JP3526380B2 - Chip component type LED and method of manufacturing the same - Google Patents
Chip component type LED and method of manufacturing the sameInfo
- Publication number
- JP3526380B2 JP3526380B2 JP33236096A JP33236096A JP3526380B2 JP 3526380 B2 JP3526380 B2 JP 3526380B2 JP 33236096 A JP33236096 A JP 33236096A JP 33236096 A JP33236096 A JP 33236096A JP 3526380 B2 JP3526380 B2 JP 3526380B2
- Authority
- JP
- Japan
- Prior art keywords
- metal film
- anode
- cathode
- chip
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Die Bonding (AREA)
- Led Device Packages (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、各種表示パネル
や、ＬＣＤのバックライト、照光スイッチ等の光源とし
て利用される表面実装用のチップ部品型ＬＥＤに係り、
より詳細には、薄型化、低コスト化を図ったチップ部品
型ＬＥＤ及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface mount chip part type LED used as a light source for various display panels, LCD backlights, illumination switches and the like,
More specifically, the present invention relates to a chip component type LED and a method for manufacturing the same, which are designed to be thin and low cost.
【０００２】[0002]
【従来の技術】従来のチップ部品型ＬＥＤの構造例を図
５及び図６に示す。2. Description of the Related Art An example of the structure of a conventional chip component type LED is shown in FIGS.
【０００３】図５に示すチップ部品型ＬＥＤは、カソー
ド側リードフレーム６０にＡｇペーストでＬＥＤチップ
６１を実装し、このＬＥＤチップ６１とアノード側リー
ドフレーム６２とを金属細線６３で接続し、さらに全体
を透光性樹脂６４で封止した構造となっている。In the chip part type LED shown in FIG. 5, an LED chip 61 is mounted on the cathode side lead frame 60 by Ag paste, and the LED chip 61 and the anode side lead frame 62 are connected by a thin metal wire 63, and the whole structure is further improved. Has a structure in which a transparent resin 64 is sealed.
【０００４】また、図６に示すチップ部品型ＬＥＤは、
基板７０の表面に形成された一方の配線パターン７４上
にＬＥＤチップ７１を接着し、基板７０の表面に形成さ
れた他方の配線パターン７５とＬＥＤチップ７１とを金
属細線７２で接続し、さらにＬＥＤチップ７１及び金属
細線７２を含む基板７０の表面全体を透光性樹脂７３で
封止した構造となっている。Further, the chip part type LED shown in FIG.
The LED chip 71 is adhered onto one wiring pattern 74 formed on the surface of the substrate 70, and the other wiring pattern 75 formed on the surface of the substrate 70 and the LED chip 71 are connected by a thin metal wire 72. It has a structure in which the entire surface of the substrate 70 including the chip 71 and the thin metal wires 72 is sealed with a translucent resin 73.
【０００５】いずれのチップ部品型ＬＥＤも、リードフ
レーム６０，６２と基板７０の配線パターン７４，７５
という違いはあるものの、ＬＥＤチップ６１，７１と他
方の電極（アノード側リードフレーム６２，配線パター
ン７５）とを金属細線６３，７２で接続している点は共
通している。また、金属細線６３，７２を保護するた
め、金属細線６３，７２の高さを考慮して、十分な余裕
をとった厚みに樹脂封止している。In any of the chip component type LEDs, the lead patterns 60 and 62 and the wiring patterns 74 and 75 of the substrate 70 are used.
However, there is a common point that the LED chips 61, 71 and the other electrode (anode side lead frame 62, wiring pattern 75) are connected by thin metal wires 63, 72. Further, in order to protect the fine metal wires 63, 72, the height of the fine metal wires 63, 72 is taken into consideration and the resin is sealed in a thickness with a sufficient margin.
【０００６】因みに、図６に示すチップ部品型ＬＥＤの
実際の寸法例を図７に示す。ここで使用しているＬＥＤ
チップの寸法は、０．３×０．３×０．３（ｍｍ）であ
る。チップ部品型ＬＥＤとしての全体の寸法は、１．６
×０．８×０．８（ｍｍ）となる。つまり、厚みが０．
８（ｍｍ）となっている。Incidentally, FIG. 7 shows an example of actual dimensions of the chip part type LED shown in FIG. LED used here
The size of the chip is 0.3 × 0.3 × 0.3 (mm). The overall size of a chip component type LED is 1.6
It becomes x0.8x0.8 (mm). That is, the thickness is 0.
It is 8 (mm).
【０００７】[0007]
【発明が解決しようとする課題】上記した従来のチップ
部品型ＬＥＤでは、ＬＥＤチップ６１，７１と他方の電
極（アノード側リードフレーム６２，配線パターン７
５）とを接続するのに金属細線（通常はＡｕ線）６３，
７２を用いているが、この金属細線６３，７２は、通常
１０〜４０μｍと細いために外的応力に弱く、従って樹
脂にて封止する必要がある。In the above-mentioned conventional chip component type LED, the LED chips 61, 71 and the other electrode (anode side lead frame 62, wiring pattern 7).
5) To connect with the metal thin wire (usually Au wire) 63,
Although 72 is used, the thin metal wires 63 and 72 are usually as thin as 10 to 40 [mu] m and thus are weak against external stress, and therefore need to be sealed with resin.
【０００８】この場合、ＬＥＤチップ６１，７１の天面
（アノード面）から金属細線６３，７２をループ状に引
き出して他方の電極（アノード側リードフレーム６２，
配線パターン７５）まで配線しているため、ＬＥＤチッ
プ６１，７１の天面（アノード面）から金属細線６３，
７２の頂点まで１００〜２００μｍの高さが必要とな
る。そのため、封止樹脂（透光性樹脂）６４，７３の厚
みとしては、最低限でも金属細線６３，７２の頂点まで
の高さに相当する厚みを必要とする。通常は、この厚み
に一定の厚みを加えて金属細線６３，７２の保護を図っ
ている。In this case, the thin metal wires 63 and 72 are drawn out in a loop from the top surface (anode surface) of the LED chips 61 and 71 and the other electrode (anode side lead frame 62,
Since the wiring pattern 75) is wired, from the top surface (anode surface) of the LED chips 61, 71 to the metal thin wire 63,
A height of 100 to 200 μm is required up to the apex of 72. Therefore, as the thickness of the sealing resin (translucent resin) 64, 73, at least a thickness corresponding to the height to the apex of the thin metal wires 63, 72 is required. Usually, a certain thickness is added to this thickness to protect the thin metal wires 63, 72.
【０００９】このように、従来のチップ部品型ＬＥＤで
は、その構造上、封止樹脂（透光性樹脂）６４，７３の
厚みが厚くなることから、近年の各種機器の薄型化、小
型化に十分に対応できないといった問題があった。As described above, in the conventional chip part type LED, the thickness of the sealing resin (translucent resin) 64, 73 becomes thicker due to its structure, which makes it possible to reduce the thickness and size of various devices in recent years. There was a problem that we could not respond sufficiently.
【００１０】また、従来のチップ部品型ＬＥＤでは、金
属細線６３，７２の周囲を透光性樹脂６４，７３によっ
て封止しているが、はんだ付け時の外的応力により、若
しくは基板への取り付け後の基板の反り等の外的応力に
よって、金属細線６３，７２が断線することがあった。
特に、近年の各種機器の薄型化、小型化により小さな部
品が求められているが、封止樹脂部分を小さく（特に薄
く）しすぎると、金属細線６３，７２の断線が頻発して
信頼性が低下してしまうといった問題を生じる。In the conventional chip part type LED, the thin metal wires 63 and 72 are sealed with the translucent resins 64 and 73. However, external stress at the time of soldering or attachment to the substrate is required. The thin metal wires 63 and 72 may be broken due to external stress such as warp of the substrate later.
In particular, small parts have been required due to the thinning and miniaturization of various devices in recent years, but if the sealing resin part is made too small (particularly thin), the metal thin wires 63, 72 are frequently broken and the reliability is improved. It causes a problem that it decreases.
【００１１】本発明はこのような問題点を解決すべく創
案されたもので、その目的は、部品としての信頼性を低
下させることなく、各種機器の薄型化、小型化に十分に
対応できるチップ部品型ＬＥＤ及びその製造方法を提供
することにある。The present invention was devised to solve such a problem, and an object thereof is a chip which can sufficiently cope with thinning and miniaturization of various devices without lowering reliability as a component. An object is to provide a component type LED and a manufacturing method thereof.
【００１２】[0012]
【課題を解決するための手段】上記課題を解決するた
め、本発明の請求項１記載のチップ部品型ＬＥＤは、所
定の間隔を存して同一平面上に配置されたカソード側金
属フィルムとアノード側金属フィルムとを跨ぐようにし
てＬＥＤチップが配置されるとともに、このＬＥＤチッ
プは、カソード面とアノード面とがそれぞれの金属フィ
ルム上に位置するように横方向に寝かせて配置され、前
記カソード面とこれに対応するカソード側金属フィルム
及び前記アノード面とこれに対応するアノード側金属フ
ィルムとがそれぞれ導電性部材によって直接接続され、
これらＬＥＤチップと導電性部材とが前記金属フィルム
上で透光性樹脂によって封止されていることにより、前
記ＬＥＤチップが前記金属フィルムの１層のみに実装さ
れた構造としたものである。In order to solve the above problems, a chip component type LED according to claim 1 of the present invention is a cathode side metal film and an anode which are arranged on the same plane with a predetermined interval. The LED chip is arranged so as to straddle the side metal film, and the LED chip is arranged laterally so that the cathode surface and the anode surface are located on the respective metal films. And the cathode side metal film corresponding to this and the anode surface and the anode side metal film corresponding thereto are directly connected by conductive members, respectively.
Since the LED chip and the conductive member are sealed with a translucent resin on the metal film ,
The LED chip is mounted on only one layer of the metal film.
It has a special structure .
【００１３】また、本発明の請求項２記載のチップ部品
型ＬＥＤは、請求項１記載のものにおいて、前記導電性
部材をはんだ又は導電性ペーストとしたものである。The chip component type LED according to a second aspect of the present invention is the LED according to the first aspect, wherein the conductive member is solder or a conductive paste.
【００１４】また、本発明の請求項３記載のチップ部品
型ＬＥＤは、請求項１又は２記載のものにおいて、前記
ＬＥＤチップは、前記カソード側金属フィルムと前記ア
ノード側金属フィルムとを跨ぐようにして配置された絶
縁フィルムの上に配置されているものである。Further, a chip component type LED according to a third aspect of the present invention is the LED according to the first or second aspect, wherein the LED chip straddles the cathode side metal film and the anode side metal film. It is arranged on the insulating film arranged as above.
【００１５】また、本発明の請求項４記載のチップ部品
型ＬＥＤの製造方法は、金属フィルムを所定の間隔でエ
ッチング処理することにより、所定の間隔を存したカソ
ード側金属フィルムとアノード側金属フィルムとを形成
し、このカソード側金属フィルムとアノード側金属フィ
ルムとを跨ぐようにして絶縁フィルムを形成し、この絶
縁フィルム上に、ＬＥＤチップをそのカソード面とアノ
ード面とがそれぞれの金属フィルム上に位置するように
横方向に寝かせて配置し、前記カソード面とこれに対応
する金属フィルム及び前記アノード面とこれに対応する
金属フィルムとをそれぞれはんだ又は導電性ペーストに
よって直接接続し、これらＬＥＤチップと導電性部材と
を透光性樹脂によって封止することにより、前記ＬＥＤ
チップを前記金属フィルムの１層のみに実装したもので
ある。According to a fourth aspect of the present invention, there is provided a method of manufacturing a chip part type LED, wherein a metal film is etched at a predetermined interval to form a cathode side metal film and an anode side metal film having a predetermined interval. Is formed, and an insulating film is formed so as to straddle the metal film on the cathode side and the metal film on the anode side. On this insulating film, the LED chip has its cathode surface and anode surface on the respective metal films. The cathode surface and the corresponding metal film and the anode surface and the corresponding metal film are directly connected to each other by solder or a conductive paste, respectively, so that the LED chip and the LED chip are connected to each other. The LED is obtained by sealing the conductive member with a light-transmissive resin.
The chip is mounted on only one layer of the metal film .
【００１６】
〔発明の詳細な説明〕
以下、本発明の実施の形態について図面を参照して説明
する。DETAILED DESCRIPTION OF THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the drawings.
【００１７】図１は、本発明のチップ部品型ＬＥＤの構
造を示す正面図、図２は同平面図である。FIG. 1 is a front view showing the structure of a chip part type LED of the present invention, and FIG. 2 is a plan view of the same.
【００１８】このチップ部品型ＬＥＤは、所定の間隔Ｌ
１を存して同一平面上にカソード側金属フィルム１とア
ノード側金属フィルム２とが配置され、このカソード側
金属フィルム１とアノード側金属フィルム２とを跨ぐよ
うにして絶縁フィルム３が配置され、この絶縁フィルム
３上に、ＬＥＤチップ４が配置されている。このＬＥＤ
チップ４は、カソード面４ａとアノード面４ｂとがそれ
ぞれの金属フィルム１，２上に位置するように横方向に
寝かせて配置されている。This chip part type LED has a predetermined interval L.
1, the cathode side metal film 1 and the anode side metal film 2 are arranged on the same plane, and the insulating film 3 is arranged so as to straddle the cathode side metal film 1 and the anode side metal film 2. The LED chip 4 is arranged on the insulating film 3. This LED
The chip 4 is arranged laterally so that the cathode surface 4a and the anode surface 4b are located on the respective metal films 1 and 2.
【００１９】そして、カソード面４ａとこれに対応する
カソード側金属フィルム１、及びアノード面４ｂとこれ
に対応するアノード側金属フィルム２とが、それぞれは
んだ又は導電性ペースト等の導電性部材５によって直接
接続され、これらＬＥＤチップ４と導電性部材５とが、
カソード側金属フィルム１及びアノード側金属フィルム
２上において透光性樹脂６によって封止された構造とな
っている。すなわち、本発明のチップ部品型ＬＥＤは、
ＬＥＤチップ４をカソード側金属フィルム１及びアノー
ド側金属フィルム２の１層のみに実装した構造となって
いる。 The cathode surface 4a and the cathode-side metal film 1 corresponding thereto, and the anode surface 4b and the anode-side metal film 2 corresponding thereto are directly connected by a conductive member 5 such as solder or a conductive paste. The LED chip 4 and the conductive member 5 are connected,
The cathode-side metal film 1 and the anode-side metal film 2 are sealed with a light-transmissive resin 6. That is, the chip component type LED of the present invention is
LED chip 4 on the cathode side metal film 1 and
The structure is mounted on only one layer of the metal film 2
There is.
【００２０】次に、上記構成のチップ部品型ＬＥＤの製
造方法を、図３を参照して説明する。Next, a method of manufacturing the chip component type LED having the above structure will be described with reference to FIG.
【００２１】銅箔やニッケル箔等からなる金属フィルム
を所定の間隔Ｌ１でエッチング処理することによってカ
ソード側金属フィルム１とアノード側金属フィルム２と
を形成する〔図３（ａ）参照〕。この場合、エッチング
処理後に、必要に応じて表面のめっき処理を施してもよ
い。例えば、金属フィルムが銅箔である場合には、ニッ
ケル（Ｎｉ）と金（Ａｕ）とでメッキを施す。The cathode side metal film 1 and the anode side metal film 2 are formed by etching a metal film made of copper foil, nickel foil or the like at a predetermined interval L1 [see FIG. 3 (a)]. In this case, after the etching treatment, the surface may be plated if necessary. For example, when the metal film is a copper foil, it is plated with nickel (Ni) and gold (Au).
【００２２】次に、カソード側金属フィルム１とアノー
ド側金属フィルム２とを跨ぐようにして絶縁フィルム３
を形成する〔図３（ｂ）参照〕。絶縁フィルム３は、エ
ッチングされた隙間７の保持のために形成するもので、
スクリーン印刷によって形成してもよく、また光反応性
樹脂（ＵＶ樹脂）を塗布後に紫外線を照射することによ
って形成してもよい。Next, the insulating film 3 is arranged so as to straddle the cathode side metal film 1 and the anode side metal film 2.
Are formed (see FIG. 3B). The insulating film 3 is formed to hold the etched gap 7,
It may be formed by screen printing, or may be formed by applying ultraviolet rays after applying a photoreactive resin (UV resin).
【００２３】次に、この絶縁フィルム３上に、一定の間
隔Ｌ２を存して多数個のＬＥＤチップ４，４・・・を配
置する〔図３（ｃ）参照〕。Next, a large number of LED chips 4, 4, ... Are arranged on the insulating film 3 with a constant interval L2 [see FIG. 3 (c)].
【００２４】各ＬＥＤチップ４，４・・・は、そのカソ
ード面４ａとアノード面４ｂとがそれぞれの金属フィル
ム１，２上に位置するように横方向に寝かせて配置し、
カソード面４ａとこれに対応するカソード側金属フィル
ム１、及びアノード面４ｂとこれに対応するアノード側
金属フィルム２とを、それぞれはんだ又は導電性ペース
ト等の導電性部材５によって直接接続する〔図３
（ｄ）〕。The LED chips 4, 4, ... Are laid sideways so that the cathode surface 4a and the anode surface 4b thereof are located on the respective metal films 1, 2.
The cathode surface 4a and the corresponding cathode-side metal film 1 are directly connected to each other, and the anode surface 4b and the corresponding anode-side metal film 2 are directly connected by a conductive member 5 such as solder or conductive paste [FIG.
(D)].
【００２５】次に、これらＬＥＤチップ４と導電性部材
５とを透光性樹脂６によって封止することにより、一連
につながった状態の多数個のチップ部品型ＬＥＤを製造
する。この場合、カソード側金属フィルム１とアノード
側金属フィルム２との隙間７〔図３（ａ）参照〕に絶縁
フィルム３を形成しているので、表面（ＬＥＤチップの
上面側）から見たときに隙間７が無くなることから、樹
脂封止が容易なものとなる。つまり、樹脂が裏面側に回
り込むことを防止することができるので、裏面のはんだ
付け電極部に樹脂が回ることによる接続不良の発生を防
止することができるものである。Next, the LED chip 4 and the conductive member 5 are sealed with a translucent resin 6 to manufacture a large number of chip component type LEDs connected in series. In this case, since the insulating film 3 is formed in the gap 7 [see FIG. 3 (a)] between the cathode side metal film 1 and the anode side metal film 2, when viewed from the surface (upper side of the LED chip). Since the gap 7 is eliminated, resin sealing becomes easy. That is, it is possible to prevent the resin from wrapping around to the back surface side, so that it is possible to prevent the occurrence of a connection failure due to the resin flowing around the soldering electrode portion on the back surface.
【００２６】この後、図３（ｄ）に破線９，９・・・で
示すように四方を切断して、個々のチップ部品型ＬＥＤ
に分離する。After this, as shown by broken lines 9, 9 ... In FIG.
To separate.
【００２７】図３では、２個分を図示しているが、実際
には低コスト化のためマトリックス状に配置して製造す
る。In FIG. 3, two pieces are shown, but in actuality, they are arranged in a matrix and manufactured for cost reduction.
【００２８】図４は、本発明のチップ部品型ＬＥＤの実
際の寸法例を示している。ここで使用しているＬＥＤチ
ップの寸法は、０．３×０．３×０．３（ｍｍ）であ
る。チップ部品型ＬＥＤとしての横幅と厚みの寸法は、
それぞれ１．０（ｍｍ）と０．４３〜０．４９（ｍｍ）
となっている。つまり、厚みが０．４３〜０．４９（ｍ
ｍ）となっており、図７に示した従来のチップ部品型Ｌ
ＥＤの厚み０．８（ｍｍ）に比べて、０．３７〜０．３
１（ｍｍ）薄くなっている。また、横幅の寸法について
も、本発明のチップ部品型ＬＥＤが１．０（ｍｍ）とな
っており、図７に示した従来のチップ部品型ＬＥＤの横
幅寸法１．６（ｍｍ）に比べて、０．６（ｍｍ）短くな
っている。FIG. 4 shows an example of actual dimensions of the chip part type LED of the present invention. The size of the LED chip used here is 0.3 × 0.3 × 0.3 (mm). The dimensions of width and thickness as a chip component type LED are
1.0 (mm) and 0.43 to 0.49 (mm) respectively
Has become. That is, the thickness is 0.43 to 0.49 (m
m), and the conventional chip part type L shown in FIG.
0.37-0.3 compared to the thickness of ED 0.8 (mm)
It is 1 (mm) thinner. Regarding the width dimension, the chip component type LED of the present invention is 1.0 (mm), which is smaller than the width dimension of the conventional chip component type LED shown in FIG. , 0.6 (mm) shorter.
【００２９】なお、本発明のチップ部品型ＬＥＤでは金
属フィルム１，２を用いているが、両面基板を用いた場
合には、両面基板の絶縁基材の厚みが０．０６（ｍ
ｍ）、両面のフィルム厚みがそれぞれ０．０２（ｍｍ）
となって、全体で０．１（ｍｍ）となることから、金属
フィルムを使用することで、両面基板を使用するよりも
０．０１〜０．０７（ｍｍ）薄くなっている。Although the metal films 1 and 2 are used in the chip part type LED of the present invention, when the double-sided board is used, the thickness of the insulating base material of the double-sided board is 0.06 (m).
m), the film thickness on each side is 0.02 (mm)
Since the total is 0.1 (mm), the use of the metal film is 0.01 to 0.07 (mm) thinner than the use of the double-sided substrate.
【００３０】[0030]
【発明の効果】本発明のチップ部品型ＬＥＤは、所定の
間隔を存して同一平面上に配置されたカソード側金属フ
ィルムとアノード側金属フィルムとを跨ぐようにしてＬ
ＥＤチップが配置されるとともに、このＬＥＤチップ
は、カソード面とアノード面とがそれぞれの金属フィル
ム上に位置するように横方向に寝かせて配置され、カソ
ード面とこれに対応するカソード側金属フィルム及びア
ノード面とこれに対応するアノード側金属フィルムとが
それぞれはんだ又は導電性ペースト等の導電性部材によ
って直接接続され、これらＬＥＤチップと導電性部材と
が金属フィルム上で透光性樹脂によって封止されている
ことにより、ＬＥＤチップが金属フィルムの１層のみに
実装された構造となっている。また、ＬＥＤチップは、
カソード側金属フィルムとアノード側金属フィルムとを
跨ぐようにして配置された絶縁フィルムの上に配置され
た構造となっている。つまり、ＬＥＤチップのカソード
面とこれに対応するカソード側金属フィルム及びＬＥＤ
チップのアノード面とこれに対応するアノード側金属フ
ィルムとが、それぞれはんだ又は導電性ペースト等の導
電性部材によって直接接続されており、金属細線を使用
していないので、チップ部品型ＬＥＤのより薄型化、小
型化が可能となるとともに、両面基板を用いずに金属フ
ィルムを用いていることから、さらなる薄型化、小型化
が可能となるものである。また、金属細線を使用してい
ないので、はんだ付け時の外的応力や、取り付けた基板
の反り等の外的応力によって断線するといったことがな
く、部品としての高い信頼性が得られるものである。EFFECTS OF THE INVENTION The chip-type LED of the present invention is L-shaped so as to straddle a cathode-side metal film and an anode-side metal film which are arranged on the same plane with a predetermined interval.
An ED chip is arranged, and this LED chip is laid laterally so that the cathode surface and the anode surface are located on the respective metal films, and the cathode surface and the corresponding cathode-side metal film and The anode surface and the corresponding anode-side metal film are directly connected by a conductive member such as solder or conductive paste, and the LED chip and the conductive member are sealed on the metal film by a light-transmitting resin. ing
As a result, the LED chip has only one layer of metal film.
The structure is implemented . Also, the LED chip is
It has a structure in which it is arranged on an insulating film arranged so as to straddle the cathode side metal film and the anode side metal film. That is, the cathode surface of the LED chip and the corresponding cathode-side metal film and LED
The anode surface of the chip and the corresponding metal film on the anode side are directly connected to each other by a conductive member such as solder or conductive paste, and no thin metal wire is used. In addition to being able to be downsized and downsized, the use of a metal film without using a double-sided substrate allows further downsizing and downsizing. In addition, since no thin metal wire is used, there is no possibility of disconnection due to external stress during soldering or external stress such as warpage of the mounted substrate, and high reliability as a component can be obtained. .
【００３１】また、本発明のチップ部品型ＬＥＤの製造
方法は、金属フィルムを所定の間隔でエッチング処理す
ることにより、所定の間隔を存したカソード側金属フィ
ルムとアノード側金属フィルムとを形成し、このカソー
ド側金属フィルムとアノード側金属フィルムとを跨ぐよ
うにして絶縁フィルムを形成し、この絶縁フィルム上
に、ＬＥＤチップをそのカソード面とアノード面とがそ
れぞれの金属フィルム上に位置するように横方向に寝か
せて配置し、カソード面とこれに対応する金属フィルム
及びアノード面とこれに対応する金属フィルムとをそれ
ぞれはんだ又は導電性ペーストによって直接接続し、こ
れらＬＥＤチップと導電性部材とを透光性樹脂によって
封止することにより、ＬＥＤチップを金属フィルムの１
層のみに実装したものである。すなわち、金属フィルム
と絶縁フィルムとで表裏の隙間なく構成されているの
で、ＬＥＤチップ周辺を樹脂で封止する際に、裏面側に
樹脂が回るのを確実に防止することができる。つまり、
裏面のはんだ付け電極部に樹脂が回ることによる接続不
良の発生を防止することができる。Further, in the method of manufacturing the chip part type LED of the present invention, the metal film is etched at a predetermined interval to form a cathode side metal film and an anode side metal film having a predetermined interval, An insulating film is formed so as to straddle the metal film on the cathode side and the metal film on the anode side, and the LED chip is laid horizontally on the insulating film so that the cathode surface and the anode surface are located on the respective metal films. The cathode surface and the corresponding metal film and the anode surface and the corresponding metal film are directly connected by solder or conductive paste, respectively, and the LED chip and the conductive member are transparent. LED chip is made of metal film
It is implemented only in layers . That is, since the metal film and the insulating film are formed without any gap between the front and the back, it is possible to reliably prevent the resin from rotating to the back surface side when sealing the periphery of the LED chip with the resin. That is,
It is possible to prevent the occurrence of connection failure due to the resin flowing around the soldering electrode portion on the back surface.
【図１】本発明のチップ部品型ＬＥＤの構造を示す正面
図である。FIG. 1 is a front view showing the structure of a chip component type LED of the present invention.
【図２】本発明のチップ部品型ＬＥＤの構造を示す平面
図である。FIG. 2 is a plan view showing a structure of a chip component type LED of the present invention.
【図３】本発明のチップ部品型ＬＥＤの製造方法を説明
するための図である。FIG. 3 is a diagram for explaining a method for manufacturing a chip part type LED of the present invention.
【図４】本発明のチップ部品型ＬＥＤの実際の寸法例を
示す図である。FIG. 4 is a diagram showing an example of actual dimensions of the chip component type LED of the present invention.
【図５】従来のチップ部品型ＬＥＤの構造の一例を示す
正面図である。FIG. 5 is a front view showing an example of the structure of a conventional chip component type LED.
【図６】従来のチップ部品型ＬＥＤの構造の一例を示す
正面図である。FIG. 6 is a front view showing an example of the structure of a conventional chip component type LED.
【図７】図６に示すチップ部品型ＬＥＤの実際の寸法例
を示す図である。7 is a diagram showing an example of actual dimensions of the chip component type LED shown in FIG.
１ カソード側金属フィルム ２ アノード側金属フィルム ３ 絶縁フィルム ４ ＬＥＤチップ ４ａ カソード面 ４ｂ アノード面 ５ 導電性部材（はんだ又は導電性ペースト） ６ 透光性樹脂 1 Cathode side metal film 2 Anode side metal film 3 insulating film 4 LED chip 4a cathode surface 4b Anode surface 5 Conductive member (solder or conductive paste) 6 Translucent resin
フロントページの続き (56)参考文献 特開 平７−254632（ＪＰ，Ａ) 特開 平２−105548（ＪＰ，Ａ) 特開 平３−233978（ＪＰ，Ａ) 特開 昭53−21771（ＪＰ，Ａ) 特開 平３−94460（ＪＰ，Ａ) 特開 昭62−199022（ＪＰ，Ａ) 特開 平７−297226（ＪＰ，Ａ) 特開 平８−213660（ＪＰ，Ａ) 実開 昭49−107272（ＪＰ，Ｕ) 実開 昭57−2673（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 33/00 H01L 21/52 H01L 21/60 H01L 23/28 Continuation of the front page (56) Reference JP-A-7-254632 (JP, A) JP-A-2-105548 (JP, A) JP-A-3-233978 (JP, A) JP-A-53-21771 (JP , A) JP 3-94460 (JP, A) JP 62-199022 (JP, A) JP 7-297226 (JP, A) JP 8-213660 (JP, A) 49-107272 (JP, U) Actual development 57-2673 (JP, U) (58) Fields investigated (Int.Cl. 7 , DB name) H01L 33/00 H01L 21/52 H01L 21/60 H01L 23 / 28
Claims (4)
れたカソード側金属フィルムとアノード側金属フィルム
とを跨ぐようにしてＬＥＤチップが配置されるととも
に、このＬＥＤチップは、カソード面とアノード面とが
それぞれの金属フィルム上に位置するように横方向に寝
かせて配置され、前記カソード面とこれに対応するカソ
ード側金属フィルム及び前記アノード面とこれに対応す
るアノード側金属フィルムとがそれぞれ導電性部材によ
って直接接続され、これらＬＥＤチップと導電性部材と
が前記金属フィルム上で透光性樹脂によって封止されて
いることにより、前記ＬＥＤチップが前記金属フィルム
の１層のみに実装された構造であることを特徴とするチ
ップ部品型ＬＥＤ。1. An LED chip is arranged so as to straddle a cathode-side metal film and an anode-side metal film that are arranged on the same plane with a predetermined space therebetween, and the LED chip has a cathode surface. The anode surface and the anode side metal film are arranged so as to lie sideways on the respective metal films, and the cathode surface and the corresponding cathode side metal film and the anode surface and the corresponding anode side metal film are respectively formed. The LED chip is directly connected by a conductive member, and the LED chip and the conductive member are sealed with a translucent resin on the metal film, so that the LED chip is connected to the metal film.
A chip part type LED having a structure in which only one layer is mounted .
ストである請求項１記載のチップ部品型ＬＥＤ。2. The chip part type LED according to claim 1, wherein the conductive member is a solder or a conductive paste.
属フィルムと前記アノード側金属フィルムとを跨ぐよう
にして配置された絶縁フィルムの上に配置されているこ
とを特徴とする請求項１又は２記載のチップ部品型ＬＥ
Ｄ。3. The LED chip is arranged on an insulating film which is arranged so as to straddle the cathode-side metal film and the anode-side metal film. Chip part type LE
D.
処理することにより、所定の間隔を存したカソード側金
属フィルムとアノード側金属フィルムとを形成し、この
カソード側金属フィルムとアノード側金属フィルムとを
跨ぐようにして絶縁フィルムを形成し、この絶縁フィル
ム上に、ＬＥＤチップをそのカソード面とアノード面と
がそれぞれの金属フィルム上に位置するように横方向に
寝かせて配置し、前記カソード面とこれに対応する金属
フィルム及び前記アノード面とこれに対応する金属フィ
ルムとをそれぞれはんだ又は導電性ペーストによって直
接接続し、これらＬＥＤチップと導電性部材とを透光性
樹脂によって封止することにより、前記ＬＥＤチップを
前記金属フィルムの１層のみに実装したこことを特徴と
するチップ部品型ＬＥＤの製造方法。4. A cathode-side metal film and an anode-side metal film having a predetermined interval are formed by etching the metal film at a predetermined interval, and the cathode-side metal film and the anode-side metal film are separated from each other. An insulating film is formed so as to straddle the LED chip and the cathode surface and the anode surface are arranged side by side on the insulating film so that the cathode surface and the anode surface thereof are located on the respective metal films. By directly connecting the metal film corresponding to and the anode surface and the metal film corresponding thereto by solder or conductive paste, and sealing the LED chip and the conductive member with a light-transmitting resin , LED chip
A method of manufacturing a chip part type LED, wherein the LED is mounted on only one layer of the metal film .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33236096A JP3526380B2 (en) | 1996-12-12 | 1996-12-12 | Chip component type LED and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33236096A JP3526380B2 (en) | 1996-12-12 | 1996-12-12 | Chip component type LED and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10173241A JPH10173241A (en) | 1998-06-26 |
| JP3526380B2 true JP3526380B2 (en) | 2004-05-10 |
Family
ID=18254092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33236096A Expired - Fee Related JP3526380B2 (en) | 1996-12-12 | 1996-12-12 | Chip component type LED and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3526380B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10008203B4 (en) * | 2000-02-23 | 2008-02-07 | Vishay Semiconductor Gmbh | Method for producing electronic semiconductor components |
| JP2007027157A (en) * | 2005-07-12 | 2007-02-01 | Akita Denshi Systems:Kk | Light emitting diode device, its manufacturing method, and illumination apparatus |
| JP2007273562A (en) | 2006-03-30 | 2007-10-18 | Toshiba Corp | Semiconductor light-emitting device |
-
1996
- 1996-12-12 JP JP33236096A patent/JP3526380B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10173241A (en) | 1998-06-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6838368B1 (en) | Method for making semiconductor device using a nickel film for stopping etching | |
| US8159055B2 (en) | Semiconductor device, lead-frame product used for the same and method for manufacturing the same | |
| US5670797A (en) | Compact light-emitting device with sealing member and light-transmitting resin seal | |
| AU714028B2 (en) | Semiconductor device mounting method and multi-chip module produced by the same | |
| JP3311914B2 (en) | Chip type light emitting diode | |
| JP2002373969A (en) | Semiconductor device and method of manufacturing semiconductor device | |
| KR20050023930A (en) | Tape circuit substrate and semiconductor chip package using thereof | |
| CN1607663A (en) | Band type substrate and semiconductor package using the same | |
| US7508073B2 (en) | Wiring board, semiconductor device using the same, and method for manufacturing wiring board | |
| US9543279B2 (en) | Method of manufacturing a single light-emitting structure | |
| JP3526380B2 (en) | Chip component type LED and method of manufacturing the same | |
| JP2003273280A (en) | Chip package and its manufacturing method | |
| KR20020065705A (en) | Tape circuit substrate and manufacturing method thereof and semiconductor chip package using thereof | |
| CN1518078A (en) | Wiring substrate and its manufacturing method, semiconductor device, electronic module and electronic instrument | |
| JPH05109922A (en) | Semiconductor device | |
| US20020192869A1 (en) | Semiconductor package and fabrication method of the same | |
| JPH06177315A (en) | Multi-layered lead frame | |
| KR100207902B1 (en) | Multi chip package using lead frame | |
| CN101383302A (en) | Integrated circuit package system with overhanging connection stack | |
| JPH09116045A (en) | Resin-sealed semiconductor device of bga type using lead frame and its manufacture | |
| WO2023230923A1 (en) | Wiring substrate and preparation method therefor, back plate, and display device | |
| JPH0267522A (en) | Electronic device | |
| TW202027574A (en) | Flexible printed circuit board and manufacturing method thereof, and package having flexible printed circuit board | |
| KR100608331B1 (en) | Multi chip package | |
| JP2002124538A (en) | Circuit board |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20031205 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20040210 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20040213 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080227 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090227 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100227 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100227 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110227 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120227 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120227 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130227 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130227 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140227 Year of fee payment: 10 |
|
| LAPS | Cancellation because of no payment of annual fees |