JP3503366B2 - Ion source device - Google Patents
Ion source deviceInfo
- Publication number
- JP3503366B2 JP3503366B2 JP30116896A JP30116896A JP3503366B2 JP 3503366 B2 JP3503366 B2 JP 3503366B2 JP 30116896 A JP30116896 A JP 30116896A JP 30116896 A JP30116896 A JP 30116896A JP 3503366 B2 JP3503366 B2 JP 3503366B2
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- hole
- extraction
- current density
- view
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010884 ion-beam technique Methods 0.000 claims description 47
- 238000000605 extraction Methods 0.000 claims description 38
- 238000009826 distribution Methods 0.000 description 21
- 239000000758 substrate Substances 0.000 description 16
- 238000003780 insertion Methods 0.000 description 8
- 230000037431 insertion Effects 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 241000755266 Kathetostoma giganteum Species 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Description
【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、プラズマよりイオ
ンビームを引き出す複数個の引出孔を形成した多孔式電
極を有するイオン源装置に関する。
【０００２】
【従来の技術】従来、面イオンビームを引き出すイオン
源装置において、イオンビームの電流密度の分布をコン
トロールする場合、多孔式電極の引出孔の孔配置を不均
一にする方法が採られることがあり、、希望するイオン
ビーム電流密度に応じて、イオンビーム電流密度を低く
したい箇所の孔数を減らしている。
【０００３】しかし、図７に示すように、プラズマ密度
が不均一で、かつ、イオンビームの発散角が小さい場
合、この方法では対処が困難になる。
【０００４】即ち、イオンビームの発散角が小さい場
合、基板上での各引出孔からのイオンビームの重なりは
小さく、このような場合に、イオンビームの電流密度の
高い部分に相当する中心部の引出孔を減らすことは、イ
オンビームがほとんど照射されない部分を生じさせる結
果になる。
【０００５】そこで、多孔式電極の各引出孔の孔径をイ
オン源装置のプラズマ密度に応じて設定し、必要なイオ
ンビーム分布を得ることが考えられる。
【０００６】
【発明が解決しようとする課題】しかし、多孔式電極の
各引出孔の孔径をあるプラズマ密度に応じて設定した場
合、設計範囲外の運転或いはプラズマ密度の大きな変
更、また基板の形状等によって所望のイオンビームの電
流密度の分布を得たい時など、前記電極では対応でき
ず、それぞれに対応した電極を設計し、その都度電極を
交換する必要があり、煩雑であるとともに、コスト高に
なるという問題点がある。
【０００７】本発明は、前記の点に留意し、プラズマ密
度の分布が不均一で、かつ、イオンビームの発散角が小
さい場合でも、基板上にイオンビームがほとんど照射さ
れない部分を生じることなく、電極の交換なしに簡単に
イオンビームの電流密度の分布をコントロールすること
ができ、所望の分布が得られる安価なイオン源装置を提
供することを目的とする。
【０００８】
【課題を解決するための手段】前記課題を解決するため
に、本発明のイオン源装置は、プラズマを生成する筐体
と、前記プラズマよりイオンビームを引き出す複数個の
引出孔を形成した多孔式電極とを備えたイオン源装置に
おいて、前記各引出孔の内，一部または全部に、前記引
出孔の孔面積を減少させる，前記引出孔の孔面積より小
さな孔面積を有する部材を配置したものである。
【０００９】したがって、多孔式電極の１個の引出孔か
ら引き出されるイオンビーム量は、プラズマ密度，プラ
ズマへの電界，プラズマに接する電極の孔面積によって
決まるため、イオンビーム電流密度を小さくしたい箇所
に引出孔の面積より小さな孔面積を有する部材を配置す
ることにより、イオンビーム量が減少し、結果として局
所的に基板上、即ちイオンビームを必要とするところの
イオンビーム電流密度が減少することになり、引出孔の
孔数を減らす場合と異なり、プラズマ密度の分布が不均
一で、かつ、イオンビームの発散角が小さい場合でも、
基板上にイオンビームがほとんど照射されない部分を生
じることなく、簡単に基板上のイオンビームの電流密度
の分布をコントロールすることができる。
【００１０】また、運転条件によってプラズマ密度の分
布が変化した場合、この変化に応じて部材の孔面積を変
化させることにより、簡単に基板上でのイオンビーム電
流密度の分布を一定に保つことができる。
【００１１】さらに、基板上でのイオンビーム電流密度
を意図的に変えたい場合、部材を交換し、引出孔の孔面
積を変化させ、基板上でのイオンビーム電流密度を簡単
にコントロールすることができ、所望のイオンビーム電
流密度の分布を得ることができる。
【００１２】その上、イオンビーム電流密度のコントロ
ールに際し、引出孔に安価な部材を配置するだけでよ
く、高価な多孔式電極を交換する必要がないため、コス
トが大幅に低減される。
【００１３】
【発明の実施の形態】実施の形態につき、図１ないし図
５を参照して説明する。
（形態１）まず、形態１につき、一部の断面図及びその
一部の平面図の図１Ａ，Ｂを参照して説明する。同図に
おいて、１は筐体内のプラズマからイオンビームを引き
出す引出電極系の多孔式電極であり、モリブテン，アル
ミ或いは銅からなる。２は電極１に形成された複数個の
引出孔、３は電極１と同様モリブテン，アルミ或いは銅
などからなる孔径が２mmφの部材であり、筒部４と、筒
部４の端部の鍔部５とからなり、筒部４の孔面積は電極
１の円形の引出孔２の孔面積より小さく、電極１の引出
孔２に筒部４が嵌め合わされて挿入され、引出孔２の周
縁部に鍔部５が当接し、部材３により引出孔２の孔面積
を減少させている。
【００１４】つぎに実施例について説明する。口径が４
００mmφで、すべてが４mmφの引出孔２が６mm間隔の碁
盤の目の位置に均等に配置された電極１を用い、電極１
の周縁部以外の各引出孔２にそれぞれ孔径の異なる部材
３を設け、図７に示すプラズマ密度分布に対応して〔部
材の孔面積×プラズマ密度〕が一定となるよう各部材の
孔径を選び、イオンビーム加速電圧を４０kVとし、引出
電極系から２５０mmの位置のイオンビームの電流密度を
測定した結果、３５０mmφ内でイオンビームの電流密度
の分布が±１５％で、基板上のイオンビームの電流密度
の分布がほぼ均一になっていた。この時の電極１の中心
部の部材の孔径は２mmφであった。
【００１５】なお、部材３を嵌め合わさない電極１を用
いて、前記実施例と同じ条件でイオンビームの電流密度
の測定を行った結果、イオンビームの電流密度は、図７
に示す不均一なプラズマ密度の分布に近い形であり、基
板の中心部のイオンビームの電流密度の分布が高く、周
縁部が低くなっている。
【００１６】（形態２）つぎに形態２につき、一部の断
面図及びその一部の平面図の図２Ａ，Ｂを参照して説明
する。同図において、６は電極１の引出孔２の周縁部に
形成された円形の嵌合溝、７は部材であり、円板部８
と、円板部８の周縁部に突設された円形の嵌合部９とか
らなり、嵌合溝６に嵌合部９が嵌め合わされ、引出孔２
の周縁部に円板部８が当接している。
【００１７】（形態３）つぎに形態３につき、一部の断
面図及びその一部の平面図の図３Ａ，Ｂにおいて、１０
は筒部のみからなる部材であり、部材１０の全部が引出
孔２に嵌め合わされている。
【００１８】（形態４）つぎに形態４につき、一部の断
面図及びその平面図の図４Ａ，Ｂにおいて、１１は電極
１に形成された楕円形のスリット、１２は部材であり、
断面が楕円形の挿入部１３と、挿入部１３の端部の鍔部
１４とからなり、スリット１１に挿入部１３が挿入さ
れ、鍔部１４がスリット１１の周縁部に当接し、部材１
２がスリット１１に嵌め合わされている。
【００１９】（形態５）つぎに形態５につき、一部の断
面図及びその平面図の図５Ａ，Ｂにおいて、１５は電極
１の円形の引出孔２の周縁部に等間隔に形成された４個
の螺孔、１６は筒部１７と鍔部１８とからなる部材、１
９は鍔部１８の周縁部に等間隔に形成された４個の挿通
孔、２０は挿通孔１９の端部に形成されたさら孔、２１
はさら孔２０及び挿通孔１９に挿通されたさらねじであ
り、螺孔１５に螺合し、引出孔２に部材１６を装着して
いる。
【００２０】（形態６）つぎに形態６につき、一部の断
面図の図６において、ドーナツ状の部材であり、前記形
態５と同様に、周縁部に挿通孔１９，さら孔２０が形成
され、挿通孔１９にさらねじ２１を挿通し、引出孔２の
周縁部の螺孔１５に螺合し、引出孔２に部材２２を装着
している。
【００２１】なお、前記各形態の部材を、嵌め合わせ或
いはさらねじにより引出孔に装着しているが、導電性の
接着剤を使用して装着するようにしてもよく、この場
合、熱又は溶剤により接着剤を溶かして部材を引出孔か
ら取り出す。
【００２２】また、電極が複数の場合、プラズマ室側の
電極のみに部材を装着するだけでもよい。
【００２３】さらに、プラズマ生成の手段は、直流放
電，高周波放電，マイクロ波放電等、放電の方式は問わ
ない。また、電極構成も多孔式電極であれば、電極の構
成枚数，材質等も問わない。
【００２４】
【発明の効果】本発明は、以上説明したように構成され
ているため、つぎに記載する効果を奏する。本発明のイ
オン源装置は、多孔式電極１の引出孔の内，一部または
全部に、引出孔の孔面積を減少させる，引出孔の孔面積
より小さな孔面積を有する部材を配置したため、イオン
ビーム電流密度を小さくしたい箇所のイオンビーム量が
減少し、結果として局所的に基板上、即ちイオンビーム
を必要とするところのイオンビーム電流密度が減少する
ことになり、引出孔の孔数を減らす場合と異なり、プラ
ズマ密度の分布が不均一で、かつ、イオンビームの発散
角が小さい場合でも、基板上にイオンビームが全んど照
射されない部分を生じることなく、簡単に基板上のイオ
ンビームの電流密度の分布をコントロールすることがで
きる。
【００２５】また、運転条件によってプラズマ密度の分
布が変化した場合、この変化に応じて部材の孔面積を変
化させることにより、簡単に基板上でのイオンビーム電
流密度の分布を一定に保つことができる。
【００２６】さらに、基板上でのイオンビーム電流密度
を意図的に変えたい場合、部材を交換し、引出孔の孔面
積を変化させ、基板上でのイオンビーム電流密度を簡単
にコントロールすることができ、所望のイオンビーム電
流密度の分布を得ることができる。
【００２７】その上、イオンビーム電流密度のコントロ
ールに際し、引出孔に安価な部材を配置するだけでよ
く、高価な多孔式電極を交換する必要がないため、コス
トを大幅に低減することができる。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion source device having a porous electrode having a plurality of extraction holes for extracting an ion beam from plasma. 2. Description of the Related Art Conventionally, in an ion source device for extracting a surface ion beam, when controlling the current density distribution of the ion beam, a method of making the arrangement of the extraction holes of the porous electrode non-uniform is adopted. In some cases, the number of holes at a place where the ion beam current density is desired to be reduced is reduced according to a desired ion beam current density. However, as shown in FIG. 7, when the plasma density is not uniform and the divergence angle of the ion beam is small, it is difficult to cope with this method. That is, when the divergence angle of the ion beam is small, the overlap of the ion beams from the respective extraction holes on the substrate is small, and in such a case, the central portion corresponding to the portion where the current density of the ion beam is high is high. Reducing the extraction holes results in portions that are hardly irradiated by the ion beam. Therefore, it is conceivable to obtain the required ion beam distribution by setting the diameter of each extraction hole of the porous electrode in accordance with the plasma density of the ion source device. However, when the diameter of each of the extraction holes of the porous electrode is set according to a certain plasma density, operation outside the design range or a large change in the plasma density, and the shape of the substrate, For example, when it is desired to obtain a desired current density distribution of the ion beam by the above method, the above-mentioned electrodes cannot be used, and the corresponding electrodes need to be designed, and the electrodes need to be replaced each time, which is complicated and costly. There is a problem that becomes. The present invention has been made in consideration of the above points, and does not generate a portion on the substrate where the ion beam is hardly irradiated, even if the distribution of the plasma density is uneven and the divergence angle of the ion beam is small. It is an object of the present invention to provide an inexpensive ion source device that can easily control the current density distribution of an ion beam without replacing electrodes and can obtain a desired distribution. [0008] In order to solve the above-mentioned problems, an ion source device according to the present invention has a housing for generating plasma and a plurality of extraction holes for extracting an ion beam from the plasma. In the ion source device provided with a porous electrode, a member having a hole area smaller than the hole area of the extraction hole, which reduces the hole area of the extraction hole, is provided in part or all of the extraction holes. It is arranged. Therefore, the amount of the ion beam extracted from one extraction hole of the porous electrode is determined by the plasma density, the electric field to the plasma, and the hole area of the electrode in contact with the plasma. By arranging a member having a hole area smaller than the area of the extraction hole, the amount of the ion beam is reduced, and as a result, the ion beam current density locally on the substrate, that is, where the ion beam is required, is reduced. Unlike the case of reducing the number of extraction holes, even if the plasma density distribution is uneven and the divergence angle of the ion beam is small,
The distribution of the current density of the ion beam on the substrate can be easily controlled without generating a portion on the substrate where the ion beam is hardly irradiated. Further, when the distribution of the plasma density changes due to the operating conditions, the distribution of the ion beam current density on the substrate can be easily kept constant by changing the hole area of the member in accordance with the change. it can. Further, when it is desired to intentionally change the ion beam current density on the substrate, it is possible to easily control the ion beam current density on the substrate by changing members, changing the area of the extraction holes. As a result, a desired ion beam current density distribution can be obtained. In addition, when controlling the ion beam current density, it is only necessary to dispose an inexpensive member in the extraction hole, and it is not necessary to replace an expensive porous electrode, so that the cost is greatly reduced. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment will be described with reference to FIGS. (Embodiment 1) First, Embodiment 1 will be described with reference to FIGS. 1A and 1B which are a partial cross-sectional view and a partial plan view thereof. In FIG. 1, reference numeral 1 denotes a porous electrode of an extraction electrode system for extracting an ion beam from plasma in a housing, and is made of molybdenum, aluminum, or copper. Reference numeral 2 denotes a plurality of extraction holes formed in the electrode 1. Reference numeral 3 denotes a member having a hole diameter of 2 mmφ made of molybdenum, aluminum, copper, or the like, like the electrode 1, and includes a cylindrical portion 4 and a flange portion at an end of the cylindrical portion 4. 5, the hole area of the cylindrical portion 4 is smaller than the hole area of the circular extraction hole 2 of the electrode 1, and the cylindrical portion 4 is fitted and inserted into the extraction hole 2 of the electrode 1. The flange portion 5 is in contact with the member 3 and the hole area of the drawing hole 2 is reduced by the member 3. Next, an embodiment will be described. 4 caliber
An electrode 1 was used in which 00 mmφ and all 4 mmφ extraction holes 2 were evenly arranged at grid positions at 6 mm intervals.
A member 3 having a different hole diameter is provided in each of the extraction holes 2 other than the peripheral edge of the member, and the hole diameter of each member is selected so that [hole area of member × plasma density] becomes constant corresponding to the plasma density distribution shown in FIG. When the ion beam acceleration voltage was set to 40 kV and the current density of the ion beam at a position 250 mm from the extraction electrode system was measured, the current density distribution of the ion beam within 350 mmφ was ± 15%, and the current of the ion beam on the substrate was The density distribution was almost uniform. At this time, the hole diameter of the central member of the electrode 1 was 2 mmφ. When the current density of the ion beam was measured under the same conditions as in the above embodiment using the electrode 1 on which the member 3 was not fitted, the current density of the ion beam was as shown in FIG.
The current density distribution of the ion beam at the center of the substrate is high and the peripheral edge is low. (Embodiment 2) Next, Embodiment 2 will be described with reference to FIGS. 2A and 2B which are a partial sectional view and a partial plan view. In the drawing, reference numeral 6 denotes a circular fitting groove formed in the peripheral portion of the extraction hole 2 of the electrode 1;
And a circular fitting portion 9 protruding from the periphery of the disk portion 8. The fitting portion 9 is fitted into the fitting groove 6, and the drawing hole 2 is formed.
The disc 8 is in contact with the peripheral portion of the disc. (Embodiment 3) Next, according to Embodiment 3, in FIGS. 3A and 3B of a partial cross-sectional view and a partial plan view thereof, FIG.
Is a member consisting only of a cylindrical portion, and the whole of the member 10 is fitted into the drawing hole 2. (Embodiment 4) Next, according to Embodiment 4, in FIGS. 4A and 4B of a partial sectional view and a plan view thereof, 11 is an elliptical slit formed in the electrode 1, 12 is a member,
The insertion portion 13 has an elliptical cross section and a flange portion 14 at the end of the insertion portion 13. The insertion portion 13 is inserted into the slit 11, and the flange portion 14 contacts the peripheral edge of the slit 11, and
2 is fitted in the slit 11. (Embodiment 5) Next, regarding Embodiment 5, in FIGS. 5A and 5B, which are a partial cross-sectional view and a plan view thereof, reference numeral 15 denotes an electrode 4 formed at the periphery of the circular extraction hole 2 of the electrode 1 at equal intervals. The screw holes 16 are members formed of a cylindrical portion 17 and a flange portion 18,
Reference numeral 9 denotes four insertion holes formed at equal intervals in a peripheral portion of the flange portion 18, reference numeral 20 denotes a countersunk hole formed at an end of the insertion hole 19,
Is a countersunk screw inserted into the countersunk hole 20 and the insertion hole 19, is screwed into the screw hole 15, and the member 16 is attached to the extraction hole 2. (Embodiment 6) Next, Embodiment 6 is a donut-shaped member in FIG. 6 which is a partial cross-sectional view, and an insertion hole 19 and a counterbore 20 are formed in the peripheral edge portion in the same manner as in Embodiment 5. Threaded screw 21 is inserted through insertion hole 19, screwed into screw hole 15 at the peripheral edge of extraction hole 2, and member 22 is attached to extraction hole 2. Although the above-mentioned members are mounted in the draw-out holes by fitting or flathead screws, they may be mounted using a conductive adhesive, in which case, heat or solvent may be used. And the member is taken out of the drawing hole. When there are a plurality of electrodes, the members may be mounted only on the electrodes on the plasma chamber side. Further, the means of plasma generation may be any type of discharge such as direct current discharge, high frequency discharge, microwave discharge and the like. Further, as long as the electrode configuration is a porous electrode, the number of electrodes, the material, and the like are not limited. The present invention is configured as described above, and has the following effects. In the ion source device of the present invention, a member that reduces the hole area of the extraction hole and has a smaller hole area than the extraction hole is disposed in some or all of the extraction holes of the porous electrode 1. The amount of ion beam at the place where the beam current density is desired to be reduced is reduced, and as a result, the ion beam current density locally on the substrate, that is, where the ion beam is required, is reduced, and the number of extraction holes is reduced. Unlike the case, even when the plasma density distribution is uneven and the divergence angle of the ion beam is small, the ion beam on the substrate can be easily The distribution of the current density can be controlled. When the distribution of the plasma density changes due to the operating conditions, the distribution of the ion beam current density on the substrate can be easily kept constant by changing the hole area of the member in accordance with the change. it can. Further, when it is desired to intentionally change the ion beam current density on the substrate, it is possible to easily control the ion beam current density on the substrate by changing members, changing the hole area of the extraction hole. As a result, a desired ion beam current density distribution can be obtained. In addition, when controlling the ion beam current density, it is only necessary to arrange an inexpensive member in the extraction hole, and it is not necessary to replace an expensive porous electrode, so that the cost can be greatly reduced.
【図面の簡単な説明】
【図１】Ａは本発明の実施の形態１の一部の断面図、Ｂ
はＡの一部の平面図である。
【図２】Ａは本発明の実施の形態２の一部の断面図、Ｂ
はＡの一部の平面図である。
【図３】Ａは本発明の実施の形態３の一部の断面図、Ｂ
はＡの一部の平面図である。
【図４】Ａは本発明の実施の形態４の一部の断面図、Ｂ
はＡの平面図である。
【図５】Ａは本発明の実施の形態５の一部の断面図、Ｂ
はＡの平面図である。
【図６】本発明の実施の形態６の一部の断面図である。
【図７】プラズマ密度の分布を示した図である。
【符号の説明】
１ 多孔式電極
２ 引出孔
３ 部材
７ 部材
１０ 部材
１２ 部材
１６ 部材
２２ 部材BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A is a partial sectional view of Embodiment 1 of the present invention, and FIG.
3 is a plan view of a part of A. FIG. FIG. 2A is a partial cross-sectional view of Embodiment 2 of the present invention, and FIG.
3 is a plan view of a part of A. FIG. FIG. 3A is a partial cross-sectional view of Embodiment 3 of the present invention, and FIG.
3 is a plan view of a part of A. FIG. FIG. 4A is a partial cross-sectional view of Embodiment 4 of the present invention, and FIG.
2 is a plan view of A. FIG. FIG. 5A is a partial cross-sectional view of Embodiment 5 of the present invention, and FIG.
2 is a plan view of A. FIG. FIG. 6 is a partial cross-sectional view of Embodiment 6 of the present invention. FIG. 7 is a diagram showing a distribution of plasma density. [Description of Signs] 1 porous electrode 2 extraction hole 3 member 7 member 10 member 12 member 16 member 22 member
───────────────────────────────────────────────────── フロントページの続き (72)発明者 江部 明憲 京都市右京区梅津高畝町47番地 日新電 機株式会社内 (72)発明者 緒方 潔 京都市右京区梅津高畝町47番地 日新電 機株式会社内 (56)参考文献 特開 平６−223760（ＪＰ，Ａ) 特開 平２−152150（ＪＰ，Ａ) 特開 平８−129982（ＪＰ，Ａ) 実開 昭62−175559（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01J 27/02 ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Akinori Ebe 47, Umezu Takaune-cho, Ukyo-ku, Kyoto Nichidenki Co., Ltd. (72) Inventor Kiyoshi Ogata 47, Umezu Takaune-cho, Ukyo-ku, Kyoto Nissin Electric Machinery In-company (56) References JP-A-6-223760 (JP, A) JP-A-2-152150 (JP, A) JP-A 8-129,982 (JP, A) JP-A-62-175559 (JP, U.S.A.) (58) Fields surveyed (Int. Cl. 7 , DB name) H01J 27/02
Claims (1)
孔を形成した多孔式電極とを備えたイオン源装置におい
て、 前記引出孔の内，一部または全部に、前記引出孔の孔面
積を減少させる，前記引出孔の孔面積より小さな孔面積
を有する部材を配置したことを特徴とするイオン源装
置。(57) Claims 1. An ion source device comprising: a housing for generating plasma; and a porous electrode having a plurality of extraction holes for extracting an ion beam from the plasma. An ion source device, wherein a member having a hole area smaller than the hole area of the extraction hole, which reduces the hole area of the extraction hole, is arranged in some, all, or all of the extraction holes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30116896A JP3503366B2 (en) | 1996-10-25 | 1996-10-25 | Ion source device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30116896A JP3503366B2 (en) | 1996-10-25 | 1996-10-25 | Ion source device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10134727A JPH10134727A (en) | 1998-05-22 |
| JP3503366B2 true JP3503366B2 (en) | 2004-03-02 |
Family
ID=17893620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30116896A Expired - Fee Related JP3503366B2 (en) | 1996-10-25 | 1996-10-25 | Ion source device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3503366B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100883148B1 (en) * | 2003-12-12 | 2009-02-10 | 세미이큅, 인코포레이티드 | Method and apparatus for extending equipment uptime in ion implantation |
-
1996
- 1996-10-25 JP JP30116896A patent/JP3503366B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10134727A (en) | 1998-05-22 |
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