CN105401152A - Etchant for liquid crystal display - Google Patents
Etchant for liquid crystal display Download PDFInfo
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- CN105401152A CN105401152A CN201510787081.9A CN201510787081A CN105401152A CN 105401152 A CN105401152 A CN 105401152A CN 201510787081 A CN201510787081 A CN 201510787081A CN 105401152 A CN105401152 A CN 105401152A
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- acid
- weight percent
- crystal display
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- hydrochloric acid
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
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- General Chemical & Material Sciences (AREA)
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- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention discloses an etchant for a liquid crystal display. The etchant for the liquid crystal display comprises, by weight, 0.5%-2.3% of ammonium ceric nitrate, 0.2%-1.8% of o-fluorobenzoic acid, 1.2%-2.6% of n-pentanoic acid, 1.2%-2.6% of iodic acid, 1.5%-2.3% of organic hydrochloric acid, 2.5%-3.3% of non-ionic surface active agents, 1.5%-2.6% of defoaming agents and the balance distilled water. According to the etchant for the liquid crystal display, the ammonium ceric nitrate, the o-fluorobenzoic acid, the n-pentanoic acid, the iodic acid and the organic hydrochloric acid are newly added on the basis of an original technique, etching can be conducted under the condition that permeation of an etch-resistant coating is avoided, and the etching speed of a chrome metallic film is remarkably increased; the etching speed can be controlled, degradation of the etch-resistant protection coating is effectively restrained, a chrome metallic film wire harness with the flat and smooth surface is obtained, and the etchant has important application value.
Description
Technical field
The present invention relates to a kind of liquid-crystal display etching solution.
Background technology
Thin Film Transistor-LCD (TFT-LCD) is because of advantages such as its speed of response is fast, good contrast, visible angle are large, rich colors, as the main product in all kinds of nixie display instantly, be widely used in the aspect such as notebook computer, LCD TV, be subject to the favor of more and more user.Thin film transistor is the Primary Component in Thin Film Transistor-LCD, and its performance quality has decisive role to the performance of final lcd products.Its manufacturing process is exactly optics according to device and electrology characteristic requirement, manufactures different films on the glass substrate, and processes different films according to design requirements, be formed with regularly arranged specific electronics device---thin film transistor array.The main technique of thin film transistor array manufacture comprises the basic steps such as base-plate cleaning, film forming, photoetching, inspection reparation.Wherein core process is photoetching.In the manufacturing processed of liquid crystal indicator, need to carry out multilayer wiring by the process of repeatedly photoetching at glass baseplate surface.
Namely chromium metallic membrane can be used as middle layer, the protective layer of other metals, also can be attached to separately on substrate, do gate electrode.It is easy to process, can be obtained the chromium metallic film pattern of various complexity by etching technique.The rich reserves of chromium in addition, low price, so in liquid crystal indicator, chromium metal because of its excellent electric conductivity, thermostability, corrosion-resistant, resistance to oxidation, with other metals, there is good tack and the advantage such as cheap and be widely used in Thin Film Transistor-LCD manufacture in electrode, wiring material.
Generally component nitric acid is all there is in current chromium metallic membrane etching solution.The shortcoming that this kind of etching solution mainly exists when etching chromium metallic membrane has: etching speed is slow, causes photo-resist to be soaked in for a long time in etching solution, part photo-resist will be made to come off, cause part metals cabling etch effect not good; To the etch-resistant coating not needing to etch and chromium metallic membrane interface also have because of etching solution infiltrate caused by etched mark cause the chromium metallic film surface not needing etching part coarse.
Summary of the invention
The defect that the present invention seeks to exist for prior art provides a kind of liquid-crystal display etching solution.
The present invention for achieving the above object, adopts following technical scheme: a kind of liquid-crystal display etching solution, comprises the composition of following weight percent:
Ceric ammonium nitrate 0.5% ~ 2.3%;
O-fluorobenzoic acid 0.2% ~ 1.8%;
Positive valeric acid 1.2% ~ 2.6%;
Acid iodide 1.2% ~ 2.6%;
Organic hydrochloric acid 1.5% ~ 2.3%;
Nonionogenic tenside 2.5% ~ 3.3%;
Defoamer 1.5% ~ 2.6%;
All the other are distilled water.
Preferably, described etching solution comprises the composition of following weight percent:
Ceric ammonium nitrate 0.5%;
O-fluorobenzoic acid 0.2%;
Positive valeric acid 1.2%;
Acid iodide 1.2%;
Organic hydrochloric acid 1.5%;
Nonionogenic tenside 2.5%;
Defoamer 1.5%;
All the other are distilled water.
Preferably, described etching solution comprises the composition of following weight percent:
Ceric ammonium nitrate 1.5%;
O-fluorobenzoic acid 0.9%;
Positive valeric acid 1.9%;
Acid iodide 1.9%;
Organic hydrochloric acid 1.9%;
Nonionogenic tenside 2.9%;
Defoamer 2.0%;
All the other are distilled water.
Preferably, described etching solution comprises the composition of following weight percent:
Ceric ammonium nitrate 2.3%;
O-fluorobenzoic acid 1.8%;
Positive valeric acid 2.6%;
Acid iodide 2.6%;
Organic hydrochloric acid 2.3%;
Nonionogenic tenside 3.3%;
Defoamer 2.6%;
All the other are distilled water.
Further, the concentration of described ceric ammonium nitrate is greater than 95.5% (weight percent), the concentration of described o-fluorobenzoic acid is greater than 97.5% (weight percent), the concentration of described positive valeric acid is greater than 89% (weight percent), the concentration of described acid iodide is greater than 89% (weight percent), and the concentration of described organic hydrochloric acid is greater than 75% (weight percent).
Further, described nonionogenic tenside is spans nonionogenic tenside.
Beneficial effect of the present invention: the present invention adds ceric ammonium nitrate, o-fluorobenzoic acid, positive valeric acid, acid iodide, organic hydrochloric acid by newly adding on the basis of original technique, can not only etch when there is not etch-resistant coating infiltration, significantly improve the etching speed of chromium metallic membrane, there is etching speed controllability, the deterioration of effective suppression anticorrosion protection layer, obtain the chromium metallic membrane distribution of surperficial flat-satin, there is important using value; And effectively can reduce the surface tension of etching solution, infiltration can not only be produced, the effect infiltrated, and can etching indium tin oxide semiconductor nesa coating speed moderate, stable reaction, makes it under the prerequisite not affecting quality product, improve the etch effect of product, and product can be preserved at relatively low ambient temperatures, avoid the etching that original technology causes clean, the shortcoming that can not store at low temperatures, present method can be applicable to scale operation.
Embodiment
Embodiment 1
The preparation method of above-mentioned liquid-crystal display etching solution, comprises the steps:
The first step: storng-acid cation exchange resin being joined weight percent is in 1.5% organic hydrochloric acid, be uniformly mixed, the speed of stirring is 75 revs/min, and churning time is 12 minutes, then leach storng-acid cation exchange resin, control or remove the foreign ion in organic hydrochloric acid;
Second step: by weight percent be the ceric ammonium nitrate of 0.5% and the distilled water of 1/5th to entering in reactor, fully stir under normal temperature, normal pressure, churning time is 5 minutes, and stirring velocity is 55 revs/min;
3rd step: then add the o-fluorobenzoic acid that weight percent is 0.2%, fully stirs 3 minutes; Add the positive valeric acid that weight percent is 1.2%, fully stir 4 minutes; Add the distilled water of 1/5th, fully stir 3 minutes; Add the acid iodide that weight percent is 1.2%, fully stir 3 minutes; Add organic hydrochloric acid that weight percent is 1.5%, fully stir 4 minutes; Add the nonionogenic tenside that weight percent is 2.5%, fully stir 3 minutes; Add the defoamer that weight percent is 1.5%, fully stir 1 minute; Finally fill it up with distilled water again, then stir 10 minutes, stirring velocity is 65 revs/min;
5th step: finally by the metre filter of obtained mixture through 0.16 μm, to remove the unwanted particles that particle diameter in mixture is greater than 0.16 μm, obtained required etching solution, its surface tension is low is 70 × 10
-3n/m, Tc is 0 DEG C.
Wherein, the concentration of described ceric ammonium nitrate is greater than 95.5% (weight percent), the concentration of described o-fluorobenzoic acid is greater than 97.5% (weight percent), the concentration of described positive valeric acid is greater than 89% (weight percent), the concentration of described acid iodide is greater than 89% (weight percent), and the concentration of described organic hydrochloric acid is greater than 75% (weight percent).
Wherein, described nonionogenic tenside is spans nonionogenic tenside.
Wherein, described storng-acid cation exchange resin is strongly acidic styrene type cation exchange resin.
Wherein, the mass ratio of described storng-acid cation exchange resin and organic hydrochloric acid is 0.6 ~ 0.9.
Embodiment 2
The preparation method of above-mentioned liquid-crystal display etching solution, comprises the steps:
The first step: storng-acid cation exchange resin being joined weight percent is in 1.9% organic hydrochloric acid, be uniformly mixed, the speed of stirring is 82 revs/min, and churning time is 17 minutes, then leach storng-acid cation exchange resin, control or remove the foreign ion in organic hydrochloric acid;
Second step: by weight percent be the ceric ammonium nitrate of 1.5% and the distilled water of 1/5th to entering in reactor, fully stir under normal temperature, normal pressure, churning time is 8 minutes, and stirring velocity is 60 revs/min;
3rd step: then add the o-fluorobenzoic acid that weight percent is 1.2%, fully stirs 4 minutes; Add the positive valeric acid that weight percent is 1.9%, fully stir 5 minutes; Add the distilled water of 1/5th, fully stir 4 minutes; Add the acid iodide that weight percent is 2.0%, fully stir 3.5 minutes; Add organic hydrochloric acid that weight percent is 1.5%, fully stir 4 minutes; Add the nonionogenic tenside that weight percent is 2.5%, fully stir 3 minutes; Add the defoamer that weight percent is 1.5%, fully stir 1 minute; Finally fill it up with distilled water again, then stir 10 minutes, stirring velocity is 65 revs/min;
5th step: finally by the metre filter of obtained mixture through 0.14 μm, to remove the unwanted particles that particle diameter in mixture is greater than 0.14 μm, obtained required etching solution, its surface tension is low is 60 × 10
-3n/m, Tc is-15 DEG C.
Wherein, the concentration of described ceric ammonium nitrate is greater than 95.5% (weight percent), the concentration of described o-fluorobenzoic acid is greater than 97.5% (weight percent), the concentration of described positive valeric acid is greater than 89% (weight percent), the concentration of described acid iodide is greater than 89% (weight percent), and the concentration of described organic hydrochloric acid is greater than 75% (weight percent).
Wherein, described nonionogenic tenside is spans nonionogenic tenside.
Wherein, described storng-acid cation exchange resin is strongly acidic styrene type cation exchange resin.
Wherein, the mass ratio of described storng-acid cation exchange resin and organic hydrochloric acid is 0.6 ~ 0.9.
Embodiment 3
The preparation method of above-mentioned liquid-crystal display etching solution, comprises the steps:
The first step: storng-acid cation exchange resin being joined weight percent is in 2.3% organic hydrochloric acid, be uniformly mixed, the speed of stirring is 90 revs/min, and churning time is 20 minutes, then leach storng-acid cation exchange resin, control or remove the foreign ion in organic hydrochloric acid;
Second step: by weight percent be the ceric ammonium nitrate of 2.3% and the distilled water of 1/5th to entering in reactor, fully stir under normal temperature, normal pressure, churning time is 10 minutes, and stirring velocity is 65 revs/min;
3rd step: then add the o-fluorobenzoic acid that weight percent is 1.8%, fully stirs 5 minutes; Add the positive valeric acid that weight percent is 2.6%, fully stir 6 minutes; Add the distilled water of 1/5th, fully stir 5 minutes; Add the acid iodide that weight percent is 2.6%, fully stir 4 minutes; Add organic hydrochloric acid that weight percent is 2.3%, fully stir 6 minutes; Add the nonionogenic tenside that weight percent is 3.3%, fully stir 5 minutes; Add the defoamer that weight percent is 2.6%, fully stir 3 minutes; Finally fill it up with distilled water again, then stir 15 minutes, stirring velocity is 80 revs/min;
5th step: finally by the metre filter of obtained mixture through 0.12 μm, to remove the unwanted particles that particle diameter in mixture is greater than 0.12 μm, obtained required etching solution, its surface tension is low is 50 × 10
-3n/m, Tc is-25 DEG C.
Wherein, the concentration of described ceric ammonium nitrate is greater than 95.5% (weight percent), the concentration of described o-fluorobenzoic acid is greater than 97.5% (weight percent), the concentration of described positive valeric acid is greater than 89% (weight percent), the concentration of described acid iodide is greater than 89% (weight percent), and the concentration of described organic hydrochloric acid is greater than 75% (weight percent).
Wherein, described nonionogenic tenside is spans nonionogenic tenside.
Wherein, described storng-acid cation exchange resin is strongly acidic styrene type cation exchange resin.
Wherein, the mass ratio of described storng-acid cation exchange resin and organic hydrochloric acid is 0.6 ~ 0.9.
In sum, the following advantage that has of liquid-crystal display etching solution of the present invention and preparation method thereof: 1) change surface
Tension force, makes its surface tension be reduced to about 50 ~ 703N/m from traditional 80mN/m, strengthens its surface wettability, and make the object in use reaching uniformity, etch effect is good, remains without microcrystal; 2) in addition, etching solution of the present invention can not crystallization between-25 DEG C ~ 0 DEG C, do not affect client device, and Product transport vehicle is without the need to adopting Insulation, can reduces transportation cost.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. a liquid-crystal display etching solution, is characterized in that, comprises the composition of following weight percent:
Ceric ammonium nitrate 0.5% ~ 2.3%;
O-fluorobenzoic acid 0.2% ~ 1.8%;
Positive valeric acid 1.2% ~ 2.6%;
Acid iodide 1.2% ~ 2.6%;
Organic hydrochloric acid 1.5% ~ 2.3%;
Nonionogenic tenside 2.5% ~ 3.3%;
Defoamer 1.5% ~ 2.6%;
All the other are distilled water.
2. a kind of liquid-crystal display etching solution as claimed in claim 1, is characterized in that, comprise the composition of following weight percent:
Ceric ammonium nitrate 0.5%;
O-fluorobenzoic acid 0.2%;
Positive valeric acid 1.2%;
Acid iodide 1.2%;
Organic hydrochloric acid 1.5%;
Nonionogenic tenside 2.5%;
Defoamer 1.5%;
All the other are distilled water.
3. a kind of liquid-crystal display etching solution as claimed in claim 1, is characterized in that, comprise the composition of following weight percent:
Ceric ammonium nitrate 1.5%;
O-fluorobenzoic acid 0.9%;
Positive valeric acid 1.9%;
Acid iodide 1.9%;
Organic hydrochloric acid 1.9%;
Nonionogenic tenside 2.9%;
Defoamer 2.0%;
All the other are distilled water.
4. a kind of liquid-crystal display etching solution as claimed in claim 1, is characterized in that, comprise the composition of following weight percent:
Ceric ammonium nitrate 2.3%;
O-fluorobenzoic acid 1.8%;
Positive valeric acid 2.6%;
Acid iodide 2.6%;
Organic hydrochloric acid 2.3%;
Nonionogenic tenside 3.3%;
Defoamer 2.6%;
All the other are distilled water.
5. a kind of liquid-crystal display etching solution as described in any one of Claims 1-4, it is characterized in that, the concentration of described ceric ammonium nitrate is greater than 95.5% (weight percent), the concentration of described o-fluorobenzoic acid is greater than 97.5% (weight percent), the concentration of described positive valeric acid is greater than 89% (weight percent), the concentration of described acid iodide is greater than 89% (weight percent), and the concentration of described organic hydrochloric acid is greater than 75% (weight percent).
6. a kind of liquid-crystal display etching solution as described in any one of Claims 1-4, is characterized in that, described nonionogenic tenside is spans nonionogenic tenside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510787081.9A CN105401152A (en) | 2015-11-16 | 2015-11-16 | Etchant for liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510787081.9A CN105401152A (en) | 2015-11-16 | 2015-11-16 | Etchant for liquid crystal display |
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| Publication Number | Publication Date |
|---|---|
| CN105401152A true CN105401152A (en) | 2016-03-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510787081.9A Pending CN105401152A (en) | 2015-11-16 | 2015-11-16 | Etchant for liquid crystal display |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11131263A (en) * | 1997-10-27 | 1999-05-18 | Nec Kagoshima Ltd | Etching of chromium film |
| CN102277573A (en) * | 2011-08-19 | 2011-12-14 | 绵阳艾萨斯电子材料有限公司 | Chromium etchant for liquid crystal display screens and preparation method thereof |
| CN102382657A (en) * | 2011-10-11 | 2012-03-21 | 绵阳艾萨斯电子材料有限公司 | Etching liquid for transparent conducting film and preparation method thereof |
| CN104962287A (en) * | 2015-06-02 | 2015-10-07 | 江阴江化微电子材料股份有限公司 | ITO film etching solution for liquid crystal panel manufacturing process and preparation method thereof |
-
2015
- 2015-11-16 CN CN201510787081.9A patent/CN105401152A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11131263A (en) * | 1997-10-27 | 1999-05-18 | Nec Kagoshima Ltd | Etching of chromium film |
| CN102277573A (en) * | 2011-08-19 | 2011-12-14 | 绵阳艾萨斯电子材料有限公司 | Chromium etchant for liquid crystal display screens and preparation method thereof |
| CN102382657A (en) * | 2011-10-11 | 2012-03-21 | 绵阳艾萨斯电子材料有限公司 | Etching liquid for transparent conducting film and preparation method thereof |
| CN104962287A (en) * | 2015-06-02 | 2015-10-07 | 江阴江化微电子材料股份有限公司 | ITO film etching solution for liquid crystal panel manufacturing process and preparation method thereof |
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Application publication date: 20160316 |
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