JP3266590B2 - Spin valve sensor with multiple hard magnetic bias layers - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a spin valve valve.
High coercivity multi-layer hard magnetic layers that magnetically stabilize the sensor, and in particular, nickel oxide antiferromagnetic pinning layers that pin a pinned layer
r) a high coercivity multilayer hard magnetic layer on each side edge of the spin valve sensor having r).

[0002]

2. Description of the Related Art Spin valve sensors are used by read heads that sense a magnetic field on a moving magnetic medium, such as a rotating magnetic disk. The spin valve sensor includes a non-magnetic and conductive first spacer layer sandwiched between a ferromagnetic pinned layer and a ferromagnetic free layer. The antiferromagnetic pinned layer bounds the pinned layer and fixes the magnetic moment of the pinned layer at 90 ° with respect to the air bearing surface (ABS), the exposed surface of the sensor facing the magnetic medium. . First and second leads are connected to the spin valve sensor and conduct a sensing current. The magnetic moment of the free layer is free to rotate in the positive and negative directions from the zero bias point position in response to positive and negative magnetic fields from the moving magnetic medium. The zero bias position is when the sensor is stationary, i.e., when the sensed current is conducted through the sensor without magnetic field penetration from the rotating magnetic disk.
This is the position of the magnetic moment of the free layer. When the sensor is stationary, the magnetic moment is preferably parallel to the ABS. At rest, if the magnetic moment of the free layer is not substantially parallel to the ABS, there is asymmetry in the read signal when positive and negative magnetic fields penetrate from the rotating disk.

[0003] The thickness of the spacer layer is selected to be smaller than the mean free path of electrons conducted through the sensor. According to this configuration, some of the conduction electrons are scattered by the interface between the spacer layer and the pinned layer and the free layer. Scattering is minimal when the magnetic moments of the pinned and free layers are parallel to each other and maximal when their magnetic moments are antiparallel. The change in scattering changes the resistance of the spin valve sensor as a function of cosθ. Where θ is the angle between the magnetic moment of the pinned layer and the free layer. Spin valve sensors have much higher magnetoresistance (MR) than anisotropic magnetoresistance (AMR) sensors
With coefficients. For this reason, spin valve sensors are sometimes called giant magnetoresistive (GMR) sensors.

[0004] The layer of the spin valve sensor is generally A
Form first and second side edges perpendicular to the BS. First and second hard magnetic bias layers (hard bias layers) and lead layers are coupled to the first and second side edges of the sensor. The first and second lead layers conduct sensing current through the sensor, and the first and second hard magnetic bias layers stabilize magnetic domains of various magnetic layers of the sensor. The magnetic domains have magnetic moments that are aligned along the direction of the internal magnetic spin. Domains border each other along domain walls that are not stable and are randomly arranged. When a magnetic intrusion occurs, the domain walls move, and upon disappearance of the magnetic intrusion, the domain walls may not return to their original position, or may move subsequently when the sensor senses the magnetic intrusion from the rotating disk. . When the domain walls do not return to their same position, this imposes a different magnetic bias on the free layer, making the read signal asymmetric. Furthermore, as the domain wall moves during a read cycle, this imposes noise on the signal. First and second hard magnetic bias layers apply a magnetic field to the sensors, which stabilizes them by blocking the movement of the domain walls of the free layer of the sensor.

[0005] A typical material used for the first and second hard magnetic bias layers is cobalt platinum chromium (CoPtCr). This material is a hard magnetic material with high coercivity. A high coercivity is preferred to provide a magnetic field that stabilizes the sensor and to stabilize the first and second hard magnetic bias layers. When the first and second hard magnetic bias layers are exposed to a magnetic field that exceeds their coercivity, the atomic spins of the hard magnetic bias layers switch their position in the direction of the magnetic field. These fields come from the write field of the write head or from the rotating magnetic disk. Of particular concern are those components of these fields that are perpendicular to the ABS.
In order to realize a spin valve read head, a hard magnetic bias layer having high coercivity is desired.

[0006]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a high coercivity hard magnetic bias layer for stabilizing the magnetic domain of a bottom spin valve sensor over a portion of a nickel oxide (NiO) pinned layer. It is to provide.

Another object of the present invention is to provide a seed layer that promotes the high coercivity of the spin valve sensor, thereby providing a portion of the nickel oxide (NiO) pinned layer of the bottom spin valve sensor. And stabilizing the cobalt (Co) -based hard magnetic bias layer disposed thereon.

It is a further object of the present invention to provide a nickel oxide for a bottom spin valve sensor by providing a substantially 45 ° thick seed layer that promotes the high coercivity of the spin valve sensor. The stabilization of the cobalt (Co) based hard magnetic bias layer, which is located on the extension of the (NiO) pinned layer.

Yet another object of the present invention is to provide a minimum thickness, high coercivity hard magnetic bias layer that stabilizes the bottom spin valve sensor.

[0010] Other objects and advantages of the present invention will become apparent from the following description, taken in conjunction with the accompanying drawings.

[0011]

Means for Solving the Problems The present inventor has proposed a method of forming
It has been discovered that the coercivity of platinum chromium (CoPtCr) is significantly reduced in the bottom spin valve read head. In the bottom spin valve read head, a nickel oxide (NiO) layer is used as the antiferromagnetic pinning layer. The nickel oxide (NiO) pinning layer has first and second portions that extend beyond a side edge of the spin valve sensor. First and second cobalt
Platinum chrome (CoPtCr) hard magnetic bias layers are disposed on the first and second portions of the nickel oxide (NiO) pinned layer. Even when a chromium seed layer is used between the first and second portions of the nickel oxide (NiO) layer and the first and second cobalt platinum chromium (CoPtCr) hard magnetic bias layers. Also the first
And second cobalt platinum chromium (CoPtC
r) The coercivity of the hard magnetic bias layer is significantly reduced due to the presence of the nickel oxide (NiO) pinning layer.
We have found that a free layer of 72 ° and a chrome (C
r) maintaining the saturation of the first and second cobalt platinum chromium (CoPtCr) hard magnetic bias layers in the 135 ° first and second cobalt platinum chromium (CoPtCr) hard magnetic bias layers on the seed layer; The magnetic force was found to be about 650 Oe. Although this coercivity is acceptable, the free layer and the first and second cobalt platinum chromium (CoPtC) may be used to increase the track read linear density of the spin valve read head.
r) It becomes worse when the thickness of the hard magnetic bias layer is reduced. For example, the thickness of the free layer is reduced to 45 ° and 35 °
When the thickness of the first and second cobalt platinum chromium (CoPtCr) hard magnetic bias layers on the first and second chromium layers is reduced to 75 °, the coercivity is 55
It decreases to 0 Oe.

The inventor of the present invention has provided first and second cobalt platinum chromium (CoPtCr) hard magnetic bias layers,
First and second Cobalt Platinum Chromium (CoPtCr) hard magnets by using a two-layer seed layer of tantalum (Ta) and chromium (Cr) between the first and second nickel oxide (NiO) layer portions The coercivity of the bias layer was found to increase significantly. For example, a 45 ° free layer, and 35 ° first and second seed layers of tantalum (Ta) on first and second nickel oxide (NiO) layer portions, and first and second tantalum (Ta). 35Å on the layer
First and second chromium (Cr) layers, and first and second
Saturation of the first and second cobalt platinum chromium (CoPtCr) hard magnetic bias layers in the first and second cobalt platinum chromium (CoPtCr) hard magnetic bias layers of 75 ° on the chromium (Cr) layer of The coercivity is
It increased to 900 Oe. In addition, the inventors have found that even though the thickness of both seed layers is reduced, the substantially identical saturation preservation is still achieved in the 75 ° first and second cobalt platinum chromium (CoPtCr) hard magnetic bias layers. Discovered that magnetic force can be achieved.

The inventor of the present invention has found that when the thickness of each seed layer is 20 °, the coercivity of the 75 ° first and second cobalt platinum chromium (CoPtCr) hard magnetic bias layers is:
I still found it to be 900 Oe. First and second
This reduced thickness of the hard magnetic bias layer reduces the step between the sensor and the hard magnetic bias layer and the lead layer since the hard magnetic bias layer and the lead layer are generally thicker than the spin valve sensor. This reduced step ensures a better coverage of the second gap layer to protect the read head from short circuits between the second shield layer and the read layer. The invention is applicable to both simple bottom spin valves and anti-parallel (AP) pinned bottom spin valves. Anti-parallel pinned layers are disclosed in US Pat.
As described in 01223, ruthenium (Ru) is provided between the first and second cobalt (Co) films.

[0014]

BRIEF DESCRIPTION OF THE DRAWINGS The same reference numbers are used throughout the drawings to indicate the same or similar elements. 1 to 3 show the magnetic disk drive 30. FIG. The drive 30 includes a spindle 32 that supports and rotates a magnetic disk 34. The spindle 32 is rotated by a motor 36 controlled by a motor control device 38. A combined read / write magnetic head 40 is mounted on a slider 42 supported by a suspension 44 and an actuator arm 46. Multiple disks, sliders and suspensions can be used in mass direct access storage devices (DASD), as shown in FIG. The suspension 44 and the actuator arm 46 position the slider 42 so that the magnetic head 40 has a transducing relationship with the surface of the magnetic disk 34.
When the disk 34 is rotated by the motor 36, the slider 42 moves a thin (typically 0.05 μm) air between the surface of the disk 34 and the air bearing surface (ABS) 48.
m) Supported on cushions (air bearings).
The magnetic head 40 is then used to write information to and read information from a plurality of annular tracks on the surface of the disk 34. The processing circuit 50 exchanges signals representing such information with the magnetic head 40, provides a motor drive signal for rotating the magnetic disk 34, and provides control signals for moving the slider to various tracks. FIG. 4 shows the slider 42 attached to the suspension 44. The above components are mounted on a frame 54 of a housing 55, as shown in FIG.

FIG. 5 shows a slider 42 and a magnetic head 40.
2 shows the ABS of FIG. The slider includes a central rail 56 that supports the magnetic head 40, and slide rails 58 and 60.
Having. Rails 56, 58 and 60 extend from cross rail 62. With respect to the rotation of the magnetic disk 34,
The cross rail 62 is located at the front edge 64 of the slider,
The magnetic head 40 is located at the trailing edge 66 of the slider.

FIG. 6 shows a write head portion 7
FIG. 4 is a side cross-sectional view of a magnetic head 40 having a zero and a read head portion 72, wherein the read head portion 72 uses a spin valve sensor 74 of the present invention. FIG. 7 shows FIG.
It is a figure which shows ABS. Spin valve sensor 74
Is disposed between the first and second gap layers 76 and 78, and these gap layers are disposed between the first and second shield layers 80 and 82. In response to an external magnetic field, the resistance of the spin valve sensor 74 changes. The sense current I _S conducted through the sensor manifests these resistance changes as potential changes. Then, these potential changes are processed by the processing circuit 50 shown in FIG.
Processed as a readback signal.

The conventional write head portion of the magnetic head is
It includes a coil layer 84 disposed between the first and second insulating layers 86 and 88. A third insulating layer 90 may be used to planarize the head so as to remove undulations in the second insulating layer caused by the coil layer 84. The first, second and third insulating layers may comprise an "insulation stack"
Called. The coil layer 84 and the first, second and third insulating layers 86, 88 and 90 are located between the pole piece layers 92 and 94. The first and second pole piece layers 92 and 94
Magnetically coupled at the rear gap 96 and
Separated by the write gap layer 102 in S,
It has first and second pole tips 98 and 100. As shown in FIGS. 2 and 4, first and second solder connections 1
04 and 116 transfer leads from spin valve sensor 74 to leads 112 and 1 on suspension 44.
24. Third and fourth solder connections 118 and 106 connect leads 120 from coil 84 (see FIG. 8).
And 122 are connected to leads 126 and 114 on suspension 44. Here, the magnetic head 40 uses a single layer 82/92, which acts as a second shield layer for the read head and at the same time acts as a first pole piece for the write head, with a dual function. This type of magnetic head is called a "merged head". Piggyback heads, on the other hand, use two separate layers for these functions.

FIG. 9 is a perspective view of the ABS of the bottom spin valve read head 200. Spin valve sensor 202 is a bottom simple spin valve sensor or a bottom anti-parallel (AP) pinned spin valve sensor, which is described in more detail below. Bottom spin
In the valve sensor, the antiferromagnetic (AFM) pinning layer 2
04 bounds a ferromagnetic pinned layer (described below) in the spin valve sensor 202 and fixes the magnetic moment of the pinned layer perpendicular to the ABS. In the present invention, nickel oxide (NiO) is used as the pinning layer 204.

Spin valve including pinned layer 204
The sensor 202 includes first and second non-magnetic and non-conductive gap layers 2 such as aluminum oxide (Al ₂ O ₃ ).
06 and 208. The first and second gap layers 206 and 208 are made of first and second ferromagnetic shield layers 210 and 2 such as nickel iron or sendust.
12 are arranged. First and second shield layers 210
And 212 determine the read gap of read head 200. Efforts to reduce the gap are ongoing and read heads have improved read bit line density capability. This is achieved by reducing the thickness of the layer between the first and second shield layers 210 and 212.

The spin valve sensor 202 includes an ABS
And first and second side edges 214 and 216 that are perpendicular to. First and second hard magnetic bias layers and lead layer 21
8 and 220 are the first of the spin valve sensor 202.
And at the interface with the second side edges 214 and 216, which are referred to as contiguous junctions, as described in U.S. Pat. No. 5,018,037. First hard magnetic bias layer and lead layer 218
Has a first multi-layer hard magnetic bias layer 222 and a multi-layer first lead layer 224, and the second hard magnetic bias layer and lead layer 220 include a second multi-layer hard magnetic bias layer 226 It has a multi-layer second lead layer 228. Each of the hard magnetic bias layers 222 and 226 includes a high coercivity hard magnetic film that stabilizes the magnetic domains of the spin valve sensor 202 by longitudinally biasing the magnetic layers of the spin valve sensor 202. The hard magnetic film fixes the magnetic spins of the magnetic domains in a common direction, so that the domain wall at the magnetic domain interface does not shift and the bias point of the free layer of the spin valve sensor changes or the noise on the read signal is reduced. Avoid adoption.

The inventor has determined that when the hard magnetic films of the hard magnetic bias layers 222 and 226 are disposed on the first and second portions of the pinned layer 204 that extend beyond the sensor, the saturation of the hard magnetic films It has been found that the coercive force is significantly reduced. The problem is that the thickness of the hard magnetic films of the hard magnetic bias layers 222 and 226 decreases as the thickness of the free layer of the spin valve sensor 202 decreases in order to increase the read linear density of the magnetic head. Sometimes it gets worse. In addition, the first and second side edges 21 of the spin valve sensor 202
A hard magnetic bias layer between the first and second hard magnetic bias layers and the lead layers 218 and 220 adjacent to the hard magnetic bias layer and the free layer step adjacent to the first and second hard magnetic bias layers. It is necessary to reduce the thickness of the hard magnetic films 222 and 226 as much as possible. Steps at these locations may result in poor coverage by the second gap layer 208 and therefore may not prevent a short circuit between the first and second lead layers 224 and 228 and the second shield layer 212. . The present inventor has proposed a hard magnetic bias layer 222.
Certain membranes having reduced thickness as and 226
It has been discovered that the spin valve sensor can be stabilized without sacrificing coercivity.

FIG. 10 shows a first embodiment 300A of a bottom simple spin valve sensor on the first gap layer 206.
It is a figure which shows ABS. Spin valve sensor 30
0A is the side edge 306 and 3 of the spin valve sensor.
08 and the first and second portions 302 and 3
And a pinning layer 204 having the same. A non-magnetic and non-conductive spacer layer 310 is
And the ferromagnetic free layer 314. Cap layer 3
16 may be disposed on the free layer 314. For example, the pinned layer 204 is 425 ° nickel oxide (NiO) and the pinned layer 312 is 10 ° nickel iron (NiF).
e), and the GMR enhancement layer 313 is 15 °
Of cobalt (Co), and the spacer layer 310 has a thickness of 20 °.
The free layer 314 is made of 72 ° nickel-iron (NiFe), and the cap layer 316 is made of 50 ° tantalum (Ta).

In order to increase the read line density of the read head, efforts are continuously being made to reduce the thickness of the free layer 314 in FIG. FIG.
FIG. 3B illustrates an embodiment 300B of a bottom simple spin valve sensor using a ferromagnetic free layer of thickness of 300 mm. The thickness of the free layer,
Reducing from 72 ° in FIG. 10 to 45 ° in FIG.
This poses the challenge of providing a correspondingly thin hard magnetic bias layer, and this hard magnetic bias layer is not switched by any magnetic field having a strength exceeding its coercive force, and thus is not necessary for the spin valve sensor. It must have sufficient coercivity to bias the magnetic layer in the longitudinal direction. The present invention described in detail below provides such a hard magnetic bias layer.

FIG. 12 shows a bottom anti-parallel (AP) pinned spin valve sensor 400A disposed on the first gap layer 206. The anti-parallel pinned spin valve sensor 400A includes a pinned layer 402 of nickel oxide (NiO). The spin valve sensor further includes a non-magnetic and non-conductive spacer layer 404 disposed between the anti-parallel pinned layer 406 and the free layer 408.
A cap layer 410 may be disposed on the free layer 408. The antiparallel pinned layer 406 comprises a spacer layer 4 disposed between the first and second ferromagnetic pinned films 414 and 416.
12 inclusive. The first pinned layer 4 enhances the exchange coupling.
A ferromagnetic interfacial film 418 may be disposed between the first pinned film 414 and the pinned layer 402 to pin the magnetic moment of 14 in a direction perpendicular to the ABS. The exchange coupling between the second pinned film 416 and the first pinned film 414 fixes the second pinned film 416 antiparallel to the first pinned film 414. For example, the pinning layer is 425 ° nickel oxide (NiO), the interface film 418 is 10 ° nickel iron (NiFe),
The pinned film 414 is 20 ° cobalt (Co), the spacer layer 412 is 8 ° ruthenium (Ru), and the second pinned film 416 is 20 ° cobalt (C).
o), the spacer layer 404 is 20 ° copper (Cu) and the free layer 408 is 72 ° nickel iron (NiFe).
And the spacer layer 410 is made of 50 ° tantalum (Ta).
It is.

Efforts are continuously being made to reduce the thickness of the free layer 408 in FIG. FIG. 13 shows a bottom antiparallel pinned spin valve sensor 400 having a free layer 420 whose thickness has been reduced to 45 °.
B is shown. Again, the challenge in this case is to longitudinally bias the free layer of the spin valve sensor of FIG. 13 with sufficient coercivity so that the external magnetic field does not switch the direction of magnetic spin in the hard magnetic bias layer. It is to provide a hard magnetic bias layer.

Several studies were performed to determine the coercivity of various hard magnetic bias layers of cobalt platinum chromium (CoPtCr) having one or more seed layers. In addition, cobalt platinum chromium (Co) when the bottom spin valve sensor is reduced to 45 °
Considerations have been made to determine the minimum thickness of the seed layer for the (PtCr) hard magnetic bias layer. These considerations will be described in examples below.

Example 1: Initial considerations relate to an anisotropic magnetoresistive (AMR) sensor 500 that differs from a spin valve sensor in that there is no pinned layer. In an AMR sensor, a single nickel-iron (NiFe) layer changes its resistance in response to magnetic flux penetration from a rotating magnetic disk. As shown in FIG. 14, the AMR sensor 500
Is disposed on the first gap layer 502 of aluminum oxide (Al ₂ O ₃ ). First and second hard magnetic layers 504
And 506 comprise first and second seed layers 508 and 51
0 separates it from the first gap layer 502. Each of the hard magnetic layers 504 and 506 is 135 ° of cobalt platinum chromium (CoPtCr), and the seed layers 508 and 510 are 35 ° of chromium (Cr).
The first seed layer 508 is formed by the first hard magnetic layer 504 and the AM layer.
The second sensor is disposed between the first side edge portion 512 of the R sensor and the second side edge portion.
It can be seen that the seed layer 510 is disposed between the second hard magnetic layer 506 and the second side edge 514 of the AMR sensor. Accordingly, the hard magnetic layers 504 and 506 are magnetostatically coupled to the magnetic layers of the AMR sensor 500. It is this coupling that stabilizes the magnetic domains of the AMR sensor. In this example, the coercivity of the first and second hard magnetic layers 504 and 506 was 1400 Oe. This is the hard magnetic layer 504
And 506, which is higher than the expected strength of the magnetic field penetration applied to it, which is a desirable level for the coercivity. In this example, chromium (C) on an aluminum oxide (Al ₂ O ₃ ) layer
r) indicates that the coercivity of the hard magnetic layers 504/506 on the layers 508/510 has a well-tolerated coercivity. However, this coercivity is significant when a nickel oxide (NiO) antiferromagnetic pinned layer is used to pin the pinned layer of the spin valve sensor as described in the examples below. Reduced.

EXAMPLE 2 In this example, the simple spin valve 300A of FIG. 10 with the free layer having a thickness of 72 ° and the antiparallel pinned spin valve 400A of FIG. 300A and 400A
Is shown generally in FIG. Pinning layer 204 or 402 is 425 ° nickel oxide (NiO). The pinning layer is a spin valve sensor 300A /
It has first and second portions that extend beyond the side edges 600 and 602 of the 400A. First and second hard magnetic layers 6
Nos. 04 and 606 are 135% cobalt platinum chromium (CoPtCr) and hard magnetic layers 604 and 60
The first and second seed layers 608 and 610 between 6 and the pinned layer extensions 204/402 are 35 ° chromium (Cr). First and second hard magnetic layers 604 and 6
The coercivity of 06 was 650 Oe. Hard magnetic layer 6
The coercivity of the nickel oxide (Ni
O). It can be seen that their location on the pinned layers 204/402 dramatically reduced from 1400 Oe in Example 1. This level of coercivity can still withstand magnetic flux penetration that tends to rotate the coercivity of the hard magnetic layer, but will be shown in the examples below when the thickness of the free layer is reduced to 72 ° or less. Problems arise.

EXAMPLE 3 In this example (FIG. 16), the spin valve sensors 300B and 400B of FIGS. 11 and 13 having a free layer of 45 ° thickness were considered. The pinning layers 204/402 are made of 425 ° nickel oxide (Ni
O). First and second hard magnetic layers 700 and 702
Is a 75% cobalt platinum chrome (CoPtC
r) the first and second seed layers 704 and 706
Is 35% chromium (Cr). Unfortunately, the first
And the coercivity of the second hard magnetic layers 700 and 702 are
From 650 Oe in Example 3, it decreased to 550 Oe in this example. This level of coercivity is due to the hard magnetic layers 700 and 7
02 is considered too low to withstand the flux penetration that tends to switch the magnetic spin.

Example 4: In this example (FIG. 17), spin valve sensors 300B and 400B having a free layer of 45 ° thickness were again considered. The spin valve sensor includes a 425 ° nickel oxide (NiO) pinned layer 204/402. First and second hard magnetic layers 800
And 802 are 75 ° Cobalt Platinum Chromium (CoPtCr) and the first and second seed layers 80
4 and 806 are 35 ° chromium (Cr). The inventor has determined that the first and second chromium seed layers 804 and 8
06 and nickel oxide (NiO) / pinning layer 204 /
It has been found that the addition of 35 ° tantalum (Ta) first and second seed layers 808 and 810 between the hard magnetic layers 800 and 802 significantly increases the coercivity of the hard magnetic layers 800 and 802. The coercivity of the hard magnetic layers 800 and 802 is 900 Oe, which is 550 Oe of Example 3.
Is a big increase from. However, the total thickness of the 70 ° of the two-layer seed layer is limited to the hard magnetic bias layers 800 and 8
By bringing 02 closer to the free layer (F), it can be further reduced to obtain more efficient magnetostatic coupling between them.

Example 5: Spin valve sensor 300B /
400B was further investigated in a 45 ° thick free layer, as shown in FIG. The spin valve sensor includes a 425 ° nickel oxide (NiO) pinned layer 204/402. First and second hard magnetic layers 90
0 and 902 are 75% cobalt platinum chromium (CoPtCr) and the first and second seed layers 90
Nos. 4 and 906 are 20% chromium (Cr),
And the fourth seed layers 908 and 910 are 20 ° tantalum (Ta). Chrome (Cr) and tantalum (T
The total thickness of the seed layer in a) is 40 °. The coercivity of the first and second hard magnetic layers 900 and 902 was 900 Oe, which is the same as the coercivity of Example 4. This is well tolerated as a hard magnetic layer, and effectively stabilizes the magnetic domain of the spin valve sensor and can withstand magnetic intrusion from an external magnetic field.

FIGS. 19-23 illustrate the various steps of forming part of a spin valve read head. FIG.
At 9, a first gap layer 1000 is sputter deposited on a first shield layer (not shown). Next, a nickel oxide (NiO) layer 1002 is formed on the first gap layer 1000.
Sputter deposited on top. Next, a plurality of layers 1004 are sputter deposited onto the pinned layer 1002 and the spin valve sensor 300B or 400 of FIG. 11 or FIG.
Form one of B. In FIG. 20, the undercut 100
A two-layer photoresist having 8 and 1010 is formed on the spin valve sensor layer (SV layer) 1004,
In a subsequent step, unwanted layers are lifted off.
In FIG. 21, ion milling removes the layers of the spin valve sensor except below the two-layer photoresist 1006. This also slightly mills in the pinned layer 1002, ensuring complete removal of the spin valve sensor layer 1004 beyond the sensor area. In FIG. 22, various layers of a hard magnetic bias layer and a lead layer are sputter deposited on a substrate. In FIG. 23, two-layer photoresist 1
006 is removed, thereby removing (listing off) the unwanted layers, leaving behind the completed hard magnetic bias and lead layers bonded to the side edges of the spin valve sensor. This process is described in US Pat.
No.

The hard magnetic material may be a material other than cobalt platinum chromium (CoPtCr), and may be any cobalt-based material such as cobalt platinum (CoPt) or cobalt platinum chromium tantalum (CoPtCrTa). It is intended to include hard magnetic materials.

In summary, the following matters are disclosed regarding the configuration of the present invention.

(1) A spin valve read head having an air bearing surface (ABS), comprising: a first non-magnetic and non-conductive gap layer; and an anti-ferromagnetic layer on the first gap layer. A nickel oxide (NiO) pinned layer, a ferromagnetic pinned layer exchange coupled to the pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer between the pinned layer and the free layer, A spin valve comprising: a pinned layer; the spacer layer; and first and second end edges formed by end edges of the free layer.
A sensor, first and second portions of the pinned layer extending beyond the first and second end edges of the spin valve sensor, respectively, and the first of the pinned layers.
And first and second hard magnetic bias layers and a lead layer overlying each of the second portions and coupled at the interface, wherein each of the first and second hard magnetic bias layers comprises:
At the interface with the pinned layer, the spin valve
A tantalum (Ta) film coupled at an interface with each of the first and second end edges of the sensor;
a) a chromium (Cr) film on the film and bonded at the interface with the tantalum film; and a cobalt (Co) -based hard film on the chromium (Cr) film and bonded at the interface with the chromium film. A read head comprising: a magnetic film; (2) a ferromagnetic first shield layer, the first gap layer on the first shield layer, the spin valve sensor, the first and second hard magnetic bias layers, and a lead layer And (2) a non-magnetic and non-conductive second gap layer on the first gap layer and a ferromagnetic second shield layer on the second gap layer. Read head. (3) The pinned layer is an anti-parallel (AP) pinned layer, and first and second ferromagnetic films and ruthenium (Ru) sandwiched between the first and second ferromagnetic films. And a spacer film, wherein the first ferromagnetic film is bounded by the pinned layer, the magnetic moment of the first ferromagnetic film is fixed in the first direction by the pinned layer, and the second ferromagnetic film is The read head according to (1) or (2), which is bounded by a spacer layer, and whose magnetic moment is fixed in a second direction antiparallel to the first direction by the first ferromagnetic film. . (4) the cobalt (Co) -based hard magnetic film is selected from a group including cobalt platinum chromium (CoPtCr), cobalt platinum (CoPt), and cobalt platinum chromium tantalum (CoPtCrTa); The read head according to any one of (1) to (3). (5) In each hard magnetic bias layer, the tantalum (T
a) the read head of (4), wherein the thickness of each of the film and the chromium (Cr) film is at least 20 °; (6) A magnetic head having an air bearing surface (ABS), comprising: a first ferromagnetic shield layer; a first nonmagnetic and nonconductive gap layer on the first shield layer; A read head including an antiferromagnetic nickel oxide (NiO) pinned layer on the first gap layer; a ferromagnetic pinned layer exchange coupled to the pinned layer; First and second ends formed by a free layer, a non-magnetic spacer layer between the pinned layer and the free layer, and end edges of the pinned layer, the spacer layer, and the free layer; A spin valve sensor, the spinning pin sensor comprising:
A first and a second portion of the pinned layer extending beyond the first and second end edges of the valve sensor, respectively, the first and second portions of the pinned layer; A first and a second on top of each other and joined at the interface
Wherein each of the first and second hard magnetic bias layers is coupled at an interface with the pinned layer and the first and second hard magnetic bias layers of the spin valve sensor. A tantalum (Ta) film bonded to each of the end edges at the interface, and on the tantalum (Ta) film,
A chromium (Cr) film bonded at the interface with the tantalum film, and a cobalt (Co) -based hard magnetic film on the chromium (Cr) film bonded at the interface with the chromium film;
A second nonmagnetic and nonconductive gap layer on the spin valve sensor, the first and second hard magnetic bias layers and the lead layer, and the first gap layer; A second ferromagnetic shield layer on the gap layer and a write gap layer, separated by the write gap at the ABS;
An insulating stack having first and second pole piece layers, at least first and second insulating layers, and at least one coil embedded within the insulating stack, connected at a rearward gap recessed from the S Layers and
A write head, wherein the insulating stack and the at least one coil layer are disposed between the first and second pole pieces. (7) The pinned layer is an antiparallel (AP) pinned layer, and first and second ferromagnetic films and ruthenium (Ru) sandwiched between the first and second ferromagnetic films. And a spacer film, wherein the first ferromagnetic film is bounded by the pinned layer, the magnetic moment of the first ferromagnetic film is fixed in the first direction by the pinned layer, and the second ferromagnetic film is The magnetic head according to (6), wherein the magnetic moment is fixed in a second direction antiparallel to the first direction by a boundary between the spacer layer and the first ferromagnetic film. (8) the cobalt (Co) -based hard magnetic film is selected from a group including cobalt platinum chromium (CoPtCr), cobalt platinum (CoPt), and cobalt platinum chromium tantalum (CoPtCrTa); The magnetic head according to (6) or (7). (9) In each hard magnetic bias layer, the tantalum (T
a) The magnetic head according to (8), wherein the thickness of each of the film and the chromium (Cr) film is at least 20 °. (10) A magnetic disk drive including at least one magnetic head having an air bearing surface (ABS), the magnetic head including a combined read head and a write head, wherein the read head is a ferromagnetic head. First
A non-magnetic and non-conductive first gap layer on the first shield layer, and an antiferromagnetic nickel oxide (NiO) pinning layer on the first gap layer. Further comprising: a ferromagnetic pinned layer exchange coupled to the pinned layer; a ferromagnetic free layer; a non-magnetic spacer layer between the pinned layer and the free layer; A spin valve sensor comprising a first layer, a spacer layer, and first and second end edges formed by end edges of the free layer, wherein the pinned layer comprises the spin valve. • having first and second portions of the pinned layer extending beyond the first and second end edges of the sensor, respectively, the first of the pinned layers;
And a first hard magnetic bias layer and a lead layer overlying each of the second portions and coupled at the interface, wherein each of the first and second hard magnetic bias layers is A tantalum (Ta) film coupled at an interface with a pinned layer and coupled at an interface with each of the first and second end edges of the spin valve sensor;
a) a chromium (Cr) film on the film and bonded at the interface with the tantalum film; and a cobalt (Co) -based hard film on the chromium (Cr) film and bonded at the interface with the chromium film. A magnetic film, the spin valve sensor, the first and second hard magnetic bias layers and the lead layer, and a nonmagnetic and nonconductive second gap layer on the first gap layer. And a second ferromagnetic layer on the second gap layer.
And a first and second write head, the write head being separated by the write gap at the ABS and connected at a rear gap recessed rearward from the ABS in the head. A pole piece layer, an insulating stack having at least first and second insulating layers, and at least one coil layer embedded in the insulating stack, wherein the insulating stack and the at least one coil layer are the first and second coil layers. A housing and a magnetic disk rotatably supported within the housing, wherein the second shield layer and the first pole piece layer are a common layer disposed between the first and second pole pieces; The magnetic head is provided in the housing, and the magnetic head has its A A support member for supporting the magnetic disk so that the magnetic disk faces the magnetic disk, a means for rotating the magnetic disk, and a positioning means coupled to the support member for moving the magnetic head to a plurality of positions with respect to the magnetic disk And processing means coupled to the magnetic head, the rotating means, and the positioning means, for exchanging signals with the combined magnetic head, controlling movement of the magnetic disk, and controlling the position of the magnetic head. , Magnetic disk drives. (11) The pinned layer is an antiparallel (AP) pinned layer, and first and second ferromagnetic films and ruthenium (Ru) sandwiched between the first and second ferromagnetic films. And a spacer film, wherein the first ferromagnetic film is bounded by the pinned layer, the magnetic moment of the first ferromagnetic film is fixed in the first direction by the pinned layer, and the second ferromagnetic film is The disk drive according to (10), wherein the magnetic moment is fixed in a second direction antiparallel to the first direction by the first ferromagnetic film, which borders a spacer layer. (12) The hard magnetic film based on cobalt (Co)
The disk drive according to (10) or (11), wherein the disk drive is selected from the group comprising cobalt platinum chrome (CoPtCr), cobalt platinum (CoPt), and cobalt platinum chrome tantalum (CoPtCrTa). (13) A method for forming a magnetic head having an air bearing surface (ABS), comprising: forming a ferromagnetic first shield layer;
Forming a non-magnetic and non-conductive first gap layer; and forming an antiferromagnetic nickel oxide (NiO) pinning layer on the first gap layer;
Forming a spin valve sensor, comprising:
Forming a ferromagnetic pinned layer exchange coupled to the pinned layer; forming a non-magnetic spacer layer on the pinned layer; and a ferromagnetic free layer on the spacer layer. Forming the first and second end edges of the pinned layer, the spacer layer and the free layer, the first and second ends of the spin valve sensor. Forming first and second portions of the pinned layer extending beyond respective end edges; and bonding interfacially over each of the first and second portions of the pinned layer. Forming a first and a second hard magnetic bias layer and a lead layer,
The step of forming each of the first and second hard magnetic bias layers is coupled at the interface with the pinned layer and interfaces with each of the first and second end edges of the spin valve sensor. Forming a tantalum (Ta) film bonded by the following steps: forming a chromium (Cr) film on the tantalum (Ta) film bonded to the tantalum film at an interface; and forming the chromium (Cr) film. Forming a cobalt (Co) -based hard magnetic film at the interface with the chromium film, the spin valve sensor, the first and second hard magnetic bias layers, Forming a nonmagnetic and nonconductive second gap layer on the lead layer and the first gap layer; and forming a ferromagnetic second shield layer on the second gap layer. Step If, as the second shield layer functions as a first pole piece of the write head,
Forming, on the second shield layer, a write gap layer and an insulating stack having a coil layer embedded therein; and, over the insulating stack and the write gap, the first pole piece at a back gap. Forming a second pole piece layer coupled to the second pole piece layer. (14) forming the first ferromagnetic film on the first shield layer, wherein the pinned layer is an antiparallel (AP) pinned layer; (13). The method according to (13) above, wherein the method includes a step of forming a ruthenium (Ru) spacer film on the substrate and a step of forming a second ferromagnetic film on the spacer film. (15) The cobalt (Co) -based hard magnetic film comprises:
The method according to (13) or (14), wherein the method is selected from the group comprising cobalt platinum chromium (CoPtCr), cobalt platinum (CoPt) and cobalt platinum chromium tantalum (CoPtCrTa). (16) In each of the hard magnetic bias layers, the thickness of each of the tantalum (Ta) film and the chromium (Cr) film is at least 20 °, and the thickness of the free layer is at least 45 °. The described method. (17) A method for forming a magnetic disk drive including at least one magnetic head, which is a combined read / write head having an air bearing surface (ABS), wherein a first ferromagnetic shield layer is formed. Steps to
On the first shield layer, a non-magnetic and non-conductive first
Forming a gap layer, forming an antiferromagnetic nickel oxide (NiO) pinning layer on the first gap layer, and forming a spin valve sensor. Forming a ferromagnetic pinned layer exchange coupled to the pinned layer; forming a non-magnetic spacer layer on the pinned layer and a ferromagnetic free layer on the spacer layer And the first of the pinned layer, the spacer layer and the free layer.
And forming a second end edge, wherein the first and second portions of the pinned layer extend beyond the first and second end edges, respectively, of the spin valve sensor. Forming, and forming first and second hard magnetic bias layers and a lead layer bonded at an interface on each of the first and second portions of the pinned layer, The step of forming each of the first and second hard magnetic bias layers is coupled at the interface with the pinned layer and interfaces with each of the first and second end edges of the spin valve sensor. Forming a tantalum (Ta) film bonded by the following steps: forming a chromium (Cr) film on the tantalum (Ta) film bonded to the tantalum film at an interface; and forming the chromium (Cr) film. above Forming a cobalt (Co) -based hard magnetic film bonded to the chromium film at the interface, the spin valve sensor, the first and second hard magnetic bias layers, and the lead layer. And the first
Forming a non-magnetic and non-conductive second gap layer on the second gap layer; forming a ferromagnetic second shield layer on the second gap layer; Forming a write gap layer and an insulating stack having a coil layer embedded therein over the second shield layer such that the shield layer functions as a first pole piece of the write head; Forming a second pole piece layer over the insulating stack and the write gap that is coupled to the first pole piece at a back gap; providing a housing; and rotatable magnetic disk within the housing. Supporting the magnetic head with the ABS in the housing so that the magnetic head is in a transducing relationship with the magnetic disk. Providing a support member for supporting the disk so as to face the disk, providing a means for rotating the magnetic disk, and coupled to the support member to move the magnetic head to a plurality of positions with respect to the magnetic disk. Providing a moving positioning means; coupled to the magnetic head, the rotating means, and the positioning means, for exchanging signals with the merged magnetic head, controlling movement of the magnetic disk, and positioning the magnetic head; Providing processing means for controlling the (18) forming the first ferromagnetic film on the first shield layer, wherein the pinned layer is an antiparallel (AP) pinned layer; (17). The method according to (17), wherein the method is formed by a process including a step of forming a ruthenium (Ru) spacer film and a step of forming a second ferromagnetic film on the spacer film. (19) The cobalt (Co) -based hard magnetic film comprises:
The method according to (17) or (18), wherein the method is selected from the group comprising cobalt platinum chromium (CoPtCr), cobalt platinum (CoPt) and cobalt platinum chromium tantalum (CoPtCrTa). (20) In each of the hard magnetic bias layers, the thickness of each of the tantalum (Ta) film and the chromium (Cr) film is at least 20 °, and the thickness of the free layer is at least 45 °. The described method.

[Brief description of the drawings]

FIG. 1 is a plan view of a general magnetic disk drive.

FIG. 2 is a plane 2 of FIG. 1 with the magnetic head indicated by a hidden line;
FIG. 3 is a side view of the slider, taken along line -2.

FIG. 3 uses a plurality of disks and magnetic heads;
FIG. 2 is an elevation view of a magnetic disk drive.

FIG. 4 is a perspective view of a general suspension system that supports a slider and a magnetic head.

FIG. 5 is a view showing the ABS of the slider along a plane 5-5 in FIG. 2;

FIG. 6 is a partial elevational view of the slider and the magnetic head along a plane 6-6 in FIG. 2;

7 is a diagram showing a portion ABS of the slider along the plane 7-7 of FIG. 6, showing the read and write elements of the magnetic head.

FIG. 8 is a view along plane 8-8 of FIG. 6, with all material on the coil layer removed.

FIG. 9 is a schematic perspective view of a current spin valve read head.

FIG. 10A shows an example of a bottom spin valve sensor having a 72 ° thick nickel iron (NiFe) free layer.
It is a top view of BS.

FIG. 11A illustrates an example of a bottom spin valve sensor having a 45 ° thick nickel iron (NiFe) free layer.
It is a top view of BS.

FIG. 12 is a top plan view of an ABS illustrating an example of an anti-parallel (AP) pinned bottom spin valve sensor having a 72 ° thick nickel iron (NiFe) free layer.

FIG. 13 is a top plan view of an ABS showing an example of an antiparallel (AP) pinned bottom spin valve sensor having a 45 ° thick nickel iron (NiFe) free layer.

FIG. 14 is a plan view of an ABS showing an anisotropic magnetoresistive (AMR) sensor having a hard magnetic bias film and a seed layer on a first gap layer (G1).

FIG. 15: ABS of a bottom spin valve sensor having a 72 ° thick nickel iron (NiFe) free layer and a hard magnetic bias layer and a seed layer on an extension of a nickel oxide (NiO) pinned layer. FIG.

FIG. 16 shows a bottom spin valve in which a 45 ° thick nickel iron (NiFe) free layer is used and the thickness of the hard magnetic bias layer on the nickel oxide (NiO) pinned layer extension is reduced. -It is a top view of ABS of a sensor.

FIG. 17 shows a 45 ° thick nickel iron (NiFe) free layer with a double seed layer used for the hard magnetic bias layer.
FIG. 9 is a plan view of the ABS of a bottom spin valve sensor having a hard magnetic bias layer on the surface of the substrate and a nickel oxide (NiO) pinning layer extension.

FIG. 18A illustrates one embodiment of a bottom spin valve sensor in which the overall thickness of the double seed layer is significantly reduced without sacrificing the coercivity of the hard magnetic bias layer.
It is a top view of BS.

FIG. 19 is an elevational view showing the layer formation step (SV layer deposition) for constructing a spin valve sensor having first and second hard magnetic bias layers and a seed layer coupled thereto. .

FIG. 20 is an elevation view showing a layer forming step (bilayer photoresist deposition) for constructing a spin valve sensor having first and second hard magnetic bias layers and a seed layer coupled thereto; It is.

FIG. 21 is an elevation view showing a layer formation step (definition of an SV layer) for configuring a spin valve sensor having first and second hard magnetic bias layers and a seed layer coupled thereto; .

FIG. 22 shows a layer forming step (adhesion of a hard magnetic bias layer and a lead layer) for forming a spin valve sensor having first and second hard magnetic bias layers and a seed layer coupled thereto. It is an elevation view.

FIG. 23 is an elevation view showing a layer formation step (removal of unnecessary layers, completion) for forming a spin valve sensor having first and second hard magnetic bias layers and a seed layer coupled thereto; FIG.

[Explanation of symbols]

Reference Signs List 30 magnetic disk drive 32 spindle 34 magnetic disk 36 motor 38 motor controller 40 combined read / write magnetic head 42 slider 44 suspension 46 actuator arm 48 air bearing surface (ABS) 50 processing circuit 54 frame 55 housing 56 center rail 58, 60 slide rail 62 cross rail 64 slider leading edge 66 slider trailing edge 70 write head portion 72 read head portion 74, 202 spin valve sensor 76, 78, 206, 208 gap layer 80, 82 , 210, 212 Shield layer 84 Coil layer 86, 88, 90 Insulation layer 92, 94 Pole piece layer 96 Back gap 98, 100 Pole tip 102 Write gap layer 104, 106, 116, 118 Connection 112,114,120,122,124,126 lead 200 bottom spin valve read head 204,402 pinned layer 206,208,502,1000 gap layer 210,212 ferromagnetic shield layer 214,216,306, 308 Side edge of spin valve sensor 218, 222, 226 Hard magnetic bias layer 220, 224, 228 Lead layer 310, 404, 412 Spacer layer 312 Ferromagnetic pinned layer 313 GMR enhancement layer 314 Ferromagnetic free layer 316 , 410 Cap layer 406 Anti-parallel pinned layer 408 Free layer 414, 416 Pinned film 418 Ferromagnetic interface film 500 Anisotropic magnetoresistive (AMR) sensor 504, 506, 604, 606, 700, 702, 8
00, 802, 900, 902 Hard magnetic layer 508, 510, 704, 706, 804, 806, 9
04, 906, 908, 910 Seed layer 512, 514 Side edge 1002 Nickel oxide (NiO) layer, pinned layer 1004 Spin valve sensor layer 1006 Bilayer photoresist 1008, 1010 Undercut

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-10-269531 (JP, A) JP-A-10-116403 (JP, A) JP-A-6-177453 (JP, A) (58) Field (Int.Cl. ⁷ , DB name) G11B 5/39

Claims (20)

(57) [Claims] 1. A spin valve read head having an air bearing surface (ABS), comprising: a first non-magnetic and non-conductive gap layer; and an anti-ferromagnetic oxidation on the first gap layer. Nickel (N
iO) a pinned layer, a ferromagnetic pinned layer exchange-coupled to the pinned layer, a ferromagnetic free layer, a nonmagnetic spacer layer between the pinned layer and the free layer, A spin valve sensor including a stop layer, the spacer layer, and first and second end edges formed by end edges of the free layer; and a first and a second one of the spin valve sensor. First and second portions of the pinned layer, each extending beyond a second end edge; and over the respective one of the first and second portions of the pinned layer, bonded at an interface. First and second hard magnetic bias layers and a lead layer, wherein each of the first and second hard magnetic bias layers is coupled to the pinned layer at an interface, and the spin valve
A tantalum (Ta) film bonded to each of the first and second end edges of the sensor at the interface; and a chromium (Cr) film on the tantalum (Ta) film and bonded to the tantalum film at the interface. And a cobalt (Co) -based hard magnetic film on the chromium (Cr) film and bonded to the chromium film at the interface. 2. A ferromagnetic first shield layer, the first gap layer on the first shield layer, the spin valve sensor, the first and second hard magnetic bias layers, 2. A lead layer, a non-magnetic and non-conductive second gap layer on the first gap layer, and a ferromagnetic second shield layer on the second gap layer. Read head as described. 3. The pinned layer is an anti-parallel (AP) pinned layer, comprising: first and second ferromagnetic films; and ruthenium sandwiched between the first and second ferromagnetic films. (Ru) spacer film, wherein the first ferromagnetic film is bounded by the pinned layer, and its magnetic moment is fixed in a first direction by the pinned layer; 3. The read head according to claim 1, wherein the first ferromagnetic film fixes the magnetic moment in a second direction antiparallel to the first direction. 4. 4. The hard magnetic film based on cobalt (Co) is selected from the group comprising cobalt platinum chromium (CoPtCr), cobalt platinum (CoPt) and cobalt platinum chromium tantalum (CoPtCrTa). The read head according to claim 1, wherein 5. The read head according to claim 4, wherein in each hard magnetic bias layer, the thickness of each of the tantalum (Ta) film and the chromium (Cr) film is at least 20 °. 6. A magnetic head having an air bearing surface (ABS), comprising: a first ferromagnetic shield layer; and a non-magnetic and non-conductive first gap layer on the first shield layer. And the first
Anti-ferromagnetic nickel oxide (NiO)
A read head including a pinned layer; a ferromagnetic pinned layer exchange coupled to the pinned layer; a ferromagnetic free layer; and a non-magnetic spacer between the pinned layer and the free layer. A pin and a spin valve sensor comprising first and second end edges formed by end edges of the pinned layer, the spacer layer and the free layer; A layer having first and second portions of the pinned layer extending beyond the first and second end edges of the spin valve sensor, respectively; And first and second hard magnetic bias layers and a lead layer overlying each of the second portions and coupled at the interface, wherein each of the first and second hard magnetic bias layers comprises: At the interface with the pinning layer, the spin valve -
A tantalum (Ta) film bonded to each of the first and second end edges of the sensor at the interface; and a chromium (Cr) film on the tantalum (Ta) film and bonded to the tantalum film at the interface. And a cobalt (Co) -based hard magnetic film on the chromium (Cr) film and bonded at the interface with the chromium film, wherein the spin valve sensor, the first and second hard films are provided. A magnetic bias layer and a lead layer, a non-magnetic and non-conductive second gap layer on the first gap layer, a ferromagnetic second shield layer on the second gap layer, and A write gap layer and first and second pole piece layers separated by the write gap at the ABS and connected at a rearward gap recessed from the ABS within the head; An insulating stack having a second insulating layer; and at least one coil layer embedded within the insulating stack, wherein the insulating stack and the at least one coil layer are between the first and second pole pieces. A magnetic head, comprising: a write head; 7. The pinned layer is an anti-parallel (AP) pinned layer, comprising: first and second ferromagnetic films; and ruthenium sandwiched between the first and second ferromagnetic films. (Ru) spacer film, wherein the first ferromagnetic film is bounded by the pinned layer, and its magnetic moment is fixed in a first direction by the pinned layer; 7. The magnetic head according to claim 6, wherein the first magnetic layer is bounded by the first ferromagnetic film, and its magnetic moment is fixed in a second direction antiparallel to the first direction. 8. The cobalt (Co) based hard magnetic film is selected from the group comprising cobalt platinum chromium (CoPtCr), cobalt platinum (CoPt) and cobalt platinum chromium tantalum (CoPtCrTa). The magnetic head according to claim 6, wherein: 9. The magnetic head according to claim 8, wherein in each of the hard magnetic bias layers, the thickness of each of the tantalum (Ta) film and the chromium (Cr) film is at least 20 °. 10. A magnetic disk drive including at least one magnetic head having an air bearing surface (ABS), the magnetic head including a combined read head and a write head, wherein the read head is a hard disk. A magnetic first shield layer, a non-magnetic and non-conductive first gap layer on the first shield layer, and an antiferromagnetic nickel oxide (NiO) pin on the first gap layer A pinned layer, further comprising a ferromagnetic pinned layer exchange coupled to the pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer between the pinned layer and the free layer, A spin valve sensor including first and second end edges formed by end edges of the pinned layer, the spacer layer and the free layer, wherein the pinned layer comprises: The above First and second portions of the pinned layer extending beyond the first and second end edges, respectively, of a pin valve sensor; and the first and second portions of the pinned layer. First and second hard magnetic bias layers and a lead layer overlying each of the portions and coupled at the interface, wherein each of the first and second hard magnetic bias layers comprises: At the interface, the spin valve
A tantalum (Ta) film bonded to each of the first and second end edges of the sensor at the interface; and a chromium (Cr) film on the tantalum (Ta) film and bonded to the tantalum film at the interface. And a cobalt (Co) -based hard magnetic film on the chromium (Cr) film and bonded at the interface with the chromium film, wherein the spin valve sensor, the first and second hard films are provided. A magnetic bias layer and a lead layer, a non-magnetic and non-conductive second gap layer on the first gap layer, and a ferromagnetic second shield layer on the second gap layer The write head comprises a write gap layer and the ABS
An insulating stack having first and second pole piece layers and at least a first and second insulating layer, separated by the write gap and connected at a rearward gap recessed from the ABS in the head. , At least one coil layer embedded in the insulating stack, the insulating stack and the at least one coil layer.
Two coil layers are disposed between the first and second pole pieces; the second shield layer and the first pole piece layer are a common layer; a housing; And a support member provided in the housing and supporting the magnetic head so that its ABS faces the magnetic disk so that the magnetic head has a conversion relationship with the magnetic disk. Means for rotating the magnetic disk; positioning means coupled to the support member for moving the magnetic head to a plurality of positions with respect to the magnetic disk; and the magnetic head, the rotating means, and the positioning means. Processing means for exchanging signals with the merged magnetic head, controlling the movement of the magnetic disk, and controlling the position of the magnetic head, Magnetic disk drive. 11. The pinned layer is an anti-parallel (AP) pinned layer, comprising: first and second ferromagnetic films; and ruthenium sandwiched between the first and second ferromagnetic films. (Ru) spacer film, wherein the first ferromagnetic film is bounded by the pinned layer, and its magnetic moment is fixed in a first direction by the pinned layer; 11. The disk drive according to claim 10, wherein the first ferromagnetic film fixes the magnetic moment in a second direction antiparallel to the first direction. 12. The cobalt (Co) -based hard magnetic film is made of cobalt platinum chromium (CoPtCr),
12. The disk drive according to claim 10 or 11, wherein the disk drive is selected from the group comprising cobalt platinum (CoPt) and cobalt platinum chrome tantalum (CoPtCrTa). 13. A method of forming a magnetic head having an air bearing surface (ABS), comprising: forming a first ferromagnetic shield layer; and forming a non-magnetic and magnetic layer on the first shield layer. Non-conductive first
Forming an antiferromagnetic nickel oxide (NiO) pinning layer on the first gap layer; and forming a spin valve sensor on the first gap layer. Forming a ferromagnetic pinned layer exchange coupled to the pinned layer; a non-magnetic spacer layer on the pinned layer; and a ferromagnetic free layer on the spacer layer. Forming the first and second end edges of the pinned layer, the spacer layer, and the free layer; and forming the first and second ends of the spin valve sensor. Forming first and second portions of the pinned layer extending beyond respective end edges; and bonding interfacially over each of the first and second portions of the pinned layer. First Forming a second hard magnetic bias layer and a lead layer;
Forming each of the second hard magnetic bias layer and the pinned layer at the interface;
Forming a tantalum (Ta) film interfacing with each of the first and second end edges of the sensor; and chromium on the tantalum (Ta) film and bonding at the interface with the tantalum film. Forming a (Cr) film; and forming a cobalt (Co) -based hard magnetic film on the chromium (Cr) film and bonded at an interface with the chromium film; Forming a second non-magnetic and non-conductive gap layer on the valve sensor, the first and second hard magnetic bias layers and the lead layer, and the first gap layer; Forming a ferromagnetic second shield layer on said gap layer; and forming on said second shield layer such that said second shield layer functions as a first pole piece of said write head.
Forming a write gap layer and an insulating stack having a coil layer embedded therein; a second pole piece coupled to the first pole piece at a back gap over the insulating stack and the write gap Forming a layer. 14. The first pinned layer is an anti-parallel (AP) pinned layer; forming a first ferromagnetic film on the first shield layer; 14. The method of claim 13, formed by a process comprising: forming a ruthenium (Ru) spacer film on the film; and forming a second ferromagnetic film on the spacer film. 15. The cobalt (Co) -based hard magnetic film is made of cobalt platinum chromium (CoPtCr),
15. The method according to claim 13 or 14, wherein the method is selected from the group comprising cobalt platinum (CoPt) and cobalt platinum chromium tantalum (CoPtCrTa). 16. In each hard magnetic bias layer, the thickness of each of the tantalum (Ta) film and the chromium (Cr) film is at least 20 °, and the thickness of the free layer is at least 45 °. 15. The method according to 15. 17. A method for forming a magnetic disk drive including at least one magnetic head, wherein the magnetic disk drive is a combined read / write head having an air bearing surface (ABS), the method comprising: a first ferromagnetic shield layer; Forming a nonmagnetic and nonconductive first layer on the first shield layer.
Forming an antiferromagnetic nickel oxide (NiO) pinning layer on the first gap layer; and forming a spin valve sensor on the first gap layer. Forming a ferromagnetic pinned layer exchange coupled to the pinned layer; forming a non-magnetic spacer layer on the pinned layer and a ferromagnetic free layer on the spacer layer And forming first and second end edges of the pinned layer, the spacer layer, and the free layer, the first and second ends of the spin valve sensor. Forming first and second portions of the pinned layer extending beyond respective edge portions; and a first interface bonded to each of the first and second portions of the pinned layer at an interface. 1 and Forming a second hard magnetic bias layer and a lead layer, wherein forming each of the first and second hard magnetic bias layers comprises: coupling to the pinned layer at an interface; valve·
Forming a tantalum (Ta) film interfacing with each of the first and second end edges of the sensor; and chromium on the tantalum (Ta) film and bonding at the interface with the tantalum film. Forming a (Cr) film; and forming a cobalt (Co) -based hard magnetic film on the chromium (Cr) film and bonded at an interface with the chromium film; Forming a second non-magnetic and non-conductive gap layer on the valve sensor, the first and second hard magnetic bias layers and the lead layer, and the first gap layer; Forming a ferromagnetic second shield layer on said gap layer; and forming on said second shield layer such that said second shield layer functions as a first pole piece of said write head.
Forming a write gap layer and an insulating stack having a coil layer embedded therein; a second pole piece coupled to the first pole piece at a back gap over the insulating stack and the write gap Forming a layer; providing a housing; rotatably supporting a magnetic disk in the housing; and forming the layer in the housing such that the magnetic head has a transducing relationship with the magnetic disk. Move the magnetic head to its AB
Providing a support member for supporting the magnetic disk so as to face the magnetic disk; providing a means for rotating the magnetic disk; coupling the magnetic head to the magnetic disk with the support member Providing positioning means for moving to a plurality of positions; coupled to the magnetic head, the rotating means, and the positioning means, exchanging signals with the combined magnetic head, controlling movement of the magnetic disk, Providing processing means for controlling the position of the magnetic head. 18. The method according to claim 18, wherein the layer to be pinned is an antiparallel (AP) layer to be pinned, forming a first ferromagnetic film on the first shield layer, 18. The method of claim 17, wherein the method is formed by the steps of: forming a ruthenium (Ru) spacer film on the film; and forming a second ferromagnetic film on the spacer film. 19. The cobalt (Co) -based hard magnetic film is made of cobalt platinum chromium (CoPtCr),
19. The method according to claim 17 or 18, wherein the method is selected from the group comprising cobalt platinum (CoPt) and cobalt platinum chromium tantalum (CoPtCrTa). 20. In each hard magnetic bias layer, the thickness of each of the tantalum (Ta) film and the chromium (Cr) film is at least 20 °, and the thickness of the free layer is at least 45 °. 19. The method according to 19.