JP3235623B2 - Exposure method, exposure apparatus, projection exposure system, and method of manufacturing semiconductor device using the above method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a projection exposure system suitable for use in a case where a plurality of different projection exposure apparatuses are used together, for example, in overlapping exposure between different layers on a photosensitive substrate for photolithography.

[0002]

2. Description of the Related Art In recent years, a step-and-repeat type reduced projection type exposure apparatus (a so-called stepper) has been used in the manufacture of VLSI and the like, and has greatly contributed to improvement in productivity. With this type of projection exposure apparatus, with the miniaturization of the line width of the pattern on the reticle to be projected and the high integration of the pattern itself, the overlay accuracy between different layers on the semiconductor wafer has been improved. It is required to be improved. This is particularly noticeable between different devices.

Recently, various types of projection exposure apparatuses having different projection optical systems having different numerical apertures, magnifications, or image fields (projection fields) have emerged. In a VLSI manufacturing plant, the required resolution and throughput are taken into consideration. And one super LS
In the manufacturing process of I, exposure between different layers is often assigned to different projection exposure apparatuses. In the photolithography process of semiconductor manufacturing, projection exposure apparatuses having different projection magnifications and projection fields, or apparatuses having different projection optical systems such as a refraction system, a reflection system, or a combination thereof are used. In order to manufacture a semiconductor as designed that satisfies the intended characteristics by mixing and using the plurality of projection exposure apparatuses, it is necessary to improve the overlay accuracy between the layers in the so-called mix-and-match. Required.

[0004] The main factors that affect the overlay accuracy are the alignment accuracy of the exposure shot area between the layers with respect to the projected image of the reticle pattern by the projection optical system,
There is matching accuracy of distortion including distortion between each projection optical system used for exposure in each layer. This application deals with the latter case of distortion matching between the projection optical systems.

Generally, even in the case of projection optical systems having the same structure, at present, aberration curves showing distortion characteristics are slightly different for each projection optical system. FIG. 5A shows an example of distortion characteristics of a projected image. In FIG. 5A, a rectangular graphic 1 shown by a broken line is an outline of an ideal image without distortion. The rectangular frames 2 to 5 indicated by broken lines surrounding the vertexes of the four corners of the outline 1 of the ideal image indicate allowable ranges of distortion at the vertices of the four corners. Actually, not only the four corners, but also the tolerances of the distortion are determined at each of the sides of the contour 1 and at many points inside the contour 1, respectively. This will be described by taking only the distortion in the example as an example.

In a conventional projection exposure apparatus in which the contour 1 shown in FIG. 5A is used as the contour of an ideal image, when the distortion is adjusted, the four corners are moved in such a manner that the distortions fall within rectangular frames 2 to 5, respectively. Will be After that, the distortion characteristic of the projection optical system is fixed unless readjustment for compensating for the temporal change is performed.

[0007]

However, when the distortion characteristic is a kind of device constant as described above, there is a possibility that the best matching cannot be obtained when a plurality of projection exposure devices are mixedly used. For example, the distortion characteristic of the first projection exposure apparatus that exposes the first layer of the wafer is as shown by a solid line 6 in FIG. FIG. 5 shows a distortion characteristic of the second projection exposure apparatus for exposing the second layer.
It is assumed that the state is as shown by the solid outline 7 in FIG. Conventionally, in each of a plurality of projection optical systems, adjustment is made so as to drive each distortion characteristic into one ideal state (broken line 1 in FIG. 5), and the distortion characteristic of each device is within an allowable range. Therefore, the adjustment of the distortion characteristics has been completed in these states. In this case, since the distortion characteristic of the first projection exposure apparatus is narrow on the right side and the distortion characteristic of the second projection exposure apparatus is narrow on the left side, superposition exposure is performed using these two apparatuses. Even if it is performed, the matching accuracy is poor even though the distortion characteristics have been adjusted in advance. This is apparent from FIGS. 5 (a) and 5 (b), although the matching accuracy between the two depends on the adjustment of the distortion characteristics, although there is room for improvement within the allowable range. This is because the adjustment is not appropriate and is used as it is.

Conversely, as an extreme example, it is assumed that among a plurality of projection exposure apparatuses, there is an apparatus whose distortion characteristic is shown by a solid outline 8 in FIG. 5C. This distortion characteristic is narrow on the right side, but slightly out of the allowable range. However, from the viewpoint of distortion characteristic matching, the device of FIG. 5C is better matched to the device of FIG. 5A than the device of FIG. 5B. Such inconvenience is due to the fact that each projection exposure apparatus independently drives distortion characteristics to an ideal state.

SUMMARY OF THE INVENTION In view of the foregoing, it is an object of the present invention to provide an exposure method in which, when a plurality of projection exposure apparatuses are mixed, a distortion characteristic between the apparatuses is matched with high accuracy. The present invention further relates to such exposures.
Projection exposure system capable of performing optical method, and exposure apparatus,
And manufacture semiconductor devices with high accuracy using the exposure method
Another object of the present invention is to provide a method for manufacturing a semiconductor device that can
I do.

[0010]

A projection exposure system according to the present invention comprises a mask (11-i) as shown in FIG.
A projection optical system (18-i) for exposing an image of a pattern on (i = 1 to n) onto a photosensitive substrate (14), and a distortion measurement for predicting or measuring distortion of the projection optical system (18-i). Means (13-i) and correction means (1) for correcting the state of distortion of the projection optical system (18-i) based on external control information.
2-i, 19-i) and a possess respectively, the photosensitive substrate
A plurality of projection exposure apparatuses (10-
1 to 10-n) and the plurality of projection exposure apparatuses (10-n).
1 to 10-n) of the projection optical system (18-
Data representing the state of distortion of i) is collected, and each layer is exposed to a plurality of layers formed on the photosensitive substrate (14).
The history of information on the processed projection exposure apparatus is stored, and control information for instructing the plurality of projection exposure apparatuses (10-1 to 10-n) individually on the state of distortion of the projection optical system (18-i) is stored. And a central processing unit (9) for supplying.

In the central processing unit (9), in each of the plurality of projection exposure units (10-1 to 10-n), the projection optical system (18) in which the photosensitive substrate (14) has been exposed previously is used. -I) approaching the state of distortion,
This is to set the distortion state of the projection optical system (18-j) to be exposed this time. According to a second aspect of the present invention, there is provided an exposure apparatus (10-1) for exposing a substrate by projecting a mask pattern onto the substrate (14-1).
A projection exposure system for forming a plurality of layers on the substrate, wherein the layers are connected to the exposure apparatus, and for each layer formed on the substrate,
Has a management means (9) for managing information on the exposure apparatus that has performed the exposure processing , and
It includes layers before the previous layer. Claim 6
The present invention described above has a plurality of exposure apparatuses that expose a substrate by projecting a mask pattern onto the substrate (14-1), and the plurality of exposure apparatuses (10-1 to 10-
A projection exposure system for forming a plurality of layers on the substrate by using a n), is connected to the plurality of exposure apparatus, its
Management means (9) for collecting information from the plurality of exposure apparatuses and storing a history of information on the exposure apparatuses that have exposed each of the layers corresponding to the plurality of layers formed on the substrate;
It has. According to a twelfth aspect of the present invention, there is provided an exposure apparatus (10-1) for exposing a substrate by projecting a mask pattern onto the substrate (14-1).
And for each layer formed on the substrate, connected to management means (9) for managing information on a layer to be superimposed best, the layer to be superimposed best is a previous layer (9) including the previous layer and its management means
And control means (13-1) for controlling the exposure processing of the substrate based on the control information corresponding to the information on the layer desired to be superimposed . Also,
The present invention according to claim 14 is an exposure apparatus (10-1) for exposing a substrate by projecting a mask pattern on the substrate (14-1), wherein a plurality of exposure devices are formed on the substrate. A management means (9) for storing the history of the information on the exposure apparatus that has exposed each layer corresponding to the layer is connected together with the other exposure apparatus, and control information corresponding to the information on the exposure apparatus is transmitted from the management means. A control means (13-1) for controlling the exposure processing of the substrate based on the control information. The present invention according to claim 18 is an exposure method for exposing a substrate by projecting a mask pattern on the substrate, wherein the best superposition is performed for each layer formed on the substrate. The layer which is connected to the management means (9) for managing information about the layer to be superimposed and which is to perform the best superimposition includes the layer before the previous layer , and wants to perform the superimposition from the management means. The exposure processing of the substrate is controlled based on control information corresponding to the information on the layer. The present invention according to claim 19 is an exposure method for exposing a substrate by projecting a pattern of a mask on the substrate, wherein each of the layers corresponds to a plurality of layers formed on the substrate. Management means (9) for storing a history of information on the exposure apparatus that has performed the exposure processing is connected together with other exposure apparatuses, and performs exposure processing on the substrate based on control information corresponding to information on the exposure apparatus from the management means. To control. Further, the present invention according to claim 20 is a method for manufacturing a semiconductor device using the projection exposure system according to any one of claims 2 to 11, for manufacturing a semiconductor device. Is a method for manufacturing a semiconductor device using the exposure apparatus according to any one of claims 12 to 17, and the present invention according to claim 22 is the method according to claim 18 or 19. This is a method for manufacturing a semiconductor device in which a semiconductor device is manufactured using an exposure method.

[0012]

According to the present invention, for example, after the first mask pattern is exposed on the first layer of the photosensitive substrate (14) by the first projection exposure apparatus (10-1), the second projection exposure apparatus In the case where the second mask pattern related to the first mask pattern is exposed on the second layer of the photosensitive substrate (14) in (10-2), the central processing unit (9) uses the photosensitive substrate (14). Data indicating the distortion characteristics of the projection optical system (18-1) of the first projection exposure apparatus (10-1) when the first layer is exposed in (14) is collected. Next, the second projection exposure apparatus (10-2) performs the second exposure of the photosensitive substrate (14).
When exposing the layer, the central processing unit (9) changes the distortion characteristic of the projection optical system (18-2) of the second projection exposure apparatus (10-2) to the first projection exposure apparatus (10-1). )
, The distortion characteristics of the projection optical system (18-1) at the time of the exposure of the first layer are made as close as possible. afterwards,
By exposing the second layer of the photosensitive substrate (14) with the second projection exposure apparatus (10-2) under the distortion characteristics, the exposure pattern of the first layer of the photosensitive substrate (14) and the second layer are exposed. The best matching with the exposure pattern can be achieved.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a projection exposure system according to the present invention will be described below with reference to FIGS. In this example, n
The present invention is applied to a projection exposure system including two (n is an integer of 2 or more) step-and-repeat type reduction projection type exposure apparatuses (steppers).

FIG. 1 shows a projection exposure system according to the present embodiment. In FIG. 1, reference numeral 9 denotes a central control computer for centrally managing the entire exposure operation, and 10-1 to 10-n.
Are projection exposure apparatuses. Each projection exposure apparatus 10-
Although 1 to 10-n have basically the same configuration, the reduction ratio of the projection optical system, the maximum projection field of view, and the like may be different. The configuration of the first projection exposure apparatus 10-1 will be described.
First, reference numeral 11-1 denotes a reticle.
An actuator 12-1 for finely moving the reticle in the optical axis direction of the projection optical system 18-1 is arranged on the lower surface of the reticle, and the reticle 11-1 is finely moved in the optical axis direction in parallel by the actuator 12-1. Or, slightly tilt from a plane perpendicular to the optical axis. As a result, the state of the distortion (particularly, barrel type or pin wound type) of the projection optical system can be changed to some extent. A main controller 13-1 controls the operation of the projection exposure apparatus 10-1. The main controller 13-1 supplies a control signal for finely moving the reticle 11-1 to the actuator 12-1.

Reference numeral 14 denotes a wafer to be exposed, and the wafer 14 is mounted on a wafer stage 15-1. The wafer stage 15-1 includes an XY stage, a Z stage, a leveling stage, and the like. The wafer stage 15-1 is linearly moved by a driving motor 16-1 in one direction (referred to as X direction) in a plane perpendicular to the optical axis of the projection optical system, and is driven by a driving motor 17-1. It moves straight in the Y direction perpendicular to the X direction. By operating these motors 16-1 and 17-1 according to a control signal from the main controller 13-1, the wafer stage 15-1 can be moved to a desired position or stopped at a desired position. it can. Note that the coordinates of the wafer stage 15-1 are sequentially detected by a laser interference type length measuring device (not shown), and the main controller 13-1 transmits the position information detected thereby and the position information determined by design. And the wafer stage 15-1 is positioned.

A projection optical system 18-1 projects and exposes the pattern of the reticle 11-1 onto the wafer 15-1 by the projection optical system 18-1. Reference numeral 19-1 denotes a pressure regulator, and the pressure regulator 19-1 responds to a control signal from the main controller 13-1 to at least one of a plurality of lenses included in the projection optical system 18-1. Adjust the pressure in the air chamber. From the change in the refractive index depending on the change in the pressure of the gas, the projection magnification of the projection optical system 18-1 itself, and further, the state of the distortion is finely adjusted. The specific configuration of the pressure regulator is disclosed in, for example, JP-A-60-28613 and JP-A-60-78454. In addition,
In this example, the projection magnification of the projection optical system 18-1 is finely adjusted using a pressure adjuster. In addition, at least one of the plurality of lens groups (particularly, the reticle) of the projection optical system 18-1 is used. The distortion state and the projection magnification of the projection optical system 18-1 can also be finely adjusted by slightly moving the close lens group) in the optical axis direction or by inclining it with respect to a plane perpendicular to the optical axis.

Although not shown, the projection exposure apparatus 10-1 incorporates a measuring means for measuring the state of distortion of the projection optical system 18-1. The measuring means includes, for example, a light receiving sensor having a slit-shaped opening disposed on the upper surface of the wafer stage 15-1, and an arithmetic means for capturing the output signal of the light receiving sensor and the coordinates of the wafer stage 15-1. You. And reticle 1
In a state where a test reticle on which a pattern for distortion measurement is formed is set as 1-1, the pattern of the test reticle is projected onto a wafer stage 15-1, and this projected image and an ideal projected image in design are projected. Can be measured, the current actual distortion state of the projection optical system 18-1 can be measured. The distortion may be measured by any method. For example, Japanese Patent Application Laid-Open No. 59-940
No. 32 discloses this.

In addition to the actual measurement, the current distortion state may be predicted by a predictive control method. That is, when the projection exposure apparatus 10-1 is previously assembled and adjusted, a control signal supplied to the actuator 12-1 and a control signal supplied to the pressure regulator 19-1 are measured using another distortion measuring device. By examining how the state of distortion of the projection exposure apparatus 18-1 changes, a table of the correspondence between these control signals and the state of distortion is stored in the main controller 13-1.
Is stored in a data file inside the. After that,
The main controller 13-1 is connected to the current actuator 12-1.
And the state of the pressure adjuster 19-1, the actual state of distortion of the projection exposure apparatus 18-1 can be accurately predicted.

Since the projection exposure apparatus 10-1 is configured as described above, the current state of the distortion of the projection optical system 18-1 can be automatically measured or predicted, and the state of the distortion can be measured. The correction can be made automatically within a certain range. In this case, the central control computer 9 can obtain the information indicating the current distortion state of the projection optical system 18-1 from the main control device 13-1 of the projection exposure apparatus 10-1 at any time. Information indicating a correction amount of distortion of the projection optical system 18-1 with respect to the wafer 14 to be exposed next is supplied to 13-1.

The other projection exposure apparatuses 10-2 to 10-n have basically the same configuration as the first projection exposure apparatus 10-1. Then, the central control computer 9 also obtains information indicating the state of distortion of the internal projection optical system (18-i) (i = 2 to n) for the other projection exposure apparatuses 10-2 to 10-n. At the same time, information for instructing the amount of distortion correction of the projection optical system (18-i) with respect to the wafer to be exposed next is supplied to the internal main controller (13-i).

The central control computer 9 has a data file for exposure. The data file contains the wafers of each lot to be exposed when and which projection exposure apparatus is used for the exposure of the previous layer (layer). 10-1 to 10-n
A history indicating whether the exposure processing has been performed is recorded. Then, the central control computer 9 omits, for example, in units of lots, information indicating which layer of the wafer to be exposed next should be superimposed (matching) on which layer has already been exposed. Received from an external lot management system. However, instead of the central management computer 9 having the exposure data file itself, the external lot management system may store the above exposure data file.

Next, the operation of the projection exposure system of FIG. 1 for exposing a wafer of a certain lot will be described with reference to FIG. The exposure processing is performed by the first projection exposure apparatus 10
-1. First, after the processing is started from step 101 in FIG. 2, in step 102, the central control computer 9 in FIG. 1 uses the lot identification number (lot ID) of the lot in which the wafer to be exposed is stored as an exposure data file. To find the history of previous exposures for that lot. In this case, the layer on which the best overlay is to be performed on the layer to be exposed this time is not necessarily the layer before that layer, and the information is input from, for example, an external lot management system.

If the input information indicates, for example, two layers before the current layer, the central management computer 9
Searches the internal exposure data file and specifies the projection exposure apparatus and date and time that exposed the layer two layers before.
Assuming that the specified projection exposure apparatus is, for example, the second projection exposure apparatus 10-2, the central control computer 9 further executes the second projection exposure apparatus 10-2 when performing the exposure two layers earlier. Is obtained as a distortion value DA (i-1). The distortion value DA (i-1) includes, for example, a deviation of the projection magnification at a plurality of measurement points from a design value.

Next, at step 103, the central control computer 9 sets the current distortion value DB (i-) of the first projection exposure apparatus 10-1 which performs the current exposure.
Receive the information of 1). Then, in step 104, the central control computer 9 calculates the difference between the current distortion value of the first projection exposure apparatus 10-1 and the distortion value DA (i-1) of the second projection exposure apparatus 10-2. The distortion control parameters obtained by, for example, the least squares approximation method are supplied to the first projection exposure apparatus 10-1 so as to minimize the distortion control parameters. After this correction, in step 105, the central control computer 9 receives the information of the distortion value DB (i) of the first projection exposure apparatus 10-1 at the time of the current exposure, and records this in the exposure data file. This distortion value DB (i) is used as lot information at the time of subsequent exposure. Then, in step 106, the wafer is exposed by the first projection exposure apparatus 10-1 in which the distortion has been corrected as described above.

As described above, according to this embodiment, when a plurality of projection exposure apparatuses 10-1 to 10-n are mixed, the distortion state of the projection exposure apparatus 10-1 to be exposed this time is changed to the current exposure. The distortion is brought as close as possible to the state of the distortion of the projection exposure apparatus 10-2 in which the exposure of the layer two layers before the layer related to the layer of the wafer 14 has been performed. Therefore, since distortion management may be performed by focusing only on the two target projection exposure apparatuses, distortion matching is performed easily and with high accuracy.

Next, another example of distortion correction in step 104 will be described. In this case, first, as shown in FIG. 3, the image of each lattice point of the projected image corresponding to the distortion value DA (i-1) of the second projection exposure apparatus 10-2 that has performed the exposure two layers earlier is shown in FIG. 3 is represented by a solid-line grid pattern 20. In FIG. 3, contour 1
Indicates the outline of the ideal image, and frames 2 to 5 indicate allowable ranges of distortion at the four corners of the ideal image, respectively. The distortion of the lattice pattern 20 is an allowable range for the ideal image, but the right side is narrower. In practice, distortion is evaluated at many more points.

Next, correction frames 21 to 24 indicated by broken lines are set at the four corners of the grid pattern 20.
Each of the correction frames 21 to 24 is a frame centered on each vertex of the four corners of the lattice pattern, and each of the correction frames 21 to 24 is smaller than each of the frames 2 to 5 indicating an allowable range. In this case, for example, regarding the upper left correction frame 21, the correction frame 2
1A and a frame 2 showing an allowable range are overlapped with a hatched area (referred to as an “adjustment range”) 2A. Set the allowable setting range. Similarly, the correction frames 22 to
24 and the frames 3 to 5 indicating the permissible range respectively overlap the ranges 3A to 5A as the adjustment range.
The distortion of the projected image of -1 is adjusted to the adjustment range 2
A to 5A.

As a result, the contour of the projected image corresponding to the corrected distortion value DB (i) of the first projection exposure apparatus 10-1 to be exposed this time becomes, for example, a solid line contour 25 in FIG. The vertices of the four corners of the outline 25 fall within the shaded adjustment frames 2A to 5A, respectively. By performing such a correction, the state of the distortion falls within the allowable range for the ideal image, and the matching of the distortion of the layer two layers ahead is also improved. In the present embodiment, the projection magnification can be corrected in the same manner as the distortion as well as the distortion. The same effect can be obtained by applying the present invention to matching between two exposure apparatuses having different types of optical systems, for example, each including a refractive optical system and a reflective optical system. . As described above, the present invention is not limited to the above-described embodiment, and can take various configurations without departing from the gist of the present invention.

[0029]

According to the present invention, the distortion state of the projection optical system to be exposed this time is set so that the photosensitive substrate approaches the distortion state of the projection optical system previously exposed. Even when there are many projection exposure devices,
There is an advantage that distortion matching can be performed easily and with high accuracy only by correcting distortion by focusing on two projection exposure apparatuses. Also, the layers you want to overlap
The best superposition can be performed for

[Brief description of the drawings]

FIG. 1 is a block diagram including a partial perspective view showing a projection exposure system according to an embodiment of the present invention.

FIG. 2 is a flowchart illustrating an example of a distortion correction operation according to the embodiment.

FIG. 3 shows another example of the distortion correction operation.
FIG. 3 is a diagram showing a state of distortion of a projection exposure apparatus which has been exposed previously.

FIG. 4 shows another example of a distortion correction operation.
FIG. 7 is a diagram illustrating a distortion state after correction of a projection exposure apparatus that performs exposure this time.

FIG. 5 is a diagram showing a state of distortion of a conventional projection exposure apparatus.

[Explanation of symbols]

 9 Centralized management computer 10-1 to 10-n Projection exposure apparatus 11-1 Reticle 12-1 Actuator 13-1 Main controller 14 Wafer 15-1 Wafer stage 18-1 Projection optical system 19-1 Pressure controller

Claims (22)

(57) [Claims] 1. A projection optical system for exposing an image of a mask pattern onto a photosensitive substrate, a distortion measuring means for predicting or measuring distortion of the projection optical system, and a distortion measuring device for correcting the distortion of the projection optical system by external control information. have a correction means for correcting the state respectively, the indicating a plurality of projection exposure apparatus for sequentially forming a plurality of layers on a photosensitive substrate, the respective states of the distortion of the projection optical system of the plurality of projection exposure apparatus data were collected and shape on the photosensitive substrate
Projection exposure obtained by exposing each layer to a plurality of layers to be formed
A central processing unit that stores a history of information of the optical device and supplies control information for individually instructing a state of distortion of the projection optical system to the plurality of projection exposure apparatuses; In each of the plurality of projection exposure apparatuses, the distortion state of the projection optical system to be exposed this time is set so that the photosensitive substrate approaches the distortion state of the projection optical system previously exposed. Projection exposure system. 2. A projection exposure system for exposing the substrate by projecting a pattern of a mask onto the substrate, the projection exposure system forming a plurality of layers on the substrate, the projection exposure system being connected to the exposure device. For each layer formed on the substrate, a layer to be subjected to the best superposition was exposed to light.
A projection exposure system comprising management means for managing information of an exposure apparatus , wherein the layer on which the best superposition is to be performed includes a layer earlier than a previous layer. 3. The exposure apparatus according to claim 1, wherein the exposure apparatus performs an exposure process on the substrate.
The projection exposure system according to claim 2, wherein information on the exposure apparatus at the time of the transmission is transmitted to the management unit . 4. The management means performs an exposure process on the next layer to be formed based on information on an exposure apparatus that has performed an exposure process on a layer on which a layer to be next best formed on the substrate is to be superimposed. 4. The projection exposure system according to claim 2 , wherein control information is supplied to the exposure apparatus. 5. The projection exposure system according to claim 2, further comprising a plurality of exposure apparatuses, wherein the management unit is connected to the plurality of exposure apparatuses. 6. An exposure apparatus for exposing the substrate by projecting a mask pattern on the substrate,
A projection exposure system for forming a plurality of layers on the substrate using the plurality of exposure apparatuses, the projection exposure system being connected to the plurality of exposure apparatuses, and being connected to the plurality of exposure apparatuses.
A projection exposure system comprising a management unit that collects such information and stores a history of information of an exposure apparatus that has exposed each of the layers corresponding to a plurality of layers formed on the substrate. 7. The management means performs an exposure process on the next layer to be formed based on information on an exposure apparatus that has performed an exposure process on a layer on which the next layer to be formed on the substrate is to be best superimposed. The projection exposure system according to claim 6, wherein control information is supplied to the exposure apparatus. 8. The projection exposure system according to claim 6, wherein a layer to be best superimposed on a layer to be formed next on the substrate includes a layer before a previous layer. . 9. information of the exposure apparatus, when performing the exposure processing of the respective layers, any one of claims 2-8, characterized in that it comprises the imaging characteristics of an exposure apparatus that has performed the said exposure process A projection exposure system according to claim 1. 10. An exposure apparatus that performs an exposure process on the next layer performs matching with an imaging characteristic of an exposure apparatus that has performed an exposure process on the layer to be superimposed based on control information from the management unit. 10. The projection exposure system according to claim 9, wherein: 11. The projection exposure system according to claim 2, wherein the management unit manages information on the exposure apparatus in units of lots composed of a plurality of substrates. . 12. An exposure apparatus for exposing the substrate by projecting a mask pattern onto the substrate, wherein information on layers desired to be superimposed is managed for each layer formed on the substrate. The layer desired to be superimposed includes a layer prior to the previous layer, and the best superimposition from the supervising means.
Exposure apparatus characterized by comprising control means for controlling the exposure process of the substrate on the basis of the control information corresponding to the information about the layer you want to Align. 13. The information on the layer on which the best overlay is to be performed is information on an exposure apparatus that has performed exposure processing on the layer on which the best overlay is to be performed. 13. The exposure apparatus according to claim 12, wherein information on the exposure apparatus is sent to the management unit. 14. An exposure apparatus for exposing the substrate by projecting a mask pattern on the substrate, the exposure apparatus performing exposure processing on each of the layers corresponding to a plurality of layers formed on the substrate. Control means connected to the management means for storing the history of information together with another exposure apparatus and controlling the exposure processing of the substrate based on control information from the management means corresponding to the information on the exposure apparatus. Exposure apparatus. 15. The control means sends information of an exposure apparatus when the substrate is subjected to the exposure processing to the management means, and the control information from the management means is the best for the next layer to be formed on the substrate. 17. The exposure apparatus according to claim 16, wherein the information corresponds to information of an exposure apparatus that has exposed a layer to be overlapped. 16. The exposure apparatus according to claim 14, wherein a layer desired to be superimposed on a layer to be formed next on the substrate includes a layer before a previous layer. 17. The exposure apparatus according to claim 13, wherein the information on the exposure apparatus includes an image forming characteristic of the exposure apparatus that has performed the exposure processing when performing the exposure processing on each of the layers. The exposure apparatus according to claim 1. 18. An exposure method for exposing the substrate by projecting a mask pattern onto the substrate, wherein information on a layer desired to be superimposed is managed for each layer formed on the substrate. The layer desired to be superimposed includes a layer prior to the previous layer, and the best superimposition from the supervising means.
Exposure method characterized by controlling the exposure process of the substrate on the basis of the control information corresponding to the information about the layer you want to Align. 19. An exposure method for exposing the substrate by projecting a mask pattern onto the substrate, the exposure method comprising exposing each layer to a plurality of layers formed on the substrate. An exposure method which is connected to a management unit for storing a history of information together with another exposure apparatus, and controls an exposure process of the substrate based on control information from the management unit in accordance with information on the exposure apparatus. . 20. A method for manufacturing a semiconductor device, comprising manufacturing a semiconductor device using the projection exposure system according to claim 2. Description: 21. A method for manufacturing a semiconductor device, comprising manufacturing a semiconductor device using the exposure apparatus according to claim 12. 22. A method for manufacturing a semiconductor device, comprising manufacturing a semiconductor device using the exposure method according to claim 18.