JP3334227B2 - Substrate wet processing method and apparatus - Google Patents
Substrate wet processing method and apparatusInfo
- Publication number
- JP3334227B2 JP3334227B2 JP07512193A JP7512193A JP3334227B2 JP 3334227 B2 JP3334227 B2 JP 3334227B2 JP 07512193 A JP07512193 A JP 07512193A JP 7512193 A JP7512193 A JP 7512193A JP 3334227 B2 JP3334227 B2 JP 3334227B2
- Authority
- JP
- Japan
- Prior art keywords
- processing
- liquid
- tank
- substrate
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】この発明は基板の湿式処理方法お
よびその装置に関し、さらに詳細には、半導体基板や液
晶ガラス基板等の薄板状の基板を、複数種類の処理液に
浸漬してウェットエッチングや洗浄処理などを連続して
行う技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for wet processing a substrate, and more particularly, to wet etching of a thin substrate such as a semiconductor substrate or a liquid crystal glass substrate by immersing the substrate in a plurality of types of processing liquids. The present invention relates to a technique for continuously performing cleaning and cleaning.
【０００２】[0002]
【従来の技術】半導体装置の性能や信頼性を高く保持す
るためには、半導体基板（以下、ウェハと称する）の表
面の汚染物質を極力低減させて高い清浄度を保つことが
必須であり、この観点から、従来種々のウェハ洗浄処理
技術が開発されている。2. Description of the Related Art In order to maintain the performance and reliability of a semiconductor device at a high level, it is essential to maintain a high cleanliness by minimizing contaminants on the surface of a semiconductor substrate (hereinafter referred to as a wafer). From this viewpoint, various wafer cleaning techniques have been conventionally developed.
【０００３】ウェハ洗浄方法としては、洗浄液を用いた
湿式洗浄が、複数枚のウェハをまとめて処理するバッチ
式洗浄に適していることから主流となっている。この洗
浄方法においては、一般に、高清浄度雰囲気室内に複数
の洗浄槽が配置されて、これら洗浄槽内に満たされた洗
浄液内に、ウェハが搬送処理装置により順次所定時間ず
つ浸漬されて、洗浄処理を施される。[0003] As a wafer cleaning method, wet cleaning using a cleaning liquid has become mainstream because it is suitable for batch cleaning in which a plurality of wafers are processed together. In this cleaning method, generally, a plurality of cleaning tanks are arranged in a high-cleanliness atmosphere chamber, and the wafers are sequentially immersed in a cleaning liquid filled in the cleaning tanks for a predetermined time by a transfer processing device to perform cleaning. Processed.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、このよ
うな洗浄方法では次のような問題があった。However, such a cleaning method has the following problems.
【０００５】すなわち、近時は半導体装置もサブミクロ
ン時代を迎え、このような装置構造の微細化、高集積化
に伴って、ウェハの表面にも非常に高い清浄度が要求さ
れているところ、上記従来の洗浄方法では、ウェハを洗
浄槽から洗浄槽へ移すたびに、そのウェハが清浄度雰囲
気つまり大気中に必ず曝されて、ウェハ表面が大気中の
酸素と接触することになる。In other words, semiconductor devices have recently entered the submicron era, and with the miniaturization and high integration of such device structures, very high cleanliness has been required on the wafer surface. In the above conventional cleaning method, each time a wafer is transferred from the cleaning tank to the cleaning tank, the wafer is always exposed to a clean atmosphere, that is, the atmosphere, and the wafer surface comes into contact with oxygen in the atmosphere.
【０００６】すると、ウェハがこの酸素と化学反応を起
こして、その表面に自然酸化膜を形成し、この自然酸化
膜が後続のウェハ処理工程に支障を来すばかりでなく、
素子特性の劣化を招くなど、装置としての信頼性を損な
うという問題を生じていた。Then, the wafer undergoes a chemical reaction with the oxygen to form a natural oxide film on its surface, and this natural oxide film not only hinders a subsequent wafer processing step, but also causes a problem.
There has been a problem that the reliability of the device is impaired, such as deterioration of element characteristics.
【０００７】また、ウェハの洗浄液に対する引下げ引き
上げ時において、大気と洗浄液の境界面つまり気−液界
面がウェハ表面上を移動することになるため、この界面
部に存在するパーティクル等の汚染物質がウェハ表面に
付着して、汚染を招くおそれもあった。Further, when the wafer is lowered and raised with respect to the cleaning liquid, the boundary surface between the atmosphere and the cleaning liquid, that is, the gas-liquid interface moves on the wafer surface, and contaminants such as particles existing at the interface are removed from the wafer. There was also a possibility that it would adhere to the surface and cause contamination.
【０００８】さらに、複数の洗浄槽が横一列に配置さ
れ、しかもこれら洗浄槽にウェハを浸漬する搬送処理装
置が必須であるため、装置自体の複雑化、大型化を招く
とともに、装置コストも高価となる問題があった。Further, since a plurality of cleaning tanks are arranged in a horizontal row and a transfer processing apparatus for immersing a wafer in these cleaning tanks is essential, the apparatus itself becomes complicated and large, and the apparatus cost is high. There was a problem.
【０００９】本発明は、かかる従来の問題点に鑑みてな
されたものであって、その目的とするところは、ウェハ
を大気中の酸素に接触させることなく、複数種類の処理
液による洗浄処理工程を行うことにより、ウェハ表面へ
の自然酸化膜の生成を防止することができ、しかもシス
テム全体の小型化が図れるウェハの湿式処理技術を提供
することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and an object of the present invention is to provide a cleaning process using a plurality of types of processing solutions without bringing a wafer into contact with atmospheric oxygen. The object of the present invention is to provide a wet processing technique for a wafer which can prevent the formation of a natural oxide film on the wafer surface and can reduce the size of the entire system.
【００１０】[0010]
【課題を解決するための手段】上記目的を達成するた
め、本発明の基板の湿式処理方法は、ウェハを複数種類
の処理液でそれぞれ処理する湿式処理方法であって、密
封された単一の処理液槽内にウェハを収納し、この処理
液槽内に複数種類の処理液を順次置換しながら充填供給
して処理するとともに、先行する処理液から後行する処
理液への置換に際して、置換用の不活性ガスを上記処理
液槽内に充填供給しながら先行する処理液を押出し排除
し、続いて水洗用の純水を上記処理液槽内に充填供給し
て水洗処理した後、後行する処理液を上記処理液槽内に
充填供給しながら上記純水を押し出し排除するようにし
たことを特徴とする。In order to achieve the above object, a wet processing method for a substrate according to the present invention is a wet processing method for processing a wafer with a plurality of types of processing liquids, and comprises a single sealed wafer. A wafer is accommodated in a processing liquid tank, a plurality of processing liquids are sequentially filled in the processing liquid tank while being supplied and processed , and a processing performed after a preceding processing liquid is performed.
When replacing with a physical fluid, the inert gas for replacement is treated as described above.
Extruding and eliminating the preceding processing liquid while filling and supplying the liquid in the liquid tank
Then, pure water for washing is filled and supplied into the treatment liquid tank.
After washing with water, the subsequent processing liquid is placed in the processing liquid tank.
The above pure water is extruded while filling and supplying.
It is characterized by having.
【００１１】また、本発明の基板の湿式処理装置は、上
記処理方法を実施するのに適したものであって、密封可
能な単一の処理液槽と、この処理液槽に複数の処理液を
選択的に供給する給液部とを備えてなり、上記処理液槽
は、その底部に上記給液部の給液配管が連結されるとと
もに、その頂部に排液配管が連結され、上記処理液槽内
に、ウェハを直接保持する基板保持部が設けられている
ことを特徴とする。A wet processing apparatus for a substrate according to the present invention is suitable for carrying out the above-described processing method, and comprises a single sealable processing liquid tank and a plurality of processing liquids in the processing liquid tank. And a liquid supply section for selectively supplying the liquid. The processing liquid tank has a liquid supply pipe connected to the bottom of the processing liquid tank and a drain pipe connected to the top of the processing liquid tank. It is characterized in that a substrate holding portion for directly holding a wafer is provided in the liquid tank.
【００１２】[0012]
【作用】ウェハを単一の密封処理液槽内に収納保持した
状態で、この処理液槽内に複数種類の処理液を順次置換
しながら充填供給して、酸素を除外した雰囲気でのウェ
ハ処理を実現する。With the wafer stored and held in a single sealed processing liquid tank, the processing liquid is filled and supplied while sequentially replacing a plurality of types of processing liquid in the processing liquid tank, and the wafer is processed in an atmosphere excluding oxygen. To achieve.
【００１３】具体的には、先行する処理液から後行する
処理液への置換に際して、置換用の不活性ガスを処理液
槽内に充填供給しながら先行する処理液を押出し排除
し、続いて水洗用の純水を上記処理液槽内に充填供給し
て水洗処理した後、後行する処理液を上記処理液槽内に
充填供給しながら上記純水を押し出し排除する。これに
より、ウェハと酸素との接触を最少限に抑えて、ウェハ
表面への自然酸化膜の生成を防止する。More specifically, when replacing the preceding processing liquid with the following processing liquid, the preceding processing liquid is extruded while filling and supplying an inert gas for replacement into the processing liquid tank.
Then, pure water for washing is filled and supplied into the treatment liquid tank.
Then, the pure water is extruded and removed while filling and supplying the subsequent processing liquid into the processing liquid tank. This minimizes contact between the wafer and oxygen and prevents the formation of a native oxide film on the wafer surface.
【００１４】また、単一の処理液槽ですべてのウェハ処
理工程を行うことにより、装置の小型化を図る。In addition, the size of the apparatus can be reduced by performing all wafer processing steps in a single processing liquid tank.
【００１５】[0015]
【実施例】以下、本発明の実施例を、図面に基づいて詳
細に説明する。Embodiments of the present invention will be described below in detail with reference to the drawings.
【００１６】実施例１ 本発明に係る基板の湿式処理装置の概略構成を図１に示
し、この装置は、具体的にはウェハＷを複数枚（例えば
２５枚）まとめて洗浄するバッチ式洗浄装置であって、
処理液部１、給液部２、排液部３および制御部４を主要
部として備えてなる。Embodiment 1 FIG. 1 shows a schematic configuration of a wet processing apparatus for a substrate according to the present invention. Specifically, this apparatus is a batch type cleaning apparatus for cleaning a plurality of wafers W (for example, 25 wafers) at a time. And
A processing liquid unit 1, a liquid supply unit 2, a drain unit 3, and a control unit 4 are provided as main parts.
【００１７】処理液部１は、ウェハＷ，Ｗ，…をバッチ
処理する単一の処理液槽５と、この処理液槽５を保温加
熱するための外槽６から構成されてなり、図示しない
が、清浄度雰囲気に保たれたクリーンルーム内に配置さ
れている。The processing liquid section 1 is composed of a single processing liquid tank 5 for batch-processing wafers W, W,... And an outer tank 6 for keeping the processing liquid tank 5 warm and heated. However, it is arranged in a clean room kept in a clean atmosphere.
【００１８】処理液槽５は密封可能な構造とされたＰＦ
Ａ製のもので、その底部５ａに給液配管７が連結される
とともに、その頂部５ｂに排液配管８と不活性ガス導入
管９が連結されている。また図示しないが、処理液槽５
の内部には、ウェハＷ，Ｗ，…を直接つまりカセットレ
スで保持する基板保持部が設けられている。The processing liquid tank 5 has a sealable PF
A liquid supply pipe 7 is connected to the bottom 5a, and a drain pipe 8 and an inert gas introduction pipe 9 are connected to the top 5b. Although not shown, the processing solution tank 5
Are provided with a substrate holding portion for holding the wafers W, W,... Directly, that is, without a cassette.
【００１９】上記給液配管７は、複数の給液弁１０ａ〜
１０ｄ（図示例においては４つ）を介して、各種洗浄液
を供給する給液部２および純水を供給する純水供給源
（図示省略）へ連結されるとともに、排液弁１１を備え
る排水管１１ａを介して排水部（図示省略）へ連結され
ている。上記排液配管８は、手動弁１２および２つの切
換弁１３ａ，１３ｂを介して、排液部３および上記排水
部へ連結されている。また、上記不活性ガス導入管９は
ウェハＷ，Ｗ，…取出時に予め純水を押出し排水するた
めのもので、具体的にはチェック弁９ａを介して窒素
（Ｎ2 ）が導入される。The supply pipe 7 includes a plurality of supply valves 10a to 10a.
A drain pipe 10 d (four in the illustrated example) is connected to a liquid supply unit 2 for supplying various cleaning liquids and a pure water supply source (not shown) for supplying pure water, and includes a drain valve 11. It is connected to a drain section (not shown) via 11a. The drainage pipe 8 is connected to the drainage unit 3 and the drainage unit via a manual valve 12 and two switching valves 13a and 13b. The inert gas introduction pipe 9 is for extruding and draining pure water in advance at the time of taking out the wafers W, W,..., And specifically, nitrogen (N 2 ) is introduced through a check valve 9a.
【００２０】外槽６は上記処理液槽５を浸漬する上方開
口型のＰＰ製のもので、その内部に純水が満たされると
ともに、この純水を加熱するヒータ１５を備える。純水
は、手動弁１６ａを備える給水管１６を介して、上記純
水供給源から供給される。１７は純水の液面を確認する
空焚き防止用センサ、１８は水温を計る温度センサ、お
よび１９は外槽６の底部６ａから上記排水部へ連結する
排水管１９ａに設けられた排水弁をそれぞれ示してい
る。The outer tank 6 is made of PP having an upper opening type in which the processing liquid tank 5 is immersed. The outer tank 6 is filled with pure water and has a heater 15 for heating the pure water. Pure water is supplied from the pure water supply source via a water supply pipe 16 having a manual valve 16a. Reference numeral 17 denotes a sensor for preventing empty firing for checking the level of pure water, reference numeral 18 denotes a temperature sensor for measuring the water temperature, and reference numeral 19 denotes a drain valve provided on a drain pipe 19a connected from the bottom 6a of the outer tank 6 to the drain. Each is shown.
【００２１】給液部２は、上記処理液槽５に処理液を供
給するもので、４つのＰＦＡ製給液槽２０ａ，２０ｂ，
２０ｃ，２０ｄを備えてなり、後述する３種類の処理液
のいずれかを選択的に供給する構成とされている。The liquid supply section 2 supplies the processing liquid to the processing liquid tank 5, and includes four PFA liquid supply tanks 20a, 20b,
20c and 20d, and is configured to selectively supply any one of three types of processing liquids described later.
【００２２】具体的には、第１の給液槽２０ａは、アン
モニア水（ＮＨ4 ＯＨ＋純水）が満たされるとともに、
ヒータ２１ａ、温度センサ２２ａおよび液面を確認する
空焚き防止用センサ２３ａを備える。第２の給液槽２０
ｂは、塩酸（ＨＣｌ＋純水）が満たされるとともに、ヒ
ータ２１ｂおよび温度センサ２２ｂおよび液面を確認す
る空焚き防止用センサ２３ｂを備える。第３の給液槽２
０ｃは、フッ酸（ＨＦ＋純水）またはバッファードフッ
酸（ＢＨＦ＋純水）が満たされている。また、第４の給
液槽２０ｄは、過酸化水素水（Ｈ2 Ｏ2 ）が満たされて
いる。Specifically, the first liquid supply tank 20a is filled with ammonia water (NH 4 OH + pure water).
The apparatus includes a heater 21a, a temperature sensor 22a, and a sensor 23a for preventing empty firing for checking the liquid level. Second liquid supply tank 20
b is filled with hydrochloric acid (HCl + pure water), and is provided with a heater 21b, a temperature sensor 22b, and an empty heating prevention sensor 23b for checking the liquid level. Third liquid supply tank 2
0c is filled with hydrofluoric acid (HF + pure water) or buffered hydrofluoric acid (BHF + pure water). The fourth liquid supply tank 20d is filled with a hydrogen peroxide solution (H 2 O 2 ).
【００２３】各給液槽２０ａ〜２０ｄには、循環ポンプ
２５ａおよびフィルタ２５ｂからなる濾過循環路２５が
それぞれ設けられており、これらに満たされた各洗浄液
は、循環弁２６ａ，２６ｂを介して、常時ないしは定期
的にフィルトレーションが行われ、そのクリーン度が保
たれる。Each of the liquid supply tanks 20a to 20d is provided with a filtration circulation path 25 including a circulation pump 25a and a filter 25b, and the cleaning liquid filled therein is passed through circulation valves 26a and 26b. Filtration is performed constantly or periodically, and the cleanness is maintained.
【００２４】また、第１ないし第３の給液槽２０ａ〜２
０ｃはそれぞれ、その底部が上記給液弁１０ａ〜１０ｃ
を介して給液配管７に連結されるとともに、第４の給液
槽２０ｄは、上記濾過循環路２５の途中箇所がバイパス
管２７を介して第１の給液槽２０ａと第２の給液槽２０
ｂへそれぞれ連結されている。２８ａ〜２８ｃは上記バ
イパス管２７に配された給液弁を示している。The first to third liquid supply tanks 20a to 20a-2
0c is the bottom of the liquid supply valves 10a to 10c, respectively.
The fourth liquid supply tank 20d is connected to the first liquid supply tank 20a and the second liquid supply tank 20d through the bypass pipe 27 at an intermediate point of the filtration circulation path 25. Vessel 20
b. Numerals 28a to 28c indicate liquid supply valves arranged in the bypass pipe 27.
【００２５】なお、図示例においては、装置構造の簡素
化、コンパクト化の目的で、各給液槽２０ａ〜２０ｄが
上記処理液槽５の高さ方向上方位置に配置されて、これ
ら給液槽から処理液槽５への給液が重力落下式で行われ
る構造とされているが、給液ポンプ等（図示省略）によ
る強制給液方式を採用することも可能である。In the illustrated example, the liquid supply tanks 20a to 20d are arranged at positions above the processing liquid tank 5 in the height direction for the purpose of simplifying and compacting the apparatus structure. Although the structure is such that the liquid is supplied to the processing liquid tank 5 from the container by a gravity drop method, a forced liquid supply method using a liquid supply pump or the like (not shown) may be adopted.
【００２６】しかして、給液部２における処理液槽５へ
の処理液供給は、ＨＦ液またはＢＨＦ液、ＳＣ−１（Ｎ
Ｈ4 ＯＨ＋Ｈ2 Ｏ2 ＋純水）液あるいはＳＣ−２（ＨＣ
ｌ＋Ｈ2 Ｏ2 ＋純水）液の３種類のいずれかが、以下の
要領で選択的に行われる。The supply of the processing liquid to the processing liquid tank 5 in the liquid supply unit 2 is performed by using the HF liquid or the BHF liquid, SC-1 (N
H 4 OH + H 2 O 2 + pure water) solution or SC-2 (HC
1 + H 2 O 2 + pure water) liquid is selectively performed in the following manner.
【００２７】すなわち、ＨＦ液またはＢＨＦ液の場合、
給液弁１０ａ，１０ｂおよび１０ｄが閉止されるととも
に、給液弁１０ｃが開放され、これによりＨＦ液または
ＢＨＦ液が、第３の給液槽２０ｃから重力落下で、給液
配管７を介して処理液槽５へ供給される。That is, in the case of HF solution or BHF solution,
The liquid supply valves 10a, 10b and 10d are closed, and the liquid supply valve 10c is opened, whereby the HF liquid or the BHF liquid drops by gravity from the third liquid supply tank 20c via the liquid supply pipe 7. It is supplied to the processing liquid tank 5.
【００２８】また、ＳＣ−１液の場合、まず、第４の給
液槽２０ｄの過酸化水素水（Ｈ2 Ｏ2 ）がバイパス管２
７を介して第１の給液槽２０ａへ供給されて、この中の
アンモニア水（ＮＨ4 ＯＨ＋純水）と所定混合比率（例
えば１：１：５）で混合されてＳＣ−１液とされるとと
もに、ヒータ２１ａにより所定温度（例えば８０℃）ま
で加熱される。続いて、給液弁１０ｂ，１０ｃおよび１
０ｄが閉止されるとともに、給液弁１０ａが開放され、
これによりＳＣ−１液が、第１の給液槽２０ａから重力
落下で、給液配管７を介して処理液槽５へ供給される。In the case of the SC-1 solution, first, the hydrogen peroxide solution (H 2 O 2 ) in the fourth supply tank 20 d is supplied to the bypass pipe 2.
7 and is supplied to the first liquid supply tank 20a, and is mixed with the ammonia water (NH 4 OH + pure water) therein at a predetermined mixing ratio (for example, 1: 1: 5) to form the SC-1 liquid. At the same time, it is heated to a predetermined temperature (for example, 80 ° C.) by the heater 21a. Subsequently, the liquid supply valves 10b, 10c and 1
0d is closed, and the liquid supply valve 10a is opened,
Thus, the SC-1 solution is supplied from the first liquid supply tank 20a to the processing liquid tank 5 via the liquid supply pipe 7 by gravity.
【００２９】さらに、ＳＣ−２液の場合、ＳＣ−１液と
同様、まず、第４の給液槽２０ｄの過酸化水素水（Ｈ2
Ｏ2 ）がバイパス管２７を介して第２の給液槽２０ｂへ
供給されて、この中の塩酸（ＨＣｌ＋純水）と所定混合
比率（例えば１：１：５）で混合されてＳＣ−２液とさ
れるとともに、ヒータ２１ｂにより所定温度（例えば８
０℃）まで加熱される。続いて、給液弁１０ａ，１０ｃ
および１０ｄが閉止されるとともに、給液弁１０ｂが開
放され、これによりＳＣ−２液が、第１の給液槽２０ｂ
から重力落下で、給液配管７を介して処理液槽５へ供給
される。Further, in the case of the SC-2 solution, similarly to the SC-1 solution, first, the hydrogen peroxide solution (H 2 H 2) in the fourth liquid supply tank 20d is used.
O 2 ) is supplied to the second liquid supply tank 20b via the bypass pipe 27, and is mixed with hydrochloric acid (HCl + pure water) therein at a predetermined mixing ratio (for example, 1: 1: 5) to form SC-2. And a predetermined temperature (for example, 8
0 ° C). Subsequently, the liquid supply valves 10a and 10c
And 10d are closed, and the liquid supply valve 10b is opened, whereby the SC-2 liquid is supplied to the first liquid supply tank 20b.
Is supplied to the processing liquid tank 5 through the liquid supply pipe 7 by gravity.
【００３０】排液部３は、上記処理液槽５からの排液を
回収するもので、３つのＰＦＡ製排液回収槽、つまりＨ
Ｃｌ用の第１の排液回収槽３０ａ、ＮＨ4 ＯＨ用の第２
の排液回収槽３０ｂ、およびＨＦ（またはＢＨＦ）用の
第３の排液回収槽３０ｃを備えてなる。これら排液回収
槽３０ａ〜３０ｃには、前記排液配管８に排出される排
液が、前記２つの切換弁１３ａ，１３ｂにより選択的に
回収される構成とされている。また、各排液回収槽３０
ａ〜３０ｃには、液面を確認して警報ブザー（図示省
略）と連動する満杯検知用センサ３１ａ〜３１ｃがそれ
ぞれ設けられている。The drainage section 3 collects the drainage from the processing liquid tank 5 and has three PFA drainage recovery tanks, ie, H
First drain collection tank 30a for Cl, second drain collection tank for NH 4 OH
And a third effluent recovery tank 30c for HF (or BHF). In these drainage recovery tanks 30a to 30c, the drainage discharged to the drainage pipe 8 is selectively recovered by the two switching valves 13a and 13b. In addition, each drainage collection tank 30
Each of the sensors a to 30c is provided with sensors 31a to 31c for detecting the liquid level and operating in conjunction with an alarm buzzer (not shown).
【００３１】なお、図示例においては、前述のごとく装
置構造の簡素化、コンパクト化の目的で、各排液回収槽
３０ａ〜３０ｃが上記処理液槽５の高さ方向下方位置に
配置されて、この処理液槽５から各排液回収槽３０ａ〜
３０ｃへの排液が重力落下式で行われる構造とされてい
るが、排液ポンプ等（図示省略）による強制排液方式を
採用することも可能である。In the illustrated example, as described above, for the purpose of simplifying and compacting the structure of the apparatus, each of the drainage recovery tanks 30a to 30c is disposed below the processing liquid tank 5 in the height direction. Each of the drainage recovery tanks 30a to 30a to
Although the drainage to 30c is performed by a gravity drop method, a forced drainage method using a drainage pump or the like (not shown) may be employed.
【００３２】制御部４は、具体的にはＣＰＵ，ＲＯＭお
よびＲＡＭなどを主要部として備えるマイクロコンピュ
ータからなり、以下の洗浄工程を実行すべく所定のプロ
グラムに従って、前述した処理液部１、給液部２および
排液部３の各構成装置を自動制御するように構成されて
いる。The control unit 4 is composed of a microcomputer having a CPU, a ROM, a RAM, and the like as main components, and according to a predetermined program for executing the following cleaning process, the processing liquid unit 1 and the liquid supply unit. The components of the section 2 and the drain section 3 are configured to be automatically controlled.
【００３３】次に、以上のように構成された洗浄装置に
おける洗浄工程について説明する。Next, a description will be given of a cleaning step in the cleaning apparatus configured as described above.
【００３４】(1) 前工程から搬入されるウェハＷ，Ｗ，
…を、手作業でまたは搬入ロボット（図示省略）により
自動で、処理液槽５内の基板保持部に保持させて収納し
た後、この処理液槽５を密封する。(1) Wafers W, W,
Are held in the substrate holding section in the processing liquid tank 5 manually or automatically by a loading robot (not shown) and stored, and then the processing liquid tank 5 is sealed.
【００３５】(2) 処理液槽５内に、前述した３種類の洗
浄液を順次置換しながら充填供給して、ウェハＷ，Ｗ，
…に洗浄処理を施す。本例においては、ＨＦ液（または
ＢＨＦ液）処理→ＳＣ−１液処理→ＳＣ−２液処理の順
で洗浄工程が行われる。(2) The above-mentioned three types of cleaning liquids are filled and supplied into the processing liquid tank 5 while sequentially replacing the three kinds of cleaning liquids.
Are subjected to a cleaning treatment. In this example, the cleaning process is performed in the order of HF solution (or BHF solution) treatment → SC-1 solution treatment → SC-2 solution treatment.
【００３６】 ＨＦ液（またはＢＨＦ液）による洗浄
処理:給液弁１０ａ，１０ｂおよび１０ｄが閉止された
状態で、給液弁１０ｃが開放されて、ＨＦ液（またはＢ
ＨＦ液）が、第３の給液槽２０ｃから給液配管７を介し
て、処理液槽５の底部５ａから供給充填される。この
後、給液弁１０ｃが閉止されて、ＨＦ液洗浄が所定時間
だけ行われる。 Washing with HF solution (or BHF solution)
Processing: With the liquid supply valves 10a, 10b and 10d closed, the liquid supply valve 10c is opened and the HF liquid (or B
HF solution) is supplied from the third liquid supply tank 20 c via the liquid supply pipe 7 and supplied from the bottom 5 a of the processing liquid tank 5. Thereafter, the liquid supply valve 10c is closed, and the HF liquid cleaning is performed for a predetermined time.
【００３７】 純水による水洗処理：ＨＦ液（または
ＢＨＦ液）による洗浄時間がタイムアップすると、給液
弁１０ｄが開放されて、純水が、純水供給源から給液配
管７を介して、処理液槽５の底部５ａから供給され、処
理液槽５内のＨＦ液（またはＢＨＦ液）を下側から上方
へ向けて排液配管８へ押し出す。そして、処理液槽５内
のＨＦ液（またはＢＨＦ液）が、純水により希釈されつ
いには純水に完全に置換された後、この純水による水洗
処理が所定時間だけ行われる。Rinsing treatment with pure water: When the cleaning time with the HF liquid (or BHF liquid) has timed out, the liquid supply valve 10d is opened, and pure water is supplied from the pure water supply source through the liquid supply pipe 7, The HF liquid (or BHF liquid) supplied from the bottom 5a of the processing liquid tank 5 and pushed out of the processing liquid tank 5 is pushed out from the lower side to the drain pipe 8 upward. Then, after the HF liquid (or BHF liquid) in the processing liquid tank 5 is diluted with pure water and finally completely replaced with pure water, the water washing treatment with the pure water is performed for a predetermined time.
【００３８】一方、排液配管８へ排出されるＨＦ液（ま
たはＢＨＦ液）とこれに続く純水は、それぞれ切換弁１
３ａを介して、排液回収槽３０ｃへ回収されるととも
に、排水部へ排水される。On the other hand, the HF liquid (or BHF liquid) discharged to the drain pipe 8 and the pure water following the HF liquid are respectively supplied to the switching valve 1.
The liquid is collected in the drainage collection tank 30c via the drain 3a and drained to the drainage section.
【００３９】 ＳＣ−１液による洗浄処理：純水によ
る洗浄時間がタイムアップすると、給液弁１０ｄが閉止
されるとともに、給液弁１０ａが開放される。すると、
前述のごとく所定混合比率で調整、加熱されたＳＣ−１
液が、第１の給液槽２０ａから給液配管７を介して、処
理液槽５の底部５ａから供給され、処理液槽５内の純水
を下側から上方へ向けて排液配管８へ押し出す。そし
て、処理液槽５内の純水がＳＣ−１液に完全に置換され
た後、給液弁１０ａが閉止されて、ＳＣ−１液による洗
浄処理が所定時間だけ行われる。 Cleaning process with SC-1 solution : When the time for cleaning with pure water is up, the liquid supply valve 10d is closed and the liquid supply valve 10a is opened. Then
SC-1 adjusted and heated at a predetermined mixing ratio as described above
The liquid is supplied from the first liquid supply tank 20a through the liquid supply pipe 7 from the bottom 5a of the processing liquid tank 5, and the pure water in the processing liquid tank 5 is drained upward from below to the drain pipe 8 Push out. Then, after the pure water in the processing liquid tank 5 is completely replaced with the SC-1 liquid, the liquid supply valve 10a is closed, and the cleaning process using the SC-1 liquid is performed for a predetermined time.
【００４０】この場合、外槽６内の純水も、ヒータ１５
により上記ＳＣ−１液と同温度（例えば８０℃）まで加
熱されて、処理液槽５内のＳＣ−１液を保温する。一
方、排液配管８へ排出される純水とこれに続くＳＣ−１
液は、それぞれ切換弁１３ａ，１３ｂを介して、排水部
へ排水されるとともに、排液回収槽３０ｂへ回収され
る。In this case, the pure water in the outer tank 6 is also supplied to the heater 15.
Thus, the SC-1 solution is heated to the same temperature as that of the SC-1 solution (for example, 80 ° C.) to keep the SC-1 solution in the treatment liquid tank 5 warm. On the other hand, pure water discharged to the drainage pipe 8 and SC-1
The liquid is drained to the drain through the switching valves 13a and 13b, respectively, and is collected in the drain collection tank 30b.
【００４１】 純水による水洗処理：ＳＣ−１による
洗浄時間がタイムアップすると、給液弁１０ｄが開放さ
れて、工程と同様に、処理液槽５内のＳＣ−１液が、
純水により希釈されついには純水に完全に置換された
後、純水による水洗処理が所定時間だけ行われる。 Rinse treatment with pure water: When the washing time with SC-1 has timed out, the liquid supply valve 10d is opened, and the SC-1 liquid in the treatment liquid tank 5 is removed as in the process.
After being diluted with pure water and finally completely replaced with pure water, a washing process with pure water is performed for a predetermined time.
【００４２】一方、排液配管８へ排出されるＳＣ−１液
とこれに続く純水は、それぞれ切換弁１３ａ，１３ｂを
介して、排液回収槽３０ｂへ回収されるとともに、排水
部へ排水される。On the other hand, the SC-1 solution discharged to the drainage pipe 8 and the pure water following the SC-1 are recovered to the drainage recovery tank 30b via the switching valves 13a and 13b, respectively, and are drained to the drainage section. Is done.
【００４３】 ＳＣ−２液による洗浄処理：純水によ
る洗浄時間がタイムアップすると、給液弁１０ｄが閉止
されるとともに、給液弁１０ｂが開放される。すると、
前述のごとく所定混合比率で調整、加熱されたＳＣ−２
液が、第２の給液槽２０ｂから給液配管７を介して、処
理液槽５の底部５ａから供給され、処理液槽５内の純水
を下側から排液配管８へ押し出す。そして、処理液槽５
内の純水がＳＣ−２液に完全に置換された後、給液弁１
０ｂが閉止されて、ＳＣ−２液による洗浄処理が所定時
間だけ行われる。 Cleaning process with SC-2 solution : When the time for cleaning with pure water is up, the liquid supply valve 10d is closed and the liquid supply valve 10b is opened. Then
SC-2 adjusted and heated at a predetermined mixing ratio as described above
The liquid is supplied from the second liquid supply tank 20b through the liquid supply pipe 7 from the bottom 5a of the processing liquid tank 5, and pushes out the pure water in the processing liquid tank 5 to the drain pipe 8 from below. And the processing liquid tank 5
After the pure water inside is completely replaced with SC-2 liquid, the liquid supply valve 1
0b is closed, and the cleaning process with the SC-2 solution is performed for a predetermined time.
【００４４】この場合、工程と同様に、処理液槽５内
のＳＣ−１液は外槽６内の純水（温水）により保温され
る。一方、排液配管８へ排出される純水とこれに続くＳ
Ｃ−２液は、それぞれ切換弁１３ａ，１３ｂを介して、
排水部へ排水されるとともに、排液回収槽３０ａへ回収
される。In this case, similarly to the process, the SC-1 solution in the processing solution tank 5 is kept warm by pure water (warm water) in the outer tank 6. On the other hand, pure water discharged to the drainage pipe 8 and S
The liquid C-2 passes through the switching valves 13a and 13b, respectively.
The water is drained to the drainage section and collected in the drainage collection tank 30a.
【００４５】 純水による水洗処理：ＳＣ−２による
洗浄時間がタイムアップすると、給液弁１０ｄが開放さ
れて、工程と同様に、処理液槽５内のＳＣ−２液が、
純水により希釈されついには純水に完全に置換された
後、純水による水洗処理が所定時間だけ行われる。 Rinse treatment with pure water: When the time for washing with SC-2 is up, the liquid supply valve 10d is opened, and the SC-2 liquid in the treatment liquid tank 5 is discharged as in the process.
After being diluted with pure water and finally completely replaced with pure water, a washing process with pure water is performed for a predetermined time.
【００４６】一方、排液配管８へ排出されるＳＣ−２液
とこれに続く純水は、それぞれ切換弁１３ａ，１３ｂを
介して、排液回収槽３０ａへ回収されるとともに、排水
部へ排水される。On the other hand, the SC-2 solution discharged to the drainage pipe 8 and the pure water following the SC-2 are recovered to the drainage recovery tank 30a via the switching valves 13a and 13b, respectively, and drained to the drainage section. Is done.
【００４７】(3) 上記洗浄工程(2) 〜の洗浄工程が
すべて完了したら、給液弁１０ｄが閉止されるととも
に、給液配管７の排液弁１１が開放され、同時に窒素ガ
スが、不活性ガス導入管９からチェック弁９ａを介して
処理液槽５の頂部５ｂから導入されて、処理液槽５内の
純水を上側から下方へ向けて押し出し、これを排液弁１
１を介して排水する。最後に、この窒素雰囲気にてウェ
ハＷ，Ｗ，…を乾燥処理した後、処理液槽５の密封状態
を解除して、ウェハＷ，Ｗ，…を、手作業でまたは搬出
ロボット（図示省略）により自動で、処理液槽５内の基
板保持部から取り出し、次工程へ搬出する。(3) When all of the above cleaning steps (2) to (5) are completed, the liquid supply valve 10d is closed, and the drainage valve 11 of the liquid supply pipe 7 is opened. The pure water in the processing liquid tank 5 is introduced from the top 5b of the processing liquid tank 5 through the active gas introduction pipe 9 via the check valve 9a, and is pushed out from the upper side to the lower side.
Drain through 1. Finally, after the wafers W, W,... Are dried in the nitrogen atmosphere, the sealed state of the processing liquid tank 5 is released, and the wafers W, W,. Automatically take out from the substrate holding part in the processing liquid tank 5 and carry it out to the next step.
【００４８】しかして、このような洗浄工程を経ること
により、ウェハＷ，Ｗ，…は、処理液槽５に対する出し
入れ時以外は、酸素を除外した雰囲気で洗浄処理される
こととなり、この結果、ウェハＷ，Ｗ，…と酸素の接触
が最少限に抑えられて、ウェハ表面への自然酸化膜の生
成が有効に防止される。By performing such a cleaning step, the wafers W, W,... Are cleaned in an atmosphere excluding oxygen except when the wafer W is taken in and out of the processing liquid tank 5, and as a result, The contact between the wafers W, W,... And oxygen is minimized, and the formation of a natural oxide film on the wafer surface is effectively prevented.
【００４９】また、上記ウェハＷ，Ｗ，…の出し入れ作
業は、処理液槽５内に洗浄液がない状態で行われるた
め、これらウェハＷ，Ｗ，…表面を、大気と洗浄液の境
界面つまり気−液界面が移動することもなく、従来問題
となっていたこの界面部に存在するパーティクル等の汚
染物質の付着も全くない。Since the above-mentioned operations for taking in and out the wafers W, W,... Are performed without the cleaning liquid in the processing liquid tank 5, the surfaces of these wafers W, W,. -The liquid interface does not move, and there is no adhesion of contaminants such as particles existing at the interface, which has been a problem in the past.
【００５０】さらに、構造的にも、単一の処理液槽５の
みで複数種類の洗浄液による処理が可能なため、従来の
この種装置に比較して、装置自体が小型かつ簡素とな
り、製品コストが低減される。Further, in terms of structure, since the processing can be performed with a plurality of types of cleaning liquids using only a single processing liquid tank 5, the apparatus itself is smaller and simpler than conventional apparatuses of this type, and the product cost is reduced. Is reduced.
【００５１】実施例２ 本例は図２に示し、処理液部１の構成において、排液弁
１１からの排液配管１１ｂと処理液槽５上部からの排液
配管８が、切換弁１３ｃを介して上記切換弁１３ａに連
結されて、実施例１における純水の供給に先立って、窒
素ガスが洗浄液置換用に導入される構成とされたもので
ある。Embodiment 2 This embodiment is shown in FIG. 2. In the configuration of the processing liquid section 1, the drain pipe 11b from the drain valve 11 and the drain pipe 8 from the upper part of the processing tank 5 are connected to the switching valve 13c. The switching valve 13a is connected via the switching valve 13a to supply nitrogen gas for replacing the cleaning liquid prior to the supply of pure water in the first embodiment.
【００５２】すなわち、前述した実施例１の洗浄工程
（2)の，またはの各工程において、洗浄液（ＨＦ
液（またはＢＨＦ液）、ＳＣ−１液あるいはＳＣ−２
液）による洗浄時間がタイムアップすると、排液弁１１
が開放されるとともに、窒素ガスが、不活性ガス導入管
９のチェック弁９ａを介して、処理液槽５の頂部５ｂか
ら導入される。That is, in the or each of the cleaning steps (2) of the first embodiment, the cleaning liquid (HF
Solution (or BHF solution), SC-1 solution or SC-2
When the cleaning time by the liquid) increases, the drain valve 11
Is opened, and nitrogen gas is introduced from the top 5b of the processing liquid tank 5 through the check valve 9a of the inert gas introduction pipe 9.
【００５３】これにより、処理液槽５内の洗浄液は、下
方へ押し出されて上記排液弁１１から排液配管１１ｂへ
排液され、切換弁１３ｃさらには切換弁１３ａ，１３ｂ
を介して、排液部３のいずれかの排液回収槽３０ａ，３
０ｂまたは３０ｃへ回収される。As a result, the cleaning liquid in the processing liquid tank 5 is pushed downward and drained from the drain valve 11 to the drain pipe 11b, and is switched to the switching valve 13c and further to the switching valves 13a and 13b.
Through one of the drainage collection tanks 30a, 30
Collected to 0b or 30c.
【００５４】このようにして、洗浄液が完全に処理液槽
５から排出されると、窒素ガスの供給が止められるとと
もに、上記排液弁１１が閉止され、続いて給液弁１０ｄ
が開放されて、純水が給液配管７を介して処理液槽５内
へ供給され、純水による水洗処理が所定時間だけ行われ
る。その他の構成および作用は実施例１と同様である。When the cleaning liquid is completely discharged from the processing liquid tank 5, the supply of nitrogen gas is stopped, and the drain valve 11 is closed.
Is opened, pure water is supplied into the treatment liquid tank 5 through the liquid supply pipe 7, and the water washing process with pure water is performed for a predetermined time. Other configurations and operations are the same as those of the first embodiment.
【００５５】しかして、このように窒素等の不活性ガス
を用いて洗浄液を置換することにより、各洗浄液が希釈
されることがないため、実施例１における希釈分だけラ
ンニングコストがさらに低減される。Since the cleaning liquid is replaced with an inert gas such as nitrogen as described above, each cleaning liquid is not diluted, so that the running cost is further reduced by the dilution in the first embodiment. .
【００５６】また、排液部３に回収された洗浄液は、所
定のフィルトレーションを行ってそのクリーン度を増し
てから、後給液部２へ還流させることにより、実施例１
では不可能であった洗浄液の再利用も可能となる。Further, the cleaning liquid collected in the drain section 3 is subjected to a predetermined filtration to increase the cleanliness thereof, and then is returned to the post-supply section 2 so as to be used in the first embodiment.
It is also possible to reuse the cleaning solution that was not possible.
【００５７】実施例３ 本例は図３に示し、処理液部１の処理液槽５に、排気弁
４０と真空ポンプ４１を備えた減圧回路４２が連結され
て、実施例１における洗浄工程(2) が減圧雰囲気下で行
われる構成とされたものである。Embodiment 3 This embodiment is shown in FIG. 3, in which the processing liquid tank 5 of the processing liquid section 1 is connected to a decompression circuit 42 equipped with an exhaust valve 40 and a vacuum pump 41. 2) is performed in a reduced pressure atmosphere.
【００５８】すなわち、ウェハＷ，Ｗ，…を処理液槽５
内に収納保持して密封した後、排気弁４０が開放され
て、処理液槽５内が上記真空ポンプ４１により一旦排気
減圧されてから、排気弁４０が再び閉止され、続いて実
施例１における洗浄工程(2) が行われる。That is, the wafers W, W,.
After being housed and sealed inside, the exhaust valve 40 is opened, the inside of the processing liquid tank 5 is once evacuated and depressurized by the vacuum pump 41, and then the exhaust valve 40 is closed again. A cleaning step (2) is performed.
【００５９】しかして、このような減圧雰囲気下でウェ
ハＷ，Ｗ，…の洗浄処理が行われることにより、ウェハ
Ｗ，Ｗ，…表面における微細な溝内も確実に洗浄される
こととなる。その他の構成および作用は実施例１と同様
である。By performing the cleaning process on the wafers W, W,... Under such reduced-pressure atmosphere, the inside of the fine grooves on the surfaces of the wafers W, W,. Other configurations and operations are the same as those of the first embodiment.
【００６０】なお、上述した実施例はあくまでも本発明
の好適な具体例を示すものであって、本発明はこれに限
定されて解釈されるべきでなく、その要旨の範囲内で種
々設計変更可能である。例えば、使用される洗浄液の種
類や数、あるいはそれら洗浄液による処理順序も、図示
例に限定されることなく、目的に応じて種々変更可能で
ある。It should be noted that the above-described embodiments merely show preferred specific examples of the present invention, and the present invention should not be construed as being limited thereto, and various design changes can be made within the scope of the invention. It is. For example, the type and number of cleaning liquids to be used, or the order of processing with the cleaning liquids are not limited to the illustrated examples, and can be variously changed according to the purpose.
【００６１】また、図示例においては、ウェハＷを複数
枚まとめて洗浄するバッチ式の洗浄構造とされている
が、ウェハＷを１枚ずつ洗浄する枚葉式構造にも本発明
が適用できることはもちろんである。In the illustrated example, a batch type cleaning structure for cleaning a plurality of wafers W at a time is used. However, the present invention can be applied to a single wafer type structure for cleaning wafers W one by one. Of course.
【００６２】[0062]
【発明の効果】以上詳述したように、本発明によれば、
ウェハを単一の密封処理液槽内に収納保持して、複数種
類の処理液を不活性ガスを用いて順次置換しながらウェ
ハを洗浄処理するようにしたから、つまり完全なクロー
ズド系でウェハの洗浄処理を行うようにしたから、以下
に列挙するような種々の特有の効果が得られる。As described in detail above, according to the present invention,
Since the wafers are stored and held in a single sealed processing solution tank, and the wafers are cleaned while sequentially replacing a plurality of types of processing solutions with an inert gas , that is, the wafers are completely closed. Since the cleaning process is performed, various specific effects as listed below can be obtained.
【００６３】(1) 酸素を除外した雰囲気でのウェハ処理
が実現して、ウェハと酸素との接触が最少限に抑えら
れ、ウェハ表面への自然酸化膜の生成が有効に防止され
る。(1) Wafer processing in an atmosphere excluding oxygen is realized, contact between the wafer and oxygen is minimized, and formation of a natural oxide film on the wafer surface is effectively prevented.
【００６４】(2) 上記ウェハの出し入れ作業を、処理液
槽内に洗浄液がない状態で行うことができるため、これ
らウェハの表面上を、大気と洗浄液の境界面（気−液界
面）が移動することもなく、従来問題となっていた境界
面部分に存在するパーティクル等の汚染物質の付着によ
る汚染も全くない。(2) Since the above-mentioned wafer loading / unloading operation can be performed without the cleaning liquid in the processing liquid tank, the boundary surface (air-liquid interface) between the atmosphere and the cleaning liquid moves on the surface of these wafers. In addition, there is no contamination due to the attachment of contaminants such as particles existing on the boundary surface, which has conventionally been a problem.
【００６５】(3) 単一の処理液槽ですべてのウェハ処理
工程を行うことにより、装置自体の簡素化、小型化を図
ることができ、経済的な処理システムを構成することが
可能となり、さらには、この湿式処理工程をその前後の
工程に複合的に組合せてマルチシステム化した、いわゆ
るマルチチェンバシステムの実現が可能となる。(3) By performing all wafer processing steps in a single processing liquid tank, the apparatus itself can be simplified and downsized, and an economical processing system can be constructed. Further, it is possible to realize a so-called multi-chamber system in which the wet processing step is combined with the preceding and following steps in a complex manner to form a multi-system.
【００６６】(4) クローズド系でウェハを処理すること
により、装置全体をクリーン化する必要がなく、この点
でも装置の簡素化、小型化が可能である。(4) By processing a wafer in a closed system, it is not necessary to clean the entire apparatus, and in this regard, the apparatus can be simplified and downsized.
【図１】本発明に係る実施例１である基板の湿式洗浄装
置全体の概略構成を示す図である。FIG. 1 is a diagram illustrating a schematic configuration of an entire wet cleaning apparatus for a substrate according to a first embodiment of the present invention.
【図２】本発明に係る実施例２である基板の湿式洗浄装
置全体の処理液部の概略構成を示す図である。FIG. 2 is a view showing a schematic configuration of a processing liquid portion of the entire wet cleaning apparatus for a substrate according to a second embodiment of the present invention.
【図３】本発明に係る実施例３である基板の湿式洗浄装
置全体の処理液部の概略構成を示す図である。FIG. 3 is a diagram illustrating a schematic configuration of a processing liquid part of the entire wet cleaning apparatus for a substrate according to a third embodiment of the present invention.
【符号の説明】 Ｗ ウェハ １ 処理液部 ２ 給液部 ３ 排液部 ４ 制御部 ５ 処理液槽 ５ａ 処理液槽の底部 ５ｂ 処理液槽の頂部 ６ 外槽 ７ 給液配管 ８ 排液配管 ９ 不活性ガス導入管 １６ 給水管 ２０ａ〜２０ｄ 給液槽 ２３ａ〜２３ｃ 排液回収槽 ４２ 減圧回路[Description of Signs] W Wafer 1 Processing liquid part 2 Liquid supply part 3 Drainage part 4 Control part 5 Processing liquid tank 5a Bottom part of processing liquid tank 5b Top of processing liquid tank 6 Outer tank 7 Liquid supply pipe 8 Drainage pipe 9 Inert gas introduction pipe 16 Water supply pipe 20a to 20d Liquid supply tank 23a to 23c Drainage recovery tank 42 Pressure reducing circuit
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭61−295622（ＪＰ，Ａ) 特開 平３−62521（ＪＰ，Ａ) 特開 平３−200327（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/304 642 H01L 21/306 B08B 3/04 ────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-61-295622 (JP, A) JP-A-3-62521 (JP, A) JP-A-3-200327 (JP, A) (58) Investigation Field (Int.Cl. 7 , DB name) H01L 21/304 642 H01L 21/306 B08B 3/04
Claims (4)
する湿式処理方法であって、 密封された単一の処理液槽内に基板を収納し、この処理
液槽内に複数種類の処理液を順次置換しながら充填供給
して処理するとともに、 先行する処理液から後行する処理液への置換に際して、
置換用の不活性ガスを上記処理液槽内に充填供給しなが
ら先行する処理液を押出し排除し、続いて水洗用の純水
を上記処理液槽内に充填供給して水洗処理した後、後行
する処理液を上記処理液槽内に充填供給しながら上記純
水を押し出し排除するようにした ことを特徴とする基板
の湿式処理方法。1. A wet processing method for processing a substrate with a plurality of types of processing liquids, wherein the substrate is housed in a single sealed processing liquid tank, and a plurality of types of processing liquids are stored in the processing liquid tank. In addition to performing the filling and supplying while sequentially replacing the processing liquid, when replacing the preceding processing liquid with the following processing liquid,
Filling and supplying the inert gas for replacement into the processing liquid tank
Extrude and remove the preceding processing solution, and then use pure water for washing.
After filling and supplying the above treatment liquid in the treatment liquid tank and washing with water,
Filling and supplying the processing liquid to be processed into the processing liquid tank
A wet processing method for a substrate, wherein water is extruded and eliminated .
の処理液槽内を一旦減圧してから、処理液による処理工
程を開始することを特徴とする請求項１に記載の基板の
湿式処理方法。Wherein after storing the substrate in the treating solution tank, the processing solution tank is once reduced pressure, the substrate according to claim 1, characterized in that to start the process with a processing solution Wet processing method.
処理液をアップフローさせることを特徴とする請求項１
または２に記載の基板の湿式処理方法。3. In the processing step using each of the processing liquids,
Claim 1, characterized in that for upflow treatment liquid
Or the wet processing method of a substrate according to 2 .
する湿式処理装置であって、 密封可能な単一の処理液槽と、この処理液槽に複数の処
理液を選択的に供給する給液部とを備えてなり、 上記処理液槽は、その底部に上記給液部の給液配管が連
結されるとともに、その頂部に排液配管が連結され、 上記処理液槽内に、基板を直接保持する基板保持部が設
けられていることを特徴とする基板の湿式処理装置。4. A wet processing apparatus for processing a substrate with a plurality of types of processing solutions, comprising: a single hermetically sealable processing solution tank; A liquid part, wherein the processing liquid tank is connected to a liquid supply pipe of the liquid supply part at a bottom thereof, and a drainage pipe is connected to a top part thereof. A wet processing apparatus for a substrate, comprising a substrate holding portion for directly holding the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07512193A JP3334227B2 (en) | 1993-03-08 | 1993-03-08 | Substrate wet processing method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07512193A JP3334227B2 (en) | 1993-03-08 | 1993-03-08 | Substrate wet processing method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06260469A JPH06260469A (en) | 1994-09-16 |
| JP3334227B2 true JP3334227B2 (en) | 2002-10-15 |
Family
ID=13567058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP07512193A Expired - Fee Related JP3334227B2 (en) | 1993-03-08 | 1993-03-08 | Substrate wet processing method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3334227B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111446188A (en) * | 2020-05-12 | 2020-07-24 | 天津中环领先材料技术有限公司 | Semiconductor silicon wafer surface cleaning mechanism and cleaning process thereof |
-
1993
- 1993-03-08 JP JP07512193A patent/JP3334227B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111446188A (en) * | 2020-05-12 | 2020-07-24 | 天津中环领先材料技术有限公司 | Semiconductor silicon wafer surface cleaning mechanism and cleaning process thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06260469A (en) | 1994-09-16 |
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