JP3393998B2 - Gas component deposition electrode structure in unreacted gas purification equipment - Google Patents
Gas component deposition electrode structure in unreacted gas purification equipmentInfo
- Publication number
- JP3393998B2 JP3393998B2 JP30197398A JP30197398A JP3393998B2 JP 3393998 B2 JP3393998 B2 JP 3393998B2 JP 30197398 A JP30197398 A JP 30197398A JP 30197398 A JP30197398 A JP 30197398A JP 3393998 B2 JP3393998 B2 JP 3393998B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- plasma
- ground electrode
- gas
- plasma electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】
【０００１】
【発明の属する技術分野】ＣＶＤ法（化学気相蒸着法）
等により半導体を製造する際に、排出される未反応のプ
ロセスガスには、凝結成分や有毒ガスが含まれる。本発
明は、これらの凝結成分等を除去する装置の改良に関す
る。
【０００２】
【従来の技術】ＣＶＤ法等により半導体を製造する際に
使用されるプロセスガスの余剰分は排気ガスとして外部
に排出され、その排出ガスは、９０％以上をＨＦプラズ
マ分解してトラップ上に堆積捕獲している。しかし捕獲
を逃れた余剰排出ガスが配管や真空ポンプ内で冷却さ
れ、これに含まれる凝結成分が凝結し、配管や真空ポン
プを目詰まりさせて半導体の製造を停滞させる原因とな
っている。また、真空ポンプ中のオイルと反応したり、
真空ポンプの性能を低下させる原因にもなっている。さ
らに、この余剰排出ガスには有毒成分が含まれており、
そのままの状態では廃棄できない。この余剰排出ガスに
含まれる凝結成分や有毒成分を除去する装置としては、
図２に示すように、アルミニウム板を螺旋状に巻いてな
るプラズマ電極２を高周波電源３に接続し、同様にアル
ミニウム板を螺旋状に巻いてなるグランド電極４を装置
内壁に接続し、プラズマ電極２とグランド電極４を交互
になるように配置し、余剰排出ガスに含まれる凝結成分
や有毒成分を固形化してこのプラズマ電極２，グランド
電極４上に堆積させて除去するものがある。
【０００３】
【発明が解決しようとする課題】しかし、上記余剰排出
ガスに含まれる凝結成分や有毒成分を除去する未反応ガ
ス浄化装置は、プラズマ電極２及びグランド電極４のう
ちの吸気口に近い部分及び排気口に近い部分（特に低温
部分）に集中して堆積物が蓄積する。従って、吸気口に
近い部分及び排気口に近い部分が、他の部分が詰まって
いないのにも拘らず詰まってしまい、すぐに装置が使用
不能になるという欠点がある。また、プラズマ電極２及
びグランド電極４に付着した堆積物は、砒素などの有毒
物を含むので、プラズマ電極２及びグランド電極４（固
形化堆積用電極）を廃棄する際には、廃棄物の毒性を気
遣わなくてはならず、処理が面倒である。
【０００４】そこで本発明は、固形化堆積用電極（プラ
ズマ電極及びグランド電極）の交換寿命を大きく延ばす
と共に、交換後の廃棄に際して環境保全上良く、しかも
簡便に処理可能な固形化堆積用電極を提供することを目
的とする。
【０００５】
【課題を解決するための手段】すなわち本発明は、プラ
ズマ電極およびグランド電極を交互に配置し、プラズマ
電極は高周波電源に、またグランド電極は装置内壁にそ
れぞれ接続し、これら電極間にＣＶＤ法等による半導体
製造システムの余剰排出ガスやプラズマ分解ガスを供給
して、これらのガスに含まれる凝結成分や有毒成分を電
極上に堆積させて取り除く未反応ガス浄化装置におい
て、ガラス繊維製シートの表面を導電性物質でコーティ
ングした導電シートにより、前記プラズマ電極及びグラ
ンド電極を形成して成る。
【０００６】
【発明の実施の形態】本発明の実施の形態を図面に示し
て説明する。図１は、固形化堆積用電極の拡大断面図，
図２はＣＶＤ法による半導体製造システムの未反応ガス
浄化装置の概略図である。１は未反応ガス浄化装置であ
り、高周波電源３に接続した螺旋状のプラズマ電極２
と、プラズマ電極２と同様螺旋状のグランド電極４を交
互に配置し、堆積物除去容器５内に収容したものであ
る。そして、余剰排出ガスは、窒化物反応器６、水分除
去装置７をルートポンプ８を介し、この未反応ガス浄化
装置１内に供給される。そして、プラズマ電極２及びグ
ランド電極４と接触した後、未反応ガス浄化装置１の排
気口から、これと接続した配管９及び真空ポンプ１０を
通り排出される。前記プラズマ電極２及びグランド電極
４は、図１に示すようにガラス繊維製シート１１の表面
にプラズマスパッタリング法等により導電性物質１２を
コーティングした後、織成し布にした導電シートや、あ
るいはガラス繊維製の布の表面にプラズマスパッタリン
グ法により導電性物質をコーティングし、導電シートと
して使用する。
【０００７】このようにしてなるプラズマ電極２及びグ
ランド電極４は、金属板に比較し表面積が格段に増大す
る（例えば０．３ｍｍ径のガラス繊維の表面に金属をコ
ーティングすると、表面積が平板電極の約５倍になる）
ので、余剰排出ガスに含まれる凝結成分や有毒成分を固
形化して堆積することのできる面積が増大し、プラズマ
電極２及びグランド電極４の交換寿命を大きく延ばすこ
とができる。しかも、プラズマ電極２及びグランド電極
４の表面積増大により熱輻射の効率がよくなり、プラズ
マ電極２及びグランド電極４は、吸気口に近い部分及び
排気口に近い部分以外にも堆積物が蓄積するので、より
一層未反応ガス浄化装置１が長寿命化する。そして、プ
ラズマ電極２に及びグランド電極４堆積物が大量に蓄積
して交換寿命に達した場合には、プラズマ電極２及びグ
ランド電極４を取出して新しいものと交換し、古いもの
は、アークプラズマ溶鉱炉などに入れて溶解した後、セ
ラミックス製の型に入れ固化すれば、ガラス煉瓦となる
ので、廃棄物の毒性成分も熔融ガラス内に封止して環境
汚染を起こすことなく廃棄できる。
【０００８】なお、上記実施形態では、プラズマ電極２
を高周波電源３に接続したが、余剰排出ガスによっては
冷却だけでよい場合もある。このような場合には、プラ
ズマ電極２を高周波電源３に接続せず、液体窒素などで
プラズマ電極２及びグランド電極４を冷却すればよい。
【０００９】また、上記実施形態では、プラズマ電極２
及びグランド電極４は、織布を使用しているが、径の細
いガラス繊維を使用する場合には、不織布にしてもよ
い。また、織布の織り方も限定しないが、余り目を詰め
て織ると、堆積物を蓄積しにくいので、適度に隙間をあ
けて織ったほうがよい。また、高周波電源３は、ＨＦ電
源とＲＦ電源の両方を含む。なお、上記実施の形態で
は、プラズマ電極２及びグランド電極４を螺旋状に形成
しているが、これに限るものではなく、プラズマ電極２
及びグランド電極４を櫛歯状に形成し、対向させてもよ
い。
【００１０】
【発明の効果】これを要するに、本発明では、プラズマ
電極及びグランド電極を、ガラス繊維製の布の表面に導
電性物質をコーティングしてなる導電シートで形成する
ので、金属板に比較し表面積が格段に増大し、余剰排出
ガスに含まれる凝結成分や有毒成分を固形化して堆積す
ることのできる面積が増大する。さらに、表面積増大に
より熱輻射の効率がよくなり、プラズマ電極及びグラン
ド電極は、吸気口に近い部分及び排気口に近い部分以外
にも堆積物が蓄積するという効果も相俟って、未反応ガ
ス浄化装置が長寿命化する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical vapor deposition (CVD) method.
When a semiconductor is manufactured by the method described above, the unreacted process gas discharged contains condensed components and toxic gases. The present invention relates to an improvement in an apparatus for removing such condensed components and the like. 2. Description of the Related Art A surplus of a process gas used in manufacturing a semiconductor by a CVD method or the like is exhausted to the outside as an exhaust gas, and 90% or more of the exhaust gas is decomposed by HF plasma and trapped. The sediment is captured on top. However, the surplus exhaust gas that escaped the capture is cooled in the piping and the vacuum pump, and the condensed components contained therein condense, causing clogging of the piping and the vacuum pump, causing a stagnation of semiconductor production. Also reacts with the oil in the vacuum pump,
It also causes the performance of the vacuum pump to deteriorate. In addition, this surplus exhaust gas contains toxic components,
It cannot be discarded as it is. As a device for removing condensed components and toxic components contained in this excess exhaust gas,
As shown in FIG. 2, a plasma electrode 2 formed by spirally winding an aluminum plate is connected to a high-frequency power source 3, and a ground electrode 4 similarly formed by spirally winding an aluminum plate is connected to the inner wall of the device. 2 and the ground electrode 4 are arranged alternately, and solidification components and toxic components contained in the excess exhaust gas are solidified and deposited on the plasma electrode 2 and the ground electrode 4 to be removed. [0003] However, an unreacted gas purifying apparatus for removing condensed components and toxic components contained in the above-mentioned surplus exhaust gas is close to an intake port of the plasma electrode 2 and the ground electrode 4. Sediment accumulates in a part and a part near the exhaust port (particularly, a low-temperature part). Therefore, there is a disadvantage that the portion close to the intake port and the portion close to the exhaust port are clogged though the other portions are not clogged, and the device becomes immediately unusable. Further, since the deposits adhered to the plasma electrode 2 and the ground electrode 4 contain toxic substances such as arsenic, when the plasma electrode 2 and the ground electrode 4 (solidification deposition electrode) are discarded, the Must be taken care of, and the processing is troublesome. Accordingly, the present invention is to provide a solid deposition electrode which can greatly increase the life of replacement of the solid deposition electrode (plasma electrode and ground electrode), and which can be easily treated with good environmental protection when disposed after replacement. The purpose is to provide. That is, according to the present invention, a plasma electrode and a ground electrode are alternately arranged, a plasma electrode is connected to a high-frequency power supply, and a ground electrode is connected to an inner wall of the apparatus. An unreacted gas purifying apparatus that supplies surplus exhaust gas and plasma decomposition gas of a semiconductor manufacturing system by a CVD method or the like and deposits and removes condensed components and toxic components contained in these gases on an electrode. The plasma electrode and the ground electrode are formed by a conductive sheet whose surface is coated with a conductive material. Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is an enlarged sectional view of an electrode for solidification deposition,
FIG. 2 is a schematic diagram of an unreacted gas purifying apparatus of a semiconductor manufacturing system by a CVD method. Reference numeral 1 denotes an unreacted gas purification device, which is a spiral plasma electrode 2 connected to a high-frequency power supply 3.
And a spiral ground electrode 4 like the plasma electrode 2 are alternately arranged and housed in a deposit removal container 5. The surplus exhaust gas is supplied to the unreacted gas purifying device 1 through the nitride reactor 6 and the water removing device 7 via the route pump 8. Then, after coming into contact with the plasma electrode 2 and the ground electrode 4, the gas is exhausted from the exhaust port of the unreacted gas purification device 1 through the pipe 9 and the vacuum pump 10 connected thereto. As shown in FIG. 1, the plasma electrode 2 and the ground electrode 4 are formed by coating a surface of a glass fiber sheet 11 with a conductive substance 12 by a plasma sputtering method or the like and then woven into a cloth, or a glass fiber sheet. The surface of the cloth is coated with a conductive substance by a plasma sputtering method and used as a conductive sheet. [0007] The surface area of the plasma electrode 2 and the ground electrode 4 formed as described above is significantly increased as compared with a metal plate. About 5 times)
Therefore, the area in which the condensed components and toxic components contained in the surplus exhaust gas can be solidified and deposited increases, and the exchange life of the plasma electrode 2 and the ground electrode 4 can be greatly extended. In addition, the efficiency of heat radiation is improved due to the increase in the surface area of the plasma electrode 2 and the ground electrode 4, and the plasma electrode 2 and the ground electrode 4 accumulate deposits in portions other than the portion near the intake port and the portion near the exhaust port. As a result, the life of the unreacted gas purifying device 1 is further extended. Then, when a large amount of deposits accumulate on the plasma electrode 2 and the ground electrode 4 and the replacement life is reached, the plasma electrode 2 and the ground electrode 4 are removed and replaced with a new one, and the old one is replaced with an arc plasma blast furnace. After melting in a ceramic mold and solidifying it in a ceramic mold, it becomes a glass brick. Therefore, toxic components of waste can be sealed in the molten glass and discarded without causing environmental pollution. In the above embodiment, the plasma electrode 2
Is connected to the high-frequency power supply 3, but depending on the surplus exhaust gas, only cooling may be required in some cases. In such a case, the plasma electrode 2 and the ground electrode 4 may be cooled with liquid nitrogen or the like without connecting the plasma electrode 2 to the high frequency power supply 3. In the above embodiment, the plasma electrode 2
Although the woven cloth is used for the ground electrode 4, when a glass fiber having a small diameter is used, a nonwoven cloth may be used. The weaving of the woven fabric is not limited, but if the woven fabric is tightly packed, it is difficult to accumulate the sediment. The high-frequency power supply 3 includes both an HF power supply and an RF power supply. In the above embodiment, the plasma electrode 2 and the ground electrode 4 are formed in a spiral shape. However, the present invention is not limited to this.
Alternatively, the ground electrode 4 may be formed in a comb-like shape and opposed to each other. In summary, according to the present invention, the plasma electrode and the ground electrode are formed of a conductive sheet formed by coating a conductive material on the surface of a glass fiber cloth. The surface area is significantly increased, and the area where the condensed components and toxic components contained in the surplus exhaust gas can be solidified and deposited is increased. In addition, the efficiency of heat radiation is improved by increasing the surface area, and the plasma electrode and the ground electrode combine with the effect that deposits accumulate in portions other than the portion near the intake port and the portion near the exhaust port, and unreacted gas The purifier has a longer life.
【図面の簡単な説明】 【図１】プラズマ電極の拡大断面図である。 【図２】未反応ガス浄化装置の概略図である。 【符号の説明】 １ 未反応ガス浄化装置 ２ プラズマ電極 ３ 高周波電源 ４ グランド電極 １１ ガラス繊維製シート １２ 導電性物質[Brief description of the drawings] FIG. 1 is an enlarged sectional view of a plasma electrode. FIG. 2 is a schematic diagram of an unreacted gas purification device. [Explanation of symbols] 1 Unreacted gas purifier 2 Plasma electrode 3 High frequency power supply 4 Ground electrode 11 Glass fiber sheet 12 conductive substances
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０１Ｌ 21/31 Ｂ０１Ｄ 53/34 １２０Ａ (58)調査した分野(Int.Cl.7，ＤＢ名) B01D 53/34 - 53/85 B01J 19/08 H01L 21/00 C23C 16/44 ──────────────────────────────────────────────────続 き Continuation of the front page (51) Int.Cl. 7 identification code FI H01L 21/31 B01D 53/34 120A (58) Investigated field (Int.Cl. 7 , DB name) B01D 53/34-53 / 85 B01J 19/08 H01L 21/00 C23C 16/44
Claims (1)
置し、プラズマ電極は高周波電源に、またグランド電極
は装置内壁にそれぞれ接続し、これら電極間にＣＶＤ法
等による半導体製造システムの余剰排出ガスやプラズマ
分解ガスを供給して、これらのガスに含まれる凝結成分
や有毒成分を電極上に堆積させて取り除く未反応ガス浄
化装置において、 ガラス繊維製シートの表面を導電性物質でコーティング
した導電シートにより、前記プラズマ電極及びグランド
電極を形成して成るガス成分堆積電極構造。(57) [Claims 1] A plasma electrode and a ground electrode are alternately arranged, a plasma electrode is connected to a high-frequency power supply, and a ground electrode is connected to an inner wall of the apparatus. An unreacted gas purifier that removes condensed and toxic components contained in these gases by supplying surplus exhaust gas and plasma decomposition gas from the semiconductor manufacturing system according to A gas component deposition electrode structure in which the plasma electrode and the ground electrode are formed by a conductive sheet coated with a conductive substance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30197398A JP3393998B2 (en) | 1998-10-23 | 1998-10-23 | Gas component deposition electrode structure in unreacted gas purification equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30197398A JP3393998B2 (en) | 1998-10-23 | 1998-10-23 | Gas component deposition electrode structure in unreacted gas purification equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000126546A JP2000126546A (en) | 2000-05-09 |
| JP3393998B2 true JP3393998B2 (en) | 2003-04-07 |
Family
ID=17903368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30197398A Expired - Fee Related JP3393998B2 (en) | 1998-10-23 | 1998-10-23 | Gas component deposition electrode structure in unreacted gas purification equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3393998B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9133546B1 (en) | 2014-03-05 | 2015-09-15 | Lotus Applied Technology, Llc | Electrically- and chemically-active adlayers for plasma electrodes |
| CN108392952B (en) * | 2018-04-12 | 2023-10-27 | 宁波大学 | Plasma organic waste gas purifying system |
| KR102538959B1 (en) * | 2021-04-14 | 2023-06-01 | 주식회사 퓨어플라텍 | Plasma reactor for treating exhaust gas |
-
1998
- 1998-10-23 JP JP30197398A patent/JP3393998B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000126546A (en) | 2000-05-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5407704A (en) | CVD apparatus and method | |
| EP1145759B1 (en) | Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions | |
| EP0839930B1 (en) | Apparatus for vacuum line cleaning in substrate processing equipment | |
| EP0839929B1 (en) | Method and apparatus for minimizing deposition in an exhaust line | |
| EP0823279A2 (en) | Method and apparatus for treating exhaust gases from CVD, PECVD or plasma etch reactors | |
| US6238514B1 (en) | Apparatus and method for removing condensable aluminum vapor from aluminum etch effluent | |
| KR100821263B1 (en) | Plasma scrubber system having WSCS-Water Separator Cooling System and method for treating with toxic gas using the same | |
| EP1180785A2 (en) | Means for directing a flow of gas in a substrate processing chamber | |
| JP2001527158A (en) | Gas trap for CVD equipment | |
| JPS60114570A (en) | Evacuating system for plasma cvd device | |
| JP2008098283A (en) | Exhaust system, collection unit and processor using the same | |
| JP3393998B2 (en) | Gas component deposition electrode structure in unreacted gas purification equipment | |
| JP3539446B2 (en) | By-product trap device and cleaning method thereof | |
| JPH07309614A (en) | Method for purifying silicon | |
| JP3171593B2 (en) | Trap device | |
| CN1257999C (en) | Apparatus for exhaust white powder elimination in substrate processing | |
| KR100483577B1 (en) | Apparatus for processing waste gas | |
| CN210845584U (en) | Chemical vapor deposition tail gas online recovery processing device | |
| JPH07506289A (en) | Methods for converting reactive gases, dry multistage pumps, plasma scrubbers | |
| TWI746592B (en) | Apparatus and method of atomic layer deposition having a recycle module | |
| KR20030081592A (en) | Equipment for removing a by-product of exhast line in semiconductor product device | |
| KR102256549B1 (en) | Apparatus with multistaged cooling | |
| KR100432895B1 (en) | Powder trap device of a semiconductor manufacture equipment | |
| JPH11188231A (en) | Depolluting device for waste gas and depolluting method of waste gas | |
| JP2003247075A (en) | Lpcvd apparatus, and thin film deposition method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20030107 |
|
| LAPS | Cancellation because of no payment of annual fees |