JP3537582B2 - Multifunctional sample surface analyzer - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multifunctional sample surface analyzer.

[0002]

2. Description of the Related Art Conventionally, ESD (electron impact desorption: El)
electron Stimulated Desert
ion) or SIMS (secondary ion mass spectrometer: Se)
condary IonMass Spectrome
An analytical method having a single function of (try) has been developed, and in particular, SIMS is widely used. In the case of ESD, it is difficult to analyze substances other than adsorbates (physical adsorption) and contaminants that are weakly bound in principle. SIMS can perform surface analysis or bulk analysis of a sample itself, but is insensitive to analysis of surface adsorbed molecules and contaminants.

[0003] In addition, ESD is effective in detecting extrinsic impurity contamination from the environment and history of the sample, but it is difficult to analyze intrinsic impurities in the original sample (sample itself). is there. This can be said to be an essential problem caused by using electrons having a small mass. In addition, this technique is characterized in that the sample itself is less damaged and the detection sensitivity of exogenous contaminants is high.

There are the following known examples.

[0005] Known examples of SIMS: edited by the 141st Committee of the Japan Society for the Promotion of Science, Micro-Analysis; 289 (1985) Known examples of SEM: edited by the 141st Committee of the Japan Society for the Promotion of Science, Microanalysis; Microbeam Analysis,
P. 187 (1985) Known examples of ESD: C.I. G. FIG. Panta and T.S.
E. FIG. Madai; Appl. Surface Sci,
7 (1981) 115 Also, as a conventional technology using electrons as an excitation source, EDX
(Energy dispersive X-ray analysis); elemental analysis by energy selection of specific X-rays generated by electron irradiation (light elements below Li cannot be analyzed); and AES (Auger electron spectroscopy); generated by electron irradiation Element analysis by measuring the energy of Auger electrons to be performed (light elements below He cannot be analyzed).

[0006]

Various types of microelements such as LSIs (large-scale integrated circuits) are composed of a stack of thin films, that is, a multi-layer film. Strongly dependent on type. Therefore, in the laminating step, it is important to sufficiently manage the properties of both the surface and the film itself, and evaluation means for them is indispensable.

[0007] However, at present, there is no analysis technique for distinguishing between the extrinsic surface adsorbed material of the material and the material itself and its surface and evaluating the material with high accuracy.

[0008] In view of the above situation, the present invention clearly identifies the analysis of the extrinsic surface adsorbed material of the material in the same region, the material itself, and the surface thereof, at the same time as observing a high-resolution image of an extremely small region of the material surface. It is an object of the present invention to provide a multifunctional surface sample analyzer that has an ultra-surface analysis method that can be separately analyzed.

[0009]

In order to achieve the above object, the present invention provides: (1) An electron gun for obtaining a primary electron beam for excitation in a multifunctional sample surface analyzer, and the primary gun from the electron gun. means for generating at least a condenser lens and the objective lens, by Rida' HanareTadashi ion and secondary electron beam irradiation <br/> to the sample of the primary electron beam for focusing the electron beam, the de HanareTadashi Ion and secondary electron beam
Again passed through a's, and means for guiding the upper part of this objective lens, allocates the arranged above the objective lens, and by utilizing the difference in polarity of guided de HanareTadashi ion and secondary electron beam to the upper comprising a deflection electrode, and the electron beam detecting system for detecting the secondary electron beam, and a desorption orthographic on detection system for detecting the elimination orthographic on.

[2] In the multifunctional sample surface analyzer according to the above [1], the deflection electrode is a deflection plate.

[3] In the multifunctional sample surface analyzer according to [1], the deflection electrode is a parallel plate mesh deflection electrode.

[4] In the multifunctional surface analyzer according to the above [1], the deflecting electrode is a deflecting plate with an opening.

[5] The multifunctional sample surface analyzer according to the above [1], wherein an ion / electron extraction electrode is arranged above the sample.

[6] In the multifunctional sample surface analyzer according to the above [5], the ion / electron extraction electrode is a mesh electrode.

[7] In the multifunctional sample surface analyzer according to the above [5], the ion / electron extraction electrode is a perforated plate electrode.

[8] In the multifunctional sample surface analyzer according to the above [5], the ion / electron extraction electrode is a hemispherical mesh electrode.

[9] In the multifunctional sample surface analyzer according to the above [5], [6], [7] or [8], the desorption is performed by applying a negative voltage to the ion / electron extraction electrode. The mode is set to the positive ion detection mode.

[10] In the multifunctional sample surface analyzer according to the above [5], [6], [7] or [8], a secondary voltage is applied by applying a positive voltage to the ion / electron extraction electrode. it is obtained so as to electron detection mode.

[11] The multifunctional sample surface analyzer according to the above [1], wherein an adsorbed substance on the sample surface is detected.

[12] The multifunctional sample surface analyzer according to the above [1], wherein constituent substances of the sample are detected.

[13] The multifunctional sample surface analyzer according to [1], wherein the measurement of the monoatomic layer of the sample is performed.

[14] In the multifunctional sample surface analyzer according to the above [1], a trace analysis is performed by integrating detection signals.

[15] The multifunctional sample surface analyzer according to [1], wherein the adsorbed material and the constituent material of the sample are detected separately by changing the current or energy of the primary electron beam. It is.

As described above, the positions of the secondary electron detector and the mass spectrometer are located above the objective lens, and secondary electrons and desorbed ions are passed through the objective lens again, and It is detected above the object lens. In this case, the working distance (working distance) can be reduced since the focal length of the objective lens can be shortened as compared with the case where the objective lens is arranged between the sample and the objective lens.
distance is shortened, the spot of the electron beam can be narrowed down, and the aberration can be reduced. Therefore, the resolution of the SEM can be increased. In addition, this arrangement allows secondary ions and desorbed ions to be extracted at a large solid angle in the direction of the primary electron beam where the emission distribution is high, so that the sensitivity is improved.

In fact, with such an arrangement, a remarkable improvement in the resolution of the secondary electron image and the ESD ion image was observed, and a sensitivity improvement of about 2.4 times was observed in the analysis of the minute area.

[0026]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a block diagram of a multifunctional sample surface analyzer according to a first embodiment of the present invention.

In this figure, 1 is an electron gun, 2 is an aperture,
3 is a condenser lens, 4 is a scanning deflecting electrode, 5 is a deflecting plate as a deflecting electrode, 6 is an objective lens, 7 is a sample, 8
Is a quadrupole mass spectrometer, 9 is a CPU (central processing unit), 1
0 is a scanning power supply, 11 is a CRT for an ion image, 12 is a post-acceleration electrode, 13 is a scintillator, 14 is a photomultiplier, 15 is a CRT for an electron image, 16 is a primary electron beam for excitation, 17 is a secondary electron, 18 Denotes a desorbed positive ion, and 19 denotes a sample stage.

In this embodiment, the irradiation of the primary electron beam 16 for excitation from the electron gun 1 emits desorbed positive ions 18 and secondary electrons 17 from the sample 7. Again passed through the objective lens 6 and its de HanareTadashi ions 18 and the secondary electrons 17
Arranged so that it leads to the top, and the desorption led to this top
Using the polarity difference between the positive ion 18 and the secondary electron beam
A deflecting plate 5 is disposed as a deflecting electrode. Sand
The desorbed positive ions 18 and secondary electrons 17 are
Up to a considerable height by the
You.

Therefore, the same positive and negative voltages are applied to the deflecting plate 5 to deflect the secondary electrons 17 and the desorbed positive ions 18 to the left and right, and the desorbed positive ions 18 are converted by the quadrupole mass spectrometer 8. It can be detected and processed by the CPU 9, and can be displayed on the ion image CRT 11 by scanning with the scanning power supply 10.

In this way, it is possible to simultaneously observe the elemental image of the same surface area and the secondary electron image (SEM image),
Analysis and observation can be performed simultaneously. First, a secondary electron image (SEM image) is observed, a desired analysis place is selected, an electron beam is irradiated to the desired place, and a mass spectrum mode measurement is performed. Can also be implemented.

On the other hand, secondary electrons 17 emitted from the sample 7
Is detected by the photomultiplier 14 through the post-acceleration electrode 12 and the scintillator 13, and can be displayed on the electronic image CRT 15 by scanning with the scanning power supply 10.
Then, it is introduced into a secondary electron detection system to perform analysis and observation.

FIG. 2 is a view showing a modification in which a deflection electrode 5a made of a parallel plate mesh is used in place of the deflection plate 5 as the deflection electrode in FIG.

The operation will be described below.

The irradiation of the primary electron beam 16 for excitation allows
The desorbed positive ions 18 and secondary electrons 17 emitted from the surface of the sample 7 are passed through the objective lens 6 again , guided to the upper part of the objective lens 6 , and supplied to the deflection electrode 5a made of a parallel plate mesh provided therewith by the positive and negative electrodes. The same voltage is applied to deflect the secondary electrons 17 and the desorbed positive ions 18 to the left and right.
Is introduced into the quadrupole mass spectrometer 8, and the secondary electrons 17 are introduced into the secondary electron detection system (the latter-stage acceleration electrode 12, the scintillator 13, etc.), and analysis and observation are performed.

As the deflection electrode 5a made of a parallel plate mesh,
100 mesh with high transmittance was adopted. That is, the parallel-plate mesh deflecting electrode 5a has a mesh of 100 and a high transmittance of 80 to 90%.

FIG. 3 shows an electron and electron beam instead of the deflection plate 5 as the deflection electrode in FIG. 1 and the deflection electrode 5a made of a parallel plate mesh in FIG.
FIG. 4 is a diagram showing a modification in which a deflection electrode 5b having an ion passage port 5-1 is used, and FIG.
FIG. 3 is a diagram illustrating a potential distribution of a deflection electrode having a passage opening.

Here, as shown in FIG. 4, a voltage is applied so that the central portion of the deflection electrode 5b becomes zero potential so that the primary electron beam 16 for excitation is not deflected.

That is, the method of applying a voltage to the deflection electrode 5b is the same for all three deformed deflection electrodes, and positive and negative voltages are applied so that the absolute values are equal. Thereby, the center of the optical axis was considered to have zero potential. This is to eliminate the influence on the primary electron beam 16 for excitation.

FIG. 5 shows an ion / electron extraction mesh electrode 20 as an ion / electron extraction electrode above the sample 7.
It is a figure showing the example which has.

FIG. 6 is a diagram showing an example in which a perforated plate electrode 20a is used as the ion / electron extraction electrode.

FIG. 7 is a diagram showing an example in which a hemispherical mesh electrode 20b is used as the ion / electron extraction electrode.

These ion / electron extraction mesh electrodes 20 (perforated plate electrode 20a, hemispherical mesh electrode 2
0b), a variable DC power supply 21 for the mesh electrode is connected, a voltage _Vm is applied to the ion / electron extraction mesh electrode 20, and a variable DC power supply 22 for adjusting the sample potential is provided between the sample table 19 and the ground. The connection is made, and the voltage V _S is applied to the sample stage 19.

[0044] By varying these voltage V _m and the voltage V _S, it is possible to change the detection mode of the apparatus.

(1) Desorption Positive Ion Detection Mode The voltages V _S and V _m are changed under the conditions of each electrode potential V _S <0, V _m <0, | V _S | <| V _m |.

Under these conditions, a negative electric field is applied to the surface of the sample (positive ion extraction electric field), so that the desorbed positive ions can be extracted with high efficiency. In other words, ions are collected at the central portion by the extraction electric field (formation of a kind of lens), and the extraction efficiency of the desorbed positive ions becomes high because the probability of neutralization is reduced.

Therefore, the ESDMS (Electro
n Stimulated Desorption M
(Aspect Spectrometry) is improved.

(2) Simultaneous ESDMS-SEM Measurement Mode With each electrode potential V _S = V _m = 0, the secondary electrons 17 and the desorbed positive ions 18 which are secondarily emitted by irradiation with the primary electron beam 16 for excitation are irradiated. While maintaining its initial energy, is guided to a secondary electron detection system and a mass spectrometry system, respectively, and used for observation and analysis. As an effect, observation of an extremely small area and elemental analysis of the same area can be simultaneously performed.

(3) SEM observation mode Assuming that each electrode potential is 0 <V _S <V _m , (1) By finely adjusting V _S and V _m , the potential distribution on the sample surface can be observed. This is because if there is a minute potential distribution on the sample surface,
Due to the change in the initial energy of secondary electrons.
(2) The extraction efficiency of secondary electrons is improved by the electric field.
As a result, the image quality of the SEM image is significantly improved.

Hereinafter, the experimental results will be described.

(1) Detection of Adsorbed Substance on Sample Surface The ESD phenomenon itself has been known for a long time, and is a phenomenon in which an adsorbed substance bonded to the surface of a sample with a weak force is desorbed by electron irradiation. In this embodiment, the ESDMS
The measurement showed that contaminants and adsorbed substances on the sample surface could be effectively detected.

For example, FIG. 8 is a diagram showing an EDMS spectrum of the surface of a silicon wafer as a sample.
FIG. 8A shows the spectrum immediately after opening, and FIG. 8B shows the spectrum 3 months after opening. In these figures, the vertical axis indicates ionic strength (CPS), and the horizontal axis indicates mass number (m / z).

As shown in FIG. 8A, immediately after opening, H
[M / z (mass number): 1], O [16], H ₂ O [1
8] and the like, but as shown in FIG. 8 (b), contamination progressed three months after opening, and many adsorbed substances were observed.

Such a change can be clearly seen in ESDMS, but cannot be distinguished in SIMS.

FIG. 9 is a diagram showing the SIMS spectra thereof, wherein FIG. 9 (a) shows the spectrum immediately after opening and FIG. 9 (b) shows the spectrum 3 months after opening. As is clear from these figures, each SIMS immediately after opening and 3 months after opening.
The difference cannot be confirmed from the spectrum.

Since SIMS hits the sample surface with ions that are much heavier than electrons, the sample surface material is easily broken, and the spectrum is usually noisy in this way. Is impossible.

(2) Detection of Substrate Constituent Substances Conventionally, ESD has been used mainly for analysis of adsorbed substances, usually using an electron beam of several to several tens of eV. Here, when an electron beam of 3 keV was used, it was confirmed that not only the adsorbed material on the sample surface but also the substrate constituent material was desorbed.

FIGS. 10A and 10B show various spectra on the surface of a copper plate as a sample. FIG. 10A shows an ESDMS spectrum, FIG. 10B shows a SIMS spectrum, and FIG.
Is the ESDMS spectrum (electron current:> a).

As is clear from these figures, FIG.
In the SIMS spectrum shown in (b), the Cu ⁺ ion (6
3, 65) is detected but is buried in many other fragment peaks. In the EDMS spectrum, when a portion having a weak beam luminance in the electron beam spot is used, only the adsorbed material on the sample surface is detected as shown in FIG. 10A. As shown in FIG. 10 (c), Cu ⁺ ions were detected in addition to the sample surface adsorbate.

Therefore, similarly, the irradiation area of the electron beam is adjusted, and the silicon wafer, the gallium arsenide wafer,
FIG. 11 shows the result of the EDMS measurement performed on the silver plate. That is, FIG. 11A shows the ESD of a silicon wafer.
MS spectrum, FIG. 11B shows the ESDMS spectrum of a gallium arsenide wafer, and FIG. 11C shows the ESDM of a silver plate.
It is an S spectrum.

As shown in FIG. 11A, in the EDMS spectrum of the silicon wafer, the Si ⁺ (28, 29,
As shown in FIG. 11B, Ga ⁺ (69,7) was observed in the ESDMS spectrum of the gallium arsenide wafer.
1) As shown in FIG. 11C, Ag ⁺ (107, 109) could be detected in the ESDMS spectrum of the silver plate.

(3) The analysis of an ultra-thin layer of a time-dependent monolayer (monoatomic layer) is particularly important in recent years as devices become more and more miniaturized. Therefore, it is impossible. However, with EDMS, such ultra-thin layers can be measured.

As shown in FIG. 12, GaAs (100)
Is a sample in which Ga layers 31 and As layers 32 are alternately stacked one by one. FIG. 13 shows a change in ion intensity when ions (O ₂ ⁺ ) or an electron beam are continuously irradiated. Here, FIG. 13A shows a change in EDMS ion intensity, and FIG. 13B shows a change in SIMS ion intensity. In these figures, the vertical axis represents relative ionic strength and the horizontal axis represents time (minutes). In both cases, Ga ⁺ and As ^{+ of the} atoms constituting the substrate are used.
In addition, H ⁺ , O ⁺ , F ⁺ , Na adsorbed on the substrate
⁺ Etc. are observed.

In the case of the ion irradiation (60 minutes) shown in FIG. 13B, H ⁺ , F ⁺ , Na ^+, etc. of the adsorbed material are rapidly reduced by ion sputtering, but Ga ⁺ , As ^{+ of the} substrate element are used.
Indicates a constant intensity. This is because SIMS detects ions not only from the outermost surface layer but also from lower layers.

On the other hand, in the case of the electron irradiation shown in FIG.
Despite the continuous irradiation for a long time of 1,000 minutes (about 16.7 hours), all the adsorbed substances have almost constant intensity, but Ga ⁺ gradually decreases. This indicates a state in which Ga atoms are gradually desorbed from the outermost Ga monoatomic layer by electron irradiation and are reduced. In ESDMS,
Since it is considered that signals from the first and second monoatomic layers on the outermost surface are detected, it can be said that changes in the depth direction can be almost ignored even for long-time continuous irradiation.

FIG. 14 is a diagram showing the time change of the B ion intensity obtained by the EDMS measurement for the sample in which B is ion-implanted into Si. FIG. 14 (a) is a signal obtained by integrating the B ion signal for 5 seconds, and the intensity is small at any time, and the intensity at each time of A, B, C, D, E, F and G fluctuates greatly. I do. In contrast, FIG.
(B) shows the case of integration for 100 seconds. In addition to the fact that the intensity has increased by about two digits, the fluctuation of the intensity has become smaller as in (a), (b), (c), and (d), and a stable signal has been obtained. .

The effect of changing the current is illustrated in FIG. 10 as described above. That is, when a portion having a low luminance in the electron beam irradiation area is used, as shown in FIG. 10A, a sample surface adsorbed substance is mainly detected, but when a strong portion is used, FIG. As shown, Cu ^+, which is a substrate constituent atom, was detected in addition to the surface adsorbate. However, this is probably due to the fact that the sensitivity was increased simply by using the strong part of the beam. That is, if the beam is weak, ions of low intensity are not detected.

When the energy is changed, when the energy of the electrons is small, the state changes from the adsorbed state to the desorbed state with the electron excitation of the valence band, and the adsorbed substance leaves the surface (MGR). model). On the other hand, when the energy of keV or more is used, the inner shell electrons of the atoms can also be excited, and accordingly, Auger transition occurs between or within the atoms, and electrons are released to form a plurality of positive ions on the surface. It is considered that the particles are detached from the surface by the repulsive force (KF model).

That is, the characteristic feature of this ESDMS is that the conventional ESD (electron stimulated desorption) phenomenon usually has
Although the adsorbate on the sample surface was detected with a low energy of eV or less, the use of an electron beam with a high energy enough to excite inner-shell electrons makes it possible to desorb and detect substrate constituent elements. it can.

Therefore, it is conceivable that if the energy of electrons is changed, that is, if the energy is low (several tens to several hundreds eV), only the adsorbed material on the sample surface is detected, and if the energy is high (up to keV), the constituent elements of the substrate can be detected. Can be detected, and such a sample surface analyzer does not exist in the conventional analysis technology, and its effect is remarkable.

From the above results, the features of the ESDMS spectrum are as follows.

(A) Elemental analysis of the adsorbate on the outermost surface of the sample and the monoatomic layer of the substrate is possible.

(B) Micro-analysis is possible by integrating signals.

(C) The spectrum is essentially noiseless and high sensitivity can be achieved.

(D) By changing the current or energy of the electron beam, the adsorbed substance and the substrate constituent substance can be detected separately.

And so on.

The present invention is not limited to the above embodiment, but various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention.

[0078]

As described above in detail, according to the present invention, (1) the positions of the secondary electron detection system and the mass spectrometry system are arranged above the objective lens, and the secondary electrons and the desorption positive Since the ions are detected above the objective lens, the focal length of the objective lens can be reduced as compared with the case where the ions are detected between the sample and the objective lens.
Tance) is shortened, the spot of the electron beam can be narrowed down, and the aberration can be reduced.

Therefore, the resolution of the SEM can be increased. In addition, this arrangement allows secondary ions and desorbed ions to be extracted at a large solid angle in the direction of the primary electron beam where the emission distribution is high, so that the sensitivity is improved.

In fact, with such an arrangement, a remarkable improvement in the resolution of the secondary electron beam and desorbed ion images was observed, and a sensitivity improvement of about 2.4 times was observed in the micro area analysis. .

(2) Morphological observation and elemental analysis of the same region can be performed simultaneously.

(3) Simultaneous observation of a high-resolution surface shape image by SEM and an elemental image in the same field of view becomes possible.
In addition, as shown in the related art, the element image distribution of all elements including H, which has been considered difficult in the related art, can be observed in the same visual field in combination with the SEM image observation.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a multifunctional sample surface analyzer according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a modification in which a parallel plate mesh deflection electrode is used instead of the deflection plate as the deflection electrode in FIG.

FIG. 3 is a diagram showing a modification in which a deflection electrode having an electron and ion passage is used instead of the deflection plate of FIG. 1 or the deflection electrode made of a parallel plate mesh of FIG. 2;

FIG. 4 is a diagram showing a potential distribution of a deflection electrode having an electron / ion passage of FIG. 3;

FIG. 5 is a diagram illustrating an example in which an ion / electron extraction mesh electrode as an ion / electron extraction electrode is provided above a sample of the multifunctional sample surface analyzer according to the first embodiment of the present invention.

FIG. 6 is a diagram showing an example in which a perforated plate-like electrode is used as an ion / electron extraction electrode of the multifunctional sample surface analyzer according to the first embodiment of the present invention.

FIG. 7 is a diagram showing an example in which a hemispherical mesh electrode is used as an ion / electron extraction electrode in the multifunctional sample sample surface analyzer according to the first embodiment of the present invention.

FIG. 8 is a diagram showing an EDMS spectrum of a surface of a silicon wafer as a sample showing an example of the present invention.

FIG. 9 is a diagram showing a SIMS spectrum of a sample showing an example of the present invention.

FIG. 10 is a diagram showing various spectra on the surface of a copper plate as a sample showing an example of the present invention.

FIG. 11 is a diagram showing an EDMS measurement result of a silicon wafer, a gallium arsenide wafer, and a silver plate showing the example of the present invention.

FIG. 12 is a schematic view of a GaAs sample showing an example of the present invention.

FIG. 13 is a diagram showing a change in ion intensity when a GaAs sample according to an embodiment of the present invention is continuously irradiated with ions (O ₂ ⁺ ) or an electron beam.

FIG. 14 is a diagram showing a time change of the B ion intensity obtained by the EDMS measurement with respect to the sample in which B is ion-implanted in Si according to the example of the present invention.

[Explanation of symbols]

1 electron gun 2 Aperture 3 Condenser lens 4 Deflection electrode for scanning 5 Deflection plate as deflection electrode 5a deflection electrode made of parallel plate mesh 5b Deflection electrode having electron ion passage 5-1 Electron / ion passage 6 Objective lens 7 samples 8 Quadrupole mass spectrometer 9 CPU (central processing unit) 10. Scanning power supply 11 CRT for ion images 12. Post-acceleration electrode 13 Scintillator 14 Photo Multiplier 15 Electronic image CRT 16 Primary electron beam for excitation 17 Secondary electrons 18 Desorbed positive ions 19 Sample table 20 Ion / electron extraction mesh electrode 20a perforated plate electrode 20b hemispherical mesh electrode 21 Variable DC power supply for mesh electrode 22 Variable DC power supply for sample potential adjustment 31 Ga layer 32 As layer

Continuation of the front page (58) Field surveyed (Int. Cl. ⁷ , DB name) G01N 23/00-23/227 G01N 27/62-27/70 H01J 49/00-49/48 JICST file (JOIS)

Claims (15)

(57) [Claims] (A) an electron gun for obtaining a primary electron beam for excitation; (b) at least a condenser lens and an objective lens for focusing the primary electron beam from the electron gun; and (c) the primary electron. Desorption is positive by irradiating the sample with the beam
Means for generating an ion and secondary electron beams, the objective les (d) is the de-HanareTadashi ion and secondary electron beam
Again passed through a lens, by utilizing a means for guiding the upper portion of the objective lens, the polarity difference of (e) wherein arranged above the objective lens, and directed to the upper a de HanareTadashi ion and secondary electron beam a deflection electrode for distributing Te, (f) the electron beam detecting system for detecting a secondary electron beam, (g) multi-function sample surface; and a desorption orthographic on detection system wherein detecting the desorbed orthographic oN Analysis equipment. 2. The multifunctional sample surface analyzer according to claim 1, wherein said deflection electrode is a deflection plate. 3. The multifunctional sample surface analyzer according to claim 1, wherein the deflection electrode is a parallel plate mesh deflection electrode. 4. The multifunctional sample surface analyzer according to claim 1, wherein said deflection electrode is a deflection plate with an opening. 5. The multifunctional sample surface analyzer according to claim 1, wherein an ion / electron extraction electrode is arranged above the sample. 6. The multifunctional sample surface analyzer according to claim 5, wherein said ion / electron extraction electrode is a mesh electrode. 7. The multifunctional sample surface analyzer according to claim 5, wherein said ion / electron extraction electrode is a perforated plate electrode. 8. The multifunctional sample surface analyzer according to claim 5, wherein said ion / electron extraction electrode is a hemispherical mesh electrode. 9. The multifunctional sample surface analyzer according to claim 5,6, 7 or 8, wherein a negative voltage is applied to the ion / electron extraction electrode to enter the desorption / positive ion detection mode. Functional sample surface analyzer. 10. A multi-function sample surface analyzer according to claim 5, 6, 7 or 8, wherein, by applying a positive voltage to said ion electron extraction electrode, the secondary electron detector <br/> mode in to become multifunctional sample surface analyzer. 11. The multifunctional sample surface analyzer according to claim 1, wherein an adsorbed substance on the sample surface is detected. 12. The multifunctional sample surface analyzer according to claim 1, wherein a constituent substance of the sample is detected. 13. The multifunctional sample surface analyzer according to claim 1, wherein the measurement of the monoatomic layer of the sample is performed. 14. The multifunctional sample surface analyzer according to claim 1, wherein a microanalysis is performed by integrating detection signals. 15. The multifunctional sample surface analyzer according to claim 1, wherein a current and an energy of the primary electron beam are changed to distinguish and detect an adsorbed substance and a constituent material of the sample. .