JP3275786B2 - Pressure welding tool for IC chip lead material bonding - Google Patents

Pressure welding tool for IC chip lead material bonding

Info

Publication number
JP3275786B2
JP3275786B2 JP19966297A JP19966297A JP3275786B2 JP 3275786 B2 JP3275786 B2 JP 3275786B2 JP 19966297 A JP19966297 A JP 19966297A JP 19966297 A JP19966297 A JP 19966297A JP 3275786 B2 JP3275786 B2 JP 3275786B2
Authority
JP
Japan
Prior art keywords
weight
balance
tool
welding tool
brazing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP19966297A
Other languages
Japanese (ja)
Other versions
JPH1145915A (en
Inventor
雄三 大澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP19966297A priority Critical patent/JP3275786B2/en
Publication of JPH1145915A publication Critical patent/JPH1145915A/en
Application granted granted Critical
Publication of JP3275786B2 publication Critical patent/JP3275786B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75Apparatus for connecting with bump connectors or layer connectors

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、実用に際して、
残留応力の経時的蓄積がきわめて少なく、したがって大
型化しても基体割れやろう付け剥離の発生のないICチ
ップのリード材ボンディング用圧接工具に関するもので
ある。
The present invention relates to
The present invention relates to a pressure welding tool for bonding a lead material of an IC chip, which hardly accumulates residual stress over time, and therefore does not cause cracking of a substrate or peeling of brazing even when the size is increased.

【0002】[0002]

【従来の技術】従来、一般に、ICチップの製造に際し
て、例えば図1の概略説明図で示されるように、ICチ
ップの表面に、前記ICチップ表面の上方位置に横方向
所定間隔配置された多数のCu合金などのリード材の先
端部を、前記リード材と同じ配置でICチップ表面に形
成されたAu−In合金(はんだ材)などのバンプを介
して、内蔵したヒーターで500〜1000℃に加熱さ
れた圧接工具で圧下するすることにより接合(ボンディ
ング)することが行われている。また、ICチップのリ
ード材のボンディングに用いられる圧接工具としては、
例えば特許第2520971号明細書に記載されるよう
に、工具本体を、0.5〜5mmの厚さを有し、かつS
iC基焼結体やSi3 4 基焼結体、さらにAlN基焼
結体などからなる基体の表面に、熱フィラメント法やマ
イクロ波プラズマCVD法、さらに高周波プラズマCV
D法などの気相合成法を用いて5〜300μmの平均層
厚の多結晶ダイヤモンド膜を形成したもので構成し、こ
の工具本体を、コバール合金やインバー合金、さらにW
C基超硬合金などからなるヒーター内蔵のシャンク部
に、各種のCu合金やAg合金などからなるろう材を用
いて接合した構造のものが知られている。
2. Description of the Related Art Conventionally, in general, when manufacturing an IC chip, as shown in, for example, a schematic explanatory view of FIG. The tip of a lead material such as a Cu alloy is heated to 500 to 1000 ° C. by a built-in heater via a bump such as an Au-In alloy (solder material) formed on the surface of an IC chip in the same arrangement as the lead material. Bonding is performed by reducing the pressure with a heated pressure welding tool. In addition, as a pressure welding tool used for bonding a lead material of an IC chip,
For example, as described in Japanese Patent No. 2520971, a tool body has a thickness of 0.5 to 5 mm, and
A hot filament method, a microwave plasma CVD method, and a high-frequency plasma CV are applied to the surface of a substrate made of an iC-based sintered body, a Si 3 N 4 -based sintered body, or an AlN-based sintered body.
The tool body is formed by forming a polycrystalline diamond film having an average layer thickness of 5 to 300 μm using a vapor phase synthesis method such as the D method.
There is known a structure in which a shank portion containing a heater made of a C-base cemented carbide or the like is joined using a brazing material made of various Cu alloys, Ag alloys, or the like.

【0003】[0003]

【発明が解決しようとする課題】一方、近年の半導体装
置の高集積化はめざましく、これに伴い、ICチップは
大面積化し、したがってこれの製造に用いられる圧接工
具は大型化する傾向にあるが、上記の従来圧接工具はじ
め、その他多くの圧接工具においては、これを大型化す
ればするほど、その実用に際して、圧接工具を構成する
工具本体の基体に割れが発生し易くなるばかりでなく、
基体とシャンク部のろう付け部に剥離が発生し易くな
り、使用寿命の短命化が避けられないのが現状である。
これは作業態様、すなわち500〜1000℃に加熱し
た圧接工具を常温のリード材に圧接し、このリード材を
介してバンプを溶融温度に加熱してボンディングを行な
う工程の繰り返しに原因するものと考えられ、この場
合、圧接工具、特にこれを構成する基体は急激な加熱冷
却の繰り返しを受けることになるが、同時に発生した残
留応力が経時的に蓄積し、かつこの基体中の残留応力は
圧接工具が大型化するほど大きく、ついにはこの蓄積し
て大きくなった残留応力が基体割れやろう付け剥離を引
き起こすものと解される。
On the other hand, in recent years, high integration of semiconductor devices has been remarkable, and as a result, the area of IC chips has increased, and the press-fitting tools used for manufacturing the same have tended to increase in size. In addition to the above-mentioned conventional press-welding tools, in many other press-welding tools, the larger the size of the tool, the more likely it is that cracks will occur in the body of the tool body constituting the press-welding tool in practical use,
At present, peeling tends to occur at the brazing portion between the base and the shank portion, and shortening of service life is inevitable.
This is considered to be caused by the repetition of the working mode, that is, the step of pressing the welding tool heated to 500 to 1000 ° C. to the lead material at room temperature and heating the bumps to the melting temperature via this lead material to perform the bonding. In this case, the press-welding tool, especially the substrate constituting the same, is subjected to rapid repetition of heating and cooling. At the same time, the residual stress generated at the same time accumulates over time, and the residual stress in the substrate is reduced by the press-welding tool. It is understood that the larger the size, the larger the size of the residual stress, and finally, the accumulated and increased residual stress causes substrate cracking and brazing peeling.

【0004】[0004]

【課題を解決するための手段】そこで、本発明者等は、
上述のような観点から、急激な加熱冷却の繰り返しを受
けても、残留応力の発生が少なく、かつ残留応力の経時
的蓄積のない圧接工具を開発すべく研究を行なった結
果、圧接工具の基体を、TiとWの炭窒化物固溶体(た
だし、Wの割合はTiとの合量に占める割合で5〜40
%):5〜60重量%、を含有し、残りが炭化タングス
テン(以下、WCで示す)と不可避不純物からなる組成
を有するセラミックスで構成し、また、同ろう材を、A
g:5〜15%、P:1〜10%を含有し、さらに必要
に応じてTiおよび/またはZr:0.5〜10%を含
有し、残りがCuと不可避不純物からなる組成を有する
Cu合金で構成し、さらに、同シャンク部を、Cr:1
0〜25%、Fe:5〜15%を含有し、残りがNiと
不可避不純物からなる組成を有するNi合金(以上、%
はいずれも重量%を示す。以下も同じ)で構成すると、
この結果の圧接工具は、上記基体が残留応力の発生し難
い性質を有し、かつ上記ろう材が残留応力の蓄積を抑制
するように作用するばかりでなく、前記基体およびシャ
ンク部とのろう付け性にもすぐれているので、これを大
型化しても、基体割れやろう付け剥離の発生なく、上記
シャンク部によって確保されたすぐれた耐熱性と相まっ
て、著しく長期に亘っての使用が可能になるという研究
結果が得られたのである。
Means for Solving the Problems Accordingly, the present inventors have
From the above-mentioned viewpoints, as a result of researching to develop a pressure welding tool that generates little residual stress and does not accumulate the residual stress over time even when repeatedly subjected to rapid heating and cooling, the base of the pressure welding tool was obtained. Is a solid solution of carbon and nitride of Ti and W (however, the proportion of W is 5-40% of the total amount with Ti).
%): 5 to 60% by weight, and the balance is made of ceramics having a composition of tungsten carbide (hereinafter, referred to as WC) and unavoidable impurities.
g: 5 to 15%, P: 1 to 10%, and if necessary, Ti and / or Zr: 0.5 to 10%, the balance being Cu having a composition consisting of Cu and inevitable impurities. Alloy, and further, the shank portion is Cr: 1
Ni alloy having a composition of 0 to 25% and Fe: 5 to 15%, with the balance being Ni and unavoidable impurities (above,%
Indicates weight%. The same applies to the following)
The resulting pressure welding tool not only has the property that the base does not easily generate residual stress, and the brazing material not only acts to suppress the accumulation of residual stress, but also brazes the base and the shank. It is also excellent in heat resistance, so even if it is made larger, it will not crack or peel off by brazing, and, combined with the excellent heat resistance secured by the shank portion, can be used for a remarkably long period of time. The research result was obtained.

【0005】この発明は、上記の研究結果に基づいてな
されたものであって、基体の表面に多結晶ダイヤモンド
膜を気相合成析出してなる工具本体を、ろう材を用いて
ヒーター内蔵のシャンク部に接合した構造の圧接工具に
おいて、上記工具本体の基体を、Wの割合がTiとの合
量に占める割合で5〜40%のTiとWの炭窒化物固溶
体[以下、(Ti,W)CNで示す):5〜60%、を
含有し、残りがWCと不可避不純物からなる組成を有す
るセラミックスで構成し、また、上記ろう材を、Ag:
5〜15%、P:1〜10%、を含有し、さらに必要に
応じて、Tiおよび/またはZr:0.5〜10%、を
含有し、残りがCuと不可避不純物からなる組成を有す
るCu合金で構成し、さらに、上記シャンク部を、C
r:10〜25%、Fe:5〜15%、を含有し、残り
がNiと不可避不純物からなる組成を有するNi合金で
構成してなる、基体割れやろう付け剥離の発生のないI
Cチップのリード材ボンディング用圧接工具に特徴を有
するものである。
The present invention has been made on the basis of the above-mentioned research results. A tool body formed by vapor-phase synthesis deposition of a polycrystalline diamond film on the surface of a substrate is provided by using a brazing material and a shank having a built-in heater. In the press-welding tool having a structure joined to the portion, the base of the tool main body is formed of a carbon-nitride solid solution of Ti and W in a ratio of 5 to 40% of the total amount of Ti with W (hereinafter, (Ti, W ) Represented by CN): 5 to 60%, the remainder being composed of ceramics having a composition consisting of WC and unavoidable impurities.
5 to 15%, P: 1 to 10%, and, if necessary, Ti and / or Zr: 0.5 to 10%, with the balance having Cu and inevitable impurities. It is composed of a Cu alloy, and further, the shank portion is made of C
r: 10 to 25%, Fe: 5 to 15%, and the remainder is composed of a Ni alloy having a composition of Ni and unavoidable impurities.
The present invention has a feature in a press-contact tool for bonding a lead material of a C chip.

【0006】なお、この発明の圧接工具において、通常
の気相合成法によって基体表面に形成される多結晶ダイ
ヤモンド膜の厚さは、前記基体の厚さを2〜5mmとし
た状態で、平均層厚で30〜100μmとするのが望ま
しく、また前記多結晶ダイヤモンド膜の形成に際して
は、その前処理として、前記基体を、圧力:10〜76
0torrの窒素又はAr雰囲気中、温度:1350〜
1550℃に所定時間保持の条件で加熱処理を施して、
前記基体の表面部にTi系炭窒化物の富化層を5〜10
0μmの平均層厚で形成すると共に、基体表面粗さを
S:5〜20μmとすることにより多結晶ダイヤモンド
膜の密着性向上を図るのがよい。
In the pressure welding tool of the present invention, the thickness of the polycrystalline diamond film formed on the surface of the substrate by the ordinary vapor phase synthesis method is such that the thickness of the substrate is 2 to 5 mm, The thickness is desirably 30 to 100 μm. When forming the polycrystalline diamond film, as a pretreatment, the substrate is pressed at a pressure of 10 to 76 μm.
0 torr nitrogen or Ar atmosphere, temperature: 1350-
Heat treatment under the condition of holding at 1550 ° C. for a predetermined time,
A Ti-based carbonitride-enriched layer is formed on the surface of
It is preferable to improve the adhesion of the polycrystalline diamond film by forming an average layer thickness of 0 μm and setting the surface roughness of the substrate to S: 5 to 20 μm.

【0007】つぎに、この発明の圧接工具を構成する基
体、ろう材、およびシャンク部の組成を上記の通りに定
めた理由を説明する。 (1)基体 基本的に(Ti,W)CN相とWC相の2相組織を有す
るセラミックス基体は、上記の通り繰り返しの加熱冷却
を受けても残留応力が発生し難い性質をもつが、これら
の性質は、(Ti,W)CNにおけるWの割合をTiと
の合量に占める割合で5〜40%、望ましくは10〜3
5%とし、かつ(Ti,W)CNの割合をWCとの合量
に占める割合で5〜60%、望ましくは15〜50%と
することにより確保されるものであり、したがって(T
i,W)CNのWの占める割合が5%未満でも、40%
を越えても、さらに(Ti,W)CNの占める割合が5
%未満でも、60%を越えても前記の残留応力が発生し
難い性質を安定的に確保することができない。これらの
ことは経験的に得られたことであり、、これらの結果に
基づいて上記の通りに定めたものである。
Next, the reason why the compositions of the base, the brazing material and the shank constituting the press-welding tool of the present invention are determined as described above will be described. (1) Substrate Basically, a ceramic substrate having a two-phase structure of a (Ti, W) CN phase and a WC phase has a property that a residual stress is hardly generated even when subjected to repeated heating and cooling as described above. Has a ratio of 5 to 40%, preferably 10 to 3%, of the ratio of W in (Ti, W) CN to the total amount with Ti.
5%, and the ratio of (Ti, W) CN to the total amount of WC and 5-60%, preferably 15-50%.
i, W) 40% even if the ratio of W in CN is less than 5%
, The ratio of (Ti, W) CN is still 5%.
% Or more than 60%, it is impossible to stably secure the property that the residual stress is hardly generated. These have been obtained empirically and have been determined as described above based on these results.

【0008】(2)ろう材 (a) Ag Ag成分には、ろう材の融点を下げ、もって流動性を増
して少量のろう材で満足なろう付けを可能ならしめる作
用があるほか、ろう材の主成分であるCu成分との共存
において、残留応力を吸収し、もって残留応力の経時的
蓄積を抑制すると共に、加熱されたシャンク部から基体
への熱伝達を促進する作用があるが、その含有量が5%
未満では前記作用に所望の効果が得られず、一方その含
有量が15%を越えると、ろう付け部の強度が低下する
ようになることから、その含有量を5〜15%、望まし
くは7〜13%と定めた。
(2) Brazing filler metal (a) Ag The Ag component has a function of lowering the melting point of the brazing filler metal, thereby increasing the fluidity and enabling satisfactory brazing with a small amount of brazing filler metal. In the coexistence with the Cu component, which is the main component of, there is an effect of absorbing the residual stress, thereby suppressing the accumulation of the residual stress with time, and promoting heat transfer from the heated shank portion to the base. Content is 5%
When the content is less than 15%, the desired effect cannot be obtained. On the other hand, when the content exceeds 15%, the strength of the brazed portion decreases, so that the content is 5 to 15%, preferably 7%. 1313%.

【0009】(b) P P成分には、ろう材の融点を下げると共に、これ自体の
強度を向上させ、もってろう付け部の強度を向上させる
作用があるが、その含有量が1%未満では前記作用に所
望の効果が得られず、一方その含有量が10%を越える
と、ろう付け部が急激に脆化するようになることから、
その含有量を1〜10%、望ましくは3〜8%と定め
た。
(B) The PP component has the effect of lowering the melting point of the brazing material and improving its own strength, thereby improving the strength of the brazed portion. If the desired effect cannot be obtained in the above-mentioned action, and if the content exceeds 10%, the brazed portion rapidly becomes brittle,
The content was determined to be 1 to 10%, preferably 3 to 8%.

【0010】(c) TiおよびZr これらの成分には、ろう材の工具本体と切刃片に対する
ぬれ性を一段と向上させ、もって接合強度を向上させる
作用があるので必要に応じて含有されるが、その含有量
が0.5%未満では前記作用に所望の効果が得られず、
一方その含有量が10%を越えると、ろう付け部の強度
が低下するようになることから、その含有量を0.5〜
10%、望ましくは1〜6%と定めた。
(C) Ti and Zr These components are contained as necessary because they have the function of further improving the wettability of the brazing material to the tool body and the cutting piece and thereby improving the joining strength. If the content is less than 0.5%, the desired effect cannot be obtained in the above-mentioned action,
On the other hand, if the content exceeds 10%, the strength of the brazed portion will decrease, so that the content is 0.5 to
10%, preferably 1 to 6%.

【0011】(3)シャンク部 シャンク部には、内蔵するヒーターによって自身を50
0〜1000℃に加熱し、これにろう付けされた工具本
体の温度を同じ温度に保持する役割があるので、すぐれ
た耐熱性と耐酸化性を具備することが求められる。した
がって、シャンク部を構成するNi合金のCr成分は、
耐熱性および耐酸化性を向上させる成分として含有する
が、その割合が10%未満では、所望の耐熱性および耐
酸化性を確保することができず、一方その割合が25%
を越えると、強度がていかするようになることから、そ
の割合を10〜25%と定めた。また、同じくFe成分
には、強度を向上させる作用があるが、その割合が5%
未満では、所望の強度を確保することができず、一方そ
の割合が15%を越えると、耐熱性および耐酸化性に低
下傾向が現れるようになることから、その割合を5〜1
5%と定めた。
(3) Shank section The shank section has its own 50 heaters by a built-in heater.
It is required to have excellent heat resistance and oxidation resistance because it has a role of heating to 0 to 1000 ° C. and maintaining the temperature of the brazed tool body at the same temperature. Therefore, the Cr component of the Ni alloy constituting the shank portion is:
Although it is contained as a component for improving heat resistance and oxidation resistance, if the proportion is less than 10%, desired heat resistance and oxidation resistance cannot be secured, while the proportion is 25%.
, The strength is reduced, so the ratio is set to 10 to 25%. Similarly, the Fe component has the effect of improving the strength, but the proportion is 5%.
If the ratio is less than 15%, the desired strength cannot be ensured. On the other hand, if the ratio exceeds 15%, the heat resistance and the oxidation resistance tend to decrease.
It was determined to be 5%.

【0012】[0012]

【発明の実施の形態】この発明の圧接工具を実施例によ
り具体的に説明する。まず、基体を製造する目的で、原
料粉末として、いずれも1.2μmの平均粒径を有し、
Wの割合がTiとの合量に占める割合で(以下同じ)5
%の(Ti,W)CN[重量比で(以下同じ)、WC/
TiC/TiN=0.5/60/35、以下、(Ti,
W)CN−(1)と云う)粉末、Wの割合が10%の
(Ti,W)CN[WC/TiC/TiN=10/50
/40、以下、(Ti,W)CN−(2)と云う)粉
末、Wの割合が15%の(Ti,W)CN[WC/Ti
C/TiN=15/45/30、以下、(Ti,W)C
N−(3)と云う)粉末、Wの割合が20%の(Ti,
W)CN[WC/TiC/TiN=20/45/35、
以下、(Ti,W)CN−(4)と云う)粉末、Wの割
合が25%の(Ti,W)CN[WC/TiC/TiN
=25/40/35、以下、(Ti,W)CN−(5)
と云う)粉末、Wの割合が30%の(Ti,W)CN
[WC/TiC/TiN=30/40/30、以下、
(Ti,W)CN−(6)と云う)粉末、Wの割合が3
5%の(Ti,W)CN[WC/TiC/TiN=35
/40/25、以下、(Ti,W)CN−(7)と云
う)粉末、Wの割合が40%の(Ti,W)CN[WC
/TiC/TiN=40/40/20、以下、(Ti,
W)CN−(8)と云う)粉末、および1.0μmの平
均粒径を有するWC粉末を用意し、これら原料粉末をそ
れぞれ表1に示される配合組成に配合し、ボールミルで
72時間湿式混合し、乾燥した後、1ton/cm2
圧力で圧粉体にプレス成形し、この圧粉体をN2 ガス分
圧:200torr、温度:1350℃、1時間保持の
条件で窒化処理した後、同じく表1に示される条件(た
だし、焼結温度での保持時間は1時間)で焼結し、この
結果の焼結体に、圧力:1000気圧のAr中、温度:
1350℃に1時間保持の条件でHIP処理を施し、さ
らに機械加工にて長さ:10mm×幅:4mm×厚さ:
2.5mmの寸法とし、これに10〜200torrの
範囲内の所定の圧力の窒素雰囲気中、1350〜150
0℃の範囲内の所定の温度に0.5時間保持の条件で表
面部のWC粒の粗大化熱処理を施すことにより基体A〜
Hをそれぞれ製造した。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The press-contact tool of the present invention will be specifically described with reference to embodiments. First, for the purpose of manufacturing a substrate, each of the raw material powders has an average particle size of 1.2 μm,
The ratio of W to the total amount with Ti (hereinafter the same) 5
% (Ti, W) CN [weight ratio (the same applies hereinafter), WC /
TiC / TiN = 0.5 / 60/35, hereinafter, (Ti,
(W) CN- (1)) powder, (Ti, W) CN having a W content of 10% [WC / TiC / TiN = 10/50
/ 40, hereafter referred to as (Ti, W) CN- (2)) powder, (Ti, W) CN with 15% W [WC / Ti
C / TiN = 15/45/30, hereinafter, (Ti, W) C
N- (3)) and 20% of W (Ti,
W) CN [WC / TiC / TiN = 20/45/35,
(Ti, W) CN- (4)) (Ti, W) CN [WC / TiC / TiN] in which the proportion of W is 25%
= 25/40/35, hereinafter, (Ti, W) CN- (5)
(Ti, W) CN containing 30% of powder and W
[WC / TiC / TiN = 30/40/30, hereinafter,
(Ti, W) CN- (6)) powder, the proportion of W is 3
5% of (Ti, W) CN [WC / TiC / TiN = 35
/ 40/25, hereafter referred to as (Ti, W) CN- (7)) powder, (Ti, W) CN [WC
/ TiC / TiN = 40/40/20; hereinafter, (Ti,
W) CN- (8)) powder and WC powder having an average particle size of 1.0 μm are prepared, and these raw material powders are respectively blended into the blending composition shown in Table 1, and wet-mixed in a ball mill for 72 hours. Then, after drying, it is press-molded into a green compact at a pressure of 1 ton / cm 2 , and the green compact is nitrided under the conditions of N 2 gas partial pressure: 200 torr, temperature: 1350 ° C., and holding for 1 hour. Similarly, sintering was performed under the conditions shown in Table 1 (however, the holding time at the sintering temperature was 1 hour).
HIP treatment is performed at 1350 ° C. for 1 hour, and the length is further machined to 10 mm × width: 4 mm × thickness:
In a nitrogen atmosphere at a predetermined pressure within a range of 10 to 200 torr, the size is set to 1350 to 150
By subjecting the WC grains on the surface to coarsening heat treatment at a predetermined temperature in the range of 0 ° C. for 0.5 hour,
H were each manufactured.

【0013】ついで、上記の基体A〜Hに、前処理とし
て、まず5%硝酸水溶液中に10分間浸漬して表面を清
浄化し、さらに平均粒径:0.5μmのダイヤモンドパ
ウダーを分散含有させたアルコール中に10分間保持の
条件で超音波表面傷付け処理を施した状態で、これを通
常のマイクロ波プラズマCVD装置に装入し、 反応ガス組成:CH4 (流量:10cc/min)+H
2 (流量:500cc/min)、 雰囲気圧力:50torr、 マイクロ波出力:2kw、 基体温度:900℃、 の条件で気相合成を行い、上記の基体A〜Hのそれぞれ
の表面に同じく表2に示される平均層厚の多結晶ダイヤ
モンド膜を形成することにより工具本体A〜Hをそれぞ
れ製造した。
Next, as a pretreatment, the surfaces of the substrates A to H were first immersed in a 5% nitric acid aqueous solution for 10 minutes to clean the surface, and further dispersed and contained diamond powder having an average particle diameter of 0.5 μm. In a state where the ultrasonic surface damage treatment was performed under the condition of holding in alcohol for 10 minutes, this was charged into a usual microwave plasma CVD apparatus, and the reaction gas composition was CH 4 (flow rate: 10 cc / min) + H.
2 (flow rate: 500 cc / min), atmosphere pressure: 50 torr, microwave output: 2 kW, substrate temperature: 900 ° C., and vapor phase synthesis was performed. Tool bodies A to H were each manufactured by forming a polycrystalline diamond film having the average layer thickness shown.

【0014】また、黒鉛るつぼで、それぞれ表3に示さ
れる組成のCu合金溶湯を調整し、インゴットに鋳造
し、これを熱間圧延にて厚さ:0.2mmの熱延板と
し、この熱延板に冷間圧延を施して厚さ:0.1mmの
ろう材a〜hをそれぞれ製造した。
In a graphite crucible, a Cu alloy melt having the composition shown in Table 3 was prepared, cast into an ingot, and hot-rolled into a hot-rolled sheet having a thickness of 0.2 mm. The rolled sheet was subjected to cold rolling to produce brazing materials a to h each having a thickness of 0.1 mm.

【0015】さらに、同じく黒鉛るつぼで、それぞれ表
4に示される組成のNi合金溶湯を調整し、これを精密
鋳造(ロストワックス法)した後、機械加工することに
より上記基体の表面寸法と同じ寸法のろう付け面をもっ
たシャンク部ア〜オをそれぞれ製造した。
Further, in the same graphite crucible, Ni alloy melts having the compositions shown in Table 4 were prepared, precision cast (lost wax method), and then machined to obtain the same dimensions as the surface dimensions of the substrate. The shank parts A to O having the brazing surfaces of No. 1 to No. 3 were manufactured.

【0016】ついで、上記の工具本体、ろう材、および
シャンク部を、表5に示される組み合わせでセットし、
Ar雰囲気中、850〜1000℃の範囲内の所定温度
に10分間保持の条件で工具本体をろう材を介してびシ
ャンク部にろう付け接合することにより本発明圧接工具
1〜8をそれぞれ製造した。
Next, the tool body, the brazing material, and the shank are set in a combination shown in Table 5,
The crimping tools 1 to 8 of the present invention were manufactured by brazing the tool main body to the shank portion via a brazing material under the condition of holding at a predetermined temperature in the range of 850 to 1000 ° C. for 10 minutes in an Ar atmosphere. .

【0017】また、比較の目的で、工具本体として、い
ずれも多結晶ダイヤモンド膜の平均層厚が50μmであ
るが、基体が、それぞれSi3 4 −5%Y23 −3
%Al23 からなる組成を有するSi3 4 基焼結体
(以下、工具本体Jと云う)、AlN−3%Y23
2%CaOからなる組成を有するAlN基焼結体(以
下、工具本体Kと云う)、およびSiC−2%B4 Cか
らなる組成を有するSiC基焼結体(以下、工具本体L
と云う)、また、シャンク部としてFe−19.7%N
i−19.3%Co−0.95%Mnからなる組成を有
するFe−Ni−Co合金のシャンク部(以下、シャン
ク部カと云う)、並びにろう材として、Cu−32%Z
n−30%Agからなる組成を有するCu−Zn−Ag
合金のろう材(以下、ろう材iと云う)を用いる以外は
同一の条件で比較圧接工具1〜3をそれぞれ製造した。
For comparison purposes, each of the tool bodies has a polycrystalline diamond film having an average layer thickness of 50 μm, but the substrate is made of Si 3 N 4 -5% Y 2 O 3 -3.
% Al 2 Si 3 N 4 groups sintered body having a composition consisting of O 3 (hereinafter referred to as tool body J), AlN-3% Y 2 O 3 -
AlN-based sintered body having a composition of 2% CaO (hereinafter, referred to as tool body K) and SiC-based sintered body having a composition of SiC-2% B 4 C (hereinafter, tool body L)
And a shank portion of Fe-19.7% N
i-19.3% Co-0.95% Mn The shank portion (hereinafter referred to as shank portion) of a Fe-Ni-Co alloy having a composition of Mn and Cu-32% Z as a brazing material.
Cu-Zn-Ag having a composition consisting of n-30% Ag
The comparative pressure welding tools 1 to 3 were manufactured under the same conditions except that an alloy brazing material (hereinafter, referred to as brazing material i) was used.

【0018】この結果得られた本発明圧接工具1〜8お
よび比較圧接工具1〜3について、多結晶ダイヤモンド
膜の先端面を縦:15mm×横:5mmに加工し、かつ
同表面粗さをRmax で0.8μmに研磨した状態で、以
下に示す条件で加速耐久試験を行った。すなわち、加速
耐久試験は、図1のICチップおよびリード材に代っ
て、無酸素銅およびAl合金(Si:2%含有)からな
り、いずれも表面:20mm×10mm、厚さ:10m
mの寸法をもち、表面に1個の表面寸法が0.5mm×
0.5mmにして、高さが3mmの突起が10個づつ長
さ方向に沿って2列配列配置された水冷ボックスを用
い、この水冷ボックスの突起配設面に対して、上記各種
の圧接工具を、600℃に加熱した状態で、10kgの
荷重で1サイクルを8秒とし、このうちの3秒を圧接時
間とした条件で行い、使用寿命に至るまでのサイクル数
を測定した。これらの測定結果を表5に示した。
With respect to the press-welded tools 1 to 8 of the present invention and the comparative press-welded tools 1 to 3 obtained as described above, the tip surface of the polycrystalline diamond film was machined to a length of 15 mm × width: 5 mm and the surface roughness was set to Rmax. Then, an accelerated durability test was performed under the following conditions in a state of being polished to 0.8 μm. That is, in the accelerated durability test, oxygen-free copper and an Al alloy (containing 2% of Si) were used instead of the IC chip and the lead material shown in FIG. 1, and both had a surface of 20 mm × 10 mm and a thickness of 10 m.
m dimension, one surface dimension is 0.5mm x
Using a water-cooled box in which 0.5 mm is provided and two protrusions each having a height of 3 mm are arranged in two rows along the length direction by 10 pieces, and the above various press-welding tools are provided on the surface of the water-cooled box on which the protrusions are provided. While heating at 600 ° C., one cycle was performed for 8 seconds with a load of 10 kg, and 3 seconds of the cycle was used as a press contact time, and the number of cycles until the service life was reached was measured. Table 5 shows the results of these measurements.

【0019】[0019]

【表1】 [Table 1]

【0020】[0020]

【表2】 [Table 2]

【0021】[0021]

【表3】 [Table 3]

【0022】[0022]

【表4】 [Table 4]

【0023】[0023]

【表5】 [Table 5]

【0024】[0024]

【発明の効果】表5に示される結果から、本発明圧接工
具1〜8は、上記の通りの基体、ろう材、およびシャン
ク部の組み合わせによって残留応力の発生が抑制され、
かつ残留応力の経時的蓄積が阻止されることから、基体
割れやろう付け剥離の発生なく、すぐれた耐久性を長期
に亘って発揮するのに対して、比較圧接工具1〜3にお
いては、いずれも基体割れまたはろう付け剥離が原因で
比較的短時間で使用寿命に至ることが明らかである。上
述のように、この発明の圧接工具は、これを大型化して
も基体割れやろう付け剥離の発生なく、長期に亘っての
使用を可能とするので、半導体装置の高集積化に十分満
足に対応するものである。
According to the results shown in Table 5, the press-welding tools 1 to 8 of the present invention can suppress the generation of residual stress by the combination of the base, the brazing material, and the shank as described above.
In addition, since the accumulation of residual stress with time is prevented, excellent durability is exhibited over a long period of time without occurrence of substrate cracking or brazing peeling. It is also clear that the service life can be reached in a relatively short time due to cracking of the substrate or brazing. As described above, the press-welding tool of the present invention can be used for a long period of time without causing cracks in the substrate or peeling off by brazing even if the tool is enlarged, so that it is sufficiently satisfactory for high integration of semiconductor devices. Corresponding.

【図面の簡単な説明】[Brief description of the drawings]

【図1】圧接工具の使用態様を示す概略説明図である。FIG. 1 is a schematic explanatory view showing a use mode of a pressure welding tool.

フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H01L 21/60 Continuation of front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 21/60

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 基体の表面に多結晶ダイヤモンド膜を気
相合成析出してなる工具本体を、ろう材を用いてヒータ
ー内蔵のシャンク部に接合した構造の圧接工具におい
て、 上記工具本体の基体を、 TiとWの炭窒化物固溶体(ただし、Wの割合はTiと
の合量に占める割合で5〜40重量%):5〜60重量
%、を含有し、残りが炭化タングステンと不可避不純物
からなる組成を有するセラミックスで構成し、 また、上記ろう材を、 Ag:5〜15重量%、 P:1〜10重量%、を含有し、残りがCuと不可避不
純物からなる組成を有するCu合金で構成し、 さらに、上記シャンク部を、 Cr:10〜25重量%、 Fe:5〜15重量%、を含有し、残りがNiと不可避
不純物からなる組成を有するNi合金で構成したことを
特徴とする基体割れやろう付け剥離の発生のないICチ
ップのリード材ボンディング用圧接工具。
1. A press-welding tool having a structure in which a tool body formed by vapor-phase synthetic deposition of a polycrystalline diamond film on a surface of a base is joined to a shank portion with a built-in heater using a brazing material. , A carbon nitride solid solution of Ti and W (where W is 5 to 40% by weight based on the total amount of Ti): 5 to 60% by weight, with the balance being tungsten carbide and inevitable impurities. The brazing material is made of a Cu alloy containing Ag: 5 to 15% by weight, P: 1 to 10% by weight, and the balance being Cu and inevitable impurities. Further, the shank portion is made of a Ni alloy containing Cr: 10 to 25% by weight, Fe: 5 to 15% by weight, and the balance being composed of Ni and unavoidable impurities. Base Crack brazing peeled IC chip lead material bonding crimping tool with no occurrence of.
【請求項2】 基体の表面に多結晶ダイヤモンド膜を気
相合成析出してなる工具本体を、ろう材を用いてヒータ
ー内蔵のシャンク部に接合した構造の圧接工具におい
て、 上記工具本体の基体を、 TiとWの炭窒化物固溶体(ただし、Wの割合はTiと
の合量に占める割合で5〜40重量%):5〜60重量
%、を含有し、残りが炭化タングステンと不可避不純物
からなる組成を有するセラミックスで構成し、 また、上記ろう材を、 Ag:5〜15重量%、 P:1〜10重量%、を含有し、さらに、 Tiおよび/またはZr:0.5〜10重量%、を含有
し、残りがCuと不可避不純物からなる組成を有するC
u合金で構成し、 さらに、上記シャンク部を、 Cr:10〜25重量%、 Fe:5〜15重量%、を含有し、残りがNiと不可避
不純物からなる組成を有するNi合金で構成したことを
特徴とする基体割れやろう付け剥離の発生のないICチ
ップのリード材ボンディング用圧接工具。
2. A pressure welding tool having a structure in which a tool body formed by vapor-phase synthetic deposition of a polycrystalline diamond film on a surface of a base is joined to a shank portion containing a heater using a brazing material. , A carbon nitride solid solution of Ti and W (where W is 5 to 40% by weight based on the total amount of Ti): 5 to 60% by weight, with the balance being tungsten carbide and inevitable impurities. And a brazing material comprising: Ag: 5 to 15% by weight, P: 1 to 10% by weight, and Ti and / or Zr: 0.5 to 10% by weight. %, The balance being Cu and a composition consisting of unavoidable impurities
the shank portion is made of a Ni alloy containing Cr: 10 to 25% by weight, Fe: 5 to 15% by weight, and the balance being composed of Ni and unavoidable impurities. A pressure welding tool for bonding a lead material of an IC chip, which is free from cracking of a substrate and peeling of a braze.
JP19966297A 1997-07-25 1997-07-25 Pressure welding tool for IC chip lead material bonding Expired - Fee Related JP3275786B2 (en)

Priority Applications (1)

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JP19966297A JP3275786B2 (en) 1997-07-25 1997-07-25 Pressure welding tool for IC chip lead material bonding

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Application Number Priority Date Filing Date Title
JP19966297A JP3275786B2 (en) 1997-07-25 1997-07-25 Pressure welding tool for IC chip lead material bonding

Publications (2)

Publication Number Publication Date
JPH1145915A JPH1145915A (en) 1999-02-16
JP3275786B2 true JP3275786B2 (en) 2002-04-22

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Country Link
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9194189B2 (en) 2011-09-19 2015-11-24 Baker Hughes Incorporated Methods of forming a cutting element for an earth-boring tool, a related cutting element, and an earth-boring tool including such a cutting element

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