JP3366932B2 - Contact bump and its manufacturing method - Google Patents

Contact bump and its manufacturing method

Info

Publication number
JP3366932B2
JP3366932B2 JP03201196A JP3201196A JP3366932B2 JP 3366932 B2 JP3366932 B2 JP 3366932B2 JP 03201196 A JP03201196 A JP 03201196A JP 3201196 A JP3201196 A JP 3201196A JP 3366932 B2 JP3366932 B2 JP 3366932B2
Authority
JP
Japan
Prior art keywords
metal material
wire
wiring pattern
contact bump
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP03201196A
Other languages
Japanese (ja)
Other versions
JPH09232730A (en
Inventor
河合　　徹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Aviation Electronics Industry Ltd
Original Assignee
Japan Aviation Electronics Industry Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Aviation Electronics Industry Ltd filed Critical Japan Aviation Electronics Industry Ltd
Priority to JP03201196A priority Critical patent/JP3366932B2/en
Publication of JPH09232730A publication Critical patent/JPH09232730A/en
Application granted granted Critical
Publication of JP3366932B2 publication Critical patent/JP3366932B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4007—Surface contacts, e.g. bumps

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

PROBLEM TO BE SOLVED: To reduce the working time to improve the productivity by simplifying the production process. SOLUTION: A first low-m.p. metal material 12 is disposed a little on a wiring pattern 3, wire 13 made of a second metal material having a higher m.p. than that of the first material 12 is disposed like a half loop to cover the first material 12, the pattern 3, first material 12 and wire 13 are heated to melt only the first material 12 enough to fill a region surrounded with the wire 3 and pattern 3 and then cooled to form a contact bump. The wire bonding technique is applicable to the disposition of the metal material 12 and wire 13.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】この発明は接点バンプとその
製法に関し、特に生産性の向上に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a contact bump and a method for manufacturing the same, and more particularly to improving productivity.

【０００２】[0002]

【従来の技術】従来の接点バンプ１は図３に示すように
基板（リッジッドまたはフレシキブル）の配線パターン
３上に形成され、図４に示すように他の配線部材４の配
線パターン４ｂと接触させ、電気的導通がとられる。こ
のような接点バンプは例えばコネクタなどに使用され
る。2. Description of the Related Art A conventional contact bump 1 is formed on a wiring pattern 3 of a substrate (ridged or flexible) as shown in FIG. 3 and is brought into contact with a wiring pattern 4b of another wiring member 4 as shown in FIG. , Electrical continuity is established. Such contact bumps are used, for example, in connectors.

【０００３】従来の接点バンプ１の製法は、フォトリソ
グラフィ技術とメッキ技術を応用したものであり、図５
を参照して工程順に説明する。 （Ａ）基板の配線パターン３上に感光性レジスト５を塗
布する。 （Ｂ）配線パターン３上のバンプ形成領域６のみに光７
が当たるように、ガラス基板９ａ上に領域８を除いてク
ロム９ｂを蒸着させたマスク９を準備しておく。そのマ
スク９を感光性レジスト５を塗布した基板２上に位置決
めして配設し、感光性レジスト５を露光する。The conventional method of manufacturing the contact bumps 1 is to apply photolithography technology and plating technology.
Will be described in order of steps. (A) A photosensitive resist 5 is applied on the wiring pattern 3 of the substrate. (B) Light 7 is applied only to the bump formation region 6 on the wiring pattern 3.
A mask 9 is prepared by vapor-depositing chromium 9b on the glass substrate 9a except for the region 8 so that the mask 9 will hit. The mask 9 is positioned and disposed on the substrate 2 coated with the photosensitive resist 5, and the photosensitive resist 5 is exposed.

【０００４】（Ｃ）基板２を溶剤にひたして、感光性レ
ジスト５の光の当たった部分を溶解、除去する。 （Ｄ）メッキ技術を応用して、配線パターン３上の感光
性レジスト５の除去された領域８に接点バンプ１を形成
する。 （Ｅ）基板２を溶剤にひたして、感光性レジスト５を全
て溶解、除去する。(C) The substrate 2 is immersed in a solvent to dissolve and remove the light-exposed portion of the photosensitive resist 5. (D) Applying the plating technique, the contact bump 1 is formed on the region 8 of the wiring pattern 3 where the photosensitive resist 5 has been removed. (E) The substrate 2 is immersed in a solvent to dissolve and remove all the photosensitive resist 5.

【０００５】[0005]

【発明が解決しようとする課題】上記説明から分かるよ
うに、従来の接点バンプの製法は工程数が多く、作業時
間が長くなり、生産性が悪い欠点があった。この発明の
目的は、これら従来の欠点を解決し、製造工程を簡単化
して、作業時間を短縮し、生産性を向上させようとする
ものである。As can be seen from the above description, the conventional contact bump manufacturing method has a number of steps, a long working time, and poor productivity. An object of the present invention is to solve these conventional drawbacks, simplify the manufacturing process, shorten the working time, and improve the productivity.

【０００６】[0006]

【課題を解決するための手段】[Means for Solving the Problems]

（１）請求項１の接点バンプの製法は、配線パターン上
に低融点の少量の第１金属材料を配設する第１工程と、
第１金属材料より融点の高い第２金属材料より成るワイ
ヤを、配線パターン上に配された第１金属材料の上を覆
うように、半ループ状に配設する第２工程と、配線パタ
ーンと、その上に配された第１金属材料及びワイヤとを
加熱し、第１金属材料のみを溶解させ、そのぬれ性によ
ってワイヤと配線パターンとで囲まれた領域内に充満さ
せた後、冷却させる第３工程とより成るものである。(1) The method for manufacturing contact bumps according to claim 1 comprises a first step of disposing a small amount of a low melting point first metal material on a wiring pattern,
A second step of arranging a wire made of a second metal material having a melting point higher than that of the first metal material in a half loop so as to cover the first metal material arranged on the wiring pattern; , Heating the first metal material and the wire arranged thereon to melt only the first metal material, and fill the region surrounded by the wire and the wiring pattern by its wettability, and then cool it. It comprises a third step.

【０００７】（２）請求項２の発明は、前記（１）にお
いて、第１工程が第１金属材料より成るワイヤの一端を
配線パターン上にボンディングすると共に、そのボンデ
ィングされた一端の近傍を切断する工程を含むものであ
る。 （３）請求項３の発明は、前記（１）において、第２工
程が第２金属材料より成るワイヤの一端を配線パターン
上の第１金属材料の一側にボンディングした後、半ルー
プ状に延長し、その延長端を切断する工程を含むもので
ある。(2) In the invention of claim 2, in the above-mentioned (1), in the first step, one end of the wire made of the first metal material is bonded to the wiring pattern, and the vicinity of the bonded one end is cut. It includes a step of performing. (3) In the invention of claim 3, in the above-mentioned (1), after the second step of bonding one end of the wire made of the second metal material to one side of the first metal material on the wiring pattern, a half-loop shape is formed. It includes the steps of extending and cutting the extended end.

【０００８】（４）請求項４の発明は、前記（１）にお
いて、第２工程が第２金属材料より成るワイヤを配線パ
ターン上の第１金属材料の両側にボンディングする工程
を含むものである。 （５）請求項５の接点バンプは、配線パターン上に半ル
ープ状の金属ワイヤが上に凸に配設され、その金属ワイ
ヤと配線パターンとで囲まれた領域に、金属ワイヤより
低融点の金属材料が充満されているものである。(4) According to the invention of claim 4, in the above (1), the second step includes a step of bonding a wire made of a second metal material to both sides of the first metal material on the wiring pattern. (5) In the contact bump according to claim 5, a semi-loop-shaped metal wire is provided on the wiring pattern so as to be convex upward, and the region surrounded by the metal wire and the wiring pattern has a lower melting point than the metal wire. It is filled with a metallic material.

【０００９】（６）請求項６の発明は、前記（５）にお
いて、金属ワイヤの少なくとも一端が配線パターン上に
ボンディングされているものである。(6) According to the invention of claim 6, in the above item (5), at least one end of the metal wire is bonded onto the wiring pattern.

【００１０】[0010]

【発明の実施の形態】図１及び図２の実施例を参照し
て、発明の実施の形態を工程順に説明する。 （Ａ）第１工程：基板２の配線パターン３上に低融点の
少量の第１金属材料１２を配設する。 （Ｂ）第２工程：第１金属材料１２より融点の高い第２
金属材料より成るワイヤ１３を第１金属材料１２の上を
覆うように、半ループ状に配設する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in the order of steps with reference to the examples of FIGS. (A) First step: A small amount of the first metal material 12 having a low melting point is provided on the wiring pattern 3 of the substrate 2. (B) Second step: second step having a higher melting point than the first metal material 12
The wire 13 made of a metal material is arranged in a half loop so as to cover the first metal material 12.

【００１１】（Ｃ）第３工程：配線パターン３とその上
に配された第１金属材料１２及びワイヤ１３を加熱し、
第１金属材料１２のみを溶融させ、そのぬれ性によって
ワイヤ１３と配線パターン３とで囲まれた領域内に充満
させた後、冷却させて接点バンプを形成する。ワイヤ１
３内が第１金属材料１２で満たされているので、他の配
線部材と接触させる際の押圧力を支えることができる。
前記の第１工程において、第１金属材料より成るワイ
ヤの一端を配線パターン３上にボンディングすると共
に、そのボンディングされた一端の近傍を切断すること
によって、少量の第１金属材料１２を短時間で確実に配
線パターン３上に配設することができる（請求項２）。(C) Third step: heating the wiring pattern 3, the first metal material 12 and the wire 13 arranged thereon,
Only the first metal material 12 is melted, the wettability thereof is filled in the region surrounded by the wire 13 and the wiring pattern 3, and then cooled to form the contact bump. Wire 1
Since the inside of 3 is filled with the first metal material 12, the pressing force at the time of contacting with another wiring member can be supported.
In the first step, by bonding one end of the wire made of the first metal material onto the wiring pattern 3 and cutting the vicinity of the bonded one end, a small amount of the first metal material 12 can be formed in a short time. It can be reliably arranged on the wiring pattern 3 (claim 2).

【００１２】前記の第２工程において、第２金属材料よ
り成るワイヤ１３の一端を配線パターン３上の第１金属
材料の一側にボンディングした後、半ループ状に延長
し、その延長端を切断する方法を用いることができる
（請求項３）。この方法はワイヤボンディングの技術を
応用したもので生産性に優れている。また他の方法とし
て、ワイヤ１３を第１金属材料１２の両側でボンディン
グすることもできる（請求項４）。この方法も上記と同
様の効果が得られる。In the second step, one end of the wire 13 made of the second metal material is bonded to one side of the first metal material on the wiring pattern 3, then extended in a half loop shape, and the extended end is cut. The method can be used (claim 3). This method is an application of wire bonding technology and has excellent productivity. Alternatively, the wire 13 may be bonded on both sides of the first metal material 12 (claim 4). This method also has the same effect as above.

【００１３】[0013]

【発明の効果】以上述べたようにこの発明の接点バンプ
は、工程数が少なく、かつ簡単な工程で作製できるの
で、作業時間を短縮し、生産性を向上できる。特に、第
１金属材料１２またはワイヤ１３の配設にワイヤボンデ
ィングの技術を応用した場合にはその効果はいっそう顕
著である。As described above, since the contact bump of the present invention has a small number of steps and can be manufactured by a simple step, the working time can be shortened and the productivity can be improved. Particularly, when the wire bonding technique is applied to the disposition of the first metal material 12 or the wire 13, the effect is more remarkable.

【図面の簡単な説明】[Brief description of drawings]

【図１】この発明の接点バンプの製造工程を示す原理的
な断面図。FIG. 1 is a principle sectional view showing a manufacturing process of a contact bump of the present invention.

【図２】Ａはこの発明の接点バンプの形成された基板２
の斜視図、Ｂ及びＣはそれぞれＡの接点バンプ１の側面
図及び正面図。FIG. 2A is a substrate 2 on which contact bumps of the present invention are formed.
Is a perspective view, and B and C are a side view and a front view of the contact bump 1 of A, respectively.

【図３】Ａは従来の接点バンプを形成した基板の斜視
図、ＢはＡの接点バンプ１の正面図。3A is a perspective view of a substrate on which a conventional contact bump is formed, and B is a front view of the contact bump 1 of FIG.

【図４】図３の接点バンプを他の配線部材に接触させた
状態を示す正面図。FIG. 4 is a front view showing a state where the contact bump of FIG. 3 is brought into contact with another wiring member.

【図５】従来の接点バンプの製造工程を示す原理的な断
面図。FIG. 5 is a principle cross-sectional view showing a manufacturing process of a conventional contact bump.

Claims (6)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 配線パターン上に低融点の少量の第１金
属材料を配設する第１工程と、 前記第１金属材料より融点の高い第２金属材料より成る
ワイヤを、前記配線パターン上に配された前記第１金属
材料の上を覆うように、半ループ状に配設する第２工程
と、 前記配線パターンと、その上に配された前記第１金属材
料及び前記ワイヤとを加熱し、前記第１金属材料のみを
溶解させ、そのぬれ性によって前記ワイヤと前記配線パ
ターンとで囲まれた領域内に充満させた後、冷却させる
第３工程と、 より成ることを特徴とする接点バンプの製法。1. A first step of disposing a small amount of a first metal material having a low melting point on a wiring pattern, and a wire made of a second metal material having a melting point higher than that of the first metal material, on the wiring pattern. A second step of arranging in a semi-loop shape so as to cover the arranged first metal material, the wiring pattern, and the first metal material and the wire arranged thereon are heated. A third step of melting only the first metal material, filling the region surrounded by the wire and the wiring pattern by its wettability, and then cooling the contact bump. Manufacturing method. 【請求項２】 請求項１において、前記第１工程が前記
第１金属材料より成るワイヤの一端を前記配線パターン
上にボンディングすると共に、そのボンディングされた
前記一端の近傍を切断する工程を含むことを特徴とする
接点バンプの製法。2. The method according to claim 1, wherein the first step includes a step of bonding one end of the wire made of the first metal material onto the wiring pattern, and cutting the vicinity of the bonded one end. A method of manufacturing contact bumps characterized by. 【請求項３】 請求項１において、前記第２工程が前記
第２金属材料より成るワイヤの一端を前記配線パターン
上の前記第１金属材料の一側にボンディングした後、前
記半ループ状に延長し、その延長端を切断する工程を含
むことを特徴とする接点バンプの製法。3. The method according to claim 1, wherein, in the second step, one end of the wire made of the second metal material is bonded to one side of the first metal material on the wiring pattern and then extended in the half-loop shape. And a step of cutting the extended end of the contact bump. 【請求項４】 請求項１において、前記第２工程が前記
第２金属材料より成るワイヤを前記配線パターン上の前
記第１金属材料の両側にボンディングする工程を含むこ
とを特徴とする接点バンプの製法。4. The contact bump according to claim 1, wherein the second step includes a step of bonding a wire made of the second metal material to both sides of the first metal material on the wiring pattern. Manufacturing method. 【請求項５】 配線パターン上に半ループ状の金属ワイ
ヤが上に凸に配設され、その金属ワイヤと配線パターン
とで囲まれた領域に、前記金属ワイヤより低融点の金属
材料が充満されていることを特徴とする接点バンプ。5. A semi-looped metal wire is provided on the wiring pattern so as to project upward, and a region surrounded by the metal wire and the wiring pattern is filled with a metal material having a melting point lower than that of the metal wire. Contact bumps that are characterized by 【請求項６】 請求項５において、前記金属ワイヤの少
なくとも一端が前記配線パターン上にボンディングされ
ていることを特徴とする接点バンプ。6. The contact bump according to claim 5, wherein at least one end of the metal wire is bonded on the wiring pattern.
JP03201196A 1996-02-20 1996-02-20 Contact bump and its manufacturing method Expired - Fee Related JP3366932B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03201196A JP3366932B2 (en) 1996-02-20 1996-02-20 Contact bump and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03201196A JP3366932B2 (en) 1996-02-20 1996-02-20 Contact bump and its manufacturing method

Publications (2)

Publication Number Publication Date
JPH09232730A JPH09232730A (en) 1997-09-05
JP3366932B2 true JP3366932B2 (en) 2003-01-14

Family

ID=12346936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03201196A Expired - Fee Related JP3366932B2 (en) 1996-02-20 1996-02-20 Contact bump and its manufacturing method

Country Status (1)

Country Link
JP (1) JP3366932B2 (en)

Also Published As

Publication number Publication date
JPH09232730A (en) 1997-09-05

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