレード法でグリーンシートに成形した後、１１００℃以下の温度で焼結し、低温焼結セラミックス基板を得る。ここで、グリーンシート上に導体ペーストをスクリーン印刷した後、複数積層し、その積層体を焼成することによって多層配線基板を得ることができる。導体ペーストとしては例えば銀−パラジウムを用いることができる。
【００１５】
また、低温焼結セラミックス基板にあっては、含まれるシリコン酸化物が２重量％未満の場合は、誘電率が低くならない。シリコン酸化物の含有率が１５重量％を超えると、焼結温度が高くなる。さらに、ビスマス酸化物が１２重量％未満では同様に焼結温度が高くなり、２５重量％を超えると誘電率が上昇してしまうという不具合がある。さらに、アルミナの粉末の平均粒径が５．０μｍを超えると焼結温度が高くなる。
【００１６】
【実施例】
以下、本発明の実施例を説明する。表１に示す実施例１は、粒径が１．０μｍのＡｌ２Ｏ３粉末にＳｉＯ２層をコーティングしたＡｌ２Ｏ３−ＳｉＯ２複合粉末と、Ｂｉ２Ｏ３粉末とを、混合し、さらに、溶剤、バインダー、分散剤等のビヒクルと混練して、焼結したものである。ここで、Ａｌ２Ｏ３粉末にた対するＳｉＯ２コーティングについては、全てエチルシリケート、エタノールを含むアルコキシド溶液を用いたゾルゲル法により行っている。以下の組成についてそれぞれ曲げ強度、誘電率を測定した。
【００１７】
【表１】
ただし、誘電率は１ＭＨｚで室温にて測定した。曲げ強度は３点曲げ測定である。さらに、焼結温度は気孔率が５％以下となる焼成温度（全て大気中で６時間焼成）の最小値として規定した。なお、曲げ強度は基板としての実用上、２０ｋｇｆ／ｍｍ２以上は必要である。さらに、基板に要求される誘電率としてはアルミナの誘電率が９．２程度であるので、この値以下であることが望ましい。焼結温度は１１００℃を超えると配線（Ａｇ３０Ｐｄ）が溶融してしまい、銀−パラジウム合金等を内部配線として使用することができない。
【００１９】
実施例２としては、実施例１に示した組成（９ＳｉＯ２−１７Ｂｉ２Ｏ３−残りＡｌ２Ｏ３）において、ＳｉＯ２がコーティングされたＳｉＯ２−Ａｌ２Ｏ３複合粉末に代えて、Ａｌ２Ｏ３粉末、ＳｉＯ２粉末を用いた。この場合、焼結温度が１３００℃以上となり、銀−パラジウム合金等を内部配線とすることができない。
【００２０】
表２は、本発明の実施例３を示している。この実施例では、組成（９ＳｉＯ２−１７Ｂｉ２Ｏ３−残りＡｌ２Ｏ３）におけるＡｌ２Ｏ３粉末の粒径を変化させた場合の焼結温度との関係を示している。この実施例に示すように、平均粒径が５．０μｍを超えると焼結温度が上昇し、銀−パラジウム合金等を内部配線とすることができない。なお、この実施例に係るアルミナ粉末はこれにシリカを被覆した複合粉末である。
【００２１】
【表２】
【発明の効果】
本発明によれば、曲げ強度が高く、かつ、低誘電率の低温焼結セラミックス基板を得ることができる。[0001]
[Industrial applications]
The present invention relates to a ceramic substrate that can be sintered at a low temperature while increasing the bending strength and reducing the dielectric constant, a material for the ceramic substrate, and a method for manufacturing the ceramic substrate.
[0002]
[Prior art]
A glass / ceramic substrate (low-temperature fired substrate) is formed by simultaneously firing an inner conductor and a substrate. As the conductor for wiring, gold (Au), silver (Ag), silver-palladium alloy (Ag-Pd), copper (Cu), or the like is used. Therefore, the firing temperature is about 800 to 1100 ° C. As such a glass / ceramic substrate, for example, Japanese Patent Publication No. 57-19599 describes a substrate made of borosilicate glass 50% by weight-alumina 50% by weight. The dielectric constant ε of this substrate is about 5.5, and its bending strength is about 20 kgf / mm 2 .
[0003]
[Problems to be solved by the invention]
However, such a conventional glass / ceramic substrate has a problem that the bending strength is low and the variation in the shrinkage ratio is large.
[0004]
[Knowledge to solve the problem]
Therefore, the inventor of the present application chose bismuth trioxide as a sintering aid for alumina to increase the sinterability of alumina, and furthermore, to use alumina-silica composite powder coated with silica in place of alumina for sintering. We have found that it is possible to lower the sintering temperature to 1100 ° C.
[0005]
[Object of the invention]
Therefore, an object of the present invention is to provide a low-temperature sintered ceramic substrate having high bending strength and low dielectric constant, and a material thereof. Another object of the present invention is to provide a method for manufacturing the ceramic substrate.
[0006]
[Means for Solving the Problems]
According to the first aspect of the present invention, an alumina-silica composite powder is prepared by coating alumina powder with silicon oxide, and the alumina-silica composite powder and bismuth trioxide powder are mixed, and then mixed with a predetermined green color. This is a method for producing a low-temperature sintered ceramic substrate formed into a sheet and sintered at 1100 ° C. or lower.
[0007]
According to a second aspect of the present invention, the addition amount of the silicon oxide is 2 to 15% by weight of the entire low-temperature sintered ceramic substrate material, and the addition amount of bismuth trioxide is 12 to 25% by weight. 2. A method for producing a low-temperature sintered ceramic substrate according to item 1.
[0008]
A third aspect of the present invention is the method for producing a low-temperature sintered ceramic substrate according to the first or second aspect, wherein the alumina-silica composite powder is produced by a sol-gel method.
[0009]
The invention according to claim 4 is the method for producing a low-temperature sintered ceramic substrate according to any one of claims 1 to 3, wherein the average particle diameter of the alumina powder is 5.0 μm or less.
[0010]
The invention according to claim 5 is a low-temperature sintered ceramic substrate material comprising 2 to 15% by weight of silicon oxide, 12 to 25% by weight of bismuth oxide, and the remainder being alumina.
[0011]
The invention described in claim 6 is a low-temperature sintered ceramics substrate containing 2 to 15% by weight of silicon oxide, 12 to 25% by weight of bismuth oxide, and the remainder consisting of alumina and unavoidable impurities.
[0012]
The invention according to claim 7 is the low-temperature sintered ceramic substrate according to claim 6, having a bending strength of 25 kgf / mm 2 or more and a dielectric constant of 9.0 or less.
[0013]
The invention according to claim 8 is characterized in that alumina particles having an average particle diameter of 0.1 to 5.0 μm are precipitated in a matrix composed of 2 to 15% by weight of silica and 12 to 25% by weight of bismuth trioxide. Low-temperature sintered ceramic substrate.
[0014]
[Action]
In the method for producing a low-temperature sintered ceramic substrate according to the present invention, for example, the alumina-silica composite powder is coated by coating the surface of alumina powder having an average particle diameter of 0.1 to 5.0 μm with silicon oxide. Make it. This composite powder and bismuth oxide powder are mixed, and a solvent, a binder, a dispersant and the like are added and kneaded to form a paste. Then, the paste is formed into a green sheet by, for example, a doctor blade method, and then sintered at a temperature of 1100 ° C. or less, to obtain a low-temperature sintered ceramic substrate. Here, after the conductor paste is screen-printed on the green sheet, a plurality of the pastes are laminated, and the laminate is fired to obtain a multilayer wiring board. For example, silver-palladium can be used as the conductor paste.
[0015]
In the low-temperature sintered ceramic substrate, when the silicon oxide content is less than 2% by weight, the dielectric constant does not decrease. If the silicon oxide content exceeds 15% by weight, the sintering temperature will increase. Further, if the bismuth oxide content is less than 12% by weight, the sintering temperature is similarly increased, and if it exceeds 25% by weight, the dielectric constant increases. Further, when the average particle size of the alumina powder exceeds 5.0 μm, the sintering temperature increases.
[0016]
【Example】
Hereinafter, examples of the present invention will be described. Example 1 shown in Table 1 was prepared by mixing an Al2O3-SiO2 composite powder obtained by coating a SiO2 layer on an Al2O3 powder having a particle size of 1.0 m and a Bi2O3 powder, and further mixing a vehicle such as a solvent, a binder, and a dispersant. And sintered. Here, the SiO2 coating on the Al2O3 powder is all performed by a sol-gel method using an alkoxide solution containing ethyl silicate and ethanol. The bending strength and the dielectric constant of each of the following compositions were measured.
[0017]
[Table 1]
However, the dielectric constant was measured at room temperature at 1 MHz. The bending strength is a three-point bending measurement. Furthermore, the sintering temperature was defined as the minimum value of the sintering temperature at which the porosity was 5% or less (all sintering in air for 6 hours). The bending strength is required to be 20 kgf / mm 2 or more for practical use as a substrate. Further, as the dielectric constant required for the substrate, since the dielectric constant of alumina is about 9.2, it is preferable that the dielectric constant is lower than this value. If the sintering temperature exceeds 1100 ° C., the wiring (Ag30Pd) is melted, and a silver-palladium alloy or the like cannot be used as the internal wiring.
[0019]
In Example 2, Al2O3 powder and SiO2 powder were used instead of the SiO2-Al2O3 composite powder coated with SiO2 in the composition shown in Example 1 (9SiO2-17Bi2O3-remaining Al2O3). In this case, the sintering temperature becomes 1300 ° C. or higher, and a silver-palladium alloy or the like cannot be used as the internal wiring.
[0020]
Table 2 shows Example 3 of the present invention. This example shows the relationship with the sintering temperature when the particle size of the Al2O3 powder in the composition (9SiO2-17Bi2O3-remaining Al2O3) is changed. As shown in this example, when the average particle size exceeds 5.0 μm, the sintering temperature increases, and a silver-palladium alloy or the like cannot be used as the internal wiring. The alumina powder according to this example is a composite powder in which silica is coated.
[0021]
[Table 2]
【The invention's effect】
According to the present invention, a low-temperature sintered ceramic substrate having high bending strength and low dielectric constant can be obtained.
Claims (8)
このアルミナ・シリカ複合粉末と三酸化ビスマス粉末とを混合し、
それを所定のグリーンシートに成型した後、１１００℃以下で焼結した低温焼結セラミックス基板の製造方法。Alumina-silica composite powder is prepared by coating alumina powder with silicon oxide,
This alumina / silica composite powder and bismuth trioxide powder are mixed,
A method for manufacturing a low-temperature sintered ceramic substrate, which is formed into a predetermined green sheet and then sintered at 1100 ° C. or lower.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06568494A JP3560069B2 (en) | 1994-03-09 | 1994-03-09 | Low-temperature sintering ceramic substrate, its material, and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06568494A JP3560069B2 (en) | 1994-03-09 | 1994-03-09 | Low-temperature sintering ceramic substrate, its material, and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07249846A JPH07249846A (en) | 1995-09-26 |
| JP3560069B2 true JP3560069B2 (en) | 2004-09-02 |
Family
ID=13294090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP06568494A Expired - Fee Related JP3560069B2 (en) | 1994-03-09 | 1994-03-09 | Low-temperature sintering ceramic substrate, its material, and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3560069B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2015040949A1 (en) * | 2013-09-20 | 2017-03-02 | 株式会社村田製作所 | Alumina ceramic wiring board and manufacturing method thereof |
-
1994
- 1994-03-09 JP JP06568494A patent/JP3560069B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07249846A (en) | 1995-09-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3240271B2 (en) | Ceramic substrate | |
| US3977887A (en) | High dielectric constant ceramics which can be sintered at low temperatures | |
| EP0125730B1 (en) | Copper metallization for dielectric materials | |
| US5518969A (en) | Process for producing low shrink ceramic composition | |
| EP0428880B1 (en) | Ceramic compositions and their use | |
| JPH107435A (en) | Glass ceramic wiring substrate and its production | |
| JP3042441B2 (en) | Low temperature fired glass-ceramic substrate and its manufacturing method | |
| JP4228344B2 (en) | Glass powder, glass ceramic dielectric material, sintered body, and circuit member for high frequency | |
| JP4569000B2 (en) | Low-frequency sintered dielectric material for high frequency and its sintered body | |
| WO1989001461A1 (en) | Co-sinterable metal-ceramic packages and materials therefor | |
| JPH07242845A (en) | Electrically-conductive coating compound for electrode and its production | |
| JP3560069B2 (en) | Low-temperature sintering ceramic substrate, its material, and its manufacturing method | |
| JP2001010858A (en) | Composition for ceramic substrate and ceramic circuit part | |
| JP4852778B2 (en) | Composition for ceramic substrate and ceramic circuit component | |
| JPH1051088A (en) | Ceramic wiring board, and its manufacture | |
| JP4587758B2 (en) | Glass ceramic substrate | |
| WO2000076938A1 (en) | Glass ceramics composition and electronic parts and multilayered lc multiple component using the same | |
| JP4288656B2 (en) | Glass ceramic dielectric material | |
| JP2003095740A (en) | Glass ceramic dielectric material, and sintered compact | |
| JP3366479B2 (en) | Metallized composition and method for producing wiring board | |
| WO1993006053A1 (en) | Low dielectric constant substrate and method of making | |
| JP3359513B2 (en) | Glass ceramic sintered body and method for producing the same | |
| JP3030558B2 (en) | Dielectric porcelain material | |
| JP3236759B2 (en) | Insulating porcelain and multilayer wiring board using the same | |
| JPH02221162A (en) | Production of aluminum nitride-based sintered body |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20040506 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20040519 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080604 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090604 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100604 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100604 Year of fee payment: 6 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100604 Year of fee payment: 6 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110604 Year of fee payment: 7 |
|
| LAPS | Cancellation because of no payment of annual fees |