JP3233042B2 - Plasma processing method and apparatus - Google Patents
Plasma processing method and apparatusInfo
- Publication number
- JP3233042B2 JP3233042B2 JP24444996A JP24444996A JP3233042B2 JP 3233042 B2 JP3233042 B2 JP 3233042B2 JP 24444996 A JP24444996 A JP 24444996A JP 24444996 A JP24444996 A JP 24444996A JP 3233042 B2 JP3233042 B2 JP 3233042B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- processing
- microwave
- gas
- flow path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、プラズマ処理方法
及び装置に係り、特に半導体基板等のエッチング、なら
びにデポジションに好適なプラズマ処理方法及び装置に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing method and apparatus, and more particularly to a plasma processing method and apparatus suitable for etching a semiconductor substrate or the like and for deposition.
【０００２】[0002]
【従来の技術】従来の装置は特開昭５９ー１０３３４０
号記載のように放電管の周囲を取り囲んで取り付けた導
波管の他端にマグネトロンを設け、放電管の開口部に反
射円盤あるいは反射円筒を設けて、マグネトロンからの
マイクロ波を反射させて放電管内で効率良くプラズマを
発生させるようになっていた。2. Description of the Related Art A conventional apparatus is disclosed in JP-A-59-103340.
A magnetron is provided at the other end of the waveguide mounted around the periphery of the discharge tube as described in the reference, and a reflective disk or cylinder is provided at the opening of the discharge tube to reflect microwaves from the magnetron and discharge. The plasma was generated efficiently in the tube.
【０００３】[0003]
【発明が解決しようとする課題】従来技術の場合、処理
用ガスの量を増加させても処理速度が増加しないため、
被処理体の大型化にともない、処理能力が低下するとい
う問題があった。実験の結果、プラズマがマイクロ波導
入窓の直近（数ｍｍ）に発生し、処理室への処理用ガス
導入においてプラズマ発生部へのガス供給が不十分であ
ることが判った。このため、処理用ガスを増加させても
励起されにくく、ラジカル発生量の増加が少ないという
ことが判明した。In the prior art, the processing speed does not increase even if the amount of the processing gas is increased.
There is a problem that the processing capacity is reduced as the size of the object increases. As a result of the experiment, it was found that plasma was generated in the immediate vicinity (several mm) of the microwave introduction window, and that the supply of gas to the plasma generation unit was insufficient when introducing the processing gas into the processing chamber. For this reason, it was found that even if the processing gas was increased, it was hardly excited, and the increase in the amount of generated radicals was small.
【０００４】本発明は被処理体を速くしかも均一に処理
することのできるプラズマ処理方法及び装置を提供する
ことにある。An object of the present invention is to provide a plasma processing method and apparatus capable of processing an object to be processed quickly and uniformly.
【０００５】[0005]
【課題を解決するための手段】減圧状態にて処理用ガス
を導入し、マイクロ波にて処理用ガスをプラズマ化さ
せ、そのプラズマからのラジカルまたはイオンにより被
処理体の表面を処理するプラズマ処理方法において、マ
イクロ波導入窓と多数の穴を有するマイクロ波反射端と
の間にガス流路形成材を設け、マイクロ波導入窓とガス
流路形成材によって囲まれた空間に処理用ガスを導入
し、その空間にプラズマを発生させることにより達成す
る。Means for Solving the Problems Plasma processing in which a processing gas is introduced under reduced pressure, the processing gas is turned into plasma by microwaves, and the surface of the processing object is processed with radicals or ions from the plasma. in the process, Ma
Microwave introduction window and microwave reflecting end with many holes
This is achieved by providing a gas flow path forming material between them, introducing a processing gas into a space surrounded by the microwave introduction window and the gas flow path forming material, and generating plasma in the space.
【０００６】[0006]
【発明の実施の形態】図１にプラズマ処理装置であるマ
イクロ波プラズマアッシング処理装置の処理室内縦断面
図を示す。上部導波管１より導入されたマイクロ波は導
波管１と反射端５の間で高周波電界分布を発生し石英窓
２を通過して下部導波管に導入され、そこで処理ガス導
入口３より導入された処理用ガスをプラズマ化させる。
ここで、上部導波管１には、石英窓２に所望の高周波電
界分布を通過させるためのスロットアンテナ１１を設け
た構造となっている。プラズマ発生部に効率よく処理ガ
スを導入するために、下部導波管９には石英板（ガス流
路形成材）４を設けてある。そこでプラズマ化された処
理用ガスは下方に流れ、多数の穴を設けた反射端５を通
過して被処理体表面へのラジカルの到達分布が均一とな
るように整えられ、処理室１０に導入される。導入され
たラジカルは試料に到達し、試料６の処理を行う。処理
を終わったガスは排気される。処理室１０は図示を省略
した排気系にて所定の圧力に減圧されている。処理ガス
導入口より導入される処理用ガスは、図示を省略した流
量系にて流量制御されている。試料台７をヒータ８によ
って所定の温度に加熱することにより、その上に設置さ
れた試料６を温調している。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a longitudinal sectional view of a processing chamber of a microwave plasma ashing processing apparatus which is a plasma processing apparatus. The microwave introduced from the upper waveguide 1 generates a high-frequency electric field distribution between the waveguide 1 and the reflection end 5 and passes through the quartz window 2 to be introduced into the lower waveguide, where the processing gas inlet 3 is provided. The introduced processing gas is turned into plasma.
Here, the upper waveguide 1 has a structure in which a slot antenna 11 for passing a desired high-frequency electric field distribution through the quartz window 2 is provided. In order to efficiently introduce a processing gas into the plasma generating section, a quartz plate (gas flow path forming material) 4 is provided in the lower waveguide 9. Then, the processing gas converted into plasma flows downward, passes through the reflection end 5 provided with a number of holes, is adjusted so that the distribution of the arrival of radicals on the surface of the processing object becomes uniform, and is introduced into the processing chamber 10. Is done. The introduced radicals reach the sample, and the sample 6 is processed. The gas after the treatment is exhausted. The processing chamber 10 is depressurized to a predetermined pressure by an exhaust system not shown. The flow rate of the processing gas introduced from the processing gas inlet is controlled by a flow system (not shown). By heating the sample stage 7 to a predetermined temperature by the heater 8, the temperature of the sample 6 placed thereon is adjusted.
【０００７】図２に図１の構造でウエハ上のレジストを
酸素とＣＦ４の混合ガスにてアッシングした例を示す。
従来の構造に対し処理用ガスの導入方向に延びた石英板
（ガス流路形成材）４を入れることにより、処理ガス流
量の増加に伴いアッシングレートが約２．５倍に増加で
きている。また、石英板（ガス流路形成材）４の材質は
石英以外の材質であるアルミナセラミック等でも同様の
結果が得られている。従来構造を図３に示す。他の実施
例を図４に示す。図４では、ガス流路形成材４がプラズ
マを下部導波管９に拡散する複数の穴を有する構造とな
っていることが図１の実施例と異なる。図４の構造でも
同様の結果が得られている。FIG. 2 shows an example in which the resist on the wafer is ashed by a mixed gas of oxygen and CF4 in the structure of FIG.
By inserting a quartz plate (gas flow path forming material) 4 extending in the introduction direction of the processing gas into the conventional structure, the ashing rate can be increased by about 2.5 times as the flow rate of the processing gas increases. Similar results are obtained when the quartz plate (gas flow path forming material) 4 is made of a material other than quartz, such as alumina ceramic. FIG. 3 shows a conventional structure. Another embodiment is shown in FIG. FIG. 4 differs from the embodiment of FIG. 1 in that the gas flow path forming material 4 has a structure having a plurality of holes for diffusing plasma into the lower waveguide 9. Similar results are obtained with the structure of FIG.
【０００８】[0008]
【発明の効果】本発明によれば、処理用ガスがプラズマ
発生部を通過する構造とすることにより、被処理体を速
く処理することができ、処理能力が向上する。According to the present invention, an object to be processed can be processed quickly, and the processing capacity can be improved by employing a structure in which the processing gas passes through the plasma generating section.
【図１】本発明の実施例であるマイクロ波プラズマアッ
シング処理装置のアッシング室の縦断面図。FIG. 1 is a longitudinal sectional view of an ashing chamber of a microwave plasma ashing processing apparatus according to an embodiment of the present invention.
【図２】図１に装置において、処理ガスとしてＯ２／Ｃ
Ｆ４を用いたときに得られたアッシング状態を示す図。FIG. 2 shows an apparatus in which O2 / C is used as a processing gas in the apparatus shown in FIG.
The figure which shows the ashing state obtained when using F4.
【図３】従来のマイクロ波プラズマアッシング処理装置
におけるアッシング室の縦断面図。FIG. 3 is a longitudinal sectional view of an ashing chamber in a conventional microwave plasma ashing processing apparatus.
【図４】本発明の他の実施例であるマイクロ波プラズマ
アッシング処理装置のアッシング室の縦断面図。FIG. 4 is a longitudinal sectional view of an ashing chamber of a microwave plasma ashing processing apparatus according to another embodiment of the present invention.
１…上部導波管、２…石英窓、３…処理ガス導入口、４
…石英板（ガス流路形成材）、５…反射端、６…試料、
７…試料台、８…ヒータ、９…下部導波管、１０…処理
室、１１…スロットアンテナ。DESCRIPTION OF SYMBOLS 1 ... Upper waveguide, 2 ... Quartz window, 3 ... Processing gas inlet, 4
... Quartz plate (gas flow path forming material), 5 ... Reflection end, 6 ... Sample,
7: sample stage, 8: heater, 9: lower waveguide, 10: processing chamber, 11: slot antenna.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０１Ｌ 21/205 Ｈ０１Ｌ 21/30 ５７２Ａ 21/3065 21/302 Ｈ (72)発明者 角屋 誠浩 山口県下松市大字東豊井794番地 株式 会社 日立製作所 笠戸工場内 (72)発明者 渡辺 成一 山口県下松市大字東豊井794番地 株式 会社 日立製作所 笠戸工場内 (56)参考文献 特開 平１−135095（ＪＰ，Ａ) 特開 平７−335394（ＪＰ，Ａ) 特開 平９−111461（ＪＰ，Ａ) 特開 平５−275397（ＪＰ，Ａ) 特開 平６−104224（ＪＰ，Ａ) 特開 平６−163466（ＪＰ，Ａ) 特開 平６−267910（ＪＰ，Ａ) 特開 平６−345527（ＪＰ，Ａ) 特開 平７−161490（ＪＰ，Ａ) 特開 平７−272897（ＪＰ，Ａ) 特開 平７−335393（ＪＰ，Ａ) 実開 平６−54300（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H05H 1/46 C23C 16/50 C23F 4/00 H01L 21/3065 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI H01L 21/205 H01L 21/30 572A 21/3065 21/302 H (72) Inventor Masahiro Kadoya 794, Higashitoyoi, Katsumatsu-shi, Yamaguchi Prefecture Address: Hitachi, Ltd., Kasado Factory (72) Inventor: Seiichi Watanabe, 794, Higashi-Toyoi, Kazamatsu-shi, Yamaguchi Prefecture Hitachi, Ltd., Kasado Factory (56) References JP-A 1-135095 (JP, A) JP-A-7-335394 (JP, A) JP-A-9-111461 (JP, A) JP-A-5-2755397 (JP, A) JP-A-6-104224 (JP, A) JP-A-6-163466 ( JP, A) JP-A-6-267910 (JP, A) JP-A-6-345527 (JP, A) JP-A-7-161490 (JP, A) JP-A-7-272897 (JP, A) JP Hei 7-335393 (JP, A) Actual opening Hei 6-54300 ( P, U) (58) investigated the field (Int.Cl. 7, DB name) H05H 1/46 C23C 16/50 C23F 4/00 H01L 21/3065
Claims (3)
ロ波にて前記処理用ガスをプラズマ化させ、前記プラズ
マからのラジカルまたはイオンにより被処理体の表面を
処理するプラズマ処理方法において、マイクロ波導入窓
と多数の穴を有するマイクロ波反射端との間にガス流路
形成材を設け、前記マイクロ波導入窓と前記ガス流路形
成材によって囲まれた空間に前記処理用ガスを導入し、
前記空間にプラズマを発生させることを特徴とするプラ
ズマ処理方法。In a plasma processing method, a processing gas is introduced under reduced pressure, the processing gas is turned into plasma by microwaves, and the surface of the processing object is processed by radicals or ions from the plasma. Microwave introduction window
Gas flow path between the microwave reflecting end having a large number of holes
A forming material is provided, and the microwave introduction window and the gas flow path shape are provided.
The processing gas is introduced in a space surrounded by Naruzai,
A plasma processing method comprising generating plasma in the space.
と、マイクロ波導入窓と多数の穴を有するマイクロ波反
射端との間の空間にマイクロ波を導入し前記処理用ガス
をプラズマ化する手段とを有するプラズマ処理装置にお
いて、前記マイクロ波導入窓と前記マイクロ波反射端と
の間にガス流路形成材を設け、前記マイクロ波導入窓と
前記ガス流路形成材との間に前記処理用ガスを導入しプ
ラズマ化する空間を設けたことを特徴とするプラズマ処
理装置。2. A means for introducing a processing gas under reduced pressure , a microwave counter having a microwave introduction window and a number of holes.
Means for introducing a microwave into the space between the launch end and converting the processing gas into plasma, wherein the microwave introduction window and the microwave reflection end
A gas flow path forming material is provided between the microwave introduction window and
The processing gas is introduced between the gas flow path forming material and
A plasma processing apparatus having a space for plasma.
英またはアルミナセラミックから成ることを特徴とする
プラズマ処理装置。3. A plasma processing apparatus according to claim 2, wherein said gas flow path forming material is made of quartz or alumina ceramic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24444996A JP3233042B2 (en) | 1996-09-17 | 1996-09-17 | Plasma processing method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24444996A JP3233042B2 (en) | 1996-09-17 | 1996-09-17 | Plasma processing method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1092597A JPH1092597A (en) | 1998-04-10 |
| JP3233042B2 true JP3233042B2 (en) | 2001-11-26 |
Family
ID=17118826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24444996A Expired - Fee Related JP3233042B2 (en) | 1996-09-17 | 1996-09-17 | Plasma processing method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3233042B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6910440B2 (en) | 2000-03-30 | 2005-06-28 | Tokyo Electron Ltd. | Apparatus for plasma processing |
-
1996
- 1996-09-17 JP JP24444996A patent/JP3233042B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1092597A (en) | 1998-04-10 |
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