JP3368828B2 - Electroless plating equipment - Google Patents

Electroless plating equipment

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Publication number
JP3368828B2
JP3368828B2 JP16078698A JP16078698A JP3368828B2 JP 3368828 B2 JP3368828 B2 JP 3368828B2 JP 16078698 A JP16078698 A JP 16078698A JP 16078698 A JP16078698 A JP 16078698A JP 3368828 B2 JP3368828 B2 JP 3368828B2
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JP
Japan
Prior art keywords
plating
tank
temperature
solution
electroless
Prior art date
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Expired - Fee Related
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JP16078698A
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Japanese (ja)
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JPH11350148A (en
Inventor
宣明 宮本
聡 珍田
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Hitachi Cable Ltd
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Hitachi Cable Ltd
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Priority to JP16078698A priority Critical patent/JP3368828B2/en
Publication of JPH11350148A publication Critical patent/JPH11350148A/en
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Description

【発明の詳細な説明】 【0001】 【発明の属する技術分野】本発明は、めっきの膜厚を任
意に制御できる無電解めっき装置に関するものである。 【0002】 【従来の技術】テープキャリアを基板に用いるパッケー
ジの開発が、多くのデバイスメーカーで活発に行なわれ
ている。近年、パッケージの小型化、高密度化の進展に
伴なって、TABテープキャリアの配線加工ピッチは益
々微細化が進んでいる。そのため、テープキャリアに電
解めっきを行うための全パターンの導通化および最終工
程での導通リードの切断が困難な状況になってきてい
る。そこで、導通配線不要の無電解めっき技術の確立が
望まれている。 【0003】めっき処理にはさまざまな膜厚の要求があ
り、めっき装置は膜厚の変更に対応できなければならな
い。例えば金(Au)/ニッケル(Ni)めっき膜にボ
ンディングを行なう場合、TABテープキャリアに行な
う金ワイヤボンディングではテープ材自体が柔らかいた
め、硬いニッケル(Ni)の下地膜は5μm以上必要で
ある。また、ギャングボンディングでは、金(Au)は
ある程度の厚さが必要であるが、Niの下地膜は薄い方
が良い。 【0004】ところで、電解めっきは、電流密度に比例
した膜厚でめっきが成膜されるために、電流密度を変化
させることでめっき膜厚の制御が容易に行なわれる。一
方、無電解めっきは、めっき液の温度(めっき液温)に
よって析出速度が変化するため、めっき膜厚はめっき液
温を調整することによって制御することができる。例え
ば、無電解Niめっきはリン(P)を還元剤とする場合
には、液温は90℃程度で行なう必要がある。なぜな
ら、70℃以下では化学反応が起こらず、めっきが析出
しないためである。すなわち、無電解めっきで健全なめ
っき膜を得るためにはある一定の最適温度でめっきを行
う必要がある。 【0005】図4は、従来の無電解めっき装置の説明図
である。21は材料送出装置、23は前処理槽、24は
Ni−Pめっき槽、25はAuめっき槽、26は後処理
槽、22は材料巻取装置である。この装置によるめっき
方法は、リールtoリール方式と呼ばれている。 【0006】テープキャリア等めっきが施される材料
は、材料送出装置21から送出され、前処理槽23でめ
っき前の処理が行なわれる。そして、Ni−Pめっき槽
24とAuめっき槽25を通過して、所定のメッキ膜が
施される。その後、後処理槽26を通過して乾燥処理等
が施されて、材料巻取装置22にて巻取られる。 【0007】均一な膜厚のNi−Pめっき膜を得るため
には、めっき液の温度を90℃一定に保つ必要がある。
そして所定の膜厚が得られるように、膜厚に比例して設
定した時間だけ、それぞれのめっき槽でめっき処理を施
す必要がある。従って、材料送出速度にも依存するが、
所定の膜厚が得られるように、必要な時間だけ材料が温
度一定のめっき槽に浴していなければならず、且つ必要
な時間だけめっき槽に浴するために特定のめっき槽の長
さが必要である。 【0008】 【発明が解決しようとする課題】従来の無電解めっき装
置には以下の問題点があった。 【0009】上述したように、無電解めっきにおけるめ
っき膜厚の制御は、めっき液温により行なわれる。得ら
れるめっき膜の特性を重視するめっきの場合には、めっ
き層を数層に分割し、めっき反応を起こさせるめっき槽
のみ液温を上げ、めっき反応を起こさせないめっき槽も
材料の乾燥防止のために液を循環させ、膜厚を制御する
という方法が必要である。 【0010】しかしこの方法では、各タンクのめっき液
が完全に分割していることにより、タンク毎にそれぞ
れ、めっき液のpH、Ni濃度、還元剤濃度、温度等を
管理する装置が必要となリ、装置が複雑且つコストが高
く付き実用的ではない。 【0011】従って本発明の目的は、前記した従来技術
の欠点を解消し、めっき液の温度並びにめっき槽の槽長
を変えることなくして、任意のめっき膜厚が得られる、
簡易で低コストな無電解めっき装置を提供することにあ
る。 【0012】 【課題を解決するための手段】本発明は上記の目的を実
現するため、めっき槽と、めっき液を貯蔵しておくリザ
ーバタンクと、該リザーバタンクから前記めっき槽に前
記めっき液を循環させるポンプとから成る無電解めっき
装置において、前記めっき槽は、前記めっき液が加熱・
保温される槽と、前記めっき液が加熱されない槽の複数
の槽に分割して成ると共に、前記リザーバタンクは、加
熱・保温されるめっき液と加熱されないめっき液とを、
取り外し可能な遮蔽板により分離した構成である無電解
めっき装置を提供するものである。 【0013】 【0014】 【0015】 【0016】 【発明の実施の形態】図1は、本発明の無電解めっき装
置の第一実施例を示した説明図である。1は第一めっき
槽、2は第二めっき槽、3は第三めっき槽、4は第一ポ
ンプ、5は第二ポンプ、6は第三ポンプ、7は取り外し
可能な遮蔽板、8はめっき液自動管理装置、9はリザー
バタンク、10は加熱・保温めっき液、11は非加熱め
っき液であり、第一めっき槽1と第二めっき槽2と第三
めっき槽3を貫通している矢印は、キャリアテープ材等
の材料の搬送方向を示す。また、各ポンプと各めっき槽
にある矢印は、めっき液の流れを示している。 【0017】上述のように、従来のめっき装置の問題点
は、一定の最適液温で且つ希望する膜厚に対応するめっ
き時間分だけ、めっき槽に材料が浴していなければなら
ない点にあった。そこで、1台のめっき槽と一台のポン
プを1組として複数組(n組:nは整数)用意し、全体
を1つのリザーバタンク9に接続させた。 【0018】図1の第一実施例では、nを3とし、リザ
ーバタンク9に関しては、加熱・保温めっき液10と非
加熱めっき液11をリザーブするように2つの部分に、
取り外し可能な遮蔽板7により分割した。この状態で加
熱・保温めっき液10を第一ポンプ4より第一めっき槽
1に循環させる。また、非加熱めっき液11を第二ポン
プ5と第三ポンプ6により、第二めっき槽2と第三めっ
き槽3に循環させる。そうすることにより、めっき反応
が進行するめっき槽と、めっき反応が行なわれないめっ
き槽とに区分することができる。そして、リザーバタン
ク9は完全にn槽に分割した無電解めっき装置の場合と
異なり、めっき液中成分の組成、pH、温度を管理する
めっき液自動管理装置8は、リザーバタンク9内に1組
設置すれば良い。従って装置の低コスト化と簡略化が図
れる。 【0019】温度を上げる場合は、nが3であるから第
一めっき槽1だけ、あるいは第一および第二めっき槽の
両方、さらには第一から第三めっき槽のすべてのいずれ
かであり、必ず温度が上がるめっき液が、めっき液自動
管理装置8により管理されるように構成されている。す
なわち、温度を上げるめっき槽には必ず第一のめっき槽
1を含め、めっき液自動管理装置8は第一めっき槽1に
隣接するように構成されている。 【0020】図2は、本発明の無電解めっき装置の第二
実施例を示した説明図である、図3は本発明の無電解め
っき装置の第三実施例を示した説明図である。第一実施
例との違いは、第二実施例では温度を上げるめっき槽が
第一めっき槽および第二めっき槽の両方であること、第
三実施例では温度を上げるめっき槽が第一から第三めっ
き槽であることにある。 【0021】めっき液の温度は、希望するめっき膜厚と
温度を上げる槽の長さと材料の搬送速度により決定され
る。めっき処理をしない槽の液温は室温とする。この状
態で無電解めっきを行なうことにより、温度を上げため
っき槽でのみ、めっきを析出させることができ、温度を
上げない槽ではめっき反応が起こらず、しかしめっき液
を循環させていることから材料の乾燥を防ぐことができ
る。材料の乾燥を防ぐ理由は、めっき膜の上に他のめっ
き膜を施すような場合、膜表面が酸化して不活性化する
ことを防ぐためである。 【0022】1台のめっき槽と一台のポンプを1組とし
て複数組用意し、全体を1つのリザーバタンク9に接続
させ、温度を上げるめっき槽と温度を上げないめっき槽
とが具備できることで、リールtoリール方式における
無電解めっき工程において、めっき槽の槽長を変えるこ
となくめっき時間を制御することができる。つまり、め
っき液温は最適温度のままで、任意のめっき膜厚の無電
解めっき処理をすることが可能となる。 【0023】以下、第一から第三実施例の結果について
述べる。銅合金リードフレーム材に無電解Ni−Pめっ
き膜を施した。めっき槽内の槽長の合計、および材料の
搬送速度は、従来の1槽型無電解めっき装置で膜厚6μ
mが得られた場合と同じにした。すなわち、1槽分めっ
きすれば2μm、2槽分めっきすれば4μm、3槽分め
っきすれば6μmとなる。 【0024】第一実施例では、第一めっき槽1のNiめ
っき液温を90℃、第二めっき槽2および第三めっき槽
3のめっき液温は室温(25℃)とし、めっき膜厚2μ
mを目標でめっきを施した。第二実施例では、第一めっ
き槽1および第二めっき槽2のめっき液温を90℃、第
三めっき槽3の液温を25℃とし、4μm目標でめっき
を行なった。第三実施例では、第一から第三めっき槽の
液温すべてを90℃とし、6μm目標でめっきを施し
た。結果を表1に示す。 【0025】 【表1】 【0026】表1内で第一従来例は、めっき槽の総全長
が本発明の第一から第三次実施例で示した無電解めっき
装置の槽長と同じにした1槽型無電解めっき装置におい
て、目標めっき膜厚を2μmにするため、めっき液温を
73℃とした場合である。第二従来例は目標めっき膜厚
を4μmにするため、めっき液温を84℃とした場合で
ある。参考例は、上記の1槽型めっき装置において、め
っき液温を90℃とした場合である。 【0027】第一から第三実施例では、いずれも目標値
通りのめっき膜厚が得られていることが分かる。一方、
第一従来例および第二従来例の結果を見て分るように、
1槽型めっき装置の場合、温度を制御することでほぼ目
標値どおりの膜厚が得られているが、P含有量が大きく
異なっている。このことから、本発明の無電解めっき装
置はめっき膜厚を精度良く制御でき、且つP含有量の少
ない膜質のめっき膜を得ることができた。 【0028】なお、第一から第三実施例では、簡単のた
め槽数を3(n=3)としたが、n数をさらに増加させ
ることで、任意の膜厚をさらに精度良く得ることが可能
である。また、Niめっき槽に適用した例を述べたが、
Auめっきの膜厚のコントロール方法としても、本発明
の装置は有用である。 【0029】 【発明の効果】本発明の、無電解めっき装置は1台のめ
っき槽と一台のポンプを1組としてn組用意し、全体を
1つのリザーバタンクに接続させて、リーザーバタンク
を取り外し可能な遮蔽板により分割し、液温を上げるめ
っき槽と液温を上げないめっき槽とを具備したことで次
の効果を発揮する。 【0030】(1)めっき槽の全長、めっき液温を変え
ることなく、任意のめっき膜厚が得られる。 【0031】(2)膜表面が不活性化する原因であるめ
っき膜表面の乾燥を防ぐ。 【0032】(3)どんな膜厚のめっき膜を作製した場
合でも、めっき膜の特性は従来装置で得られるものと同
等かそれ以上である。 【0033】(4)めっき液の液中組成、pH、Ni濃
度、還元剤濃度、温度を自動管理するめっき液自動管理
装置は1組で良い。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electroless plating apparatus capable of arbitrarily controlling a plating film thickness. 2. Description of the Related Art Many device manufacturers are actively developing packages using a tape carrier as a substrate. In recent years, with the progress of miniaturization and high density of packages, the wiring processing pitch of TAB tape carriers has been increasingly miniaturized. For this reason, it has become difficult to make all the patterns conductive for performing electrolytic plating on the tape carrier and to cut off the conductive leads in the final step. Therefore, establishment of an electroless plating technique that does not require conductive wiring is desired. [0003] There are various requirements for the film thickness in the plating process, and the plating apparatus must be able to cope with the change in the film thickness. For example, when performing bonding to a gold (Au) / nickel (Ni) plating film, the tape material itself is soft in gold wire bonding performed to a TAB tape carrier, so a hard nickel (Ni) base film of 5 μm or more is required. In gang bonding, gold (Au) needs to have a certain thickness, but it is better that the Ni base film is thin. [0004] In electrolytic plating, plating is formed with a film thickness proportional to the current density. Therefore, the plating film thickness can be easily controlled by changing the current density. On the other hand, in electroless plating, the deposition rate changes depending on the temperature of the plating solution (plating solution temperature), so that the plating film thickness can be controlled by adjusting the plating solution temperature. For example, when phosphorus (P) is used as the reducing agent, the electroless Ni plating needs to be performed at a liquid temperature of about 90 ° C. This is because no chemical reaction occurs at 70 ° C. or lower, and plating does not precipitate. That is, in order to obtain a sound plating film by electroless plating, it is necessary to perform plating at a certain optimum temperature. FIG. 4 is an explanatory view of a conventional electroless plating apparatus. 21 is a material delivery device, 23 is a pretreatment tank, 24 is a Ni-P plating tank, 25 is an Au plating tank, 26 is a post-treatment tank, and 22 is a material winding device. The plating method using this apparatus is called a reel-to-reel method. The material to be plated, such as a tape carrier, is delivered from a material delivery device 21 and is subjected to a pre-plating process in a pretreatment tank 23. Then, a predetermined plating film is applied through the Ni-P plating tank 24 and the Au plating tank 25. After that, it passes through a post-treatment tank 26, and is subjected to a drying process and the like. [0007] In order to obtain a Ni-P plating film having a uniform thickness, it is necessary to keep the temperature of the plating solution constant at 90 ° C.
Then, it is necessary to perform plating treatment in each plating tank for a time set in proportion to the film thickness so that a predetermined film thickness is obtained. Therefore, depending on the material delivery speed,
In order to obtain a predetermined film thickness, the material must be immersed in the plating bath at a constant temperature for a necessary time, and the length of a specific plating bath must be set so that the material is immersed in the plating bath for a necessary time. is necessary. [0008] The conventional electroless plating apparatus has the following problems. As described above, the control of the plating film thickness in electroless plating is performed by the plating solution temperature. In the case of plating that emphasizes the characteristics of the resulting plating film, the plating layer is divided into several layers, and the temperature of the solution is raised only in the plating tank that causes the plating reaction. Therefore, it is necessary to circulate the liquid and control the film thickness. However, in this method, since the plating solution in each tank is completely divided, a device for controlling the pH, Ni concentration, reducing agent concentration, temperature, etc. of the plating solution is required for each tank. Reasonably, the apparatus is complicated and expensive, and is not practical. Accordingly, an object of the present invention is to solve the above-mentioned drawbacks of the prior art and to obtain an arbitrary plating film thickness without changing the temperature of the plating solution and the length of the plating bath.
It is to provide a simple and low-cost electroless plating apparatus. In order to achieve the above object, the present invention provides a plating tank, a reservoir tank for storing a plating solution, and a step of transferring the plating solution from the reservoir tank to the plating tank. In the electroless plating apparatus including a circulating pump, the plating bath is configured such that the plating solution is heated and
A plurality of tanks that are kept warm and tanks where the plating solution is not heated
And the reservoir tank is
A plating solution that is heated and kept warm and a plating solution that is not heated
Electroless configuration separated by removable shield
A plating apparatus is provided. FIG. 1 is an explanatory view showing a first embodiment of an electroless plating apparatus according to the present invention. 1 is a first plating tank, 2 is a second plating tank, 3 is a third plating tank, 4 is a first pump, 5 is a second pump, 6 is a third pump, 7 is a removable shielding plate, and 8 is plating An automatic liquid management device, 9 is a reservoir tank, 10 is a heating / heating plating solution, 11 is a non-heating plating solution, and an arrow penetrating the first plating tank 1, the second plating tank 2, and the third plating tank 3. Indicates a transport direction of a material such as a carrier tape material. The arrows on each pump and each plating tank indicate the flow of the plating solution. As described above, a problem of the conventional plating apparatus is that the material must be bathed in the plating tank at a constant optimum solution temperature and for a plating time corresponding to a desired film thickness. Was. Therefore, a plurality of sets (n sets: n is an integer) were prepared with one plating tank and one pump as one set, and the whole was connected to one reservoir tank 9. In the first embodiment shown in FIG. 1, n is set to 3, and the reservoir tank 9 is divided into two portions so as to reserve the heating / heating plating solution 10 and the non-heating plating solution 11.
It was divided by a removable shielding plate 7. In this state, the heating / warming plating solution 10 is circulated from the first pump 4 to the first plating tank 1. The unheated plating solution 11 is circulated through the second plating tank 2 and the third plating tank 3 by the second pump 5 and the third pump 6. By doing so, it can be divided into a plating tank in which the plating reaction proceeds and a plating tank in which the plating reaction is not performed. Unlike the case of the electroless plating apparatus in which the reservoir tank 9 is completely divided into n tanks, the plating solution automatic management device 8 for managing the composition, pH, and temperature of the components in the plating solution includes one set in the reservoir tank 9. Just install it. Therefore, cost reduction and simplification of the device can be achieved. When the temperature is to be increased, since n is 3, either the first plating tank 1 or both the first and second plating tanks, and all of the first to third plating tanks, The plating solution whose temperature always rises is controlled by the plating solution automatic management device 8. That is, the plating bath for raising the temperature always includes the first plating bath 1 and the plating solution automatic management device 8 is configured to be adjacent to the first plating bath 1. FIG. 2 is an explanatory view showing a second embodiment of the electroless plating apparatus of the present invention, and FIG. 3 is an explanatory view showing a third embodiment of the electroless plating apparatus of the present invention. The difference from the first embodiment is that in the second embodiment, the plating bath for raising the temperature is both the first plating bath and the second plating bath, and in the third embodiment, the plating bath for raising the temperature is from the first to the second. It is a three plating tank. The temperature of the plating solution is determined by the desired plating film thickness, the length of the tank for raising the temperature, and the material conveying speed. The temperature of the bath in which the plating is not performed is room temperature. By performing electroless plating in this state, plating can be deposited only in the plating bath where the temperature is raised, and no plating reaction occurs in the bath where the temperature is not raised, but the plating solution is circulated. Drying of the material can be prevented. The reason why the material is prevented from drying is to prevent the surface of the film from being oxidized and inactivated when another plating film is applied on the plating film. A plurality of sets of one plating tank and one pump are prepared as one set, and the whole is connected to one reservoir tank 9 so that a plating tank for raising the temperature and a plating tank for not raising the temperature can be provided. In the electroless plating process in the reel-to-reel system, the plating time can be controlled without changing the length of the plating tank. That is, it is possible to perform electroless plating with an arbitrary plating film thickness while keeping the plating solution temperature at the optimum temperature. Hereinafter, the results of the first to third embodiments will be described. An electroless Ni-P plating film was applied to a copper alloy lead frame material. The total length of the plating tank and the material transfer speed are 6 μm in the thickness of the conventional one-tank type electroless plating equipment.
The same as when m was obtained. That is, the thickness is 2 μm if plating in one tank, 4 μm if plating in two tanks, and 6 μm if plating in three tanks. In the first embodiment, the temperature of the Ni plating solution in the first plating tank 1 is 90 ° C., the temperature of the plating solution in the second plating tank 2 and the third plating tank 3 is room temperature (25 ° C.), and the plating film thickness is 2 μm.
The plating was performed with a target of m. In the second embodiment, the plating temperature of the first plating tank 1 and the second plating tank 2 was 90 ° C., the liquid temperature of the third plating tank 3 was 25 ° C., and plating was performed with a target of 4 μm. In the third embodiment, plating was performed at a target of 6 μm, with all the liquid temperatures in the first to third plating tanks being 90 ° C. Table 1 shows the results. [Table 1] In Table 1, the first conventional example is a single-tank type electroless plating in which the total length of the plating tank is the same as the tank length of the electroless plating apparatus shown in the first to third embodiments of the present invention. In this apparatus, the plating solution temperature was set to 73 ° C. in order to set the target plating film thickness to 2 μm. In the second conventional example, the plating solution temperature is set to 84 ° C. in order to set the target plating film thickness to 4 μm. The reference example is a case in which the plating solution temperature is 90 ° C. in the above-described one-tank type plating apparatus. In each of the first to third embodiments, it can be seen that the plating film thickness is in accordance with the target value. on the other hand,
As can be seen from the results of the first conventional example and the second conventional example,
In the case of the single-tank type plating apparatus, a film thickness almost as expected was obtained by controlling the temperature, but the P content was greatly different. From this, the electroless plating apparatus of the present invention was able to accurately control the plating film thickness and obtain a plating film with a low P content. In the first to third embodiments, the number of tanks is set to 3 (n = 3) for simplicity. However, by further increasing the number of n, an arbitrary film thickness can be obtained with higher accuracy. It is possible. In addition, although the example applied to the Ni plating tank was described,
The apparatus of the present invention is also useful as a method for controlling the thickness of Au plating. According to the electroless plating apparatus of the present invention, n sets of one plating tank and one pump are prepared as one set, and the whole is connected to one reservoir tank. Is divided by a removable shielding plate, and the following effects are exhibited by providing a plating tank for increasing the solution temperature and a plating tank for not increasing the solution temperature. (1) An arbitrary plating film thickness can be obtained without changing the total length of the plating tank and the plating solution temperature. (2) Drying of the plating film surface, which causes inactivation of the film surface, is prevented. (3) Regardless of the thickness of the plated film produced, the characteristics of the plated film are equal to or better than those obtained by the conventional apparatus. (4) One set of a plating solution automatic management device for automatically managing the composition, pH, Ni concentration, reducing agent concentration and temperature of the plating solution is sufficient.

【図面の簡単な説明】 【図1】本発明の無電解めっき装置の第一実施例を示し
た説明図である。 【図2】本発明の無電解めっき装置の第二実施例を示し
た説明図である。 【図3】本発明の無電解めっき装置の第三実施例を示し
た説明図である。 【図4】従来の無電解めっき装置の説明図である。 【符号の説明】 1 第一めっき槽 2 第二めっき槽 3 第三めっき槽 4 第一ポンプ 5 第二ポンプ 6 第三ポンプ 7 遮蔽板 8 めっき液自動管理装置 9 リザーバタンク 10 加熱・保温めっき液 11 非加熱めっき液 21 材料送出装置 22 材料巻取装置 23 前処理槽 24 Ni−Pめっき槽 25 Auめっき槽 26 後処理槽
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an explanatory view showing a first embodiment of an electroless plating apparatus according to the present invention. FIG. 2 is an explanatory view showing a second embodiment of the electroless plating apparatus of the present invention. FIG. 3 is an explanatory view showing a third embodiment of the electroless plating apparatus of the present invention. FIG. 4 is an explanatory view of a conventional electroless plating apparatus. [Description of Signs] 1 First plating tank 2 Second plating tank 3 Third plating tank 4 First pump 5 Second pump 6 Third pump 7 Shielding plate 8 Automatic plating solution management device 9 Reservoir tank 10 Heating / heating plating solution 11 Non-heating plating solution 21 Material delivery device 22 Material take-up device 23 Pretreatment tank 24 Ni-P plating tank 25 Au plating tank 26 Post-treatment tank

フロントページの続き (56)参考文献 特開 昭61−15979(JP,A) 特開 平6−88246(JP,A) 特開 昭57−140870(JP,A) 特開 平11−323566(JP,A) (58)調査した分野(Int.Cl.7,DB名) C23C 18/31 Continuation of the front page (56) References JP-A-61-15979 (JP, A) JP-A-6-88246 (JP, A) JP-A-57-140870 (JP, A) JP-A-11-323566 (JP, A) , A) (58) Field surveyed (Int. Cl. 7 , DB name) C23C 18/31

Claims (1)

(57)【特許請求の範囲】 【請求項1】めっき槽と、めっき液を貯蔵しておくリザ
ーバタンクと、該リザーバタンクから前記めっき槽に前
記めっき液を循環させるポンプとから成る無電解めっき
装置において、前記めっき槽は、前記めっき液が加熱・
保温される槽と、前記めっき液が加熱されない槽の複数
の槽に分割して成ると共に、 前記リザーバタンクは、加熱・保温されるめっき液と加
熱されないめっき液とを、取り外し可能な遮蔽板により
分離した構成であることを 特徴とする無電解めっき装
置。
(57) [Claim 1] Electroless plating comprising a plating tank, a reservoir tank for storing a plating solution, and a pump for circulating the plating solution from the reservoir tank to the plating tank. In the apparatus, the plating bath is heated and heated by the plating solution.
A plurality of tanks that are kept warm and tanks where the plating solution is not heated
And the reservoir tank is provided with a plating solution to be heated and kept warm.
Unheated plating solution with removable shield
An electroless plating apparatus having a separate configuration .
JP16078698A 1998-06-09 1998-06-09 Electroless plating equipment Expired - Fee Related JP3368828B2 (en)

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Application Number Priority Date Filing Date Title
JP16078698A JP3368828B2 (en) 1998-06-09 1998-06-09 Electroless plating equipment

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Publication Number Publication Date
JPH11350148A JPH11350148A (en) 1999-12-21
JP3368828B2 true JP3368828B2 (en) 2003-01-20

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Country Link
JP (1) JP3368828B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101087633B1 (en) * 2002-11-15 2011-11-30 가부시키가이샤 에바라 세이사꾸쇼 Substrate processing apparatus and substrate processing method
CN116288607A (en) * 2021-12-21 2023-06-23 盛美半导体设备(上海)股份有限公司 Liquid storage device and electroplating equipment

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