JP3366238B2 - Chromium film etching method - Google Patents
Chromium film etching methodInfo
- Publication number
- JP3366238B2 JP3366238B2 JP29436597A JP29436597A JP3366238B2 JP 3366238 B2 JP3366238 B2 JP 3366238B2 JP 29436597 A JP29436597 A JP 29436597A JP 29436597 A JP29436597 A JP 29436597A JP 3366238 B2 JP3366238 B2 JP 3366238B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- chromium film
- nitric acid
- etching solution
- chromium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Description
【０００１】[0001]
【発明の属する技術分野】 本発明は、クロム膜のエッ
チング方法に関し、特に半導体装置、カラー液晶素子装
置、プラズマデイスプレイパネルの回路素子などを製造
する際に使用されるクロム膜のエッチング方法に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for etching a chromium film, and more particularly to a method for etching a chromium film used in manufacturing a semiconductor device, a color liquid crystal element device, a circuit element of a plasma display panel and the like. is there.
【０００２】[0002]
【従来の技術】 従来、クロム膜のエッチング方法とし
ては、硝酸第２セリウムアンモニウム（以降、硝セリ安
と記す）と過硫酸アンモニウムを含むエッチング液でエ
ッチングする方法が知られているが、エッチング液の加
水分解によってエッチング液中に白色沈殿が生じやす
く、液寿命が短く、またクロム膜回路のエッチング形状
が安定しない問題があった。エッチング液中に生成する
白色沈殿はエッチング面に付着し、微細なエッチング残
渣の原因となる。上記エッチング方法の改良技術とし
て、次のようなものが知られている。特公昭６３−４７
１３９号公報には、硝酸第２セリウムアンモニウム（以
降、硝セリ安と記す）１００〜１６０ｇ、過塩素酸４０
〜１００ｃｃ、純水１０００ｃｃの割合の水溶液を用い
たクロム膜のエッチング方法が開示されている。特公平
７−７７５７号公報には、硝酸を２モル／リットル（約
１１．８重量％）以上と硝セリ安を含むエッチング液に
てエッチングするクロム膜のパターニング方法が開示さ
れている。2. Description of the Related Art Conventionally, as a method of etching a chromium film, a method of etching with an etching solution containing cerium ammonium nitrate (hereinafter referred to as ammonium nitrate) and ammonium persulfate is known. Due to hydrolysis, white precipitates are likely to occur in the etching solution, the life of the solution is short, and the etching shape of the chromium film circuit is not stable. The white precipitate generated in the etching solution adheres to the etching surface and causes fine etching residues. The following is known as a technique for improving the etching method. Japanese Patent Publication No. 63-47
In Japanese Patent No. 139, 100 to 160 g of ceric ammonium nitrate (hereinafter referred to as cerium nitrate) and 40 perchloric acid are disclosed.
A method of etching a chromium film using an aqueous solution having a ratio of ˜100 cc and 1000 cc of pure water is disclosed. Japanese Examined Patent Publication No. 7-7757 discloses a method for patterning a chromium film in which nitric acid is etched with an etching solution containing 2 mol / liter (about 11.8% by weight) or more and ammonium nitrate.
【０００３】また、特開平５−２７１９６７号公報に
は、水１リットルに硝酸第２セリウムアンモニウム１０
〜３００ｇと過塩素酸、硝酸、硫酸および酢酸からなる
群から選ばれる少なくとも一種の酸またはその塩と、パ
ーフルオロアルキルスルホン酸塩の界面活性剤を含有す
るエッチング液でクロム膜をエッチングする方法が開示
されている。Further, in JP-A-5-271967, 1 liter of water is mixed with 10 parts of ceric ammonium nitrate.
~ 300 g and at least one acid selected from the group consisting of perchloric acid, nitric acid, sulfuric acid and acetic acid or a salt thereof, and a method of etching a chromium film with an etching solution containing a surfactant of perfluoroalkyl sulfonate. It is disclosed.
【０００４】[0004]
【発明が解決しようとする課題】カラー液晶素子装置等
の回路素子に使用されるクロム膜回路側面形状は、多層
化しやすいようにテーパー形状（回路断面形状が台形の
回路側面が裾をひく形状）が必要とされるが、上記の特
公昭６３−４７１３９号公報に開示されたエッチング方
法は、エッチング液の劣化は抑制されるが、クロム膜回
路のサイドエッチングが大きく、回路のテーパーが得ら
れない問題がある。The side surface shape of a chrome film circuit used in a circuit element such as a color liquid crystal element device is a taper shape so that it is easy to be multi-layered (the cross-sectional shape of the circuit is trapezoidal, and the side surface of the circuit has a hem). In the etching method disclosed in Japanese Patent Publication No. 63-47139, the deterioration of the etching solution is suppressed, but the side etching of the chromium film circuit is large and the taper of the circuit cannot be obtained. There's a problem.
【０００５】特公平７−７７５７号公報に開示されたク
ロム膜のパターニング方法では硝酸によってクロム膜上
のエッチングフォトレジスト（以降、ＰＲという）を剥
離しながらエッチングし、クロム膜回路側面のテーパー
形状は得られるものの、エッチング液の硝酸濃度が高
く、クロム膜回路側面のテーパー形状のバラツキが大き
く、またサイドエッチングも大きい問題がある。In the method for patterning a chromium film disclosed in Japanese Patent Publication No. 7-7757, the etching photoresist (hereinafter referred to as PR) on the chromium film is peeled off and etched by nitric acid to form a tapered shape on the side surface of the chromium film. Although obtained, the nitric acid concentration of the etching solution is high, there are large variations in the tapered shape of the side surface of the chromium film circuit, and there is also a problem of large side etching.
【０００６】また、上記の特開平５−２７１９６７号公
報に開示されたクロム膜のエッチング方法では、界面活
性剤を添加してエッチング液の湿潤性の改善を図ってい
るが、本技術においてもクロム膜回路のテーパー形状の
安定化が十分でなく、またエッチング液が加水分解して
白色沈殿が生じやすく、エッチング液寿命が短い問題も
ある。Further, in the method for etching a chromium film disclosed in the above-mentioned Japanese Patent Laid-Open No. 5-271967, a surfactant is added to improve the wettability of the etching solution. There is also a problem that the taper shape of the membrane circuit is not sufficiently stabilized, the etching solution is easily hydrolyzed to cause white precipitation, and the life of the etching solution is short.
【０００７】本発明の目的は、上記の従来技術の問題点
を解決したクロム膜のエッチング方法を提供することに
ある。An object of the present invention is to provide a method for etching a chromium film, which solves the above problems of the prior art.
【０００８】[0008]
【課題を解決するための手段】本発明のクロム膜のエッ
チング方法は、フォトリソグラフィ法等によりクロム膜
上にエッチングフォトレジスト（ＰＲ）を形成する工程
と、前記レジスト膜マスクを温度５０〜１００℃の温水
に浸漬処理する工程と、硝酸系エッチング液に浸漬し、
前記レジスト膜マスク非被覆部のクロム膜をエッチング
する工程とから構成される。A method for etching a chromium film according to the present invention comprises a step of forming an etching photoresist (PR) on the chromium film by a photolithography method, and the resist film mask at a temperature of 50 to 100 ° C. Dipping process in hot water and dipping in nitric acid-based etching solution,
And a step of etching the chromium film on the resist film mask uncovered portion.
【０００９】本発明における前記硝酸系エッチング液と
しては、硝酸第２セリウムアンモニウムを１０〜２０重
量％、硝酸を５〜１０重量％含む水溶液がを使用するこ
とができる。As the nitric acid-based etching solution in the present invention, an aqueous solution containing 10 to 20% by weight of ceric ammonium nitrate and 5 to 10% by weight of nitric acid can be used.
【００１０】本発明の他のクロム膜のエッチング方法
は、フォトリソグラフィ法等によりクロム膜上にエッチ
ングフォトレジストを形成する工程と、前記レジスト膜
マスクを温度５０〜１００℃の温水に浸漬処理する工程
と、前記レジスト膜マスク非被覆部のクロム膜の所定の
厚さを硝酸系エッチング液を使用してウエットエッチン
グする工程と、前記ウエットエッチングして残った前記
レジスト膜マスク非被覆部のクロム膜を酸素系プラズマ
ガスを使用してドライエッチングする工程とから構成さ
れる。Another method of etching a chromium film of the present invention is a step of forming an etching photoresist on the chromium film by a photolithography method and a step of immersing the resist film mask in hot water at a temperature of 50 to 100 ° C. And a predetermined amount of the chromium film on the non-coated resist film mask .
Wet etching the thickness using a nitric acid-based etching solution, and the wet etching remaining
Composed of a dry etching Holdings Ru process a chromium film of the resist film mask uncoated portion using an oxygen-based plasma gas.
【００１１】本発明では、クロム膜のＰＲを温水処理す
ることが技術的に重要な意味を持っている。この温水処
理で、クロム膜とＰＲの密着性が低下し、エッチング液
中の硝酸濃度を５〜１０重量％の比較的低濃度で保持
し、エッチングによりクロム膜回路のテーパー形状が安
定化することを見いだした。また、本発明では、エッチ
ング液中の硝酸第２セリウムアンモニウムを１０〜２０
重量％、硝酸を５〜１０重量％に管理することにより、
エッチング液が安定化し、白色沈殿の生成が抑制できる
ことが判明した。In the present invention, it is technically important to treat the PR of the chromium film with hot water. By this hot water treatment, the adhesion between the chromium film and the PR is reduced, the nitric acid concentration in the etching solution is maintained at a relatively low concentration of 5 to 10% by weight, and the tapered shape of the chromium film circuit is stabilized by etching. I found it. Further, in the present invention, the amount of ceric ammonium nitrate in the etching solution is set to 10 to 20%.
By controlling the weight% and nitric acid to be 5 to 10% by weight,
It was found that the etching solution was stabilized and the formation of white precipitate could be suppressed.
【００１２】本発明では、前記のエッチング液によるウ
エットエッチング（等方性エッチング）と前記混合ガス
によるプラズマガスによるドライエッチング（異方性エ
ッチング）の併用により、エッチング液の長寿命化とク
ロム膜回路のテーパー形状の安定化形成ができる。In the present invention, the wet etching (isotropic etching) with the etching solution and the dry etching (anisotropic etching) with the plasma gas using the mixed gas are used together to prolong the life of the etching solution and the chromium film circuit. The taper shape can be stably formed.
【００１３】[0013]
【発明の実施の形態】次に、本発明の実施の形態につい
て詳細に説明する。BEST MODE FOR CARRYING OUT THE INVENTION Next, embodiments of the present invention will be described in detail.
【００１４】図１は、本発明の第１の実施の形態のクロ
ム膜のエッチング方法を説明するための処理工程図であ
る。FIG. 1 is a process step diagram for explaining a chromium film etching method according to a first embodiment of the present invention.
【００１５】図中の符号Ｓ１〜Ｓ５は各処理工程を示
す。まず、セラミックのような絶縁基板上にスパッタリ
ング等で形成した厚さ１４０ｎｍのクロム膜上にエッチ
ングフォトレジスト（ＰＲ）を塗布する（Ｓ１）。この
エッチングフォトレジストとしては、フェノールノボラ
ック樹脂を主鎖とするエッチングフォトレジストを使用
できる。Reference numerals S1 to S5 in the drawing indicate respective processing steps. First, an etching photoresist (PR) is applied to a 140 nm-thick chromium film formed by sputtering or the like on an insulating substrate such as ceramic (S1). As this etching photoresist, an etching photoresist having a phenol novolac resin as a main chain can be used.
【００１６】次に、フォトリソグラフィ法を用いて露光
（Ｓ２）、現像（Ｓ３）を行い、前記クロム膜上に、幅
１〜５ｎｍのＰＲのパターニングを行う。この場合のプ
リベーク、ポストべーク温度は、共に１２０℃とする。Next, photolithography is used to perform exposure (S2) and development (S3) to perform patterning of PR having a width of 1 to 5 nm on the chromium film. The pre-baking and post-baking temperatures in this case are both 120 ° C.
【００１７】その後、前記クロム膜とＰＲの密着性を低
下させる処理として、温純水中に前記絶縁基板を浸漬す
る（Ｓ４）。例えば、温度５０℃の温純水を使用する場
合には約２分間浸漬処理する。次に硝セリ安１０〜２０
重量％、硝酸５〜１０重量％を含むエッチング液に浸漬
し、前記絶縁基板上のクロム膜をエッチングしパターニ
ング（クロム膜回路形成）を行う（Ｓ５）。前記エッチ
ング液は温度２０〜４０℃で使用されるが、好ましい温
度範囲は２０〜３０℃である。エッチング液の温度が２
５±１℃の場合、厚７５ｎｍのクロム膜は、１分程度で
エッチングされる。After that, as a treatment for reducing the adhesion between the chromium film and the PR, the insulating substrate is immersed in warm pure water (S4). For example, when hot pure water having a temperature of 50 ° C. is used, the immersion treatment is performed for about 2 minutes. Next, the cerium nitrate 10-20
By immersing in an etching solution containing 5% by weight of nitric acid and 5% by weight of nitric acid, the chromium film on the insulating substrate is etched and patterned (chromium film circuit formation) (S5). The etching solution is used at a temperature of 20 to 40 ° C, and a preferable temperature range is 20 to 30 ° C. The temperature of the etching solution is 2
In the case of 5 ± 1 ° C., the chromium film having a thickness of 75 nm is etched in about 1 minute.
【００１８】図２は本発明の第１の実施の形態における
クロム膜回路のテーパー角度に及ぼすエッチング液中の
硝酸濃度とエッチング液の温度の関係の実験結果であ
る。この結果から比較的低濃度の硝酸濃度でテーパー角
度３０°〜８０°（テーパー角度は回路の断面形状が順
台形の場合の下底と斜辺とのなす角度をいう）のクロム
膜回路が形成されることがわかる。FIG. 2 is an experimental result of the relationship between the concentration of nitric acid in the etching solution and the temperature of the etching solution, which influences the taper angle of the chromium film circuit in the first embodiment of the present invention. From this result, a chromium film circuit with a relatively low concentration of nitric acid having a taper angle of 30 ° to 80 ° (the taper angle refers to the angle formed by the lower base and the hypotenuse when the circuit has a trapezoidal sectional shape) is formed. I understand that
【００１９】上記の本発明の実施の形態では、硝セリ安
の濃度１０〜２０重量％、硝酸濃度５〜１０重量％のエ
ッチング液が使用されるが、この理由について説明す
る。In the above-described embodiment of the present invention, an etching solution having a concentration of ceric ammonium nitrate of 10 to 20% by weight and a nitric acid concentration of 5 to 10% by weight is used. The reason for this will be described.
【００２０】図３および図４は硝セリ安−過塩素酸系と
硝セリ安−硝酸系の溶解度曲線をそれぞれ示す。図３、
図４の比較により、図４の本発明のエッチング液に使用
される硝セリ安−硝酸系の溶解度曲線の方が溶解可能範
囲が広く、白色沈殿物を析出しにくいことがわかる。FIGS. 3 and 4 show the solubility curves of the ammonium nitrate-perchloric acid system and the ammonium nitrate-nitric acid system, respectively. Figure 3,
From the comparison of FIG. 4, it can be seen that the solubility curve of the ceric nitrate-nitric acid system used in the etching solution of the present invention in FIG. 4 has a wider soluble range and a white precipitate is less likely to deposit.
【００２１】図５は、硝セリ安−硝酸系エッチング液の
沈殿物生成を安定性指標とした長期安定性（２ケ月放
置）を調査した実験結果である。これらの結果からエッ
チング液中の硝酸濃度は、５重量％（以降、ｗｔ％）以
上必要であり、それ未満では劣化が速いことがわかっ
た。FIG. 5 shows the results of an experiment in which long-term stability (left for two months) was investigated by using the precipitation of a ceric nitrate-nitric acid type etching solution as a stability index. From these results, it was found that the nitric acid concentration in the etching solution needs to be 5% by weight (hereinafter, wt%) or more, and if it is less than that, deterioration is rapid.
【００２２】また、図６は、エッチング形成されたクロ
ム膜回路間の微細なエッチング残渣（以下、微細残渣と
いう）の発生に及ぼす硝酸濃度と硝セリ安の濃度の関係
を調査した実験結果である。FIG. 6 shows the experimental results of investigating the relationship between the concentration of nitric acid and the concentration of ammonium nitrate based on the generation of fine etching residues (hereinafter referred to as fine residues) between the chromium film circuits formed by etching. .
【００２３】この結果から、微細残渣の発生を抑制する
ためには、硝酸濃度が５．０ｗｔ％以上でかつ硝セリ安
濃度が２０．０ｗｔ％以下の範囲である必要があること
がわかる。From these results, it is understood that in order to suppress the generation of fine residues, the nitric acid concentration must be in the range of 5.0 wt% or more and the ammonium serium nitrate concentration must be in the range of 20.0 wt% or less.
【００２４】図７は、図２の実験と同じようにエッチン
グ形成されたクロム膜回路のテーパー角度を３０°〜８
０°に保つためのエッチング液の硝セリ安と硝酸濃度の
関係を調査した実験結果である。この結果から硝酸濃度
は、５〜１０ｗｔ％が最適であることがわかった。FIG. 7 shows a taper angle of the chromium film circuit formed by etching as in the experiment of FIG.
It is the experimental result which investigated the relationship between the nitric acid concentration and the nitric acid concentration of the etching liquid for keeping at 0 °. From this result, it was found that the optimum nitric acid concentration was 5 to 10 wt%.
【００２５】またクロム膜のエッチング速度については
硝セリ安の濃度が減少すると低下するため、１０ｗｔ％
以上が適当である。Further, the etching rate of the chromium film decreases with a decrease in the concentration of ceric nitrate, and is therefore 10 wt%.
The above is appropriate.
【００２６】以上の実験結果から本発明のクロム膜のエ
ッチング液には図８に示すように総合的に良好な組成と
して硝セリ安１０〜２０ｗｔ％かつ硝酸５〜１０ｗｔ％
のものが選択された。この組成のエッチング液は３か月
でも白色沈殿の生成はなく安定していることもわかっ
た。From the above experimental results, as shown in FIG. 8, the etching solution for the chromium film of the present invention has a composition of 10 to 20% by weight of ceric oxide and 5 to 10% by weight of nitric acid.
Was selected. It was also found that the etching solution of this composition was stable even after 3 months with no formation of white precipitate.
【００２７】次に、本発明の第２の実施の形態について
図９を参照して説明する。Next, a second embodiment of the present invention will be described with reference to FIG.
【００２８】図中の符号Ｓ６〜Ｓ１０は各処理工程を示
す。工程Ｓ６〜Ｓ８は上記の本発明の第１の実施形態の
図１の工程Ｓ１〜Ｓ３と同じである。絶縁基板上のＰＲ
の形成されたクロム膜（厚さ１５０ｎｍ）（Ｓ６〜Ｓ
８）を硝セリ安１０〜２０ｗｔ％、硝酸５〜１０ｗｔ％
のエッチング液を用いて、約半分の厚さエッチング処理
する（Ｓ９）。このエッチング液でエッチングするクロ
ム膜の厚さは、自由に選択できるが、約半分の厚さエッ
チングする場合に、その後のドライエッチングでクロム
膜回路の安定したテーパー形状が得られる。更に、Ｃｌ
2 ／Ｏ2 ／Ｈｅガス＝１００／２００／１００（ｃｍ3
／分），ＲＦパワー（高周波放電電力）＝１５００Ｗ，
２０〜５０Ｐａのプラズマモードで約２分間ドライエッ
チング処理し、前記クロム膜の残り（厚さ約７５ｎｍ）
をエッチングし、クロム膜のパターニングを行いテーパ
ー角度３０°〜８０°の幅１〜５ｎｍのパターンが形成
された（Ｓ１０）。尚、ドライエッチング用ガスとして
は、その他ＨＣｌ／Ｏ2 ／ＨｅやＢＣｌ3 ／Ｏ2 ／Ｈｅ
の混合ガスを使用できる。Reference numerals S6 to S10 in the figure indicate respective processing steps. Steps S6 to S8 are the same as steps S1 to S3 of FIG. 1 of the first embodiment of the present invention described above. PR on insulating substrate
Formed chrome film (thickness 150nm) (S6 ~ S
8) is 10-20 wt% of ammonium nitrate, 5-10 wt% of nitric acid
Etching is performed to a thickness of about half (S9). The thickness of the chromium film to be etched by this etching solution can be freely selected, but when etching is performed to about half the thickness, a stable taper shape of the chromium film circuit can be obtained by the subsequent dry etching. Furthermore, Cl
2 / O 2 / He gas = 100/200/100 (cm 3
/ Min), RF power (high frequency discharge power) = 1500 W,
Dry etching treatment is performed in a plasma mode of 20 to 50 Pa for about 2 minutes, and the remaining chromium film (thickness: about 75 nm)
Was etched and the chrome film was patterned to form a pattern having a taper angle of 30 ° to 80 ° and a width of 1 to 5 nm (S10). Other dry etching gases include HCl / O 2 / He and BCl 3 / O 2 / He.
Can be used.
【００２９】[0029]
【発明の効果】本発明の第１の効果は、エッチング前に
温水処理してクロム膜とＰＲの密着を低下させ、経時劣
化とエッチング残渣が抑制された硝セリ安１０〜２０重
量％、硝酸５〜１０重量％のエッチング液を使用してエ
ッチングするため安定したテーパー形状のクロム膜回路
を形成できることである。The first effect of the present invention is that 10 to 20% by weight of cerium nitrate is used, which has been treated with warm water before etching to reduce the adhesion between the chromium film and PR, and which is prevented from deterioration over time and etching residues. It is possible to form a stable tapered chromium film circuit because etching is performed using an etching solution of 5 to 10% by weight.
【００３０】また、本発明の第２の効果は、前記エッチ
ング液によるウエットエッチングとプラズマガスによる
ドライエッチングにより、安定したテーパー形状のクロ
ム膜回路を形成とともに、さらにエッチング液の長寿命
化が図れることである。The second effect of the present invention is that the wet etching with the etching solution and the dry etching with the plasma gas can form a stable tapered chromium film circuit and further prolong the life of the etching solution. Is.
【図１】本発明の第１の実施の形態のクロム膜のエッチ
ング方法を説明するための処理工程図である。FIG. 1 is a process step diagram for explaining a chromium film etching method according to a first embodiment of the present invention.
【図２】本発明の第１の実施の形態におけるクロム膜回
路のテーパー角度に及ぼすエッチング液中の硝酸濃度と
エッチング液の温度の関係の調査実験結果である。FIG. 2 is a result of an examination experiment on a relationship between a nitric acid concentration in an etching solution and a temperature of the etching solution, which influences a taper angle of the chromium film circuit in the first embodiment of the present invention.
【図３】硝セリ安−過塩素酸の溶解度曲線である。FIG. 3 is a solubility curve of ammonium nitrate-perchloric acid.
【図４】硝セリ安−硝酸の溶解度曲線である。FIG. 4 is a solubility curve of ammonium nitrate-nitric acid.
【図５】硝セリ安−硝酸系エッチング液の長期安定性実
験結果である。FIG. 5 is a result of long-term stability experiment of ammonium nitrate-nitric acid system etching solution.
【図６】クロム膜回路間の微細残渣の発生に及ぼす硝酸
濃度と硝セリ安の濃度の関係を調査実験結果である。FIG. 6 is a result of an investigation experiment on the relationship between the concentration of nitric acid and the concentration of ammonium nitrate based on the generation of fine residues between the chromium film circuits.
【図７】クロム膜回路のテーパー角度とエッチング液の
硝セリ安と硝酸濃度関係の実験結果である。FIG. 7 is an experimental result of the relationship between the taper angle of the chromium film circuit, the ammonium nitrate of the etching solution, and the nitric acid concentration.
【図８】本発明に使用するエッチング液の総合的に良好
な組成領域である。FIG. 8 is an overall good composition region of the etching solution used in the present invention.
【図９】本発明の第２の実施の形態のクロム膜のエッチ
ング方法を説明するための処理工程図である。FIG. 9 is a process step diagram for explaining a chromium film etching method according to a second embodiment of the present invention.
Claims (4)
上にエッチングフォトレジストを形成する工程と、前記
エッチングフォトレジストを温度５０〜１００℃の温水
に浸漬処理する工程と、硝酸第２セリウムアンモニウム
を１０〜２０重量％、硝酸を５〜１０重量％含み液温２
０〜３０℃の水溶液からなる硝酸系エッチング液に浸漬
し、前記レジスト膜マスク非被覆部のクロム膜をエッチ
ングする工程とを含むことを特徴とするクロム膜のエッ
チング方法。1. A step of forming an etching photoresist on a chromium film by a photolithography method, a step of immersing the etching photoresist in hot water at a temperature of 50 to 100 ° C., and a step of adding ceric ammonium nitrate to 10 to 10. 20 wt%, 5-10 wt nitrate% unrealized liquid temperature 2
And a step of immersing in a nitric acid-based etching solution composed of an aqueous solution at 0 to 30 ° C. to etch the chromium film in the resist film mask uncovered portion.
をエッチングする工程において、前記クロム膜を所定の
厚さ残るようにエッチングし、次いでさらに前記レジス
ト膜マスク非被覆部の前記クロム膜の残りを酸素系プラ
ズマガスを使用してドライエッチングする工程とを含む
ことを特徴とする請求項１記載のクロム膜のエッチング
方法。2. The chromium film formed by the nitric acid-based etching solution.
In the step of etching the
Remaining thickness so etched and then further the resist film chromium according to claim 1, wherein the remainder of the chromium film mask uncoated portion using an oxygen-based plasma gas, characterized in that it comprises the step of dry-etching Method of etching a film.
Ｈｅ，ＨＣｌ／Ｏ2／Ｈｅ，ＢＣｌ3／Ｏ2／Ｈｅの混合
ガス群から選ばれた混合ガスのプラズマガスである請求
項２記載のクロム膜のエッチング方法。3. The oxygen-based plasma gas is Cl 2 / O 2 /
The method for etching a chromium film according to claim 2 , wherein the plasma gas is a mixed gas selected from the mixed gas group of He, HCl / O 2 / He, and BCl 3 / O 2 / He.
レジスト膜マスク非被覆部のクロム膜エッチングする前
記所定の厚さがクロム膜の約半分の厚さであることを特
徴とする請求項２記載のクロム膜のエッチング方法。4. The predetermined thickness for etching the chromium film in the resist film mask uncovered portion using the nitric acid-based etching solution is about half the thickness of the chromium film. A method for etching a chromium film as described above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29436597A JP3366238B2 (en) | 1997-10-27 | 1997-10-27 | Chromium film etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29436597A JP3366238B2 (en) | 1997-10-27 | 1997-10-27 | Chromium film etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11131263A JPH11131263A (en) | 1999-05-18 |
| JP3366238B2 true JP3366238B2 (en) | 2003-01-14 |
Family
ID=17806774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29436597A Expired - Fee Related JP3366238B2 (en) | 1997-10-27 | 1997-10-27 | Chromium film etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3366238B2 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4510979B2 (en) | 2000-02-23 | 2010-07-28 | ルネサスエレクトロニクス株式会社 | Method for using ruthenium or ruthenium oxide removing liquid and method for removing ruthenium or ruthenium oxide |
| KR100415947B1 (en) * | 2001-04-13 | 2004-01-24 | 테크노세미켐 주식회사 | Formulation of Cr Etchant |
| WO2003021659A1 (en) | 2001-09-04 | 2003-03-13 | Applied Materials, Inc. | Methods and apparatus for etching metal layers on substrates |
| WO2004086143A2 (en) | 2003-03-21 | 2004-10-07 | Applied Materials, Inc. | Multi-step process for etching photomasks |
| US7077973B2 (en) | 2003-04-18 | 2006-07-18 | Applied Materials, Inc. | Methods for substrate orientation |
| US7521000B2 (en) | 2003-08-28 | 2009-04-21 | Applied Materials, Inc. | Process for etching photomasks |
| JP4513304B2 (en) * | 2003-10-14 | 2010-07-28 | セイコーエプソン株式会社 | Etching method and piezoelectric device and piezoelectric vibrating piece manufacturing method using the same. |
| US7829243B2 (en) | 2005-01-27 | 2010-11-09 | Applied Materials, Inc. | Method for plasma etching a chromium layer suitable for photomask fabrication |
| CN105401152A (en) * | 2015-11-16 | 2016-03-16 | 无锡英普林纳米科技有限公司 | Etchant for liquid crystal display |
-
1997
- 1997-10-27 JP JP29436597A patent/JP3366238B2/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JPH11131263A (en) | 1999-05-18 |
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