JP3302121B2 - Manufacturing method of vacuum valve - Google Patents

Manufacturing method of vacuum valve

Info

Publication number
JP3302121B2
JP3302121B2 JP23067693A JP23067693A JP3302121B2 JP 3302121 B2 JP3302121 B2 JP 3302121B2 JP 23067693 A JP23067693 A JP 23067693A JP 23067693 A JP23067693 A JP 23067693A JP 3302121 B2 JP3302121 B2 JP 3302121B2
Authority
JP
Japan
Prior art keywords
insulating container
metal
active metal
manufacturing
vacuum valve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP23067693A
Other languages
Japanese (ja)
Other versions
JPH0785755A (en
Inventor
功 奥冨
昭次 丹羽
幹夫 大川
昌子 中橋
貴史 草野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP23067693A priority Critical patent/JP3302121B2/en
Publication of JPH0785755A publication Critical patent/JPH0785755A/en
Application granted granted Critical
Publication of JP3302121B2 publication Critical patent/JP3302121B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Ceramic Products (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は真空バルブの製造方法に
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a vacuum valve.

【0002】[0002]

【従来の技術】セラミックスは優れた耐熱性、絶縁性、
気密性を有する為、その特性を生かして種々の電気部品
材料として用いられている。例えば、真空バルブの絶縁
容器の場合、内部を真空に維持する為に厳密に気密性を
保ち得る必要があり、セラミックスを使用することが多
い。
2. Description of the Related Art Ceramics have excellent heat resistance, insulation properties,
Because of its airtightness, it is used as a material for various electric parts by utilizing its properties. For example, in the case of an insulating container of a vacuum valve, it is necessary to strictly maintain airtightness in order to maintain the inside in a vacuum, and ceramics are often used.

【0003】従来、このセラミックス製絶縁容器と封着
金属とを銀ロウ材を介して接合するに際して、一般には
セラミックス部材の端面に予めメタライズ層(例えば、
Mo−Mn)を付与させ、このメタライズ層を介して銀
ロウ付け接合を行っている。すなわち、セラミックスの
接合の方法としては、まずセラミックス部材にメタライ
ジングを施した後、金属とロウ付け接合する方法が行わ
れている。一方、メタライジング方法としては、一般に
は下記に示す方法が知られている。
Conventionally, when the ceramic insulating container and the sealing metal are joined via a silver brazing material, a metallized layer (for example,
Mo-Mn), and silver brazing is performed through the metallized layer. That is, as a method of joining ceramics, a method of first performing metallizing on a ceramic member and then brazing to a metal is performed. On the other hand, as a metallizing method, the following method is generally known.

【0004】(1)セラミックス母材表面にMo又はW
を主成分とする粉末を塗布し、還元雰囲気中で、例えば
1400〜1700℃に加熱して、セラミックス母材と反応させ
メタライズする方法。必要によりメタライズ層上にNi
などをメッキ処理する。
(1) Mo or W is formed on the surface of the ceramic base material.
Is applied in a reducing atmosphere, for example,
A method of heating to 1400 to 1700 ° C and reacting with the ceramic base material to metallize. Ni on the metallization layer if necessary
And the like.

【0005】(2)セラミックス母材表面にAuまたは
Ptを配し、それらに圧力を加えながら加熱してメタラ
イジングする方法。 (3)セラミックス母材上にTi,Zrなどの活性金属
とNi,Cuなどの遷移金属を配し、それらの合金の融
点より高い温度で熱処理してメタライジングする方法
(特開昭56−163093号)。
(2) A method of arranging Au or Pt on the surface of a ceramic base material and performing metallization by heating while applying pressure thereto. (3) A method of disposing an active metal such as Ti and Zr and a transition metal such as Ni and Cu on a ceramic base material, and performing a heat treatment at a temperature higher than the melting point of the alloy to perform metallizing (Japanese Patent Application Laid-Open No. 56-163093). issue).

【0006】[0006]

【発明が解決しようとする課題】しかしながら、上述し
たような方法の場合、まず(1)の方法ではメタライジ
ング時に高温度での処理を必要とするなど繁雑な工程に
問題がある。また、処理条件の僅かな変動でも十分な接
合強度が得難く、強度的にもばらつきが発生する。特に
ばらつきの問題は、気密性の低下に関わり、真空バルブ
の信頼性長期保証(遮断性能、耐圧性能)に重大な影響
を及ぼす。
However, in the case of the above-mentioned method, the method (1) has a problem in a complicated process such as requiring a high-temperature treatment at the time of metallizing. Further, it is difficult to obtain a sufficient bonding strength even with a slight change in the processing conditions, and the strength varies. In particular, the problem of variation relates to a decrease in airtightness, and has a significant effect on long-term reliability (breaking performance, pressure resistance performance) of a vacuum valve.

【0007】また(2)の方法では、高価な貴金属を使
用するため経済性に問題がある上に、密着性を高める目
的で高い圧力を必要とし好ましくない。また、生産性
(圧力を得る為の加圧部品がロウ付け炉中である空間を
占めること)にも問題がある。
In the method (2), an expensive noble metal is used, so that there is a problem in economical efficiency. In addition, a high pressure is required for the purpose of enhancing the adhesion, which is not preferable. There is also a problem with productivity (the pressurized part for obtaining pressure occupies a certain space in the brazing furnace).

【0008】一方、(3)の方法では、活性金属がセラ
ミックス母材上を濡らす為、特別な加圧を殆ど必要とせ
ず、かつ活性金属の効果によりセラミックス母材に対し
強い密着力でメタライジングすることができる。しか
し、金属部材とセラミックス部材とが十分に重なり合っ
た所では銀ロウは良好な接合を示すが、金属部材とセラ
ミックス部材との間に、極く僅かにでも隙間があったり
十分に重なり合っていない部分が存在すると良好にメタ
ライジングされない場合があり、気密接合性に問題があ
る。
On the other hand, in the method (3), since the active metal wets the ceramic base material, almost no special pressurization is required, and the effect of the active metal causes the metallizing with strong adhesion to the ceramic base material. can do. However, where the metal member and the ceramic member overlap sufficiently, the silver brazing shows good bonding, but there is a gap between the metal member and the ceramic member even if there is a slight gap or the portion does not sufficiently overlap. If metal is present, metallization may not be satisfactorily performed, and there is a problem in airtight bonding.

【0009】以上のように、(1)(2)(3)のいず
れの方法でも、メタライジングを施した後にセラミック
ス製絶縁容器と封着金属とをロウ接合するので、工程が
複雑となったり、接合強度、気密接合性のいずれか又は
両者が問題となったりしている。この原因はメタライジ
ング工程と、セラミックス製絶縁容器と封着金属金属部
材の接合とを別々に行う必要があるためと考えられる。
そこで、予め上記の様なメタライジングを施すことな
く、金属をセラミックスにロウ付けする技術が検討され
るようになってきた。
As described above, in any of the methods (1), (2), and (3), the metallizing is performed and then the ceramic insulating container and the sealing metal are brazed, so that the process becomes complicated. One or both of the bonding strength and the hermetic bonding may become a problem. This is probably because the metallizing step and the joining of the ceramic insulating container and the sealing metal member need to be performed separately.
Therefore, techniques for brazing metal to ceramics without prior metallization as described above have been studied.

【0010】金属部材とセラミックス部材とを接合する
方法として、次のような一段階接合法が既に知られてい
る(特開昭59-32628号)。すなわち、活性金属としてT
i又は/及びZrを含むAgロウ材料を用いる(これを
金属部材とセラミックス部材との間に挿入して接合す
る)。或いは、上記活性金属の薄板と上記Agロウ材と
を積層したAgロウ材料を用いる(これを金属部材とセ
ラミックス部材との間に挿入して接合する)。
As a method for joining a metal member and a ceramic member, the following one-step joining method is already known (Japanese Patent Laid-Open No. 59-32628). That is, T as an active metal
An Ag brazing material containing i or / and Zr is used (inserted and joined between a metal member and a ceramic member). Alternatively, an Ag brazing material obtained by laminating the thin plate of the active metal and the Ag brazing material is used (inserted and joined between the metal member and the ceramic member).

【0011】この一段階接合法は、メタライジングを必
要としないから、工程を簡略化することができる。しか
しながら、この一段階接合法の場合でも、上記(3)で
見られたものと同様の現象、すなわちAgロウ材料が金
属部材やセラミックス部材、特にセラミックス部材と十
分密着していないと、良好な接合強度と気密接合性が得
られない場合がみられる。十分な密着を得る為には、加
圧力の不均一性を是正する必要があり、強大な加圧を要
する問題点がある。
[0011] This one-step joining method does not require metallizing, so that the steps can be simplified. However, even in the case of this one-step bonding method, good bonding can be achieved if the same phenomenon as that observed in the above (3), that is, the Ag brazing material is not sufficiently adhered to the metal member or the ceramic member, particularly the ceramic member. In some cases, strength and airtight bonding cannot be obtained. In order to obtain sufficient adhesion, it is necessary to correct the non-uniformity of the pressing force, and there is a problem that a strong pressurization is required.

【0012】この欠点を改良した技術として、特開昭63
-49758号には、加圧力の不均一性を得る手段として、活
性金属Ti又は/及びZi粉末を使用し、これをセラミ
ックス部材面に塗布するものが開示されている。活性金
属を粉末化したことによって、Ti又は/及びZrが均
一にセラミックス部材に分布し、かつ密着している為、
接合強度と気密接合性とを兼備した接合状態を得てい
る。
[0012] As a technique for improving this disadvantage, Japanese Unexamined Patent Publication No.
Japanese Patent Application No. 49758 discloses a method in which active metal Ti and / or Zi powder is used and applied to the surface of a ceramic member as means for obtaining non-uniformity of the pressing force. Since the active metal is powdered, Ti and / or Zr are uniformly distributed and closely adhered to the ceramic member.
A joining state having both joining strength and airtight joining properties is obtained.

【0013】しかし、ポリビニールアルコール、エチル
セルローズなどのバインダを塗布したセラミックス部材
面に前記活性金属Ti又は/及びZr粉末を塗布する
際、エタノール、テトラリンなどの有機溶剤によって前
記活性金属粉末をペースト状態とするので、これらバイ
ンダや有機溶剤による環境問題の軽減化対策が課題とな
っている。本発明の目的は、メタライジングと気密接合
を同時に行うことがてき、信頼性、経済性や環境対策の
面で有益な真空バルブの製造方法を提供することにあ
る。
However, when the active metal Ti and / or Zr powder is applied to the surface of the ceramic member coated with a binder such as polyvinyl alcohol or ethyl cellulose, the active metal powder is pasteurized with an organic solvent such as ethanol or tetralin. Therefore, measures to reduce environmental problems caused by these binders and organic solvents have become an issue. An object of the present invention is to provide a method of manufacturing a vacuum valve which can perform metallizing and hermetic bonding at the same time, and is useful in terms of reliability, economy and environmental measures.

【0014】[0014]

【課題を解決するための手段】上記目的を達成するため
に本発明は、内部に接離可能な一対の電極を備えた真空
容器を形成するのに絶縁容器を封着金属で気密封着する
真空バルブの製造方法において、金属箔Cuの少なくと
も一表面に厚さ5〜1000μmのAgを被覆し、さらにA
gの少なくとも一方の面に平均粒径が0.01μm〜5μm
のTi,Zr、及びCrのうちの少なくとも1つから成
る活性金属層を表面被着してなる活性金属被着ロウ材料
を、絶縁容器と封着金属との間に、活性金属層が絶縁容
器側接合面と接触するように介挿設置し、絶縁容器内を
真空排気しながら絶縁容器と封着金属とのロウ接合を行
うことを要旨とする。
SUMMARY OF THE INVENTION In order to achieve the above object, the present invention provides a vacuum vessel having a pair of electrodes which can be separated from each other inside, and hermetically seals an insulating vessel with a sealing metal. In the manufacturing method of the vacuum valve, at least the metal foil Cu
Is coated on one surface with Ag having a thickness of 5 to 1000 μm.
g having an average particle size of 0.01 μm to 5 μm on at least one surface.
An active metal layer made of at least one of Ti, Zr, and Cr on a surface of an insulating container and a sealing metal between the insulating container and the sealing metal; The gist of the present invention is that a brazing connection between the insulating container and the sealing metal is performed while the inside of the insulating container is evacuated and evacuated while being inserted so as to contact the side joint surface.

【0015】[0015]

【作用】本発明においては、封着金属と絶縁容器とを接
合するに際して、予めTi,Zr,Cr粉等の活性金属
Agメッキを施した金属箔に被着する。これは単なる
被着であって、特にメタライジング処理を行わない点、
即ち予め形成されるのは活性金属層であってメタライズ
層ではない点、及びTi,Zr,Cr粉等の活性金属の
被着は、セラミックス製絶縁容器に行うのではなく金属
箔に被着する点が特徴である。また、Agメッキを施す
ことにより、金属箔と活性金属との間での化合物生成を
阻止軽減化させることができる。
In the present invention, when joining the sealing metal and the insulating container, an active metal such as Ti, Zr, Cr powder or the like is previously applied to the Ag-plated metal foil . This is just a deposit, no metallizing process in particular,
That is, the active metal layer is formed in advance, not the metallized layer, and the deposition of the active metal such as Ti, Zr, and Cr powder is performed not on the ceramic insulating container but on the metal foil. The feature is the point. Further, by performing the Ag plating, it is possible to prevent and reduce the generation of a compound between the metal foil and the active metal.

【0016】さらに詳細には、従来のものと比較して、
活性金属層の被着を金属箔に行うようにしたことによ
り、次のような作用効果を有することになる。 (1)真空バルブ用絶縁容器(例えばセラミックス部
材)は、大きさ(外径、内径)がまちまちである上に、
その高さも不定の為、品質管理上技術的問題が多い。そ
の為、活性金属層を大きさ、形状のまちまちのセラミッ
クス部材に被着する場合、不利益が多い。真空バルブで
は、例えば、厚さ5mm以下程度の微少厚さ、高さ30〜10
00mmのセラミックス製絶縁容器端面へのロウ付けが行わ
れている。この場合セラミックス製絶縁容器端面の被接
合面へのTi,Zr,Cr粉等の活性金属を被着する時
の作業性、メタライジング層の不均一性が課題となって
いる。
More specifically, as compared with the conventional one,
By applying the active metal layer to the metal foil, the following effects can be obtained. (1) Insulating containers for vacuum valves (for example, ceramic members) vary in size (outer diameter, inner diameter) and
Since the height is not fixed, there are many technical problems in quality control. Therefore, there are many disadvantages when the active metal layer is applied to ceramic members of various sizes and shapes. For a vacuum valve, for example, a very small thickness of about 5 mm or less and a height of 30 to 10 mm
Brazing to the end face of the ceramic insulating container of 00 mm is performed. In this case, the workability and the non-uniformity of the metallizing layer when attaching an active metal such as Ti, Zr, and Cr powder to the surface to be joined of the end surface of the insulating container made of ceramics are problems.

【0017】これらの課題に対して、金属箔を活性金属
層を有する接合用ロウ材構造とすることによって、ばら
つき、不均一性を回癖した。これは金属箔の少なくとも
一面に、活性状態にある活性金属(接合補助成分)を微
細均一に高度に分散付着させた接合用ロウ材を使用する
ことによって、良好な気密性と接合強度を有する真空バ
ルブとすることができる。
In order to solve these problems, the metal foil is formed into a bonding brazing material structure having an active metal layer, thereby causing variation and non-uniformity. This is a vacuum having good airtightness and bonding strength by using a bonding brazing material in which active metal (bonding auxiliary component) in an active state is finely and uniformly dispersed and adhered to at least one surface of a metal foil. It can be a valve.

【0018】(2)真空バルブ用セラミックス製絶縁容
器の被接合面へTi,Zr,Cr粉等の活性金属を被着
させる従来法の場合では、被着させたのみではTi,Z
r,Cr粉等の付着強さが十分でなく、どうしてもメタ
ライジング化の為の加熱処理を要する。
(2) In the case of the conventional method in which an active metal such as Ti, Zr, or Cr powder is applied to a surface to be joined of a ceramic insulating container for a vacuum valve, Ti and Z are simply applied.
The adhesion strength of r, Cr powder and the like is not sufficient, and a heat treatment for metallizing is absolutely necessary.

【0019】これに対して、金属箔の一面にTi,Z
r,Cr粉等の活性金属を被着させる本発明の製造方法
の場合では、金属箔の方がセラミックス部材より遥かに
軟質であることから、Ti,Zr,Crは金属箔に十分
よく馴染み、かつ密着する為、過度の加圧力を与えるこ
となしにTi,Zr,Cr粉は金属箔に微細均一に強く
付着分散する。その結果、メタライジング化の為の加熱
処理を必要としないで、良好な気密性と接合強度を得る
ことができる。
On the other hand, Ti, Z
In the case of the manufacturing method of the present invention in which an active metal such as r, Cr powder or the like is applied, since the metal foil is much softer than the ceramic member, Ti, Zr, and Cr are sufficiently familiar with the metal foil, In addition, due to the close contact, the Ti, Zr, and Cr powders are finely and uniformly adhered and dispersed to the metal foil without applying an excessive pressing force. As a result, good airtightness and bonding strength can be obtained without the need for heat treatment for metallizing.

【0020】(3)Ti,Zr,Cr粉等の活性金属粉
は、平均粒子直径(粒径)が0.01μm〜5μmの粒子状
であることを要する。粒径が0.01μm以下では粉体の活
性度が著しく大となり、ロウ材としての取扱いの点で技
術的な困難さがある。粒径が5μm以上では、Ti,Z
r,Cr等の活性金属粉の存在状態が粗な分布となり好
ましくない。
(3) The active metal powder such as Ti, Zr, and Cr powders must be in the form of particles having an average particle diameter (particle diameter) of 0.01 μm to 5 μm. If the particle size is 0.01 μm or less, the activity of the powder becomes extremely large, and there is technical difficulty in handling as a brazing filler metal. If the particle size is 5 μm or more, Ti, Z
The existence state of the active metal powders such as r and Cr is not preferable because of a coarse distribution.

【0021】(4)代表的なロウ材料として、779 ℃の
溶融温度を持つ共晶銀ロウ(72Wt%Ag−Cu合金)が
知られている。本発明の接合では、例えば、厚さ0.1mm
の板状の共晶銀ロウ板の一面(両面でも可)に、Ti,
Zr,Cr粉等の活性金属粉を付着させてなっている。
しかし、この構造に限定されるものではなく、前記共晶
銀ロウの構成成分Ag,Cuを別々にAg薄板、Cu薄
板として、このAg薄板(またはCu薄板)にTi,Z
r,Cr粉等を被着して積層一体化したの後、Cu薄板
を配して組成比率が72Wt%Ag−Cu合金となるように
しても良い。
(4) Eutectic silver brazing (72 Wt% Ag-Cu alloy) having a melting temperature of 779 ° C. is known as a typical brazing material. In the joining of the present invention, for example, a thickness of 0.1 mm
One side (or both sides) of eutectic silver brazing plate
Active metal powders such as Zr and Cr powders are adhered.
However, the present invention is not limited to this structure. The components Ag and Cu of the eutectic silver solder are separately formed into an Ag thin plate and a Cu thin plate.
After adhering r and Cr powders and laminating and integrating, a Cu thin plate may be arranged so that the composition ratio becomes 72 Wt% Ag-Cu alloy.

【0022】ロウ材料としては、銀系ロウ材料に限るこ
とはなく、本発明の接合用ロウ材構造をとることによっ
て、Au系ロウ材、Pd系ロウ材、Pt系ロウ材、Cu
系ロウ材、Ni系ロウ材であってもよい。
The brazing material is not limited to the silver brazing material, but can be made of the Au brazing material, the Pd brazing material, the Pt brazing material, the Cu brazing material by adopting the joining brazing material structure of the present invention.
It may be a brazing filler metal or a Ni brazing filler metal.

【0023】(5)セラミックス部材の被接合面へT
i,Zr,Cr粉等の活性金属を被着させる従来法の場
合では、セラミックス部材の被接合面へ行うバインダ塗
布作業時に、バインダが所定接合部分以外にも付着しや
すく、必要箇所以外に活性金属粉が被着する結果とな
る。更に、活性金属粉は有機溶剤によってペースト状態
としているため、有機溶剤の濃度によっては、セラミッ
クス部材の被接合面の所定接合部分以外にも流出する場
合があり、同様に、必要箇所以外に活性金属粉が被着す
る結果となる。この様な必要箇所以外への付着は、真空
バルブの耐電圧不良の原因となる。これらを防止する方
法として、従来法では、接合不必要部分には、繁雑なマ
スキングを施している。
(5) Apply T to the surface to be joined of the ceramic member.
In the case of the conventional method in which an active metal such as i, Zr, or Cr powder is adhered, at the time of the binder application work performed on the surface to be joined of the ceramic member, the binder easily adheres to a portion other than a predetermined joint portion, and the active material is activated at a portion other than a necessary portion. This results in the deposition of metal powder. Furthermore, since the active metal powder is made into a paste state with an organic solvent, depending on the concentration of the organic solvent, the active metal powder may flow out of a predetermined joining portion of the surface to be joined of the ceramic member. The result is powder deposition. Such adhesion to places other than the necessary places causes a withstand voltage failure of the vacuum valve. As a method of preventing these, in the conventional method, a complicated masking is applied to a portion which is not required to be joined.

【0024】本発明のロウ材構造では、接合必要部分に
のみロウ材が配置されるので、マスキング不要など工程
の簡略化、信頼性向上が得られている。 (6)セラミックス部材の被接合面へTi,Zr,Cr
粉等の活性金属を被着させる従来法の場合では、前記の
様に、ペースト、有機溶剤を使用しているので、加熱
炉、排気装置の内部、被接合物の表面の汚染、人体への
影響などが避けられないが、本発明方法では、ペース
ト、有機溶剤を使用していない為、これらの心配は生じ
ない。
In the brazing material structure according to the present invention, since the brazing material is disposed only at the portion where bonding is required, simplification of the process such as no masking and improvement in reliability are obtained. (6) Ti, Zr, Cr
In the case of the conventional method of depositing an active metal such as powder, as described above, since a paste and an organic solvent are used, the inside of the heating furnace, the exhaust device, the contamination of the surface of the article to be joined, Although influences and the like cannot be avoided, in the method of the present invention, these concerns do not arise because no paste or organic solvent is used.

【0025】(7)金属箔への活性金属の付着強度は、
ロウ材料としての安定性に影響を与える為、ロウ付け接
合後の接合強さ、気密性に重要である。この活性金属の
付着強度に及ぼす要因の1つとして、活性金属の清浄
度、被付着面の清浄度が挙げられる。しかし、一般にセ
ラミックス表面を完全に清浄化することは困難である上
に、通常セラミックスは金属との濡れ性が著しく劣る。
この為、被付着面が従来法の場合に用いているセラミッ
クス部材では、付着強度が劣る。
(7) The adhesion strength of the active metal to the metal foil is as follows:
Since it affects the stability as a brazing material, it is important for the joining strength and airtightness after brazing. One of the factors affecting the adhesion strength of the active metal is the cleanliness of the active metal and the surface to be adhered. However, in general, it is difficult to completely clean the ceramic surface, and usually, ceramics have extremely poor wettability with metal.
For this reason, the ceramic member used when the surface to be adhered is the conventional method has poor adhesion strength.

【0026】一方、被付着面として、本発明が対象とし
ているロウ材料(金属)では、良い濡れ性を示すことか
ら、前記セラミックス部材に対するより高い付着強度を
有するので安定した接合結果が得られる。
On the other hand, since the brazing material (metal), which is the object of the present invention, has good wettability as the surface to be adhered, it has a higher adhesion strength to the ceramic member, so that a stable bonding result can be obtained.

【0027】[0027]

【実施例】以下、本発明の一実施例を詳細に説明する。
本発明の製造方法の要旨は、必要によりAgなどのメッ
キ層を持たせた金属箔(板、線、粉末の総称)或るいは
封着金属の少なくとも一表面に、活性金属粉を微細均一
に高度に分散付着させてなる事にある。
DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below in detail.
The gist of the production method of the present invention is that the active metal powder is finely and uniformly coated on at least one surface of a metal foil (plate, wire, powder) or a sealing metal provided with a plating layer such as Ag if necessary. Highly dispersed and adhered.

【0028】したがって、どのような条件の活性金属粉
を、どのような手段で金属箔やロウ材表面に付着させる
かが重要である。前述の様に、金属箔の一表面にあるT
i,Zr,Crなどは、平均粒子直径(粒径)が0.01μ
m〜5μmの粒子状の活性金属粉より成る。予め用意し
た粉状の活性金属を使う時には、この様な活性金属粉
は、極めて活性であることから、保管から金属箔への被
着までの工程を厳重管理する必要がある。
Therefore, it is important to determine under what conditions the active metal powder is adhered to the surface of the metal foil or brazing material. As described above, the T on one surface of the metal foil
i, Zr, Cr, etc. have an average particle diameter (particle size) of 0.01μ.
It is composed of active metal powder having a particle size of m to 5 μm. When a powdery active metal prepared in advance is used, such an active metal powder is extremely active, so it is necessary to strictly control the steps from storage to application to a metal foil.

【0029】一方、他の方法として、塊状の活性金属を
使う時には、塊状のTi,Zr,Crを蒸気状とした
後、別途用意した金属箔(Ag,Cu,Ag−Cu板
等)に誘導し、その表面に凝固、被着させる方法として
も良い。
On the other hand, as another method, when using a lump of active metal, the lump of Ti, Zr, or Cr is made into a vapor state, and then the lump is guided to a separately prepared metal foil (Ag, Cu, Ag-Cu plate or the like). Then, a method of solidifying and attaching the surface may be used.

【0030】活性金属を蒸気状とする手段は、高エネル
ギー密度のビーム例えばエレクトロンビーム加熱、レー
ザ加熱やアーク加熱、抵抗加熱などのように、所定の蒸
気温度を得ることができれば良く、加熱の手段は問題と
しない。加熱の雰囲気は、活性金属が酸化燃焼するのを
防止するために、真空中、高純度ガス中など不活性雰囲
気中で行う。
The means for converting the active metal into a vapor form may be any means as long as a predetermined vapor temperature can be obtained, such as a high energy density beam such as electron beam heating, laser heating, arc heating, or resistance heating. Does not matter. The heating is performed in an inert atmosphere such as a vacuum or a high-purity gas in order to prevent the active metal from oxidizing and burning.

【0031】なお、活性金属粉の被着量は、気密性、接
合強度の確保に極めて重要であって、前記Ti,Zr,
Crの蒸気温度、蒸発源から基盤用ロウ材板付着面まで
の移送距離・時間・基盤用ロウ材板付着面の温度などに
よって制御する。
The amount of the active metal powder deposited is extremely important for ensuring airtightness and bonding strength.
It is controlled by the vapor temperature of Cr, the transfer distance and time from the evaporation source to the surface where the brazing material plate is adhered, the temperature of the surface where the brazing material plate is adhered, and the like.

【0032】原材料となる活性金属と、これを被着させ
る金属箔とを、同一の容器室内に配置しても良く、また
はこれらを別個の容器室内に配置して容器室間を連結部
で接続するように配置しても良い。
The active metal as a raw material and the metal foil to which it is applied may be arranged in the same container chamber, or they may be arranged in separate container chambers and connected between the container chambers by connecting portions. You may arrange so that it may be.

【0033】また、蒸発源から金属箔の付着面への誘導
中の活性金属に対して、電界、磁界、熱、気体などを印
加して、移送中の活性金属を加速或いは減速させたり、
必要とするエネルギーを与えたりすることは、ロウ材板
付着面への活性金属の付着量や付着分布度を制御した
り、付着強度を高めたりするのに有効となる。
An electric field, a magnetic field, heat, a gas, or the like is applied to the active metal being guided from the evaporation source to the surface to which the metal foil is attached, thereby accelerating or decelerating the active metal being transferred.
Providing the required energy is effective for controlling the amount and distribution of the active metal on the surface where the brazing material plate is attached, and for increasing the adhesion strength.

【0034】この様にして、活性金属を蒸発源から基盤
用ロウ材板付着面へ、移動被着させることによって得た
金属箔面の活性金属粉は、ロウ付け作業に好ましい程度
の清浄度と活性度と量とを維持している。活性金属粉を
セラミックス部材の被接合面に塗布する従来法、あるい
はロウ材板に塗布する方法では、ばらつきが多く、ロウ
付け作業に好ましい程度の清浄度と活性度と量とを確保
することができない。
In this manner, the active metal powder on the metal foil surface obtained by moving and depositing the active metal from the evaporation source to the surface where the brazing material plate is adhered has a cleanness that is preferable for the brazing operation. Maintains activity and quantity. In the conventional method of applying active metal powder to the surface to be joined of the ceramic member or the method of applying the active metal powder to a brazing material plate, there are many variations, and it is possible to ensure cleanliness, activity, and amount that are favorable for brazing work. Can not.

【0035】このような本製造方法により、次のような
各種条件で絶縁容器と封着金属とを接合したので、表1
〜表4を参照しながら、これらについて具体的に説明す
る。なお、表1または表2の#1は金属箔Cuの上に、
30μmのAgメッキを施し、その上に活性金属を被着さ
れたもの、#2は活性金属Tiの被着に際して、同時に
Cuを被着したもの、#3は活性金属Tiの被着の後、
その上にCuを被着したものを示す。
According to the present manufacturing method, the insulating container and the sealing metal were joined under the following various conditions.
These will be specifically described with reference to Table 4. In addition, # 1 of Table 1 or Table 2 is on the metal foil Cu,
30 μm Ag plating, active metal deposited thereon, # 2 when active metal Ti was deposited simultaneously with Cu deposition, # 3 after active metal Ti deposition,
An example in which Cu is applied thereon is shown.

【0036】[0036]

【表1】 [Table 1]

【0037】[0037]

【表2】 [Table 2]

【0038】[0038]

【表3】 [Table 3]

【0039】[0039]

【表4】 [Table 4]

【0040】(実施例1〜4,比較例1〜2)外直径
6.7cm,内直径 5.6cm,高さ10cmのセラミックス製絶縁
容器(主成分:AL23 )を用意し、その端面の表面
粗さを約 0.2μmに研磨した。封着金属として、板厚さ
2mmの42%Ni−Fe合金を用意した。金属箔として、
外直径6.7 cm,内直径 5.6cm,板厚さ 0.1mmのCu箔を
用意した。Agろう材料として、厚さ0.1mm の72%Ag
−Cu合金板を用意した。
(Examples 1-4, Comparative Examples 1-2) Outer Diameter
A ceramic insulating container (main component: AL 2 O 3 ) having a size of 6.7 cm, an inner diameter of 5.6 cm and a height of 10 cm was prepared, and the surface roughness of the end face was polished to about 0.2 μm. A 42% Ni-Fe alloy having a thickness of 2 mm was prepared as a sealing metal. As metal foil,
A Cu foil having an outer diameter of 6.7 cm, an inner diameter of 5.6 cm, and a plate thickness of 0.1 mm was prepared. 72% Ag with 0.1mm thickness as Ag brazing material
-A Cu alloy plate was prepared.

【0041】アークメルトしたTiターゲットを活性金
属源とし、加熱手段として、アーク放電、イオンプレー
ティング、電子衝撃、スパッタリング等を適宜選択また
は組合わせて、蒸発またはイオン化させたTiを前記金
属箔(Cu箔)面上まで誘導する。蒸発またはイオン化
させる為の注入エネルギーを制御しながら、金属箔面上
でのTi粒子の平均粒子直径を0.01〜20μm(実施例1
〜4,比較例1〜2)の範囲とした。作業時間を制御し
ながら、金属箔面上でのTi粒子の量を約1mg/cm2
着させた。
An arc-melted Ti target is used as an active metal source, and as a heating means, arc discharge, ion plating, electron impact, sputtering, etc. are appropriately selected or combined, and the evaporated or ionized Ti is converted into the metal foil (Cu). (Foil) to the surface. The average particle diameter of the Ti particles on the metal foil surface was controlled to 0.01 to 20 μm while controlling the injection energy for evaporation or ionization (Example 1).
-4, Comparative Examples 1-2). While controlling the working time, the amount of Ti particles on the metal foil surface was about 1 mg / cm 2 .

【0042】次いで、金属箔上のTiがセラミックス製
絶縁容器の端面に密着する様にして配置し、水素中雰囲
気で1020℃の温度で封着金属とセラミックス製絶縁容器
との気密封着接合を行った。この場合、接合の為のロウ
材料は、金属箔とセラミックス部材との間、金属箔と金
属部材(封着金属)との間のいずれの側に配置しても問
題ない。また、金属箔は平板状であっても、また波板状
であっても問題ない。
Then, the Ti on the metal foil is placed so as to be in close contact with the end surface of the ceramic insulating container, and the sealing metal and the ceramic insulating container are hermetically bonded at a temperature of 1020 ° C. in a hydrogen atmosphere. went. In this case, there is no problem if the brazing material for bonding is arranged on any side between the metal foil and the ceramic member or between the metal foil and the metal member (sealing metal). There is no problem if the metal foil is flat or corrugated.

【0043】気密封着接合後のセラミックス製絶縁容器
をインストロン式万能試験機で金属/セラミックス接合
部分の引き外し力を測定した。上記寸法のセラミックス
製絶縁容器を使用した時の引外し力が700kg 以上を合格
とした。
The peeling force of the metal / ceramic bonding portion of the ceramic insulating container after the hermetic bonding was measured using an Instron universal testing machine. A tripping force of 700 kg or more when using a ceramic insulating container of the above dimensions was judged to be acceptable.

【0044】また、気密性の評価は、Heリークディテ
クターを使用して、リーク量が5×10-10 (Torr・L/
sec )以下を合格とした。また、耐電圧特性評価は、前
記気密封着接合後のセラミックス製絶縁容器の両端に、
0〜120KV のインパルス電圧を10回印加した時の耐電圧
特性を測定し、絶縁破壊を示したときの電圧値、絶縁破
壊回数を示した。絶縁破壊電圧値が95KVで絶縁破壊回数
がゼロの場合を合格とした。
The airtightness was evaluated by using a He leak detector to determine that the leak amount was 5 × 10 −10 (Torr · L /
sec) The following were accepted. In addition, withstand voltage characteristics evaluation was performed at both ends of the ceramic insulating container after the hermetically sealed bonding.
The withstand voltage characteristics when an impulse voltage of 0 to 120 KV was applied 10 times were measured, and the voltage value and the number of times of dielectric breakdown when dielectric breakdown was indicated were shown. A case where the dielectric breakdown voltage value was 95 KV and the number of times of dielectric breakdown was zero was regarded as acceptable.

【0045】これらの評価結果を表1〜表2に示した
(実施例1〜4,比較例1〜2)。表1〜表2から明ら
かな様に、金属箔面上にTi粒子がない例では、接合強
度(引外し力)が低く問題を生じ易いのみならず、接合
が十分出ない事に起因する内部真空度の低下で、所定の
耐電圧特性を維持出来ない(比較例1)。Ti粒子の平
均粒子直径が5μm以上では、金属箔面上へのTi粒子
の均一分布性に問題を生じ易くなる為、気密性にばらつ
きを生じかつ接合強度にもばらつきが見られるようにな
る(比較例2)。したがって、金属箔面上でのTi粒子
の平均粒子直径は、0.01〜5μmの範囲が好ましい(実
施例1〜4)。またこの範囲なら、所定の耐電圧特性を
維持する。
The evaluation results are shown in Tables 1 and 2 (Examples 1 to 4 and Comparative Examples 1 and 2). As is clear from Tables 1 and 2, in the case where there is no Ti particle on the metal foil surface, not only the bonding strength (tripping force) is low, and the problem is easily caused, but also the internal due to insufficient bonding. The predetermined withstand voltage characteristics cannot be maintained due to a decrease in the degree of vacuum (Comparative Example 1). If the average particle diameter of the Ti particles is 5 μm or more, a problem is likely to occur in the uniform distribution of the Ti particles on the metal foil surface, so that the airtightness varies and the bonding strength also varies ( Comparative Example 2). Therefore, the average particle diameter of the Ti particles on the metal foil surface is preferably in the range of 0.01 to 5 μm (Examples 1 to 4). Further, within this range, a predetermined withstand voltage characteristic is maintained.

【0046】(実施例5〜6,比較例3)Cu金属箔と
Ti電極とを対向させ、電極間の距離、電極間の平行
度、アーク放電時のアーク電流、印加電圧など調整しな
がら、Cu金属箔の一面に平均粒子直径0.05μmの活性
金属(Ti)を被着させた。被着量を 0.1〜10mg/cm2
(実施例5〜6)、45mg/cm2 (比較例3)の範囲で選
択制御した。この様にして、活性金属(Ti)を金属箔
(Cu)の一方の面上に所定量被着させ、Tiが被着し
ている面をセラミックス部材(セラミックス製絶縁容
器)と密着する様に配置、金属箔(Cu)の他方の面を
金属部材(封着金属)と接する様に配置した。すなわ
ち、活性金属層を有する金属箔を両部材間に介挿する様
にして配置した。この様にして水素中雰囲気で1020℃の
温度で封着金属とセラミックス製絶縁容器との気密封着
接合を行った(実施例5〜6,比較例3)。
(Examples 5 to 6 and Comparative Example 3) A Cu metal foil and a Ti electrode were opposed to each other, and the distance between the electrodes, the parallelism between the electrodes, the arc current at the time of arc discharge, the applied voltage, etc. were adjusted. An active metal (Ti) having an average particle diameter of 0.05 μm was applied to one surface of the Cu metal foil. 0.1 ~ 10mg / cm 2
(Examples 5 to 6) and 45 mg / cm 2 (Comparative Example 3) were selectively controlled. In this way, a predetermined amount of the active metal (Ti) is applied to one surface of the metal foil (Cu), and the surface on which the Ti is applied is brought into close contact with the ceramic member (ceramic insulating container). Arrangement: The other surface of the metal foil (Cu) was arranged so as to be in contact with the metal member (sealing metal). That is, a metal foil having an active metal layer was disposed so as to be interposed between both members. In this way, the hermetically sealed bonding between the sealing metal and the ceramic insulating container was performed at a temperature of 1020 ° C. in a hydrogen atmosphere (Examples 5 to 6, Comparative Example 3).

【0047】そして、気密封着接合後のセラミックス製
絶縁容器を前記と同様にして評価した。これらの評価結
果を表1〜表2に示した。表1〜表2から明らかな様
に、金属箔面上での活性金属の被着量が 0.1〜10mg/cm
2 の場合には、安定した接合強度、気密性と所定の耐電
圧特性を維持する。しかし、被着量が45mg/cm2 の場合
には、セラミックス部材面上の不必要部分にまで活性金
属が被着する事が多く見られるようになり、その結果接
合強度、気密性は問題ないものの耐電圧特性劣化(耐電
圧値の低下、ばらつきの発生)が著しい。したがって、
金属箔面上での活性金属の被着量は 0.1〜10mg/cm2
範囲が好ましい(実施例5〜6)。
Then, the ceramic insulating container after the hermetic bonding was evaluated in the same manner as described above. The evaluation results are shown in Tables 1 and 2. As is clear from Tables 1 and 2, the amount of the active metal deposited on the metal foil surface was 0.1 to 10 mg / cm.
In the case of 2 , stable bonding strength, airtightness and predetermined withstand voltage characteristics are maintained. However, when the deposition amount is 45 mg / cm 2 , the active metal is often deposited on unnecessary portions on the ceramic member surface, and as a result, there is no problem in the bonding strength and airtightness. Degradation of withstand voltage characteristics (reduction of withstand voltage value, occurrence of variation) is remarkable. Therefore,
The amount of the active metal deposited on the metal foil surface is preferably in the range of 0.1 to 10 mg / cm 2 (Examples 5 to 6).

【0048】(実施例7〜10)上記実施例1〜6,比較
例1〜3では、活性金属として、Tiを選択した例につ
いて示した。
(Examples 7 to 10) In the above Examples 1 to 6 and Comparative Examples 1 to 3, examples were given in which Ti was selected as the active metal.

【0049】しかし、本発明はこれに限ることなく、活
性金属の種類は、Tiに限ることなくZr,Cr(実施
例7〜8)においても、またTi−Zr,Ti−Cr
(実施例9〜10)のごとき混合であっても同様の効果を
得た。
However, the present invention is not limited to this, and the type of active metal is not limited to Ti, but may be Zr, Cr (Examples 7 to 8), Ti-Zr, Ti-Cr.
Similar effects were obtained even in the case of mixing as in (Examples 9 to 10).

【0050】(実施例11〜15)上記実施例1〜10,比較
例1〜3では、金属箔として、Cuを選択した例につい
て示した。
(Examples 11 to 15) In Examples 1 to 10 and Comparative Examples 1 to 3, examples were given in which Cu was selected as the metal foil.

【0051】しかし、本発明はこれに限ることなく、金
属箔の種類は、Cuに限ることなくAg(実施例11)に
おいても、またAg−Cu,Ag−Cu−In,Ag−
Cu−Sn,Cu−Mn(実施例12〜15)のごとき混合
であっても同様の効果を得た。
However, the present invention is not limited to this, and the type of metal foil is not limited to Cu, but may be Ag (Example 11), Ag-Cu, Ag-Cu-In, Ag-
Similar effects were obtained even with a mixture such as Cu-Sn and Cu-Mn (Examples 12 to 15).

【0052】なお、ここで使用した金属箔自体は、優秀
なロウ材料でもあることから、気密接合作業においては
接合の為のロウ材料を介挿しなくても良い。 (実施例16〜18)上記実施例1〜15,比較例1〜3で
は、金属箔面上に直接活性金属Tiを付着させた状態で
使用した。
Since the metal foil used here is also an excellent brazing material, it is not necessary to insert a brazing material for joining in the hermetic joining operation. (Examples 16 to 18) In Examples 1 to 15 and Comparative Examples 1 to 3, the active metal Ti was directly adhered to the metal foil surface.

【0053】しかし、本発明はこれに限ることなく、金
属箔と活性金属との間での化合物生成を阻止軽減化させ
る目的で、金属箔面上に例えば30μm程度の厚さのAg
メッキを施すことは、気密性、接合強度の一層の安定化
の為に有益である(実施例16)。すなわち、温度を上げ
てゆくと金属箔Cu上のAgメッキがとけて、活性金属
Tiと混合し、Ag−Cu−Tiを形成、未だ溶けてい
ない金属箔Cuが存在していると、このCuが重し(加
重)として作用する結果、液体状態にあるAg−Cu−
Tiをセラミックス部材(セラミックス製絶縁容器)に
押し付ける。液体状態にある為、細部にまで密着・浸入
する様に拡がり、気密封着される。
However, the present invention is not limited to this, and for the purpose of inhibiting and reducing the formation of a compound between the metal foil and the active metal, an Ag layer having a thickness of, for example, about 30 μm is formed on the metal foil surface.
Plating is useful for further stabilizing the airtightness and bonding strength (Example 16). That is, when the temperature is increased, the Ag plating on the metal foil Cu is melted and mixed with the active metal Ti to form Ag-Cu-Ti. If the metal foil Cu not yet melted is present, this Cu Acts as a weight (weighting), so that Ag-Cu-
Ti is pressed against a ceramic member (ceramic insulating container). Because it is in a liquid state, it spreads so as to closely contact and penetrate into the details, and is hermetically sealed.

【0054】金属箔がCuの場合には、Agメッキの厚
さ(Ag量)を、溶解の後にAg−Cuロウ材料の組成
になる様調整されている時には、ロウ材料を介挿しなく
ても接合作業が可能である。
When the metal foil is made of Cu, when the thickness (Ag amount) of the Ag plating is adjusted so as to become the composition of the Ag-Cu brazing material after dissolution, it is not necessary to insert the brazing material. Joining work is possible.

【0055】また、金属箔面上に活性金属(Ti)を被
着させるにおいて、Ti被着と同時にCuを混合被着さ
せることは、Tiの低融点化に有益であり、その結果気
密性の信頼度の向上に寄与している(実施例17)。
Further, when depositing the active metal (Ti) on the surface of the metal foil, it is beneficial to lower the melting point of Ti by mixing and depositing Cu simultaneously with the deposition of Ti. This contributes to improvement in reliability (Example 17).

【0056】また、金属箔面上に活性金属(Ti)を被
着させるにおいて、Ti被着の後で金属箔面上にCuを
被覆しても良い(実施例18)。 (実施例19〜21)上記実施例1〜18,比較例1〜3で
は、セラミックス部材(セラミックス製絶縁容器)と金
属部材(封着金属)との間に、金属箔(Cu,Ag,A
g−Cu−In,Ag−Cu−Sn,Cu−Mn)を介
挿した。
In depositing the active metal (Ti) on the metal foil surface, Cu may be coated on the metal foil surface after the Ti deposition (Example 18). (Examples 19 to 21) In Examples 1 to 18 and Comparative Examples 1 to 3, a metal foil (Cu, Ag, A) was placed between a ceramic member (ceramic insulating container) and a metal member (sealing metal).
g-Cu-In, Ag-Cu-Sn, Cu-Mn).

【0057】しかし、本発明はこれに限ることなく、C
u−Ni,Fe−Co,Fe−Niなどの金属部材(封
着金属)表面に直接活性金属Tiをさせても良い(実施
例19〜21)。
However, the present invention is not limited to this.
Active metal Ti may be directly applied to the surface of a metal member (sealing metal) such as u-Ni, Fe-Co, Fe-Ni (Examples 19 to 21).

【0058】[0058]

【発明の効果】以上のように本発明によれば、絶縁容器
と封着金属とを接合するのに、金属箔Cuの少なくとも
一表面に厚さ5〜1000μmのAgを被覆し、さらにAg
少なくとも一方の面に、平均粒径が0.01μm〜5μm
のTi,Zr、及びCrのうちの少なくとも1つから成
る活性金属層を表面被着してなる活性金属被着ロウ材料
を、絶縁容器と封着金属との間に、活性金属層が絶縁容
器側接合面と接触するように介挿設置し、絶縁容器内を
真空排気しながら絶縁容器と封着金属とのロウ接合を行
うようにしたので、メタライジングと気密接合を同時に
行うことができ、信頼性、経済性、環境性を改善するこ
とができる。
As described above, according to the present invention, at least the metal foil Cu is used for joining the insulating container and the sealing metal.
One surface is coated with a 5- to 1000-μm-thick Ag, and the Ag
On at least one surface of an average particle size of 0.01μm~5μm
An active metal layer made of at least one of Ti, Zr, and Cr on a surface of an insulating container and a sealing metal between the insulating container and the sealing metal; Since it was inserted and installed so as to be in contact with the side joint surface, and the inside of the insulating container was evacuated and the brazing was performed between the insulating container and the sealing metal, metallizing and airtight joining could be performed simultaneously, It can improve reliability, economy, and environmental friendliness.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 中橋 昌子 神奈川県川崎市幸区小向東芝町1番地 株式会社東芝 研究開発センター内 (72)発明者 草野 貴史 東京都府中市東芝町1番地 株式会社東 芝 府中工場内 (56)参考文献 特開 平1−102822(JP,A) (58)調査した分野(Int.Cl.7,DB名) H01H 33/66 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Masako Nakahashi 1 Toshiba-cho, Komukai Toshiba-cho, Saisaki-ku, Kawasaki-shi, Kanagawa Prefecture (72) Inventor Takashi Kusano 1-Toshiba-cho, Fuchu-shi, Tokyo (56) References JP-A-1-102822 (JP, A) (58) Field surveyed (Int. Cl. 7 , DB name) H01H 33/66

Claims (5)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 内部に接離可能な一対の電極を備えた真
空容器を形成するのに絶縁容器を封着金属で気密封着す
る真空バルブの製造方法において、金属箔Cuの少なく
とも一表面に厚さ5〜1000μmのAgを被覆し、さらに
前記Agの少なくとも一方の面に平均粒径が0.01μm〜
5μmのTi,Zr、及びCrのうちの少なくとも1つ
から成る活性金属層を表面被着してなる活性金属被着ロ
ウ材料を、前記絶縁容器と封着金属との間に、活性金属
層が前記絶縁容器側接合面と接触するように介挿設置
し、前記絶縁容器内を真空排気しながら絶縁容器と封着
金属とのロウ接合を行うことを特徴とする真空バルブの
製造方法。
1. A method for manufacturing a vacuum interrupter to hermetically sealed insulating container sealing metal to form a vacuum vessel equipped with a detachably pair of electrodes inside, less metal foil Cu
In addition, one surface is coated with Ag having a thickness of 5 to 1000 μm,
The average particle diameter on at least one surface of the Ag is 0.01 μm or more.
An active metal-coated brazing material having a surface-coated active metal layer made of at least one of Ti, Zr, and Cr having a thickness of 5 μm is provided between the insulating container and the sealing metal. A method of manufacturing a vacuum valve, comprising interposing and installing the insulating container so as to be in contact with the insulating container side joining surface, and performing brazing between the insulating container and a sealing metal while evacuating the inside of the insulating container.
【請求項2】 内部に接離可能な一対の電極を備えた真
空容器を形成するのに絶縁容器を封着金属で気密封着す
る真空バルブの製造方法において、金属箔の少なくとも
一方の面に平均粒径が0.01μm〜5μmのTi,Zr、
及びCrのうちの少なくとも1つから成る活性金属層を
表面被着し、前記活性金属層の表面に酸化または汚染の
進行を抑制する保護層を被着した活性金属被着ロウ材料
を、前記絶縁容器と封着金属との間に、活性金属層が前
記絶縁容器側接合面と接触するように介挿設置し、前記
絶縁容器内を真空排気しながら絶縁容器と封着金属との
ロウ接合を行うことを特徴とする真空バルブの製造方
法。
2. A true having a pair of electrodes which can be separated from each other inside.
Hermetically seal insulating container with sealing metal to form empty container
In the method for manufacturing a vacuum valve, at least
Ti, Zr having an average particle size of 0.01 μm to 5 μm on one surface;
And an active metal layer comprising at least one of Cr and
Surface coating, oxidation or contamination of the surface of the active metal layer
Active metallized brazing material coated with a protective layer that inhibits progress
Between the insulating container and the sealing metal,
Inserted and installed so as to contact the insulating container side joint surface,
While the inside of the insulating container is evacuated,
Manufacturing method of vacuum valve characterized by performing brazing
Law.
【請求項3】 前記活性金属被着ロウ材料の表面に、酸
化または汚染の進行を抑制する保護層を具備したことを
特徴とする請求項1記載の真空バルブの製造方法。
3. An active metal-deposited brazing material having an acid on its surface.
That a protective layer that suppresses the progress of
The method for manufacturing a vacuum valve according to claim 1, wherein:
【請求項4】 前記活性金属層中には、平均が0.01μm
〜5μmの粒子状を呈するロウ材料主要構成成分である
Ag又はCuを含有していることを特徴とする請求項1
〜3のいずれかに記載の真空バルブの製造方法。
4. An average thickness of the active metal layer is 0.01 μm.
It is a main component of wax material exhibiting a particle size of ~ 5 μm.
2. The composition according to claim 1, wherein the composition contains Ag or Cu.
4. The method for producing a vacuum valve according to any one of claims 1 to 3.
【請求項5】 内部に接離可能な一対の電極を備えた真
空容器を形成するのに絶縁容器を封着金属で気密封着す
る真空バルブの製造方法において、金属箔の少なくとも
一方の面に平均粒径が0.01μm〜5μmのTi,Zr、
及びCrのうちの少なくとも1つから成り、平均が0.01
μm〜5μmの粒子状を呈するロウ材料主要構成成分で
あるAg又はCuを含有した活性金属層を表面被着して
なる活性金属被着ロウ材料を、前記絶縁容器と封着金属
との間に、活性金属層が前記絶縁容 器側接合面と接触す
るように介挿設置し、前記絶縁容器内を真空排気しなが
ら絶縁容器と封着金属とのロウ接合を行うことを特徴と
する真空バルブの製造方法。
5. A true having a pair of electrodes which can be separated from each other inside.
Hermetically seal insulating container with sealing metal to form empty container
In the method for manufacturing a vacuum valve, at least
Ti, Zr having an average particle size of 0.01 μm to 5 μm on one surface;
And at least one of Cr and an average of 0.01
It is the main constituent of wax material with particle size of μm ~ 5μm.
An active metal layer containing a certain Ag or Cu
Activated metal-deposited brazing material, said insulating container and sealing metal
Between the active metal layer to contact with the insulating container side bonding surface
So that the inside of the insulating container is evacuated and evacuated.
It is characterized by performing brazing between the insulating container and the sealing metal.
Method of manufacturing a vacuum valve.
JP23067693A 1993-09-17 1993-09-17 Manufacturing method of vacuum valve Expired - Fee Related JP3302121B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23067693A JP3302121B2 (en) 1993-09-17 1993-09-17 Manufacturing method of vacuum valve

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23067693A JP3302121B2 (en) 1993-09-17 1993-09-17 Manufacturing method of vacuum valve

Publications (2)

Publication Number Publication Date
JPH0785755A JPH0785755A (en) 1995-03-31
JP3302121B2 true JP3302121B2 (en) 2002-07-15

Family

ID=16911563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23067693A Expired - Fee Related JP3302121B2 (en) 1993-09-17 1993-09-17 Manufacturing method of vacuum valve

Country Status (1)

Country Link
JP (1) JP3302121B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09106743A (en) * 1995-10-11 1997-04-22 Shibafu Eng Kk Vacuum bulb
JP4537569B2 (en) * 2000-04-24 2010-09-01 三菱電機株式会社 Vacuum insulated switchgear and manufacturing method thereof

Also Published As

Publication number Publication date
JPH0785755A (en) 1995-03-31

Similar Documents

Publication Publication Date Title
US4917642A (en) Air-tight ceramic container
US5045400A (en) Composition for and method of metallizing ceramic surface, and surface-metallized ceramic article
JP3302121B2 (en) Manufacturing method of vacuum valve
KR100459748B1 (en) Electrostatic chuck and method for the fabrication thereof
JP2752079B2 (en) Method of manufacturing airtight ceramic container
JPH08245275A (en) Production of laminated brazing filler metal and joining method
JP2642386B2 (en) Vacuum valve and method of manufacturing the same
JPH08171839A (en) Manufacture of vacuum bulb
FR2585730A1 (en) Process for deposition of metals as a thin layer on a nonmetallic substrate, with intermediate deposition of hydrides by reactive cathodic sputtering
JPH03254030A (en) Joining method for vacuum valve and vacuum valve
JPH049752B2 (en)
JPH10255606A (en) Manufacture of vacuum valve
JP2755659B2 (en) Vacuum valve
JPH09231884A (en) Vacuum valve
JPH06239668A (en) Soldering material for joining and its production
JPH06183851A (en) Soldering pretreatment of ceramic
JP2650460B2 (en) Joining method of alumina ceramic and metal
JPH06176670A (en) Manufacture of vacuum vessel
JPH08249992A (en) Manufacture of vacuum valve
KR910001351B1 (en) Method for producing vacuum valve used ceramic vessel
JPH01264127A (en) Manufacture of vacuum valve
JPH0779014B2 (en) Vacuum valve manufacturing method
JP3313650B2 (en) Pressure contact type semiconductor device
JP2024045136A (en) Method for producing metal-ceramic substrate, solder system, and metal-ceramic substrate produced using the method
JPH03122062A (en) Semiconductor device and production therefor

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080426

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090426

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100426

Year of fee payment: 8

LAPS Cancellation because of no payment of annual fees