JP3246826B2 - Semiconductor package - Google Patents

Semiconductor package

Info

Publication number
JP3246826B2
JP3246826B2 JP6049394A JP6049394A JP3246826B2 JP 3246826 B2 JP3246826 B2 JP 3246826B2 JP 6049394 A JP6049394 A JP 6049394A JP 6049394 A JP6049394 A JP 6049394A JP 3246826 B2 JP3246826 B2 JP 3246826B2
Authority
JP
Japan
Prior art keywords
substrate
semiconductor chip
circuit board
main surface
semiconductor package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP6049394A
Other languages
Japanese (ja)
Other versions
JPH07273244A (en
Inventor
秀昭 前田
博 岩崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP6049394A priority Critical patent/JP3246826B2/en
Priority to KR1019950007025A priority patent/KR100194130B1/en
Publication of JPH07273244A publication Critical patent/JPH07273244A/en
Priority to US08/655,374 priority patent/US5677575A/en
Application granted granted Critical
Publication of JP3246826B2 publication Critical patent/JP3246826B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To provide a semiconductor package which is low in cost, compact in structure, and high in reliability. CONSTITUTION:A semiconductor package is equipped with a board 6 provided with a wiring circuit 6a which includes a connector 6b formed on its primary surface, a semiconductor chip 7 mounted on the primary surface of the board 7 in a face-down manner, a resin layer 10 filled between the semiconductor chip 7 and the board 6, and a plane-type outer connection terminal 9 electrically connected to the semiconductor element 7 and, if necessary, led out and exposed on the other primary surface of the board 7 through a blind viahole connection, wherein the wiring circuit 6a which includes the connector 6b formed on the primary surface of the board 6 is formed nearly flush with the surface of the board 6.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、半導体パッケージに係
り、たとえばカード型の外部記憶媒体などに適する小型
で薄形の半導体パッケージに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor package, and more particularly to a small and thin semiconductor package suitable for a card-type external storage medium.

【0002】[0002]

【従来の技術】各種のメモリカードの構成においては、
カードの大きさや厚さなどに制約があるため、メモリ機
能などに寄与する半導体パッケージの薄形化が要求され
ると同時に、また半導体チップ大に近い、可及的なコン
パクト化が望まれる。
2. Description of the Related Art In the construction of various memory cards,
Since the size and thickness of the card are limited, it is required to reduce the thickness of the semiconductor package that contributes to the memory function and the like, and at the same time, it is desired to reduce the size of the semiconductor package as much as possible to the size of a semiconductor chip.

【0003】このような薄形実装の要求、たとえば厚み
方向に対して 1mm以下のスペースに実装する必要性に対
しては、フリップチップ実装、COB(Chip on Board)
法などが知られている。また、薄形パッケージとして
は、たとえば図3に要部構成を断面的に示すごとく、被
接続部を含む配線回路1aを一主面に備えた回路基板1
と、前記回路基板1の一主面に搭載・実装された半導体
チップ(フリップチップ)2と、スルホール3を介して
回路基板1の他主面側に導出された外部接続用端子4
と、前記半導体チップ2−回路基板1面間などの領域面
を封止する樹脂層5とを具備した構成を採ったモジュー
ルが知られている。そして、この種の薄形パッケージの
構成においては、搭載・実装する半導体チップ2の外形
寸法が、たとえば15× 5×0.25mmのとき、外形寸法が、
20×10× 0.2mmの回路基板1が選択されている。ここ
で、回路基板1としては、たとえばアルミナ,窒化アル
ミニウム、あるいはガラス・エポキシ系などを絶縁体と
したものが使用されている。なお、図3において、1bは
前記配線回路1aの被接続部面に配置された銀ペースト製
の接続パッド、2aは半導体チップ2の電極端子面に設け
られた接続用バンプである。
In order to meet such requirements for thin mounting, for example, mounting in a space of 1 mm or less in the thickness direction, flip chip mounting, COB (Chip on Board)
The law is known. As a thin package, for example, as shown in a sectional view of a main part in FIG. 3, a circuit board 1 provided with a wiring circuit 1a including a connected part on one main surface.
A semiconductor chip (flip chip) 2 mounted and mounted on one main surface of the circuit board 1, and an external connection terminal 4 led out to the other main surface side of the circuit board 1 via a through hole 3.
There is known a module having a configuration including a semiconductor layer and a resin layer 5 for sealing an area surface such as between the semiconductor chip 2 and the circuit board 1. In this type of thin package configuration, when the external dimensions of the semiconductor chip 2 to be mounted and mounted are, for example, 15 × 5 × 0.25 mm, the external dimensions are as follows.
A circuit board 1 of 20 × 10 × 0.2 mm is selected. Here, as the circuit board 1, for example, one using alumina, aluminum nitride, glass / epoxy or the like as an insulator is used. In FIG. 3, reference numeral 1b denotes a connection pad made of silver paste disposed on the surface to be connected of the wiring circuit 1a, and 2a denotes a connection bump provided on the electrode terminal surface of the semiconductor chip 2.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、前記フ
リップチップ実装およびCOB法の場合は、KGN(Kno
wn Good Die)をいかに確保するかが問題である。チップ
状態でのバーンインの開発が難しく、使用する半導体チ
ップについて、通常、予めバーンインを行い得ないの
で、信頼性上の問題がある。つまり、この種の半導体チ
ップは、チップ自体として近い将来発現するであろ欠陥
を検知するところの、いわゆるバーンインを行うことが
できない。したがって、実装・モジュール化後の実用初
期段階で、トラブルを起こす可能性を秘めていることに
なり、信頼性の点で問題があるといえる。さらに、コン
パクト化の点についてみると、COB法の場合は、フリ
ップチップ実装の場合に較べて広い実装面積を要するの
で、コンパクト化が阻害される。 また、前記片面側モ
ールドによるパッケージ化モジュールの場合は、一般的
な(通常の)封止用樹脂の塗布・充填工程において、半
導体チップ2−回路基板1面間を、封止用樹脂で緻密に
充填・封止することが困難な場合がしばしばある。すな
わち、前記回路基板1の一主面に形成・配置されている
被接続部を含む回路配線1aは、一般的に35μm 程度の厚
さがあるので、回路基板1面から35μm 程度突出した形
態を採っていることになる。そして、この種の回路基板
1−半導体チップ2面間が狭く設定されることからし
て、前記35μm 程度突出した状態の回路配線1aは、封止
用樹脂の充填・封止工程、たとえば毛細管現象などによ
って回路基板1−半導体チップ2面間に、封止用樹脂を
流入・充填する過程で、封止用樹脂のスムースな流入・
充填に支障を及ぼし易く、緻密な充填・封止を達成し得
ない恐れがある。ここで、封止用樹脂の緻密な充填を行
い難いことは、前記樹脂封止領域に気泡などが残存し易
いことを意味し、パッケージ化モジュールとして、所要
の駆動を行ったときの昇温により気泡が膨大化して、回
路基板1−半導体チップ2間の一体性など損なわれこと
になる。つまり、接続部の離脱発生などが起こり易く、
信頼性および歩留まりの点で問題がある。
However, in the case of the flip chip mounting and the COB method, the KGN (Kno
The problem is how to secure wn Good Die). It is difficult to develop burn-in in a chip state, and there is a problem in reliability because a semiconductor chip to be used cannot usually be burned in advance. In other words, this type of semiconductor chip cannot perform so-called burn-in, which is to detect a defect that will appear in the near future as the chip itself. Therefore, there is a possibility that a trouble will occur in the early stage of practical use after mounting and modularization, and it can be said that there is a problem in reliability. Further, in terms of compactness, the COB method requires a larger mounting area than flip-chip mounting, which hinders compactness. In the case of a packaged module using the one-side mold, in a general (normal) sealing resin application / filling step, the space between the semiconductor chip 2 and the circuit board 1 is densely filled with the sealing resin. It is often difficult to fill and seal. That is, since the circuit wiring 1a including the connected part formed and arranged on one main surface of the circuit board 1 generally has a thickness of about 35 μm, the circuit wiring 1a protrudes about 35 μm from the surface of the circuit board 1. It will be taken. Since the distance between the circuit board 1 and the semiconductor chip 2 is set to be narrow, the circuit wiring 1a protruding by about 35 μm is filled with a sealing resin in a sealing step, for example, by a capillary phenomenon. During the process of injecting and filling the sealing resin between the circuit board 1 and the semiconductor chip 2 surface by, for example, the smooth inflow of the sealing resin.
Filling is likely to be hindered and dense filling and sealing may not be achieved. Here, the fact that it is difficult to perform the dense filling of the sealing resin means that bubbles and the like are likely to remain in the resin sealing region, and as a packaged module, the temperature is increased when the required driving is performed. Bubbles become enormous, and the integrity between the circuit board 1 and the semiconductor chip 2 is impaired. In other words, disconnection of the connecting portion is likely to occur,
There are problems with reliability and yield.

【0005】本発明は上記事情に対処してなされたもの
で、低コスト化およびコンパクト化が可能で、かつ高信
頼性を保証し得る半導体パッケージの提供を目的とす
る。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has as its object to provide a semiconductor package which can be reduced in cost and size and can guarantee high reliability.

【0006】[0006]

【課題を解決するための手段】 本発明に係る第1の半
導体パッケージは、一主面に被接続部を含む配線回路を
備えた基板と、前記基板の一主面にフェースダウン型に
実装された半導体チップと、前記半導体チップ−基板面
間を充填する樹脂層と、前記半導体チップに電気的に接
続し、かつ基板の他主面側に導出・露出された平面型の
外部接続用端子とを具備して成る半導体パッケージであ
って、前記基板の一主面の被接続部を含む配線回路が
記基板に埋め込まれて、前記配線回路の上面と基板面が
ほぼ同一平面を成して形成されていることを特徴とす
る。また、本発明に係る第2の半導体パッケージは、一
主面に被接続部を含む配線回路を備えた基板と、前記基
板の一主面にフェースダウン型に実装された半導体チッ
プと、前記半導体チップ−基板面間を充填する樹脂層
と、前記半導体チップに電気的に接続し、かつブライン
ドビアホール接続で基板の他主面側に導出・露出された
平面型の外部接続用端子とを具備して成る半導体パッケ
ージであって、前記基板の一主面の被接続部を含む配線
回路が前記基板に埋め込まれて、前記配線回路の上面と
基板面がほぼ同一平面を成して形成されていることを特
徴とする。
Means for Solving the Problems A first semiconductor package according to the present invention is provided with a substrate provided with a wiring circuit including a portion to be connected on one main surface, and a face-down type mounted on one main surface of the substrate. A semiconductor chip, a resin layer filling the space between the semiconductor chip and the substrate surface, and a planar external connection terminal electrically connected to the semiconductor chip and led out and exposed to the other main surface side of the substrate. a semiconductor package comprising comprises a wiring circuit including a connected part of one main surface of the substrate prior to
Being embedded in the substrate, the upper surface of the wiring circuit and the substrate surface are formed substantially in the same plane. In addition, a second semiconductor package according to the present invention includes a substrate having a wiring circuit including a connected portion on one main surface, a semiconductor chip mounted face-down on one main surface of the substrate, chip - a resin layer filling between the substrate surface, said semiconductor chip electrically connected, and the external connection Brine <br/> de-via-hole connection with derived-exposed on the other main surface of the substrate the flat A wiring circuit including a connected part on one main surface of the substrate, wherein the wiring circuit is embedded in the substrate, and a top surface of the wiring circuit is provided.
The present invention is characterized in that the substrate surfaces are formed substantially in the same plane.

【0007】本発明は、 (a)一主面に被接続部を含む配
線回路を、ほぼ同一平面を成すように配置(設置)した
形態を採る樹脂系基板もしくはセラミック系基板を回路
基板とすること、 (b)この回路基板の一主面(片面)
に、半導体チップを実装した構成を採ったこと、 (c)緻
密な封止樹脂層を半導体チップ−回路基板面に形成・具
備させて、半導体パッケージのコンパクト化、薄型化を
図りながら、信頼性などの向上を図ったことを骨子とし
ている。
The present invention provides: (a) a resin-based substrate or a ceramic-based substrate in which a wiring circuit including a portion to be connected on one main surface is arranged (installed) so as to form substantially the same plane as a circuit substrate. (B) One main surface (one side) of this circuit board
(C) A compact encapsulation resin layer is formed and provided on the semiconductor chip-circuit board surface to reduce the size and thickness of the semiconductor package while maintaining reliability. The main point is to improve such things.

【0008】本発明において、半導体チップを搭載・実
装する回路基板面の被接続部を含む配線回路は、回路基
板面と同一平面を成すよう埋め込み型に設置されるが、
その平坦性(平面性)は厳密なものでなく、一般的に、
配線回路の厚さが35μm 程度の場合、±10μm の範囲で
許容される。そして、このような回路基板は、使用する
絶縁素材がセラミック系のときはグリーンシート法で、
また樹脂系のときはプリプレグを用いる方法などで作成
し得る。
In the present invention, a wiring circuit including a connected portion on a circuit board surface on which a semiconductor chip is mounted and mounted is buried so as to be flush with the circuit board surface.
Its flatness (flatness) is not strict, and in general,
When the thickness of the wiring circuit is about 35 μm, the allowable range is ± 10 μm. And such a circuit board is a green sheet method when the insulating material used is ceramic,
In the case of resin, it can be prepared by a method using a prepreg.

【0009】また、前記回路基板の構成において、要す
れば、回路基板の一主面に形成された被接続部を含む配
線回路、および/もしくは回路基板に内層配置された配
線回路とは別個に、それらの配線回路を囲繞する形で、
電気的に絶縁離隔させて外周端縁部の非回路形成領域
に、たとえば 0.1〜 2mm程度幅のダミー配線パターンを
設置しておいてもよい。つまり、ダミー配線パターンを
設置しておくと、回路基板の反り発生などが抑制・防止
されるとともに、ノイズ対策なども図ることができるか
らである。なお、このダミー配線パターンの設置位置
は、外周端面から 2mm程度を超えない領域、つまり可及
的に外周端縁面に隣接させることが好ましい。
Further, in the configuration of the circuit board, if necessary, a wiring circuit including a connected portion formed on one main surface of the circuit board and / or a wiring circuit arranged in an inner layer on the circuit board may be separately provided. , Around those wiring circuits,
A dummy wiring pattern having a width of, for example, about 0.1 to 2 mm may be provided in the non-circuit formation region at the outer peripheral edge portion while being electrically insulated and separated. That is, if the dummy wiring pattern is provided, the occurrence of warpage of the circuit board can be suppressed and prevented, and noise countermeasures can be taken. It is preferable that the installation position of the dummy wiring pattern is not more than about 2 mm from the outer peripheral end face, that is, as close as possible to the outer peripheral end face.

【0010】さらに、回路基板裏面側に導出・露出させ
た平面型の外部接続用端子の配列は、特に限定されるも
のでないが、定ピッチの格子状とした場合、この種半導
体パッケージを標準化することが可能になるし、また前
記外部接続用端子の一部、たとえば外部接続用端子の配
設が偏っている場合など、コーナー部にダミー接続用端
子を設置しておくことにより、半導体パッケージの平面
的な装着など行い易くなる。
Furthermore, the arrangement of the planar external connection terminals led out and exposed to the back side of the circuit board is not particularly limited, but when a regular pitch lattice is used, this type of semiconductor package is standardized. It is also possible to provide a dummy connection terminal at a corner portion of a part of the external connection terminal, for example, when the arrangement of the external connection terminal is biased. It becomes easier to perform flat mounting.

【0011】[0011]

【作用】本発明に係る第1の半導体パッケージは、半導
体チップ搭載・実装した回路基板面は、被接続部を含む
配線回路が埋め込まれ、平坦性を保持しているので、こ
の領域を充填・封止する封止用樹脂層の緻密性も確実に
確保されている。つまり、半導体チップ−回路基板面間
が、平坦で樹脂も容易に流入するので、ボイドのない緻
密な封止層を形成・保持するため、信頼性の高い接合を
形成する。
In the first semiconductor package according to the present invention, the circuit board surface on which the semiconductor chip is mounted and mounted is filled with a wiring circuit including a connected portion and maintains flatness. The denseness of the sealing resin layer to be sealed is reliably ensured. In other words, since the gap between the semiconductor chip and the circuit board surface is flat and the resin easily flows, a highly reliable bonding is formed in order to form and hold a dense sealing layer without voids.

【0012】さらに、本発明に係る第2の半導体パッケ
ージは、前記第1の半導体パッケージの構成において、
基板の他主面側にブラインドビアホール接続で、平面型
の外部接続用端子を導出・露出させたことにより、スル
ーホール接続で導出・露出させた場合に比べて、充填・
封止する封止用樹脂が裏面側に流出するのも防止され、
より容易に封止用樹脂層の緻密性が確保されるととも
に、半導体パッケージの薄形性および美観の確保も可能
となる。
Further, in the second semiconductor package according to the present invention, in the configuration of the first semiconductor package,
Bra India via holes connected to the other main surface of the substrate, by which is derived, exposing the external connection terminals of the flat, as compared with the case where is derived, exposed through hole connection, filling and
The sealing resin for sealing is also prevented from flowing out to the back side,
The denseness of the sealing resin layer can be more easily ensured, and the thinness and appearance of the semiconductor package can be ensured.

【0013】[0013]

【実施例】以下図1および図2を参照して本発明の実施
例を説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS.

【0014】図1は、本発明に係る半導体パッケージの
要部構成例を示す断面図であり、6は一主面に被接続部
を含む配線回路6aを備えた長さ20mm,幅10mm,厚さ 0.2
mmの回路基板、7は前記回路基板6の一主面に搭載・実
装された長さ15mm,幅 5mm,厚さ0.25mmの半導体チップ
(ICチップなど)である。ここで、前記回路基板6の
一主面に形成されている配線回路6aは回路基板6の一主
面と同一平面を成すように埋め込み型に配置されてお
り、また搭載・実装する半導体チップ7の電極端子上に
配置された接続用バンプ7aを接続する領域には銀ペース
トから成る被接続部(接続パッド)6bが設けてある。さ
らに、前記回路基板6においては、その一主面上の配線
回路6aに電気的に接続するスルホール8を介して、裏面
側(他主面)に平面型の外部接続用端子9が、他主面と
同一平面を成すように埋め込み型に導出・露出されてい
る。なお、前記回路基板6としては、たとえばアルミナ
系回路基板,窒化アルミニウム系回路基板,ガラス・エ
ポキシ樹脂系回路基板,BTレジン系回路基板などが、
一般的に使用される。また、この回路基板6において
は、反りの発生防止やノイズ対策として、回路基板6主
面の外周端縁部に(好ましくは外周端面からほぼ 2mm以
内の外周端縁部に)ベタ型パターンなどのダミー配線パ
ターン(図示せず)を設置しておいてもよい。さらにま
た、10は前記回路基板6の一主面に、搭載・実装した半
導体チップ7と回路基板6面とが成す隙間を充填・封止
する樹脂層である。
FIG. 1 is a cross-sectional view showing an example of a configuration of a main part of a semiconductor package according to the present invention. Numeral 6 denotes a 20 mm long, 10 mm wide and 10 mm thick wiring circuit 6a including a connected part on one main surface. 0.2
A circuit board 7 of mm is a semiconductor chip (such as an IC chip) having a length of 15 mm, a width of 5 mm, and a thickness of 0.25 mm mounted and mounted on one main surface of the circuit board 6. Here, the wiring circuit 6a formed on one main surface of the circuit board 6 is buried so as to form the same plane as the one main surface of the circuit board 6, and the semiconductor chip 7 to be mounted and mounted is provided. A connected portion (connection pad) 6b made of silver paste is provided in a region where the connection bump 7a arranged on the electrode terminal is connected. Further, in the circuit board 6, a flat external connection terminal 9 is provided on the back surface (other main surface) through a through hole 8 electrically connected to the wiring circuit 6a on one main surface thereof. It is led out and exposed so as to be flush with the surface. Examples of the circuit board 6 include an alumina-based circuit board, an aluminum nitride-based circuit board, a glass / epoxy resin-based circuit board, and a BT resin-based circuit board.
Commonly used. Further, in the circuit board 6, a solid pattern such as a solid pattern is provided on the outer peripheral edge of the main surface of the circuit board 6 (preferably on the outer peripheral edge within about 2 mm from the outer peripheral end face) as a measure for preventing warpage and noise. A dummy wiring pattern (not shown) may be provided. Further, reference numeral 10 denotes a resin layer which fills and seals a gap formed between the semiconductor chip 7 mounted and mounted on one main surface of the circuit board 6 and the surface of the circuit board 6.

【0015】次に、上記構成の半導体パッケージの製造
例を説明する。
Next, an example of manufacturing the semiconductor package having the above configuration will be described.

【0016】先ず、片面に(一主面に)フリップチップ
実装用の被接続部を含む回路配線5a、および要すればベ
タ型のダミーの配線パターンを有し、かつ被接続部を含
む回路配線6aに接続し、かつスルホール8を介して裏面
(他主面)に平面型の外部接続用端子9を、たとえば格
子状配列に導出した構成のアルミナ系回路基板6を用意
する。ここで、アルミナ系回路基板6は、いわゆるグリ
ーンシート手法で作成されたものであり、被接続部を含
む回路配線6aおよび平面型の外部接続用端子9は、それ
ぞれアルミナ系回路基板6面とほぼ同一平坦面を成すよ
うに埋め込まれた形態を採っている。また、このアルミ
ナ系回路基板6は、長さ20mm,幅10mm,厚さ 0.2mmで、
長さ15mm,幅 5mm,厚さ0.25mmの半導体チップ7をフェ
ースダウン型に搭載・実装するものである。
First, a circuit wiring 5a including a connected portion for flip-chip mounting on one surface (on one main surface) and, if necessary, a circuit wiring having a solid dummy wiring pattern and including a connected portion An alumina-based circuit board 6 is provided which is connected to 6a and has a flat external connection terminal 9 led out in a lattice-like arrangement on the back surface (other main surface) via a through hole 8. Here, the alumina-based circuit board 6 is formed by a so-called green sheet method, and the circuit wiring 6a including the connected portion and the planar type external connection terminal 9 are substantially the same as the surface of the alumina-based circuit board 6 respectively. It takes a form embedded so as to form the same flat surface. The alumina-based circuit board 6 has a length of 20 mm, a width of 10 mm, and a thickness of 0.2 mm.
The semiconductor chip 7 having a length of 15 mm, a width of 5 mm and a thickness of 0.25 mm is mounted and mounted face-down type.

【0017】次いで、前記アルミナ系回路基板6を、た
とえば真空吸着機構付きのスクリーン印刷機のステージ
上に固定し、前記半導体チップ7の電極(接続用)パッ
ド7aに対応するアルミナ系基板6上の被接続部に接続パ
ッド6bを形成する。すなわち、半導体チップ7の電極パ
ッド(たとえば, 100× 100μm)7aに対応する開口(た
とえば, 150× 150μm)を有するメタルマスクを用い
て、アルミナ系回路基板6の一主面に、銀ペースト(た
とえば銀の粒径 1μm ,粘度1000ps)をスクリーン印刷
し、被接続部面上に直径 150μm ,高さ約80μm の接続
パッド6bを形成する。 一方、電極端子面上に、電気メ
ッキによって接続用の金バンプ7a、あるいはボールボン
ディング法によって金のボールバンプ(たとえば,高さ
30μm , 100× 100μm)7aを形成した半導体チップ7を
用意する。
Next, the alumina-based circuit board 6 is fixed on, for example, a stage of a screen printing machine having a vacuum suction mechanism, and the alumina-based circuit board 6 on the alumina-based board 6 corresponding to the electrode (connection) pad 7a of the semiconductor chip 7 is mounted. The connection pad 6b is formed on the connected portion. That is, using a metal mask having an opening (for example, 150 × 150 μm) corresponding to the electrode pad (for example, 100 × 100 μm) 7 a of the semiconductor chip 7, a silver paste (for example, A silver particle diameter of 1 μm and a viscosity of 1000 ps) are screen-printed to form a connection pad 6b having a diameter of 150 μm and a height of about 80 μm on the surface of the portion to be connected. On the other hand, on the electrode terminal surface, a gold bump 7a for connection by electroplating or a gold ball bump (for example, height
A semiconductor chip 7 having 30 μm, 100 × 100 μm) 7a is prepared.

【0018】その後、前記アルミナ系基板6の一主面
で、前記半導体チップ7を互いに対応する接続パッド6
b、および接続用の金バンプ7aを位置合わせ,配置し、
被接続部同士を加圧することにより、接続パッド6bに接
続バンプ7aの少なくとも先端部を埋め込む形に圧入して
固定接続し、半導体パッケージを組み立てる。この状態
で、前記接続パッド6bを成す銀ペーストを熱硬化させる
ことによって、いわゆるフリップチップボンディングす
る。
Thereafter, the semiconductor chip 7 is connected to the corresponding connection pads 6 on one main surface of the alumina-based substrate 6.
b, and the gold bump 7a for connection are aligned and arranged,
By pressurizing the connected portions, the connection pads 6b are press-fitted so as to embed at least the distal ends of the connection bumps 7a and are fixedly connected to assemble the semiconductor package. In this state, so-called flip-chip bonding is performed by thermosetting the silver paste forming the connection pad 6b.

【0019】次いで、封止樹脂による処理を行う。すな
わち、前記アルミナ系回路基板6の周辺部の露出領域面
の一端側に、封止用樹脂(たとえば粘度の低いエポキシ
樹脂)を滴下してから60〜80℃程度に加温し、半導体チ
ップ7下面とアルミナ系回路基板6上面との間隙部に、
その間隙部の一端側から毛細管現象を利用して封止用樹
脂を流し込み,充填する。この樹脂処理においては、前
記間隙部に対する十分な樹脂9の充填とともに、半導体
チップ7の側面部に一部が回り込む形にすることが好ま
しい。このようにして、所要の樹脂処理を行った後、前
記充填させた樹脂を熱などで硬化(固化)させることに
より、前記図1に断面的に示すごとき構成を採った半導
体パッケージが得られる。
Next, a treatment with a sealing resin is performed. That is, a sealing resin (for example, a low-viscosity epoxy resin) is dropped onto one end of the exposed area surface of the peripheral portion of the alumina-based circuit board 6 and then heated to about 60 to 80 ° C. In the gap between the lower surface and the upper surface of the alumina-based circuit board 6,
The sealing resin is poured and filled from one end of the gap by utilizing the capillary phenomenon. In this resin treatment, it is preferable that a sufficient amount of the resin 9 is filled in the gap and a part of the gap goes around the side surface of the semiconductor chip 7. After the required resin treatment is performed in this manner, the filled resin is cured (solidified) by heat or the like, whereby a semiconductor package having a configuration as shown in a cross section in FIG. 1 is obtained.

【0020】ここで、半導体パッケージの半導体チップ
7は、前記充填した樹脂層10によって、アルミナ系回路
基板6面に対する固定化などが、さらに良好になされる
ばかりでなく、半導体チップ7のアルミナ系回路基板6
面に対する絶縁保護なども図られる。一方、半導体チッ
プ7は、その上面が露出しているが、半導体チップ7の
露出面は素材であるシリコンが緻密で堅牢なため、表面
保護され、かかる点による信頼性などは問題にならない
ことも確認された。
Here, the semiconductor chip 7 of the semiconductor package is not only better fixed to the surface of the alumina-based circuit board 6 by the filled resin layer 10, but also the alumina-based circuit of the semiconductor chip 7 is improved. Substrate 6
Insulation protection for the surface is also achieved. On the other hand, although the upper surface of the semiconductor chip 7 is exposed, the exposed surface of the semiconductor chip 7 is protected because the material silicon is dense and robust, so that the reliability is not a problem. confirmed.

【0021】また、前記半導体チップ7周辺部は確実、
かつ緻密に樹脂封止されているため、アルミナ系基板6
に対して強固な接合も確保され、信頼性の高い半導体パ
ッケージとして機能するものであった。さらに、この半
導体パッケージは、回路基板6の一主面の外周端縁部に
ベタ型パターンを形成・配置した場合は、その補強的な
作用によって、高々 0.3mm程度の薄板型でありながら、
割れの発生や反りの発生などが効果的に抑制されてお
り、歩留まりよく得られるとともに、取扱い作業なども
簡便であった。しかも、この半導体パッケージをメモリ
ーカードの機能部として使用したところ、ノイズ対策も
良好であることも確認された。
The periphery of the semiconductor chip 7 is surely
And densely resin-sealed, the alumina-based substrate 6
Thus, a strong bond was secured, and the device functioned as a highly reliable semiconductor package. Furthermore, when a solid pattern is formed and arranged on the outer peripheral edge of one main surface of the circuit board 6, this semiconductor package is thin and has a thickness of at most about 0.3 mm due to its reinforcing effect.
The generation of cracks and the generation of warpage were effectively suppressed, and a good yield was obtained, and the handling operation was simple. Moreover, when this semiconductor package was used as a functional part of a memory card, it was also confirmed that noise suppression was good.

【0022】なお、上記では、回路基板6として、外形
が長方形のアルミナ系基板を用いた構成例を説明した
が、方形であってもよい。
In the above description, a configuration example using an alumina-based substrate having a rectangular external shape as the circuit substrate 6 has been described, but a rectangular shape may be used.

【0023】実施例2 図2に主要部の構成を断面的に示す回路基板6′を用意
した。すなわち、一主面に、フリップチップ実装用の被
接続部面に銀ペースト系の接続パッド6bを設けた回路配
線6aを有し、かつ前記回路配線6aとの間をブラインドビ
アホール8′を介して裏面(他主面)に、平面型の外部
接続用端子9が、格子状配列に導出・配置されたアルミ
ナ系回路基板(もしくは窒化アルミ系回路基板)6′を
用意した。なお、この回路基板6′においても、被接続
部を含む回路配線6aおよび平面型の外部接続用端子9
は、回路基板6′面とほぼ同一の平坦面を成すように埋
め込まれた形態を採っている。一方、電極パッド面に電
気めっき法(もしくはボールボンディング法)で、電極
端子面に接続用の金バンプ(高さ30μm ,大きさ 100×
100μm )7aを設けた半導体チップ(フリップチップ)
7を用意した。なお、前記アルミナ系基板6′は、長さ
20mm,幅10mm,厚さ 0.2mmの外形を成し、フリップチッ
プ(半導体チップ)7は、長さ15mm,幅 5mm,厚さ0.25
mmの外形であり、このフリップチップはフェースダウン
型に搭載・実装される。
Embodiment 2 A circuit board 6 'is shown in FIG. That is, one main surface has a circuit wiring 6a provided with a silver paste connection pad 6b on a surface to be connected for flip-chip mounting, and a space between the circuit wiring 6a and the circuit wiring 6a via a blind via hole 8 '. An alumina-based circuit board (or aluminum nitride-based circuit board) 6 ′ in which planar external connection terminals 9 are led out and arranged in a grid-like arrangement on the back surface (other main surface) was prepared. In this circuit board 6 ', the circuit wiring 6a including the connected portion and the planar external connection terminal 9 are also provided.
Is embedded so as to form a flat surface substantially the same as the surface of the circuit board 6 '. On the other hand, gold bumps for connection (30 μm in height, 100 ×
100μm) Semiconductor chip with 7a (flip chip)
7 was prepared. The alumina-based substrate 6 'has a length
Flip chip (semiconductor chip) 7 has a length of 15 mm, a width of 5 mm, and a thickness of 0.25 mm.
The flip chip is mounted and mounted face-down type.

【0024】次いで、前記アルミナ系回路基板6′およ
びフリップチップ7を、フリップチップボンダーのステ
ージ面上にて位置決め,配置した。つまり、アルミナ系
回路基板6′を真空吸着させてから、アルミナ系回路基
板6′の金製の接続パッド6bに、フリップチップ7の電
極端子面に形成したで金バンプ7aを位置合わせ・配置し
た後、接続パッド6bおよび金バンプ7aの両被接続部を密
着させるため、フリップチップ7の上から荷重(加圧)
を加えた状態のまま、 100〜 150℃程度に30〜120分間
加熱維持して、前記接続パッド6bおよび金バンプ7aを相
互の拡散によって接合・一体化させた。その後、アルミ
ナ系回路基板6′とフリップチップ7との間に、前記実
施例1の場合と同様の条件で封止樹脂10を充填処理し
た。前記樹脂の充填処理においては、温度を適宜上げる
と毛細管現象が促進されて、より容易に樹脂の充填処理
を行い得る。こうして、所要の樹脂充填処理を行った
後、加熱処理を施して、前記充填樹脂を硬化させること
により、アルミナ系回路基板6′面にフリップチップ7
が固定・保持された半導体パッケージを製造した。
Next, the alumina-based circuit board 6 'and the flip chip 7 were positioned and arranged on the stage surface of the flip chip bonder. That is, after the alumina-based circuit board 6 'was vacuum-adsorbed, the gold bumps 7a were aligned and arranged on the gold connection pads 6b of the alumina-based circuit board 6' on the electrode terminal surfaces of the flip chip 7. Then, a load (pressurization) is applied from above the flip chip 7 in order to bring the both connected portions of the connection pad 6b and the gold bump 7a into close contact.
The connection pads 6b and the gold bumps 7a were joined and integrated by mutual diffusion while maintaining the temperature of about 100 to 150 ° C. for about 30 to 120 minutes while adding. Thereafter, the sealing resin 10 was filled between the alumina-based circuit board 6 'and the flip chip 7 under the same conditions as in the first embodiment. In the resin filling process, when the temperature is appropriately increased, the capillary phenomenon is promoted, and the resin filling process can be performed more easily. After the required resin filling process is performed, a heating process is performed to cure the filled resin, so that the flip chip 7
Was manufactured with the semiconductor package fixed and held.

【0025】なお、上記構成において、回路基板6′の
裏面側に導出,配置された平板型の外部接続端子9は、
ランダムであってもよいが、定ピッチの格子状配列が標
準化などの点で好ましく、また、外郭側の余裕を比較的
大きく採った構成などの場合、所要の平板型の外部接続
端子9の外に、各コーナー部にダミーの外部接続用端子
を配設した構成を採ってもよい。
In the above configuration, the flat external connection terminals 9 led out and arranged on the back side of the circuit board 6 'are:
Although it may be random, a grid-like arrangement with a constant pitch is preferable in terms of standardization and the like. In the case of a configuration in which the margin on the outer side is relatively large, the outside of the required flat external connection terminal 9 is required. Alternatively, a configuration in which dummy external connection terminals are provided at each corner may be adopted.

【0026】[0026]

【発明の効果】 上記説明から分かるように、本発明に
係る半導体パッケージは、半導体チップ搭載・実装した
回路基板面が、被接続部を含む配線回路が埋め込み、平
坦性を保持しているので、この領域を充填・封止する封
止用樹脂層の緻密性も確実に確保されている。すなわ
ち、半導体チップ−回路基板面間が、平坦で樹脂も容易
に流入するので、ボイドのない緻密な封止層を形成・保
持し易くなるため、信頼性の高い封止・接合が形成され
る。さらに、基板の他主面側にブラインドホール接続
で、平面型の外部接続用端子を導出・露出させた場合に
は、スルーホール接続で導出・露出させた場合に比べ
て、充填・封止する封止用樹脂が裏面側に流出するのも
容易に防止されるので、より容易に封止用樹脂層の緻密
性が確保されるとともに、半導体パッケージの薄形性お
よび美観の確保も可能となる。さらに、言及すると、本
発明の半導体パッケージは、前記項信頼性や薄形性、さ
らに着脱可能性などの特長を有するので、たとえばメモ
リーカード用などに好適するものといえる。
As can be understood from the above description, in the semiconductor package according to the present invention, the circuit board surface on which the semiconductor chip is mounted / mounted is embedded with the wiring circuit including the connected portion, and the flatness is maintained. The denseness of the sealing resin layer that fills and seals this region is also ensured. That is, since the resin is easily flowed between the semiconductor chip and the circuit board surface, and is flat, the dense sealing layer without voids is easily formed and held, so that highly reliable sealing and bonding is formed. . Furthermore, in Brine Dohoru connected to the other main surface of the substrate, when was derived, exposing the external connection terminal of the planar type, as compared with the case where is derived, exposed through hole connection, filling and sealing It is also possible to easily prevent the encapsulating resin from flowing out to the back side, so that the denseness of the encapsulating resin layer can be more easily secured, and the thinness and aesthetic appearance of the semiconductor package can be ensured. Become. Furthermore, to be mentioned, the semiconductor package of the present invention has features such as the above-described reliability, thinness, and detachability, and can be said to be suitable for, for example, a memory card.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る半導体パッケージの要部構成例を
示す断面図。
FIG. 1 is a sectional view showing an example of a configuration of a main part of a semiconductor package according to the present invention.

【図2】本発明に係る半導体パッケージの他の要部構成
例を示す断面図。
FIG. 2 is a sectional view showing another example of the configuration of the main part of the semiconductor package according to the present invention.

【図3】本発明外の半導体パッケージの要部構成例を示
す断面図。
FIG. 3 is a sectional view showing an example of a configuration of a main part of a semiconductor package outside the present invention.

【符号の説明】[Explanation of symbols]

1,6,6′…回路基板 1a,6a…配線回路 1b,
6b…接続パッド(被接続部) 2,7…半導体チップ
2a,7a…接続バンプ 3,8…スルホール
4,9…平面型の外部接続用端子 5,10…封止樹脂
層 7′…ブラインドビアホール
1,6,6 '... circuit board 1a, 6a ... wiring circuit 1b,
6b: Connection pad (connected part) 2, 7: Semiconductor chip
2a, 7a: Connection bump 3, 8: Through hole
4, 9 ... flat type external connection terminal 5, 10 ... sealing resin layer 7 '... blind via hole

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H01L 23/12 H01L 21/60 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 23/12 H01L 21/60

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 一主面に被接続部を含む配線回路を備え
た基板と、 前記基板の一主面にフェースダウン型に実装された半導
体チップと、 前記半導体チップ−基板面間を充填する樹脂層と、 前記半導体チップに電気的に接続し、かつ基板の他主面
側に導出・露出された平面型の外部接続用端子とを具備
して成る半導体パッケージであって、 前記基板の一主面の被接続部を含む配線回路が前記基板
に埋め込まれて、前記配線回路の上面と基板面がほぼ同
一平面を成して形成されていることを特徴とする半導体
パッケージ。
A substrate provided with a wiring circuit including a portion to be connected on one main surface; a semiconductor chip mounted face-down on one main surface of the substrate; and a space between the semiconductor chip and the substrate surface. A semiconductor package comprising: a resin layer; and a planar external connection terminal electrically connected to the semiconductor chip and led out and exposed to the other main surface of the substrate. the substrate wiring circuit including a connected part of the main surface
Wherein the upper surface of the wiring circuit and the substrate surface are substantially flush with each other.
【請求項2】 一主面に被接続部を含む配線回路を備え
た基板と、 前記基板の一主面にフェースダウン型に実装された半導
体チップと、 前記半導体チップ−基板面間を充填する樹脂層と、 前記半導体チップに電気的に接続し、かつブラインドビ
アホール接続で基板の他主面側に導出・露出された平面
型の外部接続用端子とを具備して成る半導体パッケージ
であって、 前記基板の一主面の被接続部を含む配線回路が前記基板
に埋め込まれて、前記配線回路の上面と基板面がほぼ同
一平面を成して形成されていることを特徴とする半導体
パッケージ。
2. A substrate provided with a wiring circuit including a portion to be connected on one principal surface; a semiconductor chip mounted face-down on one principal surface of the substrate; and a space between the semiconductor chip and the substrate surface. and a resin layer, wherein the semiconductor chip are electrically connected, and a semiconductor package formed by and a external connection terminal bra India via-hole connection flat derived-exposed on the other main surface side of the substrate The wiring circuit including the connected portion on one main surface of the substrate is
Wherein the upper surface of the wiring circuit and the substrate surface are substantially flush with each other.
【請求項3】 請求項1もしくは2の記載において、被
接続部を含む配線回路の基板面に対するほぼ同一平面を
成す平面性が±10μmの範囲にあることを特徴とする
半導体パッケージ。
3. The semiconductor package according to claim 1, wherein the planarity of the wiring circuit including the connected portion, which is substantially flush with the substrate surface , is in a range of ± 10 μm.
JP6049394A 1994-03-30 1994-03-30 Semiconductor package Expired - Fee Related JP3246826B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP6049394A JP3246826B2 (en) 1994-03-30 1994-03-30 Semiconductor package
KR1019950007025A KR100194130B1 (en) 1994-03-30 1995-03-30 Semiconductor package
US08/655,374 US5677575A (en) 1994-03-30 1996-05-30 Semiconductor package having semiconductor chip mounted on board in face-down relation

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JP6049394A JP3246826B2 (en) 1994-03-30 1994-03-30 Semiconductor package

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JPH07273244A JPH07273244A (en) 1995-10-20
JP3246826B2 true JP3246826B2 (en) 2002-01-15

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5677246A (en) * 1994-11-29 1997-10-14 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor devices
JP2940475B2 (en) * 1996-06-24 1999-08-25 日本電気株式会社 IC package, IC prober, and method of manufacturing the same
JP2006216720A (en) 2005-02-02 2006-08-17 Sharp Corp Semiconductor device and its manufacturing method
JP6149932B2 (en) * 2013-07-31 2017-06-21 富士電機株式会社 Semiconductor device
JP6163246B1 (en) * 2016-12-06 2017-07-12 西村陶業株式会社 Manufacturing method of ceramic substrate

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