JP3417042B2 - Method for manufacturing electronic component having high power withstanding Al alloy electrode - Google Patents
Method for manufacturing electronic component having high power withstanding Al alloy electrodeInfo
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- JP3417042B2 JP3417042B2 JP07075994A JP7075994A JP3417042B2 JP 3417042 B2 JP3417042 B2 JP 3417042B2 JP 07075994 A JP07075994 A JP 07075994A JP 7075994 A JP7075994 A JP 7075994A JP 3417042 B2 JP3417042 B2 JP 3417042B2
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、残渣および腐食を生じ
ることなく、反応性イオンエッチング（ＲＩＥ）を行う
ことのできる高耐電力Ａｌ合金電極を有する電子部品の
製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an electronic component having a high power withstanding Al alloy electrode capable of performing reactive ion etching (RIE) without causing residue and corrosion.
【０００２】[0002]
【従来の技術】従来、ＳＡＷデバイスにおいては、電極
材料に主として純Ａｌを用いている。しかし、純Ａｌで
は、デバイスが高電力で使用される場合、電極がストレ
スマイグレ−ションのため、断線あるいはショ−トする
ことがある。したがって、これを解決するために、純Ａ
ｌにＣｕを１ｗｔ％添加して合金化して耐電力の向上を
図っている。2. Description of the Related Art Conventionally, in a SAW device, pure Al is mainly used as an electrode material. However, with pure Al, when the device is used at high power, the electrodes may be broken or short due to stress migration. Therefore, in order to solve this, pure A
1 wt% of Cu is added to 1 to form an alloy to improve the withstand power.
【０００３】現在は、電極製造方法として、エッチング
ガスにＣｌ系ガスを使用し、微細加工に優れたＲＩＥを
採用している。しかし、耐電力性を上げるためＡｌを合
金化することによりＲＩＥが困難となった。ＲＩＥ時の
Ａｌ−Ｃｕは、Ｃｌ系ガスのラジカルによる化学反応で
の揮発（ＡｌＣｌ3 、ＣｕＣｌ2 ，Ａｌ2 ＣｕＣｌ8等
の形で揮発）とイオンによる物理的スパッタとで、エッ
チングされる。しかし、ＣｕＣｌ2 は、ＡｌＣｌ3 に比
べて蒸気圧が低いので、ラジカルによる揮発速度が遅く
なる。そのため、ＣｕＣｌ2 は、ＲＩＥ後も基板および
電極部に残渣として残る。また、ＣｕＣｌ2 は、空気中
のＨ2 ０と反応してＨＣｌを生成し、電極を腐食（アフ
タ−コロ−ジョン）させる。At present, as an electrode manufacturing method, Cl-based gas is used as an etching gas and RIE excellent in fine processing is adopted. However, RIE became difficult by alloying Al in order to improve power resistance. Al-Cu at the time of RIE is etched by volatilization (volatilization in the form of AlCl 3 , CuCl 2 , Al 2 CuCl 8 etc.) in the chemical reaction by radicals of Cl-based gas and physical sputtering by ions. However, since CuCl 2 has a lower vapor pressure than AlCl 3 , the rate of volatilization by radicals becomes slow. Therefore, CuCl 2 remains as a residue on the substrate and the electrode portion even after RIE. Also, CuCl 2 reacts with H 2 0 in the air to generate HCl, which corrodes the electrode (after-corrosion).
【０００４】これを解決するために、ＲＩＥ時に、Ａｌ
−ＣｕにＡｌＣｌ3 を供給し、ＣｕＣｌ2 をＡｌ2 Ｃｕ
Ｃｌ8 の形にして、揮発を促進させることが報告されて
いる。この方法は、ＳＭＴＲＩＥ（Static Magnetoron
Triode RIE）装置を用い、且つ、この装置の第２カソ−
ドをＡｌにして、ＲＩＥ中にＡｌＣｌ3 を発生させると
いうものである。しかしながら、この方法は、ＳＭＴＲ
ＩＥ装置という特殊な設備を必要とするという欠点を有
している。To solve this, at the time of RIE, Al
The AlCl 3 is supplied to -cu, the CuCl 2 Al 2 Cu
It has been reported to promote volatilization in the form of Cl 8 . This method is based on SMTRIE (Static Magnetoron
Triode RIE) equipment and the second cascade of this equipment
The Al is used as Al and the AlCl 3 is generated during RIE. However, this method
It has the drawback of requiring special equipment called an IE device.
【０００５】[0005]
【発明が解決しようとする課題】以上のように、従来の
技術および設備では、ＳＡＷデバイスのみならず、それ
以外の電子部品においても、高耐電力性を有する微細な
Ａｌ合金電極を、残渣、腐食なくＲＩＥすることが不可
能であった。As described above, according to the conventional techniques and equipment, not only SAW devices but also other electronic components, fine Al alloy electrodes having high power resistance are used as residues, It was impossible to perform RIE without corrosion.
【０００６】したがって、本発明は、残渣、腐食なくＲ
ＩＥすることができ、高耐電力性を有し、そして特殊な
ＳＭＴＲＩＥ装置を必要としない微細な高耐電力Ａｌ合
金電極を有する電子部品の製造方法を提供することを目
的とする。Therefore, according to the present invention, R
An object of the present invention is to provide a method of manufacturing an electronic component having fine high-power-resistant Al alloy electrodes which can be subjected to IE, has high power-resistant property, and does not require a special SMTRIE device.
【０００７】[0007]
【課題を解決するための手段】本発明の課題に対する解
決手段は以下の通りである。
１．基板上に、純Ａｌ層を形成する工程と、前記純Ａｌ
層上に、添加物を微量含有するＡｌ合金電極層を形成す
る工程と、 前記Ａｌ合金電極層上に、レジストにより
電極をパタ−ンニングして、前記Ａｌ合金電極層および
純Ａｌ層をドライエッチングする工程と、前記純Ａｌ層
およびＡｌ合金電極をアニ−ルして、Ａｌ合金電極の添
加物を、前記純Ａｌ層に拡散させる工程と、よりなる高
耐電力Ａｌ合金電極を有する電子部品の製造方法。Means for solving the problems of the present invention are as follows. 1. Forming a pure Al layer on the substrate,
A step of forming an Al alloy electrode layer containing a trace amount of an additive on the layer, and patterning an electrode with a resist on the Al alloy electrode layer to dry-etch the Al alloy electrode layer and the pure Al layer. And a step of annealing the pure Al layer and the Al alloy electrode to diffuse the additive of the Al alloy electrode into the pure Al layer. Production method.
【０００８】２．上記１項記載の製造方法において、ア
ニ−ル条件として、温度が１００〜３００℃で、時間が
５〜３００分である高耐電力Ａｌ合金電極を有する電子
部品の製造方法。2. In the manufacturing method described in the above item 1, as an annealing condition, a temperature is 100 to 300 ° C. and a time is 5 to 300 minutes.
【０００９】３．上記１項記載の製造方法において、添
加物がＣｕ、Ｔｉ、Ｐｄ、Ｎｉ、Ｓｉ、Ｆｅ、Ｍｎ、Ｃ
ｒ、Ｚｎ又はＬｉである高耐電力Ａｌ合金電極を有する
電子部品の製造方法。3. In the manufacturing method described in the above item 1, the additives are Cu, Ti, Pd, Ni, Si, Fe, Mn, and C.
A method of manufacturing an electronic component having a high-power-resistant Al alloy electrode which is r, Zn, or Li.
【００１０】４．上記３項記載の添加物の添加量が、
０．１〜２０ｗｔ％である高耐電力Ａｌ合金電極を有す
る電子部品の製造方法。4. The addition amount of the additive described in the above item 3 is
A method of manufacturing an electronic component having a high power resistant Al alloy electrode of 0.1 to 20 wt%.
【００１１】５．上記１項記載の製造方法において、純
Ａｌ層２の膜厚が、１００〜５０００オンク゛ストロ-ムの範囲
にある高耐電力Ａｌ合金電極を有する電子部品の製造方
法。5. The method for manufacturing an electronic component according to the above item 1, wherein the pure Al layer 2 has a high power-resistant Al alloy electrode having a film thickness in the range of 100 to 5,000 Å.
【００１２】６．上記１項記載の製造方法において、Ａ
ｌ合金電極層の膜厚が、１００〜５０００オンク゛ストロ-ムの
範囲にある高耐電力Ａｌ合金電極を有する電子部品の製
造方法。6. In the manufacturing method described in the above item 1, A
A method for manufacturing an electronic component having a high-power-resistant Al alloy electrode in which the film thickness of the 1-alloy electrode layer is in the range of 100 to 5000 angstroms.
【００１３】７．上記１項記載の製造方法において、上
記２項、上記３項、上記４項、上記５項および上記６項
記載の高耐電力Ａｌ合金電極を有する電子部品の製造方
法。7. The method of manufacturing an electronic component having the high-power-resistant Al alloy electrode according to the above-mentioned item 2, item 3, item 4, item 5, and item 6, in the method described in item 1.
【００１４】[0014]
【作用】本発明は、基板とＡｌ合金電極層との間に、純
Ａｌ層を形成したことにより、Ａｌ合金電極層の下層に
純Ａｌ層があるので、ＲＩＥ中基板上に多量のＡｌＣｌ
3 が供給される。ＣｕＣｌ2 は、ＡｌＣｌ3 が充分供給
されると、Ａｌ2 ＣｕＣｌ8 となって揮発（１２０℃で
揮発する）しやすくなるので、Ａｌ合金電極層を残渣、
腐食なくＲＩＥすることができる。According to the present invention, since the pure Al layer is formed between the substrate and the Al alloy electrode layer, the pure Al layer is below the Al alloy electrode layer. Therefore, a large amount of AlCl is deposited on the substrate during RIE.
3 is supplied. CuCl 2 becomes Al 2 CuCl 8 and easily volatilizes (volatilizes at 120 ° C.) when AlCl 3 is sufficiently supplied.
RIE can be performed without corrosion.
【００１５】本発明は、ＲＩＥ後、アニ−ルして、上層
のＡｌ合金層を下層の純Ａｌ層に拡散させ、合金化する
ことにより、高耐電力性を得ることができる。According to the present invention, after RIE, annealing is performed to diffuse the upper Al alloy layer into the lower pure Al layer for alloying to obtain high power resistance.
【００１６】[0016]
【実施例】つぎに、本発明の実施例として、準マイクロ
波帯ＳＡＷデバイス用高耐電力Ａｌ−Ｃｕ合金電極を形
成する方法について説明する。EXAMPLE Next, as an example of the present invention, a method for forming a high power resistant Al—Cu alloy electrode for a quasi-microwave band SAW device will be described.
【００１７】図１に示すように、ＬｉＴａＯ3 、ＬｉＮ
ｂＯ3 などの圧電基板１上に、蒸着、スパッタ等の薄膜
形成手段により、純Ａｌ層２を５００オンク゛ストロ-ム成膜す
る。なお、この純Ａｌ層２の膜厚は、１００〜５０００
オンク゛ストロ-ムの範囲で可能である。As shown in FIG. 1, LiTaO 3 , LiN
On the piezoelectric substrate 1 made of bO 3 or the like, a pure Al layer 2 is formed to a thickness of 500 Å by a thin film forming means such as vapor deposition or sputtering. The thickness of the pure Al layer 2 is 100 to 5000.
It is possible in the on-range range.
【００１８】さらに、図２に示すように、純Ａｌ層２上
に、図１に示す工程と同一バッチで連続して、Ａｌ合金
電極層の一例であるＡｌ−Ｃｕ層３を、３０００オンク゛スト
ロ-ム成膜する。なお、このときのＣｕの添加量は、２ｗ
ｔ％であるが、添加量の範囲は、０．１〜２０ｗｔ％が
可能である。また、このＣｕは、耐電力性を増すために
添加するものであるが、Ｃｕ以外に、同目的のために、
Ｔｉ、Ｐｄ、Ｎｉ、Ｓｉ、Ｆｅ、Ｍｎ、Ｃｒ、Ｚｎ、Ｌ
ｉ，Ｍｇ等の添加物を、０．１〜２０ｗｔ％添加するこ
ともできる。これらの添加物を含有するＡｌ合金電極層
の膜厚は、１００〜５０００オンク゛ストロ-ムの範囲で可能で
ある。Further, as shown in FIG. 2, an Al—Cu layer 3 as an example of an Al alloy electrode layer is continuously formed on the pure Al layer 2 in the same batch as the step shown in FIG. Film formation. The amount of Cu added at this time is 2w.
Although it is t%, the range of the addition amount can be 0.1 to 20 wt%. Further, Cu is added to increase the power resistance, but in addition to Cu, for the same purpose,
Ti, Pd, Ni, Si, Fe, Mn, Cr, Zn, L
Additives such as i and Mg may be added in an amount of 0.1 to 20 wt%. The film thickness of the Al alloy electrode layer containing these additives can be in the range of 100 to 5000 angstroms.
【００１９】図３に示すように、通常のフォトリソグラ
フィを用いて、Ａｌ−Ｃｕ層３上に、レジスト４を希望
の電極パタ−ンに形成する。As shown in FIG. 3, a resist 4 is formed in a desired electrode pattern on the Al--Cu layer 3 by using ordinary photolithography.
【００２０】図４に示すように、レジスト４をマスクと
して、ＲＩＥを用いて、Ａｌ−Ｃｕ層３および純Ａｌ層
２をドライエッチングする。その後、レジスト４を除去
する。As shown in FIG. 4, the Al—Cu layer 3 and the pure Al layer 2 are dry-etched by RIE using the resist 4 as a mask. Then, the resist 4 is removed.
【００２１】図５に示すように、おいて、純Ａｌ層２お
よびＡｌ−Ｃｕ層３を２００℃で３０分間アニ−ルす
る。その結果、上層のＡｌ−Ｃｕ層３中のＣｕが、下層
の純Ａｌ層２中に拡散して、全体がＡｌ−Ｃｕ層５とな
る。なお、アニ−ル条件としては、温度は１００〜３０
０℃、時間は５〜３００分が適当である。As shown in FIG. 5, the pure Al layer 2 and the Al—Cu layer 3 are annealed at 200 ° C. for 30 minutes. As a result, Cu in the upper Al—Cu layer 3 diffuses into the lower pure Al layer 2 to become the Al—Cu layer 5 as a whole. In addition, as the annealing condition, the temperature is 100 to 30.
It is suitable that the temperature is 0 ° C. and the time is 5 to 300 minutes.
【００２２】以上の工程により、ＳＡＷデバイス用高耐
電力Ａｌ−Ｃｕ合金電極を、残渣、腐食なくＲＩＥする
ことが可能となった。本実施例と従来例により形成され
たＲＩＥ後のＳＡＷデバイスの電極形状写真を、図６
（本実施例）および図７（従来例）に示す。条件等は表
１の通りである。Through the above steps, it becomes possible to perform RIE on the high power resistant Al-Cu alloy electrode for SAW devices without any residue or corrosion. FIG. 6 is a photograph of the electrode shape of the SAW device after RIE formed in this example and the conventional example.
(This embodiment) and FIG. 7 (conventional example) are shown. The conditions are as shown in Table 1.
【００２３】[0023]
【表１】 [Table 1]
【００２４】この図７の従来例においては、電極（Ａｌ
−Ｃｕ）の一面に、腐食（黒い斑点）が生じているが、
図６の本実施例においては、このような腐食が生じてい
ないことが理解できる。In the conventional example of FIG. 7, the electrode (Al
-Cu) has corrosion (black spots) on one surface,
It can be understood that such corrosion does not occur in this embodiment shown in FIG.
【００２５】[0025]
【発明の効果】本発明は、基板とＡｌ合金電極層との間
に、純Ａｌ層を形成したことにより、Ａｌ合金電極層の
下層に純Ａｌ層があるので、ＲＩＥ中基板上に多量のＡ
ｌＣｌ3 が供給される。ＣｕＣｌ2 は、ＡｌＣｌ3 が充
分供給されると、Ａｌ2 ＣｕＣｌ8 となって揮発（１２
０℃で揮発する）しやすくなるので、Ａｌ合金電極を残
渣、腐食なくＲＩＥすることができる。According to the present invention, since the pure Al layer is formed between the substrate and the Al alloy electrode layer, there is a pure Al layer below the Al alloy electrode layer, so that a large amount of the Al alloy electrode layer is formed on the substrate during RIE. A
lCl 3 is supplied. CuCl 2 becomes Al 2 CuCl 8 and volatilizes (12 when AlCl 3 is sufficiently supplied).
It easily volatilizes at 0 ° C.), so that RIE can be performed on the Al alloy electrode without any residue or corrosion.
【００２６】、本発明は、ＲＩＥ後、アニ−ルして、上
層のＡｌ合金電極層を下層の純Ａｌ層に拡散させ、合金
化することにより、高耐電力性を得ることができる。According to the present invention, high power resistance can be obtained by annealing after RIE to diffuse the upper Al alloy electrode layer into the lower pure Al layer for alloying.
【００２７】また、本発明は、Ａｌ合金電極層の下層に
ＡｌＣｌ3 の供給源（純Ａｌ層）を形成したことによ
り、ＳＭＴＲＩＥ装置を用いなくても、ＡｌＣｌ3 の添
加効果を実現できる。Further, according to the present invention, since the supply source of AlCl 3 (pure Al layer) is formed under the Al alloy electrode layer, the effect of adding AlCl 3 can be realized without using the SMTRIE device.
【図１】 本発明の一実施例工程（図１〜図５）におい
て、圧電基板に純Ａｌ層を形成する工程図FIG. 1 is a process diagram of forming a pure Al layer on a piezoelectric substrate in a process (FIGS. 1 to 5) of one embodiment of the present invention.
【図２】 前記純Ａｌ層上にＡｌ−Ｃｕ層を形成する工
程図FIG. 2 is a process diagram of forming an Al—Cu layer on the pure Al layer.
【図３】 前記Ａｌ−Ｃｕ層上にレジストをパタ−ニン
グする工程図FIG. 3 is a process diagram of patterning a resist on the Al-Cu layer.
【図４】 前記Ａｌ−Ｃｕ層をＲＩＥする工程図FIG. 4 is a process diagram of RIE of the Al—Cu layer.
【図５】 アニ−ルにより前記Ａｌ−Ｃｕ層の添加物を
純Ａｌ層中に拡散させる工程図FIG. 5 is a process diagram of diffusing the additive of the Al—Cu layer into a pure Al layer by annealing.
【図６】 本実施例の顕微鏡写真図FIG. 6 is a photomicrograph of the present embodiment.
【図７】 従来例の顕微鏡写真図FIG. 7 is a photomicrograph of a conventional example.
１ 圧電基板 ２ 純Ａｌ層 ３、５ Ａｌ−Ｃｕ層 ４ レジスト 1 Piezoelectric substrate 2 Pure Al layer 3,5 Al-Cu layer 4 resist
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０１Ｌ 21/28 Ｈ０１Ｌ 21/28 Ｆ ３０１ ３０１Ｚ 21/3065 Ｈ０３Ｈ 3/08 21/60 9/145 Ｚ Ｈ０３Ｈ 3/08 Ｈ０１Ｌ 21/302 Ｇ 9/145 21/92 ６２１Ｚ (56)参考文献 特開 昭60−64452（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C23F 4/00 C22F 1/04 C23C 10/28 C23C 14/06 C23C 14/14 H01L 21/28 H01L 21/28 301 H01L 21/3065 H03H 3/08 H03H 9/145 H01L 21/60 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI H01L 21/28 H01L 21/28 F 301 301Z 21/3065 H03H 3/08 21/60 9/145 Z H03H 3/08 H01L 21 / 302 G 9/145 21/92 621Z (56) Reference JP-A-60-64452 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) C23F 4/00 C22F 1/04 C23C 10/28 C23C 14/06 C23C 14/14 H01L 21/28 H01L 21/28 301 H01L 21/3065 H03H 3/08 H03H 9/145 H01L 21/60
Claims (7)
層を形成する工程と、 前記Ａｌ合金電極層上に、レジストにより電極をパタ−
ンニングして、前記Ａｌ合金電極層および純Ａｌ層をド
ライエッチングする工程と、 前記純Ａｌ層およびＡｌ合金電極をアニ−ルして、Ａｌ
合金電極の添加物を、前記純Ａｌ層に拡散させる工程
と、 よりなる高耐電力Ａｌ合金電極を有する電子部品の製造
方法。1. A step of forming a pure Al layer on a substrate, a step of forming an Al alloy electrode layer containing a trace amount of an additive on the pure Al layer, and a resist on the Al alloy electrode layer. Pattern the electrode with
And dry etching the Al alloy electrode layer and the pure Al layer, and annealing the pure Al layer and the Al alloy electrode to form an Al
A method of manufacturing an electronic component having a high-power-resistant Al alloy electrode, which comprises the step of diffusing an additive of an alloy electrode into the pure Al layer.
−ル条件として、温度が１００〜３００℃で、時間が５
〜３００分である高耐電力Ａｌ合金電極を有する電子部
品の製造方法。2. The manufacturing method according to claim 1, wherein the annealing condition is a temperature of 100 to 300 ° C. and a time of 5 minutes.
A method for manufacturing an electronic component having a high-power-resistant Al alloy electrode for 300 minutes.
物がＣｕ、Ｔｉ、Ｐｄ、Ｎｉ、Ｓｉ、Ｆｅ、Ｍｎ、Ｃ
ｒ、Ｚｎ又はＬｉである高耐電力Ａｌ合金電極を有する
電子部品の製造方法。3. The manufacturing method according to claim 1, wherein the additive is Cu, Ti, Pd, Ni, Si, Fe, Mn, or C.
A method of manufacturing an electronic component having a high-power-resistant Al alloy electrode which is r, Zn, or Li.
〜２０ｗｔ％である高耐電力Ａｌ合金電極を有する電子
部品の製造方法。4. The addition amount of the additive according to claim 3 is 0.1.
A method for manufacturing an electronic component having a high power resistant Al alloy electrode of 20 wt%.
ｌ層２の膜厚が、１００〜５０００オンク゛ストロ-ムの範囲に
ある高耐電力Ａｌ合金電極を有する電子部品の製造方
法。5. The production method according to claim 1, wherein pure A
A method of manufacturing an electronic component having a high-power-resistant Al alloy electrode in which the film thickness of the 1-layer 2 is in the range of 100 to 5000 angstroms.
合金電極層の膜厚が、１００〜５０００オンク゛ストロ-ムの範
囲にある高耐電力Ａｌ合金電極を有する電子部品の製造
方法。6. The manufacturing method according to claim 1, wherein Al
A method of manufacturing an electronic component having a high-power-resistant Al alloy electrode in which the film thickness of the alloy electrode layer is in the range of 100 to 5000 angstroms.
項２、請求項３、請求項４および請求項５記載の高耐電
力Ａｌ合金電極を有する電子部品の製造方法。7. The method according to claim 1, wherein the high power withstanding Al alloy electrode according to claim 2, claim 3, claim 4, or claim 5 is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07075994A JP3417042B2 (en) | 1994-04-08 | 1994-04-08 | Method for manufacturing electronic component having high power withstanding Al alloy electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07075994A JP3417042B2 (en) | 1994-04-08 | 1994-04-08 | Method for manufacturing electronic component having high power withstanding Al alloy electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07278852A JPH07278852A (en) | 1995-10-24 |
| JP3417042B2 true JP3417042B2 (en) | 2003-06-16 |
Family
ID=13440765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP07075994A Expired - Fee Related JP3417042B2 (en) | 1994-04-08 | 1994-04-08 | Method for manufacturing electronic component having high power withstanding Al alloy electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3417042B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6965190B2 (en) | 2001-09-12 | 2005-11-15 | Sanyo Electric Co., Ltd. | Surface acoustic wave device |
| JP2008244523A (en) * | 2007-03-23 | 2008-10-09 | Seiko Epson Corp | Surface acoustic wave element and electronic equipment |
| US20130057557A1 (en) * | 2011-09-07 | 2013-03-07 | Qualcomm Mems Technologies, Inc. | High area stacked layered metallic structures and related methods |
-
1994
- 1994-04-08 JP JP07075994A patent/JP3417042B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07278852A (en) | 1995-10-24 |
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