JP3327328B2 - High and low temperature inspection method for IC wafer and probe card holder with heat shield plate. - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probing apparatus (hereinafter referred to as a "prober"), and more particularly, to a method and a probe card holder for inspecting an IC wafer at high and low temperatures.

[0002]

2. Description of the Related Art Conventionally, when testing an IC wafer in a high temperature state using a prober, as a method, generally, a wafer chuck is heated by a heater or the like, and the IC wafer is heated to a high temperature by heat conduction. In this case, when the temperature of the wafer chuck becomes high, the convection heat is transmitted, so that the probe card is deformed and the height of the probe needles set on the probe card varies. As a countermeasure, a probe card for a high temperature test has been proposed in JP-A-7-35775. As shown in FIG. 9, this probe card has a plate for preventing convection heat transfer on a needle stand of a probe card 300 '.
This is a structure having a member 900 for suppressing the warpage of the probe card.

[0003]

In the conventional probe card, in the case of the above-mentioned Japanese Patent Application Laid-Open No. 7-35775, the first problem is that the convective heat transfer preventing plate 1000 is provided as means for avoiding heat transfer. However, the plate 1000 is provided on the probe card 300 ', and the convective heat accumulated in the plate 1000 conducts heat to the probe card 300', so that the substrate expands and deforms, and the position of the probe needle 400 'is changed. And the contact position is shifted with respect to the pad of the IC chip mounted on the IC wafer 500.
The reliability of the inspection results cannot be guaranteed by the test in the high temperature state of 0, and the second problem is the specification of the probe card 300 ′ used in the test in the high temperature state of the IC wafer 500,
That is, when determining the specifications of the convection heat transfer prevention plate 1000 and the warp suppressing member 900,
Since the inspection environment of the wafer 500 is various and cannot be sufficiently dealt with only by the desk design, there is a disadvantage that the evaluation is required as needed based on the product chip size on the IC wafer 500 and the number of simultaneous measurements.

An object of the present invention is to provide a method for testing high and low temperature of an IC wafer and a probe card holder which can secure an inspection environment equivalent to that at a normal temperature even in a test of an IC wafer in a high or low temperature state.

[0005]

Means for Solving the Problems] The high cold inspection method of IC wafer invention, using a probe Bukado, inspected by the IC wafer held by the wafer chuck of the wafer chuck as a heat source to a high temperature and low temperature In the method for inspecting high and low temperature of an IC wafer, the probe card is held.
The probe card holder and the probe card
A heat shield plate is placed between the
Placing , heat generated from the wafer chuck,
And a heat step barrier between reaching the probe card held by the probe card holder.

[0006]

[0007] The method further includes a step of insulating heat accumulated in the heat shield plate by radiation emitted from the wafer chuck before reaching the probe card.

[0008] The method further includes the step of treating the surface of the heat shield plate facing the wafer chuck into a mirror state.

The method may further include forming a fin on the probe card holder to dissipate heat.

[0010] Thermal plate with the probe card holder shield of the present invention, in the probe card holder that holds the probe Bukado for performing high cold testing of IC wafer held by the wafer chuck, the convective heat emanating from the wafer chuck A heat shield plate for shielding heat from reaching the probe card is provided between the probe card and the wafer chip.
And is located between the
You .

[0011] In some cases, a gap between the heat shield plate and the probe card is filled with a heat insulating material.

The heat shield plate includes a heat shield plate whose surface facing the wafer chuck is mirror-finished.

In the method for inspecting high and low temperatures of an IC wafer and the probe card holder with a heat shield plate of the present invention, the convection heat generated from the wafer chuck is blocked and does not reach the probe card held by the probe card holder. Card temperature rise and fall are prevented.

The heat insulating material between the heat shield plate and the probe card further enhances the heat insulating effect.

When the surface of the heat shield plate is processed into a mirror surface, the heat radiation is reflected, so that the heat insulating effect is further enhanced.

Since the fins formed on the probe card holder dissipate heat, the temperature of the probe card is further prevented from rising.

[0017]

Next, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a flowchart of a first embodiment of a method for inspecting high and low temperatures of an IC wafer according to the present invention.

As shown in FIG. 1, the method for inspecting the high / low temperature of an IC wafer according to the present embodiment uses a prober, and first sets the IC wafer to a high temperature and a low temperature by using a wafer chuck holding the IC wafer as a heat source (step 1). S1). Next, the convection heat generated from the wafer chuck is blocked while reaching the probe card held by the probe card holder (step S2). Here, a heat shield plate may be provided between the probe card and the wafer chuck in order to shield convective heat. Subsequently, the inspection is performed by bringing the probe needle into contact with the IC wafer (step S3).

In the IC wafer high / low temperature inspection method of the present embodiment, the convection heat from the wafer chuck serving as a heat source is blocked between the probe card and the probe card, and the temperature of the probe card does not rise and fall. Even in a low temperature state, the reliability of the inspection result equivalent to that in a normal temperature environment is ensured.

FIG. 2 is a flowchart of a second embodiment of the method for inspecting IC wafers at high and low temperatures according to the present invention.

As shown in FIG. 2, the method for inspecting the high and low temperature of an IC wafer according to the present embodiment uses a prober, and first, as in step S1 in FIG. 1, using a wafer chuck holding the IC wafer as a heat source. Are brought to a high temperature and low temperature state (step S11). Next, as in the case of step S2, a heat shield plate is installed between the probe card of the probe card holder and the wafer chuck, and heat convection generated from the wafer chuck is shielded from reaching the probe card (step S12). ). Then, filling the insulation material into the gap between the heat shielding plate and the probe card (step S1
3). Then, as in step S 3, it inspected against the probe needles to the IC wafer (step S14).

In the method for inspecting high and low temperature of an IC wafer according to the present embodiment, in addition to the inspection method according to the first embodiment, a heat insulating material is filled in the gap between the heat shield plate and the probe card, so that the heat of the heat shield plate further decreases. It does not conduct to the probe card, so that the heat shielding effect is further enhanced, and an inspection result equivalent to that in a normal temperature environment can be obtained even in a high / low temperature state.

FIG. 3 is a flowchart of a third embodiment of the method for inspecting IC wafers at high and low temperatures according to the present invention.

As shown in FIG. 3, the IC wafer high / low temperature inspection method according to the present embodiment uses a prober probing apparatus, and steps S21 and S22 are the same as those in FIG.
S1 is the same as step S2, but next step S2
The surface facing the wafer chuck of the heat shield plate set in Step 2 is processed into a mirror surface state (Step S23). Subsequently, an inspection is performed by bringing the probe needle into contact with the IC wafer (step S24).

In the IC wafer high / low temperature inspection method of the present embodiment, in addition to the inspection method of the first embodiment, the surface of the heat shield plate facing the wafer chuck is mirror-finished, so that radiant heat from the wafer chuck is reduced. Thus, the reliability of the inspection result is further ensured even in a high / low temperature state.

FIG. 4 is a flowchart of a fourth embodiment of the method for inspecting IC wafers at high and low temperatures according to the present invention.

As shown in FIG. 4, the method for inspecting high and low temperature of an IC wafer according to the present embodiment uses a prober and performs step S3.
1 and step S32 are the same as step S11 and step S11 in FIG.
Similar to S12, but the surface facing the wafer chuck of the heat shield plate installed in Step S32 is mirror-finished as in Step S23 of FIG. 3 (Step S33). Subsequently, similarly to step S13 of FIG. 2, a gap between the heat shield plate and the probe card is filled with a heat insulating material (step S34). Subsequently, as in step S14, the inspection is performed by bringing the probe needle into contact with the IC wafer.
(Step S35).

In the IC wafer high / low temperature inspection method according to the present embodiment, in addition to the inspection method according to the second embodiment, the surface of the heat shield plate facing the wafer chuck is processed into a mirror state, so that radiant heat from the wafer chuck is reduced. Thus, the reliability of the inspection result is further ensured even in a high / low temperature state.

FIG. 5 is a flowchart of a fifth embodiment of the method for inspecting IC wafers at high and low temperatures according to the present invention.

As shown in FIG. 5, the IC wafer high / low temperature inspection method according to the present embodiment uses a probing device, and first, as in step S1 of FIG. 1, using a wafer chuck for holding the IC wafer as a heat source. The wafer is brought into a high temperature and low temperature state (step S41). Next, as in step S2, a heat shield plate is provided between the probe card of the probe card holder and the wafer chuck, and convective heat generated from the wafer chuck is shielded before reaching the probe card (step S42). . Subsequently, fins are formed on the probe card holder main body to dissipate the accumulated heat (step S43). Subsequently, an inspection is performed by bringing the probe needle into contact with the IC wafer (step S44).

In the IC wafer high / low temperature inspection method of the present embodiment, in addition to the inspection method of the first embodiment, fins are formed in the probe card holder to dissipate heat, so that the probe card held by the holder is dissipated. Temperature rise is prevented, and the reliability of inspection results equivalent to those in a normal temperature environment is ensured even in a high / low temperature state.

In this embodiment, in addition to the high / low temperature inspection method shown in FIG. 1, a step of forming fins in the probe card holder body and dissipating heat (step S43) is provided.
Similar steps may be added to the high / low temperature inspection method of FIGS.

FIG. 6 is a longitudinal sectional view of a first embodiment of the probe card holder with a heat shield plate of the present invention.

The probe card holder with a heat shield plate according to the first embodiment is a probe card holder to which the method for inspecting high and low temperatures of an IC wafer shown in FIG. 1 is applied. As shown in FIG. It comprises a main body 200 and a heat shield plate 100. The probe card holder main body 200 holds the probe card 300. Heat insulating plate 100 is installed in the pro <br/> over blanking the card holder body 200 between the wafer chuck 600 for holding a Haritate surface and IC wafer 500 of the probe card 300. The heat shield plate 100 is formed of a metal plate, but may be formed of a heat-resistant plastic plate or the like. The heat shield plate 100 has an opening 110 at the center so that the probe needle 400 of the probe card 300 projects from the lower surface.

In this probe card holder with a heat shield plate, the heat shield plate 100 has an opening at the center and is located between the wafer chuck 600 and the probe card 300. inspection can, and at the same time convective heat from the wafer chuck 600 as a heat source is prevented from reaching the probe card 300, the heat transmitted to the heat insulating plate 100 is probe car <br/> Dohoruda body 200 Released from

Next, the operation will be described.

In the probe card 300 using the probe card holder with the heat shield plate of the present embodiment, the IC wafer 5
Probing is performed on the pads of the IC chip on 00, and an electrical test is performed.

Since the card holder with the heat shield plate is provided in the prober, the heat shield plate
Convective heat received by the wafer 100 from the wafer chuck 600 is transmitted to the card holder 200 and processed by a forced air temperature adjustment mechanism (not shown) in the prober.

Therefore, it is not necessary to change the probing conditions (setting conditions for the prober) even if the temperature environment for testing the IC chip is different.

The heat insulating plate with a probe card holder of the present embodiment, along with the convective heat from the wafer chuck does not reach the probe card, so the heat transferred to the heat shield plate is released or collected from probe card holder body In addition, it is possible to suppress the expansion and deformation of the probe card substrate due to the heat.
And the position of contact with the pad formed on the IC wafer 500 is always stable, and the reliability of the test results can be maintained at the same level as at normal temperature.
It is not necessary to change the probing conditions even when the temperature environment for inspecting the chip is different.

By applying the method for inspecting high and low temperatures of the IC wafer shown in FIG. 3 to the probe card holder with the heat shield plate of the present embodiment, the heat shield plate 100 whose surface facing the wafer chuck 600 is mirror-finished is used. Is also good. In this case, heat radiation from the wafer chuck 600 is reflected by the heat shield plate 100, so that the heat shield effect is further enhanced.

FIG. 7 is a longitudinal sectional view of a probe card holder with a heat shield plate according to a second embodiment of the present invention.

The probe card holder with a heat shield plate according to the second embodiment is a probe card holder to which the method for inspecting high and low temperatures of an IC wafer shown in FIG. 2 is applied. As shown in FIG. 7, the probe card holder shown in FIG. 300 lower surface (needle upright surface)
The heat insulating material 700 is filled in the gap between the heat insulating plate 100 and the heat shield plate 100.

Since the heat insulating material 700 is filled in the probe card holder with the heat shield plate, the effect of the heat released from the heat shield plate 100 on the probe card 300 can be completely prevented.

In the probe card holder with the heat shield plate of the present embodiment, the heat insulating material completely prevents the effect of the heat conducted from the heat shield plate on the probe card.
Further, a heat-shielding effect can be further obtained than in the case of the embodiment.

As in the first embodiment, the IC shown in FIG.
Applying the wafer high / low temperature inspection method, the wafer chuck 6
By using the heat shield plate 100 whose surface facing to 00 is mirror-finished, heat radiation from the wafer chuck 600 is reflected by the heat shield plate 100, so that the heat shield effect can be further enhanced.

FIG. 8 is a longitudinal sectional view of a probe card holder with a heat shield plate according to a third embodiment of the present invention.

The probe card holder with a heat shield plate according to the third embodiment is a probe card holder to which the method for inspecting high and low temperatures of an IC wafer shown in FIG. 5 is applied. As shown in FIG. 8, the probe card holder shown in FIG. The configuration is similar to that of FIG. 6 except that a probe card holder main body 210 is used instead of the holder main body 200. Fins 250 are formed on the surface of the probe card holder body 210 facing the wafer chuck 600.

In this probe card holder with a heat shield plate, the fins are formed in the probe card holder main body, so that heat accumulated in the probe card holder is dissipated.

In the probe card holder with the heat shield plate of the present embodiment, since the heat of the probe card holder is dissipated by the fins, the effect can be further improved as compared with the first embodiment.

In this embodiment, a probe card holder main body 210 having fins 250 is used instead of the probe card holder main body 200 of FIG.
A probe card holder with a heat shield plate in which fins are formed on the probe card holder main body of the above.

[0053]

As described above, according to the present invention, first, convection heat from the wafer chuck serving as a heat source is prevented by the heat shielding means such as the provision of the heat shielding plate in the probe card holder. Since the test temperature environment of the wafer is always the same and the performance of the proven probe card is not impaired, the reliability of the high and low temperature test results of the IC wafer can be maintained at the same level as at room temperature. The use of heat shielding means that the temperature environment for testing IC wafers is always the same, eliminating the need for high-temperature countermeasures. Therefore, the necessity of a new probe card design (convection heat transfer prevention plate warpage suppression member) and probing evaluation Has the effect of disappearing.

[Brief description of the drawings]

FIG. 1 is a flowchart of a first embodiment of an IC wafer high / low temperature inspection method of the present invention.

FIG. 2 is a flowchart of a second embodiment of the method for inspecting high and low temperature of an IC wafer according to the present invention.

FIG. 3 is a flowchart of a third embodiment of a method for inspecting high and low temperature of an IC wafer according to the present invention.

FIG. 4 is a flowchart of a fourth embodiment of a method for inspecting high and low temperature of an IC wafer according to the present invention.

FIG. 5 is a flowchart of a fifth embodiment of an IC wafer high / low temperature inspection method according to the present invention.

FIG. 6 is a longitudinal sectional view of a first embodiment of a probe card holder with a heat shield plate of the present invention.

FIG. 7 is a longitudinal sectional view of a probe card holder with a heat shield plate according to a second embodiment of the present invention.

FIG. 8 is a longitudinal sectional view of a probe card holder with a heat shield plate according to a third embodiment of the present invention.

FIG. 9 is a longitudinal sectional view of a conventional example of a probe card holder.

[Explanation of symbols]

 REFERENCE SIGNS LIST 100 heat shield plate 110 opening (central part of heat shield plate) 200, 210 probe card holder main body 250 fin 300 probe card 310 probe card opening 400 probe needle 500 IC wafer 600 wafer chuck 700 heat insulating material

──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/66 G01R 1/06 G01R 31/28

Claims (10)

(57) [Claims] [Claim 1] with a probe Bukado, in high cold inspection method of the IC wafer to be inspected by the IC wafer held by the wafer chuck of the wafer chuck as a heat source to a high temperature and low temperature, probe for holding the probe card Card holder
Between the probe card and the wafer chuck.
A step of installing the heat shielding plate is positioned, the heat generated from the wafer chuck, the IC wafer and having a heat stage barrier between reaching the probe card held by the probe card holder High and low temperature inspection method. 2. The method according to claim 1 , further comprising the step of insulating heat accumulated in the heat shield plate by radiation emitted from the wafer chuck between the heat shield plate and the probe card. 3. A high cold inspection method of an IC wafer according to claim 1 or 2 further comprising the step of treating the surface facing said wafer chuck of said heat insulating plate to a mirror surface state. 4. The method according to claim 1, further comprising forming fins on the probe card holder to dissipate heat.
4. The method for inspecting high and low temperature of an IC wafer according to claim 3 . 5. The probe card holder that holds the probe Bukado for performing high cold testing of IC wafer held by the wafer chuck and the heat shield between leading convective heat emanating from the wafer chuck to the probe card heat shield plate, the flop for
Between the lobe card and the wafer chuck.
Heat insulating plate with a probe card holder, characterized by being kicked. 6. The probe card holder with a heat shield plate according to claim 5 , wherein a heat insulating material is filled in a gap between the heat shield plate and the probe card. Wherein said heat insulating plate, according to claim 5 in which the surface facing said wafer chuck is processed to a mirror surface state
Or a probe card holder with a heat shield plate according to item 6 . 8. The probe card holder with a heat shield plate according to claim 5 , wherein fingers for dissipating heat are formed. 9. The probe card holder with a heat shield plate according to claim 5 , wherein said heat shield plate is formed of metal. 10. The probe card holder with a heat shield plate according to claim 5 , wherein said heat shield plate is formed of heat-resistant plastic.