JP3293221B2 - Surface emitting semiconductor laser and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface-emitting type semiconductor laser which oscillates a laser beam in a direction perpendicular to a substrate and a method of manufacturing the same.

[0002]

2. Description of the Related Art The applicant of the present invention has proposed in Japanese Patent Application No. 2-242000 a surface-emitting type semiconductor laser in which an optical resonator is embedded with a II-VI compound semiconductor.

In this surface emitting semiconductor laser, first, as shown in FIG. 13, a (702) n-type GaAs substrate is
(703) n-type GaAs buffer layer, (704) distributed-reflection multilayer mirror, (705) n-type Al _0.4 Ga _0.6 As clad layer, (706) p-type GaAs active layer, (707) p-type Al _0.4 G
a _0.6 As clad layer and (708) p-type Al _0.1 Ga
_{A 0.9} As contact layer is grown sequentially, and then (707)
The p-type Al _0.4 Ga _0.6 As cladding layer and the (708) p-type Al _0.1 Ga _0.9 As contact layer are vertically etched except for the columnar region, and (709) ZnS _0.06 Se is formed around the columnar region. _0.94 is formed and buried, and thereafter, (711) a dielectric multilayer mirror is deposited on the upper surface of the (708) p-type Al _0.1 Ga _0.9 As contact layer in a region slightly smaller than the cylindrical diameter, and finally (710) ) A p-type ohmic electrode and (701) an n-type ohmic electrode are formed. (709) ZnS used for the buried layer _0.06
Since the Se _0.94 layer has a high resistance and a low refractive index, current and light are efficiently confined, and a high-performance surface emitting semiconductor laser is obtained.

[0004]

In this prior art, as shown in FIG. 13, a p-type ohmic electrode for injecting current into the active layer is formed in a ring shape on the optical resonator. It has been found that the following two problems occur due to the presence of the ring-shaped (710) p-type ohmic electrode.

First, the reflectance of the (710) p-type ohmic electrode is smaller than the reflectance of the (711) dielectric multilayer mirror on the side from which light is emitted. Accordingly, a situation occurs in which the efficiency of multiple reflection of light is reduced inside the optical resonator below the (710) p-type ohmic electrode. In order to solve such a situation, it is necessary to reduce the area of a portion where the (708) p-type Al _0.1 Ga _0.9 As contact layer and the (710) p-type ohmic electrode are in contact. However, when the contact area of this portion is reduced, the (710) p-type ohmic electrode and (708) p-type Al _0.1 G
The contact resistance with the a _0.9 As contact layer becomes extremely high, and the heat generated by the resistance in this portion becomes extremely large. As a result, the supplied power is consumed in this portion, and the efficiency in the optical resonator decreases,
A new problem has arisen, such as that the input current-optical output characteristics cannot be further improved. Further, such generation of heat is not preferable in terms of reliability.

Next, due to the presence of the ring-shaped (710) p-type electrode, there is also a problem that the efficiency is reduced due to generation of a plurality of standing waves as shown in FIG.

In general, a surface emitting semiconductor laser has a small optical resonator length, and can only produce a standing wave of one wavelength. Therefore, the wavelength of the standing wave in the optical resonator needs to be uniform in order for the entire volume of the element to function effectively as a laser resonator.

[0008] However, as shown in FIG.
The boundary condition of light is different between the interface between the dielectric and the (14) semiconductor and between the interface between the (12) metal and the (14) semiconductor. This is due to the difference in the phase shift of the reflected light at the boundary surface. When light traveling through a semiconductor is reflected at a dielectric interface having a small refractive index, the phase of the reflected wave at the interface becomes the same as the phase of the incident wave.
The antinode of the standing wave will be formed at the boundary surface. On the other hand, when reflected at a metal interface, the phase of the reflected wave changes (0 to π).
), So that the light appears to be reflected inside the metal in a pseudo manner (virtual reflection surface). As a result, the antinode of the standing wave cannot be formed at the boundary.

For this reason, in a structure using a ring-shaped (710) p-type ohmic electrode as in the surface-emitting type semiconductor laser shown in FIG.
The standing wavelengths generated below the dielectric multilayer mirror have different resonance wavelengths because the states are different. Therefore, the portion under the ring-shaped (710) p-type ohmic electrode in the volume of the resonator does not serve as a laser resonator as shown in FIG. This generates a large reactive current and also acts as a heat source, causing an increase in threshold current, a decrease in efficiency in the optical resonator, and a deterioration in temperature characteristics.

An object of the present invention is to solve such a problem, and an object of the present invention is to provide a highly efficient and highly reliable surface emitting semiconductor laser and a method of manufacturing the same by a simple process. Things.

[0011]

In order to solve the above problems, a first aspect of the present invention is a surface emitting type semiconductor laser which emits light in a direction perpendicular to a substrate. An optical resonator in which at least one of the semiconductor layers is formed in one or more columns, and embedded around the columnar semiconductor layer. includes a layer, a light emission side reflecting mirror of said reflecting mirror, laminated a first layer of semiconductor, and a second layer of a different semiconductor having a refractive index as the first layer alternately Forming a metal electrode provided with a light emission port on the second layer; and forming a third layer made of a dielectric on the light emission port, and a dielectric having a different refractive index from the third layer. the fourth composite multilayer reflection mirror der constituted a layer are laminated alternately made is, Wherein the serial first layer and the second layer and the exchange
The reflection mirrors stacked on each other are arranged in a direction perpendicular to the substrate.
It has the same size as the columnar semiconductor layer,
One, the light emitting port is viewed from a direction perpendicular to the substrate,
The semiconductor device is smaller than the columnar semiconductor layer .

According to a fourth aspect of the present invention, there is provided a method of manufacturing a surface-emitting type semiconductor laser for emitting light in a direction perpendicular to a substrate, wherein a pair of optical resonators constituting an optical resonator are formed on a substrate made of a semiconductor or a dielectric. Forming a reflecting mirror and at least one semiconductor layer between them by metal organic chemical vapor deposition or molecular beam epitaxy, forming a photoresist mask on the semiconductor layer, and forming at least one of the semiconductor layers Etching one layer using the photoresist mask to form one or more columns, and burying the periphery of the columnar semiconductor layer
Forming a layer , wherein the light-emitting-side reflection mirror of the reflection mirror is formed from a first layer made of a semiconductor and a semiconductor having a different refractive index from the first layer continuously from the substrate. Forming a metal electrode provided with a light emission port on the second layer, and a third layer made of a dielectric material on the light emission port; A third layer and a fourth layer made of a dielectric material having a different refractive index are alternately stacked, and the first layer and the second layer are alternately stacked.
The projection mirror has a columnar shape when viewed from a direction perpendicular to the substrate.
Formed to have the same size as the semiconductor layer of
The light exit port is viewed from a direction perpendicular to the substrate.
The semiconductor device is characterized in that it is formed smaller than the columnar semiconductor layer .

In this case, the semiconductor epitaxial layer is formed by metal organic chemical vapor deposition using an adduct composed of a group II organic compound and a group VI organic compound and a group VI hydrogen compound as raw materials. Preferably, it is formed.

According to an eighth aspect of the present invention, there is provided a surface emitting type semiconductor laser which emits light in a direction perpendicular to a substrate, the semiconductor laser comprising a pair of reflecting mirrors and a plurality of semiconductor layers therebetween. An optical resonator in which at least one of the layers is formed in one or more columns, a semiconductor epitaxial layer embedded around the columnar semiconductor layer, and a light emission formed on the semiconductor layer A metal electrode having a port, and at least a phase shift layer provided in the light exit port, wherein the material of the phase shift layer has a small absorption coefficient with respect to an oscillation frequency and is in contact with a boundary with the phase shift layer. It is characterized by being a material having a refractive index substantially equal to that of the layer.

According to a tenth aspect of the present invention, there is provided a surface-emitting type semiconductor laser which emits light in a direction perpendicular to a substrate, the semiconductor laser comprising a pair of reflecting mirrors and a plurality of semiconductor layers therebetween. An optical resonator in which at least one of the layers is formed in one or more columns, a semiconductor epitaxial layer embedded around the columnar semiconductor layer, and a light emission formed on the semiconductor layer A metal electrode having a port, and at least a phase shift layer provided in the light exit port, wherein the film thickness of the phase shift layer determines the wavelength of a standing wave generated under the light exit port by the metal. The thickness is set to be substantially equal to the wavelength of the standing wave generated under the electrode.

In this case, it is preferable that the material of the phase shift layer is a dielectric material capable of continuously forming a light emitting side reflection mirror made of a dielectric material on the phase shift layer.

Further, the material of the phase shift layer may be the same as the material of the semiconductor layer that can be formed by continuously regrowing the semiconductor layer.

Further, the material of the phase shift layer may be an organic material which can be applied and formed at least in the light emission port on the surface of the optical resonator.

[0019]

According to the surface emitting type semiconductor laser of the first aspect of the present invention, the reflecting mirror on the light emitting side is made of a semiconductor multilayer film and a metal electrode having the same size as the optical resonator diameter, and a dielectric covering the light emitting opening. By using a multilayer mirror, the reflectance of the optical resonator under the electrode can be increased because the semiconductor multilayer mirror exists below the electrode, and the efficiency in the optical resonator does not decrease. A highly efficient surface-emitting type semiconductor laser can be provided.

In the manufacturing method according to the fourth aspect of the present invention, among the reflection mirrors on the light emission side, the semiconductor multilayer mirror is a crystal continuous with the active layer constituting the optical resonator from the substrate. Since it can be grown, the manufacturing method is extremely simple, and it is possible to implement the above-described surface-emitting type semiconductor laser very stably and with good reproducibility.

Further, according to the surface emitting semiconductor laser according to the eighth and tenth aspects of the present invention, the phase shift layer is provided in the light emission port of the metal electrode, whereby the light emission between the metal electrode and the metal electrode can be prevented. The wavelength of the standing wave generated under the mouth can be made substantially equal. Therefore, a standing wave generated in the optical resonator can be made uniform, and all the regions in the optical resonator can function as an effective laser resonator, so that a highly efficient surface emitting semiconductor laser is provided. can do.

[0022]

Embodiments of the present invention will be described below with reference to the drawings. (1) Embodiments 1 to 3 Embodiments 1 to 3 are embodiments in which the reflection mirror on the light emission side is configured by a semiconductor multilayer film, a metal electrode, and a dielectric multilayer film mirror covering the light emission port. . In these embodiments, since the distributed reflection type multilayer mirror is arranged below the p-type ohmic electrode, it is possible to increase the reflectivity of the optical resonator below the electrode, and to obtain a highly efficient surface-emitting type semiconductor. A laser can be provided. (A) Embodiment 1 FIG. 1 is a perspective view showing a cross section of a light emitting portion of a (100) semiconductor laser according to a first embodiment of the present invention.
7A to 7F are cross-sectional views illustrating a manufacturing process of the semiconductor laser according to the embodiment.

The structure and manufacturing process of the (100) semiconductor laser according to this embodiment will be described below with reference to FIGS.
It will be described according to.

First, (1) is placed on an (102) n-type GaAs substrate.
03) An n-type GaAs buffer layer is formed,
30 pairs of (104) distributed reflection type multi-layer mirrors, each comprising l _0.7 Ga _0.3 As layer and n-type Al _0.1 Ga _0.9 As layer, having a reflectance of 98% or more with respect to light near a wavelength of 870 nm are formed.

Subsequently, (105) n-type Al _0.4 Ga _0.6 As
Cladding layer, (106) p-type GaAs active layer, (107) p-type A
l _0.4 Ga _0.6 As cladding layer and p-type Al _0.7
Five pairs of (114) distributed reflection type multilayer mirrors comprising a Ga _0.3 As layer and a p-type Al _0.1 Ga _0.9 As layer and having a reflectance of 75% or more with respect to light near a wavelength of 870 nm, and a (108) p-type Al _0.1 A Ga _0.9 As contact layer is sequentially formed on the MOCV
The epitaxial growth is performed by the method D (FIG. 2A). At this time, in this example, the growth temperature was set to 700 ° C., the growth pressure was set to 150 Torr, and the group III raw material was TMG.
a (trimethylgallium) and TMAI (trimethylaluminum) as organometallics.
₃ , H ₂ Se is used as the n-type dopant, and DEZn (diethyl zinc) is used as the p-type dopant.

After the above-mentioned epitaxial growth, a (112) SiO ₂ layer is formed on the surface by a thermal CVD method.
Reactive ion beam etching (hereinafter "RIBE")
Etching is performed halfway through the (107) p-type Al _0.4 Ga _0.6 As cladding layer, leaving a columnar light emitting portion covered with the (113) resist (FIG. 2).
((B)). At this time, in this embodiment, a mixed gas of chlorine and argon is used as the etching gas, the gas pressure is 1 × 10 ⁻³ Torr, and the extraction voltage is 400 V
And Here, the reason for etching only the middle of the (107) p-type Al _0.4 Ga _0.6 As cladding layer is that the structure for confining the injected carriers and light in the horizontal direction of the active layer is a rib waveguide type refractive index waveguide. This is because of the structure.

Next, the (107) p-type Al _0.4 Ga _0.6
A buried layer is formed on the As clad layer. For this purpose, in this embodiment, first, the (113) resist is removed,
Next, the MBE method area is set to (109) Z by MOCVD method or the like.
The nS _0.06 Se _0.94 layer is buried and grown (FIG. 2)
(C)).

For example, an MOCVD method using an adduct of DMZn-DMSe (an adduct of dimethylzinc and dimethylselenium) and H ₂ Se (hydrogen selenide) as raw materials has a growth temperature of 2 ° C.
Buried growth was performed at 75 ° C. and a growth pressure of 70 Torr.

Further, the (112) SiO ₂ layer is removed, and subsequently, a region slightly smaller than the diameter of the light emitting portion is formed on the surface of the (108) contact layer with the (113) resist (FIG. 2).
(D)).

Thereafter, a (110) p-type ohmic electrode is vapor-deposited on the surface, and an emission port is opened on the surface of the light emitting portion by using a lift-off method (FIG. 2E).

Thereafter, two pairs of (111) SiO ₂ are coated so as to cover the light emitting portion without the (110) p-type ohmic electrode.
An / a-Si dielectric multilayer mirror is formed by electron beam evaporation, and a (101) n-type ohmic electrode is further deposited on the (102) n-type GaAs substrate side (FIG. 2 (f)). Finally, alloying at 400 ° C. is performed in an N ₂ atmosphere.

The (100) surface-emitting type semiconductor laser of this embodiment fabricated in this way is the ZnS _0.06 Se used for embedding.
_{Since the 0.94} layer has a resistance of IGΩ or more and the leakage of the injection current into the (109) buried layer does not occur, extremely effective current confinement is achieved. Further, since the (109) buried layer does not need to have a multilayer structure, it can be easily grown and has high batch-to-batch reproducibility.

Further, since the surface emitting semiconductor laser has a rib waveguide structure, the difference in the refractive index between the active layer below the ZnS _0.06 Se _0.94 layer and the active layer in the resonator section becomes large, and effective light confinement is simultaneously performed. Achieved.

Further, since the II-VI compound semiconductor as the buried layer is made of an adduct composed of a group II organic compound and a group VI organic compound and a group VI hydride as raw materials, it is much lower than the conventional one. It becomes possible to form the buried layer at a temperature. Therefore, it is possible to prevent the crystallinity of each layer forming the resonator from deteriorating due to heat generated when the buried layer is formed, and at the same time, it is possible to obtain a buried layer having excellent crystallinity and sufficient uniformity. II
MOCV by a general method using a group IV raw material and a group VI raw material
When the method D is performed, the temperature at which the buried layer is formed becomes extremely high (600 ° C. or higher). For this reason, the heat at this time causes transitions and defects in the layers forming the resonator, deteriorating the crystallinity, causing mutual diffusion at the interface between each of these layers and the buried layer, There were several problems, such as poor crystallinity of the layer itself, making it impossible to obtain sufficient uniformity. However, by using the adduct and the group VI hydride, the MO
The temperature in CVD is 500 ° C. or less, preferably 300 ° C.
° C or less, and these problems could be solved.

In this embodiment, as shown in FIG. 2F, the reflecting mirror on the light emitting side is composed of a semiconductor multilayer mirror under a (110) p-type ohmic electrode. The configuration is such that a multilayer mirror is arranged.
Therefore, the reflectivity of the optical resonator below the electrode can be increased, and a highly efficient surface-emitting semiconductor laser can be provided. Then, since the contact area between the (110) p-type ohmic electrode and the semiconductor layer can be increased, the resistance at this portion can be reduced. As a result, the generation of heat in this portion can be suppressed, and the efficiency and reliability of the semiconductor laser can be improved.

Further, in the manufacturing method according to the present embodiment, among the reflection mirrors on the light emission side, the (114) distributed reflection type multilayer mirror is continuous from the substrate together with the active layer and the like constituting the optical resonator. Crystal growth. Accordingly, a surface-emitting type semiconductor laser which is extremely simple to manufacture, can be provided very stably, and has high reproducibility can be provided, and reliability, yield, and the like can be improved.

In the present embodiment, the reflectivity of the reflection mirror on the light emitting section is determined by combining the (114) distributed reflection type multilayer mirror composed of a semiconductor multilayer mirror and the (111) dielectric multilayer mirror. It can be 96% or more at an oscillation wavelength of 870 nm.

Further, the reflection mirror on the exit side is made of a (114) distributed reflection type multilayer mirror made of a semiconductor multilayer mirror, and (1)
11) The reason why the dielectric multilayer mirror is used is that if all the semiconductor multilayer mirrors are used, it is necessary to form 40 or more semiconductor layers with good control in order to obtain a reflectance of 96% or more. This is because the electric resistance in the vertical direction of the semiconductor layer described above becomes extremely large, causing a problem of increasing the element resistance of the surface emitting semiconductor laser itself. (B) Embodiment 2 FIG. 3 shows a semiconductor laser (20) according to a second embodiment of the present invention.
0) is a perspective view showing a cross section of the light emitting portion, and FIG.
(A) to (f) show the semiconductor laser (20) in this embodiment.
0) is a cross-sectional view showing the manufacturing process.

In the semiconductor laser (200) of this embodiment, the light emitting portion is formed from the (208) p-type Al _0.1 Ga _0.9 As contact layer (2).
05) This is different from the first embodiment in that a part of the n-type Al _0.4 Ga _0.6 As cladding layer is formed in a columnar shape.

Hereinafter, the structure and manufacturing process of this embodiment will be described with reference to FIGS.

First, on the (202) n-type GaAs substrate, (2)
03) An n-type GaAs buffer layer is formed,
and an n-type Al _0.1 Ga _0.9 As layer.
30 that has a reflectance of 98% or more for light near 70 nm
Form a pair of (204) distributed semiconductor multilayer mirrors. Subsequently, a (205) n-type Al _0.4 Ga _0.6 As clad layer, (20
6) p-type GaAs active layer, (207) p-type Al _0.4 Ga _0.6
An As clad layer is grown, and a pair of (214) consisting of a p-type AlAs layer and a p-type Al _0.1 Ga _0.9 As layer having a reflectance of 75% or more with respect to light near a wavelength of 870 nm.
A distributed reflection type multilayer mirror is formed, and a (208) p-type Al _0.1 Ga _0.9 As contact layer is successively formed on the mirror by MOCV.
The epitaxial growth is performed by the method D (FIG. 4A). At this time, in this example, the growth temperature was set to 700 ° C., the growth pressure was set to 150 Torr, and the group III raw material was TMG.
a (trimethylgallium) and TMAI (trimethylaluminum) as organometallics.
₃ , H ₂ Se is used as the n-type dopant, and DEZn (diethyl zinc) is used as the p-type dopant.

In the formation of the (204) and (214) distributed reflection type multilayer mirrors, the supply amount of H ₂ Se in the (204) distributed reflection type multilayer mirror and (214) the distributed reflection type In the multi-layer mirror, the dopant concentration near the interface of the layers is increased by controlling the DEZn supply amount.

Next, the (205) n-type Al _0.4.
Etching is performed halfway through the Ga _0.6 As cladding layer (FIG. 4B). At this time, in this embodiment, a mixed gas of chlorine and argon is used as the etching gas, the gas pressure is 1 × 10 ⁻³ Torr, and the extraction voltage is 40.
0V.

Next, a buried layer is formed on the etched region. For this reason, in the present embodiment, first, (2
13) Remove resist and then use MBE or MOCV
The (209) ZnS _0.06 Se _0.94 layer is buried and grown by the D method or the like (FIG. 4C).

Further, the (212) SiO ₂ layer is removed, and subsequently, a region slightly smaller than the diameter of the light emitting portion is formed on the surface of the (208) contact layer with a resist (FIG. 4D).

Thereafter, a (210) p-type ohmic electrode is vapor-deposited on the surface, and an emission port is opened on the surface of the light emitting portion by using a lift-off method (FIG. 4E).

After that, two pairs of (211) SiO ₂ / a-Si dielectric multilayer mirrors are formed by electron beam evaporation so as to cover the exit. (202) n-type GaAs
A (201) n-type ohmic electrode is deposited on the substrate side (Fig. 4
(F)). Finally, in an N ₂ atmosphere, at 400 ° C.
Performing alloying.

By the above steps, as shown in FIG.
A (200) surface emitting semiconductor laser having a buried structure can be obtained.

In the thus fabricated (200) surface emitting semiconductor laser of this embodiment, the ZnS
_{Since the 0.06} Se _0.94 layer has a resistance of IGΩ or more and the leakage of the injection current into the (209) buried layer does not occur, extremely effective current confinement is achieved. Further, since the (209) buried layer does not need to have a multilayer structure, it can be easily grown, and the reproducibility between batches is high. Further, using a ZnS _0.06 Se _0.94 layer having a sufficiently smaller refractive index than GaAs,
(206) More effective light confinement is realized by the embedded type refractive index waveguide structure in which the active layer is embedded.

Further, since the carrier concentration near the interface between the layers constituting the distributed reflection type multilayer mirror (204) and (214) is increased, the barrier of the conduction band becomes thinner, and electrons are more likely to tunnel through. The band steepness of the valence band becomes gentle, and holes are easily conducted, so that the electric resistance in the direction perpendicular to the multilayer film is small.

Further, since the carrier concentration is increased only by the doping in the vicinity of the interface between the layers, the film quality is not deteriorated by the high concentration doping. (C) Third Embodiment FIG. 5 shows a semiconductor laser (30) according to a third embodiment of the present invention.
FIG. 6A is a perspective view showing a cross section of the light emitting unit of FIG.
(F) is a sectional view showing a manufacturing process of the semiconductor laser (300) in the example.

The semiconductor laser (300) according to the present embodiment is composed of (307)
This embodiment differs from the first and second embodiments in that the p-type Al _0.5 Ga _0.5 As clad layer has a light emitting portion formed by a plurality of columnar portions separated from each other by separation grooves.

Hereinafter, the structure and manufacturing process of this embodiment will be described with reference to FIGS.

First, (3) is placed on a (302) n-type GaAs substrate.
03) An n-type GaAs buffer layer is formed,
25 pairs of (304) semiconductor multilayer mirrors comprising a l _0.9 Ga _0.1 As layer and an n-type Al _0.2 Ga _0.8 As layer and having a reflectivity of 98% or more with respect to light of ± 30 nm centering on a wavelength of 780 nm are formed. . Subsequently, (305) n-type Al _0.5 Ga
_0.5 As cladding layer, (306) p-type Al _0.13 Ga _0.87 As
Active layer, (307) p-type Al _0.5 Ga _0.5 As clad layer,
The p-type Al _0.9 Ga _0.1 As layer and the p-type Al _0.2 G
a _0.8 As layer made of 7
Five pairs of (315) distributed reflection type multilayer mirrors having a reflectivity of 5% or more and (308) p-type Al _0.15 Ga _0.85 As contact layers are sequentially epitaxially grown by MOCVD (FIG. 6A). In the present embodiment, the growth conditions at this time are a growth temperature of 720 ° C., a growth pressure of 150 Torr, an organic metal such as TMGa (trimethylgallium) and TMAI (trimethylaluminum) as a group III source, and a group V source as a group V source. Is TM for AsH ₃ , n-type dopant
Si (tetramethylsilane), p-type dopant DEZ
n (diethyl zinc) is used.

Further, during the growth of the (304) semiconductor multilayer mirror, the growth surface is intermittently irradiated with ultraviolet light to form the n-type Al _0.9 Ga _0.1 As layer and the n-type Al _0.2 G forming the mirror.
a _Increase the carrier concentration near the interface of the _0.8 As layer to obtain (304)
The resistance of the semiconductor multilayer mirror is reduced.

Next, the surface was subjected to normal pressure thermal CVD (31
2) An SiO ₂ layer is formed, a photoresist is applied thereon, and a photolithography process is performed to produce a required pattern. At that time, the resist pattern is formed under pattern forming conditions such that the side surface is perpendicular to the substrate surface. After the formation, the temperature heating which causes drooping of the side surface is not performed.

Then, using this pattern as a mask,
Reactive ion etching (RIE) using CF ₄ gas as an etching gas is performed (312) to remove the SiO ₂ layer. As described above, while having the required pattern shape, the (313) resist and the (3)
12) A pattern with the SiO ₂ layer can be created (Fig. 6
(B)).

Subsequently, with this vertical side (313)
Using the resist as a mask, etching is performed using a RIBE method while leaving a columnar light-emitting portion. At this time, (307) p-type Al _0.5 Ga _0.5 is provided between the plurality of columnar portions forming the light emitting portion.
Etching is performed halfway through the As cladding layer (FIG. 6).
(C)). At this time, in this embodiment, a mixed gas of chlorine and argon is used as the etching gas, and the gas pressure is 5 × 10 ^−4.
Torr, a plasma extraction voltage of 400 V, an ion current density of 400 μA / cm ² on the etching sample, and a sample temperature of 20 ° C.

Here, the light emitting portion is made of (307) p-type Al _0.5 Ga
_{The reason} why etching is performed only halfway through the _0.5 As clad layer is that the injection of carriers and light confined in the horizontal direction of the active layer is made a refractive index waveguide type rib waveguide structure, and a part of the light in the active layer is activated. This is to enable transmission in the layer horizontal direction.

The resist has vertical side surfaces.
(313) Using a resist, and further using an RIBE method of irradiating ions in a beam shape perpendicularly to the etching sample as an etching method, by using a RIBE method for performing etching, the light emitting portion close to (320) is vertically (314) In addition to being able to be separated by the separation groove, it is possible to manufacture a vertical optical oscillator necessary for improving the characteristics of the surface emitting semiconductor laser.

Next, the (307) p-type Al _0.5 Ga _0.5
A buried layer is formed on the As clad layer. For this purpose, in this embodiment, the (313) resist is first removed, and then the (309) resist is removed by MBE or MOCVD.
A ZnS _0.06 Se _0.94 layer is embedded and grown (FIG. 6).
(D)).

Further, the (312) SiO ₂ layer and the polycrystalline ZnSSe formed thereon are removed, and subsequently, a region slightly smaller than the diameter of the light emitting portion is formed on the surface of the (303) contact layer with a resist. . A (310) p-type ohmic electrode is vapor-deposited on this surface, and an emission port is opened on the surface of the light emitting portion by using a lift-off method (FIG. 6E). Here, (310) p
The type ohmic electrode is formed so as to be electrically connected to each (308) contact layer of each (320) light emitting portion.

After that, two pairs of (311) SiO ₂ / a-Si dielectric multilayer mirrors are formed by electron beam evaporation so as to cover the top of the emission port. (302) n-type GaAs
A (301) n-type ohmic electrode is deposited on the substrate side (see FIG. 6).
(F)). Finally, in an N2 atmosphere, at 400 ° C.
Performing alloying.

Here, in the (300) semiconductor laser of the present embodiment, the (314) separation groove buried with ZnS _0.06 Se _0.94 is also used.
(311) Since we decided to make a dielectric multilayer mirror,
A vertical resonator structure is also formed in the area sandwiched by the light emitting parts,
Therefore, the light leaked to the (314) separation groove also effectively contributes to laser oscillation, and the leaked light is used, so that (320) light emission is synchronized with the phase of the light emitting unit.

As described above, (320) shown in FIG.
A (300) surface-emitting type semiconductor laser having a light emitting portion can be obtained.

In the thus fabricated (300) surface emitting semiconductor laser of this embodiment, the ZnS
_{Since the 0.06} Se _0.94 layer has a resistance of IGΩ or more and the leakage of the injection current into the (309) buried layer does not occur, extremely effective current confinement is achieved. Further, since the (209) buried layer does not need to have a multilayer structure, it can be easily grown, and the reproducibility between batches is high. Since this surface emitting semiconductor laser has a rib waveguide structure, ZnS _0.06 Se
_The difference in the refractive index between the active layer below the _0.94 layer and the active layer in the resonator section is increased, and effective light confinement is achieved at the same time.

Further, in the (300) surface emitting semiconductor laser of this embodiment, since the (314) dielectric multilayer mirror is formed also on the (314) separation groove embedded with ZnS _0.06 Se _0.94 , The vertical cavity structure is also formed in the sandwiched region, and therefore, the light leaked to the (314) separation groove effectively contributes to the laser oscillation. Light emission is synchronized. (2) Embodiments 4 to 6 Embodiments 4 to 6 are embodiments in which a (430) phase shift layer is provided at a (431) light exit as shown in FIG. 7A.

Specifically, a (431) phase shift layer having an appropriate thickness is provided at the (431) light emitting port, and a (411) dielectric multilayer mirror is formed thereon, whereby the (431) light By changing the effective resonator length of the standing wave generated below the emission port, the reflection surface of the (411) dielectric multilayer mirror is the same as the (16) virtual reflection surface inside the (410) p-type ohmic electrode. Position.

As a result, as shown in FIG.
31) the wavelength lambda ₁ of the standing wave generated under the light exit opening (41
0) The wavelength λ of the standing wave generated below the p-type ohmic electrode
_{Since 2} is equal, the standing wave generated in the optical waveguide resonator can be made uniform in the element, and the entire element volume can effectively function as a laser resonator.

The phase shift layer needs to be made of a material that is substantially transparent to the oscillation wavelength and that has a refractive index close to that of a semiconductor. This is because it is desirable that the influence of reflection at the interface with the semiconductor interface can be ignored.

Further, in order to provide a semiconductor laser having better performance and higher reliability, it is preferable to use a formation method which does not damage the semiconductor surface when manufacturing the (430) phase shift layer. . For this purpose, a process is desired in which a phase shift layer can be formed at a low temperature of 200 ° C. or lower and a lift-off method using a resist can be used. (A) Example 4 In this example, a dielectric material,
For example, this is an example in which amorphous silicon (hereinafter, referred to as a-Si) is used, and FIGS.
1 shows a cross-sectional view of a manufacturing process of the semiconductor laser according to the present embodiment.

In this embodiment, a phase shift layer is provided instead of the (204) distributed reflection type multi-layer mirror composed of a semiconductor multi-layer mirror in the second embodiment, and a ring-shaped p-type ohmic electrode is formed. It solves problems caused by existence. Therefore, FIG. 8 shows only the step after the p-type ohmic electrode is deposited as shown in FIG. 4E and the light emission port is opened, and the steps before that are omitted.

Hereinafter, the structure and manufacturing process of this embodiment will be described with reference to FIGS. 8 (a) to 8 (e).

First, after forming a (410) p-type ohmic electrode and (431) opening a light emitting port (FIG. 8A), (433) resist is applied to portions other than the phase shift layer. (43
1) A pattern is formed so that the light emission port is exposed (FIG. 8B).

Next, (430) aS to be a phase shift layer
i is deposited to a predetermined thickness d using an EB deposition method or the like (FIG. 8C). In other words, the thickness of (4) is such that the reflection surface of the (411) dielectric multilayer mirror to be formed thereafter is located at the same position as the virtual reflection surface inside the (410) p-type ohmic electrode.
30) Form a phase shift layer. In this case, as shown in the figure, a-Si is deposited not only on the semiconductor layer and the p-type ohmic electrode, but also on the (433) resist.

Next, as it is, that is, four pairs of (411) SiO ₂ / a-Si dielectric multilayer mirrors are successively deposited in the same furnace (FIG. 8D). As described above, in this embodiment, since the phase shift layer and the dielectric multilayer mirror can be continuously formed in the same furnace, it is possible to improve laser characteristics, process yield, reliability, and the like.

Next, this is put into an acetone solution, and ultrasonic vibration is applied to lift off. That is, the (433) resist, the (430) phase shift layer deposited on this resist, and the (411) dielectric multilayer mirror are removed by lift-off, and then the (402) n-type GaAs substrate side has (401) ) An n-type ohmic electrode is deposited (FIG. 8E). Finally, N ₂
Alloying at 400 ° C. is performed in an atmosphere.

By the above steps, as shown in FIG. 8E, the (430) phase shift layer and the (411)
An upper reflection mirror having a structure in which the dielectric multilayer mirror is sandwiched can be formed. In this case, the (430) phase shift layer only needs to be at least in the (431) light emitting port, and may have a structure that covers the (410) p-type ohmic electrode as shown in FIG. , Without covering
(431) The structure may be present only in the light exit.

In this embodiment, a-Si is used as the material of the phase shift layer (430). The index of refraction of a-Si is (408) p formed below the (430) phase shift layer.
It is relatively close to the refractive index of the type Al _0.15 Ga _0.85 As contact layer. A-Si has a small amount of light absorption around 780 nm, but has a small light absorption coefficient in other regions, for example, around 870 nm. Therefore, it becomes suitable as a material of the phase shift layer used for the semiconductor laser having the oscillation frequency in this region.

Further, by using a dielectric material such as a-Si, as described above, a (411) dielectric multilayer mirror is formed in the same furnace following the formation of the (430) phase shift layer. Therefore, the process is not complicated, the number of steps is small, a simple manufacturing method can be obtained, and the reliability and the laser characteristics can be improved.

Further, since the (430) phase shift layer using a-Si can be formed at room temperature, it can be patterned by a lift-off method using a resist mask. Therefore, as compared with the case of patterning using a method such as dry etching, there are advantages that the surface of the semiconductor laser is less likely to be damaged during etching and that the process can be simplified.

The dielectric material used for the phase shift layer of this embodiment is not limited to a-Si, but may be SixN.
y, TiO ₂ , CeO ₂ , ZnSSe, GaAs, C
Various dielectric materials such as dS can be used.

For example, SixNy, TiO ₂ , CeO
₂ has a low light absorption coefficient in a wide range similarly to the above-described a-Si, and is formed under the phase shift layer (4).
08) The refractive index is relatively close to that of the p-type Al _0.15 Ga _0.85 As contact layer. Therefore, it becomes suitable as the phase shift layer of this embodiment. Further, since the growth can be performed at a temperature of 200 ° C. or less, patterning can be performed by using the lift-off method described above, and there is an advantage that the surface of the semiconductor laser is hardly damaged.

On the other hand, ZnSSe, GaAs, Cd
S is difficult to grow at a temperature of 200 ° C. or less. Therefore, the (433) resist is deformed during the growth, and it is difficult to perform patterning using the lift-off method. However, these dielectric materials are a-Si
Has an advantage in that the light absorption coefficient is small in a wider range, for example, there is almost no light absorption at 780 nm.

As described above, for a dielectric material for which the lift-off method cannot be used for patterning the phase shift layer, the dry etching method is used in the manufacturing steps shown in FIGS. 9A to 9E. Perform desired patterning.

First, (410) a p-type ohmic electrode is formed, and (431) a light emission port is opened (FIG. 9A).
A phase shift layer (430) made of ZnSSe, GaAs, or the like is formed on the entire surface of the semiconductor laser to have a predetermined thickness d by using the D method and the MBE method (FIG. 9).
(B)).

Next, a resist (435) is formed in a region other than a portion where etching is desired (FIG. 9C).

Next, (4)
30) Etch the phase shift layer (FIG. 9D).

Next, a (433) resist is formed, and then four pairs of (411) SiO ₂ / a are formed on the entire surface of the semiconductor laser.
-Deposit a Si dielectric multilayer mirror (FIG. 9E).

Next, this was put in an acetone solution and lifted off by applying ultrasonic vibration, and then (402) n-type GaAs
A (401) n-type ohmic electrode is deposited on the substrate side (see FIG. 9).
(F)). Finally, alloying at 400 ° C. is performed in an N 2 atmosphere. (B) Example 5 This example is an example in which a semiconductor layer is regrown to form a phase shift layer by using the MBE method, the MOCVD method, or the like, and FIGS. 10A to 10C are used. 1 shows a cross-sectional view of a manufacturing process of the semiconductor laser according to the present embodiment.

As in the case of the fourth embodiment, FIG. 10 shows only the steps after the deposition of the p-type ohmic electrode and the opening of the light exit, and the steps before that are omitted. I have.

Hereinafter, the configuration and the manufacturing method of this embodiment will be described.

First, in this embodiment, a (510) p-type ohmic electrode is formed, and (531) after opening a light emission port (FIG. 10)
(A)), the semiconductor layer is regrown by using the MBE method, the MOCVD method or the like, and a (530) phase shift layer is formed so as to have a desired film thickness d (FIG. 10B). That is, by using a crystal method capable of growing a semiconductor layer at a relatively low temperature, for example, 400 ° C. or lower, (508) p-type Al _0.15 Ga
Forming a semiconductor layer having the same composition as the _0.85 As contact layer,
This is designated as (530) phase shift layer.

Thereafter, two pairs of (511) SiO ₂ / a-Si dielectric multilayer mirrors are formed by electron beam evaporation to cover the (531) light exit. Further (502) n
A (501) n-type ohmic electrode is deposited on the type GaAs substrate side (FIG. 10C). Finally, alloying at 400 ° C. is performed in an N ₂ atmosphere.

According to this embodiment, the (530) phase shift layer can be formed by re-growing the (508) p-type Al _0.15 Ga _0.85 As contact layer thereunder, and these are formed of the same material. You can do it. Therefore,
(530) Phase shift layer and (508) p-type Al _0.15 Ga _0.85 As
Light-related problems such as interface reflection and light absorption of light at the boundary with the contact layer can be neglected. As a result,
(530) The deterioration of the laser characteristics due to the insertion of the phase shift layer can be almost ignored, and a semiconductor laser with excellent performance can be provided.

The step of regrowth of the semiconductor layer can be performed by the same process as that of the underlying semiconductor layer such as the cladding layer and the active layer. In this process, the MBE method and the MOCVD method are usually used. The thickness d can be controlled in units of several angstroms. Therefore, it is possible to control the film thickness d so that the wavelengths λ ₁ and λ _{2 of the} standing waves generated below the (531) light emission port and below the (510) p-type ohmic electrode are almost equal. Becomes As a result, the standing wave generated in the optical resonator can be made uniform in the element, and the laser characteristics can be greatly improved. (C) Example 6 In this example, after forming a p-type ohmic electrode, an organic material such as polyimide or PMMA was formed on the surface of a semiconductor laser by using a coating method such as spin coating to form a phase shift layer. For example, FIGS. 11A to 11E are cross-sectional views illustrating a manufacturing process of the semiconductor laser according to the present embodiment.

As in the case of the fourth and fifth embodiments, FIG.
In FIG. 1, only the steps after vapor deposition of a p-type ohmic electrode and opening of a light exit port are shown, and steps before that are omitted.

Hereinafter, the configuration and the manufacturing method of this embodiment will be described.

First, in this embodiment, after forming a (610) p-type ohmic electrode and (631) opening a light emitting port (FIG. 11)
(A)) A phase shift layer made of an organic material such as polyimide or PMMA (630) is formed on the entire surface of the semiconductor laser by a coating method such as spin coating so as to have a desired film thickness d (FIG. 11). (B)).

Next, (6) on the (610) p-type ohmic electrode
30) The phase shift layer is etched by wet etching or dry etching to perform (630) patterning of the phase shift layer (FIG. 11C).

Next, a (633) resist is formed, and then four pairs of (611) SiO ₂ / a are formed on the entire surface of the semiconductor laser.
-Deposit a Si dielectric multilayer mirror (FIG. 11)
(E)).

Next, this was put into an acetone solution, and ultrasonic vibration was applied to lift off it. Thereafter, (602) n-type GaAs
A (601) n-type ohmic electrode is deposited on the substrate side (FIG. 11).
(f)). Finally, alloying at 400 ° C. is performed in an N 2 atmosphere.

According to the present embodiment, the (630) phase shift layer can be formed by a coating process such as spin coating, so that the manufacturing method can be extremely simplified.

The polyimides and PMMAs mentioned here
Organic materials such as have a low light absorption coefficient in a wide range,
For example, there is almost no light absorption at 870 nm. Also, the refractive index is relatively close to the underlying semiconductor layer. Therefore, it is suitable as a material of the phase shift layer in the present embodiment. However, even if an organic material other than the above-mentioned polyimide and PMMA is used, at least (1) the material should be transparent to the oscillation wavelength, and (2) the refractive index should be relatively close to the underlying semiconductor layer. If these conditions are satisfied, it can be used as the material of the phase shift layer in this embodiment. (D) Control of the thickness d of the phase shift layer The phase change of the reflected wave at the interface between the metal and the semiconductor varies depending on the material and thickness of the metal. Therefore, it is preferable to control the thickness d of the phase shift layer by obtaining the thickness d by, for example, a method described below. Hereinafter, this method will be described with reference to FIGS. FIG. 12 shows a case where the design wave number is m = 1 (1/2).

First, a semiconductor laser without an upper reflection film and a phase shift layer is manufactured, and its LED spectrum is measured. FIG. 12A shows an example of this measurement result. As shown in FIG. 12A, the peak λ ₁ of the wavelength of the standing wave generated below the light exit and the portion below the p-type ohmic electrode are shown. The peak λ ₂ of the wavelength of the standing wave can be measured.

Next, as shown in FIG. 12B, the effective resonator length L ₁ is obtained by multiplying the design wave number m by the measured λ ₁ .

L ₁ = m × λ _{1 Further} , as shown in the figure, the required effective resonator length L ₂ is finally obtained by multiplying the design wave number m by the measured λ _2. .

[0108] L ₂ = m × λ ₂ Then, the difference ΔL of the L ₁ and L ₂ is a variation of the effective cavity length.

ΔL = L ₂ −L ₁ Finally, by dividing this ΔL by the refractive index n of the material forming the phase shift layer, the thickness d of the phase shift layer to be formed is obtained.

D = ΔL / n When forming the phase shift layer, the thickness of the phase shift layer is adjusted so as to become the film thickness d obtained as described above.
It will control the process.

If the thickness d of the phase shift layer cannot be controlled stably, or if it is desired to control the thickness d with higher accuracy, the thickness d is controlled by the following method. .

That is, a semiconductor laser provided with a phase shift layer having a predetermined thickness is manufactured, and L
The wavelengths λ ₁ and λ ₂ are measured by the ED spectrum. Then, the difference Δd from the film thickness to be set is calculated by the following equation.
(Δd for equalizing λ ₁ and λ ₂ ) is obtained.

[0113] Δd = m × (λ ₂ over lambda ₁₎ / n Then, feeding back the [Delta] d sequential process, so that the [Delta] d becomes zero, varying the process conditions the film thickness d. Thus, the film thickness d can be controlled stably, and the film thickness d can be controlled with higher accuracy.

The phase shift φ of the reflected wave at the metal-semiconductor interface is directly measured by a method such as externally applying a laser beam, and the measured value is used to determine the change ΔL of the effective resonator length and the phase shift φ. It is also possible to control the film thickness d by approximating the film thickness d of the shift layer.

Note that the present invention is not limited to the above-described embodiment, and various modifications can be made within the scope of the present invention.

For example, in each of the above embodiments, GaAlA
Although an s-based surface emitting semiconductor laser has been described, the present invention is not limited to this, and can be suitably applied to other group III-V based surface emitting semiconductor lasers. Can be used to change the oscillation wavelength.

The buried layer is not limited to the ZnSSe mixed crystal, but may be a ZnS—ZnSe superlattice, another II-VI group compound semiconductor such as ZnSe, ZnS, CdTe, or a crystal thereof or a superlattice of these materials. The same effect can be obtained by choosing.

In the first embodiment, the case where dimethylzinc-dimethylselenium is used as the organometallic adduct and H ₂ S (hydrogen selenide) is used as the hydrogen compound has been described. However, the present invention is not limited to this. For example, the respective buried layers can be formed by the combinations shown in Table 1.

The phase shift layer may be made of a single crystal such as a-Si or a mixed crystal.

Further, the substrate is not limited to GaAs,
Similar effects were obtained with a semiconductor substrate such as InP or InP or a dielectric substrate such as sapphire.

In the fourth to sixth embodiments, the semiconductor laser having a buried type refractive index waveguide structure corresponding to the second embodiment has been described as an example. However, the present invention is not limited to this, and corresponds to, for example, the first embodiment. Naturally, the present invention can be applied to a semiconductor laser having a rib waveguide structure described above and a surface emitting semiconductor laser having a plurality of columnar semiconductor layers corresponding to the third embodiment. When a phase shift layer is formed in a phase-locked laser having a plurality of columnar semiconductor layers as shown in the third embodiment, the phase shift layer is formed by opposing the surface of the plurality of columnar semiconductor layers and the buried layer between the columnar semiconductor layers. A phase shift layer can be provided over the region where the phase shift occurs.

Further, the optical resonator constituting the present invention has a plurality of semiconductor layers, but the meaning of the “plurality of layers” here means that there are a plurality of layers having different polarities. That is,
The optical resonator according to the present invention may have at least a p-type semiconductor layer and an n-type semiconductor layer. For example, the optical resonator may have a structure in which all the semiconductor layers are formed of the same material GaAs (different in polarity). It is also possible.

Further, the pair of reflection mirrors constituting the present invention is not limited to the one provided with one reflection mirror at each of the positions on both sides facing the optical resonator as in the above-described embodiment. For example, an output-side mirror provided at a position facing the optical resonator includes a plurality of mirrors, an input-side mirror includes a plurality of mirrors, and an output-side and input-side mirror includes a plurality of mirrors. A mirror constituted by one mirror is also included.

Further, it goes without saying that the surface emitting semiconductor laser of the present invention can be applied to not only printing apparatuses such as printers and copiers but also facsimile machines, displays and communication equipment.

[0125]

As described above in detail, according to the surface emitting type semiconductor laser of the first aspect of the present invention, the reflection mirror on the light emitting side is formed in a ring shape with the semiconductor multilayer film having the same size as the resonator diameter. By configuring the electrode and the dielectric multilayer mirror that covers the light exit port, since the semiconductor multilayer mirror exists under the electrode, it is possible to increase the reflectance of the resonator under the electrode. Since the inside efficiency does not decrease, a highly efficient surface emitting semiconductor laser can be provided.

Further, in the manufacturing method according to the second aspect of the present invention, among the reflecting mirrors on the light emitting side, the semiconductor multilayer mirror continuously grows crystal from the substrate together with the active layer constituting the resonator. Very stable because it is possible,
This is a manufacturing method capable of producing a surface emitting semiconductor laser with good reproducibility.

According to the surface emitting type semiconductor laser of the fourth and fifth aspects of the present invention, the wavelength of the standing wave generated under the metal electrode and under the light exit can be made substantially equal. Since the standing wave generated in the semiconductor laser can be made uniform, a highly efficient surface-emitting type semiconductor laser can be provided.

[Brief description of the drawings]

FIG. 1 is a perspective view illustrating a cross section of a semiconductor laser according to a first embodiment.

FIGS. 2A to 2F are cross-sectional views illustrating a manufacturing process of the semiconductor laser according to the first embodiment.

FIG. 3 is a perspective view showing a cross section of a semiconductor laser according to a second embodiment of the present invention.

FIGS. 4A to 4F are cross-sectional views illustrating a manufacturing process of the semiconductor laser according to the second embodiment.

FIG. 5 is a perspective view showing a cross section of a semiconductor laser according to a third embodiment of the present invention. .

FIGS. 6A to 6F are cross-sectional views illustrating manufacturing steps of a semiconductor laser according to a third embodiment.

FIGS. 7A and 7B are schematic explanatory diagrams illustrating extension of an effective resonator length using a phase shift layer. FIGS.

FIGS. 8A to 8E are cross-sectional views illustrating a manufacturing process of the semiconductor laser according to the fourth embodiment.

FIGS. 9A to 9F are cross-sectional views illustrating a manufacturing process of the semiconductor laser according to the fourth embodiment when dry etching is used for patterning the phase shift layer.

FIGS. 10A to 10C are cross-sectional views illustrating a manufacturing process of the semiconductor laser according to the fifth embodiment.

FIGS. 11A to 11E are cross-sectional views illustrating manufacturing steps of a semiconductor laser according to a sixth embodiment.

FIGS. 12A and 12B are schematic explanatory diagrams illustrating a technique for controlling the thickness of a phase shift layer.

FIG. 13 is a perspective view showing a cross section of a semiconductor laser before improvement.

FIGS. 14A to 14C are schematic explanatory diagrams illustrating a problem of wavelength uniformity of a standing wave generated by the presence of a ring-shaped p-type ohmic electrode.

[Explanation of symbols]

101, 201, 301, 401, 501, 601, 7
01 n-type ohmic electrode 102, 202, 302, 402, 502, 602, 7
02 n-type GaAs substrate 103, 203, 303, 403, 503, 603, 7
03 n-type GaAs buffer layer 104, 114, 204, 214, 304, 315, 4
04, 504, 604, 704 Distributed reflection multilayer mirror 105, 205, 405, 505, 605, 705 n
Type Al _0.4 Ga _0.6 As clad layer 106, 206, 406, 506, 606, 706p
Type GaAs active layer 107, 207, 407, 507, 607, 707p
Type Al _0.4 Ga _0.6 As clad layer 108, 208, 408, 508, 608, 708p
Type Al _0.1 Ga _0.9 As contact layer 109, 209, 309, 409, 509, 609, 7
09 ZnS _0.06 Se _0.94 buried layer 110, 210, 310, 410, 510, 610, 7
10 p-type ohmic electrode 111, 311, 411, 511, 611, 711 dielectric multilayer mirror 112, 212, 312 SiO ₂ layer 113, 213, 313 resist 305 n-type Al _0.5 Ga _0.5 As clad layer 306 p-type Al _0.13 Ga _0.87 As active layer 307 p-type Al _0.5 Ga _0.5 As clad layer 308 p-type Al _0.15 Ga _0.85 As contact layer 314 separation groove 430, 530, 630, 730 phase shift layer 431, 531, 631, 731 light emission port 433, 533, 633, 733 Resist 435 Resist 120, 220, 320 Light emitting unit

[Table 1]

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-4-130690 (JP, A) JP-A-4-263482 (JP, A) WO 91/16748 (WO, A1) (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01S 5/327

Claims (11)

(57) [Claims] 1. A surface emitting device that emits light in a direction perpendicular to a substrate.
In a method of manufacturing a semiconductor laser , an optical resonator is formed on a substrate made of a semiconductor or a dielectric.
Forming a pair of reflecting mirrors and at least
One semiconductor layer is formed by metal organic chemical vapor deposition or molecular beam deposition.
Forming by a epitaxial growth method and forming a photoresist mask on the semiconductor layer;
At least one of the semiconductor layers is formed of the photoresist;
Etching using a mask, one or more pillars
Forming a buried layer around the columnar semiconductor layer
And wherein the light-emitting-side reflection mirror of the reflection mirror is a substrate
Continuously, a first layer made of a semiconductor, and the first layer
The second layers made of semiconductors having different refractive indexes are alternately laminated.
After lengthening, a metal electrode having a light exit port on the second layer
A third pole formed of a dielectric on the light exit;
A fourth layer made of a dielectric material having a different refractive index from the third layer.
Layers are alternately stacked, and the reflection layer is formed by alternately stacking the first layer and the second layer.
When viewed from a direction perpendicular to the substrate,
Formed to have the same size as the semiconductor layer,
One, the light exit port is viewed from a direction perpendicular to the substrate,
A method of manufacturing a surface-emitting type semiconductor laser , wherein the semiconductor layer is formed smaller than the columnar semiconductor layer, and the buried layer is formed of an epitaxial layer of a II-VI compound semiconductor. 2. The light-emitting-side reflection mirror of the reflection mirror according to claim 1,
The first layer is a group III-V compound semiconductor, and the second layer is a layer made of a group III-V compound semiconductor having a different refractive index from the first layer. A method for manufacturing a semiconductor laser. 3. The buried layer according to claim 1, wherein the buried layer is formed by an organometallic chemical vapor deposition method using an adduct composed of a group II organic compound and a group VI organic compound and a group VI hydrogen compound as raw materials. A method for manufacturing a surface-emitting type semiconductor laser. 4. A surface emitting device that emits light in a direction perpendicular to a substrate.
In a method of manufacturing a semiconductor laser , an optical resonator is formed on a substrate made of a semiconductor or a dielectric.
Forming a pair of reflecting mirrors and at least
One semiconductor layer is formed by metal organic chemical vapor deposition or molecular beam deposition.
Forming by a epitaxial growth method and forming a photoresist mask on the semiconductor layer;
At least one of the semiconductor layers is formed of the photoresist;
Etching using a mask, one or more pillars
Forming a buried layer around the columnar semiconductor layer
And wherein the light-emitting-side reflection mirror of the reflection mirror is a substrate
Continuously, a first layer made of a semiconductor, and the first layer
The second layers made of semiconductors having different refractive indexes are alternately laminated.
After lengthening, a metal electrode having a light exit port on the second layer
A third pole formed of a dielectric on the light exit;
A fourth layer made of a dielectric material having a different refractive index from the third layer.
Layers are alternately stacked, and the reflection layer is formed by alternately stacking the first layer and the second layer.
When viewed from a direction perpendicular to the substrate,
Formed to have the same size as the semiconductor layer,
One, the light exit port is viewed from a direction perpendicular to the substrate,
The buried layer is formed smaller than the columnar semiconductor layer, and the buried layer is formed by metalorganic chemical vapor deposition using an adduct composed of a group II organic compound and a group VI organic compound and a group VI hydrogen compound as raw materials. A method for manufacturing a surface-emitting type semiconductor laser. 5. A surface-emitting type semiconductor laser that emits light in a direction perpendicular to a substrate, comprising: a pair of reflecting mirrors; and a plurality of semiconductor layers between them, and at least one of the semiconductor layers. An optical resonator in which one or a plurality of columns are formed, a layer embedded around the columnar semiconductor layer, a metal electrode formed on the semiconductor layer and having a light emission port, A phase shift layer provided in the light exit port, wherein the material of the phase shift layer has a small absorption coefficient with respect to the oscillation frequency and has a refractive index substantially equal to that of the semiconductor layer in contact with the boundary with the phase shift layer. A surface emitting semiconductor laser characterized by the following. 6. The surface emitting semiconductor laser according to claim 5, wherein the buried layer comprises an epitaxial layer of a II-VI compound semiconductor. 7. A surface-emitting type semiconductor laser that emits light in a direction perpendicular to a substrate, comprising: a pair of reflecting mirrors; and a plurality of semiconductor layers between them, and at least one of the semiconductor layers An optical resonator in which one or a plurality of columns are formed; a layer embedded around the columnar semiconductor layer; a metal electrode formed on the semiconductor layer and having a light exit port; A phase shift layer provided in the light exit, and wherein the thickness of the phase shift layer is such that the wavelength of the standing wave generated below the light exit is generated under the metal electrode. Characterized in that the thickness is set to be substantially equal to the wavelength of the surface emitting semiconductor laser. 8. The surface emitting semiconductor laser according to claim 7, wherein the buried layer comprises an epitaxial layer of a II-VI compound semiconductor. 9. The phase shift layer according to claim 5, wherein the phase shift layer is made of a dielectric material capable of continuously forming a light emitting side reflection mirror made of a dielectric material on the phase shift layer. A surface-emitting type semiconductor laser characterized by the above-mentioned. 10. The surface according to claim 5, wherein a material of the phase shift layer is the same as a material of the semiconductor layer that can be formed by continuously regrowing the semiconductor layer. Emission type semiconductor laser. 11. The surface-emitting type according to claim 5, wherein a material of the phase shift layer is an organic material that can be applied and formed at least in a light emission port on a surface of the optical resonator. Semiconductor laser.