JP3409433B2 - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JP3409433B2 JP3409433B2 JP10948594A JP10948594A JP3409433B2 JP 3409433 B2 JP3409433 B2 JP 3409433B2 JP 10948594 A JP10948594 A JP 10948594A JP 10948594 A JP10948594 A JP 10948594A JP 3409433 B2 JP3409433 B2 JP 3409433B2
- Authority
- JP
- Japan
- Prior art keywords
- stem
- semiconductor laser
- stem base
- base
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Semiconductor Lasers (AREA)
Description
【０００１】[0001]
【産業上の利用分野】この発明は、光通信システムや光
計測機器等に用いられる、ステムベースとその上面のス
テムスリーブとを一体に樹脂モールドした半導体レーザ
装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a stem base and a top surface of the stem base used in optical communication systems and optical measuring instruments .
A semiconductor laser integrally molded with a system sleeve
It relates to the device .
【０００２】[0002]
【従来の技術】半導体レーザ装置のステムは、図４に示
すように、ステムベース１と、このステムベース１の上
面に設けられたステムブロック２とからなり、ステムブ
ロック２の垂直面に、半導体レーザダイオード４がヒー
トシンク５を介して固定され、ステムベース１の上面
に、半導体レーザダイオード４の出射光を検出するフォ
トダイオード６が固定されている。2. Description of the Related Art As shown in FIG. 4, a stem of a semiconductor laser device comprises a stem base 1 and a stem block 2 provided on the upper surface of the stem base 1, and a semiconductor is provided on a vertical surface of the stem block 2. A laser diode 4 is fixed via a heat sink 5, and a photodiode 6 for detecting emitted light of the semiconductor laser diode 4 is fixed on the upper surface of the stem base 1.
【０００３】ところで、上記ステムに、半導体レーザダ
イオード４とフォトダイオード６をダイボンドする時に
は、図５に示すように、位置決め治具７によってステム
の位置決めを行い、ステムが半導体レーザダイオード４
の光軸を中心に回転しないようにしている。By the way, when the semiconductor laser diode 4 and the photodiode 6 are die-bonded to the stem, the stem is positioned by a positioning jig 7 as shown in FIG.
It does not rotate around the optical axis of.
【０００４】したがって、ステムのステムベース１に
は、上記位置決め治具を係合する係合部８が設けられて
いる。Therefore, the stem base 1 of the stem is provided with an engaging portion 8 for engaging the positioning jig.
【０００５】[0005]
【発明が解決しようとする課題】従来、上記係合部８
は、ステムベース１の側面を切り込んだ溝によって形成
され、この溝はステムベース１の上下面を貫いて形成さ
れている。Conventionally, the above-mentioned engaging portion 8 is used.
Is formed by a groove formed by cutting a side surface of the stem base 1, and the groove is formed through the upper and lower surfaces of the stem base 1.
【０００６】ところが、上記のように、ステムベース１
の側面に、上下面を貫く溝を形成すると、半導体レーザ
装置を、駆動ＩＣ等の他の機能部品と一体に樹脂モール
ドした場合、次のような問題が生じる。However, as described above, the stem base 1
If a groove penetrating the upper and lower surfaces is formed on the side face of the semiconductor laser device, the following problems occur when the semiconductor laser device is integrally resin-molded with other functional components such as a drive IC.
【０００７】即ち、上記ステムベース１の上面には、図
６に示すように、半導体レーザダイオード４及びフォト
ダイオード６を封止する集光レンズ付きのガラスキャッ
プ９、さらにその外側に金属製のステムスリーブ１０が
設置されているが、上記のように、ステムベース１の側
面に上下面を貫く溝が形成されていると、樹脂モールド
した際に、上記ステムベース１の側面の溝を通じて、モ
ールド用の樹脂がステムベース１の上面のステムスリー
ブ１０内に侵入し、樹脂がガラスキャップ９等の光結合
系に付着して、光結合に支障をきたす場合がある。な
お、図６において符号１１は発光回路基板等の部品、１
２はモールド樹脂を示している。That is, as shown in FIG. 6, a glass cap 9 with a condenser lens for sealing the semiconductor laser diode 4 and the photodiode 6 is provided on the upper surface of the stem base 1, and a metal stem is provided outside the glass cap 9. Although the sleeve 10 is installed, if a groove penetrating the upper and lower surfaces is formed on the side surface of the stem base 1 as described above, the resin is molded through the groove on the side surface of the stem base 1 during resin molding. There is a case where the resin of (1) enters the stem sleeve 10 on the upper surface of the stem base 1 and the resin adheres to the optical coupling system such as the glass cap 9 and interferes with the optical coupling. In FIG. 6, reference numeral 11 is a component such as a light emitting circuit board, and 1
Reference numeral 2 denotes a mold resin.
【０００８】そこで、この発明は、樹脂モールドの際
に、樹脂がステムベースの上面側に侵入しない構造の半
導体レーザ装置を得ようとするものである。Therefore, the present invention has a semi-structure in which the resin does not enter the upper surface side of the stem base during resin molding.
It is intended to obtain a conductor laser device .
【０００９】[0009]
【課題を解決するための手段】この発明の係る半導体レ
ーザ装置は、上記の課題を解決するために、ダイボンド
時に位置決め治具が係合する係合部を、ステムベースの
上面を貫かないように、ステムベースの側面又は下面に
形成したものである。In order to solve the above-mentioned problems, the semiconductor laser device according to the present invention is designed so that the engaging portion with which the positioning jig is engaged at the time of die bonding does not penetrate the upper surface of the stem base. It is formed on the side surface or the lower surface of the stem base.
【００１０】[0010]
【作用】上記のように、係合部がステムベースの上面を
貫かずに形成されていると、樹脂モールドの際に、ステ
ムベースの上面側への樹脂の侵入を防止できる。As described above, when the engaging portion is formed without penetrating the upper surface of the stem base, the resin can be prevented from entering the upper surface side of the stem base during resin molding.
【００１１】[0011]
【実施例】図１に示す半導体レーザ装置のステムは、半
導体レーザダイオード２１が固定されるステムブロック
２２と、このステムブロック２２に固定された半導体レ
ーザダイオード２１の出射光を検出するフォトダイオー
ド２３が固定されるステムベース２４とからなり、上記
ステムブロック２２の垂直な固定面２５の下方には、ス
テムベース２４上に固定されるフォトダイオード２３の
一部分が入り込む凹段差２６が形成されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The stem of the semiconductor laser device shown in FIG. 1 includes a stem block 22 to which a semiconductor laser diode 21 is fixed, and a photodiode 23 for detecting emitted light of the semiconductor laser diode 21 fixed to this stem block 22. The stem base 24 is fixed, and below the vertical fixing surface 25 of the stem block 22, a concave step 26 into which a part of the photodiode 23 fixed on the stem base 24 is inserted is formed.
【００１２】上記凹段差の深さは、約０．２mm以上の深
さに形成され、半導体レーザダイオード２１を、ステム
ブロック２２の固定面２５にヒートシンクを用いること
なく直接固定できるようになっている。The depth of the concave step is formed to a depth of about 0.2 mm or more, and the semiconductor laser diode 21 can be directly fixed to the fixing surface 25 of the stem block 22 without using a heat sink. .
【００１３】ステムブロック２２の固定面２５の下方の
凹段差２６に、フォトダイオード２３の一部を入り込ま
せることにより、ステムブロック２２の固定面２５に、
半導体レーザダイオード２１を直接固定しても、半導体
レーザダイオード２１の出射光をフォトダイオード２３
の受光面のほぼ真ん中に位置させることが可能となる。By inserting a part of the photodiode 23 into the concave step 26 below the fixing surface 25 of the stem block 22, the fixing surface 25 of the stem block 22 is
Even if the semiconductor laser diode 21 is directly fixed, the light emitted from the semiconductor laser diode 21 is reflected by the photodiode 23.
It is possible to position it almost in the middle of the light-receiving surface of.
【００１４】また、ステムブロック２２の固定面の下方
に凹段差２６が形成されていると、フォトダイード２３
をステムベース２４上に実装する際に、フォトダイオー
ド２３を保持するコレットの先端がステムブロック２２
に当たらないので、高精度でフォトダイオード２３をス
テムベース２４上に実装できる。このため、ステム自体
の寸法精度が若干悪くても、全体としての実装精度を維
持することが可能となり、ステムベース２４と凹段差２
６を有するステムブロック２２とを、プレス成形よりも
成形精度が約５倍劣る成形法である金属射出成形法又は
ロストワックス法を用いる一体成形により安価に製造す
ることが可能となる。このため、上記ステムブロック２
２とステムベース２４の素材としては、金属射出成形加
工が可能で放熱性の良い鉄又はコバール材が使用されて
いる。Further, when the concave step 26 is formed below the fixing surface of the stem block 22, the photodiode 23 is formed.
When mounted on the stem base 24, the tip of the collet holding the photodiode 23 is mounted on the stem block 22.
Therefore, the photodiode 23 can be mounted on the stem base 24 with high accuracy. Therefore, even if the dimensional accuracy of the stem itself is slightly poor, the mounting accuracy as a whole can be maintained, and the stem base 24 and the concave step 2 can be maintained.
The stem block 22 having No. 6 can be manufactured inexpensively by integral molding using a metal injection molding method or a lost wax method, which is a molding method having a molding accuracy about 5 times inferior to that of press molding. Therefore, the stem block 2
As the material of 2 and the stem base 24, iron or Kovar material which is capable of metal injection molding and has good heat dissipation is used.
【００１５】上記ステムベース２４の側面には、ダイボ
ンド時に、位置決め治具と係合する係合部２７が形成さ
れ、この係合部２７は、ステムベース２４の側面の厚み
方向の約半分の位置から下面を貫く溝になっており、こ
の溝は、ステムベース２４の上面側に貫かれて形成され
ていない。On the side surface of the stem base 24, an engaging portion 27 that engages with a positioning jig at the time of die bonding is formed, and the engaging portion 27 is located at a position approximately half of the side surface of the stem base 24 in the thickness direction. From the bottom to the bottom surface, and this groove is not formed by penetrating to the top surface side of the stem base 24.
【００１６】また、図２に示す実施例のステムでは、上
記係合部２７が、長方形の穴としてステムベース２４の
側面に形成され、この穴の上下は、ステムベース２４の
上下面に達しないようになっている。In the stem of the embodiment shown in FIG. 2, the engaging portion 27 is formed as a rectangular hole on the side surface of the stem base 24, and the upper and lower sides of this hole do not reach the upper and lower surfaces of the stem base 24. It is like this.
【００１７】また、図３に示す実施例のステムでは、上
記係合部２７が、突起としてステムベース２４の下面に
形成されている。Further, in the stem of the embodiment shown in FIG. 3, the engaging portion 27 is formed as a protrusion on the lower surface of the stem base 24.
【００１８】このように、上記係合部２７は、溝、穴、
突起のいずれでもよい。As described above, the engaging portion 27 has grooves, holes,
Any of the protrusions may be used.
【００１９】[0019]
【発明の効果】以上のように、この発明に係る半導体レ
ーザ装置の構造によると、樹脂モールドの際に、樹脂が
ステムベースの上面側に侵入しないので、光結合系に樹
脂の付着がない、高性能な半導体レーザ装置が得られる
という効果がある。As described above , according to the structure of the semiconductor laser device of the present invention , the resin does not enter the upper surface side of the stem base during resin molding, so that the resin does not adhere to the optical coupling system. There is an effect that a high-performance semiconductor laser device can be obtained.
【図１】この発明の第１の実施例を示す斜視図FIG. 1 is a perspective view showing a first embodiment of the present invention.
【図２】この発明の第２の実施例を示す斜視図FIG. 2 is a perspective view showing a second embodiment of the present invention.
【図３】この発明の第３の実施例を示す下方から見た斜
視図FIG. 3 is a perspective view seen from below showing a third embodiment of the present invention.
【図４】従来例のステムの斜視図FIG. 4 is a perspective view of a conventional stem.
【図５】従来例のステムと位置決めの治具との係合状態
を示す斜視図FIG. 5 is a perspective view showing an engagement state between a stem and a positioning jig of a conventional example.
【図６】従来例のステムを使用した半導体レーザ装置を
樹脂モールドした状態を示す図FIG. 6 is a view showing a state in which a semiconductor laser device using a conventional stem is resin-molded.
２１ 半導体レーザダイオード ２２ ステムブロック ２３ フォトダイオード ２４ ステムベース ２５ 固定面 ２６ 凹段差 ２７ 係合部 21 Semiconductor laser diode 22 Stem block 23 Photodiode 24 stem base 25 Fixed surface 26 concave step 27 Engagement part
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01S 5/00 - 5/50 H01L 23/02 ＪＩＣＳＴファイル（ＪＯＩＳ)─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. 7 , DB name) H01S 5/00-5/50 H01L 23/02 JISST file (JOIS)
Claims (4)
ックに半導体レーザダイオードを固定し、ステムベース
の上面に半導体レーザダイオードの出射光を検出するフ
ォトダイオードを固定し、ステムベースに上記半導体レ
ーザダイオード及びフォトダイオードのダイボンド時に
位置決め治具が係合する係合部を設け、ステムベースの
上面の半導体レーザダイオード及びフォトダイオードの
外側にステムスリーブを設け、ステムスリーブとステム
ベースとを一体に樹脂モールドした半導体レーザ装置に
おいて、上記位置決め治具が係合する係合部を、ステム
ベースの上面を貫かないように、ステムベースの側面又
は下面に形成したことを特徴とする半導体レーザ装置。1. A stem block provided on an upper surface of a stem base.
The semiconductor laser diode is fixed to the
On the upper surface of the laser to detect the light emitted from the semiconductor laser diode.
Fix the photodiode and mount the semiconductor laser on the stem base.
Laser diode and photodiode die-bonding
Providing an engaging part for the positioning jig to engage,
Of the upper surface semiconductor laser diode and photodiode
The stem sleeve is installed on the outside, and the stem sleeve and the stem
For semiconductor laser devices that are resin-molded integrally with the base
In the semiconductor laser device , an engaging portion with which the positioning jig engages is formed on a side surface or a lower surface of the stem base so as not to penetrate an upper surface of the stem base.
み方向の約半分の位置から下面を貫く溝になっている請
求項１記載の半導体レーザ装置。2. The semiconductor laser device according to claim 1, wherein the engagement portion is a groove that penetrates the lower surface from a position approximately half of the side surface of the stem base in the thickness direction.
成された穴である請求項１記載の半導体レーザ装置。3. The semiconductor laser device according to claim 1, wherein the engaging portion is a hole formed on a side surface of the stem base.
成された突起である請求項１記載の半導体レーザ装置。4. The semiconductor laser device according to claim 1, wherein the engaging portion is a protrusion formed on a lower surface of the stem base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10948594A JP3409433B2 (en) | 1994-05-24 | 1994-05-24 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10948594A JP3409433B2 (en) | 1994-05-24 | 1994-05-24 | Semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07321410A JPH07321410A (en) | 1995-12-08 |
| JP3409433B2 true JP3409433B2 (en) | 2003-05-26 |
Family
ID=14511445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10948594A Expired - Fee Related JP3409433B2 (en) | 1994-05-24 | 1994-05-24 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3409433B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001338935A (en) | 2000-05-26 | 2001-12-07 | Nidec Copal Corp | Die bonding apparatus |
| JP2007042757A (en) * | 2005-08-01 | 2007-02-15 | Sony Corp | Optical device, its manufacturing method and optical communication equipment |
| JP6507942B2 (en) * | 2014-08-29 | 2019-05-08 | 日亜化学工業株式会社 | Holding member for semiconductor light emitting device, light source device and manufacturing method thereof |
-
1994
- 1994-05-24 JP JP10948594A patent/JP3409433B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07321410A (en) | 1995-12-08 |
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