JP3457572B2 - Apparatus and method for forming insulating film - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is to form an insulating film on a glass substrate which is a film formation substrate by a plasma chemical vapor deposition method called a low pressure CVD method, and then use the substrate support used at the time of film formation as a glass substrate. The present invention relates to a film forming processing apparatus and a processing method for peeling from a substrate.

[0002]

2. Description of the Related Art In recent years, a glass substrate of a liquid crystal display device has become large in accordance with a large size of a display such as a television, and a conductive film, a semiconductor element forming film or a passivation film for protecting them is uniformly formed on the glass substrate. However, various proposals have been made. A nitride film is used as a passivation film that is an insulating film that protects the conductive film and the semiconductor element forming film. Then, in order to uniformly form a dense and high-hardness nitride film on a glass substrate, a film forming method by a low pressure CVD method is currently the mainstream.

FIGS. 6A and 6B show a conventional low pressure CVD.
FIG. 4A is a schematic cross-sectional view of a low pressure CVD apparatus for explaining a film forming method, and FIG. 8B is a cross-sectional view of a holding mechanism pulled out of the apparatus. As shown in FIG. 6A, a low pressure CVD apparatus for forming this insulating film is set upright and placed in a tray-1.
It has a stage 4 which holds a and is grounded and has a heater 5 built-in, and an electrode 6 which is arranged so as to face the stage 4 and is connected to a high frequency power source 13. Also, the station
The electrode which is the electrode 4 and the electrode 6 which faces the electrode are housed in a chamber 12 whose pressure is reduced.

In order to form an insulating film on the glass substrate 14 on which the semiconductor element forming film and the conductive pattern 15 are already formed by using this low pressure CVD apparatus, the film forming surface of the glass substrate 14 is provided with the opening 11. Exposed from the tray and fitted into the tray-1a,
The soaking plate 2 a is applied to the back surface of the glass substrate 14 and fixed and held by the pressing plate 3.

The tray-1a thus assembled with the glass substrate 14 and the heat equalizing plate 2a is carried into the chamber 12 by a carry-in / out robot (not shown), and the heat uniforming plate 2a contacts the surface of the stage 4. As you can see, training-1a is stage 4
Placed on. Then, the chamber is depressurized to a predetermined pressure with a vacuum pump. On the other hand, the glass substrate 14 is uniformly heated by the heater 5 through the soaking plate 2a.

Next, a growth gas is introduced into the chamber,
A voltage is applied between the electrode 6 and the stage 4 by the high frequency power source 13 to form plasma. Ions of the insulating material from this plasma are deposited through the opening 11 of the tray-1a on the surface of the glass substrate 14 uniformly heated to a predetermined temperature by the soaking plate 2a, and as shown in FIG. An insulating film 16 is formed so as to cover the conductive pattern 15.

After the insulating film is formed in this way, the chamber 12 is opened to the atmosphere, and the tray-1 is moved by the loading / unloading robot.
a is kept grounded and pulled out of the chamber 12, and the tray-1a is placed on a platform (not shown). Then, the pressing plate 3 was shifted, and the heat equalizing plate 2a and the glass substrate 14 were removed from the tray-1a.

[0008]

DISCLOSURE OF THE INVENTION Conventional decompression C described above
In the VD film forming method, the metal tray-1a and the heat equalizing plate 2a are grounded even during film formation and when carried out of the chamber, but static electricity is accumulated because the glass substrate is a dielectric. The soaking plate 2a has an earth potential. Because of this potential difference, when the glass substrate 14 and the heat equalizing plate 2a are separated from each other, a discharge occurs between the glass substrate 14 and the grounded tray-1a, and the semiconductor element forming film semiconductor element formed on the glass substrate 14 is discharged. There was a problem that the transistor was destroyed.

An example of a method for solving this problem is disclosed in Japanese Patent Laid-Open No. 3-249624. In this method, short-circuit wiring that connects the terminal portion of the video signal line and the terminal portion of the scanning line is provided on the outer periphery of the glass substrate, and static electricity generated during film formation is released to the ground through the short-circuiting wiring. Prevents electric breakdown. However, this is not necessarily a good method because it is necessary to previously form the short-circuit wiring or to remove the insulating film after film formation to separate the short-circuit wiring from the connection portion.

Another solution is disclosed in Japanese Patent Laid-Open No. 7-2404.
No. 58 is disclosed. This method is applied to a semiconductor substrate and is a method of preventing electrostatic breakdown that occurs when the semiconductor substrate is lifted from the stage.
Further, this method is characterized in that a discharge detecting device is provided between the semiconductor substrate and the stage, and when the discharge detecting device detects a discharge, the semiconductor substrate is discharged.

However, this method may be applicable to a semiconductor substrate having a small area and a small amount of electric charges, but in a glass substrate which is many times larger than the semiconductor substrate,
The amount of charge is large and the voltage is high. Therefore, when the discharge detecting device detects the discharge, it is already too late to cause the discharge and destroy the element.

Therefore, an object of the present invention is to provide an insulating film forming apparatus and a processing method capable of forming an insulating film which protects a semiconductor element formed on a glass substrate without being electrostatically destroyed. Especially.

[0013]

A feature of the present invention is that the back surface of an insulating substrate having a conductive pattern formed on the front surface is brought into contact with a grounded heat equalizing plate to form an insulating film on the surface of the substrate. In the film forming processing apparatus for forming a film, after forming the insulating film, the film forming apparatus has a substrate holding mechanism that floats the heat equalizing plate from the ground potential so as to have the same potential as the substrate, and from the substrate in the state of the same potential. It is a film-forming treatment apparatus for an insulating film, which is provided with a means for peeling the soaking plate.

Further, the substrate holding mechanism exposes the conductive pattern surface of the substrate to insert the substrate, insert the heat equalizing plate over the back surface of the substrate, and heat the substrate and the heat equalizing plate. A metal frame-shaped tray having a pressing plate for fixing the plate, an outer peripheral portion of the tray with which a clamp for holding the tray abuts, the tray for holding the substrate and the heat equalizing plate. An insulating member arranged so as to partition the inner peripheral portion of the tray, and a region electrically connected to the inner peripheral portion of the tray is formed in the outer peripheral portion of the tray. There is. It is desirable that a plurality of gas escape holes be formed in the heat equalizing plate. Further, it is desirable to have an insertion / removal mechanism that vacuum-adsorbs the heat equalizing plate and the substrate and inserts or removes them into or from the tray.

It is desirable to provide means for reducing static electricity charged on the substrate before the heat equalizing plate is peeled off.
In addition, the charge for neutralizing the static electricity is included in the inert gas as necessary. It is desirable that a knockout pin that pushes the substrate and peels the heat equalizing plate from the substrate be provided as the peeling means.

Another feature of the present invention is that a stage with a built-in heater is housed in a depressurized container, and is disposed in the container so as to face the grounded stage and a high frequency power source. And an electrode connected to the stage, and a metal soaking plate made of metal placed on the stage and brought into contact with the soaking plate to hold the substrate as the film-forming target and the soaking plate in an overlapping manner. to Tre - a reduced pressure CVD apparatus Ru and a said with introducing the deposition gas into the container stearyl - a high-frequency power is applied to form plasma between di and the electrode, the training is the ground potential - of the opening An insulating film is formed on the substrate exposed from the substrate, and then the container is returned to the atmosphere to separate the tray from the stage with the soaking plate, and the substrate in a state of being floated from the ground potential is charged. While keeping the electrostatic potential, Deposition in the soaking plate and the substrate and is peeled off and the substrate front <br/> KiHitoshinetsu plate in the state of the same potential insulating film - unloaded out serial container unloaded by said tray It is a processing method.

Further, when the tray is separated from the stage, the ground wire connected to the tray is cut off, the tray is held via an insulating member, and the tray is held outside the container. It is desirable to carry out. Further, it is desirable to blow an inert gas onto the insulating film of the substrate. Then, if necessary, the inert gas contains a charge for neutralizing the charge of the static electricity. On the other hand, when the substrate and the heat equalizing plate are peeled off, gas is introduced into the gap between the substrate and the heat equalizing plate, or the substrate and the heat equalizing plate are separated by air pressure. . Further, when the substrate and the heat equalizing plate are taken out from or inserted into the tray, it is preferable that the substrate and the heat equalizing plate are sucked and held by a vacuum pad.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.

1 (a) and 1 (b) are schematic cross-sectional views (a) of a low pressure CVD apparatus for explaining a low pressure CVD film forming method according to an embodiment of the present invention and a holder pulled out of the apparatus. It is sectional drawing (b) of a mechanism.

In this low pressure CVD apparatus, as shown in FIG. 1, an insulating member 8 is embedded so as to extend in the thickness direction so as to insulate the inner peripheral portion 10a and the outer peripheral portion 10b of the tray-1, and the tray 1 Connect the ground wire connected to the conductive portion of the inner peripheral portion 10a of the tray-1 so that the tray-1 floats from the ground potential when the tray-1 is separated from the stage 4 together with the soaking plate 2. A changeover switch 7 for shutting off is provided.

In other words, during the film formation, the tray-1 and the heat equalizing plate 2 are in the grounded state, and after the film formation, they are separated from the stage 4 and floated from the ground potential by the changeover switch 7 as shown in FIG. As shown in b), the tray-1 is placed outside the chamber 12.
Is to bring out. At this time, the glass substrate 14 and the soaking plate 2 have the same potential.

Next, the low pressure CVD film forming method will be explained by explaining the operation of the low pressure CVD apparatus of FIG. First, the glass substrate 14 and the heat equalizing plate 2 are stacked and inserted into the tray-1, and the pressing plate 3 fixes and holds the glass substrate 14 and the heat equalizing plate 2 in the tray-1. Next, as shown in FIG.
Is loaded into the chamber 12 by the loading / unloading robot, and the tray-1 is mounted on the stage 4. Then, the changeover switch 7 is turned on, and the inner peripheral portion 10a of the tray-1 is grounded.

The chamber 12 is depressurized to a predetermined pressure with a vacuum pump, and the growth gas is introduced into the chamber. In addition, the glass substrate 14 held on the tray-1 in the chamber 12
Is uniformly heated by the heat equalizing plate 2 heated by the heater 5 of the stage 4. Then, the plasma is formed by applying the voltage of the high frequency power source 13, and the opening 11 of the tray-1 is formed.
An insulating film 16 is formed on the surface of the glass substrate 14 exposed from the conductive pattern 15.

When the film formation is completed, the chamber 12 is returned to the atmosphere, the ground wire is cut off by turning off the changeover switch 7, and when the tray-1 is separated from the stage 4 by the carry-in / out robot, the glass is The tray-1 holding the substrate 14 and the heat equalizing plate 2 has a potential floating above the ground potential. Further, the tray-1 mounted on the platform (not shown) through the insulating plate is also in a state of floating from the ground potential.

Further, even if the glass substrate 14 is charged with static electricity, the tray-1 and the heat equalizing plate 2 and the glass substrate 14 have the same potential. Therefore, when the glass substrate 14 is peeled from the heat equalizing plate 2, the tray -1 is a state floating above the ground potential, and there is no abrupt charge transfer and no discharge occurs. As a result, the semiconductor element connected to the conductive pattern 15 covered with the insulating film 16 is not destroyed.

The glass substrate 14 must be destaticized so that the mounted IC is not electrostatically destroyed when the glass substrate peeled from the heat equalizing plate 2 is sent to the next assembly process. Therefore, in the present invention, before the glass substrate 14 and the heat equalizing plate 2 are peeled off, the charge is removed while the glass substrate 14 is placed on the platform.

Normally, static electricity is discharged into the air in about 5 minutes even when the tray-1 is placed, but in order to shorten the discharge time, an inert gas such as nitrogen or argon is added to the glass substrate. By spraying on the insulating film 16 of 14, it can be shortened to about 2 minutes. More preferably, if a commercially available ionizer is attached to a blower for blowing an inert gas, and the inert gas contains ions and is blown, the charge can be removed within 1 minute.

2 (a) and 2 (b) are a plan view and a sectional view taken along the line AA of the tray for explaining the glass substrate holding mechanism in the embodiment of the present invention. In this holding mechanism, as shown in FIG. 2, the surface of the glass substrate 14 on which the conductive pattern 15 is formed is exposed and fitted into the opening 11, and the heat equalizing plates 2 are stacked and incorporated on the back surface of the glass substrate 14. It has a frame-shaped conductive member Tray-1.

The inner peripheral portion 10a around the hole portion of the tray-1 into which the glass substrate 14 and the heat equalizing plate 2 are inserted and the tray-1.
The insulating member 8 extends in the thickness direction of the tray-1 so as to partition the outer peripheral portion 10b which is the outer peripheral portion of the tray-1. The insulating member 8 is interrupted at a part of the tray-1, and a contact region 10C for contact with an earth rod described later is formed at this part.

The material of the tray-1 is preferably the same as that of the soaking plate 2 made of stainless steel. The insulating member 8 is made of heat-resistant vinyl chloride resin, alumina ceramic, or the like sandwiched between the inner peripheral portion 10a and the outer peripheral portion 10b of the tray and fixed with an epoxy adhesive. Further, considering only having an insulating function, the outer periphery of the tray-1 may be covered with an insulating member, but since the clamper described later contacts the outer peripheral surface of the tray-1, it has abrasion resistance. It is desirable to cover the insulating member 8 with a rigid stainless steel outer peripheral portion 10b.

On the other hand, the pressing plate 3 made of the same material as the tray-1 in consideration of thermal expansion prevents the soaking plate 2 and the glass substrate 14 from moving when the tray-1 is carried in and out of the chamber. It is a means of fixing. The soaking plate 2 is slid in the direction of the soaking plate 2, and the soaking plate 2 is pressed and fixed by screws. When removing the soaking plate 2, loosen the screw and slide it outward.

3 (a) and 3 (b) are plan views of the tray for explaining the state during film formation on the glass substrate and the state of carrying in / out of the chamber using the holding mechanism of FIG. 2 and the inside of the chamber. FIG. 3 is a cross-sectional view showing a state in FIG. Next, the operation of forming the insulating film on the glass substrate using the holding mechanism of FIG. 2 will be described.

First, as shown in FIG. 3 (a), the glass substrate 14 and the heat equalizing plate 2 are inserted into the tray-1 placed horizontally on the platform and fixedly held by the pressing plate 3. next,
The loading / unloading robot clamp 9 is the inner peripheral portion 10a of the tray-1.
It contacts with the insulated outer part and holds the tray-1. Next, the tray-1 held by the clamp 9 is vertically erected by the turning mechanism of the loading / unloading robot and is loaded into the chamber 12 of FIG. 3B in which the door 12a is opened.

The tray-1 loaded into the chamber 12 is placed on the stage 4. Then, the ground rod 7a rises from the bottom of the chamber 12 in the direction of the arrow, contacts the contact area 10c of the tray-1, and grounds the inner peripheral portion 10a of the tray-1, which encloses the heat equalizing plate 2 and the glass substrate. To do. In the drawing,
It is shown that there are two rods 7a, but it is 2 in the tray.
When a soaking plate and a glass substrate are mounted,
1 if one soaking plate 2 and glass substrate 14 are mounted
A book ground stick is fine.

Next, the door 12a is closed and the chamber 12 is evacuated to form an insulating film on the glass substrate. Even if such a grounding means is not provided, the TRAY-1 can be grounded because it is in contact with the stage 4, but the TRAY-1 should have a grounding ON / OFF function, which will be described later, and the TRAY-1 will not have a floating potential. This is because the surface facing the electrode is surely grounded.

When the film formation is completed, the ground rod 7a descends to cut off the ground. Then, the chamber 12 is returned to the atmosphere,
Open the door 12a. Then, the carry-in / carry-out robot is moved into the chamber 12, and the outer surface of the tray-1 placed on the stage 4 is held by the clamps 9 to hold the tray-1 away from the stage 4. At this time, since the clamp 9 is in contact with the inner peripheral portion 10a of the tray-1 and the outer peripheral portion partitioned by the insulating member 8, the charge accumulated on the glass substrate in the tray-1 flows to the ground side. Absent. Then, train-1 on the platform
Then, the static charge is removed as described above. The clamp 9 may be formed of an insulating member for insulation, but this is not a good idea because it impairs the versatility of an apparatus that forms various films.

FIGS. 4 (a) and 4 (b) are a plan view and a BB sectional arrow view showing a modified example of the tray of the holding mechanism of FIG. The tray is placed under a reduced pressure during film formation, and the glass substrate is removed in the atmosphere. However,
When the heat equalizing plate 2 and the glass substrate 14 are peeled off, the heat equalizing plate 2 and the glass substrate 14 adhere to each other, and it is difficult for air to enter the gap between the heat equalizing plate 2 and the glass substrate 14. 1
Even if it is pulled out, it will be in a vacuum-adsorbed state. For this reason,
When the heat equalizing plate 2 and the glass substrate 14 are peeled off, the glass substrate 14 may be damaged.

Therefore, as a modified example of the holding mechanism, as shown in FIG. 4, a large number of gas vent holes 17 having a small diameter that does not hinder heat conduction are formed in the heat equalizing plate 2 at equal intervals. As a result, air is introduced through the gas vent holes 17 while the tray-1 is carried out from the chamber, and the soaking plate 2 and the glass substrate 1
The gap of 4 becomes atmospheric pressure. As a result, the glass substrate 14 and the heat equalizing plate 2 are easily separated from each other. Also, if necessary,
It is also possible to forcibly introduce a gas such as dry nitrogen from the gas vent hole 17 to increase the pressure in the gap and peel it off.

FIGS. 5 (a) and 5 (b) are sectional views showing an inserting / removing mechanism for inserting and removing the heat equalizing plate from the glass substrate in another embodiment of the glass substrate holding mechanism of the present invention.
Trays of heavy metal soaking plate 2 and glass substrate 14
It is difficult to manually insert into 1 and take out from tray-1.

Therefore, this holding mechanism is responsible for one of the sequence control of the tray-1 although it is not mechanically connected to the tray-1. The glass substrate holding mechanism includes an insertion / removal mechanism that inserts a heat equalizing plate or a glass substrate into the tray-1 and removes the glass substrate from the tray-1. As shown in FIG. 5, this insertion / removal mechanism includes a plurality of vacuum pads 19 attached to a support 21 that moves vertically and horizontally. And
These vacuum pads 19 are smaller than the soaking plate 2 so that the soaking plate 2 and the glass substrate 14 can be attracted to each other.
Are equidistantly arranged in the plane.

When the glass substrate 14 and the heat equalizing plate are inserted into the tray-1, first, the air cylinder 20 attached to the center of the support 21 is not operated and the knockout pin 18 is kept raised. Then, the support 21 is moved to adsorb the glass substrate from the stocker with the vacuum pad 19, the support 21 is moved to position the glass substrate 14 above the tray-1, and the support 21 is moved down into the tray-1. The glass substrate 14 is inserted. Then, the inside of the vacuum pad 19 is set to the atmosphere, and the glass substrate 14 is loaded on the tray-1. Next, the support 21 is moved to move the soaking plate 2 to the vacuum pad 19
Then, the support 21 is moved, and the same operation is performed to place the soaking plate on the glass substrate 14. In addition, when the glass substrate 14 and the heat equalizing plate 2 are detached, the above operation may be performed in reverse.

As described above, when it is difficult to separate the glass substrate 14 and the heat equalizing plate from each other because the gap cannot reach the atmospheric pressure, as shown in FIGS. 5 (a) and 5 (b), A pneumatic pneumatic cylinder 20 having compressibility and attached to the center of the support 21 is operated, the knockout pin 18 is put into the hole 18a of the heat equalizing plate 2 and is brought into contact with the glass substrate 14, and the air cylinder 20 is operated to perform static pressure. By pressing the glass substrate 14 with and lifting the soaking plate 2 with the vacuum pad 19, the soaking plate 2 and the glass substrate 14 can be easily peeled off easily.

[0043]

As described above, according to the present invention, after the insulating film is formed on the glass substrate, the tray for assembling the glass substrate and the heat equalizing plate in an overlapping manner is removed from the stage which is the ground potential. -By removing the grounding means and keeping the glass substrate and the heat equalizing plate at the same potential without letting the static electricity of the glass substrate escape to the ground, there is no potential difference between the glass substrate and the heat equalizing plate when they are separated. There was no discharge, and the semiconductor elements formed on the glass substrate were less destroyed, and the manufacturing yield was improved.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view (a) of a low-pressure CVD apparatus and a cross-sectional view (b) of a holding mechanism pulled out of the apparatus for explaining a low-pressure CVD film forming method according to an embodiment of the present invention. .

2A and 2B are a plan view and a sectional view taken along the line AA of the tray for explaining the glass substrate holding mechanism in the embodiment of the present invention.

3A and 3B are a plan view and a cross-sectional view showing a state inside the chamber for explaining a state during film formation on the glass substrate and a state of carrying in and out of the chamber using the holding mechanism of FIG.

4A and 4B are a plan view and a BB sectional arrow view showing a modified example of the tray of the holding mechanism of FIG.

FIG. 5 is a cross-sectional view showing an insertion / removal mechanism for inserting and removing a soaking plate from the glass substrate in another embodiment of the glass substrate holding mechanism of the present invention.

FIG. 6 is a schematic cross-sectional view (a) of a low-pressure CVD apparatus and a cross-sectional view (b) of a holding mechanism pulled out of the apparatus for explaining a conventional low-pressure CVD film forming method.

[Explanation of symbols]

1,1a tray 2,2a soaking plate 3 holding plate 4 stages 5 heater 6 electrodes 7 Changeover switch 7a ground rod 8 Insulation member 9 clamps 10a inner peripheral part 10b outer periphery 11 openings 12 chambers 13 High frequency power supply 14 glass substrate 15 Conductive pattern 16 Insulating film 17 Gas vent hole 18 Knockout pin 19 vacuum pad 20 air cylinders 21 Support

Front page continued (58) Fields surveyed (Int.Cl. ⁷ , DB name) C23C 16/56 G02F 1/1333 G09F 9/30-9/46 H01L 21/31

Claims (15)

(57) [Claims] 1. A film forming apparatus for forming an insulating film on the surface of a substrate by bringing the back surface of an insulating substrate having a conductive pattern formed on the surface into contact with a soaking plate that is grounded. After the film is formed, it has a substrate holding mechanism that floats the heat equalizing plate from the ground potential so as to have the same potential as the substrate, and comprises means for peeling the heat equalizing plate from the substrate in the state of the same potential. An apparatus for forming an insulating film. 2. The substrate holding mechanism exposes a conductive pattern surface of the substrate, inserts the substrate, inserts the heat equalizing plate over the back surface of the substrate, and heats the substrate and the heat equalizing plate. A metal frame-shaped tray having a pressing plate for fixing the plate, an outer peripheral portion of the tray with which a clamp for holding the tray abuts, the tray for holding the substrate and the heat equalizing plate. An insulating member arranged so as to partition the inner peripheral portion of the tray, and a region electrically connected to the inner peripheral portion of the tray is formed in the outer peripheral portion of the tray. The film formation processing apparatus for an insulating film according to claim 1. 3. The film forming apparatus for an insulating film according to claim 2, wherein a plurality of gas vent holes are formed in the heat equalizing plate. 4. The apparatus for depositing an insulating film according to claim 2, further comprising an insertion / removal mechanism for vacuum-adsorbing the heat equalizing plate and the substrate and inserting or removing the same into or from the tray. 5. The apparatus for depositing an insulating film according to claim 1, further comprising means for reducing static electricity charged on the substrate before peeling off the heat equalizing plate. 6. The apparatus for depositing an insulating film according to claim 5, further comprising means for blowing an inert gas onto the surface on which the insulating film is formed, as means for reducing the static electricity. 7. The insulating film deposition processing apparatus according to claim 6, wherein the charge for neutralizing the static electricity is contained in the inert gas. 8. The insulating film deposition processing apparatus according to claim 1, further comprising a knockout pin that pushes the substrate and peels the heat equalizing plate from the substrate as the peeling means. 9. A stage with a built-in heater housed in a depressurized container, and an electrode arranged in the container facing the grounded stage and connected to a high frequency power source. A tray that is placed on the stage through a soaking plate made of metal and is brought into contact with the soaking plate to hold the substrate that is the film formation object and the soaking plate in an overlapping manner. Reduced pressure C
In a VD apparatus, a growth gas is introduced into the container and high-frequency power is applied between the stage and the electrode to form plasma, and an insulating film is formed on the substrate exposed from the opening of the tray at ground potential. After that, the container is returned to the atmosphere and the tray is separated from the stage with the soaking plate, and the tray is kept while maintaining the electric potential of static electricity charged on the substrate in a state of being floated from the ground potential. Is carried out of the container, and the soaking inside the tray is carried out.
A method for forming a film of an insulating film, characterized in that the heat equalizing plate and the substrate are peeled off while the plate and the substrate are at the same potential . 10. The tray is connected to the tray when the tray is separated from the stage, the ground wire is cut off, the tray is held by an insulating member, and the tray is held outside the container. 10. The method for forming a film of an insulating film according to claim 9, which is carried out. 11. The method for forming a film of an insulating film according to claim 9, wherein an inert gas is blown to the insulating film of the substrate. 12. The process for forming an insulating film according to claim 10, wherein the inert gas contains a charge that neutralizes the charge of the static electricity. 13. The method according to claim 9, wherein gas is introduced into a gap between the substrate and the heat equalizing plate to separate the substrate and the heat equalizing plate from each other. 14. The method for forming an insulating film according to claim 9, wherein the substrate and the heat equalizing plate are separated from each other by air pressure and the substrate and the heat equalizing plate are separated from each other. 15. The substrate and the heat equalizing plate are sucked and held by a vacuum pad when the substrate and the heat equalizing plate are taken out from or inserted into the tray. Method for forming an insulating film.