JP3509543B2 - Method for manufacturing semiconductor laser device - Google Patents
Method for manufacturing semiconductor laser deviceInfo
- Publication number
- JP3509543B2 JP3509543B2 JP08308498A JP8308498A JP3509543B2 JP 3509543 B2 JP3509543 B2 JP 3509543B2 JP 08308498 A JP08308498 A JP 08308498A JP 8308498 A JP8308498 A JP 8308498A JP 3509543 B2 JP3509543 B2 JP 3509543B2
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- film
- laser
- face
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Semiconductor Lasers (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体レーザチッ
プの端面に所定の反射率を有する保護膜を形成する際に
用いられる成膜方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming method used for forming a protective film having a predetermined reflectance on an end face of a semiconductor laser chip.
【０００２】[0002]
【従来の技術】図５に示すように半導体レーザの多くは
ＧａＡｓレーザチップ５の光出射端面５ａ，５ｂに等し
い反射率を有する保護膜１２ａを設けて構成されてい
る。保護膜１２ａがＡｌ2Ｏ3で構成されている場合、一
例としてこのＡｌ2Ｏ3膜の屈折率（ｎ）をｎ＝１．６
０、レーザチップ５の屈折率をｎ＝３．５０として計算
すると、保護膜１２ａの膜厚を変化させることによっ
て、図６に示すように保護膜１２ａの反射率が変化す
る。(図６はレーザ発振波長７８００Åでの計算結果を
示している。)これに対して、光出力２０ｍＷ以上の高
出力レーザの場合、図７に示すように、一般的には主出
射面側からの光出力Ｐｆを高くするため、主出射面側５
ａを低反射、後面側５ｂを高反射となるよう設計してい
る。この場合、主出射面側５ａのＡｌ2Ｏ3保護膜１２ａ
の反射率は約１５％以下の低反射に設定され、この反射
率に対応する膜厚は約７００〜１７００Åとなる。ま
た、後面側５ｂの保護膜１３は、第１層及び第３層１３
ａの厚さλ／４（λ：波長）に相当するＡｌ2Ｏ3膜と第
２層及び第４層１３ｂの厚さλ／４に相当するアモルフ
ァスＳｉとの交互積層により構成されており、最後の第
５層１３ｃは厚さλ／４に相当するＡｌ2Ｏ3膜である。
また、その反射率は約８５％以上の高反射率となってい
る。2. Description of the Related Art As shown in FIG. 5, most semiconductor lasers are provided with a protective film 12a having the same reflectance as the light emitting end faces 5a and 5b of a GaAs laser chip 5. When the protective film 12a is made of Al 2 O 3 , the refractive index (n) of this Al 2 O 3 film is n = 1.6, as an example.
0 and the refractive index of the laser chip 5 is calculated as n = 3.50, the reflectance of the protective film 12a changes as shown in FIG. 6 by changing the film thickness of the protective film 12a. (Fig. 6 shows the calculation results at the laser oscillation wavelength of 7800Å.) On the other hand, in the case of a high-power laser with an optical output of 20 mW or more, as shown in Fig. 7, generally from the main emission surface side. In order to increase the optical output Pf of the
A is designed to have low reflection and the rear surface side 5b is designed to have high reflection. In this case, the Al 2 O 3 protective film 12a on the main emission surface side 5a
The reflectance is set to a low reflectance of about 15% or less, and the film thickness corresponding to this reflectance is about 700 to 1700Å. Further, the protective film 13 on the rear surface side 5b is formed of the first layer and the third layer 13
The Al 2 O 3 film corresponding to the thickness λ / 4 (λ: wavelength) of a and the amorphous Si corresponding to the thickness λ / 4 of the second layer and the fourth layer 13b are alternately laminated. The final fifth layer 13c is an Al 2 O 3 film having a thickness of λ / 4.
Further, the reflectance thereof is as high as about 85% or more.
【０００３】次に半導体レーザチップの光出射端面に上
述したような反射率を有する保護膜を形成する場合の方
法について以下に述べる。Next, a method for forming the protective film having the above-mentioned reflectance on the light emitting end face of the semiconductor laser chip will be described below.
【０００４】まず、図８に示すように、半導体レーザウ
エハ１の電極２と、電極２の間へ発光部（チャネル）３
と直交方向に劈開線を好くライブにより形成した後、図
９に示すようにウエハ１を劈開によってレーザバー（バ
ー状態のレーザチップ）５の状態にする。次に、図１０
に示すようにレーザバー５を、レーザバー固定装置６へ
積層する。この時、すべてのレーザバーにおいて、レー
ザチップ（バー）の主出射面側５ａ及び後面側出射面５
ｂが同じ向きとなるようにセットする。次にレーザバー
固定装置６に固定されたレーザバー５の光出射端面に所
定の反射率を有する保護膜の形成を行うが、この場合、
一般的には図１１に示したような真空蒸着装置が用いら
れる。First, as shown in FIG. 8, an electrode 2 of a semiconductor laser wafer 1 and a light emitting portion (channel) 3 between the electrodes 2 are formed.
After forming a cleavage line in a direction orthogonal to, preferably by live, the wafer 1 is cleaved into a laser bar (bar-shaped laser chip) 5 as shown in FIG. Next, FIG.
The laser bar 5 is laminated on the laser bar fixing device 6 as shown in FIG. At this time, in all the laser bars, the main emission surface side 5a and the rear emission surface 5 of the laser chip (bar) are
Set so that b is in the same direction. Next, a protective film having a predetermined reflectance is formed on the light emitting end surface of the laser bar 5 fixed to the laser bar fixing device 6. In this case,
Generally, a vacuum vapor deposition apparatus as shown in FIG. 11 is used.
【０００５】この真空蒸着装置はチャンバ８内に蒸着源
１０と先に述べたレーザバー固定装置６を保持するため
のホルダ７と蒸着膜厚モニタ用の水晶振動子１１を備え
ている。[0005] The vacuum evaporation apparatus includes a crystal oscillator 11 for the fit <br/> holder 7 which holds the laser bar fixing device 6 mentioned deposition source 10 and the leading into the chamber 8 deposited film thickness monitor There is.
【０００６】以下に、図１１、図１２を用いて成膜の手
順を説明する。レーザチップの両端面５ａ、５ｂに保護
膜を蒸着する場合、まず、ダクト９を通してチャンバ８
内を真空にする。そして所定の真空度に達した後、蒸着
源１０より蒸着材料を蒸発させてレーザの光出射端面５
ａに保護膜１２ａを蒸着する。蒸着完了後、引き続きホ
ルダ７を１８０°回転させ、レーザのもう一方の光出射
端面５ｂに保護膜１２ａを蒸着する。なお、蒸着は水晶
振動子１１にて膜厚をモニタしながら行い、所定の膜厚
に達した時点で蒸着を停止する。また、高出力タイプの
レーザの場合では、先に述べた手順とまったく同様、図
１３に示す通り、前面（主出射面）側の低反射保護膜１
２ａを成膜した後、引き続き後面側の高反射保護膜１３
の成膜を行う。The film forming procedure will be described below with reference to FIGS. 11 and 12. When depositing a protective film on both end surfaces 5a and 5b of the laser chip, first, the chamber 8 is passed through the duct 9.
Make a vacuum inside. Then, after reaching a predetermined degree of vacuum, the vapor deposition material is vaporized from the vapor deposition source 10 and the light emitting end face 5 of the laser is emitted.
A protective film 12a is deposited on a. After the vapor deposition is completed, the holder 7 is continuously rotated by 180 ° to deposit the protective film 12a on the other light emitting end face 5b of the laser. The vapor deposition is performed while monitoring the film thickness with the crystal oscillator 11, and the vapor deposition is stopped when the film thickness reaches a predetermined value. In the case of a high power type laser, the low reflection protective film 1 on the front surface (main emission surface) side is exactly the same as the procedure described above, as shown in FIG.
After forming 2a, the high reflection protection film 13 on the rear surface side is continuously formed.
Film is formed.
【０００７】[0007]
【発明が解決しようとする課題】前述した通り、レーザ
チップの端面保護膜を形成する場合、成膜材料が蒸着さ
れるまでの間、端面は露出したまま蒸着機の成膜室内で
加熱されることになる。真空度の高い条件下にあるとは
いえ、時間の経過と共に、端面は徐々に酸化等により劣
化し、レーザ素子としての信頼性は低下してしまう。特
に高出力レーザの場合、レーザ発振時の光出力は、一般
的な低出力レーザの光出力に比べて約５〜２０倍程度に
もなるため、光出射端面をなるべく早急に保護して酸化
等による劣化から守る必要がある。As described above, when forming the end face protective film of the laser chip, the end face is exposed and heated in the film forming chamber of the vapor deposition machine until the film forming material is vapor-deposited. It will be. Even under the condition of a high degree of vacuum, the end face is gradually deteriorated due to oxidation or the like with the passage of time, and the reliability as a laser element is deteriorated. Particularly in the case of a high-power laser, the light output during laser oscillation is about 5 to 20 times that of a general low-power laser. Therefore, the light emitting end face should be protected as soon as possible to oxidize it. It is necessary to protect from deterioration due to.
【０００８】[0008]
【課題を解決するための手段】本願発明は、一工程で
は、一端面保護膜しか形成できない成膜装置を用いて、
端面保護膜を一度に形成せず、少しずつ形成することに
より、劣化しやすい端面をできる限り露出しないことを
目的とするものである。The present invention uses a film forming apparatus capable of forming only a protective film on one end surface in one step.
The purpose of the present invention is to prevent the end surfaces that are apt to deteriorate from being exposed as much as possible by forming the end surface protective film little by little rather than forming them all at once.
【０００９】この発明（請求項１）に係る半導体レーザ
素子の製造方法は、ウェハを劈開することにより、レー
ザバーを形成する工程と、前記レーザバーの一方の劈開
端面に保護膜を形成する第１工程と、前記レーザバーの
他方の劈開端面に保護膜を形成する第２工程と、を少な
くとも有し、前記第１工程と、前記第２工程とを、順次
繰り返すことにより、所定の厚さの保護膜を得てなり、
前記第１工程は２回繰り返され、前記第２工程は１回目
の前記第１工程と２回目の前記第１工程との間に１回行
われ、前記１回目の第１工程で形成する保護膜の膜厚
を、前記第２工程で形成する保護膜の膜厚よりも薄くす
ることによって、上記目的を達成する。[0009] The method of manufacturing a semiconductor laser device according to the present invention (claim 1), by cleaving the wafer, and forming a laser bar, a first step of forming a protective film on one cleaved end face of the laser bar When, and a second step of forming a protective film on the other cleaved end face of the laser bar, at least, the a first step, a second step, by repeating sequentially predetermined thickness protective film the Ri name is obtained,
The first step is repeated twice, and the second step is the first time.
Once between the first step and the second step of
The thickness of the protective film formed in the first step of the first time
Is made thinner than the film thickness of the protective film formed in the second step, thereby achieving the above object.
【００１０】劈開によりウェハから分割形成したバー状
態の半導体レーザチップをバー固定用の治具に積層した
後、半導体レーザチップの劈開端面からなる光出射端面
に所定の反射率を有する保護膜を形成する際、両光出射
端面に所定の膜厚よりも薄い保護膜を交互に成膜し、最
終的に両光出射端面に所定の膜厚まで成膜を行うことに
より、劣化しやすい端面の露出時間を少なくすることが
可能になる。After the semiconductor laser chips in a bar state divided and formed from the wafer by cleavage are stacked on a jig for fixing the bar, a protective film having a predetermined reflectance is formed on the light emitting end face which is the cleavage end face of the semiconductor laser chip. At this time, the protective film thinner than a predetermined film thickness is alternately formed on both light emitting end faces, and finally the film is formed to a predetermined film thickness on both light emitting end faces, thereby exposing the end face which is easily deteriorated. It is possible to save time.
【００１１】このとき、片方の光出射端面に所定の膜厚
よりも薄い保護膜を形成した後、もう一方の光出射端面
に所定の膜厚まで成膜を行い、引き続き、先に成膜を行
った光出射端面に所定の膜厚まで成膜を行うものであ
る。[0011] At this time, after forming a thin protective film than the predetermined thickness on the light emitting end face of one performs deposition to a predetermined thickness anymore one light emitting end face, subsequently deposited above The film is formed to a predetermined film thickness on the light emitting end face subjected to the above.
【００１２】これによって、劣化しやすい端面の露出時
間を少なくすることをより最適に達成することが可能に
なる。As a result, it becomes possible to more optimally reduce the exposure time of the end surface which is likely to deteriorate.
【００１３】この発明（請求項２）に係る半導体レーザ
素子の製造方法は、前記第１工程と前記第２工程とが連
続的に繰り返されることを特徴とすることによって、上
記課題を解決する。The method for manufacturing a semiconductor laser device according to the present invention (claim 2 ) solves the above problems by being characterized in that the first step and the second step are continuously repeated.
【００１４】レーザバー固定用の治具を成膜の間、所定
の速度で常時回転させ、両光出射端面に所定の膜厚ま
で、成膜を行うものである。During the film formation, the jig for fixing the laser bar is constantly rotated at a predetermined speed to form a film on the both light emitting end faces up to a predetermined film thickness.
【００１５】これによって、さらに短時間にて、両光出
射端面を酸化等による劣化から保護することが可能にな
る。This makes it possible to protect both light emitting end faces from deterioration due to oxidation or the like in a shorter time.
【００１６】上述した請求項１、２のいずれかの半導体
レーザ素子の製造方法において、両方の光出射端面に所
定の膜厚の保護膜を形成した後、一方の光出射端面にの
み引き続いて多層成膜を行い、非対称な反射率を有する
保護膜を形成してもよい。本発明によれば、レーザ素子
の光出射端面の露出時間をより短くすることが可能にな
り、酸化等による端面劣化を抑えることが可能になる。In the method of manufacturing a semiconductor laser device according to any one of claims 1 and 2 , the protective film having a predetermined film thickness is formed on both of the light emitting end faces, and subsequently, only one of the light emitting end faces is continuously laminated. You may form a film and may form the protective film which has asymmetrical reflectance. According to the present invention, it is possible to further shorten the exposure time of the light emitting end face of the laser element, and it is possible to suppress the end face deterioration due to oxidation or the like.
【００１７】[0017]
【発明の実施の形態】本発明の半導体レーザ素子の製造
方法を、実施例に基づいて説明する前に、まず、本発明
の第１の参考例について説明する。BEST MODE FOR CARRYING OUT THE INVENTION Before describing a method for manufacturing a semiconductor laser device of the present invention based on embodiments , first, the present invention will be described.
A first reference example will be described .
【００１８】図１は上記参考例を示している。図１中、
Ａ１〜Ａ４は工程を追って蒸着機内を模式的に示したも
のであり、Ｂ１〜Ｂ４は工程を追ってレーザバーへの蒸
着の状態を示している。FIG. 1 shows the above reference example. In Figure 1,
A1 to A4 schematically show the inside of the vapor deposition machine in steps, and B1 to B4 show the state of vapor deposition on the laser bar in steps.
【００１９】まず、図１Ａ１に示すように、レーザバー
を積層したレーザバー固定用治具６を、レーザバー（レ
ーザチップ）の光出射端面５ａが蒸着源１０へ向くよう
に、蒸着機内のホルダ７へセットする。次に蒸着機のチ
ャンバ８をダクト９を通して排気する。所定の真空度に
達した時、蒸着源１０より蒸着材料を蒸発させ、成膜を
開始する。図１Ｂ１に示すように、光出射端面５ａに所
定の膜厚より薄い厚さｔ’の保護膜１２ａ’を成膜す
る。First, as shown in FIG. 1A1, a laser bar fixing jig 6 in which laser bars are laminated is set on a holder 7 in a vapor deposition machine so that a light emitting end face 5a of a laser bar (laser chip) faces a vapor deposition source 10. To do. Next, the chamber 8 of the vapor deposition machine is evacuated through the duct 9. When a predetermined degree of vacuum is reached, the evaporation material is evaporated from the evaporation source 10 and film formation is started. As shown in FIG. 1B1, a protective film 12a ′ having a thickness t ′ smaller than a predetermined film thickness is formed on the light emitting end surface 5a.
【００２０】引き続いて、図１Ａ２，Ｂ２に示すよう
に、ホルダ７を１８０°反転させてもう一方の光出射端
面５ｂへも同じように所定の膜厚より薄い厚さｔ’保護
膜１２ａ’を成膜させる。この後再びホルダ７を１８０
°反転させて、図１Ａ３，Ｂ３に示すように、光出射端
面５ａの保護膜１２ａ’の上へ追加成膜を行い、所定の
厚さｔの保護膜１２ａを成膜する。Subsequently, as shown in FIGS. 1A2 and 1B2, the holder 7 is turned over by 180 ° and a thickness t'protective film 12a 'thinner than a predetermined film thickness is similarly formed on the other light emitting end face 5b. Form a film. After this, the holder 7
By reversing the angle, as shown in FIGS. 1A3 and B3, additional film formation is performed on the protective film 12a ′ on the light emitting end face 5a to form the protective film 12a having a predetermined thickness t.
【００２１】次に再び成膜ホルダ７を１８０°反転させ
て、図１Ａ４，Ｂ４に示すように、もう一方の光出射端
面５ａの保護膜１２ａ’の上へ追加成膜を行い、所定の
厚さｔの保護膜１２ａを成膜する。Next, the film forming holder 7 is turned over again by 180 °, and as shown in FIGS. 1A4 and B4, an additional film is formed on the protective film 12a 'on the other light emitting end face 5a to a predetermined thickness. A protective film 12a having a thickness t is formed.
【００２２】このように、端面保護膜を小刻みに少しず
つ成膜することにより、一方の端面のみが長時間露出さ
れることがなくなり、レーザの信頼性が向上する。By thus forming the end face protective film little by little, only one end face is not exposed for a long time, and the reliability of the laser is improved.
【００２３】本発明の第１の実施例を図２に示す。A first embodiment of the present invention is shown in FIG.
【００２４】まず、図２Ａ１に示すように、レーザバー
を積層したレーザバー固定用治具６をレーザバー（レー
ザチップ)の光出射端面５ａが蒸着源１０へ向くよう
に、蒸着機内のホルダ７へセットする。First, as shown in FIG. 2A1, a jig 6 for fixing a laser bar in which laser bars are laminated is set in a holder 7 in a vapor deposition machine so that a light emitting end face 5a of the laser bar (laser chip) faces the vapor deposition source 10. .
【００２５】次に、蒸着機のチャンバ８をダクト９を通
して排気する。所定の真空度に達した後、蒸着源１０よ
り蒸着材料を蒸着させ、図２Ｂ１に示すように、光出射
端面５ａに所定の膜厚より薄い厚さｔ’の保護膜１２
ａ’を成膜する。引き続いて図２Ａ２Ｂ２に示すよう
に、ホルダ７を１８０°反転させて、もう一方の光出射
端面５ｂへは所定の膜厚ｔの保護膜１２ａを成膜させ
る。この後、再びホルダ７を１８０°反転させて、図２
Ａ３Ｂ３に示すように、光出射端面５ａの保護膜１２
ａ’の上へ追加成膜を行い、所定の厚さｔの保護膜を成
膜する。Next, the chamber 8 of the vapor deposition machine is evacuated through the duct 9. After reaching a predetermined vacuum degree, a vapor deposition material is vapor-deposited from the vapor deposition source 10, and as shown in FIG. 2B1, a protective film 12 having a thickness t ′ smaller than a predetermined film thickness is formed on the light emitting end face 5a.
Form a '. Subsequently, as shown in FIG. 2A2B2, the holder 7 is turned over by 180 °, and the protective film 12a having a predetermined film thickness t is formed on the other light emitting end surface 5b. After this, the holder 7 is turned over again by 180 °, and
As shown in A3B3, the protective film 12 on the light emitting end face 5a is formed.
An additional film is formed on a ', and a protective film having a predetermined thickness t is formed.
【００２６】第２の実施例を図３に示す。The second embodiment is shown in FIG.
【００２７】まず、図３Ａに示すように、レーザバーを
積層したレーザバー固定用治具６を、レーザバー（レー
ザチップ）の光出射端面５ａ又は５ｂが蒸着源１０に向
くように、蒸着機内のホルダ７へセットする。First, as shown in FIG. 3A, a laser bar fixing jig 6 having laser bars stacked is placed in a holder 7 in a vapor deposition machine so that the light emitting end surface 5a or 5b of the laser bar (laser chip) faces the vapor deposition source 10. Set to.
【００２８】次に、蒸着機のチャンバ８をダクト９を通
して排気する。所定の真空度に達したとき、蒸着源１０
より蒸着材料を蒸発させ、成膜を開始するが、この時レ
ーザバー固定用治具をセットしているホルダ７の回転１
００も同時に開始する。Next, the chamber 8 of the vapor deposition machine is evacuated through the duct 9. When a predetermined vacuum degree is reached, the vapor deposition source 10
The evaporation material is further evaporated to start film formation. At this time, rotation of the holder 7 in which the jig for fixing the laser bar is set 1
00 also starts at the same time.
【００２９】この回転は蒸着開始から終了までの間、常
に任意の速度で行われる。即ち、蒸着が行われている
間、ある間隔でレーザの両光出射端面５ａ、５ｂが交互
に蒸着源１０側へ向くことになる。This rotation is always performed at an arbitrary speed from the start to the end of vapor deposition. That is, both the light emitting end faces 5a and 5b of the laser are alternately turned toward the vapor deposition source 10 side at a certain interval during the vapor deposition.
【００３０】このように回転させることにより、図３Ｂ
に示すとおり両光出射端面５ａ，５ｂを保護膜１２ａに
よって、ほぼ同時に保護することが可能になる。By rotating in this way, FIG.
As shown in FIG. 5, both light emitting end faces 5a and 5b can be protected almost simultaneously by the protective film 12a.
【００３１】ここで、本発明の膜厚制御方法について説
明する。保護膜１２ａの所望膜厚をｔ、装置設定する膜
厚をＴ、蒸着係数をαとすると、本発明による手法で
は、原理的にα＝２であるため、
Ｔ＝ｔ×α＝ｔ×２
となる。しかしながら、回転のため成膜に寄与しない時
間もあるため、回転速度により実際にはαは２を超えた
値を取ることが望ましい。例えばｔ＝２２００Å、α＝
３．０の場合、ＴはＴ＝２２００Å×３．０＝６６００
Åとなる。即ち、この場合には、水晶振動子１１にてモ
ニタしている膜厚が６６００Åとなった時点で蒸着を終
了させればよい。Here, the film thickness control method of the present invention will be described. Assuming that the desired film thickness of the protective film 12a is t, the film thickness set by the apparatus is T, and the vapor deposition coefficient is α, in the method according to the present invention, α = 2 in principle, so T = t × α = t × 2 Becomes However, since there is a time that does not contribute to film formation due to rotation, it is desirable that α actually takes a value exceeding 2 depending on the rotation speed. For example, t = 2200Å, α =
In the case of 3.0, T is T = 2200Å × 3.0 = 6600
It becomes Å. That is, in this case, the vapor deposition may be terminated when the film thickness monitored by the crystal unit 11 reaches 6600Å.
【００３２】第３の実施例を図４に示す。A third embodiment is shown in FIG.
【００３３】本実施例は先に述べた高出力タイプ（非対
称反射率）のレーザチップへ保護膜を形成する場合に用
いられるものである。図４Ａ１，Ｂ１に示す通り、まず
両光出射端面５ａ，５ｂの保護膜１２ａを上記第１、第
２の実施例で述べたいずれかの方法で形成する。This embodiment is used when forming a protective film on the above-mentioned high-power type (asymmetrical reflectance) laser chip. As shown in FIGS. 4A1 and 4A, first, the protective films 12a on both the light emitting end faces 5a and 5b are formed on the first and
It is formed by any of the methods described in the second embodiment.
【００３４】次に、この両端面の保護膜１２ａの蒸着が
完了すると同時に、図４Ａ２に示す通り、レーザチップ
の後面側光出射端面５ｂが蒸着源１０側へ向くようにす
る。これにより、図４Ｂ２のごとく、後面側第２、４層
のアモルファスＳｉ膜１３ｂ、及び第３、５層のＡｌ2
Ｏ3膜１３ａ，１３ｃを蒸着により形成する。Next, at the same time when the vapor deposition of the protective films 12a on both end faces is completed, the rear side light emitting end face 5b of the laser chip faces the vapor deposition source 10 side as shown in FIG. 4A2. As a result, as shown in FIG. 4B2, the rear surface side second and fourth layers of the amorphous Si film 13b and the third and fifth layers of Al 2
The O 3 films 13a and 13c are formed by vapor deposition.
【００３５】この時、後面側の第２層以降の蒸着は、蒸
着機内のホルダ７の反転又は回転が停止した状態で行わ
れる。At this time, the vapor deposition of the second and subsequent layers on the rear surface side is performed in a state where the holder 7 in the vapor deposition machine is not inverted or rotated.
【００３６】[0036]
【発明の効果】本発明によって、より短時間で半導体チ
ップの両光出射端面に保護膜を形成することが可能にな
るため、酸化等によるレーザチップの端面劣化を抑える
ことが可能となり、レーザ素子の信頼性が大きく向上す
る。According to the present invention, since it is possible to form a protective film on both light emitting end faces of a semiconductor chip in a shorter time, it is possible to suppress the end face deterioration of the laser chip due to oxidation or the like, and the laser element. Greatly improves the reliability of.
【図１】本発明の参考例を説明するための図である。FIG. 1 is a diagram for explaining a reference example of the present invention.
【図２】本発明の第１の実施例を説明するための図であ
る。FIG. 2 is a diagram for explaining the first embodiment of the present invention.
【図３】本発明の第２の実施例を説明するための図であ
る。FIG. 3 is a diagram for explaining a second embodiment of the present invention.
【図４】本発明の第３の実施例を説明するための図であ
る。FIG. 4 is a diagram for explaining a third embodiment of the present invention.
【図５】従来例を示す図である。FIG. 5 is a diagram showing a conventional example.
【図６】従来例を示す図である。FIG. 6 is a diagram showing a conventional example.
【図７】従来例を示す図である。FIG. 7 is a diagram showing a conventional example.
【図８】従来例を示す図である。FIG. 8 is a diagram showing a conventional example.
【図９】従来例を示す図である。FIG. 9 is a diagram showing a conventional example.
【図１０】従来例を示す図である。FIG. 10 is a diagram showing a conventional example.
【図１１】従来例を示す図である。FIG. 11 is a diagram showing a conventional example.
【図１２】従来例を示す図である。FIG. 12 is a diagram showing a conventional example.
【図１３】従来例を示す図である。FIG. 13 is a diagram showing a conventional example.
５ レーザバー ５ａ，５ｂ 光出射端面 ６ レーザバー固定用治具 ７ ホルダ ８ チャンバ ９ ダクト １０ 蒸着源 １１ 水晶振動子 １２ａ，１２ａ’，１２ｂ，１２ｂ’ 保護膜 １３ａ，１３ｃ Ａｌ2Ｏ3膜 １３ｂ アモルファスＳｉ膜5 laser bar 5a, 5b beam emitting end face 6 laser bar fixing jig 7 holders 8 chamber 9 duct 10 evaporation source 11 quartz oscillator 12a, 12a ', 12b, 12b ' protective film 13a, 13c Al 2 O 3 film 13b amorphous Si film
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平９−186396（ＪＰ，Ａ) 特開 平９−275239（ＪＰ，Ａ) 特開 平４−369885（ＪＰ，Ａ) 特開 平６−232496（ＪＰ，Ａ) 特開 昭54−126488（ＪＰ，Ａ) 特開 平４−294589（ＪＰ，Ａ) 特開 昭59−6373（ＪＰ，Ａ) 特開 平９−83072（ＪＰ，Ａ) 特開 平３−49281（ＪＰ，Ａ) 特開 昭60−77480（ＪＰ，Ａ) 特開 昭53−142197（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continued front page (56) References JP-A-9-186396 (JP, A) JP-A-9-275239 (JP, A) JP-A-4-369885 (JP, A) JP-A-6-232496 (JP, A) JP-A-54-126488 (JP, A) JP-A-4-294589 (JP, A) JP-A-59-6373 (JP, A) JP-A-9-83072 (JP, A) JP-A-3-49281 (JP, A) JP-A-60-77480 (JP, A) JP-A-53-142197 (JP, A)
Claims (2)
ーを形成する工程と、前記 レーザバーの一方の劈開端面に保護膜を形成する第
１工程と、前記 レーザバーの他方の劈開端面に保護膜を形成する第
２工程と、を少なくとも有し、 前記第１工程と、前記第２工程とを、順次繰り返すこと
により、所定の厚さの保護膜を得てなり、 前記第１工程は２回繰り返され、前記第２工程は１回目
の前記第１工程と２回目の前記第１工程との間に１回行
われ、 前記１回目の第１工程で形成する保護膜の膜厚を、前記
第２工程で形成する保護膜の膜厚よりも薄くす ることを
特徴とする半導体レーザ素子の製造方法。By cleaving the 1. A wafer, to form a step of forming a laser bar, a first step of forming a protective film on one cleaved end face of the laser bar, the protective film on the other cleaved end face of the laser bar a least a second step, and a first step and the second step, by repeating in sequence, Ri Na to give a predetermined thickness protective film, the first step is repeated twice , The second step is the first time
Once between the first step and the second step of
We, the thickness of the protective film formed at the first first step, the
A method of manufacturing a semiconductor laser device, characterized in that the thickness is made thinner than the thickness of the protective film formed in the second step .
に繰り返されることを特徴とする請求項１に記載の半導
体レーザ素子の製造方法。2. The method of manufacturing a semiconductor laser device according to claim 1, wherein the first step and the second step are continuously repeated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08308498A JP3509543B2 (en) | 1998-03-30 | 1998-03-30 | Method for manufacturing semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08308498A JP3509543B2 (en) | 1998-03-30 | 1998-03-30 | Method for manufacturing semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11284279A JPH11284279A (en) | 1999-10-15 |
| JP3509543B2 true JP3509543B2 (en) | 2004-03-22 |
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ID=13792325
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08308498A Expired - Fee Related JP3509543B2 (en) | 1998-03-30 | 1998-03-30 | Method for manufacturing semiconductor laser device |
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| JP (1) | JP3509543B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3784639B2 (en) | 2000-11-28 | 2006-06-14 | シャープ株式会社 | Semiconductor laser end face coating method and fixed frame |
| JP2002164609A (en) | 2000-11-28 | 2002-06-07 | Sharp Corp | Semiconductor laser element and its manufacturing method |
| JP4844993B2 (en) * | 2001-05-14 | 2011-12-28 | 古河電気工業株式会社 | Laser bar holding device |
| JP2003209318A (en) | 2001-11-12 | 2003-07-25 | Sharp Corp | Semiconductor laser element and manufacturing method thereof |
| JP2003198044A (en) | 2001-12-27 | 2003-07-11 | Sharp Corp | Semiconductor laser element and manufacturing method thereof, and laser bar-fixing apparatus |
| JP2005187114A (en) * | 2003-12-25 | 2005-07-14 | Shibaura Mechatronics Corp | Vacuum treatment device |
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1998
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| Publication number | Publication date |
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