JP3399772B2 - Cleaning equipment for semiconductor manufacturing equipment - Google Patents
Cleaning equipment for semiconductor manufacturing equipmentInfo
- Publication number
- JP3399772B2 JP3399772B2 JP04621597A JP4621597A JP3399772B2 JP 3399772 B2 JP3399772 B2 JP 3399772B2 JP 04621597 A JP04621597 A JP 04621597A JP 4621597 A JP4621597 A JP 4621597A JP 3399772 B2 JP3399772 B2 JP 3399772B2
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- cleaning liquid
- supply pipe
- liquid supply
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体製造装置の
洗浄装置に関し、特に精密洗浄を行う技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning device for semiconductor manufacturing equipment, and more particularly to a technique for performing precision cleaning.
【０００２】[0002]
【従来の技術】例えば、ＬＳＩ（大規模集積回路）で
は、高速・大容量化に伴ってトランジスタなどの素子数
が増大し、それに伴って配線の微細化と多層化が図られ
ている。多層化する場合、図９（Ａ）に示すように、半
導体層１上に配線層２を形成し、その上に層間絶縁膜３
を形成し、この工程が順次繰り返される。このとき、配
線層２により層間絶縁膜３に凹凸ができてしまうため、
層間絶縁膜３を研磨して図９（Ｂ）に示すように平坦化
する必要がある。2. Description of the Related Art For example, in an LSI (Large Scale Integrated Circuit), the number of elements such as transistors has increased with the increase in speed and capacity, and along with this, miniaturization of wiring and multilayering have been attempted. In the case of multilayering, as shown in FIG. 9A, the wiring layer 2 is formed on the semiconductor layer 1 and the interlayer insulating film 3 is formed thereon.
Are formed, and this process is sequentially repeated. At this time, since the wiring layer 2 causes unevenness in the interlayer insulating film 3,
It is necessary to polish the interlayer insulating film 3 to flatten it as shown in FIG.
【０００３】従来は、機械的研磨による装置が使用され
ていた。ところで、ＬＳＩの大規模集積化が進むにつれ
てパターンも微細化し、高精度に平坦化しなければ半導
体層１、配線層２のパターンを形成するときに用いられ
るステッパの焦点を合わせることができず、微細化を図
れないため、高精度に平坦化する技術が必要となってき
た。Conventionally, a mechanical polishing apparatus has been used. By the way, with the progress of large-scale integration of LSI, the pattern is also miniaturized, and the stepper used when forming the pattern of the semiconductor layer 1 and the wiring layer 2 cannot be focused unless the planarization is performed with high accuracy, and the pattern is fine. Since this cannot be achieved, a technique for flattening with high precision has been required.
【０００４】今年、かかる研磨装置として、ＣＭＰ（ケ
ミカル・メカニカル・ポリッシング：化学的機械研磨）
装置が注目されつつある。図１０は、かかるＣＭＰ装置
の概略を示す。このＣＭＰ装置では、図１０に示すよう
に、層間絶縁膜３が形成された面を下にして半導体ウェ
ハ４を研磨ヘッド５に吸着し、半導体ウェハ４をプラテ
ン（研磨定盤）６に押し当てて、研磨ヘッド５及びプラ
テン６を回転し、スラリ８を研磨パッド７に滴下する。This year, as such a polishing apparatus, CMP (Chemical Mechanical Polishing) is used.
Devices are gaining attention. FIG. 10 shows an outline of such a CMP apparatus. In this CMP apparatus, as shown in FIG. 10, a surface on which the interlayer insulating film 3 is formed in the lower adsorbed semiconductor web <br/> Ha 4 to the polishing head 5, a platen (polishing platen semiconductor wafer 4 ) 6, the polishing head 5 and the platen 6 are rotated, and the slurry 8 is dropped on the polishing pad 7.
【０００５】このプラテン６には発砲ポリウレタン製の
研磨パッド７を貼付されており、このスラリ８は化学研
磨液であり、しかもシリカ（SiO2）の微粉末が主成分と
して含まれている。このスラリ８により半導体ウェハ４
の外表面が研磨される。研磨後、半導体ウェハ４の外表
面は洗浄装置によって洗浄される。図１１及び図１２
は、従来の半導体製造装置の洗浄装置の概略を示す。A polishing pad 7 made of foamed polyurethane is attached to the platen 6, and the slurry 8 is a chemical polishing liquid and contains fine powder of silica (SiO 2 ) as a main component. This slurry 8 allows the semiconductor wafer 4
The outer surface of the is polished. After polishing, the outer surface of the semiconductor wafer 4 is cleaned by a cleaning device. 11 and 12
Shows an outline of a conventional cleaning apparatus for a semiconductor manufacturing apparatus.
【０００６】従来の洗浄装置では、半導体ウェハ４を回
転させながら半導体ウェハ４の外表面にブラシ９を接触
させ、ブラシ９を回転させながら洗浄液を滴下し、半導
体ウェハ４の外表面を洗浄するようにしている。[0006] In the conventional cleaning apparatus, while rotating the semiconductor wafer 4 is brought into contact with the brush 9 on the outer surface of the semiconductor wafer 4, was added dropwise a cleaning liquid while rotating the brush 9, semiconductors
The outer surface of the body wafer 4 is cleaned.
【０００７】[0007]
【発明が解決しようとする課題】ところで、研磨の高精
度化に伴って洗浄も、より精密に行う必要がある。従来
の半導体製造装置の洗浄装置では、図１１及び図１２に
示すようにブラシ９を接触させて洗浄するため、半導体
ウェハ４の外表面にブラシ９の付着物が付着してしま
う。By the way, it is necessary to carry out cleaning more precisely as the precision of polishing is improved. In the conventional cleaning apparatus for the semiconductor manufacturing apparatus, as shown in FIGS. 11 and 12, the brush 9 is brought into contact with the cleaning apparatus, so that the foreign matter on the brush 9 adheres to the outer surface of the semiconductor wafer 4. .
【０００８】また、ブラシ９の耐久性、管理等にも問題
があり、精密洗浄を行うのが難しかった。本発明はこの
ような従来の課題に鑑みてなされたもので、より精密な
洗浄が可能な半導体製造装置の洗浄装置を提供すること
を目的とする。Further, there are problems in the durability and management of the brush 9, and it is difficult to perform precision cleaning. The present invention has been made in view of such conventional problems, and an object of the present invention is to provide a cleaning apparatus for a semiconductor manufacturing apparatus, which enables more precise cleaning.
【０００９】[0009]
【課題を解決するための手段】このため、本発明による
半導体製造装置の洗浄装置は、半導体ウェハの外表面を
洗浄する半導体製造装置の洗浄装置において、径の異な
る洗浄液供給管を複数備え、径の大きい洗浄液供給管の
中に径の小さい洗浄液供給管を順次挿入し、各洗浄液供
給管の外周にノズルを取り付けて、各ノズル先端を最も
径の大きい洗浄液供給管の外面まで延ばし、各洗浄液供
給管に異なる圧力で洗浄液を供給し、前記半導体ウェハ
の外表面に洗浄液を吹きつけて非接触で該半導体ウェハ
の外表面を洗浄する洗浄手段を備えて構成されている。Therefore, the cleaning apparatus for a semiconductor manufacturing apparatus according to the present invention has a different diameter in the cleaning apparatus for a semiconductor manufacturing apparatus for cleaning the outer surface of a semiconductor wafer.
Equipped with multiple cleaning liquid supply pipes
Insert the cleaning solution supply pipes with a small diameter into the
Attach the nozzles to the outer circumference of the supply pipe, and
Extend it to the outer surface of the cleaning solution supply pipe with a large diameter to supply each cleaning solution.
The cleaning liquid is supplied to the supply pipe at different pressures,
The semiconductor wafer blown contactless cleaning liquid to the outer surface of the
And a cleaning means for cleaning the outer surface of the.
【００１０】かかる構成によれば、径の大きい洗浄液供
給管の中に径の小さい洗浄液供給管を順次挿入し、各洗
浄液供給管の外周にノズルを取り付け、各ノズルの先端
を最も径の大きい洗浄液供給管の外面まで延ばして構成
された洗浄手段の各洗浄液供給管に夫々異なる圧力で洗
浄液を供給し、半導体ウェハの外表面に異なる噴射力の
洗浄液を吹きつけて、非接触で半導体ウェハの外表面の
洗浄をする。 According to this structure, a cleaning liquid supply having a large diameter is provided.
Insert the cleaning liquid supply pipe with a small diameter into the supply pipe in order and
Attach nozzles to the outer circumference of the clean liquid supply pipe, and tip of each nozzle
Is extended to the outer surface of the cleaning liquid supply pipe with the largest diameter.
Each cleaning liquid supply pipe of the cleaning means is washed with different pressure.
It supplies a cleansing liquid with different jetting force to the outer surface of the semiconductor wafer.
A cleaning solution is sprayed on the outer surface of the semiconductor wafer without contact.
Wash.
【００１１】また、前記ノズルは、前記各洗浄液供給管
の外周に夫々複数取り付けられて、該各洗浄液供給管に
供給された洗浄液を半導体ウェハの外表面に向けて噴射
するように構成されたものである。これにより、各洗浄
液供給管の外周に夫々取り付けられた複数のノズルで、
各洗浄液供給管に供給された洗浄液を半導体ウェハの外
表面に向けて噴射する。 The nozzles are the cleaning liquid supply pipes.
Are attached to the outer circumference of each of the cleaning liquid supply pipes.
Sprays the supplied cleaning liquid toward the outer surface of the semiconductor wafer
It is configured to do. This allows each wash
With multiple nozzles attached to the outer circumference of the liquid supply pipe,
Clean the cleaning liquid supplied to each cleaning liquid supply pipe to the outside of the semiconductor wafer.
Jet toward the surface.
【００１２】さらに、前記複数の洗浄液供給管は、回転
するように構成されたものである。これにより、複数の
洗浄液供給管を回転し、各洗浄液供給管に供給された洗
浄液を半導体ウェハの外表面に向けて噴射することがで
きる。 Further, the plurality of cleaning liquid supply pipes are rotated.
It is configured to do. This allows multiple
Rotate the cleaning liquid supply pipes and wash the cleaning liquid supplied to each cleaning liquid supply pipe.
It is possible to spray the cleaning liquid toward the outer surface of the semiconductor wafer.
Wear.
【００１３】そして、前記複数のノズルは、各ノズルの
径が各洗浄液供給管で異なるように構成されたものであ
る。これにより各洗浄液供給管で径が異なるようされた
複数のノズルで、洗浄液を半導体ウェハ面に向けて噴射
する。 Further , the plurality of nozzles are
The cleaning liquid supply pipe has a different diameter.
It As a result, the diameter of each cleaning liquid supply pipe was made different.
Spraying the cleaning liquid toward the semiconductor wafer surface with multiple nozzles
To do.
【００１４】[0014]
【００１５】[0015]
【発明の実施の形態】以下、本発明の実施の形態を図１
〜図８に基づいて説明する。尚、図９及び図１０と同一
要素のものについては同一符号を付して説明は省略す
る。本発明の半導体製造装置の洗浄装置は、例えばＣＭ
Ｐ処理後の洗浄に適用される。但し、これに限るもので
はなく、半導体製造装置の洗浄装置であれば、どのよう
なものにも適用することができる。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to FIG.
~ It demonstrates based on FIG. The same elements as those in FIGS. 9 and 10 are designated by the same reference numerals and the description thereof will be omitted. The semiconductor manufacturing apparatus cleaning apparatus of the present invention is, for example, a CM.
Applied to washing after P treatment. However, the present invention is not limited to this, and can be applied to any cleaning device for semiconductor manufacturing equipment.
【００１６】本実施の形態を示す図１において、洗浄手
段としての洗浄液供給管１１は、２重パイプ式スプリン
クラ型ノズル（スクランプルウォッシャノズル）の形状
を有しており、非接触で半導体ウェハの外表面を洗浄す
るようになっている。即ち、洗浄液供給管１１は、径が
太い太管１２と径の細い細管１３とを備えて構成され、
太管１２の中に細管１３が挿入され、この太管１２、細
管１３の外周には、夫々、複数のノズルが取り付けられ
ている。洗浄液供給管１１は周方向に回転するようにな
っている。尚、細管１３の軸を太管１２の軸に一致させ
てもよいし、偏心させてもよい。In FIG. 1 showing the present embodiment, a cleaning liquid supply pipe 11 as a cleaning means has a shape of a double pipe type sprinkler type nozzle (scrambler washer nozzle), and a semiconductor wafer of a contactless type It is designed to clean the outer surface. That is, the cleaning liquid supply pipe 11 includes a thick pipe 12 having a large diameter and a thin pipe 13 having a small diameter,
Is thin tube 13 is inserted into the thick tube 12, the thick tube 12, the outer circumference of the capillary 13, respectively, a plurality of nozzles are mounted. The cleaning liquid supply pipe 11 is adapted to rotate in the circumferential direction. The axis of the thin tube 13 may be aligned with the axis of the thick tube 12, or may be eccentric.
【００１７】Ａ−Ａ' 断面図である図２に示すように、
細管１３に取り付けられたノズル１５−１〜１５−ｎの
先端は、太管１２の外面まで延び、太管１２に取り付け
られたノズル１４−１〜１４−ｎの先端と共に、太管１
２の外面近傍で開口している。また、図１のＢ−Ｂ’断
面図である図３に示すように、ノズル１４−１〜１４−
ｎ、１５−１〜１５−ｎの先端は、太管１２の外面近傍
でＬ字型に屈曲している。但し、ノズル先端を滑らかに
湾曲させるようにしてもよい。As shown in FIG. 2, which is a sectional view taken along the line AA ',
The tips of the nozzles 15-1 to 15-n attached to the thin tube 13 extend to the outer surface of the thick tube 12, and together with the tips of the nozzles 14-1 to 14-n attached to the thick tube 12, the thick tube 1
2 is open near the outer surface. Further, as shown in FIG. 3 which is a sectional view taken along the line BB ′ of FIG. 1, the nozzles 14-1 to 14-
The tips of n and 15-1 to 15-n are bent in an L shape near the outer surface of the thick tube 12. However, the nozzle tip may be curved smoothly.
【００１８】ノズル１４−１〜１４−ｎのノズル径は、
ノズル１５−１〜１５−ｎの径よりも太くなっている。
そして、太管１２、細管１３には、夫々、高圧、低圧の
洗浄液が供給され、この洗浄液には超音波が印加され
る。この洗浄液供給管１１は、図５に示すように、半導
体ウェハ４の上下に配置される。The nozzle diameters of the nozzles 14-1 to 14-n are
It is thicker than the diameter of the nozzles 15-1 to 15-n.
Then, the high-pressure cleaning liquid and the low-pressure cleaning liquid are supplied to the thick pipe 12 and the thin pipe 13, respectively, and ultrasonic waves are applied to the cleaning liquid. As shown in FIG. 5, the cleaning liquid supply pipe 11 is a semiconductor
It is arranged above and below the body wafer 4.
【００１９】次にＣＭＰ研磨後の洗浄動作について説明
する。半導体ウェハ４は図４の矢印で示すように回転
し、洗浄液供給管１１も矢印で示すように回転し、半導
体ウェハ４の外表面には上下から洗浄液が吹きつけられ
る。洗浄液供給管１１は回転し、洗浄液供給管１１の回
転に伴ってノズル１４−１〜１４−ｎ、１５−１〜１５
−ｎの各ノズルの噴射角度及び洗浄液の噴射力が変わ
る。Next, the cleaning operation after CMP polishing will be described. The semiconductor wafer 4 is rotated as indicated by the arrows in FIG. 4, the cleaning liquid supply pipe 11 is also rotated as shown by an arrow, semiconductors
The cleaning liquid is sprayed onto the outer surface of the body wafer 4 from above and below. The cleaning liquid supply pipe 11 rotates, and as the cleaning liquid supply pipe 11 rotates, the nozzles 14-1 to 14-n, 15-1 to 15
The ejection angle of each nozzle of -n and the ejection force of the cleaning liquid change.
【００２０】太管１２には、低圧で洗浄液が供給され、
ノズル１４−１〜１４−ｎのノズル径が太いので、ノズ
ル１４−１〜１４−ｎから噴射した洗浄液は、半導体ウ
ェハ４の外表面に弱い圧力で吹きつけられる。また、細
管１３には洗浄液が高圧で供給され、ノズル１５−１〜
１５−ｎのノズル径も細いので、ノズル１５−１〜１５
−ｎから噴射した洗浄液は、強い圧力で半導体ウェハ４
の外表面に吹きつけられる。The cleaning liquid is supplied to the thick pipe 12 at a low pressure,
Since the nozzles 14-1 to 14-n have large diameters, the cleaning liquid sprayed from the nozzles 14-1 to 14-n is sprayed onto the outer surface of the semiconductor wafer 4 with a weak pressure. Further, the cleaning liquid is supplied to the thin tube 13 at a high pressure, and the nozzles 15-1 to 15-1
Since the nozzle diameter of 15-n is also small, the nozzles 15-1 to 15-15
The cleaning liquid sprayed from -n is applied to the semiconductor wafer 4 with a strong pressure.
Sprayed on the outer surface of.
【００２１】このように洗浄液の圧力等が可変されて洗
浄液が半導体ウェハ４の外表面に吹きつけられる。かか
る構成によれば、半導体ウェハ４は非接触で洗浄され、
従来のブラシ洗浄によるコンタミ、ブラシの耐久性、管
理等の問題を解消することができ、精密洗浄を行うこと
ができる。In this way, the pressure of the cleaning liquid is varied and the cleaning liquid is sprayed onto the outer surface of the semiconductor wafer 4. According to this configuration, the semiconductor wafer 4 is cleaned without contact,
It is possible to solve problems such as contamination, durability of the brush, and management caused by conventional brush cleaning, and it is possible to perform precision cleaning.
【００２２】また、洗浄液供給管１１の回転に伴って半
導体ウェハ４の外表面に噴射される洗浄液の圧力及び角
度が可変し、しかも洗浄液には超音波が印加されるの
で、きれいに洗浄することができる。尚、本実施の形態
では、太管１２、細管１３には、夫々、高圧、低圧の洗
浄液を供給するようにしたが、その逆にすることもでき
る。Further, the half with the rotation of the cleaning liquid supply pipe 11
Since the pressure and the angle of the cleaning liquid sprayed on the outer surface of the conductor wafer 4 are variable and ultrasonic waves are applied to the cleaning liquid, cleaning can be performed cleanly. In the present embodiment, the high-pressure cleaning liquid and the low-pressure cleaning liquid are supplied to the thick pipe 12 and the thin pipe 13, respectively, but the reverse order is also possible.
【００２３】また、洗浄液供給管１１を２重構造ではな
く、１つの管で構成してもよいし、あるいは３重構造以
上にしてもよい。また、図６に示すように、洗浄液供給
管１１を三叉、あるいはそれ以上に分岐させて構成する
こともできる。このようにすれば洗浄力も強化される。
また、図７に示すように、２つの洗浄液供給管１１、１
１’を、夫々、支点Ｐ，Ｐ’を中心にして回転するよう
にしてもよい。このようにすれば、半導体ウェハ４の中
心部にも洗浄液が強く噴射され、半導体ウェハ４の外表
面を均一に洗浄することができる。Further, the cleaning liquid supply pipe 11 may be constructed of a single pipe instead of the double structure, or may be of a triple structure or more. Further, as shown in FIG. 6, the cleaning liquid supply pipe 11 may be formed by branching into three or more branches. In this way, the cleaning power is also enhanced.
Further, as shown in FIG. 7, the two cleaning liquid supply pipes 11, 1
1'may be rotated around the fulcrums P and P ', respectively. Thus, cleaning liquid is strongly injected to the central portion of the semiconductor wafer 4, external surface of a semiconductor wafer 4
The surface can be cleaned uniformly.
【００２４】さらに、洗浄液供給管ではなく、図８に示
すように、シャワー装置１６を備え、洗浄液を斜め上か
ら半導体ウェハ４の外表面に噴射するようにしてもよ
い。Further, instead of the cleaning liquid supply pipe, a shower device 16 may be provided as shown in FIG. 8 to spray the cleaning liquid onto the outer surface of the semiconductor wafer 4 from obliquely above.
【００２５】[0025]
【発明の効果】以上説明したように、請求項１に係る半
導体製造装置の洗浄装置によれば、径の大きい洗浄液供
給管の中に径の小さい洗浄液供給管を順次挿入し、各洗
浄液供給管の外周にノズルを取り付け、各ノズルの先端
を最も径の大きい洗浄液供給管の外面まで延ばして構成
された洗浄手段の各洗浄液供給管に夫々異なる圧力で洗
浄液を供給し、半導体ウェハの外表面に異なる噴射力の
洗浄液を吹きつけて、非接触で半導体ウェハの外表面の
洗浄をすることができる。したがって、各洗浄液供給管
に繋がる各ノズルの洗浄液の噴射力を任意に可変でき、
非接触で精密洗浄をすることができる。また、非接触で
精密洗浄をするので、半導体ウェハの外表面に付着物が
付着しないようにすることができる。 As described in the foregoing, according to the cleaning apparatus of the semi <br/> conductor manufacturing apparatus according to claim 1, large cleaning liquid subjected diameter
Insert the cleaning liquid supply pipe with a small diameter into the supply pipe in order and
Attach nozzles to the outer circumference of the clean liquid supply pipe, and tip of each nozzle
Is extended to the outer surface of the cleaning liquid supply pipe with the largest diameter.
Each cleaning liquid supply pipe of the cleaning means is washed with different pressure.
It supplies a cleansing liquid with different jetting force to the outer surface of the semiconductor wafer.
A cleaning solution is sprayed on the outer surface of the semiconductor wafer without contact.
Can be washed. Therefore, each cleaning liquid supply pipe
The spraying force of the cleaning liquid of each nozzle connected to can be changed arbitrarily,
Precision cleaning is possible without contact. Also, without contact
Precise cleaning removes foreign matter from the outer surface of the semiconductor wafer.
It can be prevented from adhering.
【００２６】また、請求項２に係る発明によれば、各洗
浄液供給管の外周に夫々取り付けられた複数のノズル
で、各洗浄液供給管に供給された洗浄液を半導体ウェハ
の外表面に向けて噴射することができる。したがって、
半導体ウェハ面の外表面を非接触で洗浄することができ
る。 さらに、請求項３に係る発明によれば、回転する複
数の洗浄液供給管の夫々に備えた複数のノズルで、複数
の洗浄液供給管を回転し、各洗浄液供給管に供給された
洗浄液を半導体ウェハの外表面に向けて噴射することが
できる。したがって、各ノズルにおける洗浄液の噴射角
度及び噴射力が可変するので、半導体ウェハ面の外表面
をきれいに洗浄することができる。 According to the invention of claim 2, each washing
Multiple nozzles attached to the outer circumference of the clean liquid supply pipe
The cleaning liquid supplied to each cleaning liquid supply pipe to the semiconductor wafer.
Can be injected towards the outer surface of the. Therefore,
The outer surface of the semiconductor wafer surface can be cleaned without contact.
It Further, according to the invention of claim 3, the rotating compound
Number of cleaning liquid supply pipes with multiple nozzles
The cleaning liquid supply pipe of was rotated and supplied to each cleaning liquid supply pipe.
The cleaning liquid can be sprayed toward the outer surface of the semiconductor wafer.
it can. Therefore, the spray angle of the cleaning liquid at each nozzle
Degree and ejection force are variable, so the outer surface of the semiconductor wafer surface
Can be washed cleanly.
【００２７】そして、請求項４に係る発明によれば、各
洗浄液供給管で径が異なるようされた複数のノズルで、
洗浄液を半導体ウェハ面に向けて噴射することができ
る。したがって、各洗浄液供給管のノズル毎に噴射力が
可変でき、半導体ウェハ面の外表面をきれいに洗浄する
ことができる。 According to the invention of claim 4, each
With multiple nozzles with different diameters in the cleaning liquid supply pipe,
Cleaning liquid can be sprayed toward the semiconductor wafer surface
It Therefore, the injection force is different for each nozzle of each cleaning liquid supply pipe.
It is variable and cleans the outer surface of the semiconductor wafer surface.
be able to.
【図１】本発明の実施の形態を示す洗浄液供給管の斜視
図。FIG. 1 is a perspective view of a cleaning liquid supply pipe showing an embodiment of the present invention.
【図２】図１のＡ−Ａ' 線拡大断面図。FIG. 2 is an enlarged cross-sectional view taken along the line AA ′ of FIG.
【図３】図１のＢ−Ｂ’線拡大断面図。3 is an enlarged cross-sectional view taken along the line B-B ′ of FIG.
【図４】洗浄装置の平面図。FIG. 4 is a plan view of the cleaning device.
【図５】洗浄装置の側面図。FIG. 5 is a side view of the cleaning device.
【図６】別の実施の形態を示す平面図。FIG. 6 is a plan view showing another embodiment.
【図７】同上平面図。FIG. 7 is a plan view of the same.
【図８】同上側面図。FIG. 8 is a side view of the same.
【図９】ＣＭＰの動作説明図。FIG. 9 is an operation explanatory diagram of CMP.
【図１０】ＣＭＰ装置の斜視図。FIG. 10 is a perspective view of a CMP apparatus.
【図１１】従来のＣＭＰ装置の洗浄装置の概略図。FIG. 11 is a schematic view of a conventional CMP apparatus cleaning apparatus.
【図１２】図１１の側面図。FIG. 12 is a side view of FIG. 11.
【符号の説明】 ４ 半導体ウェハ １１ 洗浄液供給管 １２ 太管 １３ 細管 １４ ノズル（１４−１〜１４−ｎ） １５ ノズル（１５−１〜１５−ｎ）[Description of Reference Signs] 4 semiconductor wafer 11 cleaning liquid supply pipe 12 thick pipe 13 thin pipe 14 nozzles (14-1 to 14-n) 15 nozzles (15-1 to 15-n)
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平７−283185（ＪＰ，Ａ) 特開 平７−115060（ＪＰ，Ａ) 特開 昭59−86226（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/304 B08B 3/00 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-7-283185 (JP, A) JP-A-7-115060 (JP, A) JP-A-59-86226 (JP, A) (58) Field (Int.Cl. 7 , DB name) H01L 21/304 B08B 3/00
Claims (4)
造装置の洗浄装置において、径の異なる洗浄液供給管を複数備え、径の大きい洗浄液
供給管の中に径の小さい洗浄液供給管を順次挿入し、各
洗浄液供給管の外周にノズルを取り付けて、各ノズル先
端を最も径の大きい洗浄液供給管の外面まで延ばし、各
洗浄液供給管に異なる圧力で洗浄液を供給し、 前記半導
体ウェハの外表面に洗浄液を吹きつけて非接触で該半導
体ウェハの外表面を洗浄する洗浄手段を備えて構成され
たことを特徴とする半導体製造装置の洗浄装置。1. A cleaning device of a semiconductor manufacturing apparatus for cleaning an outer surface of a semiconductor wafer, comprising a plurality of cleaning liquid supply pipes having different diameters, the cleaning liquid having a large diameter.
Insert the cleaning solution supply pipe with a small diameter into the supply pipe in order,
Attach a nozzle to the outer periphery of the cleaning liquid supply pipe, and
Extend the end to the outer surface of the cleaning liquid supply pipe with the largest diameter, and
The cleaning liquid is supplied at different pressures in the cleaning solution supply pipe, constructed by spraying a cleaning liquid to the outer surface of the semiconductor wafer in a non-contact manner includes a cleaning means for cleaning the outer surface of the semiconductor <br/> body wafer A cleaning device for semiconductor manufacturing equipment, characterized in that
に夫々複数取り付けられて、該各洗浄液供給管に供給さ
れた洗浄液を半導体ウェハの外表面に向けて噴射するよ
うに構成されたことを特徴とする請求項１に記載の半導
体製造装置の洗浄装置。Wherein said nozzle is said periphery respectively a plurality attached to each cleaning liquid supply pipe is injected toward the cleaning liquid supplied to the respective cleaning liquid supply pipe on the outer surface of the semiconductor wafer
The cleaning apparatus for a semiconductor manufacturing apparatus according to claim 1, wherein the cleaning apparatus is configured as described above.
に構成されたことを特徴とする請求項１又は請求項２に
記載の半導体製造装置の洗浄装置。Wherein said plurality of cleaning liquid supply pipe, the cleaning device of the semiconductor manufacturing apparatus according to claim 1 or claim 2, characterized in that it is configured to rotate.
浄液供給管で異なるように構成されたことを特徴とする
請求項２又は請求項３に記載の半導体製造装置の洗浄装
置。Wherein said plurality of nozzles, the diameter of each nozzle each wash
The cleaning device for a semiconductor manufacturing apparatus according to claim 2 or 3, wherein the cleaning liquid supply pipes are configured differently.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04621597A JP3399772B2 (en) | 1997-02-28 | 1997-02-28 | Cleaning equipment for semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04621597A JP3399772B2 (en) | 1997-02-28 | 1997-02-28 | Cleaning equipment for semiconductor manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10242100A JPH10242100A (en) | 1998-09-11 |
| JP3399772B2 true JP3399772B2 (en) | 2003-04-21 |
Family
ID=12740890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04621597A Expired - Fee Related JP3399772B2 (en) | 1997-02-28 | 1997-02-28 | Cleaning equipment for semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3399772B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10321572A (en) * | 1997-05-15 | 1998-12-04 | Toshiba Corp | Both-surface cleaning apparatus for semiconductor wafer and polishing method for semiconductor wafer |
| KR100420445B1 (en) * | 2001-03-31 | 2004-03-03 | (주)케이.씨.텍 | apparatus for injecting a fluid |
| KR100500517B1 (en) * | 2002-10-22 | 2005-07-12 | 삼성전자주식회사 | CMP equipment to Semiconductor Wafer |
| US20110182653A1 (en) * | 2010-01-26 | 2011-07-28 | Miller Kenneth C | Variable Pressure Brush/Pad |
| US9202723B2 (en) * | 2011-11-29 | 2015-12-01 | Illinois Tool Works, Inc. | Brush with cantilevered nodules |
| KR101412643B1 (en) * | 2012-06-29 | 2014-07-08 | 주식회사 티지오테크 | Gas Supplying Unit for Supplying Multiple Gases and Method for Manufacturing said Gas Supplying Unit |
| KR102181099B1 (en) * | 2014-04-17 | 2020-11-20 | 주식회사 케이씨텍 | Substrate cleaning apparatus |
-
1997
- 1997-02-28 JP JP04621597A patent/JP3399772B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10242100A (en) | 1998-09-11 |
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