JP3425917B2 - TCP semiconductor device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a TAB (Tape A
utomated Bonding) A semiconductor device in which semiconductor elements are mounted on a flexible wiring board called a tape, that is, T
A CP (Tape Carrier Package) semiconductor device.

[0002]

2. Description of the Related Art In a TCP semiconductor device, a TAB tape is provided with an opening (device hole) for mounting a semiconductor element, and a wiring pattern end portion called an inner lead is projected to the opening and a tip portion of the inner lead. The bump electrode on the semiconductor element is thermo-pressure bonded by the inner lead bonding device. The inner lead formed around the device hole has a thickness of 15 to 50 μm, which is called a solder resist to provide insulation, and a printing accuracy of ± 150 μm.
It is covered with a strip of polyimide resin or urethane / epoxy resin. The semiconductor element mounted on the TAB tape is
A liquid sealing resin is applied to the upper part of the semiconductor device by a potting device and is cured to seal the semiconductor element and the periphery of the device hole to maintain insulation from the outside.
In the TCP semiconductor device, the inner lead is electrically connected to the corresponding bump electrode of the semiconductor element, and the other end (outer lead) is connected to an external circuit such as a liquid crystal panel or a printed circuit board.

[0003]

At present, TCP semiconductor devices are required to have high output in addition to miniaturization and thinning.
In particular, regarding the reduction in thickness, it is necessary to solve the problem of reducing the thickness of the insulating member while sufficiently ensuring the insulating property of the semiconductor element. Further, it is necessary to print a solder resist on the inner leads near the mounting portion of the semiconductor element in order to limit the application area of the fluid resin. Also,
Potting the resin under the conventional conditions using the conventional solder resist pattern exceeds the planned resin area or exposes the wiring pattern due to insufficient resin area, resulting in frequent appearance defects and deterioration of quality. There was a problem that it would be connected.

Summarizing these problems, when the printing accuracy of the solder resist film is poor, the formation position varies and the inner leads cannot be sufficiently covered with the sealing resin. ing. Since the solder resist film itself has a low degree of freedom in terms of shape and the width of the solder resist cannot be reduced, TCP
The external size of the semiconductor device increases. It is difficult to reduce the resin area. Since the sealing resin covers the solder resist film, the size of the TCP semiconductor device cannot be reduced. The present invention has been made in consideration of such circumstances, and provides a TCP semiconductor device which can be downsized, thinned, and increased in output by partially removing the coating region of the solder resist film. Is.

[0005]

The present invention is directed to a flexible tape substrate having a rectangular opening, a plurality of wiring patterns provided on the front surface of the substrate, and a substrate from the opening provided on the back surface of the substrate. A semiconductor element having a plurality of protruding electrodes exposed on the surface, the opening is perforated such that its short side is parallel to the longitudinal direction of the tape substrate, and each of the plurality of wiring patterns has an opening at each end. A first pattern group extending from one long side of the portion into the opening and connected to the protruding electrode of the semiconductor element, and each end extending from the other long side of the opening into the opening. Second connected to the protruding electrode of the semiconductor element
A pattern group, a third pattern group in which each end extends from one short side of the opening into the opening and is connected to the protruding electrode of the semiconductor element, and each end is the other short side of the opening. From the first to fourth pattern groups, the first pattern pattern group and the fourth pattern group being connected to the protruding electrodes of the semiconductor element. The present invention provides a TCP semiconductor device, which is covered with a solder resist layer from each side for a predetermined distance, and the periphery of the opening of the substrate and the surface exposed in the opening of the semiconductor element are covered with a sealing resin.

[0006]

In the present invention, a semiconductor element has, for example, a rectangular planar shape, and a plurality of protruding electrodes, that is, bumps, are formed along a peripheral portion of the semiconductor element. In this semiconductor element, predetermined integrated circuits such as a logic circuit and a memory circuit are formed on a semiconductor substrate such as a silicon single crystal, and bumps made of a material such as Au are used as external terminals of these integrated circuits. It is provided on the main surface.

The tape substrate, that is, the tape carrier is composed of, for example, a tape (substrate base material) which is a base material of the tape carrier and a wiring pattern which is adhered to the main surface of the tape through an adhesive material. The central portion of the tape carrier has a shape slightly larger than the semiconductor element, and is opened so that the main surface of the semiconductor element is exposed. One end of the wiring pattern constituting the tape substrate, that is, the inner lead is connected to the bump of the semiconductor element, and the other end, that is, the outer lead is connectable to the external circuit. The number of wiring patterns is appropriately determined according to the number of protruding electrodes of the semiconductor element.

The tape constituting the tape carrier is made of a material such as polyimide resin, and the wiring pattern is made of a material such as Cu.
In the inner lead and outer lead portions of this wiring pattern, a plating layer made of a material such as Sn is formed on the front surface and the back surface of the core material.

The solder resist layer is made of an insulating material such as epoxy resin or polyimide resin,
In order to electrically protect the exposed portion of the wiring pattern of the tape carrier, it is formed in a predetermined range on the main surface of this wiring pattern.

The sealing resin is made of a material such as epoxy resin, and is applied to the peripheral portion of the opening and the surface exposed to the opening of the semiconductor element to cover the bonding portion between the bump of the semiconductor element and the inner lead. , It protects the bonding part from external stress and protects it from the external environment such as moisture and contaminants.

The wiring pattern has a first pattern group in which each end (inner lead) extends from one long side of the opening into the opening and is connected to the protruding electrode of the semiconductor element, and each end. A second pattern group in which a portion (inner lead) extends from the other long side of the opening into the opening and is connected to the protruding electrode of the semiconductor element, and each end (inner lead) forms one opening. A third pattern group extending from the short side into the opening and connected to the protruding electrode of the semiconductor element, and each end (inner lead) extending from the other short side of the opening into the opening. And a fourth pattern group connected to the protruding electrode of the semiconductor element, wherein the first to fourth pattern groups are solders over a predetermined distance from each side of the opening except at least one of the first and second pattern groups. Coated with resist layer and the surface exposed from the opening of the opening portion and the semiconductor element substrate is enveloped by a sealing resin.

That is, in the present invention, the next wiring pattern is not covered with the solder resist layer but with the sealing resin. (1) Both the first and second pattern groups, or (2) only the first pattern group, or (3) only the second pattern group. The thickness of the portion not covered with the solder resist layer can be reduced accordingly. Furthermore, since the third and fourth pattern groups are covered with the solder resist layer, they are not exposed even if they are not sufficiently covered with the sealing resin. In the present invention, the sealing resin is a fluid resin applied to the periphery of the opening and the semiconductor element and cured, and at least one of the first and second pattern groups not covered with the solder resist layer is a wiring line. It is preferable that the pattern has a protrusion in the vicinity of the opening, thereby stopping the flow of the fluid resin. Further, the tape substrate may further include an elongated slit extending in the width direction of the tape substrate across a part of the wiring pattern, and the slit and its vicinity may be covered from both sides with a solder resist layer. The flexibility of the tape substrate is improved in this slit portion.

The TCP semiconductor device of the present invention is manufactured by the following steps. First, a semiconductor element for which a wafer processing step has been completed, a tape carrier in which a wiring pattern having inner leads and outer leads is formed on a flexible tape, a resin for resin sealing, and the like are prepared.
The tape substrate is, for example, a TAB tape wound around a reel.

The tape carrier is formed by forming a thin metal film such as Cu on a tape made of polyimide resin by adhesion, forming a necessary pattern on the metal film with a resist by using a photographic technique, and then performing etching. It can be produced by forming a necessary wiring pattern and then performing Sn plating on the surfaces of the inner leads and the outer leads of the wiring pattern.

Then, in a lead bonding step of the inner lead, the inner lead at one end of the wiring pattern of the tape carrier, which is sequentially supplied by the amount corresponding to one semiconductor element from the state wound on the reel, and the semiconductor element. The alignment is performed so that the relative positions of the bumps and the bumps match.

Then, the inner leads of the wiring pattern are deformed into a substantially S shape by a bonding tool,
The semiconductor chip is bumped down and the inner leads and the bumps are connected (bonded) by a method such as thermocompression bonding.

Next, a solder resist is printed on a desired portion of the wiring pattern on the tape substrate to electrically protect the exposed portion of the wiring pattern, and thereafter, a bonding portion between the semiconductor bump and the inner lead of the wiring pattern is For example, resin such as epoxy resin is applied as a sealing resin from a dispenser nozzle of a potting device.

Finally, the electrical characteristics of the semiconductor device having the final TCP structure are inspected and the assembly process is completed.
It should be noted that the semiconductor device on which this assembly process is completed is packaged in a tape state wound on a reel and then shipped to the user.

Thereafter, in the user, for example, FIG.
The portion surrounded by the chain line 17 is cut out, for example, the outer lead on the input side is soldered onto the wiring of the printed wiring board, and the outer lead on the output side is connected to the LCD via an anisotropic conductive sheet or the like, for example It can be used as an LCD driver for driving an LCD of a personal computer, an LCD controller of a mobile phone, and the like.

The present invention will be described in detail below with reference to the embodiments shown in the drawings. It should be noted that common components are denoted by common reference numerals and description thereof is omitted.

Embodiment 1 FIG. 1 is a plan view of a TCP semiconductor device of Embodiment 1, FIG. 3 is a sectional view taken along the line AA of FIG. 1, and FIGS. 2 and 4 are conventional TCs.
It is each corresponding figure of P semiconductor device. 1 and 3,
The tape substrate, that is, the tape carrier 30, is formed by forming a plurality of copper foil wiring patterns 1 on the surface of a flexible base material 6 made of a polyimide resin. A rectangular opening 12 of 1.5 mm × 18 mm is formed in the central portion of the tape carrier 30 such that its short side is parallel to the longitudinal direction of the tape carrier 30.

A semiconductor element 8 of 1.5 mm × 1.8 mm × 0.65 mm is provided on the back surface of the tape carrier 30,
A plurality of bump electrodes provided on the upper surface of the semiconductor element 8, that is, the bumps 7, are exposed on the surface of the tape carrier 30 through the openings 12. The first pattern group 1a of the plurality of wiring patterns 1 is composed of eight linear patterns, and each end portion, that is, the inner lead 5 extends from one long side of the opening 12 into the opening 12. 1 of semiconductor element 8
It is connected to the bumps 7 arranged on one of the longer sides.

The second pattern group 1b has 25
Each of the inner leads 5 has a linear pattern and extends from the other long side of the opening 12 into the opening 12 and is connected to the bumps 7 arranged on the other long side of the semiconductor element 8.

The third pattern group 1c consists of two L-shaped patterns having different lengths, and each inner lead 5
Are extended from one short side of the opening 12 into the opening 12 and are connected to the bumps 7 arranged on one short side of the semiconductor element 8.

The fourth pattern group 1d is composed of two L-shaped patterns having different lengths, and each inner lead 5
From the other short side of the opening 12 into the opening 12 and are connected to the bumps 7 arranged on the other short side of the semiconductor element 8.

Except for the first and second pattern groups 1a and 1b, only the third and fourth pattern groups 1c and 1d are covered with the solder resist layer 10 over a predetermined distance from each short side of the opening 12. . further,
Inside the resin region 14 at the periphery of the opening 12 and the semiconductor element 8
The surface exposed in the opening 12 is covered with the sealing resin 9.

Further, the slit 13 extending in the width direction of the tape carrier 30 in FIG. 1 is provided so that the tape carrier 30 can be easily bent at that portion. Further, sprocket holes 18 for transporting the tape carrier 30 are formed at both edges of the tape carrier 30 in a row at equal intervals.

In the conventional TCP semiconductor device, as shown in FIGS. 2 and 4, four sides around the opening 12 are covered with the solder resist layer 10, and the resin 9 covering the semiconductor element 8 itself is covered with the solder resist layer. Because it overlaps 10,
As a result, the thickness of the TCP semiconductor device is increased. However, in Example 1, the solder resist layer 10 is not formed on the two long sides of the four sides around the opening 12, and the wiring pattern exposed portions on the two long sides are covered only with the resin 9. The thickness of the resin 9 can be made thin because the solder resist layer 10 has no thickness.

Embodiment 2 In FIGS. 5 and 6, one of the first and second pattern groups 1a and 1b on the two long sides of the surrounding four sides is omitted in advance and the resin 9 including the semiconductor element 8 is omitted. It is covered by. Other configurations are the same as those in the first embodiment. This embodiment is used for applications where the resin thickness or the resin region is restricted on either of the two long sides of the opening 12.

When the resin 9 is in a liquid state, the amount of the filler can be increased to suppress the fluidity of the filler. If the resin area becomes large, it is against size reduction.
It is preferable to suppress the spread within μm.

Embodiment 3 In this embodiment, as shown in FIG. 7, the pattern groups 1b, 1c and 1d of the embodiment 1 (FIG. 1) are replaced with pattern groups 1e, 1f and 1g, respectively. Then, in the vicinity of the opening 12, the pattern group 1
Only f and 1 g are coated with the solder resist layer 10, and the sealing resin 9 is coated thereon in the same manner as in Example 1 (other configurations are the same as those in Example 1). This is because the pattern groups 1f and 1g have a portion that runs in the width direction of the tape carrier 30, so that the diffusion of the resin 9 in the longitudinal direction of the tape carrier 30 is reduced by that portion, and the resin 9
This makes it difficult to cover with. Therefore, in this embodiment, that portion is covered with the solder resist layer, so that the application area of the resin 9 can be reduced.

Example 4 In this example, as shown in FIG. 8, a slit 11 in the width direction is added to the tape carrier 30 in comparison with Example 3 (FIG. 7), and pattern groups 1e, 1
f, 1 g and the slit 11 are covered with the solder resist layer 10. Here, the back surface of the slit 11 is also covered with a solder resist layer. Other configurations are the same as those in the third embodiment.

In Examples 1 to 4, the wiring pattern 1 which is not covered with the solder resist layer 10 but is covered only with the sealing resin 9 does not have the solder resist layer 10. There may be a problem that the application area is out of the defined area. In order to reliably prevent this inconvenience, the corresponding wiring pattern 1
Is provided with a protrusion 20 as shown in FIG. As a result, the flow of the liquid resin flowing in the direction of the arrow Y is blocked by the protrusion 20, so that the application region can be kept within the regulation line 19.

FIG. 10 is a detailed view of an essential part of FIG. 9, and when the wiring patterns 1 having the width a are arranged at a distance a, the protrusion length of the triangular protrusion 20 is set to a / 2, Between the adjacent wiring patterns, the protrusion 20 has the wiring pattern 1
It is shown that they are provided so as to be offset from each other by a distance L in the longitudinal direction. 9 and 10, the protrusion 20 has a triangular shape, but may have a quadrangular shape or another shape. According to the present invention, there is no appearance defect due to the exposure of the inner leads of the TCP semiconductor device and stable production can be achieved.

[0035]

According to the present invention, since a part of the solder resist can be removed, the device can be made smaller and thinner.

[Brief description of drawings]

FIG. 1 is a plan view of a TCP semiconductor device according to a first embodiment of the present invention.

FIG. 2 shows a plan view of a conventional TCP semiconductor device.

3 is a sectional view taken along the line AA of FIG.

4 is a cross-sectional view taken along the line AA of FIG.

FIG. 5 is a plan view showing an example of a TCP semiconductor device according to a second embodiment of the present invention.

FIG. 6 is a plan view showing another example of the TCP semiconductor device according to the second embodiment of the present invention.

FIG. 7 is a plan view of a TCP semiconductor device according to a third embodiment of the present invention.

FIG. 8 is a plan view of a TCP semiconductor device according to a fourth embodiment of the present invention.

FIG. 9 is a plan view of a wiring pattern of a TCP semiconductor device according to the present invention.

10 is an enlarged view of a main part of FIG.

[Explanation of symbols]

1 wiring pattern 5 Inner lead 6 base material 7 Bumbu 8 Semiconductor elements 9 resin 10 Solder resist layer 11 slits 12 openings 13 slits 14 Resin area 17 User Area 18 Sprocket Hall 19 Normal line 20 protrusions

─────────────────────────────────────────────────── --- Continuation of the front page (56) References JP-A-4-372145 (JP, A) JP-A-10-270504 (JP, A) JP-A-7-297233 (JP, A) JP-A-11- 265911 (JP, A) Registered utility model 3010738 (JP, U) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/60 H01L 23/12 H01L 23/29 H01L 23/31

Claims (3)

(57) [Claims] 1. A flexible tape substrate having a rectangular opening, a plurality of wiring patterns provided on the front surface of the substrate, and a plurality of protruding electrodes provided on the back surface of the substrate and exposed from the opening to the front surface of the substrate. And a semiconductor element having a plurality of wiring patterns, wherein each of the plurality of wiring patterns has an end opening from one long side of the opening. A first pattern group that extends into the opening and is connected to the protruding electrode of the semiconductor element, and each end portion extends from the other long side of the opening into the opening and is connected to the protruding electrode of the semiconductor element. A second pattern group, each end of which extends from one short side of the opening into the opening and is connected to the protruding electrode of the semiconductor element; The protruding electrode of the semiconductor element by extending from the short side of the And a fourth pattern group connected to the first to fourth pattern groups are covered with a solder resist layer over a predetermined distance from each side of the opening except at least one group of the first and second pattern groups, A TCP semiconductor device in which the periphery of the opening of the substrate and the surface exposed to the opening of the semiconductor element are wrapped with a sealing resin. 2. A sealing resin is obtained by applying a fluid resin to an opening periphery and a semiconductor element and curing the resin, and at least one of the first and second pattern groups which is not covered with a solder resist layer has each wiring. The TCP semiconductor device according to claim 1, wherein the pattern has a protrusion in the vicinity of the opening, thereby stopping the flow of the fluid resin. 3. The tape substrate according to claim 1, further comprising an elongated slit extending in the width direction of the tape substrate across a part of the wiring pattern, and the slit and its vicinity are covered with a solder resist layer from both sides. TC
P semiconductor device.