JP3376588B2 - Method for manufacturing semiconductor device - Google Patents

Description

Detailed Description of the Invention

[0001]

The present invention relates also relates <br/> the manufacturing technology of the semi-conductor device, in particular CVD (Chemical Vapor Deposition: chemical vapor deposition) method or a PVD: forming a thin film according to (Physical Vapor Deposition vacuum deposition) method Semi with equipment and transport means
The present invention relates to a method for manufacturing a conductor device .

[0002]

2. Description of the Related Art In a semiconductor manufacturing process, there is a process of growing a superlattice on the surface of a wafer which is a single crystal substrate such as silicon or gallium arsenide. Previously, the literature (Seijiro Furukawa, Introduction to Ultrafine Machining, Ohmsha, 1989.6.20, pp110-124, Fig. 5.2, Fig. 5.4, Fig. 5.8,
As shown in Fig.5.11), after installing several substrates in a vacuum container, the inside of the container is evacuated, and the supply of a predetermined gas is controlled by opening and closing a valve, or in the vicinity of the substrate. The shielding plate placed was rocked to form a thin film on the substrate surface. After this process, a batch process was performed in which the inside of the container was opened to atmospheric pressure and the substrate to be processed was taken out.

[0003]

In the above prior art,
It is a batch process in which several substrates to be processed are set in advance in a vacuum device and then taken out after processing, so it is not possible to continuously supply the substrates to be processed and perform processing, which is a problem in that throughput in mass production is improved. was there. When controlling the thin film formation by swinging the shield plate directly above the substrate to be processed,
Due to the poor drive response of the shield plate having a large mass, there is a limit in controlling the film thickness of the thin film. In a device that forms a thin film by adjusting the amount of supply gas by opening and closing a valve, the introduced gas cannot be discharged in a short time because the internal volume of the device is large, and it is difficult to control the film thickness of the thin film with high accuracy. . When the vacuum is broken to remove the substrate from the vacuum device after forming the thin film, there is a problem that the substances scattered in the device are scattered or floated and are deposited on the substrate surface.

An object of the present invention is to mainly solve these four problems, and realizes a processing apparatus capable of continuously operating a substrate to be processed, a shield mechanism capable of high-speed driving, and an internal volume of the apparatus. It is possible to realize processing means that is not affected by the supply and discharge rates of atmospheric gas that depends on the like, and to realize means that isolates the substrate to be processed independently from the atmosphere in the apparatus and reduces the space volume that occupies the periphery of the substrate. To do.

[0005]

In order to achieve the above object, a wafer holder having a film-like shutter mechanism that can be opened and closed at a high speed in the vicinity immediately above a wafer to be processed has been invented.

[0006]

The wafer can be isolated from the surrounding atmosphere by closing the film-like shutter immediately above the surface of the wafer to be processed.

[0007]

EXAMPLE An example of the present invention will be described with reference to FIGS. 1 to 14, parts having common functions are designated by the same numbers.

1 to 4 are sectional views of a holder according to a first embodiment of the present invention. The holder base 1 has a sample chamber 21 in which a wafer 2 as a sample to be processed is installed. The holder base 1 is connected to the holder top 3 via holder columns 4. The shape of the sample chamber 21 has an inner peripheral wall that follows the outer periphery of the wafer 2, and the bottom thereof has a structure in which the surface of the wafer 2 is at a position lower than the surface of the holder base 1 by about 5 μm to 100 μm. A film 10 having a thickness of 5 μm to 20 μm is installed on the surface of the holder base 1 at a position so as to cover the opening of the sample chamber 21. In this sectional view, the left end portion 13 of the film 10 is fixed to the upper surface of the holder base 1, and the right end portion 14 is fixed to the lower surface of the holder top 3. A bent active portion 15 of the film sandwiched between the left end 13 and the right end 14 of the film 10.
Is a structure that can be moved so as to be grounded or peeled off one after another so as to follow the surface of the holder base 1. An example of the transition of the active part 15 is shown in FIGS. Figure 1
Is a state in which the active portion 15 is located at the right end and completely covers the opening of the sample chamber 21. FIG. 2 shows a state in which the active part 15 has moved and a part of the opening of the sample chamber 21 is open. In FIG. 3, the active portion 15 is located at the left end, and the sample chamber 21
The opening is open. When the opening of the sample chamber 21 is opened, the surface of the wafer 2 is exposed to the surrounding atmosphere, and when the opening is completely covered, the surface of the wafer 2 is isolated from the surrounding atmosphere. The wafer 2 installed in the sample chamber 21 is handled by a handling mechanism (not shown).
It can be exchanged with an external sample. FIG. 4 is a view showing a state after the opening of the sample chamber 21 is opened and the wafer is taken out.

Next, the driving method of the film 10 will be described with reference to FIGS.
Will be explained. 5 and 6 are cross-sectional views showing the structure of the second embodiment of the present invention, which is a cross-sectional view showing a state in which the peripheral region is cut without traversing the sample chamber provided in the holder base 1. The left end portion of the film 10 stretched between the holder base 1 and the holder top 3 connected by the holder support column 4 is fixed on the holder base 1 by a part of the holder support column 4, and the right end portion is similarly fixed. It is fixed on the lower surface of the holder top 3 by the tool 12. On the upper surface of the holder base 1 and the lower surface of the holder top 3, electrodes 5 and 6 for driving the film 10 by electrostatic force and insulating films 7 and 8 are provided.
And the lead wire 11 are formed in advance. These electrodes, insulating films, and lead wires can be produced by applying known semiconductor manufacturing process technology or the like. In the present invention, the holder base 1, the holder column 4, and the holder top 3 are made of glass material, and the electrodes 5 and 6 are made of aluminum or titanium,
A metal such as platinum was sputter-deposited, and the insulating films 7 and 8 were formed by sputtering a silicon oxide film. The film 10 is made of stainless steel as a conductive material and is connected to the lead wire 11 at the left end. Next, a method of applying a voltage to each electrode will be described. As shown in FIG. 5, the electrode 5 and the film 10
When and are connected to the-side of the power supply control circuit 9 and the electrodes 6 are connected to the + side of the power supply control circuit 9, the film 10 is sequentially attracted and lifted from the right end to the holder top side, as shown in FIGS. 1 to 3. The movement of the film active part is as follows. Conversely, when the circuit is switched and the electrode 6 and the film 10 are connected to the-side of the power supply control circuit 9 and the electrode 5 is connected to the + side of the power supply control circuit 9 as shown in FIG. The film is sequentially sucked from the left end to the base side, and the film active portion moves as shown in the order of FIG. 3 to FIG. in this way,
Since the structure is such that a thin film is moved by electrostatic force, the structure is simple and the opening / closing operation can be performed at high speed. Further, since the holder of the present invention can open the surface of the wafer to the atmosphere as needed, in the steps such as thin film growth and dry etching in the semiconductor manufacturing process, the exhaust speed is slow when switching the gas in the vacuum device. It has become possible to solve the conventional problem that the precision of the thin film could not be improved due to the above.

7 to 10 show side views of a third embodiment of the present invention. The holder base 1 having a sample chamber 21 for accommodating the wafer 2 and the holder top 3 are connected by parallel link mechanisms 31 and 32. The holder top 3 and the holder base 1 have a structure in which the positions are kept parallel to each other and the distance therebetween can be varied.
34 allows locking with maximum clearance. The right end of the film 10 which covers the sample chamber 21 and serves as a shutter is adhered to the holder top 3, and the left end is adhered to the holder base 1. In FIG. 7, the holder top 3 is the film 10
It shows a state of being in contact with the holder base 1 via. Therefore, since the film 10 is pressed against the holder base by the holder top, the wafer in the sample chamber 21 can be kept isolated even if the power control circuit is removed. Therefore, from a given processor to another processor,
While keeping the wafer in the sample chamber 21 clean,
Alternatively, the holder and the holder can be detached and conveyed while maintaining a predetermined pressure such as vacuum. This can contribute to an improvement in product yield in a semiconductor manufacturing process that is unfavorable to the effects of pollution and oxidation due to exposure to the atmosphere. In addition,
In this example, there are also advantages that the distance between the holder top and the holder base becomes small, the space for transportation and storage is reduced, and the handling becomes easy. In FIG. 8, the holder top 3 is lifted by a lifting means (not shown) to lock the lock mechanisms 33, 34.
The figure shows a state in which the film is fixed and connected to a power supply control circuit (not shown) for moving the film. Film 1
The active part of 0 is located at the right end and seals the sample chamber containing the wafer 2. FIG. 9 shows a state in which the film 10 is moved to open a part of the sample chamber and a part of the surface of the wafer 2 is exposed to the atmosphere by switching a power supply control circuit (not shown). FIG. 10 shows a state in which the film 10 moves to the left end, the sample chamber is opened, and the entire surface of the wafer 2 is exposed to the atmosphere.

A side view of the fourth embodiment of the present invention is shown in FIGS. The link mechanism 35, 36 connects the holder base 1 and the holder top 3 each having a sample chamber for accommodating a wafer.
The structure is connected by. The link mechanism 36 is longer than the link mechanism 35. The holder top 3 and the holder base 1 have a structure in which the distance between the holder top 3 and the holder base 1 can be varied so as to maintain the maximum angle θ, and can be locked by the stoppers 33 and 34 at the maximum opening angle. Sample chamber 2
The right end of the film 10 serving as a shutter for covering 1 is adhered to the holder top 3, and the left end is adhered to the holder base 1. In FIG. 11, the holder top 3 is the film 10
It shows a state of being in contact with the holder base 1 via. That is, since the film 10 can be continuously pressed against the sample chamber opening, the wafer in the sample chamber can be isolated without the power supply control circuit. In FIG. 12, the holder top 3 is lifted by a lifting mechanism (not shown) to lock the lock mechanisms 33, 34.
The figure shows a state in which the film is fixed and connected to a power supply control circuit (not shown) for moving the film. The active part of the film 10 is located at the right end and seals the sample chamber containing the wafer 2. FIG. 13 shows a state in which the film 10 is moved to the left end, the sample chamber is opened, and the entire surface of the wafer 2 is exposed to the atmosphere. The opened state of the holder of this embodiment is shown in FIG.
Since the gap between the holder base 1 and the holder top 3 can be set wider than in the case of 0, the efficiency of thin film formation and processing on the wafer in the sample chamber is improved.

A side view of the fifth embodiment of the present invention is shown in FIG. Instead of the link mechanism of the fourth embodiment shown in FIGS. 11 to 13, the rotation support guide 37 and the stopper 38 regulate the angle between the holder base 1 and the holder top 3.

In the third and fourth embodiments of the present invention described above, a vacuum seal material such as an O-ring is attached to the surfaces of the holder base and the holder top that face each other, and the sample is held.
After it is stored in the base, it is transferred to the vacuum device, the two are brought into close contact with each other in the vacuum device, the vacuum device is opened to the atmosphere, and the holder is taken out. keep. As a result, the sample chamber in the holder base can also be kept in the clean state obtained by the vacuum device. When the wafer in the sample chamber is processed in the vacuum device, the pressing force due to the atmospheric pressure is eliminated, so that the holder base and the holder top can be easily separated. Further, in order to take out the wafer from the sample chamber under the atmospheric pressure, if the leak valve (not shown) connected to the interface between the holder base and the holder top and the sample chamber is opened, the contact pressure force due to the atmospheric pressure is removed. The wafer can be taken out by separating the holder base and the holder top and opening the film.

With the wafer holder of the present invention, the wafer is once stored in the sample chamber in the vacuum device, and the film shutter is opened.
Close and take it out and transfer it to another vacuum processing unit
Depending on the film opening / closing operation, the wafer holder
With the vacuum condition in the sample chamber kept constant,
For each wafer in the sample chamber of the wafer holder,
It is possible to perform a fixed process.

[0015]

The wafer holder of the present invention is used as a shutter for a film by temporarily storing a wafer in a sample chamber in a vacuum device.
Close and take out, transfer to another vacuum processing unit, and
If necessary, open and close the film
While maintaining a constant atmosphere in the vacuum chamber of Ruda
For each wafer in the sample chamber of the wafer holder.
Can be processed independently in these vacuum processing equipment
It Furthermore, by using the holder having the structure according to the present invention, it is possible to accurately control the amount of various substances deposited and deposited on the wafer, which has an effect of contributing to the production of a new semiconductor device.

[Brief description of drawings]

FIG. 1 is a sectional view of a holder according to a first embodiment of the present invention.

FIG. 2 is a sectional view of a holder according to a first embodiment of the present invention.

FIG. 3 is a sectional view of the holder according to the first embodiment of the present invention.

FIG. 4 is a sectional view of the holder according to the first embodiment of the present invention.

FIG. 5 is a sectional view of a holder according to a second embodiment of the present invention.

FIG. 6 is a sectional view of a holder according to a second embodiment of the present invention.

FIG. 7 is a side view of a holder according to a third embodiment of the present invention.

FIG. 8 is a side view of a holder according to a third embodiment of the present invention.

FIG. 9 is a side view of a holder according to a third embodiment of the present invention.

FIG. 10 is a side view of a holder according to a third embodiment of the present invention.

FIG. 11 is a side view of a holder according to a fourth embodiment of the present invention.

FIG. 12 is a sectional view of a holder according to a fourth embodiment of the present invention.

FIG. 13 is a side view of a holder according to a fourth embodiment of the present invention.

FIG. 14 is a side view of a holder according to a fifth embodiment of the present invention.

[Explanation of symbols]

1 ... Holder base, 2 ... Wafer, 3 ... Holder top, 1
0 ... film, 21 ... sample chamber.

─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A 64-44036 (JP, A) JP-A 3-214645 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/68 H01L 21/205

Claims (2)

(57) [Claims] 1. A wafer, which is kept in a vacuum state, is installed in a sample chamber, a holder in which an opening of the sample chamber is covered with a shutter is transferred into a vacuum processing chamber, and then the shutter is opened. In the method for manufacturing a semiconductor device, there is at least a step of performing a process on the wafer, performing an operation of closing the shutter in a vacuum processing chamber, and independently processing the wafers to be processed in the holder that are sequentially sent . ,Previous
A shutter and a film opening / closing means as a shutter
A method of manufacturing a semiconductor device, comprising: As wherein opening means of said film, said film opened and closed by an electrostatic force, sequentially it sent the incoming claim 1, wherein it has at least a step of performing processing independently of the processed wafer in the holder Of manufacturing a semiconductor device of.