JP3321895B2 - Method of forming fine circuit pattern on transparent conductive film - Google Patents
Method of forming fine circuit pattern on transparent conductive filmInfo
- Publication number
- JP3321895B2 JP3321895B2 JP10692293A JP10692293A JP3321895B2 JP 3321895 B2 JP3321895 B2 JP 3321895B2 JP 10692293 A JP10692293 A JP 10692293A JP 10692293 A JP10692293 A JP 10692293A JP 3321895 B2 JP3321895 B2 JP 3321895B2
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- conductive film
- fine circuit
- circuit pattern
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
Description
【産業上の利用分野】本発明は、透明導電性フィルムに
おける微細回路パターンの形成方法に関するものであ
る。なお、この明細書において、「微細回路」とは、線
幅１００μｍ以下の回路をいう。The present invention relates, in Toru transparent conductive film
And a method of forming a fine circuit pattern in the same. In this specification, the term “fine circuit” refers to a circuit having a line width of 100 μm or less.
【従来の技術】従来、一般的に透明導電性フィルムは、
ポリチレンテレフタレートフィルム等の透明プラスチッ
クフィルムの片面の全面または一部に、酸化インジュウ
ム、酸化錫、インジュウム錫酸化物、金、銀、パラジウ
ム等の透明導電性物質をスパッタリング、真空蒸着、イ
オンプレーティング、塗布等により透明導電性薄膜（単
層または複数層）が形成せられたものである。この透明
導電性フィルムに回路を加工する方法としては、塩酸や
硫酸等により不必要な導電層を除去する湿式法と、レー
ザ等により不必要な導電層を除去する乾式法が知られて
いる。2. Description of the Related Art Conventionally, transparent conductive films are generally
A transparent conductive material such as indium oxide, tin oxide, indium tin oxide, gold, silver, and palladium is sputtered, vacuum-deposited, ion-plated, on the entire surface or on one side of a transparent plastic film such as a polyethylene terephthalate film. A transparent conductive thin film (single layer or plural layers) is formed by coating or the like. As a method of processing a circuit on the transparent conductive film, a wet method of removing an unnecessary conductive layer with hydrochloric acid, sulfuric acid, or the like, and a dry method of removing an unnecessary conductive layer with a laser or the like are known.
【発明が解決しようとする課題】しかしながら、湿式法
では、微細回路パターンを精度良く加工することは困難
である。また、乾式法としては、ＹＡＧレーザの第２高
調波（波長５３２ｎｍ）による回路加工方法が知られて
いるが（特開平２−２５９７２７号参照）、第２高調波
を使用するため、加工速度が遅く、湿式法に比べ高価で
ある。これらのことから、基本波長である１０６４ｎｍ
のＹＡＧレーザを用いることにより、湿式法並のコスト
で微細回路パターンを精度良く加工しうる、透明導電性
フィルムの微細回路パターンの形成方法の出現が業界か
ら強く望まれていた。この発明の目的は、上記の要望に
応え、微細回路パターンを波長１０６４ｎｍのＹＡＧレ
ーザにより安価にしかも速い速度で精度良く加工しうる
透明導電性フィルムの微細回路パターンの形成方法を提
供することにある。However, it is difficult to process a fine circuit pattern with high accuracy by the wet method. As a dry method, a circuit processing method using a second harmonic (wavelength: 532 nm) of a YAG laser is known (see Japanese Patent Application Laid-Open No. 2-259727). However, since the second harmonic is used, the processing speed is reduced. Slower and more expensive than wet methods. From these facts, the fundamental wavelength of 1064 nm
The use of the YAG laser, may be accurately processed fine circuit patterns at the cost of a wet process parallel, the appearance of the method for forming a fine circuit pattern of the transparent conductive film has been strongly desired from the industry. An object of the present invention is to meet the above-mentioned demands.
In response , a fine circuit pattern can be accurately and inexpensively processed at a high speed with a YAG laser having a wavelength of 1064 nm.
An object of the present invention is to provide a method for forming a fine circuit pattern of a transparent conductive film .
【課題を解決するための手段】本発明による透明導電性
フィルムの微細回路パターンの形成方法は、上記の目的
を達成するために、基本波長１０６４ｎｍのＹＡＧレー
ザを透明導電性フィルムの透明導電性薄膜面に照射して
線幅１００μｍ以下の微細回路パターンを加工する方法
であって、前記透明導電性フィルムは、透明導電性薄膜
を形成させる透明プラスチックフィルムの片面の表面粗
さが、三次元中心線平均粗さ（ＳＲａ）で０．０５μｍ
以下であることを特徴としている。上記三次元中心線平
均粗さ（ＳＲａ）が０．０５μｍを超えると、回路基板
を形成するために、透明導電性フィルムに波長１０６４
ｎｍのＹＡＧレーザを照射したさい、導電層の除去され
た透明プラスチックの露出面に多数の黒点状の焼けが生
じる。三次元中心線平均粗さ（ＳＲａ）を０．０５μｍ
以下にする方法としては、プラスチックフィルム成膜に
使用される樹脂中に有機および無機の滑剤を配合し、そ
の量と形状を変えることにより調整する方法と、滑剤を
使用せずにインラインコーティングで調整する方法があ
るが、本発明では、滑剤を使用しないインラインコーテ
ィングにより成膜されたフィルムを使用し、その非コー
ト面に透明導電性薄膜を形成するのが好ましい。なお、
三次元中心線平均粗さ（ＳＲａ）は、小坂研究所三次元
粗さ計（ＳＥ−３０Ｋ）を用いて、針径２μｍＲ、針圧
３０ｍｇ、測定長１ｍｍ、サンプリングピッチ０．２５
ｍｍ、縦方向拡大倍率２万倍、横方向拡大倍率２００
倍、走査本数１５０本の条件で測定したものである。According to the present invention, a method for forming a fine circuit pattern on a transparent conductive film according to the present invention is directed to a YAG laser having a fundamental wavelength of 1064 nm.
The transparent conductive thin film surface of the transparent conductive film
Method of processing fine circuit pattern with line width of 100 μm or less
The transparent conductive film is a transparent conductive thin film
The surface roughness of one side of the transparent plastic film for forming the surface is 0.05 μm in terms of three-dimensional center line average roughness (SRa).
It is characterized in der Rukoto below. When the three-dimensional center line average roughness (SRa) exceeds 0.05 μm, a wavelength of 1064 is applied to the transparent conductive film to form a circuit board.
When a YAG laser of nm is irradiated, a large number of black spot-like burns occur on the exposed surface of the transparent plastic from which the conductive layer has been removed. Three-dimensional center line average roughness (SRa) of 0.05 μm
The following methods are used to adjust organic and inorganic lubricants by blending organic and inorganic lubricants in the resin used for plastic film formation, and by adjusting the amount and shape of the lubricants, and by in-line coating without using lubricants In the present invention, it is preferable to use a film formed by in-line coating without using a lubricant, and to form a transparent conductive thin film on the non-coated surface. In addition,
The three-dimensional center line average roughness (SRa) was measured using a Kosaka Laboratory three-dimensional roughness meter (SE-30K) with a needle diameter of 2 μmR, a needle pressure of 30 mg, a measurement length of 1 mm, and a sampling pitch of 0.25.
mm, vertical magnification 20,000 times, horizontal magnification 200
The measurement was performed under the condition that the number of scanning times was 150 times.
【作用】この発明による透明導電性フィルムの微細回路
パターンの形成方法においては、透明導電性フィルム
は、透明プラスチックフィルムの片面の表面粗さが、三
次元中心線平均粗さ（ＳＲａ）で０．０５μｍ以下であ
り、この片面に透明導電性薄膜が形成されており、この
透明導電性フィルムを使用することにより、波長１０６
４ｎｍのＹＡＧレーザで良好な微細回路加工ができる。 The fine circuit of the transparent conductive film according to the present invention
In the method for forming a pattern , the transparent conductive film has a three-dimensional center line average roughness (SRa) of 0.05 μm or less in surface roughness of one side of the transparent plastic film. are formed by using the transparent conductive film, the wavelength 106
Good fine circuit processing can be performed with a 4 nm YAG laser.
【実施例】この発明の実施例を以下に説明する。 実施例１ この実施例の微細回路加工用透明導電性フィルムは、三
次元中心線平均粗さ（ＳＲａ）が０．０３μｍで厚さ１
２５μｍの二軸延伸ポリエチレンテレフタレートフィル
ム（ＰＥＴ）の片面にスパッタリング法により厚さ２０
０オングストロームのインジウム錫酸化物（ＩＴＯ）の
透明導電性薄膜が形成されているものである。 実施例２ この実施例の微細回路加工用透明導電性フィルムは、三
次元中心線平均粗さ（ＳＲａ）が０．０５μｍであるこ
と以外は、実施例１と同じである。 比較例１ この比較例の微細回路加工用透明導電性フィルムは、三
次元中心線平均粗さ（ＳＲａ）が０．０６μｍであるこ
と以外は、実施例１と同じである。 比較例２ この比較例の微細回路加工用透明導電性フィルムは、三
次元中心線平均粗さ（ＳＲａ）が０．１μｍであること
以外は、実施例１と同じである。上記各実施例および各
比較例の透明導電性フィルムに波長１０６４ｎｍのＹＡ
Ｇレーザを電流２３Ａ、速度１０００ｍｍ／秒、周波数
１０ＫＨｚで照射し回路加工を行なったところ、実施例
１および２では、ともに線幅７０μｍで良好な回路加工
がなされた。ところが、比較例１および２では、加工部
においてＩＴＯの除去されたＰＥＴ露出面に多数の黒点
状の焼けが発生した。この黒点状の焼けの発生は、レー
ザの照射により微細な突起部が焼けたことによるものと
考えられる。また、比較例２では、さらに、加工部と非
加工部の境界が、直線状ではなく、ぎざぎざ状となり、
境界線がきたなくなっていた。Embodiments of the present invention will be described below. Example 1 The transparent conductive film for processing a fine circuit of this example has a three-dimensional center line average roughness (SRa) of 0.03 μm and a thickness of 1
One side of a 25 μm biaxially stretched polyethylene terephthalate film (PET) is sputtered to a thickness of 20 μm.
0 Å in Ji arm tin oxide in which the transparent conductive thin film (ITO) is formed. Example 2 The transparent conductive film for processing fine circuits of this example is the same as Example 1 except that the three-dimensional center line average roughness (SRa) is 0.05 μm. Comparative Example 1 The transparent conductive film for processing fine circuits of this comparative example is the same as Example 1 except that the three-dimensional center line average roughness (SRa) is 0.06 μm. Comparative Example 2 The transparent conductive film for processing a fine circuit of this comparative example is the same as Example 1 except that the three-dimensional center line average roughness (SRa) is 0.1 μm. YA having a wavelength of 1064 nm was applied to the transparent conductive films of the above Examples and Comparative Examples.
Circuit processing was performed by irradiating a G laser at a current of 23 A, a speed of 1000 mm / sec, and a frequency of 10 KHz. In Examples 1 and 2, favorable circuit processing was performed with a line width of 70 μm. However, in Comparative Examples 1 and 2, a large number of black spot-like burns occurred on the exposed PET surface from which ITO was removed in the processed portion. The occurrence of this black spot-like burn is considered to be caused by the burning of the fine projections by laser irradiation. Further, in Comparative Example 2, the boundary between the processed portion and the non-processed portion is not linear but jagged,
The borderline was gone.
【発明の効果】この発明の透明導電性フィルムの微細回
路パターンの形成方法は、基本波長１０６４ｎｍのＹＡ
Ｇレーザを透明導電性フィルムの透明導電性薄膜面に照
射して線幅１００μｍ以下の微細回路パターンを加工す
る方法であって、前記透明導電性フィルムは、透明導電
性薄膜を形成させる透明プラスチックフィルムの片面の
表面粗さが、三次元中心線平均粗さ（ＳＲａ）で０．０
５μｍ以下であることを特徴とするもので、この発明に
よれば、波長１０６４ｎｍのＹＡＧレーザにより良好な
微細回路加工ができるので、この加工を安価にしかも速
い速度で精度良く行ないうる。According to the present invention fine times of Toru transparent conductive film of the present invention
The method of forming the road pattern is based on the YA having a fundamental wavelength of 1064 nm.
G laser illuminates the transparent conductive thin film surface of the transparent conductive film
Process fine circuit patterns with a line width of 100 μm or less.
Wherein the transparent conductive film is a transparent conductive film.
The surface roughness of one side of the transparent plastic film on which the conductive thin film is formed is 0.03 in three-dimensional center line average roughness (SRa).
It characterized in der Rukoto below 5 [mu] m, to the present invention
According, it is good microcircuit processed by a YAG laser with a wavelength of 10 64 nm, capable of carrying out accurately the machining at a low cost and a yet faster rate.
フロントページの続き (72)発明者 三宅 英男 大阪府大阪市北区堂島浜二丁目２番８号 東洋紡績株式会社内 (56)参考文献 特開 平４−31030（ＪＰ，Ａ) 特開 昭63−46236（ＪＰ，Ａ) 特開 昭61−233531（ＪＰ，Ａ) 特開 平２−259727（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C08J 7/00 - 7/18 H05K 1/02,3/00,3/08 Continuation of the front page (72) Inventor Hideo Miyake 2-8-8 Dojimahama, Kita-ku, Osaka-shi, Osaka Toyobo Co., Ltd. (56) References JP-A-4-31030 (JP, A) JP-A-63- 46236 (JP, A) JP-A-61-233531 (JP, A) JP-A-2-259727 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) C08J 7/00-7 / 18 H05K 1 / 02,3 / 00,3 / 08
Claims (1)
透明導電性フィルムの透明導電性薄膜面に照射して線幅
１００μｍ以下の微細回路パターンを加工する方法であ
って、前記透明導電性フィルムは、透明導電性薄膜を形
成させる透明プラスチックフィルムの片面の表面粗さ
が、三次元中心線平均粗さ（ＳＲａ）で０．０５μｍ以
下であることを特徴とする透明導電性フィルムの微細回
路パターンの形成方法。1. A YAG laser having a fundamental wavelength of 1064 nm.
Line width by irradiating the transparent conductive thin film surface of the transparent conductive film
A method for processing a fine circuit pattern of 100 μm or less.
Thus, the transparent conductive film forms a transparent conductive thin film.
One side of the surface roughness of the transparent plastic film to made is of the transparent conductive film characterized in der Rukoto below 0.05μm in three dimensions a center line average roughness (SRa) fine times
A method of forming a road pattern .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10692293A JP3321895B2 (en) | 1993-05-07 | 1993-05-07 | Method of forming fine circuit pattern on transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10692293A JP3321895B2 (en) | 1993-05-07 | 1993-05-07 | Method of forming fine circuit pattern on transparent conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06322164A JPH06322164A (en) | 1994-11-22 |
| JP3321895B2 true JP3321895B2 (en) | 2002-09-09 |
Family
ID=14445916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10692293A Expired - Fee Related JP3321895B2 (en) | 1993-05-07 | 1993-05-07 | Method of forming fine circuit pattern on transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3321895B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2150097A (en) * | 1996-01-26 | 1997-08-20 | Emi-Tec Elektronische Materialien Gmbh | Process for producing a conductor structure |
| JP3919972B2 (en) * | 1998-07-31 | 2007-05-30 | セイコーエプソン株式会社 | Manufacturing method of semiconductor device |
| JP2005347610A (en) * | 2004-06-04 | 2005-12-15 | Ricoh Microelectronics Co Ltd | Electronic-component mounting method |
| KR102007129B1 (en) * | 2012-07-20 | 2019-08-02 | 도요보 가부시키가이샤 | Conductive paste for laser etching, conductive thin film, and conductive laminate |
-
1993
- 1993-05-07 JP JP10692293A patent/JP3321895B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06322164A (en) | 1994-11-22 |
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