JP3247426B2 - Head and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a head for an ink jet recording apparatus, and more particularly to a head having a thermal energy generating means and a method of manufacturing the same.

[0002]

2. Description of the Related Art Among various recording methods known at present, it is a non-impact recording method in which almost no noise is generated at the time of recording, high-speed recording is possible, and a special fixing process is performed on plain paper. The so-called liquid jet recording method (ink jet recording method) that can perform recording without requiring is an extremely useful recording method. As for the liquid jet recording method, various methods have been proposed so far, some of which have been commercialized with improvements, and some of which are still being put to practical use.

[0003] In the liquid jet recording method, recording is performed by causing droplets of a recording liquid called ink to fly according to various working principles and attaching the droplets to a recording medium such as paper.

[0004] The present applicant has already proposed a new method relating to the liquid jet recording method. This new method is described in U.S. Pat. S. Patent No. 4,72
No. 3,129, the basic principle of which is as outlined below. In other words, this liquid jet recording method gives a thermal pulse as an information signal to a recording liquid introduced into a working chamber capable of containing the recording liquid, thereby generating a vapor bubble in a process in which the recording liquid generates a vapor bubble. According to this method, the recording liquid is discharged from a liquid discharge port communicating with the working chamber in accordance with the acting force, and is made to fly as small droplets, and is attached to a recording medium to perform recording.

In this method, a high-density multi-array configuration is easily adapted to high-speed recording and color recording, and the configuration of the apparatus for implementing the method is simpler than that of the conventional apparatus. It has the advantages of being able to be designed and mass-produced, and being able to make full use of the advantages of IC technology and micro-machining technology, which have made remarkable advances in technology and reliability in the semiconductor field. Is a flexible way.

A characteristic recording head of a liquid jet recording apparatus used in the above liquid jet recording method is provided with a thermal energy generating means for discharging recording liquid from a liquid discharge port to form flying droplets. I have.

FIG. 1 is a schematic diagram for explaining the above-described recording head. On the substrate 21, a heat generating portion 18 that generates heat by a current flowing through the Al electrode 14 is provided.

On top of this, a top plate member 13 provided with a groove for forming an ink discharge port 17, an ink liquid path 16, a common ink chamber 12, and an ink supply port 19 is attached to form a recording head. . Reference numeral 4 denotes a wiring connected to the underlying electrode 14 via the contact hole 5 provided in the insulating layer, and an external drive signal (current) is applied to the wiring.

2 and 3 are views showing the structure of a thermal energy generating means in a conventional recording head. FIG. 2 is a plan view, and FIG. 3 is a sectional view taken along line AA 'in FIG. is there. In FIG. 3, reference numeral 21 denotes silicon (Si).
It is a substrate. On the Si substrate 21, a heat storage layer 2 made of SiO ₂ for providing heat storage and electrical insulation is provided. The heat storage layer 2 is formed, for example, by thermally oxidizing the surface of the Si substrate 21, or is laminated on the surface of the Si substrate 21 by sputtering or the like. On the heat storage layer 2, a heating resistance layer 3 made of HfB ₂ or the like is formed with a predetermined thickness by sputtering or the like. An Al electrode 14 is provided with a predetermined thickness on the heating resistance layer 3 by sputtering or the like, and is patterned into a predetermined shape by photolithography as shown in FIG. The heating resistance layer 3 located between the Al electrodes 14 is exposed. This exposed portion serves as a heat generating portion 18 that generates heat by electric power supplied from the Al electrode 14. These A
The l-electrode 14 and the heat generator 18 constitute an electrothermal conversion element. This electrothermal conversion element includes a heat generating portion 18 and Al
It has a recess due to the gap with the electrode 14.

[0010] On such an electrothermal conversion element, a protective layer 7 for preventing these elements from being in contact with the ink and being electrolytically corroded is provided. The ink-resistant protective layer 7 often has a two-layer structure as shown in FIG. In this example, the ink-resistant protective layer 7 is a heat-generating portion 1 for the ink.
Lower layer 8 made of SiO ₂ serving to shield 8
And Ta serving as a cavitation-resistant layer for withstanding cavitation generated when the ink is defoamed.
And an upper layer 9 composed of If necessary, a layer (not shown) made of tantalum oxide may be provided between the upper and lower protective layers 9 and 8 to increase the adhesive strength of Ta.

FIG. 4 is a sectional view of a connecting portion for connecting each electrothermal converting element. The electrode 14 and the wiring 4 are connected via the contact hole 5.

[0012]

However, in the conventional example, as shown in FIG. 4, since the Al wiring 4 is formed at a place where the step (step) of the contact hole is large, there are the following problems. Was.

1) In order to perform high-precision and high-quality recording by arranging heat-generating resistance layers or electrodes and wiring on a substrate at a high density of, for example, about 400 dpi to 1000 dpi, miniaturization of wiring is required. As a result, the step of the protective film 8 becomes large and sharp, and the processing accuracy and reliability of the wiring formed thereon are reduced. In addition, the coverage of the Al wiring 4 in the contact hole is poor, and the formed Al is polycrystalline. When a high-density current flows, a phenomenon in which wiring metal atoms move, that is, electromigration occurs. Due to this electromigration, voids are generated along the crystal grain boundaries, coarsening occurs due to the aggregation of voids, or hillocks or whiskers grow at locations where Al atoms are gathered. Heating and fusing of the wiring due to the reduced area may result.

2) In the case of the configuration in which the contact hole 5 is disposed in the ink liquid chamber 12, the ink and the wiring come into contact with each other due to poor step coverage, causing corrosion, electrolysis of the ink, and the like. .

An object of the present invention is to solve the above problems and provide a highly reliable head having excellent migration resistance and a method of manufacturing the same.

Another object of the present invention is to provide a head having a flat surface of a substrate provided with an electrothermal transducer and a method of manufacturing the same.

[0017]

In order to achieve the above object, the present invention provides a head for an ink jet recording apparatus having a discharge energy generating element for generating thermal energy used for discharging ink. , A flat heating resistor layer is provided on a flat surface formed of a conductor formed by a selective CVD method on a substrate having a conductive surface, and an insulating layer; An ejection energy generating element is formed by providing a protective layer thereon.

[0018]

The head according to the present invention is a head for an ink jet recording apparatus having an ejection energy generating element for generating thermal energy used for ejecting ink. The head has a substrate having a semiconductor surface. A flat heating resistor layer is provided on a flat surface formed by an insulating layer having a pair of provided openings and a conductor formed by selective CVD in the pair of openings of the insulating layer. Further, an ejection energy generating element is formed by providing a protective layer on the heating resistor layer.

A head according to the present invention is a head for an ink jet recording apparatus having an ejection energy generating element for generating thermal energy used for ejecting ink, and a substrate having an insulating surface provided with a pair of concave portions. A flat heating resistor layer is provided on a flat surface formed by a pair of conductors formed in the pair of recesses by the selective CVD method and the insulating surface, respectively, Further, a discharge energy generating element is formed by providing a protective layer on the heating resistor layer.

The head according to the present invention comprises: an electrothermal converter for generating thermal energy used for discharging ink;
In a head for an ink jet recording apparatus having a wiring portion electrically connected to the electrothermal transducer, the wiring portion is provided on a heating resistor layer provided on a substrate and on the heating resistor layer. A pair of conductive layers, an insulating layer provided on the pair of conductive layers, an opening provided in the insulating layer, and a conductor formed by selective CVD in the opening. Is characterized by being provided over a pair of conductive layers.

[0022]

[0023]

[0024]

[0025]

According to the method of manufacturing a head of the present invention, there is provided a method of manufacturing a head for an ink jet recording apparatus having an ejection energy generating element for generating thermal energy used for ejecting ink. Forming an insulating layer, forming an opening in the insulating layer where the conductive surface is exposed, forming a conductor in the opening by a selective CVD method, and forming a conductor substantially by the conductor and the insulating layer; Forming a flat heating surface on the substantially flat surface, forming a flat heating resistor layer on the substantially flat surface, forming a conductive layer connected to the heating resistor layer on the insulating layer, A step of forming the ejection energy generating element by providing a protective layer on the layer.

The method of manufacturing a head according to the present invention is a method of manufacturing a head for an ink jet recording apparatus having an ejection energy generating element for generating thermal energy used for ejecting ink. A plurality of semiconductor regions defined by the above, an insulating layer is formed on the semiconductor substrate, a plurality of openings are provided in the insulating layer so that the semiconductor region is exposed, and a selective CVD method is provided in the openings of the insulating layer. Forming a substantially flat surface by the conductor and the insulating layer; forming a flat heating resistor layer on the substantially flat surface; A step of forming the ejection energy generating element by providing a protective layer on the layer.

Alternatively, the method of manufacturing a head according to the present invention is directed to a method of manufacturing a head for an ink jet recording apparatus having an ejection energy generating element for generating thermal energy used for ejecting ink. Forming a pair of openings through which the surface of the semiconductor is exposed, forming a conductor in the openings of the insulating layer by a selective CVD method, and forming the conductor with the insulating layer. Forming a substantially flat surface, forming a flat heating resistor layer on the substantially flat surface, and providing a protective layer on the heating resistor layer to form the ejection energy generating element. It is characterized by including a forming step.

The method of manufacturing a head according to the present invention is directed to a method of manufacturing a head for an ink jet recording apparatus having an ejection energy generating element for generating thermal energy used for ejecting ink, wherein the head has an insulating surface. Forming a pair of recesses in the substrate, forming a conductor in the pair of recesses by a selective CVD method, forming a substantially flat surface between the conductor and the surface, and forming the substantially flat surface; Forming a flat heating resistor layer on a flat surface and providing a protective layer on the heating resistor layer to form the discharge energy generating element.

[0030]

[0031]

Preferably, the method further includes a step of injecting the ink into the ink container. Preferably, the conductor is made of a metal containing aluminum as a main component.

In the above-described head, the conductor is preferably made of a metal containing aluminum as a main component. Further, it is preferable that the head has an ink chamber for storing ink and a plurality of ink ejection ports communicating with the ink chamber.

Further, the head ejects ink in a direction substantially parallel to the heat generating surface of the electrothermal transducer, or in a direction substantially intersecting the heat generating surface of the electrothermal converter. This is for discharging ink.

Further, it is preferable that the head has an ink chamber for storing ink, and the ink is stored in the ink chamber.

The head is combined with the means for holding the recording medium at the recording position to constitute an ink jet recording apparatus.

[0037]

According to the present invention, the selective deposition method is used. Specifically, a step for forming at least a part of the electrode of the electrothermal transducer or a member provided for flattening the surface of the substrate is used. A selective deposition method is used in the forming step.

That is, in the conventional method, a deposit is selectively formed only in a portion where a concave portion is formed, so that a large uneven surface does not occur.

[0039]

Embodiments of the present invention will be described below in detail with reference to the drawings.

Example 1 In a method for manufacturing a recording head according to an embodiment of the present invention, a step of forming a heating resistor layer for supplying thermal energy for discharging a recording liquid to the recording liquid on a substrate; Forming an electrode made of an electron donating material that is electrically connected to the heat generating resistance layer; forming a protective layer covering the electrode; and selectively depositing the protective layer in a through hole reaching the electrode. And selectively forming a metal film.

FIG. 5 is a sectional view of a portion called a contact hole or a through hole in a recording head substrate.

First, a heat storage layer 2 is formed on a support 21 made of a Si wafer. As a material constituting this layer, for example, titanium oxide, vanadium oxide, niobium oxide, molybdenum oxide, tantalum oxide, tungsten oxide, chromium oxide, zirconium oxide, hafnium oxide,
Transition metal compounds such as lanthanum oxide, yttrium oxide, and manganese oxide; metal oxides such as aluminum oxide, calcium oxide, strontium oxide, barium oxide, and silicon oxide; and composites thereof, silicon nitride,
High resistance nitrides such as aluminum nitride, boron nitride and tantalum nitride, and composites of these oxides and nitrides, and also semiconductors such as amorphous silicon and amorphous selenium, etc., even if the bulk has low resistance, the sputtering method, CV
Examples of the thin film material include a thin film material capable of increasing resistance in a manufacturing process such as a D method, a vapor deposition method, a gas phase reaction method, and a liquid coating method. It is desirable that the layer thickness is generally 0.1 μm to 5 μm, preferably 0.2 μm to 3 μm.

Next, the heating resistor layer 3 is formed. As a material constituting the heat generating resistance layer, most materials can be adopted as long as they generate desired heat when energized.

Examples of such a material include, for example, tantalum nitride, nichrome, silver-palladium alloy, silicon semiconductor, hafnium, lanthanum, zirconium, titanium, tantalum, tungsten, molybdenum,
Borides of metals such as niobium, chromium and vanadium are preferred.

Among the materials constituting the heat generating resistance layer 3, metal borides can be mentioned as being particularly excellent. Among them, hafnium boride has the best characteristics, and the second is boron. Zirconium boride, third is lanthanum boride, fourth is tantalum boride, fifth is vanadium boride, and sixth is niobium boride.

The heating resistance layer 3 can be formed using the above-mentioned materials by using a technique such as an electron beam evaporation method or a sputtering method.

The heating resistor layer 3 is formed on the heating resistor layer 3.
The first electrode 4 electrically connected to the first electrode 4 is formed. As a material of the electrode, a metal mainly containing Al, Au, Ag, Cu or the like is used. These can be formed by a sputtering method or an electron beam evaporation method.

Further, a material similar to that of the heat storage layer is formed as the protective film 8 by a sputtering method, a CVD method, or the like.

Al 24 is selectively grown in the contact hole 5 by using a selective CVD method (see FIG. 6). Observation of the film formation shows that the Al film 4 which is an electron donating material
Al does not grow on the SiO ₂ layer 8 which grows vertically and is a non-electron donating material.

Next, an Al film 4 serving as a second electrode is formed by a sputtering method, a CVD method or an electron beam evaporation method, and is etched leaving a necessary portion.

Finally, for example, SiO ₂ , Al ₂ O ₃ , and Si ₃ N ₄ are formed on the electrodes as a protective film 26 having excellent heat resistance and ink shielding properties to prevent electrolytic corrosion and oxidation from the recording liquid. (See FIG. 7).

[0052] According to the selective CVD method, the selectively Al is deposited only on Al, in an aspect ratio of 1 or more large through hole as shown in FIG. 8, SiO ₂ layer 8
Is deposited perpendicularly to the bottom surface of the Al electrode 4 without depositing on the side surface of the Al electrode 4. Therefore, if the second protective layer (SiO ₂ layer) 8 is formed to have the same thickness, good step coverage can be obtained.

Here, FIG. 4 shows a configuration similar to the reference numeral in FIG.

On the other hand, on the electrothermal transducer, Al, Ta, Zr, Hf, V, and N are further added for the purpose of enhancing the durability against mechanical impact generated when the vapor bubbles disappear.
b, Mg, Si, Mo, W, Y, La, and other metals and their alloys, or oxides, carbides, nitrides, borides, and the like of these metals and alloys may be provided to provide a cavitation-resistant layer. .

Although not particularly shown in the figures, each electrode is provided with an exposed portion for connection to the outside by a method such as bonding. The heating resistor layer may have any desired shape and size as long as the object can be achieved, and may have different shapes and sizes.

FIG. 9 is an exploded perspective view of the recording head.

A heater 18 having a heating resistance layer for supplying heat energy to the recording liquid for discharging the recording liquid and a pair of electrodes for supplying electric energy to the heater 18 are formed on the recording head substrate 21 formed as described above. 14 are provided.
A groove for the ink flow path 16 which is an action chamber is formed in the top plate 13. The ink flow path 16 communicates with the ink liquid chamber 12 to which ink is supplied via an ink supply port 19. The ink ejection ports 17 for ejecting ink and the recording head substrate 11 are sufficiently aligned and joined so as to correspond to each other. Thus, a recording head having an appearance as shown in FIG. 10 was finally manufactured. Further, a lead substrate (not shown) having electrode leads for applying a desired pulse signal from outside the recording head is attached to the electrode 14 to obtain electrical connection.

As a member for forming the ink discharge port 17, a workable photosensitive material such as a photosensitive resin film or photosensitive glass may be used, or a suitable flat plate such as glass may be used. A groove may be formed by a method, an etching method, or the like, and the groove may be attached to a recording head substrate. At this time, the ink liquid chamber 12, the ink liquid supply port 19, and the like may be integrally manufactured. A specific method for forming an ink discharge port using a photosensitive material is to expose a photosensitive composition layer provided on a recording head substrate surface to a predetermined pattern to form a cured region, and to form the cured composition layer. Forming a groove serving as an ink flow path in the recording head substrate by removing the uncured composition from the recording head substrate. S. P
attent No. No. 4,417,251,
Using this method, the ink liquid chamber and the ink ejection port may be formed.

Further, a photosensitive resin is coated on the substrate, a glass top plate is placed on the substrate, and the substrate is joined. An unnecessary portion of the photosensitive resin is removed, and the ink discharge port, the ink flow path, The liquid chamber may be formed of a photosensitive resin to manufacture the top plate of the recording head (US Patent No. 5,030,317).
No.).

According to the present embodiment, by depositing Al or an Al alloy on the through holes of the protective layer by the selective CVD method, it is possible to easily produce a flattened substrate. Further, the thickness of the Al film or the Al alloy film can be arbitrarily determined by controlling the film forming time of Al or the Al alloy. Inevitably, step coverage is also improved.

Further, since there is no step in the through-hole portion which has existed in the past, and the surface can be flattened, the ink-resistant protective film can be made thinner, and the response such as heat transfer to the ink can be improved and the ejection can be improved. The characteristics are improved.

The electromigration resistance is also improved.

Since the aspect ratio of the through hole portion can be increased by one or more, the through hole pattern can be miniaturized.

Since the durability of the recording head substrate is improved,
The yield is improved, and a highly reliable and inexpensive recording head can be provided.

Example 2 A method of manufacturing a recording head substrate according to another embodiment of the present invention comprises the steps of: forming a heat storage layer made of a non-electron donating material on a substrate made of an electron donating material; Forming a through-hole reaching the substrate through a layer; and selectively depositing a metal in the through-hole by a selective deposition method to form a flat portion having the same thickness as the heat storage layer. Forming a heating resistor layer on the flat portion, which is electrically connected to the substrate via the metal, and supplies heat energy for discharging the recording liquid to the recording liquid.

According to this embodiment, there is no step in the recording liquid discharge direction which is an obstacle to the flow of the recording liquid, and the recording liquid can be discharged smoothly, and the step corresponding to the thickness of the electrode wiring on the protective layer is low. Therefore, even if the density of the heating resistance layer and the electrode wiring are increased, the performance of the protective layer can be prevented from deteriorating.

Further, since the surface of the through-hole has no irregularities, the heating resistor formed on the through-hole does not crack.

FIGS. 11 and 12 are a plan view and a sectional view, respectively, of the ink jet recording head of the present invention.

In FIGS. 11 and 12, reference numeral 108 denotes a protective layer, which is a heat-generating resistor layer 103 made of a metal boride such as NiCr alloy, ZrB ₂ or HfB ₂ , and the individual electrode 12.
4 to prevent the recording liquid from coming into contact with the recording liquid. 1
Reference numeral 14 denotes a common electrode buried in the contact hole by the selective CVD method, and reference numeral 102 denotes a heat storage layer for efficiently transmitting heat generated by energizing the heating resistor layer 103 to the heat acting surface 101 side. This heat storage layer 105 is formed from an insulating material such as SiO ₂ . Reference numeral 126 denotes a metal substrate, which serves as a common electrode of the heating resistor 103. In FIG. 12, the rear part of the individual electrode 124, that is, the protective layer 10
The portion not covered with 8 is an electrode pad portion of a bonding wire (not shown) for connecting the individual electrode 124 to the electric drive circuit of the ink jet recording head.

Hereinafter, the method of manufacturing the recording head according to the present embodiment will be described with reference to FIG.

A heat storage layer 102 is formed on a conductive substrate 121, and a through hole is formed by etching (FIG. 1).
3 (A)) The substrate 121 only needs to have a conductive surface, and specifically, Al, stainless steel, or A
having a thin film of 1, Cu, Ag, Mo, W, etc. on the surface;
Glass or resin may be used. The heat storage layer can be formed by the material and the manufacturing method described in detail in the first embodiment.

Next, the metal 114 is selectively deposited only in the through holes by the selective deposition method (FIG. 13B).

The heating resistance layer 103 is formed on the metal 114 and the heat storage layer 102a, and is patterned by etching (FIG. 13C).

To form the electrode 124, a conductive film is deposited and patterned by etching (FIG. 13).
(D)).

A protective layer 108 is formed if necessary (FIG. 13E). Through the steps described above, a print head substrate is formed in this manner.

Here, the protective layer, electrodes, heat generating resistive layers and the like to be used can be formed by the same material and the same method as in the first embodiment.

Thereafter, as in the first embodiment, a top plate is attached to form a recording head.

In the case of a recording head of a type not provided with the protective layer 108, the substrate shown in FIG.

Embodiment 3 In Embodiment 3, it has been found that a new recording head can be manufactured by utilizing the properties of the selective deposition method.

That is, the recording head substrate of this embodiment is
An element separation type substrate in which a region containing a second conductivity type impurity is formed on a substrate made of an electron donating material containing a first conductivity type impurity, and a region provided on the element separation type substrate, And a protective film made of a non-electron donating material having a recess formed therein, wherein a metal is deposited in the recess.

More specifically, an element separation type substrate in which a region containing a second conductivity type impurity is formed on a substrate made of an electron donating material containing a first conductivity type impurity, A protective film made of a non-electron donating material provided with a concave portion reaching the region, wherein a metal is deposited in the concave portion, and a heat for connecting to the metal and discharging the recording liquid is provided. A recording head substrate provided with a heating resistor layer that supplies energy to the recording liquid; and a recording liquid that is ejected using the heat energy that is provided on the recording head substrate and that is supplied by the heating resistor layer. A discharge port forming member having a discharge port opened.

Further, according to the method of manufacturing a recording head of the present invention, a step of doping a substrate having an electron donating property containing an impurity of a first conductivity type with an impurity of a second conductivity type is provided. Forming an element isolation region in the substrate by doping the substrate, patterning the substrate to form an opening reaching the element isolation region, and selectively depositing a metal in the opening by a selective deposition method. Depositing.

Conventionally, a patterned Al deposited film has been used as electric wiring of a recording head having a heating resistor element on the same substrate. This is because it is most advantageous comprehensively in terms of conductivity, wire bonding method, workability and economy.

For the formation of the Al deposited film, a physical deposition method such as a vacuum deposition method, a sputtering method, and an electron beam deposition method is used. However, the formed Al particles have a polycrystalline structure. Therefore, unlike a single crystal, boundaries between grains and grain boundaries exist. Therefore, when a high-density current (≧ 1 × 10 ⁵ A / cm ² ) flows due to high resistivity, a phenomenon in which metal atoms of the wiring move, that is, electromigration occurs. Electromigration generally leads to disconnection through the following steps.

1) Al atoms in the wiring move due to collision and diffusion of a high-density electron flow, and voids are generated along with crystal grain boundaries.

2) The voids are coarsened by the aggregation of the voids. Place where Al atoms gather (on the anode side from the void)
Hillocks or whiskers grow.

3) The wiring generates heat due to the reduction in the cross-sectional area of the wiring accompanying the growth of voids, and the wiring is blown.

The following factors can influence the electromigration.

1) Wiring Length, Wiring Width The cause of the failure due to electromigration has statistical properties because it depends on defects in the film, and occurs at random locations in the wiring length direction. Therefore, the longer the wiring length, the higher the probability of occurrence of a failure. The lifetime decreases exponentially as the wiring length increases and saturates at a certain value.

If the wiring width is wide, voids generated by electromigration grow laterally,
The time required for disconnection becomes longer. However, the wiring width becomes about the same as the size of the grain size, the grain boundary diffusion decreases, and the life is extended. Considering the current density, the longer the sectional area, the longer the life. In this case, considering the deposition of the insulating film and the surface coating, it is better to increase the wiring width and increase the cross-sectional area than to increase the wiring thickness as far as space permits.

2) Wiring temperature Since electromigration is accelerated at a high temperature,
Suppressing the temperature rise of the wiring itself is also one suppression method. It is important to reduce the resistance of the wiring film, reduce the self-heating of the film itself, and design the circuit in consideration of diffusion resistance, heat generation from surroundings such as a PN junction, a heat sink of the underlying substrate, and the like.

3) Crystal Structure The main purpose of improving the metal film structure is to increase the grain size. This has two implications.

I) Electromigration mainly involves grain boundary diffusion. Therefore, if the grain boundary density of the crystal is reduced, the life can be improved.

Ii) Those having a large grain size have their crystal orientations in the <111> direction. Therefore, discontinuity in the wiring is reduced, and electromigration is suppressed.

The crystal structure of the metal film depends on the device for forming the thin film and its forming conditions (temperature, degree of vacuum, deposition rate, etc.). In general, as a method for obtaining a large particle size, it is conceivable to lower the deposition rate, increase the base temperature, or perform heat treatment after the deposition.

According to an experiment, the electron beam evaporation method has a larger grain size and a longer life than the sputtering evaporation method. Further, in the sputtering deposition method, there is a temperature dependency of the substrate, and when the base temperature is lowered, the variation in the particle diameter is large and the life is shortened.

4) Addition of Other Elements The addition of other elements to the Al thin film is the method that contributes most to the improvement of the life of electromigration. In the past, elements that have been found to be effective in improving the life of electromigration are Cu, Ti, Ni, Co,
Cr.

The effect of suppressing the electromigration of the added element is related to the grain boundary diffusion. The addition of the additional element reduces the number of vacancies depending on the grain boundaries. As a result, the diffusion ability at the grain boundaries is reduced, and the life due to electromigration is improved. Many studies have been made on the addition of Cu, Cu is easier to move than Al atoms,
Cu precipitates at the Al grain boundaries as θ particles. As a result, A
Electromigration due to the grain boundary diffusion of 1 is suppressed.

5) Surface Coating and Surface Treatment In an integrated circuit, a protective film is usually formed on a metal wiring film. Covering such a metal film with an insulating dielectric is also effective as an electromigration suppressing method. At present, SiO ₂ , anodized alumina, SiN
(Nitride film) and the like have been reported. The effect of dielectric coating is to suppress surface diffusion by applying mechanical stress.
This is considered to be caused by suppressing the growth of hillocks and consequently suppressing the formation of voids.

6) Flattening In the case of flat wiring, voids and hillocks are randomly generated in the length direction. On the other hand, in the case of stepped wiring, voids and hillocks are concentrated on the stepped portion. If the step coverage at the step portion is poor, the cross-sectional area of the Al wiring at the step portion becomes small, the current density at that portion increases, and as a result, the life due to electromigration is significantly shortened.

7) Multilayer Wiring A multilayer structure of Al wiring is used for higher integration and higher density. Elements different from the conventional wiring are a step of the lower wiring, a through hole, and mutual interference between different Al wirings.

The problem with through holes is also flattening. The conventional single-layer wiring and the electromigration phenomenon can be treated in the same manner as long as the through holes are flattened with little variation. The small variation means that electromigration failures occur randomly in the length direction, and the lifetime depends on the number of through holes.

Mutual interference between different layers is an interlayer short circuit. This means that the insulating film is broken by electromigration, and hillocks of fine Al are grown.

8) Contact Part In the contact part where Si and Al are in contact, there are phenomena in which Si diffuses into Al and Si precipitates due to high-temperature treatment.

By the high temperature treatment, Si is supplied into Al up to the solid solubility limit of the treatment temperature, and alloyed Al infiltrates the Si substrate where Si has been consumed, and alloy spikes are generated. When an alloy spike occurs, the P formed in Si
This results in increased leakage current at the N junction. In order to suppress alloy spikes, there is a method in which Si is contained in the Al wiring in advance and Si does not diffuse from the Si substrate into the Al wiring, or a method using a high melting point metal as a barrier metal.

When considering the electromigration caused by applying a current at the contact portion,
It is necessary to consider both the movement of Al and the solid solution of Si in Al. As the contact portion is miniaturized, the current density of the contact portion increases, and above the contact on the anode side, Al and Si in Al move to the anode side by electromigration. When the Si concentration in Al decreases, Si on the contact surface solid-dissolves in Al,
Voids are formed in the Si substrate. The formation of this void
The contact resistance increases. Also, a shallow junction results in an increase in leakage current. The increase in the contact resistance increases as the contact area decreases. As a method of preventing the increase of the contact resistance and the junction leak, there is a method of providing a barrier layer between Al and Si. Examples of the barrier metal include Ti, W, Pt, and palladium.

Due to these causes, in order to prevent electromigration failure, a method of increasing the width of the Al wiring, a method of using a circuit for reducing the current density, and a method of keeping the heating element away from a wiring having a high current density are used. It turns out that it is good. However, this hinders miniaturization and high-density wiring.

On the other hand, according to the third embodiment, a single-crystal metal wiring is made possible on the recording head substrate, and has a lower resistance value than polycrystalline Al formed by a conventional electron beam evaporation method or sputtering method. Since no grain boundaries exist and hillocks and voids are not generated, electromigration resistance can be increased. Therefore, finer wiring and higher density can be achieved.

Hereinafter, the third embodiment will be described in detail with reference to the drawings.

FIGS. 15 to 20 are schematic sectional views showing the steps of manufacturing the recording head of the present invention.

First, a P-type doped Si substrate 1 is manufactured by doping a silicon substrate with boron at a doping amount of 1 × 10 ¹⁶ / cm ³ (see FIG. 15). For example, when performing doping by a vapor deposition method, it is common to mix a diluted dopant gas into a supply gas. P
Examples of the type of dopant gas include B ₂ H ₆ (diborane), boron tribromide, methyl borate, boron trichloride, and the like. The doping amount is 10 ¹⁴ to 10 ¹⁸ /
cm ³ is preferred. For example, in the case of gas doping, since the supply gas concentration and the carrier concentration in the growth layer are proportional over a wide range, the relationship between the gas concentration and the carrier concentration is usually examined in advance, and the supply is performed so that the desired carrier concentration is obtained. Adjust the gas concentration. However, at very high doping, the carrier concentration tends to saturate and is not necessarily proportional to the supply amount. This is because there is a maximum concentration determined depending on the solid solubility limit of the dopant in Si. Further, even at a very low concentration (<-10 ¹⁴ / cm ³ ), it is difficult to control the doping amount. This is because unintentional impurities are introduced by impurities mixed from auto doping, gas, equipment, and the like. Therefore, the doping region which can be easily controlled is generally 10 < ¹⁴ > to 10 < ¹⁸ > / cm < ³ >.

The P-type doped Si substrate 221 is subjected to a thermal diffusion method,
Alternatively, P is set to 10 ¹⁶ / cm by the epitaxial method.
³ Doping, N-type doped Si region 23 near the surface
1 (see FIG. 16). Examples of N-type doped gas include PH ₃ (phosphine), AsH ₃ (arsine), red phosphorus, phosphorus pentoxide, ammonium phosphate, phosphorus oxychloride, phosphorus tribromide and the like.

Next, P-type impurities were diffused by a method such as thermal diffusion or ion implantation to electrically separate the P-type layer 241 so as to reach the underlying P-type doped Si substrate 221. This is an element isolation region (see FIG. 17).

Next, an insulating protective film 208 is formed. The material for forming the insulating protective film is the same as that of the first embodiment. This is also the case with thermal oxidation, sputtering, CV
It can be formed by a method such as D method, vapor deposition method, gas phase reaction method, and liquid coating method. The layer thickness is generally 0.1 μm
５5 μm, preferably 0.2 μm-3 μm. In this embodiment, the thickness is 1000 by the thermal oxidation method.
A 0 ° SiO ₂ film 208 is formed.

Thereafter, only the portions necessary for the wiring are patterned by a method such as photolithography to expose the surface of the N-type doped Si region 231 (see FIG. 18).

Further, an Al layer 214 is selectively formed on the exposed portion of the surface of the N-type doped Si region 231 by a CVD method using DMAH and hydrogen (see FIG. 19). Since the N-type doped Si region 231 is made of an electron donating material, Al selectively grows only in the N-type doped Si region 2 and does not deposit on the SiO ₂ film 4 which is a non-electron donating material. Therefore, even if the aspect ratio (groove depth / groove diameter) is large, Al is selectively N-type doped S
Since it is deposited on the i region 231, the wiring can be miniaturized. In addition, since Al obtained by the above CVD method is a single crystal, it is different from polycrystalline Al obtained by a conventional evaporation method or a sputtering method. Therefore, since the resistivity of Al becomes low and a high-density current can flow, the electromigration resistance is excellent.

Next, a heating resistor layer 203 is formed (FIG. 2).
0). As a material constituting the heat generating resistance layer, any material can be adopted as long as it generates heat as desired by being energized.

As such materials, those described in Example 1 above are specifically preferable.

The heating resistance layer can be formed by using the above-mentioned materials by a technique such as an electron beam evaporation method or a sputtering method. In this embodiment, HfB ₂ is formed by sputtering at a thickness of 1000 ° C. To a thickness of Then, it is patterned into a heater shape by etching as shown in FIG.

The protective layers 218 and 20 are formed on the heating resistance layer 5.
9 is formed (see FIG. 22).

The properties required for the protective layer 218 are excellent in heat resistance and ink shielding properties to prevent electrolytic corrosion and oxidation from the recording liquid, and the heat generated in the heating resistor layer 203 is effectively applied to the recording liquid. The purpose is to protect the heating resistor layer 5 from the recording liquid without disturbing the transmission to the recording liquid. Useful materials for forming the protective layer 218 include, for example, silicon oxide, silicon nitride, magnesium oxide, aluminum oxide, tantalum oxide, zirconium oxide, and the like. It can be formed by using the method described above. The thickness of the protective layer 218 is generally 0.01 to 10 μm, preferably 0.1 to 5 μm.
μm, and most preferably 0.1 to 3 μm.

Further, in order to make the durability performance against the mechanical impact force generated when the vapor bubbles disappear, higher performance is required.
1, Ta, Zr, Hf, V, Nb, Mg, Si, Mo,
The second protective layer 209 is provided using a metal such as W, Y, La, or an alloy thereof, or an oxide, carbide, nitride, boride, or the like of an alloy of the metal. Thus, a recording head substrate is prepared.

The recording head substrate prepared as described above is provided with a top plate 13 defining an ink flow path having openings, nozzles, a common liquid chamber, a recording liquid supply port, and the like. Complete the head.

In FIG. 23, the top plate 13 may be formed using a photosensitive material such as a photosensitive resin film or a photosensitive glass, or may be formed on a suitable flat plate such as a glass by a mechanical method, etching, or the like. A recording head can also be manufactured by forming a groove in the top plate 13 by using the method and attaching the groove to a recording head substrate.

FIG. 24 is a schematic diagram for explaining the operation of the recording head according to this embodiment.

At least in the operation state of discharging ink, a potential is applied to reversely bias the junction between the N-type region 231 and the P-type region 221. Such a potential is provided, for example, by holding the base 221 at the ground potential as a reference potential, and connecting the N-type region to the reference voltage source V _Ref and holding it at a positive reference potential.

Embodiment 4 Embodiment 4 provides an ink jet recording head which consumes less power and has high thermal energy transmission efficiency, and a method of manufacturing the same.

More specifically, a step of providing a heat storage layer having an uneven surface on a conductive substrate, a step of forming two electrodes separated from each other via a convex portion of the heat storage layer, A step of providing a heating resistor layer on the projection of the heat storage layer; and a step of providing a protective layer on the heating resistor layer.

According to one embodiment of the present invention, the structure is such that Al is buried in the recess provided in the heat storage layer on the substrate.
Since the thickness of the protective layer on the electrode can be reduced and the structure near the electrode can be flattened by using Al-CVD for embedding Al, the protective layer can be made thin even if the Al layer is formed thick. In addition, it is possible to simultaneously solve the voltage drop countermeasures in the Al wiring and the heat energy loss countermeasures in the protective layer. Thereby, an ink jet recording head having high energy efficiency can be provided. Further, since the protective layer is thin, the foaming of the ink is stabilized, the variation in the amount and speed of the ejected ink can be reduced, and the print quality can be improved to a higher quality.

In the ink jet head, a pulse voltage is applied to the Al electrode in order to eject ink. As a result, the temperature of the electrothermal conversion element is instantaneously raised to about 300 ° C., the ink on the electrothermal conversion element is vaporized, and the volume change causes the ink in the nozzle to be extruded from the ejection port.

However, the energy used for this ejection is a part of the applied electric energy, and the other energy consumed is not small.

One is the energy consumed in the Al wiring, and the other is the thermal energy consumed to warm up the heat storage layer and the protective layer and escapes to the Si substrate side. Therefore, in order to reduce the power consumption of the printer, it is important how to reduce the consumption of the energy that does not contribute to the ejection. The following two points can be cited as this measure.

(1) The loss of heat energy at the Al electrode is reduced by lowering the resistance value of the Al electrode. Specifically, the electrode width is increased or the film thickness is increased.

(2) The heat-resistant portion 6 is thinned to reduce the loss of heat energy in the protection layer, and the heat energy from the heat generating portion 6 is efficiently used for ink film boiling.

However, these methods (1) and (2) are all difficult to realize for the following reasons.

(1) The width of the Al electrode is limited by the nozzle array density. For example, at 300 DPI, 84.7
One electrothermal transducer must be formed in a micron-meter wide space. If an attempt is made to narrow the gap between the electrodes within this space width, the width of the electrodes increases, but the gap between the electrodes becomes narrower. Ascends and leads to lower yield.

(2) Even if the Al film is formed thick or the protective lower layer 8 made of SiO ₂ is simply formed as a thin film, a sputter film or a CVD film is formed in the gap between the Al electrodes 4 and 5 as shown in FIG. In either case, the wraparound of the SiO ₂ film is poor, and cracks occur in the ink-resistant protective layer 7 in the vicinity of the gap due to cavitation generated at the time of bubble elimination and thermal stress caused by repeated pulses. Once a crack is generated, ink penetrates through the crack, and the electrothermal conversion element including the heating resistor layer 3 and the Al electrodes 4 and 5 is electrically eroded, resulting in disconnection.

For this reason, a method of forming a concave portion in the heat storage layer 2 and embedding Al in the concave portion (JP-A-61-1258).
No. 58) has been proposed.

However, as shown in FIG. 26, when patterning the Al film in the concave portion of the heat storage layer 2 by photolithography or the like, the patterning accuracy of the photoresist is shifted by about 0.5-1 μm. Therefore, the Al film cannot completely fill the concave portion, and the Al film runs over the surface of the heat storage layer 2 outside the concave portion.

Embodiment 5 In the method of manufacturing an ink jet recording head according to Embodiment 5, a step of providing a heating resistor layer on a conductive substrate and forming two main electrodes separated from each other on the heating resistor layer are performed. A step of providing an auxiliary electrode on at least one of the two main electrodes, and a step of providing a protective layer for protecting the heat storage layer exposed from between the two main electrodes.

Here, the electrode forming step utilizes a selective CVD method. As the selective CVD method, a CVD method using alkyl aluminum hydride and hydrogen is preferable. In this case, dimethyl aluminum hydride is suitably used as the alkyl aluminum hydride.

According to the fifth embodiment of the present invention, since the structure is such that the Al electrode is thick except for the vicinity of the ejection energy generating element, the resistance value of the electrode itself can be reduced, and the voltage loss applied to the ejection energy generating element can be reduced. An ink jet recording head that can be suppressed can be provided.

FIGS. 27 and 28 are views showing the structure of a heat energy generating element according to an embodiment of the present invention. FIG. 27 is a plan view, and FIG.
FIG.

As shown in FIG. 28, on the heat storage layer 302 on the Si substrate 321, Al thin films 320a and 320b patterned by photolithography are provided. The Al thin films 320a and 320b are provided apart from each other by a predetermined distance. Al thick films 321a and 321b are provided on the Al thin films 320a and 320b, respectively. Al thin film 320a and Al
The thick film 321a constitutes the first Al electrode 322a,
The 1 thin film 320b and the Al thick film 321b constitute a second Al electrode 322b.

On the heat storage layer 302 between the first Al electrode 322a and the second Al electrode 322b and between the first Al electrode 322a and the ink discharge port, a first electrode made of SiO ₂ is formed. The inter-layer protection layer 323a and the second inter-electrode protection layer 323b are provided so as to be substantially flush with the upper surfaces of both electrodes. Thin-film heating resistor layer 303 composed of HfB ₂ is formed on the two electrodes 322a and 322b and the electrodes between the protective layer 323a and 23b are provided to be patterned into the shape shown in FIG. 27. In this structure, since there is no step in the boundary region between the electrode and the protective layer, the heating resistance layer 303 is formed almost flat.

A thin ink-resistant protective layer 307 is provided on the heating resistor layer 303. In this embodiment, the ink-resistant protective layer 307 is a lower layer 30 made of SiO ₂ which plays a role of shielding the heat generating portion 318 from ink.
8 and T serving as a cavitation-resistant layer for withstanding cavitation generated when ink defoams.
a of the upper layer 309. If necessary, an intervening layer (not shown) made of tantalum oxide may be provided between the upper and lower protective layers 309 and 308 to increase the adhesive strength of Ta.

Next, a method of manufacturing the ejection energy generating element having such a configuration will be described with reference to the drawings.

FIGS. 29 and 30 are schematic sectional views showing the steps of manufacturing an ejection energy generating element according to one embodiment of the present invention.

As shown in FIG. 29A, first, a Si wafer is prepared as a Si substrate 321. Then
The main surface of the Si wafer 321 is coated with S
A heat storage layer 302 made of iO ₂ is grown to a predetermined thickness (for example, 1 micrometer).

Next, an Al film is formed to a predetermined thickness (for example, 200 nm) on the heat storage layer 302 by sputtering, and then patterned by photolithography as shown in FIG. 320
a and 320b are formed.

Next, Si is sputtered on the heat storage layer 302 including the Al thin films 320a and 320b.
After laminating the O ₂ film to a predetermined thickness (for example, 1 μm), a resist is provided on the SiO ₂ film by a photolithography technique. This resist has the same shape as the Al thin films 320a and 320b, and its dimensions are set slightly smaller than those of the Al thin films 320a and 320b. The SiO ₂ film is etched by reactive ion etching using such a resist pattern, and a first protective layer 323a and a second protective layer 323b are formed as shown in FIG. Here, as a reaction gas in the reactive ion etching, for example, a mixed gas of CF ₄ and C ₂ F ₆ can be used. In this etching step,
Since Al is hardly etched, the Al thin films 320a and 320b have the function of an etching stop layer. Further, as shown in FIG. 29C, the peripheral portions of the Al thin films 320a and 320b are formed by the first inter-electrode protective layer 323a and the second inter-electrode protective layer 323.
The reason for the overlap under the peripheral portion of b is that if there is no such overlap, the thermal storage layer 302 below the protective layer is displaced due to a positional shift when the protective layer is patterned and formed. This is because a part is exposed and the exposed part is not etched.

Next, as shown in FIG. 30A, the Al thick films 321a and 321 having a predetermined thickness (for example, 1 μm) are formed on the Al thin films 320a and 320b.
b is formed. As a method for forming these thick films, for example, an Al-CVD method described later can be suitably used.
In this case, the Al thin films 320a and 320b are
It can be used as an underlayer for the selective deposition of Al by the VD method. Here, as described above, the Al thin film 320
a and the Al thick film 321a constitute a first Al electrode 322a, and the Al thin film 320b and the Al thick film 321b constitute a second Al electrode 322b.

Next, an HfB ₂ film having a predetermined thickness (for example, 200 nm) is formed on each of these electrodes by sputtering, and then patterned to form an HfB ₂ film as shown in FIG.
As shown in FIG. 2, the first Al electrode 322a and the second A
A thin-film heating resistance layer 303 made of HfB ₂ is formed on the l electrode 322b and the first inter-electrode protection layer 323a.

Thereafter, a thin-film ink-resistant protective layer 7 is provided on the heat-generating resistor layer 303 and the second inter-electrode protective layer 323b. That is, as shown in FIG. 30C, a predetermined film thickness (for example, 40 mm) is formed on the heating resistance layer 303 and the like.
0 nm) of a protective lower layer 308 made of SiO ₂ , and then a predetermined thickness (for example, 200 n) on the protective lower layer 308.
m) The protective upper layer 309 made of Ta is formed by sputtering to form the ink-resistant protective layer.

In the discharge energy generating element thus obtained, the Al electrode 3
Since the configuration in which the layers 22a and 322b are provided is provided, an ink-resistant protective layer having a thickness smaller than 従 来 of that of the related art can be provided above the heating resistor layer 303. Since the thickness of the ink-resistant protective layer 7 is small, it is possible to minimize the amount of energy consumed by the ink-resistant protective layer, out of the heat energy from the heat generating portion between the electrodes. Therefore, the heat energy can be efficiently used for the film boiling of the ink. In forming the Al electrodes 322a and 322b, if an Al-CVD method described later is used,
Al electrodes 322a and 322b and interelectrode protective layer 323
Although the boundary region between a and 323b is slightly uneven, it can be formed as a substantially flat surface.

The thus-obtained Si substrate 301 having the ejection energy generating elements is assembled into an ink jet recording head through, for example, the process shown in FIG.

Embodiment 6 In the above-described embodiment 5, the Al thin films 320a and 320a are used as the etching stopper layers in the reactive ion etching.
Although 20b was used, etching is possible without this stop layer. In this case, the etching rate of the SiO ₂ film may be determined in advance, and the etching may be performed only for the time required for etching to a predetermined depth (for example, 1 μm).

In the sixth embodiment, first, as shown in FIG. 31, the main surface of the Si wafer
The thermal storage layer 302 made of iO ₂ is grown. Next, under the same conditions as in Example 1, reactive ion etching is performed for a predetermined time as described above to form a concave portion in the heat storage layer 302. Next, an Al thin film of a predetermined thickness (for example, 20 n
m), a resist is spin-coated on the surface of the Al thin film and baked, and the resist other than the resist in the concave portion of the heat storage layer 302 is removed using an O ₂ plasma asher. In this case, as shown in FIG. 31, the resist 311 remains in the concave portion, and the Al thin film in the other portion where the resist is removed is exposed. Here, when the Al thin film is etched, only the Al thin films 324a and 324b at the bottom of the concave portion covered with the resist 311 remain without being etched. After removing the resist in the concave portions, Al is selectively grown by the Al-CVD method described later using the Al thin films 324a and 324b as electron donors to form Al thick films 325a and 325b as shown in FIG.
To form an Al electrode 326a comprising Al thin films 324a and 324b and Al thick films 325a and 325b.
And 326b are provided. Next, the Al electrode 32
6a and 326b and the exposed surface of the heat storage layer 302, the heat-generating resistor layer 30 is formed in the same manner as in the first embodiment.
3. The ink-resistant protective layer 307 is sequentially laminated to obtain an ejection energy generating element.

The thus-obtained Si substrate 1 having the ejection energy generating element is assembled into an ink jet recording head through, for example, the process shown in FIG.

Embodiment 7 In Embodiment 6, the Al thin film 3 in the concave portion of the heat storage layer 302 was used.
The resist was used to remove only the Al thin film provided on the surface of the heat storage layer 302 (which is relatively convex with respect to the concave portion) without removing the heat storage layers 24a and 324b. Only the Al thin film on the convex portion 302 may be removed by buffing. In this case, as shown in FIG. 33, the Al thin films 327a and 327b in the concave portion are not removed at all, and therefore, unlike the Al thin films 324a and 324b in the concave portion in the second embodiment, the Al thin films 327a and 327a in the concave portion in the present embodiment are different from each other. 327b also includes the Al thin film on the entire inner wall surface of the recess. In this case, the peripheral edge, which is the boundary between the projection and the recess, is chamfered. Next, A
As shown in FIG. 3, Al is selectively grown by the later-described Al-CVD method using the thin films 327 a and 327 b as electron donors.
As shown in FIG. 3, the Al thick films 328a and 328b are formed, and the Al thin films 327a and 327b and the Al thick film 328 are formed.
and Al electrodes 329a and 329b, respectively. Next, a heating resistor layer 303 and an ink-resistant protective layer are sequentially laminated on the Al electrodes 329a and 329b and the exposed protrusions of the heat storage layer 302 in the same manner as in the first embodiment to obtain a discharge energy generating element.

The thus-obtained Si substrate 301 having the ejection energy generating element is assembled into an ink jet recording head through, for example, the process shown in FIG.

Embodiment 8 FIGS. 34 to 43 are schematic sectional views showing the steps of manufacturing a thermal energy generating element according to another embodiment of the present invention.

As shown in FIGS. 34 and 35, first,
On the main surface of the i-substrate 421, a heating resistance layer 403 of, for example, HfB ₂ is provided by sputtering or the like. Note that the surface layer of the main surface of the Si substrate 421 may be formed with a SiO ₂ film by thermal oxidation or the like as described above in advance. Next, an Al film having a predetermined thickness is formed on the heating resistance layer 403 by sputtering or vapor deposition of an Al electrode material. The thickness of the Al film is preferably smaller than the desired thickness of the ink-resistant protective layer in order to maintain durability. For example, when the thickness of the ink-resistant protective layer is 0.5 μm and the thickness of the Al film for the Al electrode is 0.3 μm, the coverage of the step portion of the Al electrode pattern of the ink-resistant protective layer is reduced. No problem at all. Since the ratio of these film thicknesses is not a necessary condition and affects the difference in durability, it may be appropriately set as needed.

Next, at the same time as forming the heating resistor layer 403 into a desired pattern by photolithography,
The first Al electrode 430a and the second A
An l electrode 430b is formed. These two Al electrodes 430a
The heating resistance layer 403 between the heat generating portions 418 and 430 b
It has become.

Next, as shown in FIGS. 36 and 37,
For example, SiO _{2 is formed on} the upper surface of the substrate 421 including the heat generating portion 418 between the Al electrodes 430 a and 430 b and the electrodes.
A first ink-resistant protective layer 407 is formed by sputtering or the like.

Next, as shown in FIGS. 38 and 39, the first ink-resistant protective layer 407 located above the Al electrode 430a except for the first ink-resistant protective layer 407 in the vicinity of the heat generating portion is photo-etched. Etching is performed by lithography so that the upper surface of the Al electrode 430a is exposed.

Next, as shown in FIGS. 40 and 41,
An auxiliary Al electrode 431 is provided by depositing Al on the upper surface of the Al electrode 430a exposed by partially removing the first ink-resistant protective layer 407 by an Al-CVD method described later. The thickness of the auxiliary Al electrode 431 is the first ink-resistant protective layer 4.
It is desirable that the thickness be substantially equal to the film thickness of 07. For example,
If the thickness of the etched first ink-resistant protective layer 407 is 0.5 μm, an Al film is deposited to a thickness of 0.5 μm on the upper surface of the Al electrode 430a. If the film thicknesses of the two layers are equal, the upper surfaces of the two layers are continuous and flat with each other, which is suitable for joining the ink flow path wall and the top plate, which are performed in a later step.

The auxiliary Al electrode 431 and the Al electrode 430
“a” constitutes a two-layer electrode structure, and its film thickness also increases. Therefore, since the resistance value of the Al electrode having the two-layer electrode structure can be reduced, the amount of heat energy loss in the Al electrode can be reduced, and the power supply to the inkjet recording head can be reduced. . This leads to a reduction in power consumption of a printer equipped with such an ink jet recording head.

Next, as shown in FIGS. 42 and 43,
On the auxiliary Al electrode 431, at least the auxiliary Al electrode 43
1 is provided, a second ink-resistant protective layer 432 is provided which protects the protective layer 1 and also serves as the outer frame of the ejection energy generating element. As a material for forming the second ink-resistant protective layer 432, for example, a photosensitive resin can be used. In the illustrated example, the second
The ink-resistant protective layer 432 is formed by a photolithography technique in a pattern excluding the vicinity of the heat generating portion 418 (discharge energy generating element portion) and the portion of the auxiliary Al electrode 431 where electricity is taken out.

As shown in FIG. 44, the thus obtained Si substrate 421 provided with the thermal energy generating element is formed by forming an ink liquid path wall 11 using a cured photosensitive resin film, and then forming an ink A cover 413 for forming an ink ejection port (nozzle) covering the liquid path wall 11 is disposed.

Such a laminate is assembled into an ink jet recording head through, for example, the steps shown in FIGS.

Embodiment 9 In Embodiment 8, as shown in FIGS. 36 and 37, first, a SiO ₂ film was formed on a substrate 421 by sputtering.
Then, unnecessary portions were removed by photolithography to form a first ink-resistant protective layer 407. As shown in FIGS. 45 to 48, first, a mask having a desired pattern shape was formed on the substrate 1. After covering the jig, a first ink-resistant protective layer 407 may be formed by forming SiO ₂ by sputtering. In this case, there is an advantage that the photolithography step is not required.

Embodiment 10 In Embodiment 9, the heating resistor layer 403 is formed on the substrate 421.
And an Al film is formed on the heating resistance layer 403 by performing a desired patterning. However, a heating resistance layer made of an ejection energy generating element material such as HfB ₂ is formed on the substrate 421 by sputtering or the like. The heating resistor layer is patterned by photolithography into the same shape as the desired shape of the Al electrode.
After depositing an Al film by the l-CVD method,
Of the film, the Al film at a position required as an ejection energy generating element may be partially removed by photolithography, and the surface of the heat-generating resistor layer at the removed portion may be exposed. Subsequent steps may be performed in accordance with the above embodiments.

Embodiment 11 Since the heat energy generating means is basically composed of a heat-generating resistor layer that generates heat when energized and a pair of electrodes for energizing the heat-generating resistor layer, When the recording liquid is in direct contact with the recording liquid, depending on the electric resistance value of the recording liquid, electricity flows through the liquid, the recording liquid itself is electrolyzed by the flow of electricity through recording, or the heat generating resistance layer When power is supplied to the heating resistor layer, the heating resistor layer and the recording liquid react with each other, which may cause a change in resistance value due to corrosion of the heating resistor layer, or damage or destruction of the heating resistor layer.

For this reason, conventionally, the heat generating resistance layer is made of an inorganic material having relatively excellent characteristics as a heat generating resistance material such as an alloy such as NiCr and a metal boride such as ZrB ₂ and HfB ₂ . By providing a protective layer made of a material having excellent oxidation resistance such as SiO ₂ on the heating resistor layer made of the material, the heating resistor layer is prevented from directly contacting the recording liquid, It has been proposed to solve the above problems and to improve the reliability and the durability in repeated use.

By the way, when forming the thermal energy generating means of such a liquid jet recording head, it is general to form the above-mentioned heating resistance layer on a desired substrate and then sequentially laminate the electrodes and the protective layer. The protective layer of the thermal energy generating means is provided with various heat-generating elements in order to sufficiently perform various functions as a protective layer such as prevention of damage to the heat-generating resistance layer and prevention of short-circuit between electrodes. It is required that the required portions of the resistive layer and the electrodes be uniformly covered without having defects such as pinholes.

[0177] Such a liquid jet recording head has the following features.
As described above, since an electrode is generally formed on a heating resistor layer, a step is formed between the electrode and the heating resistor layer.
However, since the thickness of such a step portion is likely to be uneven, the layer is formed so as to sufficiently cover the step (step coverage) so as not to generate an exposed portion. I have to. In other words, when the step coverage is insufficient, the exposed portion of the heat generating resistive layer comes into direct contact with the recording liquid, and the recording liquid is electrolyzed or the recording liquid reacts with the material of the heat generating resistive layer to generate heat. In some cases, the resistance layer was destroyed. In addition, unevenness in film quality and the like easily occurs in such a stepped portion. Such unevenness in film quality causes partial concentration of thermal stress generated in the protective layer due to repeated heat generation, and cracks ( This may cause cracks, and the recording liquid may enter through the cracks, leading to the destruction of the heat-generating resistance layer as described above. Furthermore, the recording liquid may enter through the pinhole and break the heat generating resistance layer.

Conventionally, in order to solve such a problem, it is generally practiced to increase the thickness of the protective layer to improve step coverage and reduce pinholes. However, although increasing the thickness of the protective layer contributes to the reduction of step coverage and pinholes, increasing the thickness of the protective layer hinders the supply of heat to the recording liquid, and causes the following new problems. became.

That is, the heat generated in the heat generating resistive layer is transmitted to the recording liquid through the protective layer. The thermal resistance between the surface of the protective layer and the heat generating resistive layer, which is the surface where the heat acts, is considered. The thickness of the protective layer is increased by increasing the thickness of the protective layer, which causes an unnecessary power load to be applied to the heating resistor layer, which is disadvantageous for power saving. This leads to problems such as poor heat resistance and the durability of the heat-generating resistor layer being deteriorated due to excessive power.

Such a problem can be overcome by reducing the thickness of the protective layer. However, in the conventional method of manufacturing a liquid jet recording head using a film forming method such as sputtering or vapor deposition for forming the layer, step coverage is not considered. Due to defects and the like, there were the above-mentioned drawbacks in durability, and it was difficult to make the protective layer thin.

It is known that during recording with the liquid jet recording head as described above, the foaming stability of the recording liquid generally improves as the recording liquid is rapidly heated.
That is, an electric signal applied to the thermal energy generating means,
In general, a rectangular electric pulse is used. However, the shorter the pulse width is, the better the foaming stability of the recording liquid is, and thus, the ejection stability of flying droplets is improved and the recording quality is improved. However, in the conventional liquid jet recording head, as described above, the thickness of the protective layer must be increased, so that the thermal resistance of the protective layer increases, and excessive heat is generated by the thermal energy generating means. This necessitates degradation of durability and thermal responsiveness, which makes it difficult to shorten the pulse width, and there has been a limit in improving the recording quality.

Further, when producing a conventional liquid jet recording head, as shown in FIG. 3, a heat generating resistor layer 3 is laminated on a substrate 211 by using a sputtering method.
At least a pair of electrodes 14 connected to the electrodes are provided. In addition,
Reference numeral 9 denotes a heat acting surface which supplies electric power to the heat generating portion 18 of the heat generating resistor layer 3 formed between the electrodes 14 and transmits the generated heat to the recording liquid, and has a step (step).

In such a configuration, as described above, defects such as pinholes are likely to occur in the protective layer 7, and particularly in the step, exposed portions are likely to occur. Must be at least twice the thickness of the electrode).

This embodiment has been made in view of the above-mentioned problems of the prior art, and achieves a power saving, a high durability, and a high-speed response, and can further improve the recording quality. A main object of the present invention is to provide a method for producing a liquid jet recording head.

In the method of manufacturing a liquid jet recording head according to this embodiment, a step of forming a heating resistor layer made of an electron donating material on a substrate and supplying heat energy for discharging the recording liquid to the recording liquid is performed. Forming a protective layer made of a patterned non-electron donating material on the heating resistor layer; and electrically connecting the heating resistor layer to a portion where the protection layer has been removed by the patterning. Selectively depositing an aluminum film by the metal organic chemical vapor deposition method so as to have the same thickness as the protective layer to form a flat portion.

In this embodiment, the heat-generating resistance layer and the first and second protective layers are made of well-known materials, for example, by sputtering such as radio frequency (RF) sputtering, chemical vapor deposition (CVD), and vacuum deposition. It is formed using a method or the like. It is necessary to use an organic metal CVD method as a method of forming an electrode at a portion electrically connected to the heating resistor layer.

FIG. 49 is a general process chart showing an example of a method for producing a liquid jet recording head substrate of the present invention.

First, as shown in FIG. 49A, on a substrate 521 made of a desired material, for example, glass, ceramics or plastic, an alloy such as NiCr or a metal boride such as ZrB ₂ or HfB ₂ is used. The heating resistor layer 2 is formed by using a vacuum deposition method or a sputtering method, and is further patterned by using a known method such as photolithography. Note that a heat storage layer 502 may be provided between the substrate 521 and the heating resistor layer 503. The heat storage layer 502 is provided to prevent heat generated by causing the heat generating resistance layer 503 from escaping to the substrate 521 and to reduce the efficiency of heating the recording liquid. For the heat storage layer 502, a material having poor thermal conductivity such as SiO ₂ is used.

Next, as shown in FIG. 49B, a first protective layer 509 made of a non-electron donating material, for example, SiO ₂ , Si ₃ N _4, etc., is formed on the patterned heating resistance layer 503. Is formed using a sputtering method, a CVD method, or the like so as to have a thickness substantially equal to the required thickness of the electrode, and similarly, only a portion where the electrode is formed is removed by a method such as photolithography. At this time, a groove having the same shape as the electrode pattern is formed in the first protective layer 509. In order to selectively form an Al electrode by an organic metal CVD method, the bottom or surface of the groove needs to be electron donating. Usually, the heating resistance layer 503 plays the role.

Next, as shown in FIG. 49C, this groove is filled with a material mainly composed of Al, which is an electrode, by selective film formation by the above-mentioned metal organic chemical vapor deposition method.
9 and an electrode 514 are formed.

Subsequently, an insulating material,
For example, a _second protective layer 507 made of SiO ₂ , Si ₃ N ₄ or the like is formed by a known method. As described above, since the second protective layer 507 has a flat base, defects are less likely to occur and can be sufficiently thin. The second protective layer 507 does not need to be a single layer, and may have a multilayer structure in which the anti-cavitation layer 8 is provided on the second protective layer 507 if insulation between the electrodes is maintained. (FIG. 49D).

A more specific method for producing a liquid jet recording head substrate using the above method will be described with reference to FIGS. 49 and 50.

FIG. 50 is a perspective view showing a method of manufacturing the liquid jet recording head substrate shown in FIG.

First, a substrate 521 made of Si is made of SiO ₂
A substrate on which a heat storage layer 502 made of was formed was prepared. On this substrate, a heating resistor layer 503 as an electron donating material is formed by a sputtering method. Next, the heating resistor layer 502 is patterned by a photolithography process, and an electrode pattern is formed as a subbing layer made of an electron donating material by an organic metal CVD method (FIG. 49A).
And FIG. 50 (A)).

Next, a non-electron donating material, SiO ₂ , is formed on the pattern by an RF sputtering apparatus to form a first protective layer 509. Further, a portion of the SiO ₂ film serving as an electrode is removed by patterning in a photolithography step (FIG. 49B and FIG. 50).
(B)).

Subsequently, the organic metal CV as described above was used.
An Al film is formed to have the same thickness as the first protective layer 509 by using a D-method film forming apparatus, and a groove portion of the first protective layer 509 is filled to form an electrode 514. Observing the state of film formation, Al is selectively deposited only on HfB ₂ which is an electron donating material, and Al is not deposited on SiO ₂ which is a non-electron donating material (FIG. 49 (C) and FIG. 50 ( C)).

Finally, S was formed by RF sputtering.
iO ₂ is formed to form a second protective layer 507 (FIG. 4).
9 (D) and FIG. 50 (D)).

Further, in order to improve the cavitation-resistant property of the second protective film 507, a cavitation-resistant layer 508 made of Ta is formed on the second protective layer 507 by using the same sputtering apparatus, Obtain a recording head substrate.

FIGS. 51 and 52 are a top view showing an example of a liquid jet recording head obtained by applying the manufacturing method of the present invention, and the XY line of FIG. 51 near the thermal energy generating means of the recording head. FIG.

As shown in FIGS. 51 and 52, the liquid jet recording head applied to the present invention comprises a heating resistor layer 503 on a substrate 521 and at least a pair of electrodes 514 electrically connected to the heating resistor layer. It has at least one set of thermal energy generating means, a protective layer 509 formed in a portion where no electrode exists, and a second protective layer 507 provided thereon. Note that 51
Reference numeral 9 denotes a heat-acting surface for supplying power to the heat generating portion 518 of the heat-generating resistor layer 503 formed between the electrodes 514 and transmitting the generated heat to the recording liquid. There is no step between the steps.

In this embodiment, the electrode 514 is formed to a thickness similar to that of the first protective layer 509 by using the metal organic chemical vapor deposition method. Therefore, in this embodiment, unlike the conventional example, no irregularities are generated on the surface of the electrode. for that reason,
The upper surfaces of the first protective layer 509 and the electrode 514 can be planarized. Accordingly, in the second protective layer 507, defects such as non-uniformity which cause pinholes or cracks, which have conventionally occurred, can be eliminated. Therefore, even if the thickness of the second protective layer 507 is reduced. , Good step coverage is obtained. Incidentally, in the present embodiment, since there is no step, the thickness of the second protective layer 507 was sufficient to be half the thickness of the electrode 514.

As shown in FIG. 53, a liquid flow path 16 (width 40 μm, height 40 μm), which is a working chamber, is formed on the top plate 13.
Is formed by cutting using a micro cutter. The liquid flow path 12 is a groove serving as a common liquid chamber for supplying a recording liquid. A liquid supply pipe 19 as shown in, for example, FIG. 54 is connected to the common liquid chamber 12 as necessary, and a recording liquid is introduced from outside the recording head through the liquid supply pipe 19. When joining the top plate 13, the thermal energy generating means is sufficiently aligned so as to correspond to each of the liquid flow paths 14. Thus, the top plate 13 and the substrate 521 are joined to define the liquid discharge port 17 communicating with the working chamber. The electrode 514 is provided with a lead substrate (not shown) having electrode leads for applying a desired pulse signal from outside the recording head. In this way, a recording head substrate as shown in FIG. 54 is created.

Although not particularly described in the present embodiment, the formation of the liquid discharge port or the liquid flow path is not shown in FIG.
It is not always necessary to use a grooved plate as illustrated in the above, but it may be formed by patterning a photosensitive resin or the like. Further, the present invention is not limited to a multi-array type liquid ejecting recording head having a plurality of liquid ejecting ports as described above, and may be applied to a single array type liquid ejecting recording head having one liquid ejecting port. Of course, it can be applied.

Embodiment 12 FIG. 55 is a schematic sectional view of a liquid jet recording head.

This liquid jet recording head is manufactured as follows.

First, an SiO ₂ film 6 was formed on a substrate as a heat storage layer.
02 is formed into a film having a thickness of 2 to 3 μm using a thermal oxidation method, a CVD method, a sputtering method, or the like. The SiO ₂ film 602 is provided to prevent the heat generated in the heating resistor layer described below from escaping to the base and lowering the thermal efficiency. This heat storage layer is formed of an insulating material having poor heat conductivity. An HfB ₂ film 603 as a heating resistor layer is formed on the SiO ₂ film 602 by using, for example, a sputtering method, and an Al film is formed as a wiring material by using, for example, a sputtering method. The Al film 614 is formed by patterning the Al film to manufacture an electrothermal transducer element.

Further, if necessary, electrolytic corrosion from the recording liquid,
In order to prevent oxidation, a SiO ₂ film 608, which is a protective film having excellent heat resistance and ink shielding properties, is formed with a thickness of 1 to ₂ μm.

However, the cavitation accompanying the bubbling and defoaming of the recording liquid caused by energizing the electrothermal transducer is weak in strength only with the SiO ₂ film 608, and the reliability of the recording head is improved. Therefore, Ta, Mo, W
The formation of a cavitation-resistant film 609 is a generally adopted method. For example, when Ta is used as the anti-cavitation layer, the underlying SiO ₂ film 6 is used.
Various process conditions are optimized in order to improve the adhesion with the 08. According to research to date, the substrate temperature during film formation is set to about 200 ° C., Ta is used as a target material, Ar gas pressure is set to 10 ⁻³ to 10 ⁻⁴ Torr, and oxygen is used as a sputtering gas. And Ta
_{A 2} O ₅ film is formed on the SiO ₂ film 14 with a thickness of about 100 °. When the anti-cavitation film 609 made of Ta is provided on the Ta ₂ O ₅ film, a relatively strong adhesion is obtained.

In order to form a recording liquid supply passage for supplying the recording liquid 616 on the anti-cavitation film thus formed, a top plate 626 made of a photosensitive resin, a glass plate, or a resin molded product is used. Place.

At this time, if there is a gap between the wall surface of the adjacent recording liquid supply path and the surface of the Ta film which is an anti-cavitation layer, when a certain nozzle foams a droplet, it also affects the foaming of an adjacent nozzle. Effect. That is, a phenomenon called crosstalk occurs, which adversely affects the printing performance of the liquid jet recording apparatus. Therefore, it is desirable that the surface of the Ta film be a flat surface with as few steps as possible.

As described above, various factors may be considered as factors in improving the adhesion between the anti-cavitation layer and the underlying SiO ₂ film. In order to maintain a constant product yield in mass production, Great care must be taken with these factors.

Further, attention must be paid to contamination on the SiO ₂ film 14 due to imperfections in the cleaning process or dust generated during film formation. In addition, it is difficult to completely monitor the factors of such a process, and a lack of adhesion force of unknown cause has occurred rarely. As a result, Ta
The film is peeled off at the interface of the SiO ₂ film due to internal stress or the like, the raised SiO ₂ film 608 is damaged by cavitation, and the recording liquid 616 penetrates to the back side of the Ta film 609 to form the protective film 608. If erosion occurs, the Al electrode 614 and the recording liquid 616 may come into direct contact with each other to cause electrolysis of the recording liquid itself, or the heat generating resistance layer 603.
When power is supplied to the Al electrode 614 and the recording liquid 616, the electrode 614 or the heating resistor layer 603 may be damaged or broken (see FIG. 56).

As described above, the contamination of the surface of the SiO ₂ film 608 serving as a base, or the change in the setting conditions of the sputtering apparatus when the Ta film is formed may cause a decrease in the adhesion of the Ta film to the SiO ₂ film. was there.

In the state where the adhesion between the anti-cavitation film and the SiO ₂ film is reduced, the bubbling /
As the ejection operation was continued, the cavitation-resistant film was separated from the underlying SiO ₂ film as described above, and the role of the cavitation-resistant film was reduced. for that reason,
The recording liquid reaches the Al electrode or the heating resistor layer, causing an accident of disconnection, which has been a serious problem in terms of reliability of the liquid jet recording apparatus.

In order to achieve such an object, the recording head substrate of the present embodiment is provided with a base and provided on the base.
An electrothermal conversion element having a heating resistor layer, an electrode provided on the heating resistor layer, an island-shaped electron donating material layer provided at a predetermined position on the base, A protective film covering the conversion element and having an opening in the electron-donating material layer of the island pattern; an aluminum layer or an aluminum alloy layer filled in the opening; the protective film and the aluminum layer or the aluminum alloy layer And a cavitation-resistant layer formed so as to cover the surface.

Further, the recording head substrate of the present embodiment includes an electrothermal conversion element having a base, a heating resistor layer provided on the base, and an electrode provided on the heating resistor layer. An electron-donating material layer having an island pattern provided at a predetermined position on the substrate; a protective film covering the thermoelectric conversion element and having an opening in the electron-donating material layer having the island pattern; A recording head substrate having an aluminum or aluminum alloy layer filled with a protective film and an anti-cavitation layer formed covering the aluminum or aluminum alloy layer; and a heat-generating resistor provided on the recording head substrate. A recording liquid discharge port that discharges the recording liquid by using thermal energy supplied by the body layer.

Further, in the method of manufacturing a recording head according to the present embodiment, a step of forming a heating resistor layer on a base, providing electrodes on the heating resistor layer, and forming an island shape at a desired position on the base. A step of forming an electron-donating material layer of the pattern portion,
Forming a protective film covering the outer surfaces of the base, the heating resistor layer, the electrode, and the electron donating material layer; and patterning the protective film to expose the electron donating material layer. Forming a portion, selectively forming an aluminum layer or an aluminum alloy layer in the opening by an organometallic CVD method, and covering a cavitation-resistant layer on the protective film and the metal film.

According to this embodiment, an Al film or an aluminum alloy film is formed vertically and selectively on an island-shaped pattern portion made of an electron-donating material by the Al-CVD method. There are no "nests". If the film formation time is appropriately set, the anti-cavitation film can be formed flat, and there is no gap between the top plate and the recording head substrate, so that crosstalk can be prevented.

Further, according to the present invention, Al or an aluminum alloy is selectively formed in the opening of the protective film by the Al-CVD method, so that the adhesion between the anti-cavitation layer and the protective film is improved as compared with the conventional case. Become stronger.

FIGS. 57A and 57B are a cross-sectional view and a top view, respectively, showing a recording head substrate according to this embodiment.

An SiO ₂ film 602 as a heat storage layer is formed on a silicon wafer (not shown) as a substrate to a thickness of 2 to 3 μm. The SiO ₂ was deposited HfB ₂ film formed of an electron donating material on the heat storage layer 602, then forming an Al electrode layer, HfB ₂ as a heat generating resistor layer is patterned
The film 603 and the Al electrode 614 are formed, and an electrothermal conversion element is formed.

The HfB ₂ film 603 has a Hf
Electron-donating material layer 619 of island-shaped pattern portion made of B ₂
Is formed during the above-described patterning step.

On this electrothermal transducer, an SiO ₂ film 608 having a thickness of 1 to ₂ μm is formed as an ink-resistant protective film.

Next, a through hole is formed by patterning and opening the HfB ₂ film 619 having the island pattern.
When Al is deposited in this through-hole portion by using an Al-CVD method, HfB ₂ has an electron donating property,
Al can be selectively and vertically deposited on the B ₂ film 619. On the other hand, Al is not deposited because the SiO ₂ film 608 is a non-electron donating material.

A Ta film 621 as a cavitation-resistant layer is formed on the Al layer 620 selectively deposited in the through-hole portion of the protection layer 608 and on the SiO ₂ film 608 as an ink-resistant protection film. At this time, Al
Since the layer 620 is a metal, if a Ta film is formed by a sputtering method, an evaporation method, or the like, the affinity between Al and Ta is good. Therefore, the Ta film 621 and the Al layer 6
Adhesion with 20 is strengthened.

Therefore, even if the problematic bubbling / discharging operation of the ink is continued, the Ta film 621 remains as the underlying SiO ₂ film 6.
08, the cavitation resistance, which is the original purpose of the Ta film 621, can be improved. As a result, the Ta film 621 is not destroyed by cavitation. Therefore, when the recording liquid itself is electrolyzed by energization, or when the heating resistor layer is energized, the electrode and the recording liquid do not react and the electrode or the heating resistor layer is not damaged or destroyed. This increases the reliability of the recording head substrate.

Since the Al-CVD method is a film forming method with excellent selectivity, the gases are appropriately combined to form a mixed gas atmosphere, for example, Al-Si, Al-Ti, Al-C
A conductive material such as u, Al-Si-Ti, or Al-Si-Cu can be selectively deposited.

Although the Ta film was used as the anti-cavitation film in this embodiment, the object of the present invention can be achieved by using a metal such as W, Mo, Nb or an alloy of those metals. .

FIG. 58 is a partial sectional view of the recording head substrate of FIG. The reference numbers in FIG. 58 indicate the same configuration as the reference numbers in FIG. If the film formation time is set appropriately, Si
Al can be deposited so as to form a flat portion with the O ₂ film 608. Therefore, an anti-cavitation layer (not shown)
Even if a recording head is formed by providing a top plate thereon, the anti-cavitation layer is flat and no gap is formed between the top plate member and the anti-cavitation layer, so that no crosstalk occurs. Therefore, there is no adverse effect on the printing performance, and it is possible to provide a recording head having good ink dischargeability.

Embodiment 13 FIG. 59 is a schematic sectional view showing another embodiment of the recording head substrate of the present invention.

FIG. 59 shows a P-type or N-type silicon substrate on which an electrothermal transducer and functional elements such as an element array for separating a drive signal for driving the electrothermal transducer are provided. is there.

[0232] Such a recording head substrate can be manufactured as follows.

First, a diffusion layer 648 constituting an N-type (or P-type) functional element is formed on each of the P-type (or N-type) silicon substrates 641. An SiO ₂ film 642 serving as an insulating layer and a heat storage layer is formed on the diffusion layer 648 and patterned, and then an Al lead electrode 649 is formed and patterned. Further, on the SiO ₂ film 642 and the Al extraction electrode 649, an SiO ₂ film 643 serving as an insulating layer and a heat storage layer is further formed and patterned. Here, the SiO ₂ film 642 and the SiO ₂ film 643
Overlaps two layers to form a heat storage layer. By forming an HfB ₂ film, which is a heating resistor, and an Al electrode on the heat storage layer, an electrothermal conversion element is manufactured.
1 shows only the HfB ₂ film 644 serving as a base in order to improve the adhesion.

After the HfB ₂ film is formed and patterned, an SiO ₂ protective film 646 is formed.

Next, a through hole for an Al electrode is patterned to open a hole on the HfB ₂ film 644. Then H
Al is selectively deposited by the Al-CVD method using the fB ₂ film 644 as a base to form an Al layer 645.

Here, since the HfB ₂ film 644 is an electron donating material, Al is selectively and vertically deposited on the HfB ₂ film 64.
4 is deposited. On the other hand, since the SiO ₂ protective film 646 is a non-electron donating material, Al does not deposit on the SiO ₂ protective film 646. Al layer 645 and SiO ₂ protective film 6
A Ta layer 647 as a cavitation-resistant layer is formed on the 46 by a sputtering method or a vapor deposition method. However, since the Al layer 645 is made of metal, Al and Ta are used.
With good affinity. As a result, the Al layer 645 and T
The adhesion with the a film 647 is improved.

In the recording head substrate shown in FIG. 59, Al electrodes are arranged in a two-layer structure for connection between the electrothermal transducer and the functional element.

[0238] close to the recording liquid in the recording head substrate as shown in FIG. 59, as a base a HfB ₂ film 644 of the second layer, the Al-CVD method, it is preferable to form the Al electrode, SiO ₂ protection Film 646 and SiO ₂ film 6
Even if the 42 is patterned and opened to form an exposed through hole of the underlying silicon substrate 641, Al or an Al alloy is selectively formed on the silicon substrate 641 because the silicon substrate 641 is an electron donating material. And vertically. Therefore, even if a Ta film having cavitation resistance is formed on the Al film or the Al alloy film thus formed by using a sputtering method, an evaporation method, or the like,
Since Al and Ta are the same metal, the affinity is good and the adhesion between the Al film or the aluminum alloy film and the Ta film is improved.

A recording head is manufactured using the recording head substrate manufactured as described above.

FIG. 60 is a perspective view of the recording head of the present invention.

On the aluminum base plate 2100, a heater board 2101 having a heating element 2104 formed by patterning on a recording head substrate is adhered. The heater board 2101 is connected by wire bonding to a printed circuit board 2102 having an external lead-out terminal which is adhered on an alumina base plate 2100 and electrically connected to the outside (driver). Heater board 21
A channel may be formed on the surface 01 by patterning the dry film 2103, or a channel may be formed on a suitable flat plate such as glass by a mechanical method, an etching method, or the like.

Further, a top plate 2106 made of glass or the like is adhered on the dry film 2103, and a predetermined pattern is exposed to the photosensitive composition layer provided on the recording head substrate surface where the nozzles and the ink discharge ports 2105 are formed. By forming a cured region and removing the uncured composition from the photosensitive composition layer, a groove serving as an ink flow path is formed in the recording head substrate.

Further, a photosensitive resin is coated on the substrate, and a glass top plate is placed thereon and joined therewith, and unnecessary portions of the photosensitive resin are removed. The liquid chamber may be formed of a photosensitive resin to manufacture the top plate of the recording head.

On the top plate 2106, a member 2107 forming an ink supply path, a tube 2108 for supplying ink from outside (ink supply means), and the like are bonded. The head is
The recording is performed at a predetermined position with respect to the recording medium holding means.

As described above, according to this embodiment,
Since the Al film or the aluminum alloy film is formed vertically and selectively on the island-shaped pattern portion made of the electron donating material by the Al-CVD method, there is no "nest" as in the conventional example. If the film formation time is appropriately set, the anti-cavitation film can be formed flat, and there is no gap between the top plate and the recording head substrate, so that crosstalk can be prevented.

Further, according to this embodiment, Al or an aluminum alloy was selectively formed in the opening of the protective film by the Al-CVD method, and the anti-cavitation layer having good affinity was provided thereon. Therefore, the adhesion between the anti-cavitation layer and the protective film becomes stronger than before.

Accordingly, since the Ta ₂ O ₅ film used as the material for improving the adhesion is not required, the film forming process can be simplified, and the throughput can be improved.

The assembly of the ink jet recording head using the Si substrate 1 having the thermal energy generating element having the above-described configuration is performed, for example, through the steps shown in FIG.

FIG. 61A is a perspective view showing a schematic structure of a substrate. In FIG. 10A, reference numeral 3010 denotes an electrothermal conversion element as a discharge energy generation element. As shown in FIG. 61B, an ink liquid path wall 3011 made of a cured photosensitive resin film is formed on the Si substrate 3001 on which the electrothermal transducer 3010 is provided.
After the outer frame 3012 is formed, a cover 3013 for covering the ink liquid path wall 3011 is disposed thereon.
On the cover 3013, a filter 3015 is bonded in advance to an ink supply hole 3014 provided at the center of the cover 3013. Next, such a laminated body is cut and divided along a plane along the line CC ′ in order to optimize the space between the ink discharge port (nozzle) and the electrothermal transducer 3010.

Next, as shown in FIG. 61C, a cover 3013 for covering the ink liquid path wall 3011 is provided.
The Si substrate 3001 is removed to a predetermined depth by cutting using, for example, a diamond cutting whetstone, leaving a part of the ink liquid path around the orifice.

On the other hand, the orifice plate 3016 on which the orifice has been machined is attached in advance with an adhesive to a thin metal plate 3017 having an area larger than the orifice peripheral edge of the recording head that is not cut.

Next, after aligning the orifice plate 3016 and the thin plate 3017 with the orifice of the orifice plate 3016 and the opening of the laminated body as shown in FIG. Glue to later surfaces 3001A and 3013A. Thereby, the orifice plate 3016 is tensioned.
In contact with the opening arrangement surface of the head.

In addition, the present invention includes a means (for example, an electrothermal converter or a laser beam) for generating thermal energy as energy used for performing ink ejection, particularly in an ink jet recording system. The present invention brings about an excellent effect in a print head and a printing apparatus of a type in which a change in the state of ink is caused by energy. This is because according to such a method, it is possible to achieve higher density and higher definition of recording.

The typical configuration and principle are described in, for example, US Pat. Nos. 4,723,129 and 4,740.
It is preferable to use the basic principle disclosed in the specification of Japanese Patent No. 796. This method is a so-called on-demand type,
Although it can be applied to any type of continuous type, in particular, in the case of the on-demand type, it can be applied to a sheet holding liquid (ink) or an electrothermal converter arranged corresponding to the liquid path. By applying at least one drive signal corresponding to the recorded information and giving a rapid temperature rise exceeding the nucleate boiling, heat energy is generated in the electrothermal transducer, and film boiling occurs on the heat acting surface of the recording head. Liquid (ink) corresponding to this drive signal on a one-to-one basis.
This is effective because air bubbles inside can be formed. The liquid (ink) is ejected through the ejection opening by the growth and contraction of the bubble to form at least one droplet. When the drive signal is formed into a pulse shape, the growth and shrinkage of the bubble are performed immediately and appropriately, so that the ejection of a liquid (ink) having particularly excellent responsiveness can be achieved, which is more preferable. As the pulse-shaped drive signal, those described in US Pat. Nos. 4,463,359 and 4,345,262 are suitable. Further, if the conditions described in US Pat. No. 4,313,124 relating to the temperature rise rate of the heat acting surface are adopted, more excellent recording can be performed.

As the configuration of the recording head, in addition to the combination configuration (a linear liquid flow path or a right-angled liquid flow path) of a discharge port, a liquid path, and an electrothermal converter as disclosed in the above-mentioned respective specifications. U.S. Pat. No. 4,558,333 and U.S. Pat. No. 44,558 which disclose a configuration in which a heat acting portion is arranged in a bending region.
A configuration using the specification of Japanese Patent No. 59600 is also included in the present invention. In addition, Japanese Unexamined Patent Application Publication No. 59-123670 discloses a configuration in which a common slit is used as a discharge portion of an electrothermal transducer for a plurality of electrothermal transducers, and an aperture for absorbing a pressure wave of thermal energy is provided. The effect of the present invention is effective even if the configuration is based on JP-A-59-138461, which discloses a configuration corresponding to a discharge unit. That is, according to the present invention, recording can be reliably and efficiently performed regardless of the form of the recording head.

Further, the present invention can be effectively applied to a full-line type recording head having a length corresponding to the maximum width of a recording medium on which a recording apparatus can record. Such a recording head may have a configuration that satisfies the length by a combination of a plurality of recording heads, or a configuration as one integrally formed recording head.

In addition, even in the case of the serial type as described above, a recording head fixed to the apparatus main body or an electric connection with the apparatus main body or ink from the apparatus main body by being mounted on the apparatus main body. The present invention is also effective when a replaceable chip-type recording head that can be supplied or a cartridge-type recording head in which an ink tank is provided integrally with the recording head itself is used.

Further, it is preferable to add ejection recovery means for the recording head, preliminary auxiliary means, and the like as the configuration of the recording apparatus of the present invention since the effects of the present invention can be further stabilized. If these are specifically mentioned, the recording head is heated using capping means, cleaning means, pressurizing or suction means, an electrothermal transducer, another heating element or a combination thereof. Pre-heating means for performing the pre-heating and pre-discharging means for performing the discharging other than the recording can be used.

The type and number of recording heads to be mounted are not limited to those provided only for one color ink, for example, and for a plurality of inks having different recording colors and densities. A plurality may be provided. That is, for example, the printing mode of the printing apparatus is not limited to a printing mode of only a mainstream color such as black, but may be any of integrally forming a printing head or a combination of a plurality of printing heads. The present invention is also very effective for an apparatus provided with at least one of the recording modes of full color by color mixture.

In addition, in the embodiments of the present invention described above, the ink is described as a liquid. However, an ink which solidifies at room temperature or lower and which softens or liquefies at room temperature may be used. In general, the ink jet method generally controls the temperature of the ink itself within a range of 30 ° C. or more and 70 ° C. or less to control the temperature so that the viscosity of the ink is in a stable ejection range. Sometimes, the ink may be in a liquid state. In addition, in order to positively prevent temperature rise due to thermal energy by using it as energy for changing the state of the ink from a solid state to a liquid state, or to prevent evaporation of the ink, the ink is solidified in a standing state and heated. May be used. In any case, the application of heat energy causes the ink to be liquefied by the application of the heat energy according to the recording signal and the liquid ink to be ejected, or to start solidifying when it reaches the recording medium. The present invention is also applicable to a case where an ink having a property of liquefying for the first time is used. In such a case, the ink
JP-A-54-56847 or JP-A-60-7
As described in Japanese Patent Publication No. 1260, it is also possible to adopt a form in which the sheet is opposed to the electrothermal converter in a state where it is held as a liquid or solid substance in the concave portion or through hole of the porous sheet. In the present invention, the most effective one for each of the above-mentioned inks is to execute the above-mentioned film boiling method.

In addition, the form of the ink jet recording apparatus of the present invention is not limited to those used as image output terminals of information processing equipment such as computers, copying apparatuses combined with readers and the like, and facsimile apparatuses having a transmission / reception function. It may take a form.

The selective deposition method used in the present invention includes:
A vapor deposition method such as a CVD method or a sputtering method is preferably used.

Examples of the material to be selectively deposited include semiconductor materials such as Si and Ge, and metal materials such as Al, Cu, W, and Mo. In the case of a semiconductor material, a selective epitaxial growth method is preferable, and in the case of a metal material, a bias sputtering method or an MOCVD method is preferably used. In particular, the MOCVD method described below is preferable as the selective deposition method of the present invention.

[0264] In particular, using a monomethyl aluminum hydride (MMAH) or dimethylaluminum hydride (DMAH) as the raw material gas, a H ₂ gas as the reaction gas, good Al film by heating the substrate surface under a mixed gas thereof Can be deposited. Here, during the selective deposition of Al, the surface temperature of the substrate is preferably maintained at a temperature not lower than the decomposition temperature of the alkyl aluminum hydride and lower than 450 ° C. by direct heating or indirect heating, and more preferably 260 ° C. or higher and 440 ° C. or lower.

There are direct heating and indirect heating as a method for heating the substrate to the above-mentioned temperature range. Particularly, if the substrate is kept at the above-mentioned temperature by direct heating, a high-quality Al film can be formed at a high deposition rate. it can. For example, the substrate surface temperature at the time of forming the Al film is set to a more preferable temperature range of 260.
When the temperature is set to 440 ° C., a high-quality film can be obtained at a higher deposition rate than in the case of resistance heating of 300 ° to 5000 ° / min. Such direct heating (the energy from the heating means is directly transmitted to the substrate to heat the substrate itself)
Examples of the method include lamp heating using a halogen lamp, a xenon lamp, or the like. In addition, there is resistance heating as a method of indirect heating, which is performed using a heating element or the like provided on a substrate supporting member provided in a space for forming a deposited film for supporting a substrate on which a deposited film is to be formed. I can do it.

According to this method, if the CVD method is applied to a substrate having both an electron-donating surface portion and a non-electron-donating surface portion, Al can be obtained with good selectivity only on the electron-donating substrate surface portion. Is formed. This Al is an electrode /
It is excellent in all characteristics desired as a wiring material. That is, the probability of occurrence of hill rock and the probability of occurrence of alloy spikes are reduced.

This is because high-quality Al can be selectively formed on the surface of an electron-donating surface composed of a semiconductor or a conductor, and since the Al has excellent crystallinity, it can be used as a base with silicon or the like. It is considered that the formation of alloy spikes due to the eutectic reaction is hardly observed or extremely small. In the case where the electrode is adopted as an electrode of a semiconductor device, an effect unexpectedly obtained by the conventional technology which exceeds the concept of the Al electrode which has been conventionally considered can be obtained.

As described above, it has been described that Al formed on an electron-donating surface, for example, an insulating film and deposited in an opening exposing the surface of a semiconductor substrate has a single crystal structure.
According to the l-CVD method, the following metal film containing Al as a main component can be selectively deposited, and the film quality shows excellent characteristics.

For example, in addition to the alkyl aluminum hydride gas and hydrogen, SiH ₄ , Si ₂ H ₆ , S
i ₃ H ₈ , Si (CH ₃ ) ₄ , SiCl ₄ , SiH ₂ C
gas containing Si atoms such as l ₂ , SiHCl ₃ , TiC
gas containing Ti atoms such as l ₄ , TiBr ₄ , Ti (CH ₃ ) _4, and bisacetylacetonato copper Cu (C ₅ H ₇ O
₂ ), bis dipivaloyl methanite copper Cu (C ₁₁ H ₁₉ O)
₂ ) ₂ , bis-hexafluoroacetylacetonato copper Cu
A gas containing Cu atoms, such as (C ₅ HF ₆ O ₂ ) _2, is appropriately combined and introduced to form a mixed gas atmosphere such as Al
-Si, Al-Ti, Al-Cu, Al-Si-Ti,
The electrode may be formed by selectively depositing a conductive material such as Al-Si-Cu.

The Al-CVD method is a film formation method having excellent selectivity, and the surface property of the deposited film is good. Therefore, a non-selective film formation method is applied to the next deposition step. Then, the above-mentioned selectively deposited Al film and S
By forming Al or a metal film containing Al as a main component also on iO ₂ or the like, a highly versatile suitable metal film can be obtained as a wiring of a semiconductor device.

[0271] Such a metal film is specifically as follows. Selectively deposited Al, Al-Si, Al-
Ti, Al-Cu, Al-Si-Ti, Al-Si-C
u and Al, Al-Si, Al-T non-selectively deposited
i, Al-Cu, Al-Si-Ti, Al-Si-Cu
And the like.

As a film forming method for non-selective deposition, there are a CVD method other than the above-mentioned Al-CVD method, a sputtering method and the like.

(Film Forming Apparatus) Next, a film forming apparatus suitable for forming an electrode according to the present invention will be described.

FIGS. 62 to 64 schematically show a metal film continuous forming apparatus suitable for applying the above-described film forming method.

As shown in FIG. 62, the metal film continuous forming apparatus has a load lock chamber 1311, which is connected to each other by gate valves 1310a to 1310f so as to be able to communicate with each other while shutting off outside air, as a first film forming chamber. Reaction chamber 1
312, an RF etching chamber 1313, a sputter chamber 1314 as a second film formation chamber, and a load lock chamber 1315, each of which has an exhaust system 1316a to 1316a.
It is configured to be evacuated and decompressed by 1316e. Here, the load lock chamber 1311 is a chamber for replacing the atmosphere of the substrate before the deposition process with the atmosphere of H ₂ after evacuation in order to improve the throughput. Next CVD
The reaction chamber 1312 is a chamber for performing selective deposition on the substrate by the above-described Al-CVD method under normal pressure or reduced pressure, and is a heating resistor capable of heating the substrate surface to be formed into a film at least in the range of 200 to 450 ° C. Substrate holder 13 having 1317
18 is provided inside, and a bubbler 1319-1 is introduced into the room by a CVD raw material gas introduction line 1319.
A raw material gas such as an alkyl aluminum hydride bubbled and vaporized by hydrogen is introduced, and a hydrogen gas as a reaction gas is introduced from a gas line 1319 '. Next RF etching room 1
Reference numeral 313 denotes a chamber for cleaning (etching) the surface of the substrate after the selective deposition under an Ar atmosphere, and includes a substrate holder 1320 capable of heating the substrate at least in a range of 100 ° C. to 250 ° C. and an electrode for RF etching. Line 13
21 and the Ar gas supply line 13
22 are connected. The next sputtering chamber 1314 is a chamber for non-selectively depositing a metal film on the surface of the substrate by sputtering under an Ar atmosphere.
A substrate holder 1323 heated at a temperature in the range of up to 250 ° C. and a target electrode 1324 for mounting a sputter target material 1324a are provided, and an Ar gas supply line 1325 is connected. The last load lock chamber 1315 is an adjustment chamber before the substrate after the metal film deposition is completed is put into the outside air, and is configured to replace the atmosphere with N ₂ .

FIG. 63 shows another configuration example of a metal film continuous forming apparatus suitable for applying the above-described film forming method, and the same parts as those in FIG. 62 are denoted by the same reference numerals. FIG.
62 is different from the apparatus of FIG. 62 in that a halogen lamp 1330 is provided as direct heating means and the substrate surface can be directly heated.
A claw 1331 for holding the base in a floating state is provided at 312.
Is arranged.

By directly heating the surface of the base with this configuration, the deposition rate can be further improved as described above.

In the apparatus for continuously forming a metal film having the above structure, as shown in FIG. 64, the load lock chamber 1311, the CVD reaction chamber 131 and the transfer chamber 1326 are used as a relay chamber.
2, RF etching chamber 1313, sputtering chamber 1314,
This is substantially equivalent to a structure in which the load lock chambers 1315 are connected to each other. In this configuration, the load lock chamber 1
Reference numeral 311 also serves as a load lock chamber 1315. As shown in the figure, the transfer chamber 1326 is provided with an arm 1327 as a transfer means capable of rotating forward and backward in the AA direction and extending and contracting in the BB direction. As shown, the substrates are sequentially moved from the load lock chamber 1311 to the CVD chamber 1312 according to the process.
It can be continuously moved to the RF etching chamber 1313, the sputtering chamber 1314, and the load lock chamber 1315 without being exposed to the outside air.

(Film Forming Procedure) A film forming procedure for forming an electrode and a wiring according to the present invention will be described.

FIG. 66 is a schematic perspective view for explaining a film forming procedure for forming electrodes and wirings according to the present invention.

First, the outline will be described. A semiconductor substrate having holes formed in an insulating film is prepared, the substrate is placed in a film forming chamber, and the surface thereof is kept at, for example, 260 ° C. to 450 ° C., and a mixture of DMAH gas and hydrogen gas as alkyl aluminum hydride is prepared. Al is selectively deposited on a portion of the opening where the semiconductor is exposed by a thermal CVD method in a mixed atmosphere. Of course, as described above, a metal film containing Al as a main component such as Al-Si may be selectively deposited by introducing a gas containing Si atoms or the like. Next, Al or a metal film containing Al as a main component is non-selectively formed on the Al and the insulating film selectively deposited by the sputtering method. After that, an electrode and a wiring can be formed by patterning a metal film non-selectively deposited in a desired wiring shape.

Next, a specific description will be given with reference to FIGS. 63 and 66. First, a base is prepared. As the substrate, for example, a substrate in which an insulating film having openings of each diameter is formed on a single crystal Si wafer is prepared.

FIG. 66A is a schematic view showing a part of this base. Here, 401 is a single crystal silicon substrate as a conductive substrate, and 402 is a thermally oxidized silicon film as an insulating film (layer). 403 and 404 are openings (exposed portions), each having a different diameter.

The procedure for forming an Al film serving as an electrode as a first wiring layer on a substrate is as follows with reference to FIG.

First, the above-described base is placed in the load lock chamber 13.
11 is arranged. As described above, hydrogen is introduced into the load lock chamber 1311 to maintain a hydrogen atmosphere. Then, the inside of the reaction chamber 1312 is almost 1
Exhaust to 10 ^-8 Torr. However, Al can be formed even if the degree of vacuum in the reaction chamber 1312 is lower than 1 × 10 ⁻⁸ Torr.

Then, the bubbled DMAH gas is supplied from the gas line 1319. The carrier gas DMAH line using H _2.

[0287] The second gas line 1319 'is for of H ₂ as the reaction gas, the second gas line 319' flowing of H ₂ from the reaction chamber by adjusting the opening degree of the slow leak valve not shown The pressure in 312 is set to a predetermined value. A typical pressure in this case is approximately 1.5 Torr. DMAH
DMAH is introduced into the reaction tube from the line. The total pressure is approximately 1.5 Torr, and the DMAH partial pressure is approximately 5.0 × 10 ⁻³ T
orr. Thereafter, the halogen lamp 1330 is energized to directly heat the wafer. Thus, Al is selectively deposited.

After a predetermined deposition time has elapsed, the supply of DMAH is temporarily stopped. The predetermined deposition time of the Al film deposited in this process is defined as A time on Si (single crystal silicon substrate).
1 is the time required for the thickness of the film to become equal to the thickness of SiO ₂ (thermally oxidized silicon film), which can be obtained in advance by experiments.

At this time, the temperature of the substrate surface by the direct heating is about 270 ° C. According to the steps so far, FIG.
As shown in (B) of FIG.
405 is deposited.

The above is referred to as a first film forming step for forming an electrode in a contact hole.

After the first film forming step, the CVD reaction chamber 131
2 is exhausted by the exhaust system 1316b until a vacuum degree of 5 × 10 ⁻³ Torr or less is reached. At the same time, the RF etching chamber 1313 is evacuated to 5 × 10 ⁻⁶ Torr or less. After confirming that both chambers have reached the above-mentioned degree of vacuum, the gate valve 310c is opened, the substrate is moved from the CVD reaction chamber 1312 to the RF etching chamber 1313 by the transfer means, and the gate valve 1310c is closed. The substrate is transported to the RF etching chamber 1313, and the RF etching chamber 1313 is evacuated by the exhaust system 1316c until a vacuum degree of 10 ⁻⁶ Torr or less is reached. Thereafter, argon is supplied from an argon supply line 1322 for RF etching, and the RF etching chamber 1313 is maintained in an argon atmosphere of 10 ^-1 to 10 ^-3 Torr. Two RF etching substrate holders 1320
Maintain at about 00 ° C. and apply 10
An Rf power of 0 W is supplied for about 60 seconds to cause a discharge of argon in the RF etching chamber 1313. In this case, the surface of the substrate can be etched with argon ions to remove an unnecessary surface layer of the CVD deposited film. The etching depth in this case is about 10 which is equivalent to oxide.
It is about 0 °. Here, the surface of the CVD deposited film was etched in the RF etching chamber. However, since the surface layer of the CVD film of the substrate transported in vacuum does not contain oxygen or the like in the atmosphere, the RF etching was not performed. I can't do it. In that case, the RF etching chamber 1313 is
When the temperature difference between the reaction chamber 1312 and the sputter chamber 314 is significantly different, it functions as a temperature change chamber for changing the temperature in a short time.

In the RF etching chamber 1313, the RF
After the etching is completed, the flow of argon is stopped, and R
The argon in the F etching chamber 1313 is exhausted. RF
After evacuating the etching chamber 1313 to 5 × 10 ^-6 Torr and evacuating the sputtering chamber 1314 to 5 × 10 ^-6 Torr or less, the gate valve 310d is opened. afterwards,
The substrate is moved from the RF etching chamber 1313 to the sputtering chamber 1314 by using the transfer means, and the gate valve 1310d is moved.
Close.

After the substrate is transferred to the sputtering chamber 1314, the sputtering chamber 1314 is set in an argon atmosphere of 10 ^-1 to 10 ^-3 Torr similarly to the RF etching chamber 1313, and the temperature of the substrate holder 1323 on which the substrate is mounted is lowered. 20
Set to about 0 to 250 ° C. And D of 5-10kw
Discharge argon with C power and use Al or Al-Si
(Si: 0.5%) and a target material such as Al or Al-Si is ground on a substrate by shaving it with argon ions.
The film is formed at a deposition rate of about Å / min. This step is a non-selective deposition step. This is referred to as a second film forming step for forming a wiring connected to the electrode.

After forming a metal film of about 5000 ° on the substrate, the flow of argon and the application of DC power are stopped. After evacuating the load lock chamber 1311 to 5 × 10 ⁻³ Torr or less, the gate valve 1310e is opened to move the base. After closing the gate valve 1310e, N ₂ gas is allowed to flow into the load lock chamber 1311 until the pressure reaches atmospheric pressure, the gate valve 1310f is opened, and the substrate is taken out of the apparatus.

According to the above-described second Al film deposition step, FIG.
An Al film 1406 can be formed on the SiO ₂ film 1402 as shown in FIG.

By patterning the Al film 1406 as shown in FIG. 66D, a wiring having a desired shape can be obtained.

EXPERIMENTAL EXAMPLES The following describes, based on the experimental results, how the above-mentioned Al-CVD method is excellent and how the Al deposited in the openings is a high quality film.

First, the surface of an N-type single-crystal silicon wafer as a substrate was thermally oxidized to form 8000 ° SiO ₂ , which was cut from 0.25 μm × 0.25 μm square to 100 μm × 100.
By patterning openings of various diameters of μm square,
A plurality of exposed single crystals were prepared (Sample 1
-1).

An Al film was formed from these by an Al-CVD method under the following conditions. DMAH as source gas, hydrogen as reaction gas, total pressure 1.5 Torr, DMAH
Under a common condition of a partial pressure of 5.0 × 10 ⁻³ Torr, the amount of electric power supplied to the halogen lamp is adjusted, and the substrate surface temperature is set in the range of 200 ° C. to 490 ° C. by direct heating to form a film. Was.

The results are shown in Table 1.

[0301]

[Table 1]

As can be seen from Table 1, when the surface temperature of the substrate by direct heating is 260 ° C. or more, Al
It was selectively deposited at a high deposition rate of 〜5000 ° / min.

Examination of the characteristics of the Al film in the opening when the substrate surface temperature is in the range of 260 ° C. to 440 ° C. revealed that the film did not contain carbon, had a resistivity of 2.8 to 3.4 μΩcm, and a reflectance of 90 to 440 μm.
Hillock density of 95%, 1 μm or more is 0 to 10,
It was found that the characteristics were good, with almost no spike generation (0.15 μm junction breakdown probability).

On the other hand, when the substrate surface temperature is 200 ° C. to 2
At 50 ° C., although the film quality is slightly worse than that at 260 ° C. to 440 ° C., it is a considerably good film from the viewpoint of the prior art, but the deposition rate is not sufficiently high at 1000 to 1500 ° / min. , And the throughput was relatively low at 7 to 10 wafers / H.

When the substrate surface temperature is 450 ° C. or more, the reflectance is 60% or less, the hillock density of 1 μm or more is 10 to 10 ⁴ cm ⁻² , and the generation of alloy spikes is 0 to 30%.
, And the characteristics of the Al film in the opening decreased.

Next, how the above-described method can be suitably used for opening holes such as contact holes and through holes will be described.

That is, the present invention is preferably applied to a contact hole / through hole structure made of the materials described below.

An Al film was formed on a substrate (sample) having the following structure under the same conditions as when Al was formed on Sample 1-1.

[0309] A silicon oxide film as a second substrate surface material is formed on a single crystal silicon as a first substrate surface material by a CVD method, and is patterned by a photolithography process to partially cover the single crystal silicon surface. Was discharged.

At this time, the thickness of the thermally oxidized SiO ₂ film is 80.
00 °, the size of the exposed portion of single crystal silicon, that is, the size of the opening is 0.25 μm × 0.25 μm to 100 μm × 100 μm
Met. Thus, Sample 1-2 was prepared (hereinafter, such a sample was referred to as “CVD SiO ₂ (hereinafter, S
iO ₂ ) / single-crystal silicon ”).

[0311] Sample 1-3 is a boron-doped oxide film (hereinafter abbreviated as BSG) / single-crystal silicon formed by atmospheric pressure CVD, and Sample 1-4 is a phosphorus-doped oxide film (hereinafter PSG) formed by atmospheric pressure CVD. Abbreviated) / single-crystal silicon, sample 1-5 is a phosphorus- and boron-doped oxide film (hereinafter abbreviated as BSPG) formed by atmospheric pressure CVD / single-crystal silicon, sample 1-6 is plasma CV
D nitride film (hereinafter abbreviated as P-SiN) /
Single crystal silicon, sample 1-7 is a thermal nitride film (hereinafter T-
Sample 1-8 is a nitride film (hereinafter abbreviated as LP-SiN) / single-crystal silicon, and sample 1-9 is a nitride film (hereinafter abbreviated as LP-SiN) formed by an ECR apparatus. ECR-SiN)
/ Single-crystal silicon.

Further, the following first substrate surface material (1
Samples 11-11 to 1-179 (Note: Sample Nos. 1-10, 20, 30, 40, 50, 60, 7)
0,80,90,100,110,120,130,1
40, 150, 160, and 170 are missing numbers). Single-crystal silicon (single-crystal Si) as the first substrate surface material,
Polycrystalline silicon (polycrystalline Si), amorphous silicon (amorphous Si), tungsten (W), molybdenum (Mo),
Tantalum (Ta), tungsten silicide (WS
i), titanium silicide (TiSi), aluminum (Al), aluminum silicon (Al-Si), titanium aluminum (Al-Ti), titanium nitride (Ti-N), copper (Cu), aluminum silicon copper (Al- Si-Cu), aluminum palladium (Al
-Pd), titanium (Ti), molybdenum silicide (M
o-Si) and tantalum silicide (Ta-Si) were used. T-SiO ₂ , Si as the second substrate surface material
O ₂ , BSG, PSG, BPSG, P-SiN, TS
iN, LP-SiN and ECR-SiN. For all the samples as described above, a favorable Al film comparable to the above-mentioned sample 1-1 could be formed.

Next, the substrate on which Al was selectively deposited as described above was non-selectively formed of Al by the sputtering method described above.
Was deposited and patterned.

As a result, the Al film formed by the sputtering method and the Al film selectively deposited in the opening have good electrical and mechanical durability due to the good surface property of the Al film in the opening. High contact state.

Experimental Example 1 An ink jet recording head was prepared in accordance with Example 1 described above. A silicon oxide film having a thickness of 1 μm was formed on the surface of the Si wafer by a sputtering method.

Next, hafnium boride having a thickness of 0.1 μm was formed as the heating resistance layer 3 by a sputtering method.

To form the electrode 14, a 0.5 μm Al film was formed by an electron beam evaporation method.

The heating resistor layer 3 and the Al film 14 were patterned into the shape shown in FIG. 9 by etching to form electrothermal transducers (14, 18).

[0319] A silicon oxide film having a thickness of 1 µm was formed by a sputtering method. A contact hole 5 was formed in the silicon oxide film 8 by etching.

An Al film having a thickness of 1 μm was deposited in the contact hole at a substrate temperature of 250 ° C. by a CVD method using DMAH and hydrogen.

An Al film 4 having a thickness of 0.5 μm was formed again by the electron beam evaporation method. Then, the Al film 4 was patterned into a wiring shape. A 0.6 μm thick silicon oxide was formed thereon by a sputtering method. Thus, a recording head substrate having an Al two-layer wiring structure was prepared. A top plate indicated by reference numeral 13 in FIG. 9 was bonded to the recording head substrate to produce a plurality of recording head samples as shown in FIG.

COMPARATIVE EXAMPLE 1 A recording head substrate was manufactured by the other steps except the Al selective deposition step in all the steps in Experimental Example 1 described above.
Recording head (Sample C11) with top plate 13 attached
Was prepared.

A plurality of recording head samples in which the thickness of the Al film 4 was in the range of 0.2 μm to 3 μm and the thickness of the silicon oxide film 26 was 0.6 μm to 2 μm were also manufactured by the same steps as described above (samples). C12).

When the recording heads of Example 1 and Comparative Example 1 were compared, the following effects were confirmed.

1) Since there is no step between the through hole and the insulating protective layer, good step coverage can be obtained. Therefore, the thickness of the Al film 4 required 2 μm in the comparative example, whereas the thickness of the Al film 4 was 0 in the experimental example. .1 μm or less, and the disconnection of the electrode portion was reduced.

2) For the same reason as in 1), the thickness of the protective film 26 was 1.5 μm in the comparative example, but could be 0.75 μm or less in the experimental example 1.
Film defects such as pinholes also decreased.

3) Unlike the polycrystalline Al film obtained by the conventional sputtering method or electron beam evaporation method, the Al film formed by the CVD method of Experimental Example 1 has improved crystallinity. Since the resistivity is as low as 0.7 to 3.4 μΩ · cm, a large amount of current can flow. In addition, since Al can be selectively deposited in the through hole, the aspect ratio can be increased.

Experimental Example 2 An ink jet recording head was manufactured by the method of Example 2 described with reference to FIG.

First, a silicon oxide film 102 serving as a non-electron donating material as a heat storage layer was formed on a substrate 121 made of Al serving as an electron donating material having a thickness of 2.0 mm by a sputtering method. Substrate 12 to be thick
1 was formed over the entire surface. Then, after applying a resist, a through hole was formed by a patterning process, and unnecessary portions were removed.

Next, dimethylalkyl hydride (D
MAH) as a raw material, using hydrogen as a reaction gas, and a total gas pressure of 1.5 Torr and a partial pressure of DMAH of 10 ⁻² by a CVD method.
Al under the conditions of Torr and a film forming temperature of 270 ° C.
Was deposited to have the same thickness as the heat storage layer (SiO ₂ film). Observation of the deposition state shows that Al is selectively deposited only on the exposed portion of the Al substrate 121 which is an electron donating material, and that Al is not deposited on the silicon oxide film 102 which is a non-electron donating material. all right. Under the conditions described above, the film formation rate was 800 ° / min.

Next, HfB ₂ was deposited on the entire surface to a thickness of 1000 ° by a sputtering method.
Was formed. On the heating resistor 103, a Ti film (not shown) is formed with a thickness of 50.degree. To improve the adhesion to the electrodes, and a heating resistor pattern having a size of 24 .mu.m.times.60 .mu.m is formed at a pitch of 42 .mu.m by a patterning process. 48 pixels were formed at a pixel density of 600 dpi).

[0332] Further, by sputtering,
An electrode 124 was formed by depositing a thickness of 000 mm, forming individual electrodes, and patterning.

Subsequently, a silicon oxide film 108 was formed as a protective layer for the heating resistor 103 and the electrode 124 by 1.0 μm.
An unnecessary portion was removed by patterning with a thickness of m.

A liquid flow path wall and an ink discharge port are provided on the base having the heating resistor element array prepared as described above, that is, an ink jet recording head substrate, in order to form an ink discharge port for discharging a recording liquid. A top plate having a groove formed as desired was aligned and joined. Then, a common liquid chamber for supplying the recording liquid to the liquid flow path which is the working chamber was provided. A liquid supply pipe was connected to the common liquid chamber as needed, and a recording liquid was introduced from outside the recording head through the liquid supply pipe. Thus, an ink jet recording head was manufactured.

The ink jet recording head of this embodiment was mounted on a drive unit, and a rectangular wave of 5 μsec was applied at 20 V and 5 KHz to discharge a recording liquid (water: 70 parts, diethylene glycol: 28 parts, aqueous dye: 2 parts). Was. As a result, it was confirmed that the ejection state of the recording liquid was extremely stable, and the obtained recorded image was also high-definition, and was excellent even in continuous ejection of the recording liquid. Further, no defect in the through-hole portion was observed at all in the current test of 100 million pulses.

Experimental Example 3 In this example, as in Experimental Example 2, a silicon oxide film 102 as a heat storage layer was formed on the entire surface of a substrate 121 made of Al by sputtering, and a resist was applied. A hole is formed and Al-C
An Al film 114 was deposited in the through hole by the VD method.

In Experimental Example 2, the heating resistor layer 103
Was formed to a thickness of 2500 ° by a sputtering method using an alloy target composed of Al, Ta, and Ir.
The difference from Experimental Example 2 is that the heating resistor layer 103 has no protective film in direct contact with the recording liquid.

[0338] Au was deposited at 500 by electron beam evaporation.
It was deposited to a thickness of 0 ° to form individual electrodes. afterwards,
The electrode pattern 124 was formed by patterning. 101 is a heat acting surface.

Thereafter, an ink jet recording head was prepared through the same procedure as in Experimental Example 2.

When this ink jet recording head was attached to an electric drive and the same recording liquid was ejected as in Experimental Example 2, the recording liquid could be ejected very stably. The temperature rise during energization was suppressed to about の of that in Experimental Example 2. Further, when the power consumption for discharging the recording liquid was measured, in this example, it was 0.35 mW / μm ² per unit area of the heating resistor.
This corresponds to about 45% of Experimental Example 2, and low power consumption was realized.

Experimental Example 4 A recording head was manufactured in accordance with the steps of Example 3 described above.

As a result, the obtained recording head was excellent in durability.

Experimental Example 5 A recording head was manufactured in accordance with Example 11 described above.

First, a 2.5 μm thick SiO ₂ was formed on a Si substrate.
A substrate having a layer was prepared, and a heating resistance layer 502, a first protective layer 509, an electrode 514, a second protective layer 507, and a cavitation-resistant layer 508 were formed according to the conditions shown in Table 2.
The size of the heat generating portion was a rectangular shape having a width of 30 μm and a length of 150 μm.

On the other hand, a top plate 13 as shown in FIG.

The top plate 13 and the substrate 521 on which the heat generating portion was formed were bonded to produce a recording head as shown in FIG.

[0347] The recording head manufactured in this manner consumes about 30% less power than the conventional recording head, improves the thermal response by about 30%, and can be driven with a shorter pulse width than the conventional recording head. Also improved. In addition, foaming stability was increased by pulse driving with a short width, ejection stability of the number of recordings was improved, and recording quality was improved.

[0348]

[Table 2]

[0349]

As described above, according to the present invention,
The selective deposition method is used. Specifically, the selective deposition method is used in a step of forming at least a part of an electrode of an electrothermal transducer or a step of forming a member provided for flattening a substrate surface. Things.

That is, in the conventional method, a deposit is selectively formed only in a portion where a concave portion is formed, so that a large uneven surface does not occur.

[Brief description of the drawings]

FIG. 1 is a schematic diagram for explaining a conventional recording head.

FIG. 2 is a schematic top view showing thermal energy generating means of a conventional recording head.

FIG. 3 is a schematic cross-sectional view taken along line AA ′ of FIG.

FIG. 4 is a schematic sectional view showing a connection portion of a conventional recording head.

FIG. 5 is a schematic cross-sectional view for explaining a manufacturing process of the connection portion of the recording head according to the first embodiment of the present invention.

FIG. 6 is a schematic cross-sectional view for explaining a manufacturing process of a connection portion of the recording head according to the first embodiment of the present invention.

FIG. 7 is a schematic cross-sectional view for explaining a manufacturing process of the connection portion of the recording head according to the first embodiment of the present invention.

FIG. 8 is a schematic cross-sectional view for explaining a manufacturing process of a connection portion of the recording head according to the first embodiment of the present invention.

FIG. 9 is a schematic diagram for explaining a manufacturing process of the recording head according to the first embodiment of the present invention.

FIG. 10 is a schematic perspective view for explaining a recording head according to Embodiment 1 of the present invention.

FIG. 11 is a schematic top view illustrating a recording head according to a second embodiment of the present invention.

FIG. 12 is a schematic cross-sectional view taken along line AA ′ of FIG.

FIG. 13 is a schematic diagram for explaining a manufacturing process of the recording head according to the second embodiment of the present invention.

FIG. 14 is a schematic cross-sectional view for explaining a recording head according to another embodiment of the present invention.

FIG. 15 is a schematic diagram for explaining a manufacturing process of a recording head according to Embodiment 3 of the present invention.

FIG. 16 is a schematic diagram for explaining a manufacturing process of the recording head according to Embodiment 3 of the present invention.

FIG. 17 is a schematic diagram for explaining a manufacturing process of the recording head according to Embodiment 3 of the present invention.

FIG. 18 is a schematic diagram for explaining a manufacturing process of the recording head according to Embodiment 3 of the present invention.

FIG. 19 is a schematic diagram for explaining a manufacturing process of the recording head according to Embodiment 3 of the present invention.

FIG. 20 is a schematic diagram for explaining a manufacturing process of the recording head according to Embodiment 3 of the present invention.

FIG. 21 is a perspective view for explaining a manufacturing process of a recording head according to Embodiment 3 of the present invention.

FIG. 22 is a schematic diagram for explaining a manufacturing process of the recording head according to the third embodiment of the present invention.

FIG. 23 is a schematic diagram for explaining a manufacturing process of the recording head according to the third embodiment of the present invention.

FIG. 24 is a schematic diagram for explaining a recording head according to Embodiment 3 of the present invention.

FIG. 25 is a schematic diagram for explaining the effect of the fourth embodiment of the present invention.

FIG. 26 is a schematic diagram for explaining effects of the fourth embodiment of the present invention.

FIG. 27 is a schematic top view showing a thermal energy generating means of the recording head of the present invention.

FIG. 28 is a schematic sectional view taken along the line BB ′ in FIG. 27;

FIG. 29 is a schematic diagram for explaining a manufacturing process of the recording head according to Embodiment 5 of the present invention.

FIG. 30 is a schematic diagram for explaining a manufacturing process of the recording head according to Embodiment 5 of the present invention.

FIG. 31 is a schematic diagram for explaining a manufacturing process of a recording head according to Embodiment 6 of the present invention.

FIG. 32 is a schematic diagram for explaining a manufacturing process of a recording head according to Embodiment 6 of the present invention.

FIG. 33 is a schematic diagram for explaining the manufacturing process of the recording head according to Embodiment 7 of the present invention.

FIG. 34 is a schematic top view for explaining a recording head according to Embodiment 8 of the present invention.

FIG. 35 is a schematic sectional view taken along line DD ′ of FIG. 34;

FIG. 36 is a schematic top view for explaining a recording head according to Embodiment 8 of the present invention.

FIG. 37 is a schematic sectional view taken along line EE ′ of FIG. 36;

FIG. 38 is a schematic top view for explaining a recording head according to Embodiment 8 of the present invention.

FIG. 39 is a schematic sectional view taken along line FF ′ of FIG. 38;

FIG. 40 is a schematic top view for explaining a recording head according to Embodiment 8 of the present invention.

FIG. 41 is a schematic sectional view taken along line GG ′ of FIG. 40;

FIG. 42 is a schematic top view for explaining a recording head according to Embodiment 8 of the present invention.

FIG. 43 is a schematic sectional view taken along line HH ′ of FIG. 42;

FIG. 44 is a perspective view for explaining the structure of a recording head according to Embodiment 8 of the present invention.

FIG. 45 is a schematic diagram for explaining the method for manufacturing the recording head according to the ninth embodiment of the present invention.

FIG. 46 is a schematic diagram for explaining the method for manufacturing the recording head according to the ninth embodiment of the present invention.

FIG. 47 is a schematic diagram for explaining the method for manufacturing the recording head according to the ninth embodiment of the present invention.

FIG. 48 is a schematic view for explaining the method for manufacturing the recording head according to the ninth embodiment of the present invention.

FIG. 49 is a schematic diagram for explaining the method for manufacturing the recording head according to Embodiment 11 of the present invention.

FIG. 50 is a schematic view for explaining the method for manufacturing the recording head according to Embodiment 11 of the present invention.

FIG. 51 is a schematic top view for explaining a recording head substrate according to Embodiment 11 of the present invention.

FIG. 52 is a schematic sectional view taken along line XY of FIG. 51.

FIG. 53 is a schematic perspective view for explaining a top plate of a recording head according to Embodiment 11 of the present invention.

FIG. 54 is a schematic perspective view showing the appearance of a recording head according to the present invention.

FIG. 55 is a schematic diagram for explaining effects of the twelfth embodiment of the present invention.

FIG. 56 is a schematic diagram for explaining effects of the twelfth embodiment of the present invention.

FIG. 57 is a schematic diagram for explaining a recording head according to Embodiment 12 of the present invention.

FIG. 58 is a schematic sectional view showing a part of a recording head according to Embodiment 12 of the present invention.

FIG. 59 is a schematic sectional view for explaining a recording head according to Embodiment 13 of the present invention.

FIG. 60 is a schematic diagram for explaining a recording head according to the present invention.

FIG. 61 is a schematic view for explaining the manufacturing process of the recording head according to the present invention.

FIG. 62 is a schematic diagram for explaining an example of a deposited film forming apparatus used in a manufacturing process of a recording head according to the present invention.

FIG. 63 is a schematic view for explaining another example of the deposited film forming apparatus used in the manufacturing process of the recording head according to the present invention.

FIG. 64 is a schematic diagram for explaining the operation of the deposited film forming apparatus used in the manufacturing process of the recording head according to the present invention.

FIG. 65 is a schematic diagram for explaining the operation of the deposited film forming apparatus used in the manufacturing process of the recording head according to the present invention.

FIG. 66 is a schematic diagram for explaining a deposited film forming step used in the manufacturing process of the recording head according to the present invention.

[Explanation of symbols]

 Reference Signs List 2 accumulation layer 3 heat generating resistance layer 4 wiring 5 contact hole 7 protective layer 12 common ink chamber 13 top plate member 14 Al electrode 16 ink flow path 17 ink discharge port 18 heat generation section 19 ink supply port 21 substrate

──────────────────────────────────────────────────続 き Continuation of the front page (31) Priority claim number Japanese Patent Application No. 3-175244 (32) Priority date July 16, 1991 (July 16, 1991) (33) Priority claim country Japan (JP) (72) Inventor Takashi Fujikawa 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Makoto Shibata 3-30-2 Shimomaruko 3-chome, Ota-ku, Tokyo Canon Inc. (72) Invention Person Hirokazu Komuro 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Isao Kimura 3-30-2, Shimomaruko 3-chome in Canon Inc. (72) Kenji Hasegawa, inventor 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (56) References JP-A 1-222351 (JP, A) JP-A 2-79446 (JP, A) JP-A 3-57219 ( JP, A) 83454 (JP, A) JP-A-2-188252 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) B41J 2/05 B41J 2/16

Claims (37)

(57) [Claims] 1. A head for an ink jet recording apparatus having an ejection energy generating element for generating thermal energy used for ejecting ink, a conductor formed by a selective CVD method on a substrate having a conductive surface. A flat heating resistor layer is provided on a flat surface formed by the insulating layer and the insulating layer, and the discharge energy generating element is formed by providing a protective layer on the heating resistor layer. Features head. 2. The head according to claim 1, wherein the insulating layer is a heat storage layer of the electrothermal transducer. 3. The head according to claim 1, wherein the conductor is made of a metal containing aluminum as a main component. 4. The head according to claim 1, wherein the head has an ink chamber for storing ink and a plurality of ink ejection ports communicating with the ink chamber. 5. The head according to claim 1, wherein the head discharges ink in a direction substantially parallel to a heat generating surface of the electrothermal transducer. 6. The head according to claim 1, wherein the head discharges ink in a direction substantially intersecting with a heat generating surface of the electrothermal transducer. 7. The head according to claim 1, wherein the head has an ink chamber that stores ink, and the ink chamber is stored in the ink chamber. 8. An ink jet recording apparatus comprising: the head according to claim 1; and means for holding a recording medium at a recording position. 9. A head for an ink jet recording apparatus having an ejection energy generating element for generating thermal energy used for ejecting ink, a conductor formed by a selective CVD method on a substrate having a semiconductor surface. A flat heating resistor layer is provided on a flat surface formed by the insulating layer and the insulating layer, and the discharge energy generating element is formed by providing a protective layer on the heating resistor layer. Features head. 10. The head according to claim 9, wherein the insulating layer is a heat storage layer of the electrothermal transducer. 11. The head according to claim 9, wherein the conductor is made of a metal containing aluminum as a main component. 12. The head according to claim 9, wherein the head has an ink chamber for storing ink and a plurality of ink ejection ports communicating with the ink chamber. 13. The head according to claim 9, wherein the head discharges ink in a direction substantially parallel to a heat generating surface of the electrothermal transducer. 14. The head according to claim 9, wherein the head discharges ink in a direction substantially intersecting a heat generating surface of the electrothermal transducer. 15. The head according to claim 9, wherein the head has an ink chamber for storing ink, and ink is stored in the ink chamber. 16. An ink jet recording apparatus comprising: the head according to claim 9; and means for holding a recording medium at a recording position. 17. A head for an ink jet recording apparatus having an ejection energy generating element for generating thermal energy used for ejecting ink, comprising a substrate having a semiconductor surface, and a pair provided on the substrate. A flat heating resistor layer is provided on a flat surface formed by an insulating layer having an opening and a conductor formed by selective CVD in a pair of openings of the insulating layer. A head, wherein an ejection energy generating element is formed by providing a protective layer on a resistor layer. 18. The head according to claim 17, wherein the insulating layer is a heat storage layer of the electrothermal transducer. 19. The head according to claim 17, wherein the conductor is made of a metal containing aluminum as a main component. 20. The head according to claim 17, wherein the head has an ink chamber for storing ink and a plurality of ink ejection ports communicating with the ink chamber. 21. The head according to claim 17, wherein the head discharges ink in a direction substantially parallel to a heat generating surface of the electrothermal transducer. 22. The head according to claim 17, wherein the head discharges ink in a direction substantially intersecting a heat generating surface of the electrothermal transducer. 23. The head according to claim 17, wherein the head has an ink chamber for storing ink, and the ink is stored in the ink chamber. 24. An ink jet recording apparatus comprising: the head according to claim 17; and means for holding a recording medium at a recording position. 25. An ink jet recording apparatus head having an ejection energy generating element for generating thermal energy used to eject ink, comprising: a substrate having an insulating surface provided with a pair of concave portions; A flat heating resistor layer is provided on a flat surface formed by the pair of conductors formed in the pair of recesses by the selective CVD method and the insulating surface, respectively,
The head further comprises a protective layer provided on the heating resistor layer to form an ejection energy generating element. 26. The head according to claim 25, wherein the conductor is made of a metal containing aluminum as a main component. 27. The head according to claim 25, wherein the head has an ink chamber for storing ink and a plurality of ink ejection ports communicating with the ink chamber. 28. The head according to claim 25, wherein the head discharges ink in a direction substantially parallel to a heat generating surface of the electrothermal transducer. 29. The head according to claim 25, wherein the head discharges ink in a direction substantially intersecting with a heating surface of the electrothermal transducer. 30. The head according to claim 25, wherein the head has an ink chamber for storing ink, and ink is stored in the ink chamber. 31. An ink jet recording apparatus comprising: the head according to claim 25; and means for holding a recording medium at a recording position. 32. A method for manufacturing a head for an ink jet recording apparatus having an ejection energy generating element for generating thermal energy used for ejecting ink, comprising: forming an insulating layer on a substrate having a conductive surface; Forming an opening in the insulating layer where the conductive surface is exposed; forming a conductor in the opening by a selective CVD method; forming a substantially flat surface with the conductor and the insulating layer; Forming a flat heating resistor layer on the substantially flat surface, forming a conductive layer connected to the heating resistor layer on the insulating layer, and providing a protective layer on the heating resistor layer A step of forming the ejection energy generating element. 33. A method of manufacturing a head for an ink jet recording apparatus having an ejection energy generating element for generating thermal energy used for ejecting ink, comprising: a semiconductor region defined by a semiconductor junction on a surface side of a semiconductor substrate; A plurality of openings, an insulating layer is formed on the semiconductor substrate, a plurality of openings for exposing the semiconductor region are provided in the insulating layer, and a conductor is formed in the openings of the insulating layer by a selective CVD method. Forming a substantially flat surface with the conductor and the insulating layer, forming a flat heating resistor layer on the substantially flat surface, and providing a protective layer on the heating resistor layer A step of forming the ejection energy generating element. 34. A method of manufacturing a head for an ink jet recording apparatus having an ejection energy generating element for generating thermal energy used for ejecting ink, comprising: forming an insulating layer on a substrate having a semiconductor surface; A pair of openings for exposing a surface of the semiconductor are provided in the insulating layer; a conductor is formed in the opening of the insulating layer by a selective CVD method; and the conductor and the insulating layer are substantially flat. Forming a surface, forming a flat heating resistor layer on the substantially flat surface, and providing a protective layer on the heating resistor layer to form the discharge energy generating element. A method for manufacturing a head, comprising: 35. A method of manufacturing a head for an ink jet recording apparatus having an ejection energy generating element for generating thermal energy used for ejecting ink, comprising: forming a pair of recesses on a substrate having an insulating surface; A conductor is formed in the pair of recesses by a selective CVD method to form a substantially flat surface between the conductor and the surface, and a flat heating resistor is formed on the substantially flat surface. Forming a layer, and forming a discharge energy generating element by providing a protective layer on the heating resistor layer. 36. The method according to claim 32, further comprising a step of injecting the ink into the ink container.
The method for manufacturing a head according to any one of the above. 37. The conductor according to claim 32, wherein the conductor is made of a metal containing aluminum as a main component.
7. The method for manufacturing a head according to any one of 6.