JP3405662B2 - Pattern drawing method and pattern drawing apparatus - Google Patents
Pattern drawing method and pattern drawing apparatusInfo
- Publication number
- JP3405662B2 JP3405662B2 JP20636197A JP20636197A JP3405662B2 JP 3405662 B2 JP3405662 B2 JP 3405662B2 JP 20636197 A JP20636197 A JP 20636197A JP 20636197 A JP20636197 A JP 20636197A JP 3405662 B2 JP3405662 B2 JP 3405662B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- pattern
- potential
- conductive member
- pattern drawing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 101
- 239000002245 particle Substances 0.000 claims description 32
- 230000002093 peripheral effect Effects 0.000 claims description 26
- 230000007246 mechanism Effects 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 description 22
- 230000005684 electric field Effects 0.000 description 11
- 239000011810 insulating material Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000012811 non-conductive material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000000615 nonconductor Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electron Beam Exposure (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、荷電粒子ビームを
用いてパターンを描画するパターン描画方法及びパター
ン描画装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pattern drawing method and a pattern drawing apparatus for drawing a pattern using a charged particle beam.
【０００２】[0002]
【従来の技術】近年、ＬＳＩの高集積化・大容量化に伴
い、半導体素子に要求される回路線幅は益々狭くなって
きている。このような半導体素子は、通常、所望の回路
パターンが形成された数１０種類の原画パターン（レチ
クルあるいはマスク）を順次、ウエハ上の露光領域に高
精度に位置合せしながら転写することによって製造され
る。この転写には通常、高精度な光学系を有する縮小投
影露光装置が用いられる。この縮小投影露光装置では、
転写される側のウエハ全面に露光できるようにするため
に、ウエハを固定する高精度なＸＹステージを備えてい
る。そして、ＸＹステージを制御し、光学系に対してウ
エハをステップ＆リピートしながら転写を行う。このた
め、この装置はステッパとも呼ばれている。2. Description of the Related Art In recent years, circuit line widths required for semiconductor devices have become narrower with higher integration and larger capacity of LSIs. Such a semiconductor element is usually manufactured by sequentially transferring several tens of kinds of original image patterns (reticle or mask) on which a desired circuit pattern is formed onto an exposure area on a wafer while aligning them with high accuracy. It A reduction projection exposure apparatus having a highly accurate optical system is usually used for this transfer. In this reduction projection exposure apparatus,
A high-precision XY stage for fixing the wafer is provided so that the entire surface of the wafer to be transferred can be exposed. Then, the XY stage is controlled to transfer the wafer while stepping and repeating the wafer with respect to the optical system. For this reason, this device is also called a stepper.
【０００３】原画パターンとしては、高精度に仕上げら
れたガラス基板上にＣｒでパターンを描いたものが用い
られる。すなわち、通常、片面にＣｒを蒸着したガラス
基板上にレジストを均一に塗布したものを用意し、これ
の所望位置に電子ビーム等の収束された荷電粒子ビーム
を設計パターンデータにしたがって照射する。この照射
によって変質したレジストの特性を利用し、場所によっ
てＣｒエッチングを抑止させて所望のＣｒパターンを得
るようにしている。このように、絞られたビームスポッ
トを繋いで一つのパターンを形成しているため、ビーム
をコントロールすることによってパターンを高精度に形
成することが可能となっている。As the original image pattern, a pattern drawn with Cr on a glass substrate finished with high precision is used. That is, normally, a glass substrate having Cr vapor-deposited on one surface and uniformly coated with a resist is prepared, and a desired charged particle beam such as an electron beam is irradiated according to the design pattern data. By utilizing the characteristics of the resist which has been altered by this irradiation, Cr etching is suppressed depending on the location to obtain a desired Cr pattern. As described above, since the focused beam spots are connected to form one pattern, it is possible to form the pattern with high accuracy by controlling the beam.
【０００４】このようなステッパでは、これまで光の波
長限界から１μｍ以下のパターンは解像できないといわ
れたきた。しかし、最近では、光学系・照明系の改良や
レチクル上で光の位相を調整する位相シフトマスク等の
出現により、サブミクロンのパターンを解像できるに至
っている。It has been said so far that such a stepper cannot resolve a pattern of 1 μm or less due to the wavelength limit of light. However, recently, with the improvement of the optical system / illumination system and the advent of a phase shift mask for adjusting the phase of light on a reticle, a submicron pattern can be resolved.
【０００５】一方、パターンの微細化が進むにつれ、荷
電粒子ビームの高解像性を利用し、原画パターンを用い
ずに荷電粒子ビームで直接ウエハ上に回路パターンを描
画する、いわゆる直接描画法も用いられてきている。On the other hand, as the pattern becomes finer, there is also a so-called direct writing method in which the high resolution of the charged particle beam is utilized to draw a circuit pattern directly on the wafer with the charged particle beam without using the original image pattern. Has been used.
【０００６】ところで、最近では、半導体素子の一層の
大容量化が望まれている。そのためには、たとえば製造
工程でステッパを用いる場合には、原画パターンを含め
たステッパの解像度をさらに向上させる必要がある。し
かし、ステッパの解像度を向上させるには限界があるた
め、一層の大容量化を図るためには、素子面積を拡大す
ることが必要となる。そのためは、原画パターンを作成
するとき、ガラス基板上の可能な限り広い面積にパター
ンを描画する必要がある。つまり、ガラス基板の面積利
用率を向上させる必要がある。一方、直接描画法で製造
する場合おいても、一層の大容量化を図るためには、ウ
エハの周辺まで、なるべく広い面積にパターンを描画す
るように、ウエハの面積利用率を向上させる必要があ
る。By the way, recently, further increase in capacity of semiconductor elements has been desired. For that purpose, for example, when a stepper is used in the manufacturing process, it is necessary to further improve the resolution of the stepper including the original image pattern. However, since there is a limit to improving the resolution of the stepper, it is necessary to increase the element area in order to further increase the capacity. Therefore, when creating the original image pattern, it is necessary to draw the pattern on the glass substrate in the largest possible area. That is, it is necessary to improve the area utilization rate of the glass substrate. On the other hand, even in the case of manufacturing by the direct writing method, in order to further increase the capacity, it is necessary to improve the area utilization rate of the wafer so that the pattern is drawn in as wide an area as possible up to the periphery of the wafer. is there.
【０００７】しかしながら、荷電粒子ビームを用いてパ
ターンを描画する場合には、ビーム照射位置近傍の電場
が不均一で、ビームを偏向させるような勾配を有する
と、ビームの軌道が変化し、パターン位置精度が劣化す
るという問題がある。このため、たとえばガラス基板を
用いて原画パターンを製作する場合を例にとると、通
常、ガラス基板の端面にまでＣｒ膜の蒸着がなされてい
ないので、ガラス基板の端面近傍で描画が行われると、
２次電子によるチャージアップが端面で生じ、パターン
位置精度が劣化するという問題があった。However, when a pattern is drawn using a charged particle beam, if the electric field near the beam irradiation position is non-uniform and there is a gradient that deflects the beam, the trajectory of the beam changes and the pattern position is changed. There is a problem that the accuracy deteriorates. Therefore, for example, when an original pattern is manufactured using a glass substrate as an example, since the Cr film is not vapor-deposited even on the end surface of the glass substrate, drawing is performed near the end surface of the glass substrate. ,
There is a problem in that charge-up due to secondary electrons occurs on the end face, and the pattern position accuracy is deteriorated.
【０００８】なお、この問題を回避するために、導電性
カバーで基板端部を覆う方法が提案されている（特開平
５−３４７２４２号公報）。しかし、このように構成し
ても、Ｃｒ膜上のレジストが非導電体であるため、荷電
粒子ビームの照射によってレジスト表面に電位が生じ、
この電位とカバーとの間の電位差が形成する電場が、結
果的に基板端面近傍のビームシフトを生じさせ、パター
ン位置精度を劣化させてしまうという問題があった。In order to avoid this problem, a method of covering the end of the substrate with a conductive cover has been proposed (Japanese Patent Laid-Open No. 5-347242). However, even with this configuration, since the resist on the Cr film is a non-conductor, a potential is generated on the resist surface by irradiation of the charged particle beam,
The electric field formed by the potential difference between this potential and the cover eventually causes a beam shift in the vicinity of the end face of the substrate, which deteriorates the pattern position accuracy.
【０００９】[0009]
【発明が解決しようとする課題】上述の如く、荷電粒子
ビームを用いてパターンを描画する従来のパターン描画
手法にあっては、特に、基板の周縁部まで描画しようと
すると、電場の影響でビームシフトが起こり、パターン
位置精度が劣化するという問題があった。As described above, in the conventional pattern drawing method for drawing a pattern using a charged particle beam, especially when trying to draw up to the peripheral edge of the substrate, the beam is affected by the electric field. There is a problem that the shift occurs and the pattern position accuracy deteriorates.
【００１０】そこで本発明は、上述した電場の影響を受
けずにパターン描画を行うことができ、半導体素子のな
お一層の大容量化の実現に寄与できるパターン描画方法
及びパターン描画装置を提供することを目的としてい
る。Therefore, the present invention provides a pattern drawing method and a pattern drawing apparatus capable of performing pattern drawing without being affected by the above-mentioned electric field and contributing to the realization of an even larger capacity of a semiconductor element. It is an object.
【００１１】[0011]
【課題を解決するための手段】上記目的を達成するため
に、請求項１に係る発明では、基板上に荷電粒子ビーム
を照射して前記基板上に所望のパターンを描画するに当
たり、前記基板の周辺部に該基板とは絶縁状態に導電性
部材を配置し、前記基板の表面電位の電位勾配方向を前
記荷電粒子ビームの進行方向と平行にさせ得るレベルに
前記導電性部材の電位を設定するようにしたことを特徴
としている。In order to achieve the above object, in the invention according to claim 1, in irradiating a charged particle beam onto a substrate to draw a desired pattern on the substrate, A conductive member is arranged in the peripheral portion in an insulating state from the substrate, and the potential of the conductive member is set to a level at which the potential gradient direction of the surface potential of the substrate can be made parallel to the traveling direction of the charged particle beam. It is characterized by doing so.
【００１２】また、上記目的を達成するために、請求項
３に係る発明では、基板上に荷電粒子ビームを照射して
前記基板上に所望のパターンを描画するパターン描画装
置において、前記基板の周辺部に該基板とは絶縁状態に
配置された導電性部材と、前記基板の表面電位の電位勾
配方向を前記荷電粒子ビームの進行方向と平行にさせ得
るレベルに前記導電性部材の電位を設定する電位設定手
段とを備えていることを特徴としている。In order to achieve the above object, in the invention according to claim 3, in a pattern drawing apparatus for irradiating a charged particle beam onto a substrate to draw a desired pattern on the substrate, the periphery of the substrate is provided. A conductive member disposed in a state of being insulated from the substrate, and the potential of the conductive member is set to a level at which the potential gradient direction of the surface potential of the substrate can be made parallel to the traveling direction of the charged particle beam. And a potential setting means.
【００１３】なお、請求項３に係る発明において、前記
導電性部材は、前記基板を支持する支持機構の一部を兼
用していてもよいし、複数に分割され、かつ少なくとも
一部が種々のサイズの基板に対応すべく移動自在に設け
られていてもよい。In the invention according to claim 3, the conductive member may also serve as a part of a supporting mechanism for supporting the substrate, or the conductive member may be divided into a plurality of parts and at least a part thereof may be various. It may be movably provided to accommodate a size substrate.
【００１４】また、請求項３に係る発明において、 前
記導電性部材が複数に分割され、かつ少なくとも一部が
種々のサイズの基板に対応すべく移動自在に設けられて
おり、前記電位設定手段が前記導電性部材の各分割部に
対応した数だけ設けられていてもよい。Further, in the invention according to claim 3, the conductive member is divided into a plurality of parts, and at least a part of the conductive member is movably provided so as to accommodate substrates of various sizes, and the potential setting means is provided. The conductive member may be provided in the number corresponding to each divided portion.
【００１５】また、請求項３に係る発明において、前記
導電性部材は、一部が前記基板の周縁部に重なるように
配置されていてもよい。本発明に係るパターン描画方法
及びパターン描画装置では、電位設定手段で上述した条
件を満たすように導電性部材の電位を設定している。し
たがって、非導電性レジストの塗布された基板上に荷電
粒子ビームを照射してパターンを描画する際に、種々の
原因により基板表面に生じた、ビームの進行方向と平行
でない勾配を持つ不均一な電場に起因するビームシフト
の発生を防止することが可能となる。Further, in the invention according to claim 3, the conductive member may be arranged so that a part thereof overlaps with a peripheral portion of the substrate. In the pattern drawing method and the pattern drawing apparatus according to the present invention, the electric potential of the conductive member is set by the electric potential setting means so as to satisfy the above condition. Therefore, when a charged particle beam is irradiated onto a substrate coated with a non-conductive resist to draw a pattern, a non-uniform gradient generated on the substrate surface due to various causes is not parallel to the traveling direction of the beam. It becomes possible to prevent the occurrence of beam shift due to the electric field.
【００１６】[0016]
【発明の実施の形態】以下、図面を参照しながら発明の
実施形態を説明する。図１には本発明の第１の実施形態
に係るパターン描画装置における要部の局部的な断面図
が示されている。すなわち、この図では、パターン描画
装置にセットされた基板の周辺部だけが示されている。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a local sectional view of a main part of a pattern drawing apparatus according to a first embodiment of the present invention. That is, in this figure, only the peripheral portion of the substrate set in the pattern drawing apparatus is shown.
【００１７】同図において、１は図中上面にＣｒが蒸着
され、さらにその上に非導電体であるレジストの塗布さ
れたガラス基板を示している。このガラス基板１は、カ
セット２に保持されてパターン描画装置の荷電粒子ビー
ム照射室に配置されている。In the figure, reference numeral 1 denotes a glass substrate on which Cr is vapor-deposited on the upper surface of the figure and a resist which is a non-conductive material is further applied thereon. The glass substrate 1 is held by a cassette 2 and placed in a charged particle beam irradiation chamber of a pattern drawing device.
【００１８】カセット２は、基板１の周辺位置を基板１
の側面に沿って上方に向けて延びるように配置された導
電材製の第１の支持部材１０と、この第１の支持部材１
０の上端部に固定された絶縁材製の第２の支持部材１１
と、この第２の支持部材１１から延びて一部が基板１の
上面周縁部と重なるように設けられた導電材製の第３の
支持部材１２と、この第３の支持部材１２の下面で基板
１の上面周縁部と重なる部分に取り付けられた絶縁材製
の第４の支持部材１３と、この第４の支持部材１３と基
板１上のＣｒ蒸着層との間に介装されて常時接地される
導電材製の第５の支持部材１４と、基板１の図中下方に
配置されて基板１を押し上げて第５の支持部材１４とで
挟持する保持ピン１５とを備えている。In the cassette 2, the peripheral position of the substrate 1 is set to the substrate 1.
A first supporting member 10 made of a conductive material, which is arranged so as to extend upward along the side surface of the first supporting member 1 and the first supporting member 1.
A second support member 11 made of an insulating material and fixed to the upper end portion of 0.
And a third support member 12 made of a conductive material, which is provided so as to extend from the second support member 11 so as to partially overlap the upper surface peripheral portion of the substrate 1, and a lower surface of the third support member 12. A fourth supporting member 13 made of an insulating material, which is attached to a portion overlapping with the peripheral portion of the upper surface of the substrate 1, and is interposed between the fourth supporting member 13 and the Cr vapor deposition layer on the substrate 1 and is always grounded. A fifth support member 14 made of a conductive material and a holding pin 15 that is disposed below the substrate 1 in the figure and pushes up the substrate 1 to sandwich it with the fifth support member 14.
【００１９】そして、カセット２における第３の支持部
材１２、つまり一部が基板１の上面周縁部と重なるよう
に設けられた導電材製の第３の支持部材１２は、電位設
定手段としての電圧印加装置１６の出力端に接続されて
いる。この電圧印加装置１６は、パターン描画時に、基
板１の表面電位（レジスト表面電位）の電位勾配方向を
荷電粒子ビームの進行方向と平行にさせ得るレベルの電
圧を第３の支持部材１２に印加するように構成されてい
る。The third support member 12 in the cassette 2, that is, the third support member 12 made of a conductive material and provided so as to partially overlap the peripheral portion of the upper surface of the substrate 1 serves as a voltage setting means. It is connected to the output terminal of the applying device 16. The voltage application device 16 applies a voltage to the third support member 12 at a level that makes the potential gradient direction of the surface potential (resist surface potential) of the substrate 1 parallel to the traveling direction of the charged particle beam during pattern writing. Is configured.
【００２０】このような構成であると、パターン描画時
に、基板１の周辺部で起こり易いビームシフトの発生を
最小限に抑えることできる。すなわち、荷電粒子ビーム
が照射されると、レジスト表面に電位が生じる。With such a structure, it is possible to minimize the occurrence of beam shift which tends to occur in the peripheral portion of the substrate 1 at the time of pattern drawing. That is, when the charged particle beam is irradiated, a potential is generated on the resist surface.
【００２１】この電位Ｖは、たとえば、文献（M.A.Stur
ans et al.,SPIE Vol.1604,pp36-44,1991.）により、
Ｖ＝ηｉｔδ／２εε0 …(1)
と表すことができる。ここで、η：チャージアップへの
寄与率，ｉ：ビームの電流密度，ｔ：ビーム照射時間，
δ：レジスト厚さ，ε0 ：真空の誘電率，ε：レジスト
の比誘電率である。This potential V can be obtained, for example, from the reference (MAStur
ans et al., SPIE Vol.1604, pp36-44, 1991.) can be expressed as V = ηitδ / 2εε 0 (1). Here, η: contribution rate to charge-up, i: beam current density, t: beam irradiation time,
δ: resist thickness, ε 0 : vacuum permittivity, ε: resist relative permittivity.
【００２２】電位Ｖを用いて、レジスト表面と第３の支
持部材１２が形成する電場により生じる第３の支持部材
１２の近傍を通過する電子の軌道変化は、シミュレーシ
ョンにより求めることができる。Using the potential V, a change in the trajectory of electrons passing near the third support member 12 caused by the electric field formed by the resist surface and the third support member 12 can be obtained by simulation.
【００２３】図２には第３の支持部材１３に与える電圧
をパラメータとしたビームずれ量の計算結果の一例が示
されている。零でない適当な電位Ｖ4 を第３の支持部材
１２に与えることにより、ずれ量が最小になることが分
かる。FIG. 2 shows an example of the calculation result of the beam shift amount using the voltage applied to the third support member 13 as a parameter. It can be seen that the deviation amount is minimized by applying an appropriate non-zero potential V 4 to the third supporting member 12.
【００２４】また、この例では、第３の支持部材１２を
基板１の端面を覆うような位置に配置しているので、２
次電子が端面に到達することがなく、したがって端部ガ
ラス面でのチャージアップも防ぐことが可能となる。Further, in this example, the third supporting member 12 is arranged at a position so as to cover the end face of the substrate 1, so that
Secondary electrons do not reach the end face, and therefore charge-up on the end glass surface can be prevented.
【００２５】図３には本発明の第２の実施形態に係るパ
ターン描画装置における要部の局部的な断面図が示され
ている。すなわち、この図においても、パターン描画装
置にセットされた基板の周辺部だけが示されている。し
たがって、図１と同一機能部分は同一符号で示してあ
る。FIG. 3 shows a local sectional view of a main part of a pattern drawing apparatus according to the second embodiment of the present invention. That is, also in this figure, only the peripheral portion of the substrate set in the pattern drawing apparatus is shown. Therefore, the same functional portions as those in FIG. 1 are designated by the same reference numerals.
【００２６】同図において、１は図中上面にＣｒが蒸着
され、さらにその上に非導電体であるレジストの塗布さ
れたガラス基板を示している。このガラス基板１は、カ
セット２に保持されてパターン描画装置の荷電粒子ビー
ム照射室に配置されている。In the figure, reference numeral 1 denotes a glass substrate on which Cr is vapor-deposited on the upper surface of the figure and a resist which is a non-conductive material is further applied thereon. The glass substrate 1 is held by a cassette 2 and placed in a charged particle beam irradiation chamber of a pattern drawing device.
【００２７】カセット２には、図中実線矢印１７で示す
方向に移動自在な移動機構１８が配置されている。この
移動機構１８には、絶縁部材１９を介して導電性部材２
０が取り付けられている。The cassette 2 is provided with a moving mechanism 18 which is movable in a direction indicated by a solid arrow 17 in the drawing. The moving member 18 is connected to the conductive member 2 via an insulating member 19.
0 is attached.
【００２８】導電性部材２０は、基板１の側面に沿って
図中上方に延びた後に折曲して一部が基板１の図中上面
周縁部と重なる位置まで延びている。そして、導電性部
材２０は、電位設定手段としての電圧印加装置１６の出
力端に接続されている。ここで、電圧印加装置１６は、
パターン描画時に、基板１の表面電位（レジスト表面電
位）の電位勾配方向を荷電粒子ビームの進行方向と平行
にさせ得るレベルの電圧を導電性部材２０に印加するよ
うに構成されている。The conductive member 20 extends upward along the side surface of the substrate 1 in the drawing and is then bent to a position where a part of the conductive member 20 overlaps the peripheral portion of the upper surface of the substrate 1 in the drawing. The conductive member 20 is connected to the output end of the voltage applying device 16 as the potential setting means. Here, the voltage applying device 16 is
At the time of pattern drawing, a voltage of a level capable of making the potential gradient direction of the surface potential of the substrate 1 (resist surface potential) parallel to the traveling direction of the charged particle beam is applied to the conductive member 20.
【００２９】このような構成であると、先の例と同様
に、パターン描画時に、基板１の周辺部で起こり易いビ
ームシフトの発生を最小限に抑えることできるととも
に、異なるサイズの基板がカセット２に装着された場合
においても移動機構１８により導電性部材２０を常に基
板の端面近傍に配置することができるので、２次電子が
端面に到達するのを防止でき、端部ガラス面でのチャー
ジアップも防ぐことが可能となる。With such a structure, similarly to the previous example, it is possible to minimize the occurrence of beam shift which tends to occur in the peripheral portion of the substrate 1 at the time of pattern writing, and substrates of different sizes are used in the cassette 2. The conductive member 20 can be always arranged near the end face of the substrate by the moving mechanism 18 even when it is mounted on the substrate, so that secondary electrons can be prevented from reaching the end face, and the charge up on the end glass surface can be prevented. Can be prevented.
【００３０】図４には本発明の第３の実施形態に係るパ
ターン描画装置における要部の局部的な断面図が示され
ている。すなわち、この図においても、パターン描画装
置にセットされた基板の周辺部だけが示されている。し
たがって、図１と同一機能部分は同一符号で示してあ
る。FIG. 4 shows a local cross-sectional view of the main part of the pattern drawing apparatus according to the third embodiment of the present invention. That is, also in this figure, only the peripheral portion of the substrate set in the pattern drawing apparatus is shown. Therefore, the same functional portions as those in FIG. 1 are designated by the same reference numerals.
【００３１】同図において、１は図中上面にＣｒが蒸着
され、さらにその上に非導電体であるレジストの塗布さ
れたガラス基板を示している。このガラス基板１は、カ
セット２に保持されてパターン描画装置の荷電粒子ビー
ム照射室に配置されている。In the figure, reference numeral 1 denotes a glass substrate on which Cr is vapor-deposited on the upper surface of the figure and a resist which is a non-conductive material is further applied thereon. The glass substrate 1 is held by a cassette 2 and placed in a charged particle beam irradiation chamber of a pattern drawing device.
【００３２】カセット２には、絶縁材２１を介してアー
スナイフ２２が取り付けられている。このアースナイフ
２２はパターン描画に当たって、Ｃｒ膜に到達した電子
を逃がすためのもので、Ｃｒ膜に電気的に接続されてい
る。この例においては、アースナイフ２２の上面に絶縁
材２３を介してを導電性部材２４が取り付けられてい
る。A ground knife 22 is attached to the cassette 2 via an insulating material 21. The ground knife 22 is for releasing electrons that have reached the Cr film in pattern drawing, and is electrically connected to the Cr film. In this example, a conductive member 24 is attached to the upper surface of the ground knife 22 via an insulating material 23.
【００３３】導電性部材２４は、一部が基板１の図中上
面周縁部及びアースナイフ２２と重なる位置まで延びて
いる。そして、導電性部材２４は、電位設定手段として
の電圧印加装置１６の出力端に接続されている。ここ
で、電圧印加装置１６は、パターン描画時に、基板１の
表面電位（レジスト表面電位）の電位勾配方向を荷電粒
子ビームの進行方向と平行にさせ得るレベルの電圧を導
電性部材２４に印加するように構成されている。The conductive member 24 extends to a position where a part thereof overlaps with the peripheral edge of the upper surface of the substrate 1 in the figure and the ground knife 22. The conductive member 24 is connected to the output end of the voltage applying device 16 as the potential setting means. Here, the voltage application device 16 applies to the conductive member 24 a voltage of a level that makes the potential gradient direction of the surface potential (resist surface potential) of the substrate 1 parallel to the traveling direction of the charged particle beam during pattern writing. Is configured.
【００３４】なお、アースナイフ２２は、このナイフの
電位をアース電位を含む任意の電位に設定可能な電圧印
加装置２５に接続されている。このような構成である
と、先の例と同様に、パターン描画時に、基板１の周辺
部で起こり易いビームシフトの発生を最小限に抑えるこ
とできる。この例では、特にアースナイフ２２を覆うよ
うに導電性部材２４を設けているので、ごく狭い領域に
設けられるアースナイフ２２の存在によって基板１の端
面近傍の電場がアースナイフ近傍で急激に変化するのを
防止することができる。また、アースナイフ２２を介し
てＣｒ膜の電位を任意に設定できるので、設定電位を０
にするとＣｒ膜を接地したことと同等になり、また適当
な電位に設定することによりビームずれ量が最小になる
ような電場をより精密に形成することが可能となる。The ground knife 22 is connected to a voltage application device 25 capable of setting the potential of the knife to any potential including the ground potential. With such a configuration, similarly to the previous example, it is possible to minimize the occurrence of a beam shift that tends to occur in the peripheral portion of the substrate 1 at the time of pattern drawing. In this example, since the conductive member 24 is provided so as to cover the ground knife 22, the electric field near the end face of the substrate 1 changes rapidly near the ground knife due to the existence of the ground knife 22 provided in a very narrow area. Can be prevented. In addition, since the potential of the Cr film can be arbitrarily set via the earth knife 22, the set potential is 0
When this is set, it is equivalent to grounding the Cr film, and by setting an appropriate potential, it is possible to more accurately form an electric field that minimizes the beam shift amount.
【００３５】図５（ａ）には本発明の第４の実施形態に
係るパターン描画装置における要部の平面図が示されて
おり、図５（ｂ）には同要部の側面図が示されている。
すなわち、この図においても、パターン描画装置にセッ
トされた基板の周辺部だけが示されている。したがっ
て、図３と同一機能部分は同一符号で示してある。FIG. 5 (a) is a plan view of a main part of the pattern drawing apparatus according to the fourth embodiment of the present invention, and FIG. 5 (b) is a side view of the main part. Has been done.
That is, also in this figure, only the peripheral portion of the substrate set in the pattern drawing apparatus is shown. Therefore, the same functional portions as those in FIG. 3 are designated by the same reference numerals.
【００３６】同図において、１は上面にＣｒが蒸着さ
れ、さらにその上に非導電体であるレジストの塗布され
たガラス基板を示している。このガラス基板１は、カセ
ット２に保持されてパターン描画装置の荷電粒子ビーム
照射室に配置されている。In the figure, reference numeral 1 indicates a glass substrate on which Cr is vapor-deposited on the upper surface and which is coated with a resist which is a non-conductor. The glass substrate 1 is held by a cassette 2 and placed in a charged particle beam irradiation chamber of a pattern drawing device.
【００３７】カセット２には、移動機構１８及び絶縁部
材１９を介して４つの導電性部材２６が、図５（ａ）中
に実線矢印２７で示す方向、すなわち基板１の上面周縁
部と任意の重なり量で重なることができるように移動自
在に配置されている。そして、これら導電性部材２６
は、それぞれ独立に電位設定手段としての電圧印加装置
１６の出力端に接続されている。ここで、各電圧印加装
置１６は、パターン描画時に、基板１の表面電位（レジ
スト表面電位）の電位勾配方向を荷電粒子ビームの進行
方向と平行にさせ得るレベルの電圧を対応する各導電性
部材２４に印加するように構成されている。In the cassette 2, four conductive members 26 are arranged via the moving mechanism 18 and the insulating member 19 in a direction indicated by a solid arrow 27 in FIG. It is movably arranged so that it can be overlapped by the amount of overlap. Then, these conductive members 26
Are independently connected to the output terminal of the voltage applying device 16 as potential setting means. Here, each of the voltage applying devices 16 corresponds to each conductive member corresponding to a voltage of a level capable of making the potential gradient direction of the surface potential (resist surface potential) of the substrate 1 parallel to the traveling direction of the charged particle beam during pattern writing. It is configured to apply to 24.
【００３８】このような構成であると、先の例と同様
に、パターン描画時に、基板１の周辺部で起こり易いビ
ームシフトの発生を最小限に抑えることできるととも
に、異なるサイズの基板がカセット２に装着された場合
においても移動機構１８により導電性部材２６を常に基
板の端面近傍に配置することができるので、２次電子が
端面に到達するのを防止でき、端部ガラス面でのチャー
ジアップも防ぐことが可能となる。With such a configuration, similarly to the previous example, it is possible to minimize the occurrence of beam shift which tends to occur in the peripheral portion of the substrate 1 at the time of pattern drawing, and substrates of different sizes can be used in the cassette 2. Even if the conductive member 26 is mounted on the end surface of the substrate, the conductive member 26 can be always disposed near the end surface of the substrate by the moving mechanism 18, so that secondary electrons can be prevented from reaching the end surface and charge-up on the end glass surface. Can be prevented.
【００３９】なお、導電性部材１６を支持する何れかの
支持系で導電性部材の下方位置に図４に示したアースナ
イフを取り付けてもよい。図６には本発明の第５の実施
形態に係るパターン描画装置における要部の平面図が示
されている。すなわち、この図においても、パターン描
画装置にセットされた基板の周辺部だけが示されてい
る。したがって、図５（ａ）と同一機能部分は同一符号
で示してある。The earth knife shown in FIG. 4 may be attached to the lower position of the conductive member by any supporting system for supporting the conductive member 16. FIG. 6 is a plan view of the main part of the pattern drawing apparatus according to the fifth embodiment of the present invention. That is, also in this figure, only the peripheral portion of the substrate set in the pattern drawing apparatus is shown. Therefore, the same functional portions as those in FIG. 5A are designated by the same reference numerals.
【００４０】同図において、１は上面にＣｒが蒸着さ
れ、さらにその上に非導電体であるレジストの塗布され
たガラス基板を示している。このガラス基板１は、図示
しないカセットに保持されてパターン描画装置の荷電粒
子ビーム照射室に配置されている。In the figure, reference numeral 1 indicates a glass substrate on which Cr is vapor-deposited on the upper surface and on which a resist which is a non-conductor is applied. The glass substrate 1 is held in a cassette (not shown) and placed in the charged particle beam irradiation chamber of the pattern drawing device.
【００４１】カセットには、図示しない絶縁支持機構を
介して直線状に配列固定された５つの導電性部材２８
と、図示しない移動機構及び絶縁部材を介して図中実線
矢印２７で示す方向に移動自在に設けられて基板１の上
面周縁部と任意の重なり量で重なることができる５つの
導電性部材２６とが配置されている。そして、これら導
電性部材２６、２８は、それぞれ独立に電位設定手段と
しての電圧印加装置１６の出力端に接続されている。こ
こで、各電圧印加装置１６は、パターン描画時に、基板
１の表面電位（レジスト表面電位）の電位勾配方向を荷
電粒子ビームの進行方向と平行にさせ得るレベルの電圧
を対応する導電性部材に印加するように構成されてい
る。In the cassette, five conductive members 28 are arranged and fixed in a straight line via an insulating support mechanism (not shown).
And five conductive members 26 that are movably provided in the direction indicated by solid line arrow 27 in the drawing through a moving mechanism and an insulating member (not shown) and that can overlap the peripheral portion of the upper surface of the substrate 1 by an arbitrary amount. Are arranged. The conductive members 26 and 28 are independently connected to the output terminals of the voltage applying device 16 as potential setting means. Here, each voltage application device 16 applies a voltage of a level capable of making the potential gradient direction of the surface potential (resist surface potential) of the substrate 1 parallel to the traveling direction of the charged particle beam to the corresponding conductive member during pattern writing. It is configured to apply.
【００４２】なお、この例では、１０個の導電性部材の
うちの３個が基板１を支持する支持部材を兼用してお
り、支持部２９ａ，２９ｂ、２９ｃを備えている。ま
た、１０個の導電性部材のうちの１個には、下面に図４
と同様に構成されてＣｒ膜に到達した電子を逃がすため
のアースナイフ２２が取り付けてあり、このアースナイ
フ２２は該ナイフの電位をアース電位を含む任意の電位
に設定可能な電圧印加装置２５に接続されている。In this example, three of the ten conductive members also serve as support members for supporting the substrate 1, and are provided with support portions 29a, 29b, 29c. Also, one of the 10 conductive members has a lower surface shown in FIG.
A ground knife 22 for releasing electrons having reached the Cr film is attached in the same manner as the above. The ground knife 22 is a voltage applying device 25 capable of setting the potential of the knife to any potential including the ground potential. It is connected.
【００４３】このような構成であると、先の例と同様
に、パターン描画時に、基板１の周辺部で起こり易いビ
ームシフトの発生を最小限に抑えることできるととも
に、異なるサイズの基板がカセットに装着された場合に
おいても移動可能な５個の導電性部材２６を移動させる
ことによって、各導電性部材２６，２８を常に基板１の
端面近傍に配置することができるので、２次電子が端面
に到達するのを防止でき、端部ガラス面でのチャージア
ップも防ぐことが可能となる。With such a configuration, as in the previous example, it is possible to minimize the occurrence of beam shift that tends to occur in the peripheral portion of the substrate 1 at the time of pattern drawing, and substrates of different sizes can be stored in the cassette. By moving the five conductive members 26 that are movable even when they are mounted, the conductive members 26 and 28 can be always arranged in the vicinity of the end surface of the substrate 1, so that the secondary electrons can end up on the end surface. It is possible to prevent it from reaching, and it is possible to prevent charge-up on the edge glass surface.
【００４４】また、この例では、アースナイフ２２を覆
うように導電性部材２８を設けているので、ごく狭い領
域に設けられるアースナイフ２２の存在によって基板１
の端面近傍の電場がアースナイフ近傍で急激に変化する
のを防止することができる。また、アースナイフ２２を
介してＣｒ膜の電位を任意に設定できるので、設定電位
を０にするとＣｒ膜を接地したことと同等になり、また
適当な電位に設定することによりビームずれ量が最小に
なるような電場をより精密に形成することが可能とな
る。Further, in this example, since the conductive member 28 is provided so as to cover the ground knife 22, the substrate 1 is provided due to the existence of the ground knife 22 provided in a very narrow area.
It is possible to prevent the electric field near the end face of the abrupt change near the earth knife. Further, since the potential of the Cr film can be arbitrarily set via the earth knife 22, setting the set potential to 0 is equivalent to grounding the Cr film, and setting the proper potential minimizes the beam shift amount. It is possible to more precisely form an electric field such that
【００４５】図７には本発明の第６の実施形態に係るパ
ターン描画装置における要部の平面図が示されている。
すなわち、この図においても、パターン描画装置にセッ
トされた基板の周辺部だけが示されている。したがっ
て、図６と同一機能部分は同一符号で示してある。FIG. 7 is a plan view of the main part of the pattern drawing apparatus according to the sixth embodiment of the present invention.
That is, also in this figure, only the peripheral portion of the substrate set in the pattern drawing apparatus is shown. Therefore, the same functional portions as those in FIG. 6 are designated by the same reference numerals.
【００４６】この例では、支持部２９ａの設けられてい
る導電性部材２６の両隣に位置している導電性部材を絶
縁材３０を介して連結し、移動機構を共用させたものと
なっている。In this example, the conductive members located on both sides of the conductive member 26 provided with the supporting portion 29a are connected via the insulating material 30 and the moving mechanism is shared. .
【００４７】このように構成しても、図６の例と同様の
効果を得ることができる。図８には本発明の第７の実施
形態に係るパターン描画装置における要部の平面図が示
されている。すなわち、この図においても、パターン描
画装置にセットされた基板の周辺部だけが示されてい
る。したがって、図７と同一機能部分は同一符号で示し
てある。Even with this configuration, the same effect as the example of FIG. 6 can be obtained. FIG. 8 is a plan view of the main part of the pattern drawing apparatus according to the seventh embodiment of the present invention. That is, also in this figure, only the peripheral portion of the substrate set in the pattern drawing apparatus is shown. Therefore, the same functional portions as those in FIG. 7 are designated by the same reference numerals.
【００４８】先の例では一部に移動機構を組み込み、こ
の移動機構を動作させることによって基板１のサイズ変
化に対応できるようにしているが、この例では基板１の
サイズが変わる毎に、その基板サイズに適合した大きさ
の導電性部材２９に交換するようにしている。In the above example, a moving mechanism is incorporated in a part, and by operating this moving mechanism, it is possible to cope with the size change of the substrate 1, but in this example, each time the size of the substrate 1 changes The conductive member 29 having a size suitable for the substrate size is replaced.
【００４９】このように構成しても、先の各例と同様の
効果を得ることができる。なお、上述した各例は、上面
にＣｒが蒸着され、さらにその上に非導電体であるレジ
ストの塗布されたガラス基板に荷電粒子ビームを照射し
てＣｒパターンを形成する場合の例であるが、本発明は
ウエハ（基板）上に非導電体であるレジストを塗布し、
これに荷電粒子ビームを照射する直接照射法にも適用で
きる。Even with such a configuration, the same effects as those of the above-described examples can be obtained. In addition, each of the above-described examples is an example in which Cr is vapor-deposited on the upper surface, and a glass substrate coated with a resist that is a non-conductive material is irradiated with a charged particle beam to form a Cr pattern. In the present invention, a non-conductive resist is applied on a wafer (substrate),
It can also be applied to a direct irradiation method in which this is irradiated with a charged particle beam.
【００５０】[0050]
【発明の効果】以上のように、本発明によれば、非導電
性レジストの塗布された基板上に荷電粒子ビームを照射
してパターンを描画する場合に、種々の原因により基板
表面に生じた電位分布に対し、基板周辺部に配置された
導電性部材の電位を設定することにより、ビームシフト
の生じない電場を形成することができる。As described above, according to the present invention, when a charged particle beam is irradiated on a substrate coated with a non-conductive resist to draw a pattern, the pattern is generated on the substrate surface due to various causes. By setting the electric potential of the conductive member arranged in the peripheral portion of the substrate with respect to the electric potential distribution, it is possible to form an electric field in which no beam shift occurs.
【図１】本発明の第１の実施形態に係るパターン描画装
置における要部の局部的な断面図FIG. 1 is a partial cross-sectional view of a main part of a pattern drawing apparatus according to a first embodiment of the present invention.
【図２】導電性部材に印加する電圧をパラメータとして
基板の外べりからの距離と偏向量との関係を求めた計算
結果を示す図FIG. 2 is a diagram showing a calculation result in which the relationship between the distance from the outside of the substrate and the deflection amount is obtained using the voltage applied to the conductive member as a parameter.
【図３】本発明の第２の実施形態に係るパターン描画装
置における要部の局部的な断面図FIG. 3 is a partial cross-sectional view of a main part of a pattern drawing apparatus according to a second embodiment of the present invention.
【図４】本発明の第３の実施形態に係るパターン描画装
置における要部の局部的な断面図FIG. 4 is a partial cross-sectional view of a main part of a pattern drawing apparatus according to a third embodiment of the present invention.
【図５】（ａ）は本発明の第４の実施形態に係るパター
ン描画装置における要部の平面図で、（ｂ）は同要部の
側面図FIG. 5A is a plan view of a main part of a pattern drawing apparatus according to a fourth embodiment of the present invention, and FIG. 5B is a side view of the main part.
【図６】本発明の第５の実施形態に係るパターン描画装
置における要部の平面図FIG. 6 is a plan view of a main part of a pattern drawing apparatus according to a fifth embodiment of the present invention.
【図７】本発明の第６の実施形態に係るパターン描画装
置における要部の平面図FIG. 7 is a plan view of a main part of a pattern drawing apparatus according to a sixth embodiment of the present invention.
【図８】本発明の第７の実施形態に係るパターン描画装
置における要部の平面図FIG. 8 is a plan view of a main part of a pattern drawing apparatus according to a seventh embodiment of the present invention.
１…基板 ２…カセット １１，１３，１９，２１，２３，３０…絶縁部材 １２…導電性部材としての第３の支持部材 １６…電位設定手段としての電圧印加装置 １８…移動機構 ２５…電圧印加装置 ２６，２８…導電性部材 ２９ａ、２９ｂ、２９ｃ…支持部 1 ... Substrate 2 ... cassette 11, 13, 19, 21, 23, 30 ... Insulating member 12 ... Third support member as conductive member 16 ... Voltage applying device as potential setting means 18 ... Moving mechanism 25 ... Voltage applying device 26, 28 ... Conductive member 29a, 29b, 29c ... Supporting part
フロントページの続き (56)参考文献 特開 平５−347242（ＪＰ，Ａ) 特開 昭61−49420（ＪＰ，Ａ) 特開 昭61−135121（ＪＰ，Ａ) 特開 平９−92610（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01J 37/147 H01J 37/20 H01L 21/027 Continuation of front page (56) Reference JP-A-5-347242 (JP, A) JP-A-61-49420 (JP, A) JP-A-61-135121 (JP, A) JP-A-9-92610 (JP , A) (58) Fields surveyed (Int.Cl. 7 , DB name) H01J 37/147 H01J 37/20 H01L 21/027
Claims (8)
板上に所望のパターンを描画するに当たり、前記基板の
周辺部に該基板とは絶縁状態に導電性部材を配置し、前
記基板の表面電位の電位勾配方向を前記荷電粒子ビーム
の進行方向と平行にさせ得るレベルに前記導電性部材の
電位を設定するようにしたことを特徴とするパターン描
画方法。1. When irradiating a charged particle beam on a substrate to draw a desired pattern on the substrate, a conductive member is arranged in a peripheral portion of the substrate in an insulating state from the substrate, A pattern drawing method, wherein the potential of the conductive member is set to a level at which the potential gradient direction of the surface potential can be made parallel to the traveling direction of the charged particle beam.
導電性レジストの塗布された基板を用いることを特徴と
する請求項１に記載のパターン描画方法。2. The pattern drawing method according to claim 1, wherein a substrate coated with a non-conductive resist is used on a surface which receives the irradiation of the charged particle beam.
板上に所望のパターンを描画するパターン描画装置にお
いて、前記基板の周辺部に該基板とは絶縁状態に配置さ
れた導電性部材と、前記基板の表面電位の電位勾配方向
を前記荷電粒子ビームの進行方向と平行にさせ得るレベ
ルに前記導電性部材の電位を設定する電位設定手段とを
具備してなることを特徴とするパターン描画装置。3. A pattern drawing apparatus for irradiating a charged particle beam on a substrate to draw a desired pattern on the substrate, and a conductive member disposed in a peripheral portion of the substrate in an insulating state from the substrate. And a potential setting means for setting the potential of the conductive member to a level capable of making the potential gradient direction of the surface potential of the substrate parallel to the traveling direction of the charged particle beam. apparatus.
る面に非導電性レジストが塗布されていることを特徴と
する請求項３に記載のパターン描画装置。4. The pattern drawing apparatus according to claim 3, wherein a non-conductive resist is applied to a surface of the substrate which is irradiated with the charged particle beam.
持機構の一部を兼用していることを特徴とする請求項３
に記載のパターン描画装置。5. The conductive member also serves as a part of a support mechanism for supporting the substrate.
The pattern drawing apparatus described in 1.
少なくとも一部が種々のサイズの基板に対応すべく移動
自在に設けられていることを特徴とする請求項３に記載
のパターン描画装置。6. The pattern drawing according to claim 3, wherein the conductive member is divided into a plurality of parts, and at least a part of the conductive member is movably provided so as to accommodate substrates of various sizes. apparatus.
なくとも一部が種々のサイズの基板に対応すべく移動自
在に設けられており、前記電位設定手段は前記導電性部
材の各分割部に対応した数だけ設けられていることを特
徴とする請求項３に記載のパターン描画装置。7. The conductive member is divided into a plurality of parts, at least a part of which is provided movably so as to accommodate substrates of various sizes, and the potential setting means is each divided part of the conductive member. The pattern drawing apparatus according to claim 3, wherein the pattern drawing apparatus is provided in a number corresponding to.
部に重なるように配置されることを特徴とする請求項
３，５，６，７項の何れか１項に記載のパターン描画装
置。8. The pattern according to claim 3, wherein the conductive member is arranged so that a part thereof overlaps a peripheral portion of the substrate. Drawing device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20636197A JP3405662B2 (en) | 1997-07-31 | 1997-07-31 | Pattern drawing method and pattern drawing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20636197A JP3405662B2 (en) | 1997-07-31 | 1997-07-31 | Pattern drawing method and pattern drawing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1154077A JPH1154077A (en) | 1999-02-26 |
| JP3405662B2 true JP3405662B2 (en) | 2003-05-12 |
Family
ID=16522058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20636197A Expired - Fee Related JP3405662B2 (en) | 1997-07-31 | 1997-07-31 | Pattern drawing method and pattern drawing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3405662B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4802025B2 (en) * | 2006-03-29 | 2011-10-26 | 株式会社ニューフレアテクノロジー | Substrate grounding mechanism and charged particle beam drawing apparatus |
| JP2008058809A (en) * | 2006-09-01 | 2008-03-13 | Nuflare Technology Inc | Substrate cover, and charged particle beam drawing device and method |
| JP6219747B2 (en) * | 2014-02-25 | 2017-10-25 | 日本電子株式会社 | Charged particle beam drawing system |
| KR20220078646A (en) * | 2020-04-27 | 2022-06-10 | 가부시키가이샤 뉴플레어 테크놀로지 | Charged particle beam writing method and charged particle beam writing apparatus |
-
1997
- 1997-07-31 JP JP20636197A patent/JP3405662B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1154077A (en) | 1999-02-26 |
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