JP3283838B2 - Electronic component, manufacturing method, and wireless terminal device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates are used in electronic devices such as mobile communications, and in particular an electronic component及beauty no line terminal device suitably used for a high frequency circuit or the like. In particular, an inductance element in which a conductive film is provided on an insulating substrate.
It relates child及 beauty wireless terminal.

[0002]

2. Description of the Related Art FIG. 14 is a side view showing a conventional inductance element. In FIG. 14, reference numeral 1 denotes a square or cylindrical base, 2 denotes a conductive film formed on the base 1, 3 denotes a groove provided in the conductive film 2, and 4 denotes a stacked layer on the conductive film 3. Protected material.

[0003] Such electronic components are adjusted to predetermined characteristics by adjusting the interval between the grooves 3 and the like.

A prior example is disclosed in Japanese Patent Application Laid-Open No. 7-307201.
JP, JP-A-7-297033, JP-A-5-1
JP-A-29133, JP-A-1-238003, JP-A-57-117636, JP-A-5-29925
No. 0, Japanese Unexamined Patent Publication No. 7-297033, and the like.

[0005]

However, as the size of the device is further reduced, the problem of the device standing phenomenon (Manhattan phenomenon) and the problem of productivity arise.

[0006] The present invention is intended to solve the conventional problems described above, or productivity is good, providing at least one electronic component及beauty no line terminal device capable of realizing suppression of the occurrence of the element falling phenomenon Aim.

[0007]

According to the present invention , a conductive film is formed on the entire surface of a base having a rectangular parallelepiped with a substantially square bottom, and a groove is formed in the conductive film. when the terminal unit <br/> is formed, a protective material which is constituted by an electrodeposition film so as to cover the groove is provided, the length L1, a width L2, and the height L3 to, L1 = 0.5 to 1 .1 mm L2 = 0.2 to 0.6 mm L3 = 0.2 to 0.6 mm
1 and P2 are each 1.5 to 7 times the thickness of the conductive film,
Furthermore provided a part of the terminal portion on the protective member, further the end of the base
The surface of the conductive film provided on the surface is almost
Table of conductive film to be matched or provided on the end face of base
Keep the edge of the protective material slightly inward with respect to the surface.
Protective materials were provided .

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 is directed to the entire surface of a base in which a rectangular parallelepiped having a substantially square bottom surface is chamfered.
Provided electroconductive film, the groove is provided on the conductive film, setting a pair of terminal portions attached to the end face of the base so as to sandwich the base
Only, the conductive provided a protective constituted by provided electrodeposition film material onto the film, when the length L1, width L2, the height L3, L1 = 0.5~1.1mm L2 = 0 . 2 to 0.6 mm L3 = 0.2 to 0.6 mm, the thickness of the terminal portion is 1.5 to 7 times thicker than the thickness of the conductive film, and a part of the terminal portion. Is provided on the protective material formed on the side surface of the base, and the surface of the conductive film provided on the end surface of the base.
Make the ends of the protective material substantially coincide with each other or
Of the protective material with respect to the surface of the conductive film provided on the end face.
Make sure that the protective material is provided so that the end is located
By making the electronic component a feature, it becomes easy to protrude the terminal portion, so that productivity can be improved, occurrence of an element standing phenomenon can be suppressed, and bondability with a circuit board or the like can be improved. . Furthermore, by using a base chamfered into a rectangular parallelepiped with a substantially square bottom surface, the rolling of the element can be suppressed with a simple configuration, so that it is very advantageous in terms of cost and the base can be easily manufactured. As a result, the productivity is improved, and the mountability is also improved. Furthermore,
By defining the size of the electronic component, it is possible to configure a circuit board that is small and hard to cause element breakage or the like, has excellent mountability, and is very small. Further, by forming the protective material from the electrodeposited film, it is possible to protect the element thinly and surely, and moreover, it is possible to form the protective material on many elements at once, thereby improving the productivity.

[0009]

According to a second aspect of the present invention, in each of the first and second aspects, each of the terminal portions has a thickness P1 and P2 of 30 μm to 1 μm.
By setting the thickness to 40 μm, the occurrence of an element standing phenomenon can be suppressed.

[0011]

According to a third aspect of the present invention, in the first aspect , the protrusions P3 and P4 of the terminal portions from the surface of the protective material are each set to 20 μm to 120 μm, thereby further suppressing the element standing phenomenon. In addition, the bondability with a circuit board or the like can be improved.

According to a fourth aspect of the present invention, in the first aspect, the lengths P5 and P6 of the terminal portions exposed on the side surfaces of the base are set to 30 μm to 100 μm, respectively, thereby further suppressing the phenomenon of standing up of the element. It is possible to improve the bonding property with a circuit board or the like.

According to a fifth aspect of the present invention, in the first to fourth aspects, the terminal portion is formed by laminating a terminal film on a conductive film, so that the terminal portion can be easily projected with a simple configuration. As a result, the productivity can be improved and the phenomenon of standing up of the element can be suppressed.

According to a sixth aspect of the present invention, in the fifth aspect , at least one of a corrosion-resistant film and a bonding film is provided on the terminal film so that the corrosion resistance can be improved. Performance can be improved.

[0016]

[0017]

[0018]

[0019] According to a seventh aspect, our in claims 1-6
In addition, since all or at least a part of the terminal portion is formed by the plating method, a desired amount of protrusion can be easily secured by adjusting a film forming time and the like, so that productivity is improved.

[0020]

[0021]

According to an eighth aspect of the present invention, in accordance with the first to seventh aspects, by forming an inductance component by using the conductive film and the groove, it is possible to provide an inductance element having a simple structure and in which the element is unlikely to stand up.

[0023]

[0024]

According to a ninth aspect of the present invention, there is provided a display unit, a conversion unit for converting at least one of a data signal and a voice signal into a transmission signal or a reception signal into at least one of a data signal and a voice signal, An antenna for transmitting and receiving a signal and the reception signal, and a control unit for controlling each unit, wherein at least one of a transmission circuit, a filter circuit, an antenna unit, a peripheral circuit of a matching circuit with each stage, and the like are provided. By using the electronic component according to any one of claims 1 to 8, an electronic component capable of suppressing the element standing phenomenon is mounted. Therefore, the defect rate is extremely reduced, and the productivity is improved. A small device can be obtained.

Hereinafter, embodiments of an electronic component, a manufacturing method, and a wireless terminal device according to the present invention will be specifically described with reference to an inductance element as an example.

FIGS. 1 and 2 are a perspective view and a side sectional view showing an inductance element as an example of an electronic component according to an embodiment of the present invention.

In FIG. 1, reference numeral 11 denotes a base which is formed by subjecting an insulating material or the like to press working, extrusion, or the like.
Reference numeral 2 denotes a conductive film provided on the base 11.
2 is formed on the base 11 by an evaporation method such as a plating method or a sputtering method.

Reference numeral 13 denotes a groove provided in the base 11 and the conductive film 12. The groove 13 is formed by irradiating the conductive film 12 with a laser beam or the like, or mechanically by applying a grindstone or the like to the conductive film 12. Or by selective etching using a resist or the like.

Reference numeral 14 denotes a protective material applied to a portion of the base 11 and the conductive film 12 where the groove 13 is provided. Reference numerals 15 and 16 denote terminals respectively attached on the end face of the base 11 (preferably only on the end face). The base 11 is sandwiched between the terminal 15 and the terminal 16. That is, the base 1
1 is connected to the bases 11 and 16
Of the base 11 and the terminal portions 15 and 16
Is basically non-contact.

The inductance element according to the present embodiment has a practical frequency band of 1 to 6 GHz, corresponding to a high frequency range, and has a very high Q value (35 or more).
Length L1, width L2, height L3 of the inductance element
Is preferably as follows.

L1 = 0.5-1.1 mm (preferably 0.6-1.0 mm) L2 = 0.2-0.6 mm (preferably 0.3-0.5 mm)
mm) L3 = 0.2 to 0.6 mm (preferably 0.3 to 0.5 mm)
(Note that the dimensional error of each of L1, L2, and L3 is 0.3 mm.)
It is preferably equal to or less than 02 mm. If L1 is less than 0.5 mm, the required inductance cannot be obtained. L1 is 1.1 mm
If it exceeds the limit, the element itself becomes large, and it is not possible to reduce the size of a circuit board or the like on which an electronic circuit or the like is formed (hereinafter abbreviated as a circuit board or the like). Equipment cannot be miniaturized. If each of L2 and L3 is 0.2 mm or less, the mechanical strength of the element itself becomes too weak, and the element may break when mounted on a circuit board or the like by a mounting apparatus or the like. is there. L2 and L3 are 0.6 m
If m is larger than m, the elements become too large, and it is not possible to reduce the size of the circuit board and the like and, consequently, the device.

With respect to the inductance element configured as described above, each part will be described in detail below.

First, the shape of the base 11 will be described.
The base 11 is preferably formed in a prismatic or cylindrical shape. By forming the base 11 in a prismatic shape as shown in FIGS. 1 and 2, the mountability can be improved, and the rolling of the element can be prevented. And the like. In addition, among the rectangular bases, the base 11 is particularly preferably formed in a square pillar shape, which greatly facilitates the mounting and the positioning of the element on the circuit board. In addition, it is more preferable that the bottom surface is a rectangular parallelepiped having a square shape, so that the mountability and the like can be further improved. Furthermore, base 1
Since the structure is made very simple by making 1 a prismatic shape, productivity is good and cost is very advantageous.

When the base 11 is formed in a cylindrical shape, a conductive film 12 is formed on the base 11 as described later, and when a groove is formed in the conductive film 12 by laser processing or the like, the The depth of the groove and the like can be formed with high accuracy, and variations in characteristics can be suppressed.

Next, chamfering of the base 11 will be described with reference to FIG. FIG. 3 is a perspective view of a base used for an inductance element as an example of an electronic component according to an embodiment of the present invention.

The corners 11b and 11c of the base 11 are chamfered, and the radius of curvature R1 of the chamfered corners 11b and 11c and the radius of curvature R2 of the corner 11a.
Is preferably formed as follows.

0.03 <R1 <0.15 (mm) 0.01 <R2 (mm) If R1 is 0.03 mm or less, the corner portions 11b and 11c
Because of the sharp point, the corners 11b and 11c may be chipped by a slight impact or the like, and the chipping may cause deterioration of characteristics or the like. When R1 is 0.15 mm or more, the corner 11
Since b and 11c are too round, the above-mentioned Manhattan phenomenon is likely to occur, which causes a problem. Furthermore, when R2 is 0.
When the thickness is less than or equal to 01 mm, burrs and the like are likely to occur at the corners 11a, and the thickness of the conductive film 12, which largely affects the characteristics of the element, may be significantly different between the corners 11f and the flat portion,
Variation in element characteristics increases.

Next, the constituent materials of the base 11 will be described. It is preferable to satisfy the following characteristics as a constituent material of the base 11.

Volume resistivity: 10 ¹³ Ωm or more (preferably 10 ¹⁴ Ωm or more) Thermal expansion coefficient: 5 × 10 ⁻⁴ / ° C. or less (preferably 2 × 10
⁻⁵ / ° C. or less) [Coefficient of thermal expansion at 20 ° C. to 500 ° C.] Relative permittivity: 12 or less at 1 MHz (preferably 10
Bending strength: 1300 kg / cm ² or more (preferably 20
Density: ^{2 to 5} g / cm ³ (preferably ³ to 4 g / cm ³ ) When the constituent material of the base 11 has a volume resistivity of 10 ¹³ Ωm or less, the conductive material 12 and the base 11 Also, a current starts to flow in a predetermined manner, so that a parallel circuit is formed, and the self-resonant frequency f0 and the Q value decrease, which is not suitable for a high-frequency element.

If the coefficient of thermal expansion is 5 × 10 ⁻⁴ / ° C. or more, cracks may occur in the base 11 due to heat shock or the like. That is, when the thermal expansion coefficient is 5 × 10 ⁻⁴ / ° C. or more, the base 11 is locally heated to a high temperature because a laser beam or a grindstone is used when forming the groove 13 as described above. Although cracks and the like may occur in 11, the occurrence of cracks and the like can be greatly suppressed by having the above-described coefficient of thermal expansion.

If the dielectric constant is 12 or more at 1 MHz, the self-resonant frequency f0 and the Q value become low, which is not suitable for a high-frequency device.

If the bending strength is 1300 kg / cm ² or less, the device may be broken when mounted on a circuit board or the like by a mounting apparatus.

When the density is 2 g / cm ³ or less, the base 1
1, the water absorption rate is increased, the characteristics of the base 11 are significantly deteriorated, and the characteristics as an element are deteriorated. The density is 5 g / c
If it exceeds m ³ , the weight of the base will be heavy, and there will be a problem in mountability and the like. In particular, when the density is set within the above range, the water absorption rate is small, water hardly enters the base 11, the weight is reduced, and no problem occurs when mounting on a substrate by a chip mounter or the like.

By defining the volume resistivity, the coefficient of thermal expansion, the dielectric constant, the bending strength, and the density of the base 11 in this manner, the self-resonant frequency f0 and Q do not decrease, so that the base 11 can be used as a high-frequency element. It is possible to suppress the occurrence of cracks or the like in the base 11 due to heat shock or the like, so that the defective rate can be reduced, and furthermore, the mechanical strength can be improved. Since it can be mounted on a circuit board or the like, excellent effects such as improvement in productivity can be obtained.

As a material for obtaining the above-mentioned various properties, a ceramic material containing alumina as a main component can be mentioned. However, simply using a ceramic material mainly composed of alumina cannot obtain the above-mentioned characteristics. That is,
Since the above-mentioned various characteristics vary depending on the pressing pressure, the sintering temperature, and the additives at the time of producing the base 11, the production conditions and the like must be appropriately adjusted. Specific manufacturing conditions include a pressing pressure of 2 to 5 tons when processing the base 11, a firing temperature of 1500 to 1600 ° C., and a firing time of 1 to 3 hours. Specific examples of the alumina material include Al ₂ O ₃ of 92 wt% or more, SiO ₂ of 6 wt% or less, MgO of 1.5 wt% or less, and Fe ₂ O ₃ of 0.1 wt% or less.
% Or less, and Na ₂ O of 0.3% by weight or less.

The base 11 may be made of a magnetic material such as ferrite. When the base 11 is made of a magnetic material such as ferrite, an element having high inductance (about 18 nH to 50 nH) can be formed.

Next, the surface roughness of the base 11 will be described. The surface roughness described below means the average roughness of the center line, and the roughness described in the description of the conductive film 12 is also the average roughness of the center line.

The surface roughness of the base 11 is 0.15 to 0.5 μm
m, preferably about 0.2 to 0.3 μm. FIG. 4 is a graph showing the surface roughness of the base 11 and the rate of occurrence of peeling. FIG. 4 shows the results of an experiment as described below. The base 11 and the conductive film 12 were made of alumina and copper, respectively, and samples with various surface roughnesses of the base 11 were prepared, and the conductive film 12 was formed on each sample under the same conditions. Each sample was subjected to ultrasonic cleaning, and thereafter, the surface of the conductive film 12 was observed to determine whether or not the conductive film 12 was peeled. The surface roughness of the base 11 was measured using a surface roughness measuring device (574A, manufactured by Tokyo Seimitsu Surfcom).
The one having a tip R of 5 μm was used. As can be seen from this result, if the average surface roughness is 0.15 μm or less,
The rate of occurrence of peeling of the conductive film 12 formed thereon is about 5%, and good bonding strength between the base 11 and the conductive film 12 can be obtained. Further, if the surface roughness is 0.2 μm or more, peeling of the conductive film 12 hardly occurs. Therefore, if possible, the surface roughness of the base 11 is preferably 0.2 μm or more. Since the peeling of the conductive film 12 is a major factor in deterioration of the characteristics of the element, the rate of occurrence is 5% in terms of yield and the like.
The following is preferred.

FIG. 5 is a graph showing the relationship between the frequency and the Q value with respect to the surface roughness of the base used for the inductance element according to one embodiment of the present invention. FIG. 5 shows the results of the following experiment. First, each sample of the base 11 having a surface roughness of 0.1 μm or less, the base 11 having a surface roughness of 0.2 to 0.3 μm, and the base 11 having a surface roughness of 0.5 μm or more was prepared. Then, a conductive film having the same thickness and the same material (copper) was formed on each sample. Then, in each sample, the Q value at a predetermined frequency F was measured. As can be seen from FIG. 5, the surface roughness of the base 11 is 0.5 μm.
If it is more than m, a decrease in the Q value, which is considered to be caused by the deterioration of the film structure of the conductive film 12, is observed. Particularly in the high frequency region, the Q value is significantly deteriorated. Also, the self-resonant frequency f0 (maximum value of each line) has a surface roughness of 0.5
Those of μm are shifted to the lower frequency side. Therefore, the surface roughness of the base 11 is preferably 0.5 μm or less from the viewpoint of the Q value and the surface of the self-resonant frequency f0.

As described above, judging from the results of both the adhesion strength between the conductive film 12 and the base 11, the Q value of the conductive film, and the self-resonance frequency f0, the surface roughness of the base 11 is 0.15.
μm to 0.5 μm, more preferably 0.2 μm
０．３0.3 μm is good.

In this embodiment, the bonding strength between the conductive film 12 and the base 11 is improved by adjusting the surface roughness of the base 11.
2 to improve the adhesion strength between the conductive film 12 and the base 11 without adjusting the surface roughness by providing an intermediate layer composed of Cr alone or an alloy of Cr and another metal. Can be. Of course, when the surface roughness of the base 11 is adjusted and the intermediate layer and the conductive film 12 are laminated on the base 11, it is possible to obtain a stronger adhesion strength between the conductive film 12 and the base 11. it can.

Next, the conductive film 12 will be described. The conductive film 12 has a Q value of 35 or more for a high-frequency signal of 800 MHz or more, and has a self-resonant frequency of 1 to 6
A frequency of about GHz is preferable. Conductive film 1 having such characteristics
In order to obtain 2, it is necessary to select a material and a manufacturing method.

Hereinafter, the conductive film 12 will be specifically described. Examples of a constituent material of the conductive film 12 include conductive materials such as copper, silver, gold, and nickel. A predetermined element may be added to the material such as copper, silver, gold, and nickel to improve weather resistance and the like. Alternatively, an alloy such as a conductive material and a nonmetallic material may be used. Copper and its alloys are often used as constituent materials in terms of cost, corrosion resistance, and ease of fabrication. When copper or the like is used as the material of the conductive film 12, first, a base film is formed on the base 11 by electroless plating, and a predetermined copper film is formed on the base film by electrolytic plating. The conductive film 12 is formed. Further, when the conductive film 12 is formed of an alloy or the like, it is preferable to form the conductive film 12 by a sputtering method or a vapor deposition method.

Further, as in the present embodiment, when the conductive film 12 is made of, for example, copper or the like and the film thickness is increased to suppress self-heating, the width K1 of the groove 13 formed in the conductive film 12 is reduced. The width K2 of the conductive film 12 between the grooves 13 preferably has the following relationship.

20 μm>K1> 15 μm 200 μm>K2> 100 μm In particular, as described above, the length L1, width L2, and height L3 are L1 = 0.5 to 2.1 mm (preferably 0.6 to 1.6).
mm) L2 = 0.2 to 1.5 mm (preferably 0.3 to 0.8)
mm) L3 = 0.2 to 1.5 mm (preferably 0.3 to 0.8)
(Note that the dimensional error of each of L1, L2, and L3 is 0.3 mm.)
It is preferably equal to or less than 02 mm. In the case of the inductance element described in (1), by setting the above K1 and K2 within the above ranges, the electric resistance can be reduced and the groove 13 formed in the conductive film 12 can be formed with high accuracy. In addition, when the thickness of the conductive film 12 is further increased, the groove 13 can be surely formed.

The conductive film 12 may be composed of a single layer, but may have a multilayer structure. That is, a plurality of conductive films having different constituent materials may be stacked. For example, first, a copper film is formed on the base 11, and then a metal film having good weather resistance (such as nickel) is laminated thereon, so that corrosion of copper, which is somewhat problematic in weather resistance, can be prevented. .

Examples of the method for forming the conductive film 12 include a plating method (such as an electrolytic plating method and an electroless plating method), a sputtering method, and a vapor deposition method. Among these forming methods,
A plating method with good mass productivity and small variations in film thickness is often used.

The surface roughness of the conductive film 12 is preferably 1 μm or less, more preferably 0.2 μm or less. When the surface roughness of the conductive film 12 exceeds 1 μm, the Q value at high frequencies decreases due to the skin effect. FIG. 6 is a graph showing the relationship between the frequency and the Q value with respect to the surface roughness of a conductive film used as an example of an electronic component according to an embodiment of the present invention. FIG. 6 was derived through the following experiment. First, a conductive film 12 made of copper is formed on a base 11 having the same size and the same material with the same surface roughness while changing the surface roughness. Was measured. As can be seen from FIG. 6, when the surface roughness of the conductive film 12 is 1 μm or more, the Q value in the high frequency region is low. Further, it can be seen that when the surface roughness of the conductive film 12 is 0.2 μm or less, the Q value particularly in a high frequency region is extremely high.

As described above, the surface roughness of the conductive film 12 is 1.
The thickness is preferably 0 μm or less, and more preferably 0.2 μm or less, the skin effect of the conductive film 12 can be reduced, and the Q value particularly at high frequencies can be improved.

Further, the adhesion strength between the conductive film 12 and the base 11 is as follows:
After leaving the base 11 on which the conductive film 12 is formed at a temperature of 400 ° C. for a few seconds, it is preferable that the conductive film 12 be separated from the base 11 by a degree or more. When the element is mounted on a substrate or the like, a temperature of 200 ° C. or more may be applied to the element due to self-heating or heat from other members. Therefore, the conductive film 12 from the base 11 at 400 ° C.
If the adhesion strength is such that no peeling occurs, even if heat is applied to the element, the characteristics of the element do not deteriorate.

Next, the protective member 14 will be described. As the protective material 14, an organic material having excellent weather resistance, for example, an insulating material such as an epoxy resin or an electrodeposition film is used.
Further, it is preferable that the protective material 14 has a transparency such that the condition of the groove 13 can be observed. Further protective material 14
It is preferable to have a predetermined color while maintaining transparency. By coloring the protective material 14 with a color such as red, blue, or green, which is different from the conductive film 12 and the terminal portions 15 and 16, it is possible to distinguish each element portion, and to easily inspect each element portion. . In addition, by changing the color of the protective material 14 depending on the size, characteristics, product number, and the like of the element, it is possible to reduce errors such as mounting an element having a different characteristic, product number, and the like on an erroneous portion.

In particular, when the protective member 14 is formed of an electrodeposited film, the protective member 14 is very thin, can secure insulation properties, and can have improved heat resistance. That is, when the method of applying an epoxy resin, a resist, or the like is applied, a portion of the protective material 14 rises greatly, and when mounted on a circuit board or the like, a gap may be generated between the terminal portion of the element and the wiring of the circuit board. In some cases, sufficient electrical bonding cannot be performed. However, by forming the protective material 14 with an electrodeposition film, a thin and uniform protective material 14 can be formed. In addition, the gap between the terminal portion and the wiring becomes very small, and the electrical connection between the wiring and the terminal of the substrate can be sufficiently performed.

Further, in the method of applying a resist or the like, each element must be applied using a tape or the like, so that the number of steps is increased, productivity is not improved, and manufacturing cost is reduced. Although it is not possible, as in the present embodiment, by forming the protective material 14 with an electrodeposition film, the protective material 14 can be provided to many elements at once, so that productivity is improved and cost is reduced. Can be done.

As a specific constituent material of the protective material 14, an electrodeposition resin film made of at least one of a resin material such as an acrylic resin, an epoxy resin, a fluorine resin, a urethane resin, and a polyimide resin is used. It is configured. In the case where the protective material 14 is formed of an electrodeposited film, and when either the cation type or the anion type is selected, the constituent material of the conductive film 12, the constituent material of the electrodeposited film, and the usage of the inductance element are used. It is preferable to determine in consideration of the above. The protective material 14 may be formed by laminating electrodeposited films made of different materials, or may be formed by laminating the same material. Further, a plurality of electrodeposited films may be arranged in parallel on the groove 13. It may be provided.

When the protective material 14 is formed of an electrodeposition film, it is preferable that the protective material 14 has a thickness of several tens of microns and a withstand voltage of 20 V or more, and has a melting point of 183 ° C., which is the melting point of solder.
It is preferable to use a material having characteristics of not burning or evaporating. In the case where the protective material 14 is softened at 183 ° C., no problem occurs.

As shown in FIG. 7A, it is preferable that the protective material 14 made of an electrodeposition film be provided so as to cover both the conductive film 12 and at least a part of the base 11. By providing the protective material 14 in this manner, the conductive film 12 can be substantially covered, and the probability of contact between the conductive film 12 and outside air can be extremely reduced.
2 can be prevented, current leakage, and the like can be prevented. FIG.
In the case where the protective material 14 is provided only on the conductive film 12 as shown in (b), there is a high possibility that the corner 12z of the conductive film 12 is exposed, which may cause corrosion of the conductive film 12.

Therefore, as shown in FIG.
By forming the second corner 12z so as to cover at least a part of the base 11 with the protective material 14, reliable protection of the conductive film 12 can be covered.

Further, as shown in FIG. 7A, a part 14 of the protective material 14 formed on the outer corner 12p of the conductive film 12 is formed.
It is preferable that z is thicker than other portions. By increasing the thickness of the portion 14z, it is possible to prevent the corner portion 12p from being discharged with other portions, and to prevent deterioration of characteristics as an inductance element.

In some cases, it is important for an inductance element used for a special purpose to have an adhesion strength between the conductive film 12 and the protective material. In this case, it is preferable to roughen the surface of the conductive film 12 by chemical etching, and to provide a protective material 14 made of an electrodeposition film on the roughened surface. As previously mentioned,
If the surface of the conductive film 12 is roughened, there is a risk of lowering the Q value.
In some cases, it is important to improve the adhesion strength between the conductive film 12 and the conductive film 12.
Must be determined appropriately.

When the conductive film 12 is made of a material containing copper, the protective material 14 serving as an electrodeposition film may be formed with an uneven film thickness. A metal film such as Ni is formed thereon, and a protective material 1 is formed on the metal film.
4 may be formed.

Next, a method for forming the protective member 14 composed of an electrodeposition film will be described. As shown in FIG. 8, reference numeral 100 denotes a container. The container 100 contains a solution 101 obtained by mixing water, an electrodeposition resin, an adjusting agent such as a pH adjusting agent, and other additives. 102 is an electrode plate, 103 is an inductance element, 104 and 105 are holding members, respectively, and the holding members 104 and 105 are provided with holes into which both ends of the inductance element 103 fit. The holding member 105 is provided with an energizing section 106, which is in contact with the inductance element 103.

When a predetermined voltage is applied to the electrode plate 102 and the current-carrying portion 106, an electrodeposition film is formed on portions except for both ends of the inductance element 103. This is because the terminals 15 and 16 of the inductance element 103 are connected to the holding members 104 and 1.
This is because they have entered the liquid crystal 05 and are not in contact with the solution 101 much. In the present embodiment, the holding member 1
Although the terminal portions 15 and 16 are inserted into the terminal portions 04 and 105, another mask member such as a photoresist may be provided on the terminal portions 15 and 16.

As described above, the protective material 1 composed of the electrodeposited film
After manufacturing the inductance element having No. 4, it is preferable to apply heat treatment to the element. By this heat treatment,
The surface of the protection member 14 becomes gentle, the surface roughness becomes small, and the protection member 14 is surely covered. In addition, when heat treatment is performed, the thickness of the protective material 14 at the corners of the conductive film 12 may be reduced. In this case, insulating particles (for example, metal oxide) are added to the solution 101. By mixing and holding the insulating particles in the protective material 14 made of the electrodeposited film, the thickness of the protective material 14 at the corner of the conductive film 12 can be prevented from being reduced.

In this embodiment, the protection member 14
The end of the protective material 14 is configured to substantially coincide with the surface of the conductive film 12 provided on the end surface of the base 11, but the end of the protective material 14 is larger than the surface of the conductive film 12 as shown in FIG. You may comprise so that it may be located a little inside. At this time, it is preferable that the distance P7 between the end portion of the protective material 14 and the surface of the conductive film 12 is 0.1 or less when the total length L1 of the element is 1.

The corners 12 of the conductive film 12 shown in FIG.
The corners 12z can be covered with the protective material 14 by providing the end of the protective material 14 to reach the surface of the protective material 14 provided on the end face 11L of the base 11 so as to protect X. , The corner 12X is not chipped,
Stable characteristics can be obtained.

Next, the terminals 15 and 16 will be described.
As shown in FIG. 2, the terminal portions 15 and 16 have a configuration in which a predetermined conductive material is provided on a conductive film 12 provided on an end surface of the base 11. The thicknesses P1 and P2 of the terminal portions 15 and 16 are set to 1.5 to 7 times the thickness of the conductive film 12, respectively. Thus, the terminal parts 15, 1
By defining the film thickness of 6, the connection between the terminal portions 15 and 16 and the land pattern or the like provided on the circuit board or the like can be ensured, the productivity can be improved, and the device standing phenomenon can be suppressed.

Specific dimensions of the film thicknesses P1, P2 of the terminal portions 15, 16 are 30 μm to 140 μm (particularly preferably 40 μm to 60 μm). Terminal part 15,
If the film thickness of the substrate 16 is 30 μm or less, the amount of protrusion from the end face of the base 11 is small, so that the bonding property with a land pattern of a circuit board or the like may not be good.
When the thickness exceeds 0 μm, the probability of occurrence of the element standing phenomenon increases, and the formation time of the terminal portions 15 and 16 becomes longer.
Productivity decreases.

The terminal portions 15 and 16 are preferably formed by a thin film forming technique such as a plating method or a sputtering method. By forming the terminal portions 15 and 16 by the thin film forming technique, the film thickness can be controlled with relatively high accuracy depending on the conditions at the time of forming the thin film. Particularly, in the case of the present embodiment, since the conductive film 12 is provided on the end surface of the base 11, it is preferable to form the terminal portions 15, 16 by plating. By forming the terminal portions 15 and 16 by plating, a dense and highly crystalline film can be formed, and the productivity is extremely improved.

As shown in FIG. 2, the terminal portions 15 and 16 are configured so that a part thereof is mounted on the protective member 14. That is, the terminal portions 15 and 16 protrude above the vicinity of the end surface of the protective member 14. With such a configuration, the bondability with a circuit board or the like is further improved, the mountability is improved, and the occurrence of an element standing phenomenon can be further suppressed. At this time, the protrusion amounts P3 and P4 from the protective material 14 are 20
μm to 120 μm (preferably 30 μm to 70 μm)
It is preferable that When the protrusion amounts P3 and P4 are 20 μm or less, the bonding property is deteriorated, the mountability is not significantly improved, and the probability that the element standing phenomenon occurs increases.
If it exceeds 20 μm, the time for forming a film is prolonged, and the productivity is deteriorated. The protrusion amounts P3 and P4 indicate the protrusion amounts from the surface near the end face in the surface of the protective material 14. It is preferable that the protruding height of the terminal portions 15 and 16 be higher than the maximum protruding height of the entire protective member 14.

The widths P5 and P6 of the terminal portions 15 and 16 on the side surface of the base 11 are 30 μm to 100 μm, respectively.
It is preferable that If each of P5 and P6 is 30 μm or less, the bondability with a circuit board or the like is not so good.
If it exceeds 100 μm, the occurrence of the element standing phenomenon will increase. By adjusting the width P5 and the width P6 so that P5 / P6 = 0.9 to 1.1, the ratio of the element standing phenomenon can be suppressed.

Next, a specific film structure of the terminal portions 15 and 16 will be described with reference to FIG. First, the terminal film 300 is formed of a conductive material on the conductive film 12 exposed on the end face of the base 11. At this time, it is preferable that the terminal film 300 is made of the same material as that of the conductive film 12, and it is possible to obtain an effect such as improvement in adhesion and resistance to a heat cycle by such a structure. Becomes In addition, by forming the terminal film 300 by a plating method, it is possible to perform accurate film thickness control by adjusting each condition.

In order to improve the weather resistance of the terminal portions 15 and 16, Ti, Ni,
A corrosion resistant film 301 such as a metal film hardly corroded, such as W or Cr, or an alloy film (Ni—Cr, etc.) of such a metal material is formed to a thickness of 2 to 7 mm.
It is preferable that the thickness is set to be μm.

Further, in order to improve the bondability between the terminal portions 15 and 16 and the circuit board or the like, a solder or a lead-free bonding material (A
g, Cu, Zn, Bi, In, or a lead-free solder containing at least one of them).
It may be formed with a thickness of 0 μm.

Here, an example of the configuration of the terminal portions 15 and 16 is summarized as follows: conductive film 12 + terminal film 300 conductive film 12 + terminal film 300 + corrosion resistant film 301 conductive film 12 + terminal film 300 + bonding film 302 conductive film 12+ Terminal film 300 + corrosion resistant film 301 + bonding film 3
02, and the total film thickness of each is adjusted to be 30 μm to 140 μm. From a further viewpoint, as described above, it is preferable that the thickness of the terminal portions 15 and 16 be set between 1.5 times and 7 times the conductive film 12.

Note that the configuration of the terminal portions 15 and 16 is as follows.
A new film may be added to the above configuration.

Further, as shown in FIG. 2, the heights Z1 and Z2 of the terminal portions 15, 16 preferably satisfy the following conditions.

| Z1-Z2 | ≦ 80 μm (preferably 5
0 μm) The height difference between Z1 and Z2 is 80 μm (preferably 50 μm).
m or less), when the element is mounted on a circuit board and attached to a circuit board or the like with solder or the like, the element is pulled to one end by surface tension of the solder or the like, and the element stands up. The probability of occurrence is very high. This Manhattan phenomenon is shown in FIG. As shown in FIG. 9, an inductance element is arranged on a substrate 200,
Solder 20 between each of terminal portions 15 and 16 and substrate 200
Although the solders 201 and 202 are provided, when the solders 201 and 202 are melted by reflow or the like, the molten solders 201 and 202 are melted due to a difference in the application amount of each of the solders 201 and 202 and a difference in melting point due to a difference in material. The surface tension of the terminal 15 differs between the terminal 15 and the terminal 16, and as a result, as shown in FIG. 9, the terminal rotates about one terminal and the inductance element rises. If the difference between the heights of Z1 and Z2 exceeds 80 μm (preferably 50 μm or less), the elements are arranged on the substrate 200 in an inclined state, and the standing of the elements is promoted. In addition, the Manhattan phenomenon is particularly remarkable in small and lightweight chip-type electronic components (including chip-type inductance elements). One of the causes of the Manhattan phenomenon is the terminal portion 1.
The element is tilted due to the difference in height between 5 and 16 and the substrate 200
We paid attention to being placed in. As a result, by forming the base 11 by molding or the like so that the difference between the heights of Z1 and Z2 is 80 μm or less (preferably 50 μm or less), the occurrence of the Manhattan phenomenon could be significantly suppressed. . By setting the difference between the heights of Z1 and Z2 to 50 μm or less, the occurrence of the Manhattan phenomenon can be substantially suppressed.

A method of manufacturing the inductance element having the above-described configuration will be described below.

First, the base 11 is manufactured by pressing or extruding an insulating material such as alumina. Next, a conductive film 12 is formed on substantially the entire surface of the base 11 by plating or sputtering. Next, a spiral groove 13 is formed in the base 11 on which the conductive film 12 is formed.
The groove 13 is formed by laser processing or cutting. Since the laser processing has very high productivity, the laser processing will be described below. First, the base 11 is attached to a rotating device, the base 11 is rotated, and the base 11 is irradiated with a laser to remove both the conductive film 12 and the base 11, thereby forming a spiral groove. The laser at this time is YAG
A laser, an excimer laser, a carbon dioxide laser, or the like can be used. Furthermore, the depth of the groove 13
The power of the laser is adjusted, and the width of the groove 13 and the like can be changed by exchanging a lens when narrowing down the laser beam. Since the laser absorptivity varies depending on the constituent material of the conductive film 12 and the like, it is preferable to appropriately select the type of laser (laser wavelength) depending on the constituent material of the conductive film 12. The groove 13 may be formed using a grindstone or the like.

After the groove 13 is formed, a protective material 14 is formed by using an electrodeposition method or the like so that all or a part of the conductive film 12 provided on both end surfaces 11L of the groove 13 is exposed.

Next, a terminal film 300 is formed on the conductive film 12 exposed on the end face of the base 11 by using a plating method or the like.

At this point, the product is completed, but as described above, the corrosion resistant film 301 and the bonding film 302 are provided according to the specifications and the like.

Although the present embodiment has been described with respect to an inductance element, the same effect can be obtained with an electronic component having a conductive film formed on a base made of an insulating material.

FIGS. 12 and 13 are a perspective view and a block diagram, respectively, showing a wireless terminal device according to an embodiment of the present invention. 12 and 13, reference numeral 29 denotes a microphone for converting a voice into a voice signal, 30 denotes a speaker for converting a voice signal into a voice, 31 denotes an operation unit including dial buttons and the like, and 32 denotes a display unit for displaying an incoming call and the like. Reference numeral 33 denotes an antenna, and reference numeral 34 denotes a transmission unit for demodulating an audio signal from the microphone 29 and converting it into a transmission signal. The transmission signal produced by the transmission unit 34 is emitted to the outside through the antenna. A receiving unit 35 converts a received signal received by the antenna into an audio signal, and the audio signal created by the receiving unit 35 is transmitted to the speaker 3.
At 0, it is converted to voice. 36 is a transmitting unit 34 and a receiving unit 3
5, a control unit for controlling the operation unit 31 and the display unit 32;

An example of the operation will be described below. First, when there is an incoming call, the receiving unit 35 sends the
The control unit 36 displays a predetermined character or the like on the display unit 32 based on the incoming signal,
Further, when a button or the like for receiving an incoming call is pressed from the operation unit 31, a signal is sent to the control unit 36, and the control unit 36
Set each part to the incoming call mode. That is, the signal received by the antenna 33 is converted into an audio signal by the receiving unit 35, and the audio signal is output from the speaker 30 as audio.
The voice input from the microphone 29 is converted into a voice signal, and is transmitted to the outside via the transmitting unit 34 and the antenna 33.

Next, a case of transmitting a call will be described. First, when transmitting a signal, a signal indicating that the signal is transmitted from the operation unit 31 is input to the control unit 36. Subsequently, when a signal corresponding to the telephone number is transmitted from the operation unit 31 to the control unit 36, the control unit 36 transmits a signal corresponding to the telephone number from the antenna 33 via the transmission unit 34. When communication with the other party is established by the transmission signal, a signal to that effect is sent to the control unit 36 through the reception unit 35 via the antenna 33, and the control unit 36 sets each unit to the transmission mode. That is, the signal received by the antenna 33 is converted into an audio signal by the receiving unit 35, the audio signal is output as audio from the speaker 30, and the audio input from the microphone 29 is converted into an audio signal, Through the antenna 33 to the outside.

[0098] In this embodiment, an example in which voice is transmitted and received has been described. However, the present invention is not limited to voice, and a similar effect can be obtained for a device that transmits or receives data other than voice such as character data. Can be obtained.

The inductance element described above (FIG. 1)
To FIG. 11) have high Q values such as a transmitting circuit, a filter circuit, an antenna section, and a peripheral section of a matching circuit with each stage.
Are used in at least one of the locations that require the same, and the number is about several to forty in one wireless terminal device. By using the above-described inductance element, the size of the substrate and the like inside the device can be reduced, and the phenomenon of standing up of the element can be suppressed. Therefore, the defect rate of the circuit board and the like becomes extremely small, and the productivity becomes very high.

[0100]

According to the present invention , a conductive film is formed on the entire surface of a base having a substantially rectangular parallelepiped chamfered bottom surface, grooves are formed in the conductive film, and terminal portions are provided at both ends of the base. And a protective material made of an electrodeposition film is provided so as to cover the groove.
1, an electronic component having a size of L1 = 0.5 to 1.1 mm L2 = 0.2 to 0.6 mm L3 = 0.2 to 0.6 mm, where width L2 and height L3 , Terminal thickness P
1 and P2 are each 1.5 to 7 times the thickness of the conductive film,
Furthermore provided a part of the terminal portion on the protective member, further the end of the base
The surface of the conductive film provided on the surface is almost
Table of conductive film to be matched or provided on the end face of base
Keep the edge of the protective material slightly inward with respect to the surface.
By providing the protective material, it is possible to realize at least one of good productivity or suppression of occurrence of the element standing phenomenon.

Also, by mounting the above electronic components in the wireless terminal device, the size of the substrate and the like inside the device can be reduced, the size of the substrate and the like inside the device can be reduced, and the element standing phenomenon can be suppressed. The defective rate of a circuit board or the like becomes extremely small, and the productivity becomes very good.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an inductance element as an example of an electronic component according to an embodiment of the present invention.

FIG. 2 is a side sectional view showing an inductance element as an example of an electronic component according to an embodiment of the present invention.

FIG. 3 is a perspective view of a base used for an inductance element as an example of an electronic component according to an embodiment of the present invention.

FIG. 4 is a graph showing a surface roughness and a peeling rate of a base used for an inductance element as an example of an electronic component according to an embodiment of the present invention;

FIG. 5 is a graph showing the relationship between the frequency and the Q value with respect to the surface roughness of a base used for an inductance element as an example of an electronic component according to an embodiment of the present invention.

FIG. 6 is a graph showing the relationship between the frequency and the Q value with respect to the surface roughness of a conductive film used as an example of an electronic component according to one embodiment of the present invention;

FIG. 7 is an enlarged cross-sectional view of a part provided with a protective material for an inductance element as an example of an electronic component according to an embodiment of the present invention.

FIG. 8 is a view showing a step of providing a protective material for an inductance element as an example of an electronic component according to an embodiment of the present invention.

FIG. 9 illustrates the Manhattan phenomenon.

FIG. 10 is a partially enlarged cross-sectional view of an inductance element as an example of an electronic component according to an embodiment of the present invention.

FIG. 11 is a partially enlarged cross-sectional view of an inductance element as an example of an electronic component according to an embodiment of the present invention.

FIG. 12 is a perspective view showing a wireless terminal device according to one embodiment of the present invention;

FIG. 13 is a block diagram showing a wireless terminal device according to an embodiment of the present invention;

FIG. 14 is a side view showing a conventional inductance element.

[Explanation of symbols]

 Reference Signs List 11 base 12 conductive film 13 groove 14 protective material 15, 16 terminal unit 30 speaker 31 operation unit 32 display unit 33 antenna 34 transmission unit 35 reception unit 36 control unit 300 terminal film 301 corrosion-resistant film 302 bonding film

 ──────────────────────────────────────────────────の Continued on the front page (72) Inventor Hiromi Sakita 1006 Kazuma Kadoma, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. (56) References JP-A-11-144959 (JP, A) JP-A-7-307201 (JP, A) JP-A-7-122446 (JP, A) JP-A-8-88123 (JP, A) JP-A-9-186037 (JP, A) JP-A-5-267025 (JP, A) Japanese Utility Model Application No. Sho 58-155823 (JP, U)

Claims (9)

(57) [Claims] 1. A conductive film is provided on the entire surface of a base having a substantially rectangular parallelepiped bottom and chamfered, and a groove is provided in the conductive film.
Only, the a pair of terminal portions attached to the base end face of so as to sandwich the base, provided a protective member constituted by provided electrodeposition film on the conductive film, a length L1, a width L2 = height L3: L1 = 0.5-1.1 mm L2 = 0.2-0.6 mm L3 = 0.2-0.6 mm A thickness of 1.5 to 7 times the thickness of the conductive film, a part of the terminal portion is provided on the protective material formed on a side surface of the base, and further provided on an end surface of the base. The surface of the conductive film
Make the ends of the protective material substantially coincide with each other or
Of the protective material with respect to the surface of the conductive film provided on the end face.
An electronic component , wherein a protective material is provided such that an end is located slightly inside . 2. Each of the terminal portions has a thickness P1 and P2 of 30 μm.
The electronic component according to claim 1, wherein the electronic component has a thickness of m to 140 μm. 3. The amount of protrusion P3, P of the terminal portion from the surface of the protective material.
4. The electronic component according to claim 1, wherein each of said components has a thickness of 20 to 120 [mu] m. 4. The length P5 of the terminal portion exposed on the side surface of the base.
2. The electronic component according to claim 1, wherein each of P6 is 30 μm to 100 μm. 5. The electronic component according to claim 1, wherein the terminal portion has a structure in which a terminal film is laminated on a conductive film. 6. The electronic component according to claim 5, wherein at least one of a corrosion-resistant film and a bonding film is provided on the terminal film. 7. The electronic component according to claim 1, wherein all or at least a part of the terminal portion is formed by plating. 8. The electronic component according to claim 1, wherein an inductance component is formed by the conductive film and the groove. 9. A display, conversion means for converting at least one of a data signal and an audio signal into a transmission signal or converting a reception signal into at least one of a data signal and an audio signal, and converting the transmission signal and the reception signal. 9. A wireless terminal device comprising an antenna for transmitting and receiving and control means for controlling each part, wherein at least one of a transmitting circuit, a filter circuit, an antenna part and a peripheral part of a matching circuit for each stage and the like are provided. A wireless terminal device using the electronic component according to claim 1.