JP3265531B2 - Integrated circuit manufacturing method, wafer on which pattern for integrated circuit is formed, and projection exposure apparatus - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method used for manufacturing an integrated circuit, a wafer on which a pattern for an integrated circuit is formed, and a projection exposure apparatus. More particularly, the present invention relates to an improvement in correction control for a change in an imaging state. 2. Description of the Related Art One of the important optical characteristics of an integrated circuit manufacturing apparatus, for example, a reduction projection type exposure apparatus, is overlay accuracy. Among the factors affecting this, an important factor is a projection optical system. There is a magnification error. In recent years, the degree of integration of integrated circuits has been improved, and patterns have also been miniaturized. Accordingly, demands for improvement in overlay accuracy have been increasing. Therefore, the necessity of maintaining the projection magnification at a predetermined value has become extremely high. The magnification of the projection optical device is determined by a slight temperature change of the device, a slight pressure change of the atmosphere in the clean room where the device is disposed, a temperature change, or irradiation of the projection optical system with energy rays. It fluctuates near the magnification. For this reason, some recent reduction projection type exposure apparatuses have a magnification correction mechanism for finely adjusting the magnification of the projection optical system to realize a required predetermined magnification. For example, the distance between the reticle and the projection lens is changed, the distance between the lenses in the projection lens is changed, or as disclosed in Japanese Patent Application Laid-Open No. 61-78454, a suitable air chamber in the projection lens is provided. There is a mechanism for adjusting the pressure. Further, the focus also moves for the same reason as the above-mentioned factor relating to the magnification. For this reason, some exposure apparatuses have such a focus correction mechanism. By the way, among the above-mentioned factors of the fluctuation of the imaging characteristics, the accumulation of heat due to the irradiation of the projection optical system with energy rays is a thermal diffusion phenomenon having a predetermined specific number. In general, the numerical aperture of an illumination system in a conventional exposure apparatus is often constant. For this reason, the manner in which the energy rays enter the projection optical system is constant, and the time constant of such thermal diffusion is constant. Therefore, the magnification characteristics and focus fluctuation characteristics, which are imaging characteristics, are also constant, and their adjustment and control may be performed by a single method. [0005] However, recently, by changing the numerical aperture of the illumination system, an exposure system capable of obtaining a higher resolution for the projection of a specific pattern. A device has been proposed. In such an apparatus, the distribution state of the light beam on the pupil of the projection optical system changes with a change in the numerical aperture. As a result,
As a result of the experiment, it was confirmed that the time constant also changed. Therefore, even if the above-mentioned control method for a constant time constant is applied, it is not possible to satisfactorily adjust the imaging characteristics, and it is not possible to cope with such a change in the time constant. Further, when the total amount of incident energy rays (illuminance) on the projection optical system is measured on the image plane (substrate to be exposed) side of the projection optical system, and the value is used as a parameter to correct the imaging characteristics, correction control is required. Is treated as a simple change in incident energy. Generally, when the numerical aperture of the illumination system is changed, the illuminance on the image plane changes accordingly, but at the same time, the distribution state of the light flux on the pupil, that is, the energy density near the pupil plane changes as described above. . For this reason, it is expected that not only the time constant described above but also a coefficient term such as a model formula for specifying a change in optical characteristics will change. Therefore, when such a change in the coefficient is not taken into consideration, there is a disadvantage that the correction control becomes inaccurate. The present invention has been made in view of the above point, and satisfactorily adjusts the imaging characteristics, especially the fluctuation of magnification and focus, even if the distribution of energy rays incident on the projection optical system changes. It is an object of the present invention to provide a method and an apparatus for manufacturing an integrated circuit that can be used. According to the present invention, when an image of a mask pattern is projected onto a substrate via a projection optical system, a distribution of an illumination light beam on a pupil plane of the projection optical system is required. Will be changed accordingly. Further, the imaging state of the pattern image is corrected according to the change in the distribution state of the illumination light beam on the pupil plane of the projection optical system. Therefore, even if the distribution state of the illumination light beam on the pupil plane of the projection optical system is changed, the image of the pattern is maintained in a desired image formation state. Embodiments of the present invention will be described below with reference to the accompanying drawings. First, a first embodiment of the present invention will be described with reference to FIGS. First, the overall configuration of the first embodiment of the present invention will be described with reference to FIG. In FIG. 1, a light source 10 for exposure illumination is shown.
Light emitted from the lens 1 through the shutter 12
4, the light is converted into a parallel light beam, and then is incident on an optical integrator or fly-eye lens 16. The light transmitted through the fly-eye lens 16 passes through an illumination aperture stop 18 whose numerical aperture can be automatically or manually changed, and then enters a dichroic mirror 20, where its optical axis is bent downward in the figure. After entering the main condenser lens 22, the optical path is bent again and transmitted through a reticle R having a required pattern,
, And reaches the wafer W on the stage 26, whereby the pattern of the reticle R is projected onto the wafer W. The illumination aperture stop 18 is arranged conjugate with the entrance pupil of the projection lens 24. Next, the projection lens 24 has typical lens elements 24A, 24B, 24C and 24D, respectively.
Between these, the sealed lens chambers 24E, 24F, 24G
Are respectively formed. Among these, the sealed lens 24
The pressure of F is controlled by means described later, and the imaging characteristics of the projection lens 24 are adjusted and controlled. Next, the control system will be described. The control of the imaging characteristics is performed mainly by the main controller 28. A shutter control circuit 30 is connected to the main controller 28. The shutter control circuit 30 controls opening and closing of the shutter 12. The aforementioned sealed lens chamber 2 of the projection lens 24
4F is connected to a pressure controller 32, and a pressure system 34 for supplying pressurized air and an exhaust system 36 for performing vacuum exhaust are connected to the pressure controller 32, respectively. The pressure in the sealed lens chamber 24F is controlled by the solenoid valve. Further, a pressure sensor 38 is connected to the lens sealed chamber 24F.
Each of the pressure regulators 32 is connected to the main controller 28. Thereby, the sealed lens chamber 2
The pressure in the 4F is detected, and the main controller 28 drives the pressure regulator 32 so that the pressure becomes a predetermined value. Next, a selector 40 as input means is connected to the illumination aperture stop 18 described above, and this selector 40 is connected to the main controller 28 via a memory 42. The selector 40 is for selecting, from the memory 42, a time constant that changes according to a σ (sigma) value of the illumination aperture stop 18 described later. Further, the memory 42 stores a time constant of a change of the imaging characteristic which is experimentally obtained in advance corresponding to each σ value or numerical aperture. In addition, among the above components, each part except the illumination aperture stop 18, the selector 40 and the memory 42 is disclosed in Japanese Patent Application Laid-Open No. 60-78454.
The above-mentioned σ value indicates the degree of the aperture, and is expressed by the ratio between the numerical aperture of the illumination optical system and the numerical aperture of the projection optical system on the object (reticle R) side. Next, a change in light distribution in the projection optical system when the numerical aperture changes will be described with reference to FIG. 2 (A) and 2 (B) show one of the devices in FIG.
FIG. 2 is a simplified view of an illumination optical system and a projection optical system. 2A and 2B, a solid line L
A and LB show the path of the light beam, PA shows the position of the entrance pupil, PB shows the main surface, and PC shows the image plane. A broken line indicates an opening on the object side or the image side of the projection optical system. Here, the numerical aperture will be described with reference to FIG. The angle of incident light L with respect to reticle R is θ ₁
When the angle of light transmitted from the reticle R is θ ₂ , the incident angle with respect to the imaging plane PC is θ _3, and the refractive index of air with respect to vacuum is n, the illumination optical system, that is, the incidence side of the reticle R The numerical aperture is represented by n sin θ _1. Similarly, the numerical aperture on the reticle R side of the projection optical system, that is, the projection lens 24 is n sin θ ₂ , and the numerical aperture on the imaging plane PC side is n sin θ ₃ . Since the refractive index n is usually substantially “1”, the numerical aperture is substantially sin
θ ₁ , sin θ ₂ , and sin θ ₃ . FIG. 2A shows a case where the illumination aperture stop 18 is relatively wide open, and the numerical aperture is large. As shown in this figure, the path LA leading to the image formation of the zero-order light beam that travels straight without diffracting out of the illumination light beams collected at three points on the reticle R spreads over the entire inside of the projection lens 24. . Next, FIG. 2B shows a case where the illumination aperture stop 18 is relatively closed, and the numerical aperture is small. In this case, as apparent from the path LB of the zero-order light beam, the light beam converges inside the projection lens 24 near the optical axis.
However, actually, since the diffracted light is present on the reticle R surface, the light beam spreads outside the range shown in the figure. However, even if this point is taken into consideration, the light beam is larger than the case where the numerical aperture is large. Tend to gather near the optical axis. As described above, the light flux distribution or the light image area on the pupil position PA (or the main surface position PB) in the projection lens 24 changes with the change in the numerical aperture or the σ value of the illumination optical system. Become. When such a change in the light flux distribution occurs, the time constant of the change in the imaging characteristics caused by the temperature rise due to the partial absorption of the light flux by the projection lens 24 also changes. Next, the selector 40 and the memory 42 will be described. As described above, the time constant of the change in the imaging characteristic also changes according to the aperture or the σ value of the illumination aperture stop 18. FIG. 4 shows a temporal change in the amount of change in the magnification (or focus) of the projection lens 24 when the σ value is changed as a parameter. Note that the amount of variation is shown as being normalized with its saturation point being 100%. In this figure, the σ value is the value at α ₁ > the value at α ₂ >
The value of α ₃ > the value of α ₄ , and the time t ₀
The shutter 12 is "open" from t to t _C, and the shutter 12 is "closed" after time t _C. Α ₁ having the largest σ value is saturated at time t ₁ , while α ₂ is saturated at time t ₂ , α ₃ at time t ₃ , and α ₄ at time t ₄ . Also, after the time t _C , the degree of decrease differs as indicated by β ₁ to β ₄ . As described above, the time constant of the change in the imaging characteristic changes in accordance with the change in the σ value corresponding to the numerical aperture. Therefore, as shown in FIG. 7A, data on the change of the imaging characteristic is obtained in advance for some σ values or numerical apertures of the illumination aperture stop 18, and the time constant τ _i in each case is obtained. deep. These time constants τ _i are stored in the memory 42, and necessary ones are selected by the selector 40 and input to the main controller 28. Next, the overall operation of the above embodiment will be described. First, the illumination light emitted from the light source 10 enters the lens 14 in response to the opening and closing of the shutter 12 based on the control of the shutter control circuit 30, and is converted into a parallel light beam, and then enters the fly-eye lens 16. Further, the light passes through the illumination aperture stop 18. At this time, the illumination aperture stop 18
The spread of the light beam is appropriately adjusted depending on the σ value or the numerical aperture. The illumination light whose spread has been adjusted enters the reticle R via the dichroic mirror 20 and the main condenser lens 22, respectively, passes through the projection lens 24, reaches the wafer W, and the pattern of the reticle R is projected. Will be On the other hand, the selector 40 stores a time constant corresponding to the set numerical aperture of the illumination aperture stop 18 in the memory 42.
Is selected from For example, when the numerical aperture is 0.6, the time constant τ ₆ is selected (see FIG. 7A). The selected time constant is input to the main controller 28, and the amount of change in the magnification as shown in FIG. 4 is obtained based on the time constant. A control signal is output from the main controller 28 to the pressure regulator 32 based on the amount of the fluctuation and the pressure in the sealed lens chamber 24F detected by the pressure sensor 38, and the pressurizing system 34 and the exhaust system 36 are used. Thus, the pressure in the sealed lens chamber 24F is controlled. As a result, the magnification of the projection lens 24 is controlled to a predetermined value. As described above, the method of controlling the pressure using the time constant on the fluctuation characteristic of the projection lens 24 may be the method disclosed in Japanese Patent Application Laid-Open No. 60-78454. Note that the selector 40 may be configured to manually accept an input based on an operator's judgment. Next, a second embodiment of the present invention will be described with reference to FIGS. Note that the same reference numerals are used for components similar to those in the above-described embodiment. This embodiment is advantageous in improving the throughput without vignetting of the light amount by using a Galileo system lens group instead of the above-mentioned illumination aperture stop 18 as disclosed in Japanese Patent Application Laid-Open No. 58-160914. This is an example. FIG. 5 shows an example in which the numerical aperture is increased.
The Galileo system is arranged by 0, 52 and the lens 14 (FIG. 1)
(See FIG. 2) to expand the illumination light beam collimated. When the Galileo system is not arranged, the result is as shown by the broken line in the figure, and the size of the secondary light source image is IP ₀ . This image is projected onto the image plane 16 at a position conjugate with the pupil of the projection lens 24.
A is formed. Then, in the case of arranging the Galileo system, becomes as shown by the solid line in FIG., The size of the secondary light source image is the numerical aperture is increased becomes IP _1. Next, when the arrangement of the concave and convex lenses 50 and 52 is exchanged, it becomes as shown in FIG. 6, and as shown by the solid line in FIG. 6, the size of the secondary light source image becomes IP ₂ and the numerical aperture is reduced. It is in the same state as the above. As described above, according to the second embodiment, the σ value of the illumination system can be varied without using the illumination aperture stop 18, and therefore, there is no vignetting of the light amount, and the improvement of the throughput can be measured. When the σ value is continuously variable, a zoom lens system may be provided before the fly-eye lens 16. Next, a third embodiment of the present invention will be described with reference to FIG. The device configuration in this embodiment is
This is the same as the first or second embodiment described above, but differs in how to find the numerical aperture and the corresponding time constant. In the first embodiment,
As shown in FIG. 7A, the relationship between the numerical aperture and the time constant is stored in the memory 42 as a table, and necessary ones are read out by the selector 40. However, in this embodiment, the relationship between the numerical aperture and the time constant is approximated by an appropriate function, for example, an n-th order function, as shown in FIG. Then, a corresponding time constant is obtained by calculation from the set numerical aperture. In this case, the selector 40 functions as a means for inputting a change in the numerical aperture. In the case of FIG. 7A,
Although the numerical aperture only changes stepwise, the present embodiment of FIG. 3B can cope with a case where the numerical aperture changes continuously. In the above embodiment, the change of the imaging characteristic is expressed by one time constant. However, in some cases, the fluctuation characteristic (attenuation characteristic and the like) may be expressed by two or more parameters. . In this case, two or more necessary parameters are made to correspond to each numerical aperture. For example, in the example shown in FIG. 7A, a required number of parameters (time constants) such as τ _i1 , τ _i2 , τ _i3 .
2 and the functions for the required number of parameters are prepared in the memory 42 in the example shown in FIG. Further, the numerical aperture and the σ value correspond to each other, and any of them may be used. Further, as the variation characteristics, ΔP is the variation of the magnification and the focus with respect to the instantaneous energy beam irradiation, the time constant is T ₁ , T ₂ , T ₃ , (T ₁ > T ₂ > T ₃ ), and the coefficient is a
_1, a _2, when the a _3, [0028] When the variation amount ΔP is, as expressed by an exponential function of time t as shown in FIG. 4, the coefficients a _1, a _2, a ₃
When it is necessary to correct the above, it may be similarly changed corresponding to the numerical aperture (or σ value). In the above-described embodiment, the change of the time constant is mainly considered. However, the change of the time constant may hardly occur even if the σ value is changed. FIG. 8 shows the illumination aperture stop 1 when the total amount of illumination light incident on the projection lens 24 (image plane illuminance) is constant.
8 shows the variation characteristic of the magnification (or focus) when the value of σ of 8 is changed as a parameter. In FIG. 8, the horizontal axis represents time t, and the shutter 12 is open from time t ₀ to t _C , and is closed after time t _C. And FIG.
The vertical axis indicates the amount of change in magnification (or focus). In this figure, the relationship between the values of the illumination system is as follows: σ value in characteristic γ ₁ > characteristic γ
Sigma value at _2> sigma value of the characteristic gamma _3> has a sigma value of the characteristic gamma _4. Although this characteristic varies depending on the structure of the projection lens, the lens glass material, and the like, there is almost no change in the time constant corresponding to the change in the σ value, and it is recognized that the coefficient term as a parameter has changed. In such a case, as shown in FIG. 9 (A), the memory 42 shown in FIG. Is obtained, and a coefficient C _i (corresponding to a _i in the above equation) corresponding to each σ value is obtained and stored. Then the selector 40 in FIG. 1, to be sent to the main controller 28 is selected desired coefficients C _i are. Also in the same manner as described in FIG. 7 (B), the approximating a relationship between σ value and the coefficient C _i proper function as shown in FIG. 9 (B), the example in n-order function or hyperbolic, etc., the function The equation may be stored in the memory 42 and a coefficient corresponding to the set σ value of the illumination system may be obtained by calculation. Of course, by storing both the time constant and the coefficient in the memory 42,
Depending on the change in the σ value, both or one of them may be read and used for control. Further, in each of the above embodiments, a method of correcting the optical characteristics of the projection lens 24 itself by adjusting an appropriate pressure in the air chamber in the projection lens is used as a means for correcting an imaging state. A method of changing the middle lens interval may be used, or another method may be used. For example, if the reticle side of the projection lens 24 is non-telecentric, the magnification on the wafer can be changed by automatically moving the reticle R in the optical axis direction. Therefore, if the amount of movement is changed in accordance with the calculated fluctuation characteristic, the magnification can always be kept at a constant value. Further, when the focus fluctuation of the projection lens 24 becomes a problem, the automatic focusing mechanism for keeping the distance between the projection lens 24 and the wafer W constant is provided with an offset according to the fluctuation characteristic, The position where the wafer W is considered to be in focus may be changed in accordance with the change in the imaging plane in the optical axis direction. That is, in the present invention, any method may be used as long as the image formation state of the projected image on the wafer W can be corrected. Also, when the shape of the light source image (image of the aperture stop or the like) on the pupil of the projection lens changes from a circle to another shape, it is similarly desirable to change parameters such as time constants and coefficients. Furthermore, when the numerical aperture (pupil size) of the projection optical system itself is changed by a stop or the like, the parameters (time constants, coefficients) are changed in exactly the same manner as when the numerical aperture of the illumination system is changed. Needless to say, similar effects can be obtained. Also in this case, it functions as a means for inputting a change in the numerical aperture (σ value) of the selector 40. As described above, according to the present invention, even if the distribution state of the incident light in the projection optical system changes, the change of the image forming characteristic can be adjusted well, and the image forming characteristic can be accurately adjusted. There is an effect that can be maintained.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram showing a first embodiment of the present invention. FIG. 2 is a diagram illustrating a change in light distribution in a projection lens when a numerical aperture changes. FIG. 3 is a diagram for explaining a numerical aperture. FIG. 4 is a diagram showing an example of a change in imaging characteristics when the numerical aperture is changed. FIG. 5 is a diagram for explaining a second embodiment in which the numerical aperture is changed using a Galileo system. FIG. 6 is a diagram for explaining a second embodiment in which the numerical aperture is changed using a Galileo system. FIG. 7 is a diagram for explaining an example of correspondence of a time constant to a numerical aperture. FIG. 8 is a diagram illustrating an example of a change in imaging characteristics when the numerical aperture is changed. FIG. 9 is a diagram for explaining an example of a correspondence between a coefficient and a numerical aperture (σ value). [Description of References] 10: light source, 12: shutter, 16: fly-eye lens, 18: illumination aperture stop, 22: main condenser lens, 24: projection lens, 24A, 24B, 24C, 24
D: lens element, 24E, 24F, 24G: sealed lens chamber, 26: stage, 28: main controller, 30
... Shutter control circuit, 32 ... Pressure regulator, 38 ... Pressure sensor, 40 ... Selector, 42 ... Memory, R ... Reticle,
W ... wafer

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-62-229838 (JP, A) JP-A-8-234138 (JP, A) JP-A-60-78454 (JP, A) JP-A-59-1984 155843 (JP, A) JP-A-58-160914 (JP, A) JP-A-60-163046 (JP, A) SPIE vol. 174 (1979) P. 48-P. 53, United States (58) Fields surveyed (Int. Cl. ⁷ , DB name) H01L 21/027 G03F 7/20

Claims (1)

(57) [Claims] A method for manufacturing an integrated circuit, comprising projecting an image of a pattern of a mask onto a substrate via a projection optical system, wherein a distribution state of an illumination light flux on a pupil plane of the projection optical system is adjusted using a zoom optical system in the illumination system. a change in the imaging state of the image of the pattern generated in response to a change in distribution of the illumination light beam in the pupil plane of the projection optical system; step and to change
Correcting using a predetermined operation in accordance with the change in the distribution state . 2. 2. The integrated circuit manufacturing method according to claim 1, wherein the zoom optical system is capable of continuously changing a distribution state of an illumination light beam on a pupil plane of the projection optical system. 3. 3. The integrated circuit manufacturing method according to claim 1, wherein the zoom optical system is provided on a light source side with respect to an optical integrator in the illumination system. 4. An integrated circuit manufacturing method including projecting an image of a pattern of a mask onto a substrate via a projection optical system, wherein illumination on a pupil plane of the projection optical system is performed by changing an arrangement of a plurality of optical elements in the illumination system. Changing the distribution state of the light beam; and changing the imaging state of the image of the pattern caused by the change in the distribution state of the illumination light beam on the pupil plane of the projection optical system .
Correcting using a predetermined operation in accordance with the change in the distribution state . 5. The method according to claim 4, wherein an arrangement of the plurality of optical elements is changed on a light source side with respect to an optical integrator in the illumination system. 6. A method of manufacturing an integrated circuit, comprising projecting an image of a pattern of a mask onto a substrate via a projection optical system, wherein the distribution of the illumination light flux on a pupil plane of the projection optical system is performed by expanding the illumination light flux in the illumination system. a change in the imaging state of the image of the pattern generated in response to a change in distribution of the illumination light beam in the pupil plane of the projection optical system; step and changing the status
Correcting using a predetermined operation in accordance with the change in the distribution state . 7. 7. The integrated circuit manufacturing method according to claim 6, wherein the illumination light flux is expanded on a light source side with respect to an optical integrator in the illumination system. 8. 8. The image forming apparatus according to claim 1, wherein the correction of the image forming state is performed by adjusting the projection optical system.
The integrated circuit manufacturing method according to any one of the above. 9. 9. The integrated circuit manufacturing method according to claim 1, wherein the correction of the imaging state includes a correction relating to a magnification of the image of the pattern. 10. The method according to claim 1, wherein a desired imaging state is maintained by the correction. 11. A wafer on which a pattern for an integrated circuit is formed through a step of projecting an image of a pattern of a mask through a projection optical system, wherein the projection is performed by using a zoom optical system in an illumination system for illuminating the mask. Changing the distribution state of the illumination light beam on the pupil plane of the optical system; and changing the imaging state of the image of the pattern caused by the change of the distribution state of the illumination light beam on the pupil plane of the projection optical system .
A pattern for an integrated circuit is formed through: a step of performing correction by using a predetermined calculation corresponding to the change of the distribution state ; and a step of projecting an image of the pattern whose image formation state has been corrected. Wafer. 12. The wafer according to claim 11, wherein the zoom optical system is provided on a light source side with respect to an optical integrator in the illumination system. 13. A wafer on which a pattern for an integrated circuit is formed through a step of projecting an image of a pattern of a mask through a projection optical system, wherein an arrangement of a plurality of optical elements in an illumination system for illuminating the mask is changed. the imaging state of the image of the pattern generated in response to a change in distribution of the illumination light beam in the projection pupil plane of the optical system; step and to change the distribution of the illumination light beam in the pupil plane of the projection optical system by Change
A pattern for an integrated circuit is formed through: a step of performing correction by using a predetermined calculation corresponding to the change of the distribution state ; and a step of projecting an image of the pattern whose image formation state has been corrected. Wafer. 14． 14. The wafer according to claim 13, wherein an arrangement of the plurality of optical elements is changed on a light source side with respect to an optical integrator in the illumination system. 15. A wafer on which a pattern for an integrated circuit is formed through a step of projecting an image of a pattern of a mask through a projection optical system, wherein the illumination light beam is expanded in an illumination system for illuminating the mask. Changing the distribution state of the illumination light beam on the pupil plane of the projection optical system; and changing the imaging state of the image of the pattern caused by the change in the distribution state of the illumination light beam on the pupil plane of the projection optical system .
A pattern for an integrated circuit is formed through: a step of performing correction by using a predetermined calculation corresponding to the change of the distribution state ; and a step of projecting an image of the pattern whose image formation state has been corrected. Wafer. 16. The wafer according to claim 15, wherein the illumination light beam is expanded on a light source side with respect to an optical integrator in the illumination system. 17． A projection exposure apparatus for projecting an image of a pattern of a mask onto a substrate via a projection optical system, comprising a zoom optical system in an illumination system, and using the zoom optical system, an illumination light beam on a pupil plane of the projection optical system Changing means for changing the distribution state of the pattern; and changing the imaging state of the image of the pattern caused by the change of the distribution state of the illumination light beam on the pupil plane of the projection optical system .
Correction means for correcting using a predetermined calculation according to the change of the distribution state . 18. 18. The projection exposure apparatus according to claim 17, wherein the zoom optical system is capable of continuously changing a distribution state of an illumination light beam on a pupil plane of the projection optical system. 19. In a projection exposure apparatus for projecting an image of a pattern of a mask onto a substrate via a projection optical system, the projection optical system includes a plurality of optical elements in an illumination system, and the arrangement of the plurality of optical elements is changed. Changing means for changing the distribution state of the illumination light beam on the pupil plane of the projection optical system; and changing the image formation state of the image of the pattern caused by the change in the distribution state of the illumination light beam on the pupil plane of the projection optical system .
Correction means for correcting using a predetermined calculation according to the change of the distribution state . 20. In a projection exposure apparatus that projects an image of a pattern of a mask onto a substrate via a projection optical system, the projection exposure apparatus is arranged in an illumination system, expands an illumination light beam, and changes a distribution state of the illumination light beam on a pupil plane of the projection optical system. a change in the imaging state of the image of the pattern generated in response to a change in distribution of the illumination light beam in the pupil plane of the projection optical system; changing means and for changing
Correction means for correcting using a predetermined calculation according to the change of the distribution state . 21. 21. The projection exposure apparatus according to claim 17, wherein the changing unit is disposed on a light source side with respect to an optical integrator in the illumination system. 22. 22. The projection exposure apparatus according to claim 17, wherein the correction unit adjusts the projection optical system. 23. 23. The projection exposure apparatus according to claim 17, wherein the correction unit includes a correction relating to a magnification of the image of the pattern.