JP3494139B2 - Plasma processing apparatus, plasma processing method, and plasma processing substrate - Google Patents
Plasma processing apparatus, plasma processing method, and plasma processing substrateInfo
- Publication number
- JP3494139B2 JP3494139B2 JP2000272819A JP2000272819A JP3494139B2 JP 3494139 B2 JP3494139 B2 JP 3494139B2 JP 2000272819 A JP2000272819 A JP 2000272819A JP 2000272819 A JP2000272819 A JP 2000272819A JP 3494139 B2 JP3494139 B2 JP 3494139B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- plasma
- chamber
- plasma processing
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8501—Cleaning, e.g. oxide removal step, desmearing
- H01L2224/85013—Plasma cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
Landscapes
- Plasma Technology (AREA)
- Cleaning In General (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Drying Of Semiconductors (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、チップの上面のパ
ッドやチップが搭載された基板のパッドをプラズマクリ
ーニングするプラズマ処理装置、プラズマ処理方法およ
びプラズマ処理基板に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus, a plasma processing method and a plasma processing substrate for plasma-cleaning pads on the upper surface of a chip and pads on a substrate on which the chip is mounted.
【０００２】[0002]
【従来の技術】プリント基板などの基板の回路パターン
のパッドと、この基板に搭載されたチップの上面のパッ
ドをワイヤで接続するのに先立って、パッドの汚れを除
去するためにプラズマクリーニング処理を施すことが知
られている。プラズマクリーニングは、チップが搭載さ
れた基板をプラズマ処理装置のチャンバに収納し、チャ
ンバ内にプラズマを発生させて、イオンやラジカルと呼
ばれる中性粒子を基板やチップの表面に衝突させること
により汚れを除去するものである。プラズマクリーニン
グ処理がなされた後、チップのパッドと基板のパッドは
ワイヤボンディング装置によりワイヤで接続され、その
後、チップやワイヤはモールド封止される。2. Description of the Related Art Prior to connecting a pad of a circuit pattern of a substrate such as a printed circuit board and a pad on the upper surface of a chip mounted on this substrate with a wire, a plasma cleaning process is performed to remove dirt from the pad. It is known to give. In plasma cleaning, a substrate on which a chip is mounted is housed in a chamber of a plasma processing apparatus, plasma is generated in the chamber, and neutral particles called ions or radicals are made to collide with the surface of the substrate or chip to remove dirt. To remove. After the plasma cleaning process, the pad of the chip and the pad of the substrate are connected by a wire by a wire bonding device, and then the chip and the wire are molded and sealed.
【０００３】図５は、従来のモールド体を形成した基板
の側面図を示している。基板１にはチップ２が搭載され
ており、基板１のパッド３とチップ２のパッド４はワイ
ヤで接続されている。６はモールド体である。モールド
体６は、チップ２やワイヤ５を樹脂封止して保護するた
めに形成されるものである。FIG. 5 is a side view of a substrate on which a conventional mold body is formed. The chip 2 is mounted on the substrate 1, and the pads 3 of the substrate 1 and the pads 4 of the chip 2 are connected by wires. 6 is a molded body. The mold body 6 is formed to protect the chip 2 and the wire 5 by resin sealing.
【０００４】[0004]
【発明が解決しようとする課題】ところが、従来のもの
は、図５に実線で示すようにモールド体６’はチップ２
の周囲に広く流出して十分に盛り上がらず、その形状は
崩れている。その結果、ワイヤ５の上部はモールド体
６’から突出して露呈している。図５において、鎖線で
示すモールド体６は正しい形状のモールド体であって、
このモールド体６は高く盛り上り、チップ２やワイヤ５
を完全に封止している。However, in the conventional one, as shown by the solid line in FIG.
It spilled out widely around and did not rise sufficiently, and its shape has collapsed. As a result, the upper portion of the wire 5 projects from the mold body 6'and is exposed. In FIG. 5, a mold body 6 indicated by a chain line is a mold body having a correct shape,
This mold body 6 rises high, and the chip 2 and the wire 5
Is completely sealed.
【０００５】従来のモールド体６’が十分に盛り上がら
ず、形崩れする理由は次のとおりである。すなわち従来
のプラズマ処理装置は、基板１の全面にプラズマを作用
させて基板１の全面をプラズマクリーニングしていた。
ところが、基板１の表面をプラズマクリーニングする
と、基板１の全面のヌレ性は向上する。その結果、モー
ルド体の素材であるモールド樹脂の密着性も向上し、基
板１の上面に形成されたモールド体はこれが硬化する前
に基板１上をチップの周囲に広く押し広がるように流出
して形崩れし、図５において実線で示すような平べった
いモールド体６’となってしまうものである。The reason why the conventional mold body 6'does not rise sufficiently and loses its shape is as follows. That is, in the conventional plasma processing apparatus, plasma is applied to the entire surface of the substrate 1 to clean the entire surface of the substrate 1.
However, when the surface of the substrate 1 is plasma-cleaned, the wettability of the entire surface of the substrate 1 is improved. As a result, the adhesion of the mold resin, which is the material of the mold body, is improved, and the mold body formed on the upper surface of the substrate 1 flows out so as to spread widely on the substrate 1 around the chip before it is cured. The shape is deformed, resulting in a flat mold body 6'as shown by the solid line in FIG.
【０００６】そこで本発明は、モールド樹脂の過度の流
出を防止し、形崩れしにくいモールド体を形成するため
のプラズマ処理装置、プラズマ処理方法およびプラズマ
処理基板を提供することを目的とする。Therefore, an object of the present invention is to provide a plasma processing apparatus, a plasma processing method, and a plasma processing substrate for preventing the mold resin from excessively flowing out and forming a mold body that is hard to lose its shape.
【０００７】[0007]
【課題を解決するための手段】請求項１に記載の発明
は、チップが搭載された基板が収納されるチャンバと、
チャンバ内を真空吸引する真空吸引手段と、チャンバ内
にプラズマ発生用ガスを供給するガス供給手段と、チャ
ンバに設けられた電極に高周波電圧を印加することによ
りチャンバ内にプラズマを発生させる電源部と、チャン
バ内にあって基板が載置される受台と、受台の上方に配
設されて基板に搭載されたチップを露呈させる開口部が
開口されたマスク部材とを備え、この開口部を、チップ
の側部の基板の上面に形成されたパッドの配設エリアを
露呈させ、且つパッドの周囲のモールド樹脂流出防止エ
リアを覆う大きさとしたことを特徴とするプラズマ処理
装置である。According to a first aspect of the present invention, there is provided a chamber for accommodating a substrate on which a chip is mounted,
A vacuum suction means for vacuum-sucking the inside of the chamber, a gas supply means for supplying a plasma generating gas into the chamber, and a power supply section for generating plasma in the chamber by applying a high frequency voltage to an electrode provided in the chamber. And a pedestal in the chamber on which the substrate is placed, and a mask member provided above the pedestal and having an opening for exposing the chip mounted on the substrate. The plasma processing apparatus is characterized in that the pad disposition area formed on the upper surface of the substrate on the side of the chip is exposed and the mold resin outflow prevention area around the pad is covered.
【０００８】請求項２に記載の発明は、請求項１に記載
のプラズマ処理装置を用いたプラズマ処理方法であっ
て、前記受台上に基板を載置する工程と、前記電源部の
駆動により前記チャンバ内にプラズマを発生させること
により、チップの上面のパッド及び前記配設エリアのパ
ッドの表面をプラズマ処理する工程と、プラズマ処理さ
れた基板を前記チャンバから取り出す工程と、を含むこ
とを特徴とするプラズマ処理方法である。A second aspect of the present invention is a plasma processing method using the plasma processing apparatus according to the first aspect, which comprises a step of placing a substrate on the pedestal and a driving of the power source section. A step of plasma-treating the surface of the pads on the upper surface of the chip and the pads of the disposition area by generating plasma in the chamber; and a step of taking out the plasma-treated substrate from the chamber. This is a plasma processing method.
【０００９】請求項３に記載の発明は、請求項２に記載
のプラズマ処理方法によって処理されたことを特徴とす
るプラズマ処理基板である。According to a third aspect of the present invention, there is provided a plasma-processed substrate which is processed by the plasma processing method according to the second aspect.
【００１０】[0010]
【発明の実施の形態】以下、本発明の実施の形態を図面
を参照して説明する。図１は本発明の一実施の形態にお
けるプラズマ処理装置の斜視図、図２は本発明の一実施
の形態におけるプラズマ処理装置の断面図、図３は本発
明の一実施の形態におけるプラズマ処理装置の平面図、
図４は本発明の一実施の形態における基板の部分平面
図、図５は本発明の一実施の形態におけるモールド体を
形成した基板の側面図である。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. 1 is a perspective view of a plasma processing apparatus according to an embodiment of the present invention, FIG. 2 is a sectional view of a plasma processing apparatus according to an embodiment of the present invention, and FIG. 3 is a plasma processing apparatus according to an embodiment of the present invention. A plan view of
FIG. 4 is a partial plan view of the substrate according to the embodiment of the present invention, and FIG. 5 is a side view of the substrate on which the mold body according to the embodiment of the present invention is formed.
【００１１】まず、図１を参照してプラズマ処理装置の
全体構造を説明する。基台１０上には基板１の搬送用ガ
イドレール１１が設けられている。ガイドレール１１の
両側部にはローダー１２とアンローダー１３が設けられ
ている。ローダー１２とアンローダー１３はエレベータ
１４、１５により高さが調整される。ローダー１２には
基板１が多段に収納されており、その背後のプッシャー
１６により基板１を１枚づつガイドレール１１上へ送り
出す。First, the overall structure of the plasma processing apparatus will be described with reference to FIG. A guide rail 11 for transporting the substrate 1 is provided on the base 10. A loader 12 and an unloader 13 are provided on both sides of the guide rail 11. Heights of the loader 12 and the unloader 13 are adjusted by elevators 14 and 15. The substrates 1 are stored in multiple stages in the loader 12, and the pushers 16 behind the substrates 1 send the substrates 1 one by one onto the guide rail 11.
【００１２】ガイドレール１１の中央部にはチャンバの
上蓋２１が設けられている。上蓋２１はアーム２２に保
持されており、アーム２２により上下動して開閉され
る。１７は送り爪であり、ガイドレール１１上の基板１
をローダー１２からアンローダー１３へ向って搬送す
る。１８は送り爪１７を上下動させるためのシリンダ、
１９はシリンダ１８および送り爪１７をピッチ送りする
ための無端ベルト、２０は無端ベルト１９の駆動用モー
タである。An upper lid 21 of the chamber is provided at the center of the guide rail 11. The upper lid 21 is held by an arm 22 and is vertically moved and opened / closed by the arm 22. Reference numeral 17 is a feed claw, which is the substrate 1 on the guide rail 11.
Is conveyed from the loader 12 to the unloader 13. 18 is a cylinder for moving the feed pawl 17 up and down,
Reference numeral 19 is an endless belt for pitch-feeding the cylinder 18 and the feed claw 17, and 20 is a drive motor for the endless belt 19.
【００１３】次に、図２および図３を参照して、プラズ
マ処理装置を説明する。図２は図３のＡ−Ａ断面図であ
る。図２において、上蓋２１は受部２３上に上下動自在
に載置されている。上蓋２１の下部には下部電極２４が
設けられており、下部電極２４上には受台２５が設けら
れている。下部電極２４は高周波の電源部２６に接続さ
れており、また上蓋２１は接地部２７に接地されてい
る。上蓋２１や下部電極２４はプラズマが発生するチャ
ンバ２８を構成している。２９は受部２３上に配設され
たシール部材である。３０はチャンバ２８の内部を真空
吸引する真空ポンプなどの真空吸引手段、３１はチャン
バ２８内にプラズマ発生用ガスを供給するガス供給手段
である。また下部電極２４と受台２５は電気的に接続さ
れており、これらの下部電極２４と受台２５は電源部２
６に接続され、１つの電極とみなすことができる。Next, the plasma processing apparatus will be described with reference to FIGS. 2 and 3. FIG. 2 is a sectional view taken along line AA of FIG. In FIG. 2, the upper lid 21 is placed on the receiving portion 23 so as to be vertically movable. A lower electrode 24 is provided below the upper lid 21, and a pedestal 25 is provided on the lower electrode 24. The lower electrode 24 is connected to a high frequency power supply unit 26, and the upper lid 21 is grounded to a ground unit 27. The upper lid 21 and the lower electrode 24 form a chamber 28 in which plasma is generated. Reference numeral 29 is a seal member arranged on the receiving portion 23. Reference numeral 30 is a vacuum suction means such as a vacuum pump for vacuum suctioning the inside of the chamber 28, and 31 is a gas supply means for supplying a plasma generating gas into the chamber 28. The lower electrode 24 and the pedestal 25 are electrically connected to each other, and the lower electrode 24 and the pedestal 25 are connected to the power supply unit 2
6 and can be considered as one electrode.
【００１４】図２において、受台２５上にはマスク部材
３３が設けられている。マスク部材３３は、例えばセラ
ミックなどの絶縁性の硬質部材から成っている。マスク
部材３３には、チップ２およびチップの周囲を露呈させ
るための開口部３４が開口されている。In FIG. 2, a mask member 33 is provided on the pedestal 25. The mask member 33 is made of an insulating hard member such as ceramic. The mask member 33 has an opening 34 for exposing the chip 2 and the periphery of the chip.
【００１５】図４において、チップ２の上面にはパッド
４が形成されており、また基板１の上面には回路パター
ンのパッド３が形成されている。基板１のパッド３は、
これに搭載されたチップ２を取り囲むように、チップ２
の側部に形成されている。開口部３４は、チップ２およ
びパッド３の配設エリア（図４において、開口部３４の
内縁とチップ２の外縁の間の幅Ｌ３で示すエリア）を露
呈させる大きさに開口されている。Ｌ１は開口部３４の
開口幅である。またマスク部材３３で覆われた基板上面
のＬ２で示すエリアはパッド３の配設エリアＬ３の周囲
のモールド樹脂流出防止エリアである。図２において、
３５は受台２５の中央に設けられた仕切部であり、本実
施の形態では、基板１は仕切部３５をはさんで２枚載置
されている。３６は下部電極２４と受部２３の間に設け
られた絶縁体である。In FIG. 4, pads 4 are formed on the upper surface of the chip 2, and pads 3 having a circuit pattern are formed on the upper surface of the substrate 1. The pad 3 of the substrate 1 is
The chip 2 is mounted so as to surround the chip 2 mounted on it.
Is formed on the side part of. The opening 34 is opened to a size that exposes the area where the chip 2 and the pad 3 are arranged (the area indicated by the width L3 between the inner edge of the opening 34 and the outer edge of the chip 2 in FIG. 4). L1 is the opening width of the opening 34. The area indicated by L2 on the upper surface of the substrate covered with the mask member 33 is a mold resin outflow prevention area around the arrangement area L3 of the pad 3. In FIG.
Reference numeral 35 denotes a partition section provided in the center of the pedestal 25. In the present embodiment, two substrates 1 are placed with the partition section 35 interposed therebetween. 36 is an insulator provided between the lower electrode 24 and the receiving portion 23.
【００１６】このプラズマ処理装置は上記のような構成
より成り、次に動作を説明する。図１において、プッシ
ャー１６によりローダー１２から押し出された基板１
は、送り爪１７により図２の受台２５上へ送られる。こ
のとき、上蓋２１は上昇位置にあって受台２５の上面を
開放している。次に上蓋２１は下降して受部２３上に着
地し、チャンバ２８は密閉される。このとき、基板１上
のチップ２は開口部３４の直下に位置する。This plasma processing apparatus has the above-mentioned structure, and its operation will be described below. In FIG. 1, the substrate 1 extruded from the loader 12 by the pusher 16
Is sent by the feed claws 17 onto the pedestal 25 in FIG. At this time, the upper lid 21 is in the raised position and the upper surface of the pedestal 25 is open. Next, the upper lid 21 descends and lands on the receiving portion 23, and the chamber 28 is sealed. At this time, the chip 2 on the substrate 1 is located immediately below the opening 34.
【００１７】次に、図２において、真空吸引手段３０に
よりチャンバ２８内は真空吸引され、またガス供給手段
３１からチャンバ２８内に例えばアルゴンガスなどのプ
ラズマガスが供給される。次いで電源部２６により下部
電極２４に高周波高圧の電圧が印加され、チャンバ２８
内にプラズマが発生する。そして発生したプラズマは開
口部３４を通過し、チップ２や基板１の上面に衝突し、
上面をエッチング等の作用によってクリーニングする。Next, in FIG. 2, the inside of the chamber 28 is vacuum-sucked by the vacuum suction means 30, and a plasma gas such as argon gas is supplied from the gas supply means 31 into the chamber 28. Next, a high frequency and high voltage is applied to the lower electrode 24 by the power supply unit 26, and the chamber 28
Plasma is generated inside. The generated plasma passes through the opening 34, collides with the upper surface of the chip 2 or the substrate 1,
The upper surface is cleaned by an action such as etching.
【００１８】図２に示すように、開口部３４には基板１
のパッド３やチップ２のパッド４が露呈しており、これ
らに付着した汚れはエッチングによりクリーニングされ
る。また開口部３４に露呈する基板１の上面もエッチン
グされ且つ活性化され、ヌレ性が向上する。ヌレ性が向
上すると、モールド樹脂の密着性も増大する。As shown in FIG. 2, the substrate 1 is provided in the opening 34.
Of the pad 3 and the pad 4 of the chip 2 are exposed, and the dirt attached to these is cleaned by etching. Further, the upper surface of the substrate 1 exposed in the opening 34 is also etched and activated, and the wetting property is improved. When the wettability is improved, the adhesiveness of the mold resin is also increased.
【００１９】プラズマ処理が終了したならば、上蓋２１
は上昇し、受台２５上の基板１は送り爪１７によりアン
ローダー１３へ送られて回収される。以上の動作が繰り
返されることにより、ローダー１２内の基板１は次々に
プラズマ処理されてアンローダー１３に回収される。When the plasma processing is completed, the upper lid 21
Goes up, and the substrate 1 on the pedestal 25 is sent to the unloader 13 by the feed claw 17 and collected. By repeating the above operation, the substrates 1 in the loader 12 are sequentially plasma-treated and collected by the unloader 13.
【００２０】次いでアンローダー１３はワイヤボンディ
ング装置（図示せず）に送られ、基板１のパッド３とチ
ップ２のパッド４はワイヤで接続される。この場合、パ
ッド３、４はプラズマ処理によりクリーニングされてい
るので、ワイヤボンディングを良好に行うことができ
る。Next, the unloader 13 is sent to a wire bonding device (not shown), and the pads 3 of the substrate 1 and the pads 4 of the chip 2 are connected by wires. In this case, since the pads 3 and 4 are cleaned by the plasma treatment, the wire bonding can be satisfactorily performed.
【００２１】ワイヤボンディングが終了した基板１は樹
脂塗布装置（図示せず）へ送られ、基板１の上面にはチ
ップ２とワイヤ５を樹脂封止するためのモールド体６が
形成されるが、上記のようにしてプラズマ処理された基
板１には、図５において鎖線で示すような形崩れのない
十分に盛り上った形状のよいモールド体６を形成するこ
とができる。その理由は以下のとおりである。図４にお
いて、開口部３４から露呈する基板１のパッド３の配設
エリアＬ３はプラズマが衝突してヌレ性が向上している
ので、モールド体６の素材であるモールド樹脂はこの配
設エリアＬ３においてしっかり基板１の上面に密着す
る。またパッド３の配設エリアＬ３の周囲のモールド樹
脂流出防止エリアＬ２（図４でハッチングを付したエリ
ア）はマスク部材３３で覆われていたためプラズマは衝
突しておらず、したがってヌレ性は悪いままである。ヌ
レ性が悪いと、基板１上のモールド樹脂は過度に流動せ
ず、従来例のようにモールド樹脂は外方へ過度に流出し
ない。したがってモールド体６は形崩れすることなく、
ほぼ開口幅Ｌ１のエリア内において十分に盛り上った形
状を維持し、チップ２やワイヤ５を完全に封止する。The substrate 1 after wire bonding is sent to a resin coating device (not shown), and a mold body 6 for resin-sealing the chip 2 and the wire 5 is formed on the upper surface of the substrate 1. On the substrate 1 which has been subjected to the plasma treatment as described above, it is possible to form the mold body 6 having a sufficiently raised shape and having no deformation as shown by a chain line in FIG. The reason is as follows. In FIG. 4, since the plasma collides with the disposition area L3 of the pad 3 of the substrate 1 exposed from the opening 34 to improve the wetting property, the mold resin, which is the material of the mold body 6, has the disposition area L3. At the point of, it firmly adheres to the upper surface of the substrate 1. Further, since the mold resin outflow prevention area L2 (hatched area in FIG. 4) around the disposition area L3 of the pad 3 is covered with the mask member 33, the plasma does not collide with it, and therefore the wetting property remains poor. Is. If the wetting property is poor, the molding resin on the substrate 1 does not excessively flow, and the molding resin does not excessively flow out like the conventional example. Therefore, the mold body 6 does not lose its shape,
The chip 2 and the wire 5 are completely sealed while maintaining a sufficiently raised shape in the area of the opening width L1.
【００２２】[0022]
【発明の効果】以上説明したように本発明によれば、モ
ールド樹脂の過度の流出を防止し、形崩れしにくいモー
ルド体を形成することができる。As described above, according to the present invention, it is possible to prevent the mold resin from flowing out excessively and to form a mold body which is hard to lose its shape.
【図１】本発明の一実施の形態におけるプラズマ処理装
置の斜視図FIG. 1 is a perspective view of a plasma processing apparatus according to an embodiment of the present invention.
【図２】本発明の一実施の形態におけるプラズマ処理装
置の断面図FIG. 2 is a sectional view of a plasma processing apparatus according to an embodiment of the present invention.
【図３】本発明の一実施の形態におけるプラズマ処理装
置の平面図FIG. 3 is a plan view of a plasma processing apparatus according to an embodiment of the present invention.
【図４】本発明の一実施の形態における基板の部分平面
図FIG. 4 is a partial plan view of a substrate according to an embodiment of the present invention.
【図５】従来および本発明の一実施の形態におけるモー
ルド体を形成した基板の側面図FIG. 5 is a side view of a substrate on which a molded body is formed according to the related art and one embodiment of the present invention
１ 基板 ２ チップ ３、４ パッド ６ モールド体 ２６ 電源部 ２８ チャンバ ３０ 真空吸引手段 ３１ ガス供給手段 ３３ マスク部材 ３４ 開口部 1 substrate 2 chips Three and four pads 6 Mold body 26 power supply 28 chambers 30 vacuum suction means 31 gas supply means 33 Mask member 34 opening
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/56 B08B 7/04 H01L 21/3065 H01L 23/28 H05H 1/46 ─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. 7 , DB name) H01L 21/56 B08B 7/04 H01L 21/3065 H01L 23/28 H05H 1/46
Claims (3)
ンバと、チャンバ内を真空吸引する真空吸引手段と、チ
ャンバ内にプラズマ発生用ガスを供給するガス供給手段
と、チャンバに設けられた電極に高周波電圧を印加する
ことによりチャンバ内にプラズマを発生させる電源部
と、チャンバ内にあって基板が載置される受台と、受台
の上方に配設されて基板に搭載されたチップを露呈させ
る開口部が開口されたマスク部材とを備え、この開口部
を、チップの側部の基板の上面に形成されたパッドの配
設エリアを露呈させ、且つパッドの周囲のモールド樹脂
流出防止エリアを覆う大きさとしたことを特徴とするプ
ラズマ処理装置。1. A chamber for accommodating a substrate on which a chip is mounted, a vacuum suction means for vacuum-sucking the inside of the chamber, a gas supply means for supplying a plasma generating gas into the chamber, and an electrode provided in the chamber. A power supply unit for generating plasma in the chamber by applying a high-frequency voltage to the chamber; a pedestal in which the substrate is placed in the chamber; and a chip mounted above the pedestal and mounted on the substrate. A mask member having an opening to be exposed, which exposes the area where the pad is formed on the upper surface of the substrate on the side of the chip, and the mold resin outflow prevention area around the pad. A plasma processing apparatus having a size that covers the.
たプラズマ処理方法であって、前記受台上に基板を載置
する工程と、前記電源部の駆動により前記チャンバ内に
プラズマを発生させることにより、チップの上面のパッ
ド及び前記配設エリアのパッドの表面をプラズマ処理す
る工程と、プラズマ処理された基板を前記チャンバから
取り出す工程と、を含むことを特徴とするプラズマ処理
方法。2. A plasma processing method using the plasma processing apparatus according to claim 1, wherein a step of placing a substrate on the pedestal and generating plasma in the chamber by driving the power supply unit. By so doing, the method further includes the steps of plasma-treating the pads on the upper surface of the chip and the surfaces of the pads in the disposition area, and taking out the plasma-treated substrate from the chamber.
て処理されたことを特徴とするプラズマ処理基板。3. A plasma-processed substrate processed by the plasma processing method according to claim 2.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000272819A JP3494139B2 (en) | 2000-09-08 | 2000-09-08 | Plasma processing apparatus, plasma processing method, and plasma processing substrate |
| TW090122259A TW515012B (en) | 2000-09-08 | 2001-09-07 | Plasma-processing apparatus, plasma-processing method, and chip mounted method |
| US09/948,098 US6576500B2 (en) | 2000-09-08 | 2001-09-07 | Method of plasma-processing a board, chip attachment to the board and resin encapsulation of the chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000272819A JP3494139B2 (en) | 2000-09-08 | 2000-09-08 | Plasma processing apparatus, plasma processing method, and plasma processing substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002083829A JP2002083829A (en) | 2002-03-22 |
| JP3494139B2 true JP3494139B2 (en) | 2004-02-03 |
Family
ID=18758872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000272819A Expired - Fee Related JP3494139B2 (en) | 2000-09-08 | 2000-09-08 | Plasma processing apparatus, plasma processing method, and plasma processing substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3494139B2 (en) |
-
2000
- 2000-09-08 JP JP2000272819A patent/JP3494139B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002083829A (en) | 2002-03-22 |
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