JP3291679B2 - Gold alloy wires for semiconductor devices - Google Patents

Gold alloy wires for semiconductor devices

Info

Publication number
JP3291679B2
JP3291679B2 JP12856896A JP12856896A JP3291679B2 JP 3291679 B2 JP3291679 B2 JP 3291679B2 JP 12856896 A JP12856896 A JP 12856896A JP 12856896 A JP12856896 A JP 12856896A JP 3291679 B2 JP3291679 B2 JP 3291679B2
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JP
Japan
Prior art keywords
ppm
gold alloy
bonding
wires
rare earth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP12856896A
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Japanese (ja)
Other versions
JPH09316567A (en
Inventor
潔 古川
浩二 松本
正信 松澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Priority to JP12856896A priority Critical patent/JP3291679B2/en
Publication of JPH09316567A publication Critical patent/JPH09316567A/en
Application granted granted Critical
Publication of JP3291679B2 publication Critical patent/JP3291679B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】この発明は、半導体装置のボ
ンディングワイヤーとして使用する金合金細線に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gold alloy thin wire used as a bonding wire of a semiconductor device.

【０００２】[0002]

【従来の技術】半導体装置のボンディングワイヤーとし
て使用する金合金細線としては、 （ａ）Ａｕ中にＰｄ：１〜４０ｗｔ％を含有し、さらに
Ｓｃ、Ｙ、希土類元素のの内の一種または二種以上：
０．０００１〜０．０５ｗｔ％を含有せしめてなる金合
金細線、 （ｂ）Ａｕ中にＰｄ：１〜４０ｗｔ％、Ｓｃ、Ｙ、希土
類元素の内の一種または二種以上：０．０００１〜０．
０５ｗｔ％を含有し、さらにＢｅ、Ｃａ、Ｇｅ、Ｎｉ、
Ｆｅ、Ｃｏ、Ａｇの内の一種または二種以上：０．００
０１〜０．０５ｗｔ％を含有せしめてなる金合金細線
（以上、特開平６−１１２２５５号公報参照）、 （ｃ）Ａｕ中にＰｄ、Ｐｔ、Ｒｈ、Ｏｓ、Ｒｕの内の一
種または二種以上：０．０００３〜０．１ｗｔ％を含有
し、さらにＳｃ、Ｙ、希土類元素の内の一種または二種
以上：０．０００１〜０．０５ｗｔ％を含有せしめてな
る金合金細線（以上、特開平６−１１２２５６号公報参
照）、 （ｄ）Ａｕ中にＯｓ、Ｒｕ、Ｉｒ、Ｒｈの内の一種また
は二種以上を総量で：０．０００３〜０．１ｗｔ％を含
有せしめてなる金合金細線、 （ｅ）Ａｕ中にＯｓ、Ｒｕ、Ｉｒ、Ｒｈの内の一種また
は二種以上を総量で：０．０００３〜０．１ｗｔ％を含
有し、さらにＢｅ、Ｇｅ、Ｃａ、Ｓｉ、Ｆｅ、Ｓｃ、
Ｙ、希土類元素の中から一種または二種以上：０．００
０１〜０．０５ｗｔ％を含有せしめてなる金合金細線
（以上、特開平６−１１２２５７号公報参照）、 （ｆ）Ａｕ中にＰｔ：１〜３０ｗｔ％を含有し、さらに
Ｓｃ、Ｙ、希土類元素の内の一種または二種以上：０．
０００１〜０．０５ｗｔ％を含有せしめてなる金合金細
線、 （ｇ）Ａｕ中にＰｔ：１〜３０ｗｔ％、Ｓｃ、Ｙ、希土
類元素の内の一種または二種以上：０．０００１〜０．
０５ｗｔ％を含有し、さらにＢｅ、Ｃａ、Ｇｅ、Ｎｉ、
Ｆｅ、Ｃｏ、Ａｇの一種または二種以上：０．０００１
〜０．０５ｗｔ％を含有せしめてなる金合金細線（以
上、特開平６−１１２２５８号公報参照）、 （ｈ）Ａｕ中にＰｄ、Ｐｔ、Ｒｈ、Ｏｓ、Ｒｕの内の一
種または二種以上：０．０００３〜０．１ｗｔ％、Ｓ
ｃ、Ｙ、希土類元素の中から一種または二種以上：０．
０００１〜０．０５ｗｔ％を含有し、さらにＢｅ、Ｃ
ａ、Ｇｅ、Ｎｉ、Ｆｅ、Ｃｏ、Ａｇの一種または二種以
上：０．０００１〜０．０５ｗｔ％を含有せしめてなる
金合金細線（以上、特開平６−１１２２５９号公報参
照）、 （ｉ）Ａｕ中にＰｄ、Ｐｔ、Ｒｈ、Ｏｓ、Ｒｕの内の一
種または二種以上を総量で０．１〜５ｗｔ％を含有せし
めてなる金合金細線、 （ｊ）Ａｕ中にＰｄ、Ｐｔ、Ｒｈ、Ｏｓ、Ｒｕの内の一
種または二種以上を総量で０．１〜５ｗｔ％、Ｃａ、Ｂ
ｅ、Ｇｅ、Ｓｉ、Ｆｅ、Ｙ、希土類元素の中から一種ま
たは二種以上を総量で０．０００１〜０．００５ｗｔ％
を含有せしめてなる金合金細線（以上、特開平６−１１
２２５１号公報参照）、などが知られている。2. Description of the Related Art Gold alloy thin wires used as bonding wires for semiconductor devices include: (a) Au containing 1-40 wt% of Pd, and one or two of Sc, Y and rare earth elements. that's all:
(B) Pd in Au: 1 to 40 wt%, one or more of Sc, Y and rare earth elements: 0.0001 to 0 .
05 wt%, and further contains Be, Ca, Ge, Ni,
One or more of Fe, Co, and Ag: 0.00
A gold alloy thin wire containing 0.01 to 0.05 wt% (see JP-A-6-112255); (c) one or more of Pd, Pt, Rh, Os, and Ru in Au : A gold alloy thin wire containing 0.0003 to 0.1 wt%, and further containing one or more of Sc, Y and rare earth elements: 0.0001 to 0.05 wt%. (D) Au alloy thin wire comprising one or more of Os, Ru, Ir, and Rh in Au in a total amount of 0.0003 to 0.1 wt%; (E) Au contains one or more of Os, Ru, Ir, and Rh in a total amount of 0.0003 to 0.1 wt%, and further contains Be, Ge, Ca, Si, Fe, Sc,
Y, one or more of rare earth elements: 0.00
A gold alloy thin wire containing 01 to 0.05 wt% (refer to JP-A-6-112257); (f) Au containing 1 to 30 wt% of Pt, further containing Sc, Y and rare earth elements One or more of the following:
(G) Pt in Au: 1 to 30 wt%, one or more of Sc, Y, and rare earth elements: 0.0001 to 0.
05 wt%, and further contains Be, Ca, Ge, Ni,
One or more of Fe, Co, and Ag: 0.0001
Gold alloy thin wire containing -0.05 wt% (refer to JP-A-6-112258); (h) one or more of Pd, Pt, Rh, Os, and Ru in Au: 0.0003-0.1wt%, S
one or more of c, Y, and rare earth elements:
0001-0.05 wt%, and Be, C
one or more of a, Ge, Ni, Fe, Co, and Ag: a gold alloy thin wire containing 0.0001 to 0.05 wt% (see JP-A-6-112259); (i) Au alloy fine wire containing one or more of Pd, Pt, Rh, Os, and Ru in Au in a total amount of 0.1 to 5 wt%, (j) Pd, Pt, Rh, Au in Au One or more of Os and Ru in a total amount of 0.1 to 5 wt%, Ca, B
e, Ge, Si, Fe, Y, and one or more of rare earth elements in a total amount of 0.0001 to 0.005 wt%
Containing gold alloy (hereinafter referred to as JP-A-6-11)
2251) and the like.

【０００３】[0003]

【発明が解決しようとする課題】しかし、近年の半導体
装置においては、接合点間隔が４ｍｍを越えるような長
ループを形成し、しかもワイヤ相互間の距離が益々狭く
なるようなボンディングが求められており、この要求に
対して、前記従来の金合金細線では十分に信頼性のある
ボンディングは得られなかった。However, in recent semiconductor devices, there has been a demand for bonding that forms a long loop in which the distance between junctions exceeds 4 mm and that further reduces the distance between wires. In response to this demand, a sufficiently reliable bonding cannot be obtained with the conventional gold alloy thin wire.

【０００４】[0004]

【課題を解決するための手段】そこで、本発明者らは、
従来よりも信頼性のあるボンディングができる金合金細
線を得るべく研究を行った結果、信頼性のあるボンディ
ングができる金合金細線は高温強度が優れていることは
勿論であるが、ボンディング時に形成されるボールの真
球性、ループの安定性、耐樹脂流れ性、接合性などが共
に優れていることが必要であり、これらの特性を満たす
半導体装置用金合金細線として、Ｐｄ、Ｒｕ、Ｐｔ、Ｉ
ｒ、Ｒｈの内の一種または二種以上：１〜５０００ｗ
ｔ．ｐｐｍ、Ｃａ、Ｂｅ、Ｇｅ、Ｓｉ、Ｉｎ、Ａｇの内
の一種または二種以上：０．２〜１００ｗｔ．ｐｐｍ、
希土類元素の内の一種または二種以上：０．２〜１００
ｗｔ．ｐｐｍ、Ｃｕ、Ｐｂ、Ｌｉ、Ｔｉの内の一種また
は二種以上：０．２〜１００ｗｔ．ｐｐｍを含有し、残
りがＡｕおよび不可避不純物からなる組成を有する半導
体装置用金合金細線を発明し、これを出願した（特願平
７−１９６６３号）。Means for Solving the Problems Accordingly, the present inventors have:
As a result of researching to obtain a gold alloy thin wire that can perform more reliable bonding than before, the gold alloy fine wire that can perform reliable bonding is, of course, excellent in high-temperature strength, but formed at the time of bonding. It is necessary that the ball has excellent sphericity, loop stability, resin flow resistance, bonding property, etc., and Pd, Ru, Pt, I
One or more of r and Rh: 1 to 5000 w
t. ppm, one or more of Ca, Be, Ge, Si, In, and Ag: 0.2 to 100 wt. ppm,
One or more of the rare earth elements: 0.2 to 100
wt. ppm, one or more of Cu, Pb, Li, and Ti: 0.2 to 100 wt. The present inventors invented a gold alloy fine wire for a semiconductor device having a composition containing ppm and the balance consisting of Au and unavoidable impurities, and filed an application for this (Japanese Patent Application No. 7-19663).

【０００５】従って、前記特願平７−１９６６３号の発
明は、Ｐｄ、Ｒｕ、Ｐｔ、Ｉｒ、Ｒｈの内の一種または
二種以上：１〜５０００ｗｔ．ｐｐｍ、Ｃａ、Ｂｅ、Ｇ
ｅ、Ｓｉ、Ｉｎ、Ａｇの内の一種または二種以上：０．
２〜１００ｗｔ．ｐｐｍ、希土類元素の内の一種または
二種以上：０．２〜１００ｗｔ．ｐｐｍ、Ｃｕ、Ｐｂ、
Ｌｉ、Ｔｉの内の一種または二種以上：０．２〜１００
ｗｔ．ｐｐｍを含有し、残りがＡｕおよび不可避不純物
からなる組成を有する半導体装置用金合金細線に特徴を
有するものである。しかし、本発明者らは、前記特願平
７−１９６６３号の半導体装置用金合金細線に含まれ
る、Ｐｄ、Ｒｕ、Ｐｔ、Ｉｒ、Ｒｈの内の一種または二
種以上、Ｃａ、Ｂｅ、Ｇｅ、Ｓｉ、Ｉｎ、Ａｇの内の一
種または二種以上、希土類元素の内の一種または二種以
上、並びにＣｕ、Ｐｂ、Ｌｉ、Ｔｉの内の一種または二
種以上のそれぞれの群の成分組成の半導体装置用金合金
細線に及ぼす影響について、さらに研究を行ったとこ
ろ、前記Ｃｕ、Ｐｂ、Ｌｉ、Ｔｉの内の一種または二種
以上の成分は１００ｗｔ．ｐｐｍを越えて含まれると接
合性が劣化するするので好ましくないと考えられていた
が、Ｃｕ、Ｐｂ、Ｌｉ、Ｔｉの内の一種または二種以上
を５００ｗｔ．ｐｐｍ以上含有すると接合性が再び向上
し、これらＣｕ、Ｐｂ、Ｌｉ、Ｔｉの内の一種または二
種以上の成分はボールの真球性を向上させる成分である
ところから、多量に添加するとボンディング時に形成さ
れるボールの真球性を劣化させると言われている成分の
Ｐｄ、Ｒｕ、Ｐｔ、Ｉｒ、Ｒｈの内の一種または二種以
上を１〜１００００ｗｔ．ｐｐｍの範囲に広げて含有さ
せてもボンディング時に形成されるボールの真球性が劣
化することはない、という知見を得たのである。[0005] Accordingly, the invention of Japanese Patent Application No. 7-19663 discloses one or more of Pd, Ru, Pt, Ir and Rh: 1 to 5000 wt. ppm, Ca, Be, G
e, Si, In, or one or more of Ag: 0.
2 to 100 wt. ppm, one or more of the rare earth elements: 0.2 to 100 wt. ppm, Cu, Pb,
One or more of Li and Ti: 0.2 to 100
wt. The semiconductor device according to the present invention is characterized in that it is a gold alloy fine wire for a semiconductor device having a composition containing ppm and the balance consisting of Au and unavoidable impurities. However, the present inventors have proposed that one or two or more of Pd, Ru, Pt, Ir, and Rh contained in the gold alloy thin wires for a semiconductor device described in Japanese Patent Application No. 7-19663, Ca, Be, Ge. , Si, In, one or more of Ag, one or more of rare earth elements, and one or more of Cu, Pb, Li, Ti Further studies were conducted on the effects on the gold alloy wires for semiconductor devices. One or more of the above-mentioned components of Cu, Pb, Li, and Ti were 100 wt. If it is contained in excess of ppm, it has been considered unfavorable because the bondability is degraded, but one or more of Cu, Pb, Li and Ti may be used in an amount of 500 wt. When the content is at least ppm, the bonding property is improved again, and one or more of these components of Cu, Pb, Li, and Ti are components that improve the sphericity of the ball. One or more of Pd, Ru, Pt, Ir, and Rh, which are said to degrade the sphericity of the formed ball, are 1 to 10,000 wt. It has been found that the sphericity of the ball formed at the time of bonding does not deteriorate even if the content is extended to the ppm range.

【０００６】この発明は、かかる知見にもとづいてなさ
れたものであって、Ｐｄ、Ｒｕ、Ｐｔ、Ｉｒ、Ｒｈの内
の一種または二種以上：１〜１００００ｗｔ．ｐｐｍ、
Ｓｉ、Ａｇの内の一種または二種：０．２〜１００ｗ
ｔ．ｐｐｍ、希土類元素の内の一種または二種以上：
０．２〜１００ｗｔ．ｐｐｍ、Ｃｕ、Ｐｂ、Ｌｉ、Ｔｉ
の内の一種または二種以上：５００〜１００００ｗｔ．
ｐｐｍ、を含有し、残りがＡｕおよび不可避不純物から
なる組成を有する半導体装置用金合金細線に特徴を有す
るものである。この発明の半導体装置用金合金細線に含
有する成分組成を前記のごとく限定したのは下記の理由
によるものである。The present invention has been made based on such findings, and one or more of Pd, Ru, Pt, Ir, and Rh: 1 to 10,000 wt. ppm,
One or two of Si and Ag: 0.2 to 100 w
t. ppm, one or more of the rare earth elements:
0.2-100 wt. ppm, Cu, Pb, Li, Ti
One or more of the following: 500 to 10,000 wt.
ppm, the balance being Au and unavoidable impurities. The reasons for limiting the composition of components contained in the fine gold alloy wires for semiconductor devices of the present invention as described above are as follows.

【０００７】（ａ）Ｐｄ、Ｒｕ、Ｐｔ、Ｉｒ、Ｒｈ これら成分は金合金細線の高温強度を向上させる成分で
あるが、その含有量が１ｗｔ．ｐｐｍ未満では所望の効
果が得られず、一方、１００００ｗｔ．ｐｐｍを越えて
含有させると、Ｃｕ、Ｐｂ、Ｌｉ、Ｔｉの内の一種また
は二種以上が５００〜１００００ｗｔ．ｐｐｍ含有して
いても、ボンディング時に形成されるボールの真球性が
劣化するので好ましくない。したがってＰｄ、Ｒｕ、Ｐ
ｔ、Ｉｒ、Ｒｈの内の１種または２種以上の含有量を１
〜１００００ｗｔ．ｐｐｍに定めた。Ｃｕ、Ｐｂ、Ｌ
ｉ、Ｔｉの内の一種または二種以上が５００〜１０００
０ｗｔ．ｐｐｍ含有している場合のこれら成分の含有量
の一層好ましい範囲は１０００〜６０００ｗｔ．ｐｐｍ
である。(A) Pd, Ru, Pt, Ir, Rh These components are components for improving the high-temperature strength of the gold alloy fine wire, but the content is 1 wt. If it is less than 1 ppm, the desired effect cannot be obtained, while 10,000 wt. If it is contained in excess of ppm, one, two or more of Cu, Pb, Li, and Ti may be present in an amount of 500 to 10,000 wt. Even if it is contained in ppm, the sphericity of the ball formed at the time of bonding deteriorates, which is not preferable. Therefore, Pd, Ru, P
The content of one or more of t, Ir and Rh is 1
-10,000 wt. ppm. Cu, Pb, L
One or more of i and Ti are 500 to 1000
0 wt. The more preferable range of the content of these components when they are contained is 1000 to 6000 wt. ppm
It is.

【０００８】（ｂ）Ｓｉ、Ａｇこれら成分は金合金細線
のボンディング時に形成されるループの安定性を向上 させる成分であるが、その含有量が０．２ｗｔ．ｐｐｍ
未満では所望の効果が得られず、一方、１００ｗｔ．ｐ
ｐｍを越えて含有させると、接合性が劣化するので好ま
しくない。したがってＳｉ、Ａｇの内の１種または２種
の含有量を０．２〜１００ｗｔ．ｐｐｍに定めた。これ
ら成分の含有量の一層好ましい範囲は１０〜５０ｗｔ．
ｐｐｍである。(B) Si, Ag These components are components that improve the stability of a loop formed at the time of bonding of a gold alloy thin wire. ppm
If it is less than 100%, the desired effect cannot be obtained. p
When the content exceeds pm, the bonding property is undesirably deteriorated. Therefore, the content of one or two of Si and Ag is set to 0.2 to 100 wt. ppm. A more preferred range for the content of these components is 10 to 50 wt.
ppm.

【０００９】（ｃ）希土類元素 希土類元素は金合金細線の高温強度を向上させる成分で
あるが、その含有量が０．２ｗｔ．ｐｐｍ未満では所望
の効果が得られず、一方、１００ｗｔ．ｐｐｍを越えて
含有させると、ボンディング時に形成されるボールの真
球性を劣化させるので好ましくない。したがって希土類
元素の内の１種または２種以上の含有量を０．２〜１０
０ｗｔ．ｐｐｍに定めた。これら成分の含有量の一層好
ましい範囲は１〜５０ｗｔ．ｐｐｍである。(C) Rare earth element The rare earth element is a component for improving the high-temperature strength of the gold alloy fine wire. If it is less than ppm, the desired effect cannot be obtained, while 100 wt. If the content exceeds ppm, the sphericity of the ball formed at the time of bonding is deteriorated, which is not preferable. Therefore, the content of one or more of the rare earth elements is set to 0.2 to 10
0 wt. ppm. A more preferable range of the content of these components is 1 to 50 wt. ppm.

【００１０】（ｄ）Ｃｕ、Ｐｂ、Ｌｉ、Ｔｉ これら成分は、ボンディング時に形成されるボールの真
球性を向上させる成分であるが、それらの含有量が５０
０ｗｔ．ｐｐｍ未満では、Ｐｄ、Ｒｕ、Ｐｔ、Ｉｒ、Ｒ
ｈの内の一種または二種以上が５０００ｗｔ．ｐｐｍを
越えて含有する金合金細線のボンディング時のボールの
真球性向上効果が低下し、一方、１００００ｗｔ．ｐｐ
ｍを越えて含有させてと接合性が劣化するようになるの
で好ましくない。したがってＣｕ、Ｐｂ、Ｌｉ、Ｔｉの
内の１種または２種以上の含有量を５００〜１００００
ｗｔ．ｐｐｍに定めた。これら成分の含有量の一層好ま
しい範囲は１０００〜６０００ｗｔ．ｐｐｍである。(D) Cu, Pb, Li, Ti These components are components that improve the sphericity of the ball formed at the time of bonding.
0 wt. Below ppm, Pd, Ru, Pt, Ir, R
h or at least 5000 wt. ppm, the effect of improving the sphericity of the ball when bonding a fine gold alloy wire is reduced. pp
When the content exceeds m, the bonding property is deteriorated, which is not preferable. Therefore, the content of one or more of Cu, Pb, Li, and Ti is adjusted to 500 to 10,000.
wt. ppm. A more preferable range of the content of these components is 1000 to 6000 wt. ppm.

【００１１】[0011]

【発明の実施の形態】通常の真空溶解炉により表１〜表
２に示される成分組成に調整されたＡｕ合金を溶解し、
得られたＡｕ合金溶湯を鋳造し、直径：５５ｍｍ、長
さ：１５０ｍｍのビレットを作製した。これらのビレッ
トを溝ロール、単頭伸線機により直径：８ｍｍに減面
し、その後、連続伸線機により直径：２５μｍの極細線
とした。さらに最終処理として、環状炉において、温度
およびスピードを調整の上、引張り破断試験機で伸びが
４％となるような焼鈍を行ない、本発明Ａｕ合金細線１
〜７および比較Ａｕ合金細線１〜１０を作製した。BEST MODE FOR CARRYING OUT THE INVENTION An Au alloy adjusted to the component composition shown in Tables 1 and 2 is melted by a normal vacuum melting furnace,
The obtained molten Au alloy was cast to produce a billet having a diameter of 55 mm and a length of 150 mm. These billets were reduced to a diameter of 8 mm by a groove roll and a single-head drawing machine, and then formed into a fine wire having a diameter of 25 μm by a continuous drawing machine. Further, as a final treatment, in a ring furnace, after adjusting the temperature and speed, annealing was performed by a tensile breaking tester so that the elongation was 4%.
To 7 and comparative Au alloy fine wires 1 to 10 were produced.

【００１２】ついで、本発明Ａｕ合金細線１〜７および
比較Ａｕ合金細線１〜１０について、それぞれ下記に示
す試験を行い、各種特性の評価を行い、その結果を表１
〜表２に示した。Next, the following tests were performed on the Au alloy fine wires 1 to 7 of the present invention and the comparative Au alloy fine wires 1 to 10 to evaluate various characteristics, and the results are shown in Table 1.
~ Shown in Table 2.

【００１３】高温強度試験 前記本発明Ａｕ合金細線１〜７および比較Ａｕ合金細線
１〜１０を２５０℃で引っ張り試験し、切断強度を測定
した。High Temperature Strength Test The Au alloy fine wires 1 to 7 of the present invention and the comparative Au alloy fine wires 1 to 10 were subjected to a tensile test at 250 ° C. to measure the cutting strength.

【００１４】ボールの真球性試験 本発明Ａｕ合金細線１〜７および比較Ａｕ合金細線１〜
１０の一端を加熱して、図１に示されるようにボールア
ップし、ボールの長軸および短軸の大きさを測定し、そ
の差を絶対値として求めた。Test of sphericity of ball Au alloy thin wires 1 to 7 of the present invention and comparative Au alloy thin wires 1 to 7
One end of 10 was heated, the ball was raised as shown in FIG. 1, the lengths of the long axis and short axis of the ball were measured, and the difference was obtained as an absolute value.

【００１５】接合性試験 本発明Ａｕ合金細線１〜７および比較Ａｕ合金細線１〜
１０を大気中でボールアップし、２００℃でＳｉ基板の
Ａｌ上の第１接合点にボンディングしたのち５．５ｍｍ
離れた第２接合点にボンディングしてループを形成し、
５０本中、１本でも接合しないものがあった場合を×、
すべて接合した場合を○として示した。Bondability test Au alloy thin wires 1 to 7 of the present invention and comparative Au alloy thin wires 1 to 7
10 is ball-up in the air, bonded at 200 ° C. to the first junction on Al of the Si substrate, and then 5.5 mm in diameter.
Forming a loop by bonding to a distant second junction,
×, if any one of 50 pieces did not join
The case where all were joined was shown as (circle).

【００１６】ループの安定性試験 本発明Ａｕ合金細線１〜７および比較Ａｕ合金細線１〜
１０を第１接合点Ａにボンディングしたのち５．５ｍｍ
離れた第２接合点Ｂにボンディングしてループを形成
し、図２に示されるように、第１接合点Ａと第２接合点
Ｂを結ぶ中心線からの曲り量（μｍ）の最大値を測定し
た。Loop stability test Au alloy thin wires 1 to 7 of the present invention and comparative Au alloy thin wires 1 to 7
5.5 mm after bonding No. 10 to the first junction A
A loop is formed by bonding to the distant second junction B, and as shown in FIG. 2, the maximum value of the amount of bending (μm) from the center line connecting the first junction A and the second junction B is determined. It was measured.

【００１７】耐樹脂流れ性試験本発明Ａｕ合金細線１〜
７および比較Ａｕ合金細線１〜１０のループの安定性 試験で得られた５．５ｍｍのループを１７０℃にてモー
ルディングし、図２に示されるように、第１接合点Ａと
第２接合点Ｂを結ぶ中心線からの樹脂流れによる曲り量
（μｍ）の最大値を測定した。Resin flow resistance test
7 and the loop stability of the comparative Au alloy fine wires 1 to 10 The 5.5 mm loop obtained in the test was molded at 170 ° C., and as shown in FIG. The maximum value of the bending amount (μm) due to the resin flow from the center line connecting B was measured.

【００１８】[0018]

【表１】 [Table 1]

【００１９】[0019]

【表２】 [Table 2]

【００２０】[0020]

【発明の効果】表１〜表２に示された結果から、本発明
Ａｕ合金細線１〜７はおよび比較Ａｕ合金細線１〜１０
に比べて、高温強度はほぼ同等であるが、ボールの真球
性が優れており、さらに、接合性、ループの安定性、耐
樹脂流れ性にも優れていることが分かる。上述のよう
に、この発明の金合金細線は、従来よりも信頼性のある
ボンディングを行うことができ、半導体装置産業の発展
に大いに貢献し得るものである。From the results shown in Tables 1 and 2, the Au alloy fine wires 1 to 7 of the present invention and the comparative Au alloy fine wires 1 to 10
It can be seen that the high-temperature strength is almost the same as that of, but the sphericity of the ball is excellent, and the bonding property, loop stability and resin flow resistance are also excellent. As described above, the gold alloy thin wire of the present invention can perform more reliable bonding than before, and can greatly contribute to the development of the semiconductor device industry.

【図面の簡単な説明】[Brief description of the drawings]

【図１】ボールの真球性試験において、ボールアップし
たボールの長軸および短軸を示す説明図である。FIG. 1 is an explanatory diagram showing a long axis and a short axis of a ball that has been raised in a sphericity test of the ball.

【図２】ループの安定性試験および耐樹脂流れ試験にお
いて測定する曲り量の説明図である。FIG. 2 is an explanatory diagram of a bending amount measured in a loop stability test and a resin flow resistance test.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平８−199261（ＪＰ，Ａ) 特開 平９−198917（ＪＰ，Ａ) 特開 平２−119148（ＪＰ，Ａ) 特開 平２−251155（ＪＰ，Ａ) 特開 平３−257129（ＪＰ，Ａ) 特開 平２−249244（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C22C 5/02 H01L 21/60 ────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-8-199261 (JP, A) JP-A-9-198917 (JP, A) JP-A-2-119148 (JP, A) JP-A-2-199 251155 (JP, A) JP-A-3-257129 (JP, A) JP-A-2-249244 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) C22C 5/02 H01L 21 / 60

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 Ｐｄ、Ｒｕ、Ｐｔ、Ｉｒ、Ｒｈの内の一
種または二種以上：１〜１００００ｗｔ．ｐｐｍ、Ｓｉ、Ａｇの内の一種または二種 ：０．２〜１００ｗ
ｔ．ｐｐｍ、 希土類元素の内の一種または二種以上：０．２〜１００
ｗｔ．ｐｐｍ、 Ｃｕ、Ｐｂ、Ｌｉ、Ｔｉの内の一種または二種以上：５
００〜１００００ｗｔ．ｐｐｍ、 を含有し、残りがＡｕおよび不可避不純物からなる組成
を有することを特徴とする半導体装置用金合金細線。1. One or more of Pd, Ru, Pt, Ir, and Rh: 1 to 10,000 wt. ppm, one or two of Si and Ag : 0.2 to 100 w
t. ppm, one or more of the rare earth elements: 0.2 to 100
wt. ppm, one or more of Cu, Pb, Li, and Ti: 5
00 to 10000 wt. and a balance of Au and inevitable impurities.
JP12856896A 1996-05-23 1996-05-23 Gold alloy wires for semiconductor devices Expired - Fee Related JP3291679B2 (en)

Priority Applications (1)

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JP12856896A JP3291679B2 (en) 1996-05-23 1996-05-23 Gold alloy wires for semiconductor devices

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Application Number Priority Date Filing Date Title
JP12856896A JP3291679B2 (en) 1996-05-23 1996-05-23 Gold alloy wires for semiconductor devices

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JPH09316567A JPH09316567A (en) 1997-12-09
JP3291679B2 true JP3291679B2 (en) 2002-06-10

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW518637B (en) 1999-04-15 2003-01-21 Semiconductor Energy Lab Electro-optical device and electronic equipment
EP2256808A2 (en) 1999-04-30 2010-12-01 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method therof
JP5166738B2 (en) 2006-03-24 2013-03-21 新日鉄住金マテリアルズ株式会社 Gold wire for semiconductor element connection

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