JP3237150B2 - Exposure method, device manufacturing method, and exposure apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[Table of Contents] The present invention will be described in the following order. Industrial application Conventional technology (FIGS. 5 and 6) Problems to be solved by the invention Means for solving the problem (FIG. 1) Action Embodiment (FIGS. 1 to 4) Effects of the invention

[0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus used for manufacturing a semiconductor element or a liquid crystal display element, and more particularly to an exposure reference plane (for example, a projection image plane of a mask or reticle pattern by a projection optical system). The present invention is suitably applied to an exposure apparatus having a leveling mechanism for matching the surface of a photosensitive substrate.

[0003]

2. Description of the Related Art Conventionally, as one of the manufacturing steps of a semiconductor integrated circuit, a pattern of a reticle or a photomask (hereinafter referred to as a reticle) is formed on a semiconductor wafer (photosensitive substrate).
There is a photolithography process for transferring and exposing the above. this
In the photolithography process, a step-and-repeat type projection exposure apparatus is used as an apparatus for transferring a reticle pattern onto a semiconductor wafer with high resolution.

[0005] That is, as shown in FIG. 5, exposure light that irradiates the reticle 8 with a uniform illuminance from above the reticle 8 mounted on the reticle stage 9 is applied to the reticle 8.
Then, the light enters the projection optical system 7 which is telecentric on both sides (or one side), and the projection optical system 7 converts the projected image of the circuit pattern formed on the reticle 8 into a wafer 5 having a resist layer formed on the surface. The image is projected onto the top.

The wafer 5 is held on a leveling stage 4 via a wafer holder (not shown), and the leveling stage 4 is a Z stage 3 that can be finely moved in the Z direction (optical axis direction).
It is provided above. Further, the Z stage 3 is driven in a step-and-repeat manner by a driving device 41 to form X, Y
Are mounted on the XY stages 1 and 2 which can move two-dimensionally in the directions. When the transfer exposure of the reticle 8 to one exposure area (shot area) on the wafer 5 is completed, the reticle 8 is stepped to the next shot position. . The two-dimensional positions (movement amounts) of the stages 1 and 2 are constantly detected by the laser light wave length measuring device (interferometer) 42 at a resolution of, for example, about 0.01 [μm]. Is the interferometer 4
A movable mirror 6 for reflecting the laser beam from the laser beam 2 is fixed.

As described above, by repeatedly executing pattern exposure on the same wafer 5, a reticle pattern is formed in a matrix on the wafer 5 which has been subjected to development and etching. Become.

After the transfer exposure of the reticle 8 to one exposure area of the wafer 5 is completed, when the wafer 5 is moved to the next shot position, the auto focus sensor 1
Focusing is performed by using 3 and 17. That is, the illumination optical system 13 irradiates the image of the pinhole or the slit onto the surface of the wafer 5 via the half mirror 14. At this time, the light reflected on the surface of the wafer 5 is reflected by the half mirror 15 and monitored by the light receiving optical system (detector) 17. The detector 17 can detect a vertical displacement of the wafer 5 with respect to the image plane as a lateral displacement, and measures the lateral displacement amount by the Z / θ control unit 10, whereby the conjugate of the wafer 5 and the reticle 8 is obtained. The stage control unit 11 controls the movement of the Z stage 3 so as to maintain the relationship.

At the same time, the projection exposure apparatus uses collimator type leveling sensors 12 and 16 to match the projection image plane (exposure reference plane) of the pattern of the reticle 8 by the projection optical system 7 with the surface of the wafer 5. Leveling control is performed. That is, the illumination optical system 12
Illuminates the exposed surface of the wafer 5
The return light is received by a light receiving optical system (detector) 16. Here, the tilt amount of the wafer 5 with respect to the optical axis AX direction (or the imaging plane of the projection optical system 7) is determined by the detector 16
Is detected as an amount of lateral shift on the light receiving surface of. The light receiving surface of the detector 16 is divided into four parts, and the Z / θ control unit 10 changes the reticle 8 by the output difference between the four divided light receiving parts.
The degree of inclination of the exposure surface of the wafer 5 with respect to the pattern image is measured, and based on the result, the stage control unit 11 drives the leveling stage 4 that can tilt with respect to the optical axis AX, and Exposure surface and projection optical system 7
Is controlled so that the image forming plane substantially coincides with the image forming plane. The leveling sensors 12 and 16 are adjusted in advance so that the imaging plane of the projection optical system 7 becomes a zero-point reference, that is, the reflected light from the wafer surface is focused on the center of the four-divided light receiving unit. . The auto focus sensor 13,
The configuration of the leveling sensor 17 and the leveling sensors 12 and 16 are disclosed in, for example, Japanese Patent Application Laid-Open No. 58-113706.

After these series of operations are completed, the control device 40
By starting the exposure, the exposure can be performed on a new exposure area while making the surface of the area substantially coincide with the imaging plane of the projection optical system 7.

[0010]

In this type of projection exposure apparatus, the movable mirror 6 is disposed at the end of the Z stage 3 disposed on the XY stages 1 and 2. The amount of lateral displacement of the wafer 5 in the X and Y directions due to the above can be monitored by the interferometer 42.

However, in a configuration in which the leveling stage 4 is provided between the wafer 5 and a stage system composed of the moving stages 1, 2, and 3 in the X, Y, and Z directions, the leveling stage is moved with respect to the optical axis AX. The lateral displacement of the wafer 5 in the X and Y directions during the tilt driving cannot be monitored by the interferometer 42. In this case, the lateral displacement of the wafer 5 is minimized by the configuration shown in FIG. There are ways to control it. The detailed configuration is disclosed in JP-A-62-274201.

FIG. 6 is a top view of the stage system, which is mounted on the Z stage 3. Moving mirrors 6X and 6Y for monitoring the movement amounts in the X and Y directions are arranged on the Z stage 3, so that the positions (movement amounts) in the X and Y directions can be monitored, respectively.

On the Z stage 3, stage supporting members 19A, 19B, 19 for supporting the leveling stage 4 are provided.
C is fixed. The stage support members 19A, 1
9B and 19C have joining members 20A, 21A and 20B.
The leaf springs 22A, 22B, 22C are joined via B, 21B, and 20C, 21C, respectively.

The leveling stage 4 is joined to the leaf springs 22A, 22B and 22C by joining members 27A, 27B and 27C, whereby the leveling stage 4 is placed in the space above the Z stage 3 by the leaf springs 22A, 22B.
And 22C.

Here, each joint will be described. Joining members 20A and 20A fixed to stage support member 19A
1A is joined to leaf spring 22A at joining points 23A and 24A, and joining member 27A fixed to leveling stage 4 is joined to leaf spring 22A at joining points 25A and 26A. The joining members 20B and 21B fixed to the stage support member 19B are joined to the leaf spring 22B at joining points 23B and 24B, and the joining member 27B fixed to the leveling stage 4 is joined to the leaf spring 22B at the joining points 25B and 25B. 26B. The joining members 20C and 21 fixed to the stage support member 19C
C is joined to leaf spring 22C at joining points 23C and 24C, and joining member 27C fixed to leveling stage 4 is joined to leaf spring 22C at joining points 25C and 26C.

The leveling stage 4 is moved to the optical axis AX (FIG. 5).
When each of the leaf springs 22A, 22B
Push pins that can be driven up and down are inserted below the centers OA, OB and OC of the points OA, OB and OC.
The leveling stage 4 can be arbitrarily tilted according to the amount of drive of the push pin in the above, whereby the wafer 5 held by the wafer holder 18 placed on the leveling stage 4 can be arbitrarily tilted. It has been made like that.

By using the leaf springs 22A, 22B and 22C having such a configuration, the rattling of the leveling stage 4 is eliminated, and even if the leveling stage 4 is tilted, the lateral displacement of the wafer 5 due thereto is minimized. be able to.

However, in a recent projection exposure apparatus,
Further improvement in the alignment accuracy between the projected image of the reticle pattern and the wafer (exposure region) is required in response to the further increase in the degree of integration of the semiconductor integrated circuit to be manufactured, and the leveling stage 4 is tilted. In this case, it is necessary to further reduce the amount of lateral displacement. Here, as an alignment system in this type of projection exposure apparatus, a so-called die-by-die alignment (D / D) system in which alignment is performed every shot is disclosed in, for example, Japanese Patent Application Laid-Open No. 61-44429. Enhancement Global
There is an alignment (EGA) method. The EGA method measures the positions (coordinate values) of a plurality (about 3 to 16) of exposure regions located near the outer periphery of a wafer (and the center thereof), and calculates a shot array calculated from these measured values by a statistical method. The wafer stage is uniquely stepped according to the coordinates.

Now, a TTR (Through The Reti) for detecting a reticle mark and a wafer mark via a projection optical system.
When the exposure is performed by the D / D method using the alignment system of the cle) method, the lateral displacement of the wafer 5 when the leveling stage 4 is tilted can be detected by the alignment system. An overlay (alignment) error with the exposure area can be corrected. However, the D / D system has poor throughput, and the EGA system has recently become mainstream.
In the A method, there is a problem that the lateral deviation amount of the wafer 5 when the leveling stage 4 is inclined becomes an alignment error as it is. In order to correct this, alignment must be performed again, and there is a problem that throughput is reduced.

The present invention has been made in view of the above points, and further reduces the influence of lateral displacement of a wafer caused by driving of a leveling stage to reduce the alignment accuracy of an exposure area on a wafer and the alignment accuracy at the time of exposure. Therefore, an exposure apparatus capable of coping with higher integration of a semiconductor integrated circuit is to be realized.

[0021]

[Means for Solving the Problems] In order to solve the above-mentioned problems
In the invention according to claim 1, a predetermined pattern is formed on the substrate.
As an exposure method for exposing upward, the substrate is
The substrate and the predetermined angle generated by adjusting the inclination angle of the substrate.
The relative shift amount in the predetermined plane direction with respect to the pattern,
Measured information on the relationship between plate tilt angle adjustment and adjustment amount
And adjusting the measured information and the tilt angle adjustment of the substrate.
Based on the amount, the predetermined pattern and the substrate
The relative position control in a predetermined plane direction is executed. This
In the exposure method of (1), as in the invention described in claim 4,
Storing the actually measured information, based on the stored information;
Thus, it is also possible to execute the relative position control. Ma
According to the seventeenth aspect, a predetermined pattern is formed on the substrate.
An exposure apparatus for exposing the substrate to a predetermined surface
Adjusting means for executing the inclination angle adjustment of
The substrate and the place generated by adjusting the tilt angle
The relative displacement in the predetermined plane direction from the fixed pattern,
Provides information on the relationship between substrate tilt angle adjustment and the amount of adjustment.
Actual measurement means to measure, and before the actual measurement by the actual measurement means
Information and the adjustment amount of the tilt angle adjustment of the substrate.
In the direction of the predetermined plane between the predetermined pattern and the substrate,
And control means for performing the relative position control of (i). This dew
In the optical device, as in the invention according to claim 18,
Storage means for storing information actually measured by the actual measurement means
And the control means is configured to store the information before
The relative position control is executed based on the actual measurement information.
It may be configured as follows.

[0022]

The exposure method according to claim 1 or the exposure method according to claim 17
According to the exposure apparatus, the inclination angle of the substrate with respect to the predetermined surface can be adjusted.
Generated between the substrate and the predetermined pattern.
The relative displacement amount in the fixed surface direction and the inclination angle adjustment of the substrate
Information about the relationship with the adjustment amount is measured. And before
The relative relationship between the predetermined pattern and the substrate in the predetermined plane direction.
The position is determined by the measured information and the tilt angle of the substrate.
Is controlled based on the amount of adjustment.

[0023]

BRIEF DESCRIPTION OF THE DRAWINGS FIG.

In FIG. 1, in which parts corresponding to those in FIG.
Alternatively, the alignment is performed by the second alignment system 37.

That is, the first alignment system 36 irradiates the alignment beam LB1 to the diffraction grating mark provided on the wafer 5 via the projection optical system 7 as disclosed in, for example, Japanese Patent Application Laid-Open No. 2-272305. TTL made
(Through The Lens) method, and a laser beam (LB) parallel to the diffraction grating mark
1) is simultaneously irradiated to form one-dimensional interference fringes, and a so-called LIA system (Laia system) (LaLa
It consists of an optical system called ser Interferometric Alignment). At this time, laser beams (LB
In 1), a frequency difference is given, and an interference fringe flows at a beat frequency in the direction of the fringe at a high speed according to the frequency difference (beat frequency). The position of the diffraction grating mark is determined with reference to various elements (phase differences). An output signal (phase difference information) from the first alignment system 36 is input to an alignment control device 35, where a mark position (coordinate value) is calculated based on position information from the interferometer 42. It is output to 40. Although FIG. 1 shows the first alignment system 36 for detecting the mark position in the Y direction, actually another set of the first alignment system for detecting the mark position in the X direction is arranged. It is assumed that

The first alignment system 36 detects the position of the wafer 5 (exposure area) placed on the leveling stage 4, that is, by continuously detecting the wafer mark attached to the exposure area, the alignment control device 35
The leveling stage 4 as the phase difference in the optical axis AX
The amount of lateral displacement (movement) of the wafer in the Y direction when the wafer is tilted with respect to the direction can be directly detected, and the detected lateral displacement is sent to the control device 40.

The second alignment system 37 is a so-called off-axis alignment system constituted by an optical system that does not pass through the projection optical system 7, and is provided on the Z stage 3 at a position substantially at the same height as the wafer surface. The obtained fiducial mark 38 or wafer mark is irradiated using broadband illumination light, and the resulting reflected light is imaged on a reference plate provided inside alignment microscope 37A. On this index plate, index marks arranged so as to sandwich the enlarged image of the fiducial mark 38 are formed, and the fiducial mark 3 is formed by an image processing method.
8 and the positional relationship between the index marks in the X and Y directions are detected by the alignment control device 35 (FIA system: Field Im).
age Alignment), and the detection result is sent to the control device 40.

The fiducial mark 38 is arranged on the Z stage 3 so that no lateral displacement occurs even when the leveling stage 4 is driven. Therefore, the measured value detected by the second alignment system 37 is not affected by the driving of the leveling stage 4.

Here, the controller 40 measures the amount of lateral displacement of the wafer (exposure area) due to the inclination of the leveling stage 4. That is, the first alignment system 3
The relationship between the amount of drive of the pivot and the amount of lateral displacement of the wafer 5 is determined by driving the pivot (which drives the leveling stage 4 in an inclined manner) while monitoring the diffraction grating mark using the reference numeral 6. At this time, if the XY stages 1 and 2 are shifted (moved), the above relationship cannot be accurately obtained. Therefore, the XY stages 1 and 2 are servo-controlled based on the position information from the interferometer 42 so that the XY stages 1 and 2 do not shift during measurement.

However, despite the fact that the XY stage is stopped due to the air fluctuation,
Since the output value changes as if it were moved, if the positions of the XY stages 1 and 2 are controlled in response to this output change, the relationship between the amount of driving of the pivot and the amount of lateral displacement of the wafer 5 cannot be accurately obtained. Therefore, the above-described relationship is measured while detecting the fiducial mark 38 using the second alignment system 37.

At this time, the XY stages 1 and 2 may be servo-controlled using the output of the second alignment system 37.
Alternatively, the position information of the interferometer 42 is used as servo control of the XY stages 1 and 2, and the second alignment system 37 determines whether or not the XY stages 1 and 2 have shifted due to the influence of air fluctuation.
When the XY stages 1 and 2 shift due to the influence of air fluctuation, the second alignment system 3
7 may be used to correct the measurement result of the above relationship.

The state where the second alignment system 37 detects the fiducial mark 38 (XY stages 1 and 2)
(The position is fixed), and a diffraction grating mark is selected (or formed) so that the first alignment system 36 can detect the diffraction grating mark.

FIG. 2 shows a detailed configuration for driving the leveling stage 4 at the time of leveling adjustment.
FIG. 2, in which parts corresponding to those in FIG. 6 are assigned the same reference numerals, shows a pivot system provided below the leaf spring 22B.
The control unit 10 rotates the motor 34, and rotates the male screw 32 interlocked with the motor 34 with respect to the female screw 33. At this time, the outer frame of the female screw 33 having the inclination is shifted laterally, and the roller 31 in contact with the female screw 33 is pushed up. The roller 2 supported on the pivot supporting portion 29 by the roller 31
8 are driven in conjunction with each other to push up the leaf spring 22B. Here, the vertical movement amount of the pipette 28 is the potential 30
Is monitored constantly. Also, a similar-structured pivot is provided for the leaf springs 22A and 22C.

In this embodiment, as shown in FIG. 3, a method is used in which the tilt angle θ of the wafer 5 is changed by fixing the OA portion and moving each of the pivots below OB and OC up and down. That is, OA becomes the center of rotation, and θ
_When tilting _X (the tilt of the wafer 5 in the X direction), the respective pits below OB and OC are driven in the same direction, and θ
_When tilting _Y (the tilt of the wafer 5 in the Y direction), the respective pivots below OB and OC are driven in opposite directions. In this way, the leveling stage 4 can be driven three-dimensionally in the space above the Z stage 3.

In order to drive the leveling stage 4 having such a structure to make the pattern images of the wafer 5 and the reticle 8 parallel, a parallel flat glass (harving) 50 used for calibration of the leveling sensors 12 and 16 is used.
(FIG. 2) is rotated in a direction in which θ _X is changed and in a direction in which θ _Y is changed.
Each of the pivots 28 is driven so that each output difference from the drive 6 becomes zero.
The first alignment system 36 (FIG. 1) observing the upper diffraction grating mark detects the horizontal shift, whereas the second alignment system 37 (FIG. 1) does not. That is, the measurement result (L
X, LY) and the measurement results (F
The variation amount of the difference (LX-FX, LY-FY) (representing the mark position on the XY coordinate system) of X, FY) is directly used as the lateral displacement amount at the time of driving each of the pivots.

In the driving method of the leveling stage 4, the inclination θ of the wafer 5 obtained by each output difference of the four-divided detector 16 is set such that each output difference of the detector 17 is zero.
The closed control for driving the motor 34 and the open control based on the output value of the potentiometer 30 for the required driving amount of each of the pivots calculated from the inclination amounts θ _X and θ _Y are used.

The operation of correcting the lateral displacement of the wafer 5 during the leveling adjustment in the above configuration will be described.

First, as a process before leveling adjustment, a process of storing in advance a lateral displacement amount of the wafer 5 with respect to a driving amount of each of the pivots 28 is executed. That drive amount D _B and D _C of Pipotsuto under the OB and OC for fixed OA in Figure 3, the following equation

(Equation 1)

(Equation 2) Expressed Te Niyotsu, when tilting the wafer 5 by theta _X and theta _Y to collimate the reticle 8, the controller 40 Yotsute leveling stage leveling driving unit 45 a target drive amount as D _B and D _C 4 Is driven, the output of the detector 16 is checked, and the processing operation is continued until the output of the detector 16 becomes 0. As a result, when the output of the detector 16 becomes 0, the driving amount of the
And the lateral shift amount at that time is determined by the first alignment system 36.
And the measurement result of the second alignment system 37.

FIG. 4 is a graph plotted lateral displacement amount obtained connexion by the above method, FIG. 4 (A) D _B and D _C
Value represents the lateral shift amount X in the X direction on numbers D _X isolated on factors X direction, and FIG. 4 (B) Y on numbers D _Y separating the value of D _B and D _C to cause the Y-direction Represents the amount of lateral displacement Y in the direction. The multi approximate curves F (D _X ) and F ′ (D _Y ) are obtained from this graph, and the multi approximate curves are stored in the control device 40.

After executing the storage process as the pre-process, when performing the leveling adjustment at the time of alignment or exposure, a correction process for correcting the lateral displacement of the wafer 5 caused by these processes is executed.

That is, the wafer 5 is placed on the holder 18, and the leveling stage 4 is driven by the close control.
At this time examining the driving amount D _B and D _C of Pipotsuto under each central point OB and OC of leveling stage 4 when the output from Deitekuta 16 has decreased to 0. X in this
The factors (D _X , D _Y ) for the respective directions of Y are as follows because the X side drives the same direction and the Y side drives the opposite direction.

(Equation 3)

(Equation 4) The lateral shift amount at that time is input to the functions F (D _x ) and F ′ (D _y ) stored in the control device 40 to determine the lateral shift amounts X and Y.
The direction moving stage 1 and the Y direction moving stage 2 are driven in the X direction and the Y direction by an amount to correct the lateral displacement amounts X and Y, respectively. In this manner, the position of the wafer 5 is corrected by an amount shifted by the leveling adjustment with respect to the exposure position. By performing the exposure in this state, the pattern of the reticle 8 can be surely put in a target area on the wafer 5. Can be exposed.

According to the above configuration, the lateral displacement of the wafer 5 when the leveling adjustment is performed can be corrected with high accuracy, and the alignment and the arrangement of the unit exposure regions can be performed with higher accuracy.

In the above embodiment, the case where the first alignment system 36 and the second alignment system 37 are used has been described. However, the present invention is not limited to this, and the interferometer 42 may be used.
Stage position measurement system and first alignment system 3 using
6, the lateral shift amount of the exposure surface may be obtained. In this case, since the measurement error of the interferometer 42 due to the air fluctuation is included in the lateral shift amount, it is necessary to obtain the lateral shift amount by sufficient averaging.

TTL is used as the first alignment system 36.
Although the case of using the system has been described, the present invention is not limited to this, and a TTR system configured to irradiate an alignment beam via the reticle 8 may be used.

In the above embodiment, the leveling stage 4 is placed on the Z stage 3 on which the movable mirror 6 is arranged.
Is described, but the present invention is not limited to this, and the present invention is also suitably applied to a stage having a focus system and having a configuration in which lateral displacement occurs.

In the above-described embodiment, the case where the measured value is approximated to a multidimensional function when the lateral displacement amount is stored in advance has been described. However, the present invention is not limited to this, and the measured value is stored as it is. May be.

When θ _X and θ _Y are simultaneously moved,
A two-dimensional map for D _X , D _Y and lateral displacement amounts X, Y may be created.

In the above-described embodiment, the case where the lateral displacement at the exposure position (optical axis position) is corrected has been described. However, the leveling stage 4 is tilted at each alignment position of the first and second alignment systems 36 and 37. In this case, a similar effect can be obtained by applying the present invention. Further, in the above embodiment, the relationship between the driving amount of the pivot 28 and the amount of lateral displacement may be stored in the form of a mathematical expression or a table by an experiment or simulation. At this time,
Even if the pivot 28 is driven by the same amount, the lateral shift amount for each exposure area on the wafer corresponds to the distance between the center point of each exposure area and the fixed point (operating point) OA serving as the rotation fulcrum of the leveling stage 4. And can be different. For this reason, it is desirable to divide the exposure area on the wafer into several blocks for each exposure area and obtain the relationship between the driving amount of the pivot 28 and the lateral shift amount for each block.

In the above embodiment, the XY stages 1 and 2 are driven to correct the lateral displacement.
For example, a field lens may be disposed between the reticle 8 and the projection optical system 7, and the projection image of the reticle pattern may be shifted in the X and Y directions on the wafer by driving the field lens. Further, in the above-described embodiment, for example, when the exposure is performed by the EGA method, the leveling is performed for each exposure area. However, the average inclination angle of the entire wafer (or each exposure area) is set to be equal to the average inclination angle. Tilting the leveling stage 4 only once before exposure based on the so-called global leveling, or dividing the exposure area on the wafer into several blocks, and performing the leveling stage only once based on the average tilt angle for each block. The same effect can be obtained by applying the present invention even when performing so-called block leveling by tilting 4.

In the above embodiment, the case where the leveling stage 4 is tilted by the two-point driving method has been described. However, for example, the three-point driving method in which all three operating points OA, OB, and OC are driving points is used. It may be hot. 3 more
When the point driving method is adopted, the Z stage 3 and the leveling stage 4 can be used together. In this dual-purpose type, the amount of lateral displacement when the wafer 5 is tilted can be detected by the interferometer. Although it is not necessary to predict the lateral deviation amount as in the example, if the lateral deviation amount is predicted in accordance with the driving amount of the pivot 28 for each exposure area as in the above-described embodiment, the lateral deviation amount due to air fluctuation or the like can be measured. An error can be removed, and alignment can be performed with higher accuracy.

In the above-described embodiment, the collimator type is employed as the leveling sensors 12 and 16. For example, each of a plurality of points in an image field (corresponding to an exposure area on a wafer) of the projection optical system 7 is used. An auto focus sensor that can detect the height position (focal position) of the wafer 5 in the above may be used.

Further, in the above-described embodiments, the projection type exposure apparatus (stepper, aligner, etc.) has been described as an example. However, the present invention is not limited to this. For example, the proximity method, the contact method, and the step-and- The present invention can be applied to an inspection apparatus, a processing apparatus, and the like, such as a scan type exposure apparatus and an X-ray exposure apparatus.

[0053]

The exposure method according to claim 1 or claim 1
According to the exposure apparatus of No. 17, the inclination angle of the substrate with respect to the predetermined surface
Between the substrate and a predetermined pattern generated by the degree adjustment
The relative displacement amount in the predetermined plane direction and the inclination angle of the substrate
Information about the relationship of the adjustment to the amount of adjustment is measured. Soshi
In the direction of the predetermined plane between the predetermined pattern and the substrate,
Is the relative position of the measured information and the inclination angle of the substrate.
It is controlled based on the adjustment amount of the degree adjustment. For this reason,
Even if the inclination angle of the substrate is adjusted, the predetermined pattern
Accuracy of the relative position control between the
It is not damaged by quantity. Also, the relative position
Because control is performed based on information measured,
For example, the difference between the adjustment amount of the substrate tilt angle adjustment and the relative deviation amount
Without actually measuring the relationship, the relative
Information about the predetermined amount and obtain the predetermined pattern and the
Compared with the case where the relative position with respect to the substrate is to be controlled.
, It is possible to more accurately control the relative position
It is.

[Brief description of the drawings]

FIG. 1 is an overall configuration diagram showing an embodiment of an exposure apparatus according to the present invention.

FIG. 2 is a sectional view showing a detailed configuration of a leveling stage.

FIG. 3 is a plan view showing a method of tilt-driving a leveling stage.

FIG. 4 is a graph showing the relationship between the driving amount of the pivot and the amount of lateral displacement using a multidimensional approximate curve.

FIG. 5 is a configuration diagram showing a conventional exposure apparatus.

FIG. 6 is a plan view showing a configuration of a leveling stage.

[Explanation of symbols]

4 Leveling stage, 6 Moving mirror, 7 Projection optical system, 8 Reticle, 10 Z / θ control unit, 16, 17 Detector, 22A, 22B, 22
C ... leaf spring, 28 ... pot, 30 ... potential, 38 ... fiducial mark, 50 ... harving.

──────────────────────────────────────────────────続 き Continued on the front page (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/027 G01B 11/00 G03F 9/00 G05D 3/00

Claims (28)

(57) [Claims] 1. An exposure method for exposing a predetermined pattern onto the substrate, comprising: a relative shift amount between the substrate and the predetermined pattern in a direction of the predetermined surface, which is generated by adjusting an inclination angle of the substrate with respect to a predetermined surface. And information on the relationship between the adjustment amount of the inclination angle adjustment of the substrate and the predetermined surface of the predetermined pattern and the substrate based on the actually measured information and the adjustment amount of the inclination angle adjustment of the substrate. An exposure method, comprising performing relative position control in directions. 2. The exposure method according to claim 1, wherein said predetermined pattern is exposed on said substrate.
At the exposure position where the plate is positioned,
When performing the adjustment of the tilt angle of the substrate,
An exposure method , wherein the relative position control is performed in a predetermined plane direction . 3. The exposure method according to claim 1, wherein the position of the substrate is adjusted to detect position information of the substrate.
At the predetermined alignment position,
When performing the tilt angle adjustment of the substrate,
An exposure method , wherein the relative position control is performed in a fixed surface direction . 4. The exposure method according to claim 1, wherein the measured information is stored, and the relative position control is performed based on the stored information. Method. 5. The exposure method according to claim 4, wherein the actually measured information is stored as a function related to an adjustment amount of the tilt angle adjustment. 6. The exposure method according to claim 4, wherein storing the actually measured information includes executing an approximation process based on an actually measured value. 7. The exposure method according to claim 4, wherein the measured information is stored, and a relative shift amount between the substrate and the predetermined pattern in the predetermined plane direction and an adjustment of the tilt angle adjustment. An exposure method comprising storing a table relating to an amount. 8. The exposure method according to claim 4, wherein the storage of the actually measured information is different from the relative displacement amount in the first direction in the predetermined plane and the first direction in the predetermined plane. An exposure method, which includes creating a two-dimensional map relating to a relative displacement amount in a second direction. 9. The exposure method according to claim 4, wherein when performing relative position control between the predetermined pattern and the substrate in the predetermined direction, the relative position between the predetermined pattern and the substrate in the predetermined direction is controlled. An exposure method, comprising: measuring a relative displacement amount between the predetermined pattern and the substrate in the direction of the predetermined surface, which is generated by the adjustment of the tilt angle, by a detection unit that detects information regarding a position. 10. The exposure method according to claim 9, wherein said detection means includes an alignment system for detecting a predetermined mark. 11. The exposure method according to claim 4, wherein the relative position control is performed using a stage capable of holding the substrate and movable along the predetermined surface. Method. 12. The exposure method according to claim 4, wherein the relative position control is performed by a field lens. 13. The exposure method according to claim 4, wherein the plurality of substrates are exposed, wherein the adjustment of the tilt angle is performed only once for each substrate. 14. The exposure method according to claim 4, wherein the adjustment of the tilt angle is performed for each predetermined range on the substrate. 15. The exposure method according to claim 4, wherein the predetermined pattern is transferred to each of a plurality of regions on the substrate for each of the plurality of regions. An exposure method which is executed for each of a predetermined number of regions among the above. 16. A device manufacturing method, wherein a device is manufactured using a substrate having the predetermined pattern exposed by the exposure method according to claim 1. Description: 17. An exposure apparatus for exposing a predetermined pattern onto the substrate, comprising: an adjustment unit configured to adjust an inclination angle of the substrate with respect to a predetermined surface; and the substrate generated by the adjustment of the inclination angle by the adjustment unit. Actual measurement means for actually measuring information on the relationship between the relative displacement amount in the predetermined plane direction with respect to the predetermined pattern and the adjustment amount of the inclination angle adjustment of the substrate, and the information actually measured by the actual measurement means and the An exposure apparatus, comprising: control means for controlling a relative position of the predetermined pattern and the substrate in a direction of the predetermined plane based on an adjustment amount of tilt angle adjustment. 18. The exposure apparatus according to claim 17, further comprising storage means for storing information actually measured by said actual measurement means, wherein said control means is configured to store information based on the actual measurement information stored in said storage means. An exposure apparatus for performing the relative position control. 19. The exposure apparatus according to claim 17, wherein the actual measurement unit includes a detection device that detects information on the relative shift amount. 20. The exposure apparatus according to claim 19, wherein the detection device has a plurality of alignment systems for detecting a predetermined mark. 21. The exposure apparatus according to claim 19, wherein the exposure apparatus projects the predetermined pattern onto the substrate via a projection optical system, and the detection apparatus includes an optical system that does not pass through the projection optical system. And an off-axis alignment system for detecting a predetermined mark. 22. The exposure apparatus according to claim 17, further comprising a reference mark provided at a position not affected by the adjustment of the tilt angle by the adjustment unit. apparatus. 23. The exposure apparatus according to any one of claims 17 to 22, wherein the adjusting means, before performing the tilt angle adjustment, the angle detection that detects an inclination angle of the substrate with respect to the predetermined plane An exposure apparatus comprising the apparatus. 24. The exposure apparatus according to claim 17, wherein the actual measurement unit includes an adjustment amount detection device that detects an adjustment amount of the tilt angle adjustment by the adjustment unit. Exposure equipment. 25. The exposure apparatus according to claim 17, wherein the exposure device irradiates a mirror provided at a position not affected by the adjustment of the tilt angle by the adjustment unit with a laser based on a result of the laser irradiation. An exposure apparatus comprising: a position detection device that detects position information of the substrate in the predetermined plane direction. 26. The exposure apparatus according to claim 17, wherein the adjusting unit adjusts the tilt angle by adjusting positions of three points on the substrate with respect to the predetermined surface. An exposure apparatus, which is a three-point drive type adjusting means. 27. The exposure apparatus according to claim 17, wherein the control means has a stage capable of holding the substrate and movable in the direction of the predetermined plane. Exposure equipment. 28. The exposure apparatus according to claim 17, wherein the control unit includes a field lens that shifts an image of the predetermined pattern on the substrate. .