JP3311468B2 - Black matrix substrate and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a black matrix substrate and a method for manufacturing the same, and more particularly, to a black matrix substrate used for a color liquid crystal display and a method for manufacturing the same.

[0002]

2. Description of the Related Art As a power-saving display, a liquid crystal display device is used for a wide range of applications. A commonly used active matrix liquid crystal display device has two translucent substrates arranged opposite to each other, fills the liquid crystal between the two substrates, and fills the liquid crystal with a voltage applied between the two substrates. Is controlled for each pixel. In an apparatus for performing color display, a color filter layer in which a filter of a predetermined color is arranged for each pixel region on a first substrate, and a transparent common electrode serving as one electrode for applying a voltage are provided. It is formed. On the second substrate, a display electrode serving as the other electrode for applying a voltage, and a transistor element for controlling a voltage applied to the display electrode are formed for each pixel region. The ON / OFF operation of the transistor element controls the optical characteristics of the liquid crystal for each pixel.

A color filter layer formed on a first substrate has a predetermined color (for example, R: red, G: green, B: blue).
Are arranged for each pixel, and filters of different colors are arranged in adjacent pixels.
Therefore, just using this color filter layer,
The boundary area between pixels becomes unclear. Therefore, in order to sharpen the boundary area between pixels, a color filter layer is usually formed on a black matrix substrate formed by forming a light-shielding black matrix layer having a pattern corresponding to the boundary area between pixels. You. In particular, in an active matrix type liquid crystal display device, since a thin film transistor is used as a switching element, it is necessary to suppress a light leak current due to external light, and a black matrix layer having a very high light shielding property is required. For this reason,
In a black matrix substrate used in an active matrix type liquid crystal display device, a black matrix layer is generally formed from chromium.

[0004]

As described above, the black matrix layer is a layer which borders the boundary area of the pixel, and the color filter layer is formed in a closed area surrounded by the black matrix layer. become. When configuring a general color liquid crystal display device, R: red, G:
It is necessary to form color filter layers of three primary colors of green and B: blue. A dyed photoresist is generally used as a material of these color filter layers, and this photoresist is formed at a predetermined position by a photolithography technique. On the other hand, in recent years, a method of using a resin in which a dye or a pigment is dispersed as a color filter layer has been proposed. In this method, a liquid color filter material is transferred onto a black matrix substrate by a method such as offset printing. After that, it will be dried and solidified.

As described above, when a liquid material is transferred onto a substrate by a method such as offset printing, it is necessary to take into consideration the "wettability" of the substrate. If "wetting" is poor,
Incomplete transcription. That is, there are pixels in which the liquid color filter material is not sufficiently transferred. Since the "wetting property" of the metal layer made of chromium is very good, such a problem as incomplete transfer does not occur. However, another problem has arisen because the "wettability" is too good. That is, if the "wettability" is too good, there is an adverse effect that the liquid color filter material spreads not only to the pixel region to be originally transferred but also to the pixel region adjacent thereto. When a general color liquid crystal display device is configured, color filter layers of three primary colors of R, G, and B are arranged in a dispersed manner, so that a color filter material of one color spreads to adjacent pixels. If this occurs, the color will be mixed with another color, and a color filter layer of the correct color cannot be formed.

Accordingly, an object of the present invention is to provide a black matrix substrate having "wettability" suitable for transferring a liquid color filter material and a method of manufacturing the same.

[0007]

[Means for Solving the Problems]

(1) The first invention of the present application is directed to a black matrix substrate formed by forming a light-shielding black matrix layer having a pattern corresponding to a boundary region of a pixel on a substrate,
At least the upper surface portion of the black matrix layer is constituted by a chromium fluoride compound layer.

(2) The second invention of the present application is directed to a black matrix substrate in which a light-shielding black matrix layer having a pattern corresponding to a boundary region of a pixel is formed on a substrate. When,
And a chromium fluoride compound layer formed on at least the upper surface of the chromium layer.

(3) The third invention of the present application is the method for manufacturing a black matrix substrate according to the second invention, wherein a material layer made of chromium is formed on the substrate, and the surface of the material layer is Fluorine is applied to form a fluorinated chromium compound film on the surface of the material layer, and only a part of the fluorinated compound film is opened using a mask plate having an opening formed in a region corresponding to a region where the black matrix layer is not formed. To form an oxygen compound film by causing oxygen to act on the exposed portion, and the etching rates for the chromium material layer and the oxygen compound film are sufficient for performing pattern formation as compared with the etching rates for the fluorine compound film. The material layer is removed in a region corresponding to the opening window of the mask plate, and the fluorine compound film and the The chromium material layer is left as a black matrix layer.

(4) The fourth invention of the present application is the method according to the third invention, wherein after forming the fluorine compound film on the surface of the material layer, the ion gun is used to make a direction substantially perpendicular to the fluorine compound film. By irradiating oxygen ions from the substrate, and disposing the mask plate in the middle of this irradiation path so as to be substantially parallel to the fluorine compound film, thereby forming an oxygen compound film in a region corresponding to the opening window of the mask plate. It is like that.

(5) The fifth invention of the present application is the method for manufacturing a black matrix substrate according to the second invention, wherein a material layer made of chromium is formed on the substrate, and the surface of the material layer is Fluorine is applied to form a fluorinated chromium compound film on the surface of the material layer, and only a part of the fluorinated compound film is opened using a mask plate having an opening formed in a region corresponding to a region where the black matrix layer is not formed. The exposed portion is exposed to inert gas ions to remove the fluorine compound film, the material layer is exposed in a region corresponding to the opening window, and the etching rate of the chromium material layer is smaller than that of the fluorine compound film. Etching is performed so that the etching rate is large enough to form a pattern, and the material layer is removed in a region corresponding to the opening window of the mask plate. , A fluorine compound film and a chromium material layer covered by the fluorine compound film are left as a black matrix layer.

(6) In a sixth aspect of the present invention, in the method according to the fifth aspect, after a fluorine compound film is formed on the surface of the material layer, a direction substantially perpendicular to the fluorine compound film from the ion gun is applied. Argon ions are irradiated from above, and the mask plate is arranged in the middle of this irradiation path so as to be substantially parallel to the fluorine compound film, so that the fluorine compound film in a region corresponding to the opening window of the mask plate is sputtered. To remove them.

[0013]

The present inventor paid attention to the fact that the "wetting property" of the chromium fluoride compound film was lower than the "wetting property" of the chromium metal layer. It has been found that the transfer condition of a liquid color filter material can be improved by forming a chromium fluoride compound film in advance.

In the black matrix substrate according to the present invention, at least the upper surface portion of the black matrix layer has
Since it is composed of the chromium fluorine compound layer, "wetability" suitable for transferring a liquid color filter material can be obtained.

In the method of manufacturing a black matrix substrate according to the present invention, a black matrix substrate having the above structure can be manufactured by a simple process without using a photolithography technique. That is, after a fluorine compound film is formed on the surface of the chromium material layer by applying fluorine, oxygen is applied only to a predetermined region using a mask plate to form an oxygen compound film. Then, by using only the etching rate difference between the fluorine compound film and the oxygen compound film to remove only the portion covered with the oxygen compound film, the black matrix layer made of chromium covered with the fluorine compound film can be easily formed. Can be formed. Alternatively, a similar black matrix layer can be formed by exposing an exposed portion of the fluorine compound film by sputtering using an inert gas instead of oxygen.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the illustrated embodiments.

<Structure of General Black Matrix Substrate> FIG. 1 is a perspective view showing a basic structure of a general active matrix liquid crystal display device. The main components of this device are an upper structure 1 and a lower structure 2. The upper structure 1 functions as a color filter, and the lower structure 2 functions as a driving device. The two structures are mainly composed of transparent glass substrates 100 and 200, respectively, and a plurality of pixels are defined on a plane of these glass substrates. In the example shown in FIG. 1, for convenience, 3 × 3
Are defined, but a larger number of pixels are actually defined. The two substrates are opposed to each other so as to be parallel to each other, and the corresponding pixels face each other. A polarizing plate 110 is arranged on the upper surface of the glass substrate 100 forming the upper structure 1, and a polarizing plate 210 is arranged on a lower surface of the glass substrate 200 forming the lower structure 2. On the lower surface of the glass substrate 100, a color filter layer 120 and a common electrode 130 are formed. The color filter layer 120 is, in this embodiment,
Filters of three colors of R: red, G: green, B: blue are arranged for each pixel. The common electrode 130 is made of one transparent electrode material. On the other hand, a display electrode 220 and a transistor element 23 for controlling the potential of the display electrode are provided on the glass substrate 200 for each pixel.
0 and are formed. The transistor element 230 is
The gate electrode is on the scanning line 240 and the source electrode is on the data line 2
50, the drain electrode is connected to the display electrode 220, respectively.

In such a structure, if a predetermined voltage is supplied to the scanning line 240 to turn on the transistor element 230, the potential of the display electrode 220 can be set to the same level as the potential of the data line 250. When the transistor element 230 is turned off, the potential of the display electrode 220 can be maintained as it is. Liquid crystal is filled between the upper structure 1 and the lower structure 2.
The liquid crystal is sandwiched between the upper common electrode 130 and the lower display electrode, and changes optical characteristics according to a potential difference between the two electrodes. Thus, the optical characteristics of the liquid crystal can be controlled for each pixel. Therefore, transmission / non-transmission of white light emitted from the bottom of the figure can be controlled in each pixel unit, and when observed from the top of the figure, emission / non-emission of each pixel unit can be controlled.

By the way, the color filter layer 120
Although a filter of three colors of R, G, and B is arranged for each pixel, the boundary region of each pixel becomes unclear in this state. As described above, a black matrix layer is used to sharpen this boundary region. The black matrix layer is formed in a frame-like structure at the boundary between the color filters of the color filter layer 120 (not shown in FIG. 1). FIG. 2 shows the structure of the black matrix layer. FIG. 2 is a detailed structural cross-sectional view of the upper structure 1 of a conventional general active matrix liquid crystal display device (upside down from the structure shown in FIG. 1). On the glass substrate 100, a black matrix layer 10 and a color filter layer 120 made of chromium (Cr) are formed in a predetermined pattern, and a protective layer 125 and a common electrode 130 are formed thereon. FIG. 3 is a plan view of the black matrix layer 10, and a hatched lattice-like region indicates a portion of the black matrix layer 10. Each closed region surrounded by the black matrix layer 10 is a region corresponding to an individual pixel, and includes three color filter layers 1 of R, G, and B in this pixel region.
20 are formed.

In such an upper structure 1, a portion composed of the glass substrate 100 and the black matrix layer 10 is a black matrix substrate. FIG. 4 shows a cross-sectional view of the black matrix substrate. The black matrix layer 10 has a frame-like pattern as shown in FIG. 3, and a groove 15 is formed in a closed region surrounded by the black matrix layer 10. To manufacture the upper structure 1, first, a black matrix substrate as shown in FIG. 4 is prepared, and a color filter layer 120 is formed thereon.

<Wetness of black matrix substrate>
As described above, when a liquid color filter material made of a resin or the like in which a dye or a pigment is dispersed is used as the material of the color filter layer 120, this material is transferred onto a black matrix substrate by a method such as offset printing. Will be. This transfer step is, as it were, a work of placing a liquid color filter material colored in a specific color in each groove 15 shown in FIG. FIG. 5 is a sectional view showing an ideal transfer state. A liquid color filter material 121 of each color is provided in each groove, and by drying and solidifying this, each color filter layer 120 can be formed at a correct position. In order to perform such ideal transfer, the upper surface of the black matrix layer 10 needs to have ideal "wettability".

When this "wettability" is quantitatively expressed,
Usually, a numerical value called “contact angle” is used. That is, as shown in FIG. 5, the "wetting property" is evaluated based on the contact angle θ between the surface of the liquid color filter material 121 and the upper surface of the black matrix layer 10 to be transferred. The smaller the contact angle θ, the better the “wettability”, and the larger the contact angle θ, the worse the “wettability”.

FIG. 6 is a cross-sectional view showing an example of a transfer state when the "wetting property" is poor. In this example, the contact angle θ> 9
0 °, and the “wetting property” is very poor. As described above, when the “wettability” is poor, the black matrix layer 10
Has a strong tendency to repel the liquid color filter material, and the “laying-up” in the transfer step cannot be performed sufficiently. As a result, a transfer failure as shown in the figure occurs depending on the pixel. In this example, the transfer of the G color liquid color filter material is incomplete, and color missing occurs at the boundary of the pixel region. No transfer was performed on the B color liquid color filter material.

FIG. 7 is a cross-sectional view showing an example of a transfer state when the "wetting property" is too good. In this example, the contact angle θ
= 30 °, and the “wettability” is very good.
If the "wetting property" is too good, the liquid color filter material has a strong tendency to spread along the surface of the black matrix layer 10, and not only to the pixel area to be originally transferred but also to the pixel area adjacent thereto. This has the disadvantage of spreading. In this example, the G color liquid color filter material spreads to the adjacent pixel region, and is mixed with the B color liquid color filter material. Generally, when the contact angle θ <40 °, such a cross-border phenomenon to the adjacent pixel region occurs.

The "wetting property" of a generally used black matrix layer made of chromium with pure water at the present time is a contact angle θ = about 35 °. In the above example, the “wetting property” of FIG. 7 is too good. Corresponds to the case. For this reason, when a liquid color filter material is transferred to a black matrix substrate by a method such as offset printing, the color filter material tends to spread to adjacent pixel regions, and color mixing is likely to occur. In particular,
The resolution of the liquid crystal display device tends to be improved year by year, and the size of one pixel region is becoming finer. When a liquid color filter material is transferred to such a fine pattern, a cross-over phenomenon to an adjacent pixel region is more likely to occur.

The contact angle θ showing ideal “wettability” for transferring a liquid color filter material favorably to a black matrix layer having a fine pattern varies depending on the type of liquid. According to experiments using pure water, it is expected that it is best to set the value as close to 90 ° as possible without exceeding 90 °. The inventor of the present application has found that the contact angle indicating the “wetting property” of chromium with pure water is about 35 ° as described above, whereas the contact angle indicating the “wetting property” of a fluorine compound of chromium (CrF ₃ ). Was found to be about 72 °. Therefore, if the black matrix layer 10 is formed of a fluorine compound of chromium instead of chromium, ideal "wettability" for a liquid color filter material can be secured.

<Black Matrix Substrate According to the Present Invention> The present inventor has developed a novel black matrix substrate having a structure as shown in FIG. 8 instead of the conventional black matrix substrate as shown in FIG. Devised. In this black matrix substrate, a glass substrate 1
The black matrix layer 10 formed on
It has a two-layer structure of an r layer 11 and a fluorine compound film 12. The Cr layer 11 is a layer made of chromium just like the conventional black matrix layer, and its planar pattern is exactly the same as the pattern of the conventional black matrix layer as shown in FIG. On the other hand, the fluorine compound film 12 is a film made of a fluorine compound of chromium (CrF ₃ ), and is formed on the upper surface of the Cr layer 11. When the liquid color filter material 121 is transferred to the black matrix substrate having such a structure, as shown in FIG. 9, the contact angle θ is about 72 °, and the contact angle θ is good with ideal “wettability”. Transfer will be performed.

In this embodiment, the fluorine compound film 12 is formed only on the upper surface of the Cr layer 11;
The fluorine compound film 12 may be formed on all of the exposed surfaces 1. However, since the "wetability" of the upper surface of the black matrix layer is dominant as a condition that influences the transfer state of the liquid color filter material, the fluorine compound is provided on the side surface of the Cr layer 11 as in this embodiment. A sufficient effect can be obtained by forming only the upper surface without forming the film 12. If the structure is formed only on the upper surface, the black matrix substrate can be manufactured by a manufacturing method described later, and the manufacturing process can be simplified.

Further, the black matrix substrate on which the fluorine compound film 12 is formed has not only the "wetting property" but also some additional advantages. That is, since the reflectance of the fluorine compound film 12 is lower than that of the Cr layer 11, when used in a liquid crystal display device, there is an effect that the screen looks more beautiful. Also, the fluorine compound film 1
2 has better acid resistance, alkali resistance, heat resistance, and solvent resistance than the Cr layer 11, and thus can function as a protective film for the Cr layer 11.

<Method of Manufacturing Black Matrix Substrate According to the Present Invention> Here, a method particularly suitable for manufacturing a black matrix substrate as shown in FIG. 8 will be described with reference to the cross-sectional views of FIGS. I will explain it. First, as shown in FIG.
is deposited to form a Cr material layer 20. As a method for depositing Cr, a general film forming method which has been conventionally used may be used. For example, a vacuum evaporation method, a sputtering method, a CVD method, a plating method, or the like can be used.
In this embodiment, a Cr material layer 20 having a thickness of about 800 Å was formed by a sputtering method.

Subsequently, as shown in FIG. 10B, a reactive particle source 30 is disposed above the glass substrate 100. The reactive particle generation source 30 has a function of generating reactive particles and irradiating them as a parallel flux toward the Cr material layer 20. Here, a Kauffman-type ion gun is used as the reactive particle generation source 30, and fluoride ions (for example, CF ₃ ⁺ and SF ₅₎ are used as the reactive particles.
⁺ Etc.). Thus, the Cr material layer 2
Irradiation with fluoride ions toward the Cr material layer 2
0 collides with the entire surface of the Cr material layer, and due to the chemical reaction between chromium and fluorine, as shown in FIG.
0, a fluorine compound film 21 is formed. In this embodiment, a Kauffman-type ion gun is supplied with CF as a reactive gas.
₄ was introduced at a rate of 100 sccm (Standard CC per Minute: an average flow rate per minute expressed in cc units), an ion beam irradiation voltage of 700 V, and an ion beam current of 80 m.
A, irradiation with fluoride ions CF ₃ ⁺ was performed under the conditions of A, an acceleration voltage of 400 V, and an irradiation time of 3 minutes.

Subsequently, as shown in FIG. 11A, a mask plate 40 is disposed above the fluorine compound film 21. This mask plate 40 is a mask plate having the same pattern as the black matrix layer 10 as shown in FIG. That is, it is a metal plate having a pattern corresponding to a hatched portion in FIG. 3, and an opening window 41 is formed in a pixel region portion shown in white in FIG. This mask plate 40 is arranged substantially parallel to the film surface of the fluorine compound film 21.

Above the mask plate 40, a Kauffman-type ion gun as the reactive particle source 30 is arranged.
Ion irradiation is performed on the surface of the fluorine compound film 21. However, this time, instead of fluoride ions, oxygen ions O ⁺
Is irradiated. The oxygen ions O ⁺ are irradiated as parallel ion flows, and the surface of the fluorine compound film 21 is two-dimensionally irradiated with the oxygen ions O ⁺ .
The irradiation angle of the ion stream is set to be substantially perpendicular to the film surface of the fluorine compound film 21. When such ion current irradiation is performed, the ion current applied to the opening window 41 of the mask plate 40 passes through as it is and reaches the surface of the fluorine compound film 21, but the portion other than the opening window (FIG. The ion flow applied to the hatched portion) is blocked by the mask plate 40 and cannot reach the fluorine compound film 21. In addition, since each ion stream has a linearity so as to be incident in a direction substantially perpendicular to the surface of the fluorine compound film 21, the mask plate 4 is provided on the surface of the fluorine compound film 21.
A state in which the pattern of 0 is projected. In other words, in the fluorine compound film 21, oxygen ions O ⁺ collide with a region corresponding to the opening window pattern of the mask plate 40, and collision does not occur with a shadowed region of the mask plate 40. Become.

When oxygen ions O ⁺ collide with the surface of the fluorine compound film 21, oxygen has a higher reactivity with respect to chromium than fluorine, so that fluorine atoms are replaced by oxygen atoms and oxygen is replaced by oxygen atoms. A compound film 22 is formed. That is, oxygen compounds of chromium such as CrO and CrO ₂ are formed. However, not all fluorine atoms are replaced by oxygen atoms due to the action of oxygen ions. Therefore, in practice, chromium fluoride compounds such as CrF ₃ are mixed with chromium oxygen compounds such as CrO and CrO _2. However, here, even such a mixed layer of fluorine compounds is referred to as “oxygen compound film 22” for convenience. FIG. 11B is a cross-sectional view showing a state when the irradiation of the oxygen ion flow is completed, and clearly shows a state in which a part of the fluorine compound film 21 has been replaced with the oxygen compound film 22. . Here, the oxygen compound film 22 is formed only in a region corresponding to the opening window 41 of the mask plate 40, which means that the same pattern as the pattern of the mask plate 40 is formed on the surface of the Cr material layer 20. . In this embodiment, O ₂ was introduced as a reactive gas at a rate of 100 sccm into a Kaufman-type ion gun, and an ion beam irradiation voltage of 700 V and an ion beam current of 80 m were used.
A, oxygen ion irradiation was performed under the conditions of A, an acceleration voltage of 400 V, and an irradiation time of 3 minutes.

As shown in FIG. 11B, when the oxygen compound film 22 is formed in a predetermined pattern, selective etching is performed on this. That is, the Cr material layer 2
The etching methods having different etching rates are performed between the 0 and oxygen compound film 22 and the fluorine compound film 21. For example, if etching is performed using a cerium ammonium nitrate solution, the etching rate for the Cr material layer 20 and the oxygen compound film 22 is reduced.
The etching rate is about 10 times as large as 1 and the fluorine compound film 21 having a low etching rate is used as a mask,
Only the portion of the Cr material layer 20 that is covered with the oxygen compound film 22 can be removed by etching. In this manner, as shown in FIG. 11C, the oxygen compound film 22 and the Cr material layer 20 thereunder are etched away to form the groove 15, and the Cr material layer 20 is covered with the fluorine compound film 12. Only the Cr layer 11 remains without being removed by etching. The structure shown in FIG.
Is the same as the black matrix substrate shown in FIG. Thus, a black matrix substrate having the structure shown in FIG. 8 can be produced. As another etching method, CC
even if the dry etching using l _4, the etching selectivity ratio comparable to obtain.

The advantage of this manufacturing method is that the photolithography method is not required for patterning the black matrix layer, so that the process is simplified. As a method of forming a black matrix layer without performing a photolithography method, a method of using a printing method is also known, but has a drawback that high dimensional accuracy cannot be obtained. According to the manufacturing method of the present invention described above, it is possible to form a black matrix layer with high dimensional accuracy without using a photolithography method. In the photolithography method, in order to pattern one target layer, formation of a resist layer, exposure using a mask,
Five steps of developing the resist layer, etching, and removing the resist layer are required, and all these steps must be performed in a clean room to avoid the influence of dust, thus requiring expensive equipment. Become. According to the manufacturing method of the present invention described above, it is possible to manufacture a black matrix substrate by a simple process using relatively inexpensive equipment.

<Other Embodiments> In the embodiment described so far, as shown in FIG.
On a black matrix substrate formed with the layer 310,
This is an application of the present invention. That is, as shown in FIG. 12B, by forming a chromium fluoride compound film 320 on the upper surface of the Cr layer 310, the "wettability" of the surface was improved. However, according to the present invention, as shown in FIG.
The present invention is not limited to the application to the black matrix substrate including only the layer 310, but can be similarly applied to a black matrix substrate having a multilayer structure.
For example, in addition to the structure shown in FIG.
A black matrix substrate having the structure shown in FIG. In these substrates, C
A black matrix layer is formed by the multilayer structure of the r layer 310 and the CrOx layer 315. CrOx layer 3
Reference numeral 15 is brownish black and has a characteristic of low reflectance. For this reason, as shown in FIG.
00 side, a CrOx layer 315 is formed, and a Cr layer 3
With the two-layer structure of forming 10, when used as a display device for observation from the transparent substrate 300 side, an easy-to-view display with reduced surface reflection can be realized.
Further, as shown in FIG. 14 (a), when a sandwich structure in which the CrOx layer 315 is provided on both the upper and lower sides of the Cr layer 310, when used as a display device with a backlight, reflection of the backlight can be prevented, and This has the advantage of preventing adverse effects on the photoelectric characteristics of the device. Here, the “wetting property” of the CrOx layer 315 is almost the same as the “wetting property” of the Cr layer 310. The present invention is also applicable to a black matrix substrate having such characteristics. In other words, when applied to a black matrix substrate having the structure shown in FIG. 13A, a structure in which a fluorine compound film 320 is formed on the upper surface of a Cr layer 310 as shown in FIG. It is possible to improve the "wettability", and when applied to a black matrix substrate having the structure shown in FIG. 14A, as shown in FIG.
A fluorine compound film 3 is further formed on the upper surface of the upper CrOx layer 315.
By adopting the structure in which 20 is formed, it is possible to improve the “wettability”. In short, the basic idea of the present invention is to form a chromium fluoride compound film on the uppermost layer of the black matrix layer to improve the "wettability".

Here, a modification of the embodiment of the above-described method of manufacturing a black matrix substrate will be described. In the above embodiment, as shown in FIG. 11A, oxygen ions O.sup. ⁺ Are irradiated from a Kauffman-type ion gun 30, and a part of the fluorine compound film 21 (exposed region of the mask plate 40) is changed to an oxygen compound film 22. (The structure shown in FIG. 11B), and etching is performed utilizing the difference in etching rate between the fluorine compound film 21 and the oxygen compound film 22.
The structure shown in (c) was obtained. In the modification described here,
In the stage shown in FIG. 11A, an inert gas ion such as an argon ion Ar ^{+ is} irradiated through the mask plate 40 instead of the oxygen ion O ⁺ . The fluorine compound film 21 is removed by the sputtering in the region irradiated with the inert gas ions. That is, of the fluorine compound film 21, the mask plate 40
Is removed by sputtering, and the underlying Cr material layer 20 is exposed. The irradiation conditions of the argon ions Ar ⁺ are exactly the same as the irradiation conditions of the oxygen ions O ⁺ in the above-described embodiment. Thereafter, if an etching method having a different etching rate (for example, etching using ceric ammonium nitrate) is performed between the Cr material layer 20 and the fluorine compound film 21, the exposed region of the Cr material layer 20 is exposed. Is removed by etching to obtain the same structure as in FIG.

Although the present invention has been described based on several embodiments illustrating the present invention, the present invention is not limited to these embodiments, and can be implemented in various other modes. For example, in the above-described embodiment, a black matrix substrate used for an active matrix type liquid crystal display device has been described as an example, but the present invention is also applicable to a black matrix substrate used for a simple matrix type liquid crystal display device. In the above-described embodiment,
Although a black matrix substrate of a type in which the respective color filter layers are arranged vertically and horizontally has been described as an example, the arrangement of the color filter layers is not limited to such an arrangement, and any arrangement such as a triangular arrangement and a stripe arrangement can be used. They may be arranged. In the above-described embodiment, as shown in FIG. 1, a black matrix layer is formed on the upper structure 1 side, and the upper structure 1 side is used as a black matrix substrate. Conversely, when a black matrix layer is formed on the lower structure 2 side (that is, on the active matrix substrate side on which the transistor element is formed) and the lower structure 2 side is used as an active matrix substrate and a black matrix substrate. Applicable. In short, the “black matrix substrate” in the present invention broadly includes a substrate on which a black matrix layer (a light-shielding layer having a pattern corresponding to a boundary region of a pixel) is formed. Applicable to Further, in the above-described manufacturing method, reactive particles of elements such as fluorine and oxygen are irradiated on the material layer as an ion beam. However, if the mask plate can be brought into close contact with the material layer, these elements can be converted into plasma gas. It may be supplied in the form and reacted.

[0040]

As described above, according to the black matrix substrate of the present invention, the fluorinated chromium compound film is formed on the upper surface of the black matrix layer made of chromium, so that the liquid color filter material can be transferred. It is possible to realize a black matrix substrate having a "wetting property" suitable for the substrate. Further, according to the manufacturing method of the present invention, a fluorine compound film and an oxygen compound film are formed on a chromium material layer, and patterning is performed by utilizing a difference in etching rate between the two films. The black matrix substrate can be manufactured by a simpler process than the manufacturing method used.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a basic structure of a general active matrix liquid crystal display device.

FIG. 2 is an upper structure 1 of the liquid crystal display device shown in FIG.
FIG. 3 is a detailed cross-sectional structural view of FIG.

FIG. 3 is a plan view of the black matrix layer 10 shown in FIG.

FIG. 4 is a sectional structural view showing only a black matrix substrate extracted from the upper structure 1 shown in FIG. 2;

FIG. 5 is a cross-sectional view showing a state in which a liquid color filter material is transferred to a black matrix substrate having an appropriate “wettability”.

FIG. 6 is a cross-sectional view showing a state in which a liquid color filter material is transferred to a black matrix substrate having poor wettability.

FIG. 7 is a cross-sectional view showing a state in which a liquid color filter material is transferred to a black matrix substrate having too good “wettability”.

FIG. 8 is a structural sectional view of a black matrix substrate according to one embodiment of the present invention.

9 is a cross-sectional view showing a state in which a liquid color filter material is transferred to the black matrix substrate shown in FIG.

FIG. 10 is a process cross-sectional view showing the first half of the process of the method for manufacturing a black matrix substrate according to the present invention.

FIG. 11 is a cross-sectional view showing a process in the latter half of the method for manufacturing a black matrix substrate according to the present invention.

FIG. 12 is a cross-sectional view illustrating an example in which the present invention is applied to a black matrix layer including only a Cr layer.

FIG. 13 is a sectional view showing an example in which the present invention is applied to a black matrix layer having a double structure of a Cr layer and a CrOx layer.

FIG. 14 is a cross-sectional view showing an example in which the present invention is applied to a black matrix layer having a sandwich structure in which a Cr layer is sandwiched between CrOx layers.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Upper structure 2 ... Lower structure 10 ... Black matrix layer 11 ... Cr layer 12 ... Fluorine compound film 15 ... Groove 20 ... Cr material layer 21 ... Fluorine compound film 22 ... Oxygen compound film 30 ... Reactive particle generation source ( 40 Kaufman-type ion gun) 40 mask plate 41 opening window 100 glass substrate 110 polarizing plate 120 color filter layer 121 liquid color filter material 125 protective layer 130 common electrode 200 glass substrate 210 polarizing plate 220 ... Display electrode 230 ... Transistor element 240 ... Scan line 250 ... Data line 300 ... Transparent substrate 310 ... Cr layer 315 ... CrOx layer 320 ... Fluorine compound film

──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. ⁷ , DB name) G02B 5/20 101 G02F 1/1335 505

Claims (6)

(57) [Claims] 1. A black matrix substrate having a light-shielding black matrix layer having a pattern corresponding to a boundary region of a pixel formed on a substrate, wherein at least an upper surface portion of the black matrix layer is made of a chromium fluoride compound layer. A black matrix substrate characterized by comprising. 2. A black matrix substrate having a light-shielding black matrix layer having a pattern corresponding to a boundary region of a pixel formed on a substrate, wherein the black matrix layer is a chromium layer, and at least one of the chromium layer A black matrix substrate comprising: a chromium fluoride compound layer formed on an upper surface. 3. The method of manufacturing a black matrix substrate according to claim 2, wherein a material layer made of chromium is formed on the substrate, and fluorine is applied to a surface of the material layer to form the material layer. A chromium fluoride compound film is formed on the surface of the substrate, and only a part of the fluorine compound film is exposed from the opening window by a mask plate having an opening window corresponding to a region where the black matrix layer is not formed. An oxygen compound film is formed by causing oxygen to act on the exposed portion, and the etching rates for the material layer and the oxygen compound film are sufficiently large to perform pattern formation as compared with the etching rates for the fluorine compound film. Etching is performed to remove the material layer in a region corresponding to the opening window of the mask plate. Method of manufacturing a black matrix substrate characterized in that to leave the material layer as a black matrix layer. 4. The method according to claim 3, wherein after forming a fluorine compound film on the surface of the material layer, oxygen ions are irradiated from a direction substantially perpendicular to the fluorine compound film from an ion gun. A black plate, wherein an oxygen compound film is formed in a region corresponding to an opening window of the mask plate by disposing a mask plate in the middle of the irradiation path so as to be substantially parallel to the fluorine compound film. Manufacturing method of matrix substrate. 5. The method for manufacturing a black matrix substrate according to claim 2, wherein a material layer made of chromium is formed on the substrate, and fluorine is applied to a surface of the material layer to form the material layer. A chromium fluoride compound film is formed on the surface of the substrate, and only a part of the fluorine compound film is exposed from the opening window by a mask plate having an opening window corresponding to a region where the black matrix layer is not formed. The fluorine compound film is removed by causing inert gas ions to act on the exposed portion, and the material layer is exposed in a region corresponding to the opening window. The etching rate for the material layer is lower than the etching rate for the fluorine compound film. Performing an etching that is large enough to form a pattern, removing a material layer in a region corresponding to an opening window of a mask plate, Serial fluorine compound film and a black matrix substrate manufacturing method, characterized by leaving the material layer covered to as a black matrix layer. 6. The method according to claim 5, wherein after forming a fluorine compound film on the surface of the material layer, the ion gun is irradiated with argon ions from a direction substantially perpendicular to the fluorine compound film. A mask plate in the middle of the irradiation path,
A method for manufacturing a black matrix substrate, comprising: arranging the fluorine compound film substantially parallel to the fluorine compound film to remove the fluorine compound film in a region corresponding to the opening window of the mask plate by a sputtering method.