JP3243915B2 - Method for interfacial oxidation of CVD oxide film - Google Patents
Method for interfacial oxidation of CVD oxide filmInfo
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- JP3243915B2 JP3243915B2 JP35095393A JP35095393A JP3243915B2 JP 3243915 B2 JP3243915 B2 JP 3243915B2 JP 35095393 A JP35095393 A JP 35095393A JP 35095393 A JP35095393 A JP 35095393A JP 3243915 B2 JP3243915 B2 JP 3243915B2
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- oxide film
- oxidation
- gas
- nitrogen
- cvd
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置に用いるＣ
ＶＤ酸化膜の界面酸化方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention
The present invention relates to a method for interfacial oxidation of a VD oxide film.
【０００２】[0002]
【従来の技術】半導体装置の製造プロセスにおいて、Ｃ
ＶＤ法によって酸化膜を形成した後、乾燥酸素（Ｏ2 ）
雰囲気中での熱酸化によって上記酸化膜の界面近傍を再
酸化していた。2. Description of the Related Art In a semiconductor device manufacturing process, C
After forming an oxide film by the VD method, dry oxygen (O 2 )
The vicinity of the interface of the oxide film was reoxidized by thermal oxidation in an atmosphere.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記方
法では、界面準位を低減することはできるが、酸化膜中
のトラップを低減する効果は小さい。上記トラップは当
該酸化膜中に含まれる水素に起因している。このため、
酸素ガス雰囲気中では水素の離脱効果が小さいので、ト
ラップを低減する効果は小さくなる。特に、リンを不純
物として導入した多結晶シリコン上に形成したＣＶＤ酸
化膜を、乾燥酸素ガス雰囲気中で再酸化した場合には、
酸素による酸化速度が速いので多結晶シリコンの結晶粒
界にリンが析出する。これがトラップの原因になる。し
たがって、酸化膜は電気的品質が悪いものになる。However, in the above method, the interface state can be reduced, but the effect of reducing traps in the oxide film is small. The trap is caused by hydrogen contained in the oxide film. For this reason,
Since the effect of releasing hydrogen is small in an oxygen gas atmosphere, the effect of reducing traps is reduced. In particular, when a CVD oxide film formed on polycrystalline silicon doped with phosphorus as an impurity is reoxidized in a dry oxygen gas atmosphere,
Since the rate of oxidation by oxygen is high, phosphorus precipitates at the crystal grain boundaries of polycrystalline silicon. This causes a trap. Therefore, the oxide film has poor electrical quality.
【０００４】本発明は、界面準位を低減するとともにト
ラップを低減することによって電気的品質に優れたＣＶ
Ｄ酸化膜の界面酸化方法を提供することを目的とする。The present invention provides a CV having excellent electrical quality by reducing interface states and traps.
An object of the present invention is to provide a method for oxidizing an interface of a D oxide film.
【０００５】[0005]
【課題を解決するための手段】本発明は、上記目的を達
成するためになされたＣＶＤ酸化膜の界面酸化方法であ
る。すなわち、ＣＶＤ法によって基板上に酸化膜を形成
した後、少なくとも酸化窒素ガスを含む酸化性雰囲気中
で基板と酸化膜との界面近傍のみを再酸化することによ
り、熱酸化膜とほぼ同等の界面準位を有する再酸化膜を
形成する。SUMMARY OF THE INVENTION The present invention is a method for oxidizing an interface of a CVD oxide film to achieve the above object. That is, after an oxide film is formed on a substrate by a CVD method, only the vicinity of the interface between the substrate and the oxide film is reoxidized at least in an oxidizing atmosphere containing a nitrogen oxide gas .
And a re-oxidized film having an interface level almost equal to that of the thermal oxide film.
To form .
【０００６】上記再酸化処理に用いる酸化窒素ガスは、
一酸化一窒素ガス、一酸化二窒素ガス、二酸化窒素ガス
および三酸化二窒素ガスのうちの１種または複数種から
なる。[0006] Nitrogen oxide gas used in the reoxidation treatment is as follows:
It is composed of one or more of nitrogen monoxide gas, nitrous oxide gas, nitrogen dioxide gas and nitrous oxide gas.
【０００７】また上記再酸化処理の処理温度は、８００
℃以上１１５０℃以下に設定される。[0007] The processing temperature of the reoxidation treatment is 800
The temperature is set to not less than 1 ° C and not more than 1150 ° C.
【０００８】また、上記ＣＶＤ法を高温酸化ＣＶＤ法で
行うことによって基板上に酸化膜を形成した後、この高
温酸化ＣＶＤ法によって酸化膜を形成した同一処理室内
で、少なくとも酸化窒素ガスを含む酸化性雰囲気中で基
板と酸化膜との界面近傍のみの再酸化処理を行う。An oxide film is formed on a substrate by performing the above-mentioned CVD method by a high-temperature oxidation CVD method, and then an oxide film containing at least a nitrogen oxide gas is formed in the same processing chamber where the oxide film is formed by the high-temperature oxidation CVD method. A reoxidation process is performed only in the vicinity of the interface between the substrate and the oxide film in a neutral atmosphere.
【０００９】[0009]
【作用】上記ＣＶＤ酸化膜の界面酸化方法では、少なく
とも酸化窒素ガスを含む酸化性雰囲気中で基板と酸化膜
との界面近傍のみを再酸化することから、界面準位が熱
酸化膜とほぼ同等の界面準位に低減される。それととも
に、酸化膜中の水素が離脱されるので、チャージトラッ
プが低減される。このとき、酸化膜中のダングリングボ
ンドが窒素原子に置き換えられる。[Action] In the interface oxidation process of the CVD oxide film, since the re-oxidizing only the vicinity of the interface between the substrate and the oxide film in an oxidizing atmosphere containing at least nitrogen oxide gas, the interface state is heat
The interface state is reduced to substantially the same level as the oxide film . At the same time, hydrogen in the oxide film is released, so that charge traps are reduced. At this time, dangling bonds in the oxide film are replaced with nitrogen atoms.
【００１０】上記酸化窒素ガスに、一酸化一窒素ガス、
一酸化二窒素ガス、二酸化窒素ガスおよび三酸化二窒素
ガスのうちの１種または複数種からなるものを用いるこ
とから、再酸化処理雰囲気中では、酸素と窒素とに分解
して、酸素は酸化作用に働き、窒素は水素の離脱効果の
促進に働く。[0010] In addition to the above-mentioned nitric oxide gas,
Since one or more of dinitrogen monoxide gas, nitrogen dioxide gas and dinitrogen trioxide gas are used, they are decomposed into oxygen and nitrogen in the reoxidation treatment atmosphere, and oxygen is oxidized. Nitrogen acts on the action and promotes the desorption effect of hydrogen.
【００１１】また上記再酸化処理は、８００℃以上１１
５０℃以下の温度雰囲気中で行うことから、再酸化が促
進され、トラップが低減される。一方、８００℃よりも
低い温度で再酸化処理を行った場合には界面近傍での再
酸化反応はほとんど起こらない。また、１１５０℃以上
で再酸化処理を行った場合には、通常、基板として用い
るシリコン基板が軟化または溶融する。The reoxidation treatment is performed at 800 ° C. or higher.
Since the re-oxidation is promoted in an atmosphere at a temperature of 50 ° C. or less, traps are reduced. On the other hand, when the reoxidation treatment is performed at a temperature lower than 800 ° C., almost no reoxidation reaction occurs near the interface. When the reoxidation treatment is performed at 1150 ° C. or higher, the silicon substrate used as the substrate is usually softened or melted.
【００１２】また、高温酸化ＣＶＤ法によって酸化膜を
形成した同一処理室内で基板と酸化膜との界面近傍のみ
の再酸化処理を行うことから、ＣＶＤ法による酸化膜の
成膜工程と再酸化処理工程とを連続して行えるので、処
理時間が短縮される。Further, since the re-oxidation process is performed only in the vicinity of the interface between the substrate and the oxide film in the same processing chamber where the oxide film is formed by the high-temperature oxidation CVD method, the oxide film forming process by the CVD method is performed. And the reoxidation step can be performed continuously, so that the processing time is reduced.
【００１３】[0013]
【実施例】本発明における実施例を図１の酸化方法の工
程図によって説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to the process chart of the oxidation method shown in FIG.
【００１４】図１の（１）に示すように、ＣＶＤ法によ
って、基板１１上に酸化膜１２を形成する。上記基板１
１は、単結晶シリコン基板あるいは多結晶シリコン基板
である。または表層が単結晶シリコン層あるいは多結晶
シリコン層で形成されている基板であってもよい。また
上記酸化膜は酸化シリコン（ＳｉＯ2 ）膜からなる。As shown in FIG. 1A, an oxide film 12 is formed on a substrate 11 by a CVD method. Substrate 1
1 is a single crystal silicon substrate or a polycrystalline silicon substrate. Alternatively, a substrate having a surface layer formed of a single crystal silicon layer or a polycrystalline silicon layer may be used. The oxide film is made of a silicon oxide (SiO 2 ) film.
【００１５】次いで図１の（２）に示すように、少なく
とも酸化窒素ガスを含む酸化性雰囲気中で基板１１と酸
化膜１２との界面近傍のみを再酸化処理する。このとき
の再酸化処理雰囲気は一酸化二窒素（Ｎ2 Ｏ）ガスから
なる。または、この再酸化処理雰囲気のガスには、一酸
化一窒素（ＮＯ）ガス、一酸化二窒素（Ｎ2 Ｏ）ガス、
二酸化窒素（ＮＯ2 ）ガスおよび三酸化二窒素（Ｎ2 Ｏ
3 ）ガスのうちの１種または複数種からなるものを用い
る。または、上記酸化窒素ガスと不活性ガス〔例えばヘ
リウム（Ｈｅ），アルゴン（Ａｒ）等〕とを混合したも
の、あるいは上記酸化窒素ガスと窒素（Ｎ2 ）ガスとを
混合したものを用いてもよい。Next, as shown in FIG. 1B, only the vicinity of the interface between the substrate 11 and the oxide film 12 is reoxidized in an oxidizing atmosphere containing at least a nitrogen oxide gas. At this time, the reoxidation treatment atmosphere is made of dinitrogen monoxide (N 2 O) gas. Alternatively, the gas in the re-oxidation treatment atmosphere includes nitrogen monoxide (NO) gas, nitrous oxide (N 2 O) gas,
Nitrogen dioxide (NO 2 ) gas and nitrous oxide (N 2 O)
3 ) Use one or more of the gases. Alternatively, a mixture of the above-described nitrogen oxide gas and an inert gas (eg, helium (He), argon (Ar), or the like), or a mixture of the above-described nitrogen oxide gas and a nitrogen (N 2 ) gas may be used. Good.
【００１６】そして再酸化処理の処理温度を、８００℃
以上１１５０℃以下の温度範囲内の所定の温度に設定す
る。望ましくは、１０００℃程度に設定する。[0016] Then, the processing temperature of the re-oxidation processing is 800 ° C.
The temperature is set to a predetermined temperature within a temperature range of 1150 ° C. or less. Desirably, the temperature is set to about 1000 ° C.
【００１７】上記のような処理雰囲気中で再酸化処理を
行うと、酸化膜１２中から水素２１が離脱する。それと
ともに、ダングリングボンド（図示せず）が、例えば再
酸化雰囲気中の窒素原子（図示せず）に置き換わる。When the re-oxidation is performed in the above-described processing atmosphere, hydrogen 21 is released from the oxide film 12. At the same time, a dangling bond (not shown) is replaced with, for example, a nitrogen atom (not shown) in a reoxidation atmosphere.
【００１８】その後図１の（３）に示すように、上記酸
化膜（１２）を、熱酸化法で形成したものとほぼ同等の
界面準位を有する再酸化膜１３に改質する。Thereafter, as shown in FIG. 1C, the oxide film (12) is modified into a re-oxidized film 13 having an interface level substantially equal to that formed by the thermal oxidation method.
【００１９】上記ＣＶＤ酸化膜の界面酸化方法では、少
なくとも酸化窒素ガスを含む酸化性雰囲気中で基板１１
と酸化膜１２との界面近傍のみを再酸化することから、
界面準位が低減される。それとともに、酸化膜１２中の
水素２１が離脱され、ダングリングボンドが窒素原子に
置き換えられるので、チャージトラップが低減される。In the method for oxidizing an interface of a CVD oxide film, the substrate 11 is oxidized in an oxidizing atmosphere containing at least a nitrogen oxide gas.
Reoxidation only in the vicinity of the interface between the oxide film 12 and
The interface state is reduced. At the same time, hydrogen 21 in oxide film 12 is released, and dangling bonds are replaced with nitrogen atoms, so that charge traps are reduced.
【００２０】また再酸化処理雰囲気のガスに、上記のよ
うな酸化窒素ガス、当該酸化窒素ガスに不活性ガスを混
合したものまたは当該酸化窒素ガスに窒素ガスを混合し
たものを用いることから、再酸化処理雰囲気中では、酸
化窒素ガスが酸素と窒素とに分解して、当該酸素は酸化
作用に働き、当該窒素は水素の離脱効果の促進に働く。Since the gas in the reoxidizing atmosphere is a nitrogen oxide gas as described above, a mixture of the nitrogen oxide gas with an inert gas, or a mixture of the nitrogen oxide gas with a nitrogen gas, In an oxidizing atmosphere, the nitrogen oxide gas is decomposed into oxygen and nitrogen, and the oxygen acts on the oxidizing action, and the nitrogen acts on the promotion of the effect of releasing hydrogen.
【００２１】さらに再酸化処理を８００℃以上１１５０
℃以下の温度雰囲気中で行うことから、再酸化が促進さ
れ、トラップが低減される。一方、８００℃よりも低い
温度で再酸化処理を行った場合には界面近傍での再酸化
反応は起こらない。また、１１５０℃以上で再酸化処理
を行った場合には、通常、基板として用いるシリコン基
板が軟化または溶融する。Further, the reoxidation treatment is performed at a temperature of 800 ° C. or more and 1150
Since the reoxidation is performed in an atmosphere at a temperature equal to or lower than ° C., reoxidation is promoted and traps are reduced. On the other hand, when the reoxidation treatment is performed at a temperature lower than 800 ° C., no reoxidation reaction occurs near the interface. When the reoxidation treatment is performed at 1150 ° C. or higher, the silicon substrate used as the substrate is usually softened or melted.
【００２２】また、上記酸化膜１２の成膜を、例えばシ
ラン（ＳｉＨ4 ）ガスと一酸化二窒素（Ｎ2 Ｏ）ガスと
を用いた高温酸化〔ＨＴＯ（High Temperature Oxid
e）〕ＣＶＤ法によって行う。その後上記酸化膜１２を
形成した同一処理室内で連続して、上記説明したのと同
様の再酸化処理を行う。その条件は上記説明したのと同
様の条件に設定する。そして、基板１１と酸化膜１２と
の界面近傍のみを再酸化処理して、界面準位が低い再酸
化膜１３を形成する。The oxide film 12 is formed by high-temperature oxidation [HTO (High Temperature Oxid) using, for example, silane (SiH 4 ) gas and dinitrogen monoxide (N 2 O) gas.
e)] Performed by the CVD method. Thereafter, the same reoxidation process as described above is continuously performed in the same processing chamber where the oxide film 12 is formed. The conditions are set to the same conditions as described above. Then, only the vicinity of the interface between the substrate 11 and the oxide film 12 is reoxidized to form the reoxidized film 13 having a low interface state.
【００２３】このように、高温酸化ＣＶＤ法によって酸
化膜１２を形成した同一処理室内で基板１１と酸化膜１
２との界面近傍のみの再酸化処理を行うことから、酸化
膜１２の成膜工程と再酸化処理工程とを連続して行え
る。このため、処理時間が短縮される。As described above, the substrate 11 and the oxide film 1 are formed in the same processing chamber where the oxide film 12 is formed by the high-temperature oxidation CVD method.
Since the re-oxidation process is performed only in the vicinity of the interface with the oxide film 2, the step of forming the oxide film 12 and the step of re-oxidation can be performed continuously. Therefore, the processing time is reduced.
【００２４】[0024]
【発明の効果】以上、説明したように本発明によれば、
少なくとも酸化窒素ガスを含む酸化性雰囲気中で基板と
酸化膜との界面近傍のみを再酸化するので、界面準位を
低減することができるとともに、酸化膜中の水素を離脱
してチャージトラップを低減することができる。したが
って、酸化膜の電気的品質の向上が図れる。As described above, according to the present invention,
Since only the vicinity of the interface between the substrate and the oxide film is reoxidized in an oxidizing atmosphere containing at least nitrogen oxide gas, the interface level can be reduced, and the hydrogen in the oxide film is released to reduce the charge trap. can do. Therefore, the electrical quality of the oxide film can be improved.
【００２５】上記酸化窒素ガスに、一酸化一窒素ガス、
一酸化二窒素ガス、二酸化窒素ガスおよび三酸化二窒素
ガスのうちの１種または複数種からなるものを用いるの
で、再酸化処理雰囲気中に酸化窒素を分解した酸素原子
と窒素原子とを同時に存在させることができる。したが
って、酸化処理に用いる酸素原子とトラップの低減を図
る窒素原子とを容易に得ることができる。In addition to the above-mentioned nitric oxide gas,
Since one or more of nitrous oxide gas, nitrogen dioxide gas and nitrous oxide gas are used, oxygen atoms and nitrogen atoms that decompose nitric oxide are present simultaneously in the reoxidation atmosphere. Can be done. Therefore, oxygen atoms used for the oxidation treatment and nitrogen atoms for reducing traps can be easily obtained.
【００２６】また上記再酸化処理を８００℃以上１１５
０℃以下の処理温度で行うので、効率よく再酸化を行う
ことができるとともに、トラップの低減を図ることがで
きる。The above reoxidation treatment is performed at 800 ° C. or more and 115 ° C.
Since the treatment is performed at a processing temperature of 0 ° C. or lower, reoxidation can be performed efficiently and traps can be reduced.
【００２７】また、高温酸化ＣＶＤ法によって酸化膜を
形成した同一処理室内で再酸化処理を行うので、ＣＶＤ
法による酸化膜の成膜工程と再酸化処理工程とを連続し
て行うことができる。このため、処理時間を短縮するこ
とが可能になるので、スループットの向上を図ることが
できる。Since re-oxidation is performed in the same processing chamber where an oxide film is formed by high-temperature oxidation CVD,
The step of forming an oxide film by the method and the step of re-oxidation can be performed continuously. Therefore, the processing time can be reduced, and the throughput can be improved.
【図１】本発明における実施例の酸化膜の形成工程図で
ある。FIG. 1 is a process chart of forming an oxide film according to an embodiment of the present invention.
１１…基板、１２…酸化膜、１３…再酸化膜11 : substrate , 12 : oxide film , 13 : re-oxidized film
Claims (4)
した後、少なくとも酸化窒素ガスを含む酸化性雰囲気中
で基板と酸化膜との界面近傍のみを再酸化処理すること
により、熱酸化膜とほぼ同等の界面準位を有する再酸化
膜を形成することを特徴とするＣＶＤ酸化膜の界面酸化
方法。After an oxide film is formed on a substrate by a CVD method, a re-oxidation process is performed only in the vicinity of the interface between the substrate and the oxide film in an oxidizing atmosphere containing at least a nitrogen oxide gas.
Re-oxidation with almost the same interface state as the thermal oxide film
A method for interfacial oxidation of a CVD oxide film, comprising forming a film .
方法において、 前記酸化窒素ガスは、一酸化一窒素ガス、一酸化二窒素
ガス、二酸化窒素ガスおよび三酸化二窒素ガスのうちの
１種または複数種からなることを特徴とするＣＶＤ酸化
膜の界面酸化方法。2. The method for interfacial oxidation of a CVD oxide film according to claim 1, wherein the nitrogen oxide gas is one of a nitrogen monoxide gas, a nitrous oxide gas, a nitrogen dioxide gas, and a nitrous oxide gas. A method for interfacial oxidation of a CVD oxide film, comprising: one or more species.
化膜の界面酸化方法において、 前記再酸化処理を８００℃以上１１５０℃以下の処理温
度で行うことを特徴とするＣＶＤ酸化膜の界面酸化方
法。3. The interfacial oxidation of a CVD oxide film according to claim 1, wherein the reoxidation treatment is performed at a treatment temperature of 800 ° C. or more and 1150 ° C. or less. Method.
のＣＶＤ酸化膜の界面酸化方法において、 前記ＣＶＤ法を高温酸化ＣＶＤ法で行うことによって基
板上に酸化膜を形成した後、前記高温酸化ＣＶＤ法によ
って酸化膜を形成した同一処理室内で、少なくとも酸化
窒素ガスを含む酸化性雰囲気中で基板と酸化膜との界面
近傍のみを再酸化処理することを特徴とするＣＶＤ酸化
膜の界面酸化方法。4. An interfacial oxidation method of a CVD oxide film according to claim 1, wherein the CVD method is performed by a high-temperature oxidation CVD method to form an oxide film on a substrate. In the same processing chamber where an oxide film is formed by a high-temperature oxidation CVD method, only the vicinity of the interface between the substrate and the oxide film is re-oxidized in an oxidizing atmosphere containing at least a nitrogen oxide gas. Oxidation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35095393A JP3243915B2 (en) | 1993-12-28 | 1993-12-28 | Method for interfacial oxidation of CVD oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35095393A JP3243915B2 (en) | 1993-12-28 | 1993-12-28 | Method for interfacial oxidation of CVD oxide film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07201846A JPH07201846A (en) | 1995-08-04 |
| JP3243915B2 true JP3243915B2 (en) | 2002-01-07 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35095393A Expired - Fee Related JP3243915B2 (en) | 1993-12-28 | 1993-12-28 | Method for interfacial oxidation of CVD oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3243915B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6809717B2 (en) | 1998-06-24 | 2004-10-26 | Canon Kabushiki Kaisha | Display apparatus, liquid crystal display apparatus and driving method for display apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100537554B1 (en) * | 2004-02-23 | 2005-12-16 | 주식회사 하이닉스반도체 | Method of manufacturing oxide film for semiconductor device |
-
1993
- 1993-12-28 JP JP35095393A patent/JP3243915B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6809717B2 (en) | 1998-06-24 | 2004-10-26 | Canon Kabushiki Kaisha | Display apparatus, liquid crystal display apparatus and driving method for display apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07201846A (en) | 1995-08-04 |
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