JP3299240B2 - Pattern formation method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pattern forming method, and more particularly, to a method for forming a resist pattern for forming a semiconductor element or a semiconductor integrated circuit on a semiconductor substrate by using exposure light having a wavelength of 1 nm to 180 nm. And a method for forming the same.

[0002]

2. Description of the Related Art At present, a dynamic random access memory (DRAM) of 64 megabits or 0.25 .mu.m
In order to form a large-capacity semiconductor integrated circuit represented by a logic device or a system LSI having a rule of 0.18 μm, a resist material containing a polyhydroxystyrene derivative as a main component is used, and a KrF excimer laser (wavelength : 248 nm band) as exposure light to form a resist pattern.

In order to manufacture a 256 Mbit DRAM, a 1 Gigabit DRAM, a system LSI, or the like having a rule of 0.15 μm to 0.13 μm, ArF having a shorter wavelength than a KrF excimer laser is used as exposure light. Development of a pattern forming method using an excimer laser (wavelength: 193 nm band) is underway.

Incidentally, a resist material containing a polyhydroxystyrene derivative as a main component has a high absorptivity to the light in the wavelength band of 193 nm of the aromatic ring contained therein.
Since the exposure light in the 3 nm band cannot reach the bottom of the resist film uniformly, a good pattern shape cannot be obtained. Therefore, a resist material containing a polyhydroxystyrene derivative as a main component cannot be used for an ArF excimer laser.

Therefore, when an ArF excimer laser is used as exposure light, a resist material mainly containing a polyacrylic acid derivative having no aromatic ring is used.

On the other hand, X-rays, electron beams (EB) and the like are being studied as exposure light in a pattern forming method capable of coping with higher resolution.

[0007]

However, when using X-rays as exposure light, there are many problems in terms of manufacturing an exposure apparatus and a mask. Further, when EB is used as the exposure light, there is a problem in terms of throughput, so that there is a problem that it is not suitable for mass production.
Therefore, X-rays and EB are not preferred as exposure light.

For the above reasons, finer than 0.13 μm
To form a fine resist pattern,
Xe having a shorter wavelength than the ArF excimer laser_TwoLes
Laser light (wavelength: 172 nm band), F_TwoLaser light (wavelength:
157 nm band), Kr_TwoLaser light (wavelength: 146 nm
Band), ArKr laser light (wavelength: 134 nm band), Ar
_TwoLaser light (wavelength: 126 nm band) or soft X-ray (wavelength:
13nm band, 11nm band or 5nm band)
Is required.

Accordingly, the present inventors have proposed that a resist film made of a conventionally known resist material is applied to F ₂
Pattern exposure was performed using laser light (wavelength: 157 nm band) to form a resist pattern.

However, a resist pattern having a rectangular cross-sectional shape could not be obtained, and only a resist pattern having a poor pattern shape could be obtained.

In view of the above, the present invention provides an exposure light of 1n
It is an object of the present invention to obtain a good pattern shape when forming a resist pattern using light having a wavelength in an m band to a 180 nm band.

[0012]

Means for Solving the Problems The present inventors have found that a resist material conventionally known, specifically, a resist material containing a polyhydroxystyrene derivative or a polyacrylic acid derivative as a main component is used. As a result of considering the cause of the poor pattern shape of the resist pattern, it was found that the carbonyl group contained in the polyhydroxystyrene derivative or the polyacrylic acid derivative was 1 nm band to 180 nm.
Exposure light having a wavelength in the range of 1 nm to 180 nm cannot sufficiently reach the bottom of the resist film due to high absorption of light having a wavelength in the nm band. I found out.

Formula 3 shows an example of the structural formula of a polyhydroxystyrene derivative used as a positive resist material for a KrF excimer laser.
1 shows an example of a structural formula of a polyacrylic acid derivative used as a positive resist material for an ArF excimer laser.

[0014]

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[0015]

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Further, the present inventors have proposed that the resist film 1n
As a result of various studies on measures for reducing absorptivity to light having a wavelength of the m band to 180 nm band, when a sulfonyl group (—SO ₂ —) is included in the resist material, the resist film has a thickness of 1 nm band to 180 nm band. It has been found that absorptivity to light having a wavelength in the 180 nm band is low.

This is because the sulfonyl group has a lower absorption for light having a wavelength of 1 nm to 180 nm than the carbonyl group contained in the polyhydroxystyrene derivative or the polyacrylic acid derivative. It is due to.

FIG. 1 shows the light wavelength and light transmittance when a resin film made of poly (vinylsulfonyl fluoride) and having a thickness of 0.1 μm is irradiated with light having a wavelength of 300 nm or less. Shows the relationship. FIG.
As can be seen from the above, it was confirmed that the resin film made of poly (vinylsulfonyl fluoride) had a transmittance of about 60% for light having a wavelength in the 157 nm band.

The present invention has been made based on the above findings. Specifically, the first pattern forming method according to the present invention is directed to a resist material having a base resin having a sulfonyl group in a main chain. Forming a resist film by applying a resist on a substrate;
The method includes a step of performing pattern exposure by irradiating light having a band wavelength, and a step of forming a resist pattern by developing the pattern-exposed resist film with a developer.

According to the first pattern forming method, since the base resin of the resist material has a sulfonyl group in the main chain, the absorptivity of the resist film to light having a wavelength in the 1 nm to 180 nm band is reduced. Obi ~ 180n
The transmittance of the exposure light having the wavelength in the m band to the resist film is increased. Therefore, the exposure light in the 1 nm to 180 nm band can sufficiently reach the bottom of the resist film, so that a resist pattern having a good pattern shape can be formed.

In the first pattern forming method, the base resin is preferably a resin represented by any one of the following general formulas (1) to (5).

[0022]

Embedded image (However, R is a hydrogen atom, a hydroxyl group, an alkyl group, a carboxyl group, a carboxylic acid ester, an acetal, a group having a cyclic aliphatic group, a group having an aromatic ring, or a group having a hetero ring, and R ₁ and R ₂ Are the same or different and are a hydrogen atom or an alkyl group.)

In this case, the resistance to dry etching can be improved because the base resin contains an aromatic ring or a cycloaliphatic.

It is preferable that the first pattern forming method further includes a step of performing a heat treatment on the resist film between the step of performing pattern exposure and the step of forming a resist pattern.

In this case, the catalytic reaction of the sulfonic acid generated from the base resin decomposed by the exposure light accelerates the decomposition of the base resin in the exposed portion of the resist film.

In this case, the base resin is a resin whose solubility in a developer changes in the presence of an acid, and the resist material further has an acid generator that generates an acid when irradiated with light. Is preferred.

In this case, the sulfonic acid generated from the base resin decomposed by the exposure light and the acid generated from the acid generator are heated, so that the catalytic reaction of the acid is promoted. , The decomposition of the base resin is further promoted.

The second pattern forming method according to the present invention comprises:
Forming a resist film by applying a resist material comprising an alkali-soluble base resin and a resin having a sulfonyl group in the main chain and having a dissolution inhibitor that decomposes when irradiated with light on a substrate, 1 nm band to 18
The method includes a step of performing pattern exposure by irradiating exposure light having a wavelength of 0 nm band, and a step of forming a resist pattern by developing the pattern-exposed resist film with a developer.

According to the second pattern forming method, since the resist material has a dissolution inhibitor composed of a resin having a sulfonyl group in the main chain, the resist film has a thickness of 1 nm to 180 nm.
Since the absorption of light in the nm band is reduced,
The transmittance of the exposure light of the 180 nm band to the resist film is increased. Therefore, the exposure light in the 1 nm to 180 nm band can sufficiently reach the bottom of the resist film, so that a resist pattern having a good pattern shape can be formed.

In the second pattern forming method, the base resin is preferably an acrylic resin, a styrene resin, a novolak resin or a polyolefin resin.

This makes it possible to make the resist film hardly soluble in alkali by the action of the dissolution inhibitor.

In the second pattern forming method, the dissolution inhibitor is preferably a resin represented by any one of the following general formulas (1) to (5).

[0033]

Embedded image (However, R is a hydrogen atom, a hydroxyl group, an alkyl group, a carboxyl group, a carboxylic acid ester, an acetal, a group having a cyclic aliphatic group, a group having an aromatic ring, or a group having a hetero ring, and R ₁ and R ₂ Are the same or different and are a hydrogen atom or an alkyl group.)

In this case, since the dissolution inhibitor contains an aromatic ring or a cycloaliphatic, resistance to dry etching can be improved.

The second pattern forming method preferably further comprises a step of performing a heat treatment on the resist film between the step of performing pattern exposure and the step of forming a resist pattern.

In this manner, the catalytic reaction of sulfonic acid generated from the dissolution inhibitor decomposed by the exposure light accelerates the decomposition of the dissolution inhibitor in the exposed portion of the resist film.

When the second pattern formation method includes a heat treatment step, the dissolution inhibitor is a resin that decomposes in the presence of an acid, and the resist material generates an acid when irradiated with light. It is preferable to further have an acid generator.

In this case, since the sulfonic acid generated from the dissolution inhibitor decomposed by the exposure light and the acid generated from the acid generator are heated, the catalytic reaction of the acid is promoted, so that the exposure of the resist film is prevented. The decomposition of the dissolution inhibitor in the part is further promoted.

In the first or second pattern formation method, the exposure light is preferably F ₂ laser light or Ar ₂ laser light.

[0040]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) Hereinafter, a pattern forming method according to a first embodiment of the present invention will be described with reference to FIGS.

In the pattern forming method according to the first embodiment, the resin represented by the general formula (2) is used as the base resin of the resist material. The specific composition of the resist material is as follows.

Base resin: polynovolak sulfone 2 g solvent: diglyme 20 g

Embedded image

First, as shown in FIG. 2A, a resist material having the above-described composition is spin-coated on a semiconductor substrate 10 to form a resist film 11 having a thickness of 0.3 μm. At this time, since the base resin is hardly soluble in alkali, the resist film 11 is hardly soluble in alkali.

Next, as shown in FIG. 2B, the resist film 11 is irradiated with an F ₂ excimer laser (wavelength: 157 nm band) 13 via a mask 12 to perform pattern exposure. In this way, the base resin in the exposed portion 11a of the resist film 11 is decomposed by the exposure light to generate sulfonic acid, so that the exposed portion 11a of the resist film 11 changes to alkali-soluble while the resist film 1
The unexposed portion 11b remains insoluble in alkali.

Next, the resist film 11 is developed using an alkaline developing solution such as an aqueous solution of tetramethylammonium hydroxide. As a result, the exposed portions 11a of the resist film 11 are dissolved in the developing solution, so that a resist pattern 14 including the unexposed portions 11b of the resist film 11 is obtained as shown in FIG. That is, the first embodiment is a case where a positive resist pattern is formed.

According to the first embodiment, since the resist material has a base resin having a sulfonyl group in the main chain, the absorptivity of the resist film 11 with respect to light having a wavelength of 1 nm to 180 nm decreases. 1 nm band to 18
The transmittance of the exposure light having a wavelength in the 0 nm band to the resist film 11 increases. For this reason, the exposure light is applied to the resist film 11.
, The resist pattern 14 having a fine pattern width of 0.08 μm and a good pattern shape could be formed.

FIG. 3 shows the results of an experiment performed to evaluate the first embodiment, and shows the light when the resin film having a thickness of 0.1 μm is irradiated with light having a wavelength of 300 nm or less. Shows the relationship between the wavelength and the light transmittance. In FIG. 3, the first embodiment shows a resin film made of polynovolak sulfone, the first comparative example shows a resin film made of a polyhydroxystyrene derivative,
The second comparative example shows a resin film made of a polyacrylic acid derivative. As can be seen from FIG. 3, according to the first embodiment, the transmittance for an F ₂ laser having a wavelength in the 157 nm band is significantly improved as compared with the first and second comparative examples.

Further, according to the first embodiment, since the base resin contains an aromatic ring, the resistance to dry etching can be improved.

In the first embodiment, after the resist film 11 is subjected to pattern exposure, the resist film 11 is developed without performing a heating process. The resist film 11 on which the pattern exposure has been performed may be subjected to a development process after being heated by a hot plate or the like. In this case, since the sulfonic acid generated from the base resin decomposed by the exposure light is heated, a catalytic reaction of the acid occurs, so that the decomposition of the base resin in the exposed portion 11a of the resist film 11 is promoted. For this reason, the sensitivity of the resist film 11 is improved.

(Second Embodiment) Hereinafter, a pattern forming method according to a second embodiment of the present invention will be described with reference to FIG.
This will be described with reference to FIGS.

In the pattern forming method according to the second embodiment, the resin represented by the general formula (1) is used as the base resin of the resist material. The specific composition of the resist material is as follows.

Base resin: resin shown in Chemical Formula 2 g Acid generator: triphenylsulfonium triflate 0.04 g Solvent: diglyme 20 g

Embedded image

First, as shown in FIG. 4A, a resist material having the above-described composition is spin-coated on a semiconductor substrate 20 to form a resist film 21 having a thickness of 0.3 μm. At this time, since the base resin is hardly soluble in alkali, the resist film 21 is hardly soluble in alkali.

Next, as shown in FIG. 4B, the resist film 21 is irradiated with an F ₂ excimer laser (wavelength: 157 nm band) 23 via a mask 22 to perform pattern exposure. In this case, the base resin in the exposed portion 21a of the resist film 21 is decomposed by the exposure light to generate sulfonic acid, so that the exposed portion 21a of the resist film 21 changes to be alkali-soluble while the resist film 2
The first unexposed portion 21b remains hardly soluble in alkali. In the exposed portion 21 a of the resist film 21, acid is generated from the acid generator, while the unexposed portion 21
In b, no acid is generated.

Next, as shown in FIG. 4C, the semiconductor substrate 20 and thus the resist film 21 are heated on a hot plate 24. In this case, since the sulfonic acid generated from the base resin decomposed by the exposure light and the acid generated from the acid generator are heated, a catalytic reaction of the acid occurs, so that the base in the exposed portion 21 a of the resist film 21 is heated. The decomposition of the resin is further promoted. Therefore, the resist film 21
Sensitivity is further improved.

Next, the resist film 21 is developed using an alkaline developing solution such as an aqueous solution of tetramethylammonium hydroxide. As a result, the exposed portions 21a of the resist film 21 dissolve in the developing solution, and as shown in FIG. 4D, a resist pattern 25 including the unexposed portions 21b of the resist film 21 is obtained. That is, the second embodiment is a case where a positive resist pattern is formed.

According to the second embodiment, since the resist material has the base resin having a sulfonyl group in the main chain, the absorbability of the resist film 21 with respect to light having a wavelength of 1 nm to 180 nm is reduced. 1 nm band to 18
The transmittance of the exposure light having a wavelength in the 0 nm band to the resist film 21 increases. Therefore, the exposure light is
, The resist pattern 25 having a fine pattern width of 0.08 μm and a good pattern shape could be formed.

Further, according to the second embodiment, since the base resin contains an aromatic ring, the resistance to dry etching can be improved.

(Third Embodiment) A pattern forming method according to a third embodiment of the present invention will now be described with reference to FIG.
This will be described with reference to FIGS.

The pattern forming method according to the third embodiment uses an alkali-soluble base resin as a base resin of a resist material, and uses a resin represented by the general formula (2) as a dissolution inhibitor. is there. The specific composition of the resist material is as follows.

Base resin: novolak resin 1.5 g Dissolution inhibitor: compound shown in [Chemical formula 9] 1 g Solvent: diglyme 20 g

Embedded image

First, as shown in FIG. 2A, a resist material having the above composition is spin-coated on a semiconductor substrate 10 to form a resist film 11 having a thickness of 0.3 μm. At this time, the base resin is soluble in alkali, but the resist film 11 is hardly soluble in alkali due to the action of the dissolution inhibitor.

Next, as shown in FIG. 2B, the resist film 11 is irradiated with an F ₂ excimer laser (wavelength: 157 nm band) 13 via a mask 12 to perform pattern exposure. In this case, the dissolution inhibitor in the exposed portion 11a of the resist film 11 is decomposed by the exposure light to generate sulfonic acid, so that the exposed portion 11a of the resist film 11 changes to alkali-soluble while the resist film 1
The unexposed portion 11b remains insoluble in alkali.

Next, the resist film 11 is developed using an alkaline developing solution such as an aqueous solution of tetramethylammonium hydroxide. As a result, the exposed portions 11a of the resist film 11 are dissolved in the developing solution, so that a resist pattern 14 including the unexposed portions 11b of the resist film 11 is obtained as shown in FIG. That is, the third embodiment is a case where a positive resist pattern is formed.

According to the third embodiment, since the resist material has a dissolution inhibitor composed of a resin having a sulfonyl group in the main chain, the resist film 11 has a thickness of 1 nm to 180 nm.
Since the absorption of light having a wavelength in the m-band becomes low,
The transmittance of exposure light having a wavelength in the nm band to 180 nm band with respect to the resist film 11 is increased. Therefore, the exposure light can sufficiently reach the bottom of the resist film 11, so that the
The resist pattern 14 having a fine pattern width of 8 μm and a good pattern shape was able to be formed.

According to the third embodiment, since the dissolution inhibitor contains an aromatic ring, the resistance to dry etching can be improved.

In the third embodiment, the resist film 11 is developed without being subjected to a heat treatment. However, instead of this, the resist film 11 that has been subjected to pattern exposure is The development processing may be performed after heating with a hot plate or the like. This way,
Since the sulfonic acid generated from the dissolution inhibitor decomposed by the exposure light is heated, a catalytic reaction of the acid occurs, so that the decomposition of the dissolution inhibitor in the exposed portion 11a of the resist film 11 is promoted. For this reason, the sensitivity of the resist film 11 is improved.

(Fourth Embodiment) Hereinafter, a pattern forming method according to a fourth embodiment of the present invention will be described with reference to FIG.
This will be described with reference to FIGS.

The pattern forming method according to the fourth embodiment uses an alkali-soluble base resin as a base resin of a resist material and uses a resin represented by the above general formula (1) as a dissolution inhibitor. is there. The specific composition of the resist material is as follows.

Base resin: 1.5 g of polyhydroxystyrene Dissolution inhibitor: 1 g of the resin shown in Chemical formula 1 Acid generator: 0.04 g of triphenylsulfonium triflate Solvent: 20 g of diglyme

Embedded image

First, as shown in FIG. 4A, a resist material having the above composition is spin-coated on a semiconductor substrate 20 to form a resist film 21 having a thickness of 0.3 μm. At this time, the base resin is soluble in alkali, but the resist film 21 is hardly soluble in alkali due to the action of the dissolution inhibitor.

Next, as shown in FIG. 4B, the resist film 21 is irradiated with an F ₂ excimer laser (wavelength: 157 nm band) 23 via a mask 22 to perform pattern exposure. In this case, the dissolution inhibitor in the exposed portion 21a of the resist film 21 is decomposed by the exposure light to generate sulfonic acid, so that the exposed portion 21a of the resist film 21 changes to alkali-soluble while the resist film 2
The first unexposed portion 21b remains hardly soluble in alkali. In the exposed portion 21 a of the resist film 21, acid is generated from the acid generator, while the unexposed portion 21
In b, no acid is generated.

Next, as shown in FIG. 4C, the semiconductor substrate 20 and thus the resist film 21 are heated on a hot plate 24. In this case, the sulfonic acid generated from the dissolution inhibitor decomposed by the exposure light and the acid generated from the acid generator are heated, and a catalytic reaction of the acid occurs. Dissolution inhibition
The decomposition of the agent is further promoted. Therefore, the resist film 21
Sensitivity is further improved.

Next, the resist film 21 is developed using an alkaline developing solution such as an aqueous solution of tetramethylammonium hydroxide. As a result, the exposed portions 21a of the resist film 21 dissolve in the developing solution, and as shown in FIG. 4D, a resist pattern 25 including the unexposed portions 21b of the resist film 21 is obtained. That is, the fourth embodiment is a case where a positive resist pattern is formed.

According to the fourth embodiment, since the resist material has a dissolution inhibitor composed of a resin having a sulfonyl group in the main chain, the resist film 21 has a thickness of 1 nm to 180 nm.
Since the absorption of light having a wavelength in the m-band becomes low,
The transmittance of the exposure light having a wavelength in the nm band to the 180 nm band with respect to the resist film 21 is increased. For this reason, since the exposure light can sufficiently reach the bottom of the resist film 21,
The resist pattern 25 having a fine pattern width of 8 μm and a good pattern shape was able to be formed.

Further, according to the fourth embodiment, since the dissolution inhibitor contains an aromatic ring, the resistance to dry etching can be improved.

In the first and second embodiments, any one of the resins represented by the general formulas (1) to (5) can be used as the base resin, but is not limited thereto. Not something.

In the third and fourth embodiments,
As the dissolution inhibitor, any one of the resins represented by the general formulas (1) to (5) can be used, but is not limited thereto.

In the third and fourth embodiments,
As the alkali-soluble base resin, an acrylic resin, a styrene resin, a novolak resin or a polyolefin resin can be used, but is not limited thereto.

In the second and fourth embodiments,
As the acid generator, an onium salt such as a sulfonium salt or an iodonium salt, a sulfonate, a diazodisulfonylmethane, or a ketosulfone compound can be appropriately used.

In the first to fourth embodiments, Xe ₂ laser light (wavelength: 172 nm) is used as the exposure light.
Band), F ₂ laser light (wavelength: 157 nm band), Kr ₂ laser light (wavelength: 146 nm band), ArKr laser light (wavelength: 134 nm band), Ar ₂ laser light (wavelength: 126 n)
m band) or soft X-rays (wavelength: 13 nm band, 11 nm band, or 5 nm band), but is not limited thereto.

In the first to fourth embodiments, the exposed portion of the resist film is removed with an alkaline developer to form a positive resist pattern. The part may be removed by a developer comprising an organic solvent to form a negative resist pattern.

[0083]

According to the first or second pattern forming method, since the exposure light can sufficiently reach the bottom of the resist film, a resist pattern having a good pattern shape can be formed.

[Brief description of the drawings]

FIG. 1 is a diagram showing the results of an experiment performed to evaluate the present invention.

FIGS. 2A to 2C are cross-sectional views illustrating respective steps of a pattern forming method according to first and third embodiments of the present invention.

FIG. 3 is a diagram showing the results of an experiment performed to evaluate the pattern forming method according to the first embodiment of the present invention.

FIGS. 4A to 4D are cross-sectional views showing steps of a pattern forming method according to second and fourth embodiments of the present invention.

[Explanation of symbols]

10 semiconductor substrate 11 resist film 11a exposed portion 11b unexposed part 12 mask 13 F ₂ excimer laser 14 resist pattern 20 semiconductor substrate 21 resist film 21a exposed portion 21b unexposed part 22 mask 23 F ₂ excimer laser 24 hot plate 25 resist pattern

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-5-331289 (JP, A) JP-A-6-83056 (JP, A) JP-A-7-181691 (JP, A) JP-A-7-816 181679 (JP, A) JP-A-4-251850 (JP, A) JP-A-2-59751 (JP, A) JP-A-60-195542 (JP, A) JP-A-61-37824 (JP, A) JP-A-58-52638 (JP, A) JP-A-63-129340 (JP, A) JP-A-61-3140 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) G03F 7/00-7/42

Claims (6)

(57) [Claims] 1. A step of applying a resist material having a base resin having a sulfonyl group in a main chain on a substrate to form a resist film; and forming a Xe laser beam, an F ₂ laser beam, a Kr ₂ beam on the resist film.
Laser light, ArKr laser light or Ar ₂ laser light.
Performing a pattern exposure by irradiating the resist film with an exposure light, and a step of developing the pattern-exposed resist film with a developer to form a resist pattern, wherein the base resin is formed in the presence of an acid. A pattern forming method, characterized in that the resin is a resin whose solubility in the developer changes, and the resist material further includes an acid generator that generates an acid when irradiated with light. 2. The base resin has the following general formula (1):
The pattern forming method according to claim 1, wherein the resin is any one of the resins described in (5). Embedded image (Where R is a hydrogen atom, a hydroxyl group, an alkyl group, a carboxyl group, a carboxylic acid ester, an acetal, a group having a cyclic aliphatic group, a group having an aromatic ring, or a group having a hetero ring, and R ₁ and R ₂ Are the same or different and are a hydrogen atom or an alkyl group.) 3. The method according to claim 1, further comprising a step of performing a heat treatment on the resist film between the step of performing the pattern exposure and the step of forming the resist pattern. Pattern formation method. 4. A step of applying a resist material having an alkali-soluble base resin and a dissolution inhibitor comprising a resin having a sulfonyl group in a main chain on a substrate to form a resist film; Xe laser light, F ₂ laser light, Kr ₂
Laser light, ArKr laser light or Ar ₂ laser light.
Performing a pattern exposure by irradiating an exposure light, and a step of developing the resist film subjected to the pattern exposure with a developer to form a resist pattern, wherein the dissolution inhibitor is in the presence of an acid. The resist material further includes an acid generator that generates an acid when irradiated with light. 5. The base resin is an acrylic resin or
5. A polyolefin-based resin.
4. The pattern forming method according to 1. 6. The dissolution inhibitor according to the following general formula (1):
5. The pattern forming method according to claim 4, wherein the resin is any one of the resins described in (5). Embedded image (Where R is a hydrogen atom, a hydroxyl group, an alkyl group, a carboxyl group, a carboxylic acid ester, an acetal, a group having a cyclic aliphatic group, a group having an aromatic ring, or a group having a hetero ring, and R ₁ and R ₂ Are the same or different and are a hydrogen atom or an alkyl group.)