JP3525119B2 - Frequency adjustment processing device - Google Patents
Frequency adjustment processing deviceInfo
- Publication number
- JP3525119B2 JP3525119B2 JP2001134446A JP2001134446A JP3525119B2 JP 3525119 B2 JP3525119 B2 JP 3525119B2 JP 2001134446 A JP2001134446 A JP 2001134446A JP 2001134446 A JP2001134446 A JP 2001134446A JP 3525119 B2 JP3525119 B2 JP 3525119B2
- Authority
- JP
- Japan
- Prior art keywords
- frequency
- piezoelectric element
- frequency adjustment
- adjustment
- adjusting means
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【０００１】[0001]
【産業上の利用分野】本発明は水晶振動子等の圧電素子
をスパツタエッチングまたはイオンビームを照射して周
波数の合わせ込みを行なう周波数調整加工装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a frequency adjusting apparatus for performing frequency adjustment by sputtering a piezoelectric element such as a crystal oscillator or irradiating it with an ion beam.
【０００２】[0002]
【従来の技術】従来の水晶振動子に代表される圧電素子
の周波数調整方法は質量を付加して所望の周波数を得る
蒸着周波数調整方法が一般的であったが、近年、新たな
方法として質量を軽減して所望の周波数を得るスパッタ
エッチングあるいはイオンビーム周波数調整方法が開発
されてきている。2. Description of the Related Art A conventional frequency adjusting method for a piezoelectric element typified by a crystal oscillator is a vapor-deposition frequency adjusting method for adding a mass to obtain a desired frequency. There has been developed a method for adjusting the frequency of sputter etching or an ion beam to reduce the frequency and obtain a desired frequency.
【０００３】以下、後者の周波数調整技術について説明
する。所定の切り出し角度と形状に切断研磨され仕上げ
られた圧電素子はベース電極を形成するため、圧電素子
の表裏に電極形状を模したマスクを密着させ、通常、真
空中で銀等の金属膜を蒸着させる。この時、周波数は膜
厚モニタで管理され共振周波数は所望値に対して５００
〜２０００ｐｐｍ低く設定される。The latter frequency adjustment technique will be described below. Since a piezoelectric element that has been cut and polished to a predetermined cutting angle and shape is finished to form a base electrode, a mask simulating the shape of the electrode is adhered to the front and back of the piezoelectric element, and a metal film such as silver is usually evaporated in vacuum. Let At this time, the frequency is controlled by the film thickness monitor and the resonance frequency is 500 with respect to the desired value.
It is set lower by ˜2000 ppm.
【０００４】次に、この圧電素子を保持器に機械的な結
合と電気的な導通をさせるために、半田や導電性接着剤
等を用いてマウントする。Next, the piezoelectric element is mounted on the holder by using solder, a conductive adhesive, or the like for mechanical connection and electrical conduction.
【０００５】そして、周波数調整加工装置では、周波数
調整加工を行う前に圧電素子の共振周波数を測定して合
わせ込み周波数との周波数差を求め、周波数調整加工の
加工レートからスパッタエッチングまたはイオンビーム
を照射する時間を割り出し、周波数調整加工を行うとき
は測定系を電気的に切り離してから周波数調整加工を行
ない、これらの作業を数回繰り返えすことで上記周波数
差が零になるよう合わせ込みを行なう。In the frequency adjustment processing apparatus, the resonance frequency of the piezoelectric element is measured before performing the frequency adjustment processing to obtain the frequency difference from the matching frequency, and the sputter etching or ion beam is calculated from the processing rate of the frequency adjustment processing. When the irradiation time is calculated and frequency adjustment processing is performed, the measurement system is electrically disconnected, frequency adjustment processing is performed, and these operations are repeated several times so that the frequency difference becomes zero. To do.
【０００６】なお、加工レートは一般的にベース電極の
面積が大きい程遅くなり、また、圧電素子に印可される
加工エネルギーが大きい程速くなるため、周波数と加工
条件毎に適正値を予め求めておく。Incidentally, the processing rate generally becomes slower as the area of the base electrode becomes larger, and becomes faster as the processing energy applied to the piezoelectric element becomes larger. Therefore, an appropriate value is previously obtained for each frequency and processing condition. deep.
【０００７】[0007]
【発明が解決しようとする課題】周波数調整加工の加工
レートが同じ周波数帯であっても各々の圧電素子で違っ
てしまうこと、またはスパッタガンやイオンビームガン
の周波数調整源に起因し加工レートが不安定でばらつき
をもつことから、予め求めた加工レートと実際の加工レ
ートが異なり、周波数調整後の共振周波数が合わせ込み
周波数からずれてしまっていた。Even if the processing rate of frequency adjustment processing is the same frequency band, the piezoelectric elements are different from each other, or the processing rate is unsatisfactory due to the frequency adjustment source of the sputter gun or ion beam gun. Since it is stable and has variations, the machining rate obtained in advance differs from the actual machining rate, and the resonance frequency after frequency adjustment has deviated from the matching frequency.
【０００８】また、周波数調整加工の加工レートは、周
波数調整源の印加電流を可変することにより制御してい
たが、周波数調整源を定常状態で維持させるためにはあ
る一定以上の電力を供給する必要があり、微小な加工レ
ートを確保するのは困難であった。Further, the processing rate of the frequency adjustment processing is controlled by changing the applied current of the frequency adjustment source, but in order to maintain the frequency adjustment source in a steady state, electric power above a certain level is supplied. It was necessary, and it was difficult to secure a minute processing rate.
【０００９】更に、前述の如く各々の圧電素子で周波数
調整前の周波数が大きくばらついているため、加工レー
トが固定であると、合わせ込み周波数との差が大きい圧
電素子は加工時間が長くなり、機械能力を低下させる原
因となっていた。Further, as described above, the frequency before frequency adjustment varies widely among the respective piezoelectric elements, so if the processing rate is fixed, the piezoelectric element having a large difference from the fitting frequency will have a longer processing time. It was a cause of lowering the mechanical capacity.
【００１０】一方、従来の方法では、スパッタエッチン
グまたはイオンビームを照射するとプラスに帯電したア
ルゴンイオンが圧電素子の電極膜にぶつかるため、電極
膜にはプラス電荷が帯電する。帯電したプラス電荷はア
ースに流れようとするが、周波数を測定する測定系が接
続されていると、測定系を通じて発振回路や伝送波測定
器（この測定器を以下ネットワークアナライザと称す）
に流れてしまう。発振回路やネットワークアナライザは
交流信号で動作するものであるため、直流電流が流れる
と機能を破壊する危険性があり周波数調整加工時には電
気的に測定系を切り離す必要があった。On the other hand, in the conventional method, when sputter etching or irradiation with an ion beam is performed, positively charged argon ions collide with the electrode film of the piezoelectric element, so that the electrode film is positively charged. The charged positive charge tends to flow to the ground, but if a measurement system for measuring the frequency is connected, an oscillation circuit and a transmission wave measuring instrument (this measuring instrument is hereinafter referred to as a network analyzer) will be passed through the measurement system.
Flows to. Since the oscillating circuit and the network analyzer operate with an AC signal, there is a risk of destroying the function when a DC current flows, and it was necessary to electrically disconnect the measurement system during frequency adjustment processing.
【００１１】また、微小な加工レートが得られなかった
り、機械能力を低下させないように加工レートを大きく
してしまうと、周波数調整源をシャッターもしくは電源
で遮断したときに時間差が生じて、合わせ込み周波数に
対し調整量が多くなり過ぎ所望の周波数に合わせること
ができない。Further, if a minute processing rate cannot be obtained or if the processing rate is increased so as not to reduce the mechanical capability, a time difference will occur when the frequency adjustment source is shut off by a shutter or a power source, and the adjustment will be performed. The amount of adjustment is too large for the frequency, and the desired frequency cannot be adjusted.
【００１２】そこで、本発明の目的は、圧電素子の共振
周波数を測定しながら周波数調整加工を行い、周波数調
整源と圧電素子の距離を可変にすることにより最適な加
工レート（最短時間で目標とする周波数に精度良く調整
加工すること）を得るとともに精度のよい周波数調整加
工を効率よく行うことにある。Therefore, an object of the present invention is to perform the frequency adjustment processing while measuring the resonance frequency of the piezoelectric element, and to make the distance between the frequency adjustment source and the piezoelectric element variable so as to obtain the optimum processing rate (target in the shortest time). Frequency adjustment processing with high precision) and accurate frequency adjustment processing efficiently.
【００１３】[0013]
【課題を解決するための手段】（１）本発明の周波数調
整加工装置は、スパッタエッチングまたはイオンビーム
を照射することによって圧電素子の電極膜の一部を取り
除く周波数調整手段と、前記周波数調整手段の外部に配
置され、前記圧電素子に帯電するプラス電荷を前記圧電
素子から除去する電荷除去手段と、前記圧電素子の周波
数を測定する周波数測定手段と、を備えた周波数調整加
工装置であって、前記電荷除去手段による前記プラス電
荷の除去と前記周波数測定手段による周波数の測定とを
同時に行いながら、前記周波数調整手段によって前記電
極膜の一部を取り除くとともに、前記周波数調整手段の
印加電流を変化させることなく、前記周波数調整手段と
前記圧電素子との距離を駆動手段により変化させること
により周波数調整加工の加工レートを制御することを特
徴とする周波数調整加工装置。
（２）（１）において、前記圧電素子の周波数と合せ込
み周波数との差を外部演算処理装置により管理しながら
最適となる加工レートが得られるように、前記周波数調
整手段と前記圧電素子との距離を前記駆動手段により制
御することを特徴とする。
（３）（１）又は（２）において、前記周波数調整手段
と前記圧電素子との距離が異なる前記周波数調整手段を
少なくとも２個備えたことを特徴とする。(1) A frequency adjusting device of the present invention is a frequency adjusting means for removing a part of an electrode film of a piezoelectric element by sputter etching or irradiating an ion beam, and the frequency adjusting means. disposed of outside, and a charge removing means for removing the positive charge from the piezoelectric element for charging the piezoelectric element, a frequency adjustment processing device and a frequency measuring means for measuring a frequency of said piezoelectric element While simultaneously removing the positive charge by the charge removing unit and measuring the frequency by the frequency measuring unit, a part of the electrode film is removed by the frequency adjusting unit and the applied current of the frequency adjusting unit is changed. Frequency adjustment by changing the distance between the frequency adjusting means and the piezoelectric element by the driving means without Frequency adjustment processing apparatus and controls the processing rate of the factory. (2) In (1), the frequency adjusting means and the piezoelectric element are combined so that an optimum processing rate can be obtained while managing the difference between the frequency of the piezoelectric element and the fitting frequency by an external arithmetic processing unit. The distance is controlled by the driving means. (3) In (1) or (2), at least two frequency adjusting means having different distances between the frequency adjusting means and the piezoelectric element are provided.
【００１４】[0014]
【作用】測定系のインピーダンス整合回路（これを以下
フィクスチャと称す）は通常は抵抗のみからなるが、電
荷除去手段として圧電素子とアースとの間にコイルを接
続したインピーダンス整合回路を用いることにより、測
定系に流れ込む直流分を遮断でき交流分だけをバイパス
できる。その結果、測定系を破壊することがなく、圧電
素子の周波数を測定できる。[Function] The impedance matching circuit of the measuring system (hereinafter referred to as a fixture) usually consists of only a resistor, but by using an impedance matching circuit in which a coil is connected between the piezoelectric element and the ground as the charge removing means. , The DC component that flows into the measurement system can be blocked and only the AC component can be bypassed. As a result, the frequency of the piezoelectric element can be measured without destroying the measurement system.
【００１５】また、周波数調整加工の加工レートは、周
波数調整源と圧電素子の距離が長くなるにつれて減少
し、ある距離を越えると零になるため、合わせ込み周波
数と圧電素子の周波数差が数百〜数千ｐｐｍあるような
場合は距離を短くして加工レートを速くし、周波数差が
数十ｐｐｍ以内のような場合は距離を長くすることで加
工レートを遅くし、周波数調整源の印加電流を可変する
ことなく自由に加工レートを制御できる。Further, the processing rate of the frequency adjustment processing decreases as the distance between the frequency adjustment source and the piezoelectric element increases, and becomes zero when the distance exceeds a certain distance. Therefore, the difference between the fitting frequency and the frequency of the piezoelectric element is several hundreds. In case of several thousand ppm, shorten the distance to increase the machining rate, and in case of frequency difference is within several tens of ppm, lengthen the distance to reduce the machining rate and reduce the current applied to the frequency adjustment source. The machining rate can be controlled freely without changing the.
【００１６】[0016]
【実施例】以下、本発明の実施例を図１、図２、図３及
び図４により説明する。Embodiments of the present invention will be described below with reference to FIGS. 1, 2, 3 and 4.
【００１７】（実施例１）図１は、本発明の周波数調整
加工装置の模式図である。(Embodiment 1) FIG. 1 is a schematic view of a frequency adjustment processing apparatus of the present invention.
【００１８】周波数調整手段すなわち周波数調整源９の
内部には、ステンレス製のφ１０ｍｍの電極棒６があ
り、直流電源１３が接続されている。周波数調整源９の
電極棒６は、外周部７の円筒状をしたφ１００ｍｍのス
テンレスで覆われている。電極棒６と外周部７は絶縁さ
れており、外周部７はアースシールドされている。周波
数調整源９及び圧電素子３は、真空容器１０の内部に納
められており、真空容器１０は、メカニカルブースタポ
ンプ１１を介して、ロータリーポンプ１２で真空排気さ
れる。Inside the frequency adjusting means, that is, the frequency adjusting source 9, there is an electrode rod 6 made of stainless steel and having a diameter of 10 mm, to which a DC power source 13 is connected. Of the frequency adjustment source 9
The electrode rod 6 is covered with a cylindrical outer peripheral portion 7 made of stainless steel having a diameter of 100 mm. The electrode rod 6 and the outer peripheral portion 7 are insulated, and the outer peripheral portion 7 is grounded. The frequency adjustment source 9 and the piezoelectric element 3 are housed inside a vacuum container 10, and the vacuum container 10 is evacuated by a rotary pump 12 via a mechanical booster pump 11.
【００１９】真空容器１０を１０-3Ｔｏｒｒレベルに真
空排気したのち、周波数調整源９の内部にガスボンベ８
よりアルゴンガスを１０ー1〜１０ー2Ｔｏｒｒ程度の真空
度になるよう流入させ、電極棒６に直流電圧を印加する
ことにより、電極棒６とアースシールドされた外周部７
の間でアルゴンプラズマが発生する。発生したプラズマ
によりアルゴンガスはラジカル及びイオンとなり、イオ
ン化されたアルゴンガスは、電極棒６の先端方向に設け
られたφ３ｍｍの噴き出し口５から飛び出して、対向に
位置した水晶振動子等の圧電素子３の表面に衝突する。
アルゴンイオンが圧電素子３に衝突することで電極膜４
の銀を弾き飛ばすため、電極の質量は減少し、その結果
圧電素子３の周波数は低い周波数から高い周波数へ変化
する。After evacuating the vacuum container 10 to a level of 10 −3 Torr, the gas cylinder 8 is placed inside the frequency adjusting source 9.
Argon gas is introduced so as to have a vacuum degree of about 10 -1 to 10 -2 Torr, and a direct current voltage is applied to the electrode rod 6, so that the electrode rod 6 and the outer peripheral portion 7 are grounded.
An argon plasma is generated between them. The generated plasma turns the argon gas into radicals and ions, and the ionized argon gas jumps out from the ejection port 5 of 3 mm in diameter provided in the tip direction of the electrode rod 6, and the piezoelectric element 3 such as a quartz oscillator located in the opposite direction. Hit the surface of.
When the argon ions collide with the piezoelectric element 3, the electrode film 4
Since the silver of the above is flipped off, the mass of the electrode is reduced, and as a result, the frequency of the piezoelectric element 3 changes from the low frequency to the high frequency.
【００２０】アルゴンイオンが衝突することにより変化
する圧電素子３の周波数は、フィクスチャ２を介して、
周波数測定手段すなわちネットワークアナライザ１によ
って共振させることで測定できる。ネットワークアナラ
イザ１とフィクスチャ２の接続は、５０Ω系の同軸ケー
ブルを用いる。The frequency of the piezoelectric element 3 which is changed by the collision of the argon ions is changed by the fixture 2.
It can be measured by resonating with the frequency measuring means, that is, the network analyzer 1. For connection between the network analyzer 1 and the fixture 2, a 50Ω system coaxial cable is used.
【００２１】図３は、本発明のフィクスチャの回路図で
ある。FIG. 3 is a circuit diagram of the fixture of the present invention.
【００２２】抵抗１９、２０、２１はπ型に配置され、
コイル２２は抵抗２１と並列になるように接続されてい
る。コイル２２は圧電素子３とアースを短絡するように
接続されているため、圧電素子３にプラス電荷が帯電し
て信号線に直流分が流れてもコイル２２によりアースに
落ちる。よって、ネットワークアナライザ１には交流分
だけが流れ込み、圧電素子３の周波数を測定することが
できる。The resistors 19, 20, 21 are arranged in a π type,
The coil 22 is connected in parallel with the resistor 21. Since the coil 22 is connected so as to short-circuit the piezoelectric element 3 and the ground, even if the piezoelectric element 3 is charged with positive charges and a direct current component flows through the signal line, the coil 22 drops to the ground. Therefore, only the AC component flows into the network analyzer 1, and the frequency of the piezoelectric element 3 can be measured.
【００２３】また、抵抗１９、２０を省略した簡易的な
回路でも同様の効果が得られる。The same effect can be obtained with a simple circuit in which the resistors 19 and 20 are omitted.
【００２４】測定した圧電素子３の周波数は、外部の演
算処理装置１５に送られ、合わせ込み周波数との測定差
から最適な加工レートを算出する。算出された加工レー
トを得るための圧電素子３と噴き出し口５の距離を割り
出して、周波数調整源９の駆動装置１４へ信号を送り、
周波数調整源９を前後に移動させる。The measured frequency of the piezoelectric element 3 is sent to the external arithmetic processing unit 15 and the optimum processing rate is calculated from the measurement difference from the fitting frequency. The distance between the piezoelectric element 3 and the ejection port 5 for obtaining the calculated processing rate is calculated, and a signal is sent to the driving device 14 of the frequency adjustment source 9,
The frequency adjustment source 9 is moved back and forth.
【００２５】圧電素子３と噴き出し口５の距離は５〜２
０ｍｍまで可変できる機構になっており、周波数調整加
工を開始する前は５ｍｍの距離に保たれている。加工が
始まると周波数調整源９は前記周波数差からプログラム
された周波数差と加工レートの設定値により周波数調整
加工しながら徐々に後方へ移動し加工レートを速い状態
から遅くさせて行き、圧電素子３の共振周波数が合わせ
込み周波数と一致したとき、プラズマの発生を遮断す
る。The distance between the piezoelectric element 3 and the ejection port 5 is 5 to 2
It has a mechanism that can be changed up to 0 mm, and is kept at a distance of 5 mm before starting frequency adjustment processing. When the machining is started, the frequency adjusting source 9 gradually moves backward while slowing the machining rate while adjusting the frequency according to the programmed frequency difference from the frequency difference and the set value of the machining rate, and slowing the machining rate. When the resonance frequency of 1 matches the matching frequency, the generation of plasma is shut off.
【００２６】圧電素子３へのアルゴンイオンの照射及び
遮断には直流電源１３を直接開閉してもよいし、プラズ
マを連続発生させた状態でシャッタ１６をシャッタ駆動
機構１７で制御して開閉してもよい。To irradiate and block the argon ions to the piezoelectric element 3, the DC power source 13 may be directly opened or closed, or the shutter 16 is controlled by the shutter drive mechanism 17 to open or close while plasma is continuously generated. Good.
【００２７】図４は、本発明の一つの周波数調整源を設
けた周波数調整加工装置で周波数調整した圧電素子の周
波数変化の過程を示す図である。FIG. 4 is a diagram showing a process of frequency change of the piezoelectric element whose frequency is adjusted by the frequency adjustment processing apparatus provided with one frequency adjustment source of the present invention.
【００２８】直流電源を投入すると、圧電素子の周波数
は合わせ込み周波数へ徐々に近づき、合わせ込み周波数
近傍になったところで周波数調整源９を圧電素子３から
遠ざけることで、最適な加工レートを得ることが可能と
なる。When the DC power source is turned on, the frequency of the piezoelectric element gradually approaches the tuning frequency, and when the frequency is close to the tuning frequency, the frequency adjusting source 9 is moved away from the piezoelectric element 3 to obtain an optimum processing rate. Is possible.
【００２９】（実施例２）また、さらに効率的な周波数
調整制御装置とするための説明を図２の模式図を用いて
行なう。(Embodiment 2) Further, a description will be given with reference to the schematic diagram of FIG. 2 so as to provide a more efficient frequency adjustment control device.
【００３０】本装置は、３箇所の周波数調整源９ａ〜９
ｃを有し、左から大まかな周波数調整を行なう粗調
（Ｈ）、中間的な調整を行なう粗微調（Ｍ）、最終の合
わせ込みを行なう微調（Ｌ）から構成され、調整用の圧
電素子３は搬送機構１８により粗調、粗微調、微調のス
テップで搬送され周波数調整される。This apparatus is provided with three frequency adjustment sources 9a-9.
A piezoelectric element for adjustment, which has c and is composed of a coarse adjustment (H) for roughly adjusting the frequency from the left, a coarse adjustment (M) for performing an intermediate adjustment, and a fine adjustment (L) for performing the final adjustment. 3 is transported by the transport mechanism 18 in steps of coarse adjustment, coarse fine adjustment, and fine adjustment, and the frequency is adjusted.
【００３１】粗調は、ベース電極上がりの２０００ｐｐ
ｍ程度からのばらつきを所望の共振周波数の合わせ込み
値に対し２００ｐｐｍまでの合わせ込みを受け持ち圧電
素子３と周波数調整源９ａとの距離は５ｍｍ程度と他の
周波数調整源に比べ近い距離を設定し、これにより加工
レートは約８００ｐｐｍ／秒と速い加工レートが得られ
る。Rough adjustment is 2000 pp above the base electrode.
The distance from the piezoelectric element 3 to the frequency adjusting source 9a is about 5 mm, which is close to that of other frequency adjusting sources, and is set to a distance of about 5 mm. As a result, a high processing rate of about 800 ppm / sec can be obtained.
【００３２】粗微調は、粗調上がりの圧電素子３を５０
ｐｐｍまでの合わせ込みを受け持ち圧電素子３と周波数
調整源９ｂとの距離は１０ｍｍ程度に設定し、加工レー
トは約１００ｐｐｍ／秒が得られる。For the coarse and fine adjustment, the piezoelectric element 3 which is raised in the coarse adjustment is used.
The distance between the piezoelectric element 3 and the frequency adjusting source 9b is set to about 10 mm, and the processing rate is about 100 ppm / sec.
【００３３】微調は、粗微調上がりの圧電素子３を０ｐ
ｐｍまでの合わせ込みを受け持ち、圧電素子３と周波数
調整源９ｃとの距離は２０ｍｍ程度に設定し、加工レー
トは約２０ｐｐｍ／秒の遅い加工レートが得られる。For fine adjustment, the piezoelectric element 3 for coarse and fine adjustment is set to 0p.
Taking the adjustment up to pm, the distance between the piezoelectric element 3 and the frequency adjusting source 9c is set to about 20 mm, and a slow processing rate of about 20 ppm / sec can be obtained.
【００３４】周波数調整源９ａ〜９ｃは、個々に圧電素
子３の共振周波数をフィクスチャ２を介してネットワー
クアナライザ１で測定し、外部演算装置１５で合わせ込
み周波数との周波数差を管理し、最適加工レートとなる
よう駆動装置１４へ制御信号を送り圧電素子３と周波数
調整源９ａ〜９ｃまでの距離を可変させる。The frequency adjusting sources 9a to 9c individually measure the resonance frequency of the piezoelectric element 3 with the network analyzer 1 via the fixture 2, and the external arithmetic unit 15 manages the frequency difference from the matching frequency to optimize the resonance frequency. A control signal is sent to the driving device 14 so that the processing rate is obtained, and the distance between the piezoelectric element 3 and the frequency adjusting sources 9a to 9c is changed.
【００３５】個々の周波数調整手段の動作については、
図１における説明と同じであるので省略する。Regarding the operation of each frequency adjusting means,
Since it is the same as the description in FIG. 1, it is omitted.
【００３６】なお、本発明は上記実施例に限定されるこ
となく、幾多の変更を加え得ることは勿論である。The present invention is not limited to the above embodiment, and it goes without saying that many modifications can be made.
【００３７】[0037]
【発明の効果】本発明によれば、スパッタエッチングま
たはイオンビームにより周波数調整加工を行う加工装置
において、圧電素子の周波数を測定しながら周波数調整
加工を行い、さらに、周波数調整手段の印加電流を変化
させることなく、加工レートを自由にコントロールでき
るため、所望の共振周波数に対する合わせ込み精度は数
ｐｐｍまでのずれにおさめることができる。According to the present invention, in a processing apparatus for performing frequency adjustment processing by sputter etching or ion beam, the frequency adjustment processing is performed while measuring the frequency of the piezoelectric element, and further the applied current of the frequency adjustment means is changed. Since the processing rate can be freely controlled without doing so, the matching accuracy with respect to the desired resonance frequency can be kept within a few ppm.
【００３８】また、加工レートを常に最適にコントロー
ルすることに加え、複数の周波数調整手段を用いること
により、従来の装置に比べ加工時間を大幅に短縮でき
る。Further, in addition to always controlling the machining rate optimally, by using a plurality of frequency adjusting means, the machining time can be greatly shortened as compared with the conventional apparatus.
【００３９】[0039]
【図１】本発明の周波数調整制御装置の模式図。FIG. 1 is a schematic diagram of a frequency adjustment control device of the present invention.
【図２】本発明の他の周波数調整制御装置の模式図。FIG. 2 is a schematic diagram of another frequency adjustment control device of the present invention.
【図３】本発明のフィクスチャの回路図。FIG. 3 is a circuit diagram of a fixture of the present invention.
【図４】圧電素子の周波数調整過程をグラフにした図。FIG. 4 is a graph showing a frequency adjustment process of the piezoelectric element.
１ ネットワークアナライザ ２ フィクスチャ ３ 圧電素子 ４ 電極膜 ５ 噴き出し口 ６ 電極棒 ７ 外周部 ８ ガスボンベ ９ 周波数調整源 １０ 真空容器 １１ メカニカルブースタポンプ １２ ロータリポンプ １３ 直流電源 １４ 駆動装置 １５ 外部演算装置 １６ シャッタ １７ シャッタ駆動機構 ２０ 圧電素子搬送機構 １９ 抵抗 ２０ 抵抗 ２１ 抵抗 ２２ コイル 1 Network analyzer 2 fixture 3 Piezoelectric element 4 electrode film 5 spout 6 electrode rod 7 Outer periphery 8 gas cylinders 9 Frequency adjustment source 10 vacuum container 11 Mechanical booster pump 12 Rotary pump 13 DC power supply 14 Drive 15 External computing device 16 shutters 17 Shutter drive mechanism 20 Piezoelectric element transport mechanism 19 resistance 20 resistance 21 Resistance 22 coils
フロントページの続き (56)参考文献 特開 平４−196708（ＪＰ，Ａ) 特開 平４−196610（ＪＰ，Ａ) 特開 平２−248042（ＪＰ，Ａ) 特開 平３−209906（ＪＰ，Ａ) 特開 平２−130915（ＪＰ，Ａ) 特開 昭61−295381（ＪＰ，Ａ) 特開 平５−48363（ＪＰ，Ａ) 特公 昭63−34643（ＪＰ，Ｂ２) ЗЛЕКТРОННАЯ ТЕХНИ КА、СЕР．РАДИОДЕТАЛИ И РАДИОКОМПОНЕНТ Ы、２［47］（1982）（露）Ｐ．51− 55、Continued front page (56) Reference JP-A-4-196708 (JP, A) JP-A-4-196610 (JP, A) Japanese Unexamined Patent Publication No. 2-248042 (JP, A) JP-A-3-209906 (JP, A) JP-A-2-130915 (JP, A) JP-A-61-295381 (JP, A) JP-A-5-48363 (JP, A) Japanese Patent Publication Sho 63-34643 (JP, B2) ЗЛЕКТРОННАЯ ТЕХНИ КА, СЕР. РАДИОДЕТАЛИ И РАД И ОКО МПО НЕНТ Ы 2 [47] (1982) (Russia) P. 51- 55,
Claims (3)
を照射することによって圧電素子の電極膜の一部を取り
除く周波数調整手段と、 前記周波数調整手段の外部に配置され、前記圧電素子に
帯電するプラス電荷を前記圧電素子から除去する電荷除
去手段と、 前記圧電素子の周波数を測定する周波数測定手段と、を
備えた周波数調整加工装置であって、 前記電荷除去手段による前記プラス電荷の除去と前記周
波数測定手段による周波数の測定とを同時に行いなが
ら、前記周波数調整手段によって前記電極膜の一部を取
り除くとともに、 前記周波数調整手段の印加電流を変化させることなく、
前記周波数調整手段と前記圧電素子との距離を駆動手段
により変化させることにより周波数調整加工の加工レー
トを制御することを特徴とする周波数調整加工装置。And frequency adjustment means for removing a portion of claim 1. A sputter etching or the electrode film of the pressure-electronic device by the irradiation with the ion beam, is arranged outside of said frequency adjusting means, for charging said piezoelectric element A frequency adjustment processing apparatus comprising: a charge removing unit that removes positive charges from the piezoelectric element; and a frequency measuring unit that measures the frequency of the piezoelectric element, wherein the removal of the positive charges by the charge removing unit and the While simultaneously performing the frequency measurement by the frequency measuring means, while removing a part of the electrode film by the frequency adjusting means, without changing the applied current of the frequency adjusting means,
A frequency adjustment processing apparatus, wherein a processing rate of frequency adjustment processing is controlled by changing a distance between the frequency adjustment means and the piezoelectric element by a driving means.
との差を外部演算処理装置により管理しながら最適とな
る加工レートが得られるように、前記周波数調整手段と
前記圧電素子との距離を前記駆動手段により制御するこ
とを特徴とする請求項１に記載の周波数調整加工装置。2. The distance between the frequency adjusting means and the piezoelectric element is adjusted so that an optimum processing rate can be obtained while managing the difference between the frequency of the piezoelectric element and the fitting frequency by an external arithmetic processing unit. The frequency adjustment processing device according to claim 1, wherein the frequency adjustment processing device is controlled by a driving unit.
距離が異なる前記周波数調整手段を少なくとも２個備え
たことを特徴とする請求項１又は２に記載の周波数調整
加工装置。3. The frequency adjusting device according to claim 1, further comprising at least two frequency adjusting means having different distances between the frequency adjusting means and the piezoelectric element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001134446A JP3525119B2 (en) | 1993-05-27 | 2001-05-01 | Frequency adjustment processing device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5-126311 | 1993-05-27 | ||
| JP12631193 | 1993-05-27 | ||
| JP2001134446A JP3525119B2 (en) | 1993-05-27 | 2001-05-01 | Frequency adjustment processing device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11304194A Division JP3500185B2 (en) | 1993-05-27 | 1994-05-26 | Frequency adjustment processing device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002205858A Division JP3573142B2 (en) | 1993-05-27 | 2002-07-15 | Frequency adjustment processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002016465A JP2002016465A (en) | 2002-01-18 |
| JP3525119B2 true JP3525119B2 (en) | 2004-05-10 |
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ID=26462529
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001134446A Expired - Lifetime JP3525119B2 (en) | 1993-05-27 | 2001-05-01 | Frequency adjustment processing device |
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| Country | Link |
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Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4232239A (en) * | 1979-03-16 | 1980-11-04 | Motorola, Inc. | Frequency adjustment of piezoelectric resonator utilizing low energy oxygen glow device for anodizing electrodes |
| US4626312A (en) * | 1985-06-24 | 1986-12-02 | The Perkin-Elmer Corporation | Plasma etching system for minimizing stray electrical discharges |
| JPH02130915A (en) * | 1988-11-11 | 1990-05-18 | Anelva Corp | Plasma processing equipment |
| JP2737993B2 (en) * | 1989-03-22 | 1998-04-08 | 日本電気株式会社 | Dry etching equipment |
| JPH03209906A (en) * | 1990-01-11 | 1991-09-12 | Yamanashi Denpa Kk | Vapor deposition controller for adjusting frequency of crystal resonator |
| JPH04196610A (en) * | 1990-11-26 | 1992-07-16 | Seiko Epson Corp | Frequency adjustment method for piezoelectric vibrator |
| JPH07118624B2 (en) * | 1990-11-28 | 1995-12-18 | キンセキ株式会社 | Piezoelectric element frequency adjusting device and frequency adjusting method |
| JPH0548363A (en) * | 1991-02-19 | 1993-02-26 | Showa Shinku:Kk | Continuous film forming device for crystal resonator |
-
2001
- 2001-05-01 JP JP2001134446A patent/JP3525119B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
| Title |
|---|
| ЗЛЕКТРОННАЯ ТЕХНИКА、СЕР．РАДИОДЕТАЛИ И РАДИОКОМПОНЕНТЫ、２［４７］（１９８２）（露）Ｐ．５１−５５、 |
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