JP3397532B2 - Base for liquid jet recording head and method of manufacturing the same - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid jet recording head substrate having an electrothermal converting element and a recording functional element formed on a substrate, and a method for manufacturing the liquid jet recording head substrate, and more particularly to a copying machine, The present invention relates to a recording head used in an inkjet recording apparatus used for a facsimile, a word processor, an output printer of a host computer, a video output printer, and the like, and a method of manufacturing the recording head.

[0002]

2. Description of the Related Art A liquid jet recording method (inkjet recording method) has an extremely small noise generation at the time of recording, is capable of high-speed recording, and requires a special treatment of fixing on so-called plain paper. I am interested in the fact that I can record without doing it.

Among them, for example, JP-A-54-51837.
The liquid jet recording method described in Japanese Laid-Open Patent Publication No. 2843064 (German Publication) discloses that other liquid jet recording is performed in that thermal energy is applied to the liquid to obtain a driving force for droplet ejection. It has different characteristics from the law.

That is, in the recording method disclosed in the above publication, the liquid subjected to the action of thermal energy undergoes a state change accompanied by a sharp increase in volume, and the action force based on the state change causes the recording head portion to change. Liquid is ejected from the tip orifice to form flying droplets, and the droplets adhere to the recording member to perform recording.

In particular, the liquid jet recording method disclosed in DOLS 2843064 is a so-called drop-on.
Not only is it very effectively applied to the demand recording method, but a recording head having a full line type high density multi-orifice can be easily embodied, so that high resolution and high quality images can be obtained at high speed. It has the characteristics of

The recording head portion of the recording apparatus to which the above-mentioned recording method is applied is provided with an orifice provided for ejecting a liquid, and thermal energy for ejecting a liquid droplet is applied to the liquid so as to communicate with the orifice. The liquid ejecting section has a liquid flow path whose part is a heat acting section, and an electrothermal converter as means for generating thermal energy.

The electrothermal converter comprises a pair of electrodes and a heating resistance layer which is connected to these electrodes and has a region (heat generating portion) for generating heat between these electrodes. The pair of electrodes is generally composed of a selection electrode and a common electrode, and the heat generation section generates heat energy for discharging droplets from the orifice by energizing the electrodes.

A protective layer is usually provided on these heat generating portions and at least on the electrodes provided under the region where the liquid flows or stays in the recording head. The protective layer chemically and physically protects the electrodes and the heat-generating resistance layer forming the heat generating portion from the liquid above them, and short-circuits between the electrodes and the same kind of electrodes that occur through the liquid, In particular, it is provided in order to prevent leakage between the selective electrodes, and also to prevent electric contact of the electrodes caused by contact between the liquid and the electrodes and energization of the liquid.

The protective layer has different required properties depending on the place where it is provided. For example, on the heat generating portion, heat resistance, liquid resistance, liquid permeation prevention, thermal conductivity, oxidation resistance, and insulation are provided. , And excellent resistance to puncture are required. In areas other than the heat-generating part, it is relaxed under thermal conditions, but sufficient for liquid permeation prevention, liquid resistance, insulation and puncture resistance. It is required to be excellent.

However, a single protective layer material capable of covering only the protective film satisfying all of the above-mentioned characteristics (1) to (7) as desired and further covering all of the heat generating portion and the electrode is In an actual recording head, various materials that complement each other in characteristics required depending on the place where they are provided are selected, and a protective layer is formed by a plurality of layers made of those materials. In such a multi-layered protective layer, the adhesive force between the newly laminated overlapping layers is sufficiently strong, and adhesion such as peeling or floating between layers is caused during the manufacturing process of the recording head and the actual use period. It is required that a failure due to a decrease in force does not occur.

On the other hand, in addition to these, in the case of a multi-orifice type liquid jet recording head, in order to simultaneously form a large number of fine electrothermal transducers on the substrate, each layer is formed on the substrate during the manufacturing process. And the removal of a part of the formed layer are repeated, and at the stage where the protective layer is formed, the back surface on which the protective layer is formed has fine irregularities with slap wedge portions (step portions). Therefore, the coverage of the protective layer on the stepped portion (Step cover
(rage property) is important. That is, if the coverage of the step portion is poor, the penetration of the liquid occurs in that portion, which causes an electric contact or an electrical breakdown. Further, when the protective layer formed has a high probability of producing a defective portion in the manufacturing method, penetration of the liquid occurs through the defective portion, which is a factor that significantly shortens the life of the electrothermal converter. There is.

For these reasons, the protective layer has good coverage at the step portion, and the probability that defects such as pinholes are generated in the formed layer is low, and even if it occurs, it can be practically ignored. , Or even less.

In particular, the heat-acting surface is under severe conditions in which a cycle of thousands of vigorous temperature changes between high temperature and low temperature is repeated, and the liquid on the heat-acting surface is vaporized at high temperature. The pressure in the liquid flow channel decreases as the temperature rises and the pressure inside the liquid flow channel rises, and the vaporized liquid condenses as the temperature drops and the bubbles disappear. The mechanical stress caused by these is constantly applied. Therefore, the protective layer provided so as to cover at least the upper surface of the heat generating portion is required to have excellent impact resistance against mechanical stress and excellent adhesiveness between a plurality of layers forming the protective layer.

FIG. 5 is a schematic sectional view and a plan view showing the vicinity of a heat generating portion of a conventional recording head substrate.

Conventionally, as the protective layer, a laminated film of a dielectric film and a Ta film has been used as a combination satisfying various characteristics required for the protective layer described above. FIG. 5 shows the protective films 510 and 520 and the heat generating resistance layer 540 having the above-described structure.
Also, a laminated structure in the vicinity of the electrothermal converter (heat generating portion) 550 formed by the wiring layer 530 is shown.

In the structure shown in FIG. 5, the heating resistor layer 540 and the wiring layer 530 are continuously deposited on the substrate 560, and then the wiring layer 530 and the heating resistor layer 540 are sequentially patterned by the photolithography method to form the heating portion 550. After forming
It is formed by successively depositing the protective layers 510 and 520.

At this time, a Ta film is used for the protective layer 510 and a dielectric film such as SiO or SiN is used for the protective layer 520. In the structure shown in FIG. 5, since the protective film 510 made of conductive Ta and the wiring layer 530 are close to each other via the protective layer 520, the protective layer 520 of the protective layer 520 is prevented from the viewpoint of preventing a short circuit between the protective film 510 and the wiring layer 530. The film thickness is usually required to be about 1 μm.

[0018]

However, the heat generating part 550 is required.
In order to efficiently transfer the heat energy generated from the liquid 500 to the liquid 500, it is desirable that the protective film 520 immediately above the heat generating portion 550 be as thin as possible. Therefore, the heat generating portion 55
If the structure is such that only the protective film 520 immediately above 0 is thin and the other protective film 520 is thick, the heat generating part 550 is formed.
It is possible to increase the efficiency of using the more generated heat as energy for foaming the liquid 500.

However, no combination and process of a protective film and a heating resistor having the processing characteristics necessary for forming the above structure and having sufficient properties as a recording head material have been found.

The present invention has been made in order to solve the above-mentioned problems in the structure of the recording head substrate. The power consumption is low, and the generated heat energy can be efficiently transmitted to the liquid and ejected. An object is to provide a substrate for a liquid jet recording head and a method for manufacturing the same.

[0021]

Therefore, a liquid jet recording head substrate and a method of manufacturing the same according to the present invention include (1) a plurality of electrothermal converting elements and a plurality of wirings respectively connected to the electrothermal converting elements. in the liquid jet recording head substrate provided with an electrode on a substrate, a first protective layer provided in a region immediately above the heat generating portion of at least the electrothermal transducer on the substrate surface, and a portion of the heat generating unit Including the width of the heat generating part
An opening with a wider width is provided, and the heat generating part and the heat generating
A second protective film formed so that the surface of the base body around the portion is not exposed from the opening is also provided , and the second protective film is formed on the stepped portion of the wiring electrode.
A substrate for a liquid jet recording head, wherein the protective film thickness on the heat generating portion is smaller than the protective film thickness .

(2) The liquid jet recording head substrate as described in (1) above, wherein the first protective film is made of silicon nitride, silicon oxide, silicon oxynitride or phosphorous glass.

(3) The liquid jet recording head substrate according to (1) above, wherein the first protective film has a thickness of 0.1 μm or more, and (4) the second protective film is silicon oxide. The liquid jet recording head substrate according to (1) above, which is silicon oxynitride or phosphorous glass, and (5) the heat generating portion of the electrothermal conversion element is tantalum nitride. A substrate for a liquid jet recording head as described above.

(6) In a recording head substrate in which a plurality of electrothermal conversion elements and a plurality of wiring electrodes respectively connected to the electrothermal conversion elements are provided on the substrate, insulation is provided on the surface of the substrate below the electrothermal conversion elements. provided membrane, provided the first protective film in the area directly above the heat generating portion of the at least electric transducing element, further
In the area immediately above the insulation Enmaku near the heat generating portion and the heat-generating portion
A second protective film having an opening having a width wider than that of the heat generating portion is provided , and the heat generating portion is formed based on the protective film thickness on the stepped portion of the wiring electrode.
A substrate for a liquid jet recording head, characterized in that the upper protective film is thin .

(7) The substrate for a liquid jet recording head according to the above (6), wherein the insulating film is made of silicon nitride, (8) the first protective film is made of silicon nitride, silicon oxide, silicon oxynitride or The above (6), which is made of phosphorus glass
(9) The liquid jet recording head substrate according to (6) above, wherein the first protective film has a thickness of 0.1 μm or more. (6) The liquid jet recording head substrate according to (6) above, wherein the protective film of (1) is silicon oxide, silicon oxynitride or phosphorous glass, and (11) the heat generating portion of the electrothermal converting element is tantalum nitride. (6) The liquid jet recording head substrate according to (6), (12) The liquid jet recording head according to (6), characterized in that the second protective film covers at least the wiring electrode. Substrate.

(13) A step of continuously forming a heating resistor layer and a wiring layer on the surface of the substrate, and heat generation by patterning the wiring layer and the heating resistor layer into desired shapes by using a photolithography method. The step of forming a portion, a first protective film is formed on the entire surface of the substrate, and the heat generating portion and the heat generating portion of the heat generating resistor layer are formed by photolithography.
A step of forming an opening having a width wider than the width of the heat generating portion only on the first protective film located immediately above the base surface of the periphery of the substrate to expose the substrate surface around the heat generating resistor layer and the heat generating portion , possess and forming a second protective film in the area immediately above the substrate whole surface, originating from the protective film thickness on the step portion of the wiring electrode
A method of manufacturing a substrate for a liquid jet recording head, characterized in that a protective film thickness on a heating portion is thin .

(14) The first protective film is made of silicon oxide, silicon oxynitride or phosphorous glass.
3) A method for manufacturing a liquid jet recording head substrate, (15) A method for manufacturing a liquid jet recording head substrate according to (13), characterized in that the heating portion of the heating resistor layer is tantalum nitride. (16) The method for manufacturing a liquid jet recording head substrate according to the above (13), wherein the etching liquid used for forming the opening in the first protective film contains hydrogen fluoride. The method for producing a substrate for a liquid jet recording head according to (13) above, wherein the etching liquid used for forming the opening in the first protective film is a buffered hydrofluoric acid aqueous solution. The protective film of (1) is made of silicon nitride, silicon oxide, silicon oxynitride or phosphorous glass.
3) A method for manufacturing a liquid jet recording head substrate, (19) The liquid jet recording head substrate according to (13), wherein the second protective film has a thickness of 0.1 μm or more. Production method.

(20) A step of forming an insulating film on the surface of the substrate, a step of continuously forming a heating resistor layer and a wiring layer on the insulating film on the surface of the substrate, the wiring layer and the wiring layer using a photolithography method. A step of forming a heating portion by patterning the heating resistor layers into desired shapes,
A first protective film is formed on the entire surface of the substrate, and the heating portion of the heating resistor layer and the periphery of the heating portion are formed by a photolithography method.
Only in front of the first protective film located directly above the side insulating film
The heat generating portion is formed with an opening having a width wider than that of the heat generating portion.
And a step of exposing the insulating film around the heat generating portion, and a step of forming a second protective film in a region immediately above the entire surface of the substrate.
Protect the heat generating part from the protective film thickness on the step of the wiring electrode.
A method for manufacturing a substrate for a liquid jet recording head, which is characterized by having a thin film thickness .

(21) The method for manufacturing a liquid jet recording head substrate according to the above (20), wherein the insulating film is made of silicon nitride, (22) the first protective film is silicon oxide, silicon oxynitride or (20) The method for manufacturing a substrate for a liquid jet recording head according to the above (20), which is made of phosphorus glass, (23) The above (20), wherein the heat generating portion of the heat generating resistor layer is tantalum nitride (24) The liquid jetting method according to the above (20), wherein the etching liquid used for forming the opening in the first protective film contains hydrogen fluoride. (25) The liquid jet recording head according to the above (20), wherein the etching liquid used for forming the opening in the first protective film is a buffered hydrofluoric acid aqueous solution. for (26) A method for manufacturing a substrate, (26) The above-mentioned (2), wherein the second protective film is silicon nitride, silicon oxide, silicon oxynitride or phosphorous glass.
0) A method for manufacturing a liquid jet recording head substrate, (27) A liquid jet recording head substrate according to the above (20), characterized in that the second protective film has a thickness of 0.1 μm or more. Production method.

(28) A step of continuously forming a heating resistor layer and a wiring layer on the surface of the substrate, and heat generation by patterning the wiring layer and the heating resistor layer into desired shapes using a photolithography method. forming a part process, the substrate whole surface first protective film and second protective film and the step of continuously formed, on the insulating film in the periphery of the heat generating portion and the heating portion of the heating resistor layer by photolithography A width wider than the width of the heat generating portion on the second protective film located at
Opening is formed possess a step of exposing the first protective film, on the heat generating portion from the protective film thickness on the step portion of the wiring electrode
A method of manufacturing a substrate for a liquid jet recording head, which is characterized in that a protective film thickness is thin .

(29) The method for manufacturing a substrate for a liquid jet recording head according to the above (28), wherein the first protective film is silicon oxide, (30) exposed from the opening of the second protective film. The method for producing a substrate for a liquid jet recording head according to (28) above, wherein the first protective film has a thickness of 0.1 μm or more, and (31) the second protective film is silicon oxide. (28) The method for manufacturing a liquid jet recording head substrate according to (28) above, which is silicon oxynitride or phosphorus glass, (32) The above-mentioned heating portion of the heating resistor layer is tantalum nitride. (28) The method for manufacturing a substrate for a liquid jet recording head according to (28), (33) The etching solution used for forming the opening in the second protective film contains hydrogen fluoride, (28) Base for liquid jet recording head described (34) The method for producing a liquid jet recording head substrate according to (28), wherein the etching liquid used for forming the opening in the second protective film is a buffered hydrofluoric acid aqueous solution. Method.

The above-mentioned configurations are intended to achieve the above-mentioned object.

[0033]

According to the present invention, it is possible to form a protective film just above the heat generating portion of the heat generating resistor and having a sufficient thickness necessary for protecting the heat generating portion while maintaining good film thickness uniformity. Therefore, thermal energy generated from the heat generating portion can be efficiently transferred to the liquid as compared with the case of using a protective film which is formed thicker than necessary in order to prevent a short circuit in the wiring layer.

Further, in addition to the protective film formed directly on the heating element, a protective film having an arbitrary thickness can be formed on a portion other than the portion directly above the heat generating portion. However, it has a great effect.

[0035]

Embodiments of the present invention will now be described in detail with reference to the drawings. The present invention is not limited to the following embodiments, and any structure may be used as long as the above-mentioned configuration can achieve the object.

(Embodiment 1) Embodiment 1 of the present invention will be described with reference to FIGS. 1 (a), 1 (b) and FIG. Figure 1
FIG. 4A is a cross-sectional view and a plan view of the vicinity of the heat generating portion of the electrothermal conversion element of the recording head substrate of the embodiment of the present invention.

In FIG. 1, reference numeral 100 denotes a liquid that is vaporized when the recording head is operated. Reference numeral 110 is a tantalum film which is a protective film on the outermost surface of the recording head substrate, 121 is a silicon nitride film which is a protective film on the heating portion 150 of the electrothermal conversion element, and 120 is a substrate surface excluding the opening 170 on the heating portion 150. A phosphorus glass film which is a protective film covering the above, 130 is an aluminum wiring film for supplying electric power to the electrothermal conversion element, 14
0 is a tantalum nitride film which is a heating resistor of the electrothermal conversion element, 160 is a silicon oxide film, 150 is a heating portion of the electrothermal conversion element, and 170 is a silicon nitride film 121 on the heating resistor 140.
And the tantalum film 110 are present only in the phosphorus glass film 120
Each of the openings is shown.

Next, a manufacturing process of the recording head substrate of this embodiment shown in FIG. 1 will be described with reference to FIG.

First, a silicon oxide film 160, which is an insulating film, is deposited to a thickness of 1 μm on the surface of a substrate (not shown) by the CVD method. Next, a tantalum nitride film 140 is deposited to a thickness of 0.1 μm by a reactive sputtering method, and an aluminum film 130 is continuously deposited to a thickness of 1.0 μm by a sputtering method (FIG. 3A). Next, the aluminum film 130 is patterned by the photolithography method to form the aluminum wiring 131, and then the tantalum nitride film 140 is patterned by the photolithography method to form the heating resistor pattern 141 (FIG. 3B).

Next, a protective film 120 made of phosphorus glass is formed to a thickness of 0.7 μm by the atmospheric pressure CVD method. The film forming conditions at this time are SiH ₄ , PH ₃ , O ₂ and N ₂ as reaction gases.
Substrate temperature is 400 ° C., phosphorus concentration is P
₂ O ₅ should be 12 wt% (Fig. 3
(C)).

Then, an opening 170 is formed in the protective film 120 located above the heating portion 150 of the heating resistor pattern 141 by photolithography (FIG. 3).
(D)). A wet etching method was used for etching the protective film 120, and a buffered hydrofluoric acid aqueous solution of 12.8 wt / vol% as NH ₄ HF ₂ was used as an etching solution.
The liquid temperature of the etching liquid was 20.0 ° C. At this time, the etching rate of the protective film 120 made of phosphorus glass is 14
Although it was 0 nm / min, the tantalum nitride film 141 was not etched under the same conditions.

At this time, an attempt was made to form a protective film 120 made of silicon oxide instead of phosphorus glass. The atmospheric pressure plasma CVD method was used for the film forming method. The film forming conditions were a mixed gas of SiH ₄ , O ₂ and N _{2 as} a reaction gas, and the substrate temperature was 400 ° C.

Then, an opening 170 was formed in the protective film 120 located above the heat generating portion 150 of the heat generating resistor pattern 141 by photolithography. Protective film 120
Wet etching method is used for etching, and the etching liquid is NH ₄ HF ₂ at 12.8 wt / vol%.
Buffered hydrofluoric acid aqueous solution was used. The etchant temperature is 2
It was 0.0 ° C. At this time, the etching rate of the protective film 120 made of silicon oxynitride was 50 nm / min, but the tantalum nitride film 141 was not etched at all under the same conditions.

Further, at this time, an attempt was made to form a protective film 120 made of silicon oxynitride instead of phosphorus glass. The plasma CVD method was used for the film forming method. The film forming conditions are as follows: SiH ₄ 250 sccm, N ₂ O as reaction gas
Gas pressure of 0.9 using mixed gas of 5000 sccm
Torr, substrate temperature 350 ° C., and RF power 3.0 KW.

Then, an opening 170 was formed in the protective film 120 located above the heat generating portion 150 of the heat generating resistor pattern 141 by photolithography. Protective film 120
Wet etching method is used for etching, and the etching liquid is NH ₄ HF ₂ at 12.8 wt / vol%.
Buffered hydrofluoric acid aqueous solution was used. The etchant temperature is 2
It was 0.0 ° C. At this time, the etching rate of the protective film 120 made of silicon oxynitride was 44 nm / min, but the tantalum nitride film 141 was not etched at all under the same conditions.

Next, a silicon nitride film 121 having a thickness of 0.3 μm is formed on the entire surface of the substrate, and then the tantalum film 110 is formed on the entire surface of the substrate.
To have a film thickness of 0.2 μm (FIG. 3E).

Next, the tantalum film 110 and the silicon nitride film 121 are partially removed by photolithography to form a bonding pad (not shown).

Through the above steps, the heating resistor pattern 14 is formed.
The protective film layers 110 and 121, which are thinner than the other portions, can be formed on the first heat generating portion 150.

At this time, the thickness of the silicon nitride film 121 is set to 0.
When the film thickness is less than 0.10 μm, the heating resistor pattern 141 is changed between 05 μm and 0.30 μm.
There were many short circuits between the tantalum film 110 and the tantalum film 110, and the non-defective rate was 20% or less, but when the film thickness was 0.15 μm or more, almost no short circuit was observed between the heating resistor pattern 141 and the tantalum film 110. The non-defective rate was 90% or more. Therefore, it is understood that the film thickness of the silicon nitride film 121 needs to be at least 0.10 μm or more, preferably 0.15 μm or more.

In this embodiment, the silicon nitride film is used as the protective film 121, but the silicon nitride film is used even when another film such as a phosphorus glass film, a silicon oxide film or a silicon oxynitride film is used. It was possible to obtain almost the same results as when using.

According to the method of this embodiment, the phosphorus glass film,
Protective film 12 made of silicon oxide film or silicon oxynitride film
Since the tantalum nitride film 141 is not etched at the time of etching 0, the protective film 120 on the tantalum nitride film 141 can be removed without impairing the performance as the heating resistor.

Further, in this embodiment, the buffer hydrofluoric acid aqueous solution is used as the etching solution for the protective film 120, but the tantalum nitride film 141 can be completely etched even when hydrofluoric acid is used as the etching solution. I was able to.

Further, since the protective film 121 having an arbitrary thickness can be formed on the surface of the opening 170 of the protective film 120, the protective film thickness required on the aluminum wiring 131 and the protective film on the heating portion 150 are required. Both the film thickness can be set.

Further, since the protective film 121 on the heat generating portion 150 is protected by the tantalum film 110 which is continuously laminated on the upper layer after being deposited, it is not damaged in the subsequent steps. Therefore, when the material used for the protective film 121 is selected, there are few restrictions on the processing characteristics, and the selection can be made in consideration of the characteristics as the protective film and the film forming characteristics.

In the present embodiment, the case where the electrothermal conversion element is formed on the substrate on which the insulating film is formed has been described. However, the driving function element for driving the electrothermal conversion element and the electrothermal conversion element on the substrate are described. A structure similar to that of the present embodiment is also applicable in the case where a wiring electrode for connecting each of the driving functional elements and an insulating film provided on the wiring electrode are formed in advance and the electrothermal conversion element is formed on the wiring electrode. It is needless to say that and the steps can be adopted.

(Embodiment 2) A second embodiment of the present invention will be described with reference to FIGS. 2 (a), 2 (b) and 4. 2A and 2B are a cross-sectional view and a plan view in the vicinity of a heat generating portion of the electrothermal conversion element of the recording head substrate of the embodiment of the present invention.

In FIG. 2, reference numeral 200 indicates a liquid that is vaporized when the recording head is operated. Reference numeral 210 is a tantalum film which is a protective film on the outermost surface of the recording head substrate, 221 is a silicon nitride film which is a protective film on the heating portion 250 of the electrothermal conversion element, and 220 is a substrate surface excluding the opening 270 on the heating portion 250. A phosphorus glass film which is a protective film covering the above, 230 is an aluminum wiring film for supplying electric power to the electrothermal conversion element, 24
Reference numeral 0 is a tantalum nitride film which is a heating resistor of the electrothermal conversion element, 260 is a silicon oxide film, 250 is a heating portion of the electrothermal conversion element, and 270 is a silicon nitride film 221 on the heating resistor 240.
And the tantalum film 210 are present only in the phosphorus glass film 220
Each of the openings is shown.

Next, the manufacturing process of the recording head substrate of this embodiment shown in FIG. 2 will be described with reference to FIG.

First, a silicon oxide film 260 as an insulating film is deposited to a thickness of 1 μm on the surface of a substrate (not shown) by the CVD method.

Next, a tantalum nitride film 240 is deposited to a film thickness of 0.1 μm by a reactive sputtering method, and an aluminum film 230 is continuously formed to a film thickness of 1.
0 μm is deposited (FIG. 4A). Next, the aluminum film 230 is patterned by photolithography to form an aluminum wiring 231, and then the tantalum nitride film 240 is patterned by photolithography again to form a heating resistor pattern 241 (FIG. 4).
(B)).

Then, a protective film 221 made of silicon nitride is formed to a thickness of 0.3 μm on the entire surface of the substrate by the plasma CVD method. The film forming conditions at this time are SiH ₄ 80 as a reaction gas.
Using a mixed gas of 0 sccm and NH ₃ 7200 sccm, gas pressure 2.0 Torr, substrate temperature 350 ° C., RF
The power was set to 3.0 kW. Next, a protective film 220 made of phosphorus glass was formed to a thickness of 0.7 μm by the atmospheric pressure CVD method.
The film forming conditions at this time are SiH ₄ , PH ₃ , and
A mixed gas of O ₂ and N ₂ was used, the substrate temperature was 400 ° C., and the phosphorus concentration was 12 wt% as P ₂ O ₅ .
(FIG.4 (c)).

Next, an opening 270 is formed wider than the heating resistor 240 in the phosphor glass film 220 located above the heating portion 250 of the heating resistor pattern 241 by photolithography (FIG. 4 (d)). A wet etching method was used for etching the phosphorus glass film, and a buffered hydrofluoric acid aqueous solution of 12.8 wt / vol% as NH ₄ HF ₂ was used as an etching solution. The temperature of the etching solution is 20.
It was 0 ° C. At this time, the etching rate of the phosphorus glass film 220 was 140 nm / min, but the etching rate of the silicon nitride film 221 was 6.1 nm / min under the same conditions.
Met.

In addition to phosphorus glass, silicon oxide and silicon oxynitride were also used as the protective film 220. At this time, in the case of silicon oxide, the atmospheric pressure plasma CVD method is used as the film forming method, and the film forming conditions are SiH ₄ , O ₂ , and N ₂ as reaction gases.
The substrate temperature was set to 400 ° C. using the mixed gas of. Further, in the case of silicon oxynitride, a plasma CVD method is used as a film forming method, and the film forming condition is SiH ₄ 250 scc as a reaction gas.
m, N ₂ O 5000 sccm mixed gas, gas pressure 0.9 Torr, substrate temperature 350 ° C., RF power 3.
It was set to 0 kW.

When silicon oxide or silicon oxynitride was used as the protective film 220, the etching rates for the buffered hydrofluoric acid aqueous solution were 50 nm / min and 44 nm / min.

Next, a tantalum film 210 having a thickness of 0.2 μm is formed on the entire surface of the substrate (FIG. 4E).

Then, the tantalum film 210 and the silicon nitride film 221 are partially removed by photolithography to form a bonding pad (not shown).

Through the above steps, the heating resistor pattern 24
The protective film layers 210 and 221 that are thinner than the other portions can be formed on the first heat generating portion 250.

According to the method of this embodiment, since the etching rate ratio between the phosphorus glass film and the silicon nitride film is as large as 23 times as described above, the underlying silicon nitride film is etched when the phosphorus glass film is etched. Since the amount can be suppressed to a small amount, the silicon nitride film thickness on the heating resistor does not largely change during the etching of the phosphorus glass film. Therefore, since the protective film layer 221 having an arbitrary thickness corresponding to the film thickness of the silicon nitride initially deposited can be left in the opening 270 of the phosphor glass film 220, the protective film film required on the aluminum wiring 231 is required. The thickness of the protective film on the heat generating portion 250 can be set independently of the thickness.

Further, when silicon oxide or silicon oxynitride is used instead of phosphorus glass, the etching rate ratios to silicon nitride are about 8 and about 7, respectively. Although the etching amount of the silicon film is large, it was possible to form a film that functions as the protective film 221.

Further, in this embodiment, the buffer hydrofluoric acid aqueous solution is used as the etching solution for the protective film 220, but the case where hydrofluoric acid is used as the etching solution is almost the same as the case where the buffer hydrofluoric acid solution is used. The result was obtained.

However, since the overetching time in the above wet etching changes depending on whether phosphorus glass, silicon oxide or silicon oxynitride is used,
The deposited film thickness of the underlying silicon nitride film needs to be determined in consideration of the over-etching amount. Specifically, the film thickness of the silicon nitride that is finally left as the protective film 221 is 0.2 μm, the film thickness of the protective film 220 is 0.8 μm, and the overetching time is 50% of the standard just etching time. Table 1 shows the deposition thickness of the silicon nitride film required for each film in each case.

[0072]

[Table 1]

At this time, the film thickness of the silicon nitride film 221 finally remaining on the tantalum nitride film 240 is set to 0.05 μm to
When the thickness was changed between 0.30 μm, the film thickness was 0.10.
If the thickness is less than μm, there are many short circuits between the heating resistor pattern 241 and the tantalum film 210, and the non-defective rate is 20% or less. However, if the film thickness is 0.15 μm or more, the heating resistor pattern 241 and the tantalum film 210. Almost no short circuit was observed between the films 210, and the yield rate was 90% or more. Therefore, it was found that the film thickness of the silicon nitride film 221 needs to be at least 0.10 μm or more, and preferably 0.15 μm or more.

Furthermore, in this embodiment, since the opening 270 is made wider than the width of the heating resistor 240, most of the heat conducted from the heating portion 250 to the upper portion reaches the liquid 200 via the thin protective film layer. Liquid 20 from heat generating part 250
The efficiency of heat transfer to zero can be further increased.

In this embodiment, the case where the electrothermal conversion element is formed on the base body on which the insulating film is formed has been described. However, the drive function element for driving the electrothermal conversion element and the electrothermal conversion element on the base body are described. A structure similar to that of the present embodiment is also applicable in the case where a wiring electrode for connecting each of the driving functional elements and an insulating film provided on the wiring electrode are formed in advance and the electrothermal conversion element is formed on the wiring electrode. It is needless to say that and the steps can be adopted.

(Embodiment 3) A third embodiment of the present invention will be described with reference to FIGS. 1 (a), 1 (c) and FIG.

FIGS. 1A and 1C are a sectional view and a plan view of the vicinity of the heat generating portion of the electrothermal converting element of the recording head substrate of the embodiment of the present invention.

In FIGS. 1A and 1C, reference numeral 100 represents a liquid that is vaporized when the recording head is operated. 1
Reference numeral 10 is a tantalum film which is a protective film on the outermost surface of the recording head substrate, 121 is a silicon nitride film which is a protective film on the heat generating portion 150 of the electrothermal converting element, and 120 is the opening 1 on the heat generating portion 150.
A phosphorus glass film which is a protective film covering the surface of the substrate except 70, 130 is an aluminum wiring film which supplies electric power to the electrothermal conversion element, 140 is a tantalum nitride film which is a heating resistor of the electrothermal conversion element, and 160 is an oxide. An insulating film made of a silicon film, 150 is a heating portion of the electrothermal conversion element, and 170 is an opening portion of the phosphorus glass film 120 where only the silicon nitride film 121 and the tantalum film 110 are present on the heating resistor 140.

Next, the manufacturing process of the recording head substrate of this embodiment shown in FIG. 1 will be described with reference to FIG.

First, plasma CV is applied to the surface of a substrate (not shown).
An insulating film 160 made of a silicon oxide film having a film thickness of 1 μm is formed by the D method.
m. The film forming conditions at this time are SiH as a reaction gas.
Using a mixed gas of ₄ 800 sccm and NH ₃ 7200 sccm, gas pressure 2.0 Torr, substrate temperature 350 ° C.,
RF power is 3.0 kW.

Next, a tantalum nitride film 140 is deposited to a film thickness of 0.1 μm by a reactive sputtering method, and an aluminum film 130 is continuously formed to a film thickness of 1.0 by a sputtering method.
μm is deposited (FIG. 3A). Next, the aluminum film 130 is patterned by the photolithography method to form the aluminum wiring 131, and then the tantalum nitride film 140 is patterned by the photolithography method to form the heating resistor pattern 141 (FIG. 3B).

Next, the phosphorus glass film 12 is formed by the atmospheric pressure CVD method.
0 is formed to a film thickness of 0.7 μm. The film forming conditions at this time are: a mixed gas of SiH ₄ , PH ₃ , O ₂ , and N _{2 as} a reaction gas, a substrate temperature of 400 ° C., and a phosphorus concentration of P ₂ O ₅ of 1
It is set to 2 wt% (FIG. 3 (c)).

Then, an opening 170 is formed in the phosphor glass film 120 located above the heat generating portion 150 of the heat generating resistor pattern 141 by photolithography (FIG. 3).
(D)). At this time, the width of the opening 170 is equal to that of the heating resistor 14.
The width is made equal to or wider than the width of 0 to expose the heating resistor 140. Wet etching is used for etching the phosphorus glass film 120, and NH 3 is used as an etchant.
_{As 4} HF ₂ , a 12.8 wt / vol% buffered hydrofluoric acid aqueous solution was used. The liquid temperature of the etching liquid was 20.0 ° C. At this time, the etching rate of the phosphorus glass film 120 is 1
Although it was 40 nm / min, the tantalum nitride film 141 was not etched at all under the same conditions.

At this time, an attempt was made to form a protective film (120) made of silicon oxide instead of phosphorus glass.
The atmospheric pressure plasma CVD method was used for the film forming method. The film forming conditions were a mixed gas of SiH ₄ , O ₂ and N _{2 as} a reaction gas, and the substrate temperature was 400 ° C.

Then, an opening 170 was formed in the protective film 120 located above the heating portion 150 of the heating resistor pattern 141 by photolithography. Protective film 120
Wet etching method is used for etching, and the etching liquid is NH ₄ HF ₂ at 12.8 wt / vol%.
Buffered hydrofluoric acid aqueous solution was used. The etchant temperature is 2
It was 0.0 ° C. At this time, the etching rate of the protective film 120 made of silicon oxynitride was 50 nm / min, but the tantalum nitride film 141 was not etched at all under the same conditions.

At this time, an attempt was made to form a protective film (120) made of silicon oxynitride instead of phosphorus glass. The plasma CVD method was used for the film forming method. The film forming conditions are as follows: SiH ₄ 250 sccm, N as reaction gas
₂ O 5000sccm mixed gas is used, gas pressure is 0.9 Torr, substrate temperature is 350 ° C., RF power is 3.0K
W.

Then, an opening 170 was formed in the protective film 120 located above the heat generating portion 150 of the heat generating resistor pattern 141 by photolithography. Protective film 120
Wet etching method is used for etching, and the etching liquid is NH ₄ HF ₂ at 12.8 wt / vol%.
Buffered hydrofluoric acid aqueous solution was used. The etchant temperature is 2
It was 0.0 ° C. At this time, the etching rate of the protective film 120 made of silicon oxynitride was 44 nm / min, but the tantalum nitride film 141 was not etched at all under the same conditions.

Further, in this embodiment, the buffer hydrofluoric acid aqueous solution is used as the etching solution for the protective film 120. However, even when hydrofluoric acid is used as the etching solution, the tantalum nitride film 141 can be completely etched. I was able to.

Next, a silicon nitride film 121 having a thickness of 0.3 μm is formed on the entire surface of the substrate, and then the tantalum film 110 is formed on the entire surface of the substrate.
To have a film thickness of 0.2 μm (FIG. 3E).

Then, the tantalum film 110 and the silicon nitride film 121 are partially removed by photolithography to form a bonding pad (not shown).

Through the above steps, the heating resistor pattern 14 is formed.
The protective film layers 110 and 121, which are thinner than the other portions, can be formed on the first heat generating portion 150.

At this time, the thickness of the silicon nitride film 121 is set to 0.
When the film thickness is less than 0.10 μm, the heating resistor pattern 141 is changed between 05 μm and 0.30 μm.
There were many short circuits between the tantalum film 110 and the tantalum film 110, and the non-defective rate was 20% or less, but when the film thickness was 0.15 μm or more, almost no short circuit was observed between the heating resistor pattern 141 and the tantalum film 110. The non-defective rate was 90% or more. Therefore, it was found that the thickness of the silicon nitride film 121 needs to be at least 0.10 μm or more, and preferably 0.15 μm or more.

In this embodiment, the silicon nitride film is used as the protective film 121, but the silicon nitride film is used even when another film such as a phosphorus glass film, a silicon oxide film or a silicon oxynitride film is used. It was possible to obtain almost the same results as when using.

According to the method of this embodiment, the phosphorus glass film,
Protective film 12 made of silicon oxide film or silicon oxynitride film
Since the tantalum nitride film 141 is not etched at the time of etching 0, the protective film 120 on the tantalum nitride film 141 can be removed without impairing the performance as the heating resistor.

Further, since the protective film 121 having an arbitrary thickness can be formed on the surface of the opening 170 of the protective film 120, the protective film thickness on the heat generating portion 150 is independent of the protective film thickness required on the aluminum wiring 131. The thickness of the protective film can be set.

Further, in this case, since the opening 170 is wider than the width of the heating resistor 140, the insulating film 160 made of silicon nitride which is the base of the heating resistor 140 is exposed. However, the etching rate of the silicon nitride film with respect to the buffered hydrofluoric acid aqueous solution is high. Is 6.1 nm
Since it is very slow as / min, even if over-etching is performed, the heat-generating resistor 1 is attached to the edge portion of the heat-generating resistor 140.
No overhang that would cause a problem in the characteristics of 40 was formed.

Further, since the protective film 121 on the heat generating portion 150 is protected by the tantalum film 110 which is continuously laminated on the upper layer after being deposited, it is not damaged in the subsequent steps. Therefore, when the material used for the protective film 121 is selected, there are few restrictions on the processing characteristics, and the selection can be made in consideration of the characteristics as the protective film and the film forming characteristics.

Further, in this embodiment, since the opening 170 is made wider than the width of the heating resistor 140, most of the heat conducted from the heating portion 150 to the upper portion reaches the liquid 100 via the thin protective film layer. Liquid 10 from heat generating part 150
The efficiency of heat transfer to zero can be further increased.

In the present embodiment, the case where the electrothermal conversion element is formed on the base body on which the insulating film is formed has been described. However, a driving functional element for driving the electrothermal conversion element and the electrothermal conversion element on the base body are described. A structure similar to that of the present embodiment is also applicable in the case where a wiring electrode for connecting each of the driving functional elements and an insulating film provided on the wiring electrode are formed in advance and the electrothermal conversion element is formed on the wiring electrode. It is needless to say that and the steps can be adopted.

[0100]

As described above, by adopting the configuration of the present invention, the heat energy generated from the heating resistor can be transmitted to the liquid in contact with the protective film layer with high efficiency, and thus the liquid jet recording head. It can greatly contribute to energy saving.

Further, by using the manufacturing method according to the present invention,
Since a thin protective film layer can be easily formed on the surface of the heating resistor of the liquid jet recording head substrate and a thick protective film layer can be easily formed on the other surfaces, the effect of preventing a short circuit of the wiring layer is great.

Further, the increase in the number of steps according to the present invention is film formation,
Only one photolithography step is required, and the increase in manufacturing cost is slight.

[Brief description of drawings]

FIG. 1 is an explanatory diagram showing a configuration near a heat generating portion of a liquid jet recording head substrate that is an embodiment of the present invention, showing a cross section and a plane.

FIG. 2 is an explanatory diagram showing a configuration in the vicinity of a heat generating portion of a liquid jet recording head substrate that is Embodiment 2 of the present invention, showing a cross section and a plane.

FIG. 3 is an explanatory diagram of a manufacturing process of a liquid jet recording head substrate that is Embodiments 1 and 3 of the present invention, and shows a cross section of each step.

FIG. 4 is an explanatory diagram of a manufacturing process of a liquid jet recording head substrate that is Embodiment 2 of the present invention, and shows a cross section of each step.

FIG. 5 is an explanatory diagram showing a configuration in the vicinity of a heat generating portion of a conventional liquid jet recording head substrate, showing a cross section and a plane.

[Explanation of symbols]

100, 200, 500 Liquid such as ink 110, 210, 510 Tantalum film 170, 270 which is a protective film on the outermost surface Opening 120, 220, 520 Protective film 121, 221 on the surface of the substrate other than the opening Protection on the heat generating part Silicon nitride films 130, 230, 530 which are films Aluminum films 140, 240, 540 for supplying electric power Tantalum nitride films 150, 250, 550 which are heat generating resistors Heat generating parts 160, 260, 560 Insulating films

Claims (34)

(57) [Claims] 1. A substrate for a liquid jet recording head, comprising a plurality of electrothermal conversion elements and a plurality of wiring electrodes respectively connected to the electrothermal conversion elements on a substrate, wherein at least the electrothermal conversion element of the substrate surface is provided. A first protective film is provided in a region directly above the heat generating portion, and a part of the heat generating portion is provided.
An opening having a width wider than that of the heat generating portion is provided.
In addition, a second protective film is formed so that the heat generating portion and the surface of the substrate around the heat generating portion are not exposed from the opening , and the protective film on the heat generating portion is more protected than the protective film on the stepped portion of the wiring electrode.
A substrate for a liquid jet recording head having a thin film thickness . 2. The substrate for a liquid jet recording head according to claim 1, wherein the first protective film is made of silicon nitride, silicon oxide, silicon oxynitride or phosphorous glass. 3. The substrate for a liquid jet recording head according to claim 1, wherein the thickness of the first protective film is 0.1 μm or more. 4. The substrate for a liquid jet recording head according to claim 1, wherein the second protective film is silicon oxide, silicon oxynitride or phosphorous glass. 5. The substrate for a liquid jet recording head according to claim 1, wherein the heat generating portion of the electrothermal converting element is tantalum nitride. 6. A recording head substrate having a plurality of electrothermal conversion elements and a plurality of wiring electrodes respectively connected to the electrothermal conversion elements, wherein an insulating film is formed on the surface of the substrate below the electrothermal conversion elements. the provided a first protective layer provided in a region immediately above the heat generating portion of the at least electric transducing element, further wherein the region immediately above the insulation <br/> Enmaku near the heat generating portion and said heating portion heating A wider opening than the width of the part
A second protective film having a portion is provided on the stepped portion of the wiring electrode.
A substrate for a liquid jet recording head, wherein the protective film thickness on the heat generating portion is smaller than the protective film thickness . 7. The substrate for a liquid jet recording head according to claim 6, wherein the insulating film is made of silicon nitride. 8. The substrate for a liquid jet recording head according to claim 6, wherein the first protective film is made of silicon nitride, silicon oxide, silicon oxynitride or phosphorous glass. 9. The substrate for a liquid jet recording head according to claim 6, wherein the thickness of the first protective film is 0.1 μm or more. 10. The second protective film is made of silicon oxide, silicon oxynitride, or phosphorous glass.
A substrate for a liquid jet recording head as described above. 11. The substrate for a liquid jet recording head according to claim 6, wherein the heat generating portion of the electrothermal converting element is tantalum nitride. 12. The liquid jet recording head substrate according to claim 6, wherein the second protective film covers at least the wiring electrode. 13. A heating portion by continuously forming a heating resistor layer and a wiring layer on a surface of a substrate, and patterning the wiring layer and the heating resistor layer into desired shapes by using a photolithography method. to form a step, forming a first protective film on a substrate the entire surface around the heat generating portion and the heating portion of the heating resistor layer by photolithography
Wherein the first protective film located directly above the substrate surface only
A step of forming an opening having a width wider than the width of the heat generating portion to expose the substrate surface around the heat generating resistor layer and the heat generating portion, and a step of forming a second protective film in a region immediately above the entire surface of the substrate. have a, on the heat generating portion from the protective film thickness on the step portion of the wiring electrode
A method for manufacturing a substrate for a liquid jet recording head, characterized in that the protective film thickness is reduced . 14. The first protective film is made of silicon oxide, silicon oxynitride or phosphorous glass.
4. A method of manufacturing a substrate for a liquid jet recording head according to item 3. 15. The method of manufacturing a substrate for a liquid jet recording head according to claim 13, wherein the heating portion of the heating resistor layer is tantalum nitride. 16. The method for manufacturing a liquid jet recording head substrate according to claim 13, wherein the etching liquid used for forming the opening in the first protective film contains hydrogen fluoride. 17. The method for manufacturing a liquid jet recording head substrate according to claim 13, wherein the etching liquid used for forming the opening in the first protective film is a buffered hydrofluoric acid aqueous solution. 18. The method for manufacturing a substrate for a liquid jet recording head according to claim 13, wherein the second protective film is silicon nitride, silicon oxide, silicon oxynitride or phosphorous glass. 19. The film thickness of the second protective film is 0.1 μm.
14. The method for manufacturing a substrate for a liquid jet recording head according to claim 13, which is the above. 20. A step of forming an insulating film on the surface of a substrate, a step of continuously forming a heating resistor layer and a wiring layer on the insulating film on the surface of the substrate, the wiring layer and the heat generation using a photolithography method. The step of forming the heat generating portion by patterning each of the resistor layers into a desired shape, the first protective film is formed on the entire surface of the substrate, and the heat generating portion of the heat generating resistor layer and the periphery of the heat generating portion are formed by photolithography . Absence
The heat is generated only in the first protective film located immediately above the edge film.
The opening is formed to have a width wider than that of the heat generating portion and the heat generating portion.
The process of exposing the insulating film around the heating part ,
In the area immediately above it possesses and forming a second protective film, distribution
The thickness of the protective film on the heating portion is smaller than that on the step of the wire electrode.
A method of manufacturing a substrate for a liquid jet recording head, which is thin . 21. The method for manufacturing a liquid jet recording head substrate according to claim 20, wherein the insulating film is made of silicon nitride. 22. The first protective film is made of silicon oxide, silicon oxynitride or phosphorous glass.
0. A method for manufacturing a substrate for a liquid jet recording head according to 0. 23. The method of manufacturing a substrate for a liquid jet recording head according to claim 20, wherein the heating portion of the heating resistor layer is tantalum nitride. 24. The method for manufacturing a liquid jet recording head substrate according to claim 20, wherein the etching liquid used for forming the opening in the first protective film contains hydrogen fluoride. 25. The method for manufacturing a liquid jet recording head substrate according to claim 20, wherein the etching liquid used for forming the opening in the first protective film is a buffered hydrofluoric acid aqueous solution. 26. The method of manufacturing a substrate for a liquid jet recording head according to claim 20, wherein the second protective film is silicon nitride, silicon oxide, silicon oxynitride or phosphorous glass. 27. The thickness of the second protective film is 0.1 μm.
21. The method of manufacturing a substrate for a liquid jet recording head according to claim 20, which is the above. 28. A step of continuously forming a heating resistor layer and a wiring layer on the surface of a substrate, and the wiring layer and the heating resistor layer are patterned into desired shapes by using a photolithography method. forming a step, a step of continuously forming a first protective film and second protective film to the substrate whole surface, on an insulating film surrounding the heating portion and the heating portion of the heating resistor layer by photolithography A step of forming an opening having a width wider than the width of the heat generating portion in the second protective film located and exposing the first protective film.
Protect the heat generating part from the protective film thickness on the step of the wiring electrode.
A method for manufacturing a substrate for a liquid jet recording head, which is characterized by having a thin film thickness . 29. The method of manufacturing a substrate for a liquid jet recording head according to claim 28, wherein the first protective film is silicon oxide. 30. The liquid jet recording head substrate according to claim 28, wherein the thickness of the first protective film exposed from the opening of the second protective film is 0.1 μm or more. Production method. 31. The second protective film is silicon oxide, silicon oxynitride or phosphorous glass.
8. A method for manufacturing a liquid jet recording head substrate according to item 8. 32. The method for manufacturing a substrate for a liquid jet recording head according to claim 28, wherein the heating portion of the heating resistor layer is tantalum nitride. 33. The method for manufacturing a liquid jet recording head substrate according to claim 28, wherein the etching liquid used for forming the opening in the second protective film contains hydrogen fluoride. 34. The method for manufacturing a liquid jet recording head substrate according to claim 28, wherein the etching liquid used for forming the opening in the second protective film is a buffered hydrofluoric acid aqueous solution.