JP3230891B2 - Coating device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a coating apparatus for applying a chemical solution or the like to the surface of a predetermined object, and more particularly, to a coating apparatus used in a semiconductor manufacturing process for applying a chemical solution to a wafer surface to make a uniform film thickness. The present invention relates to a coating device that achieves flattening.

[0002]

2. Description of the Related Art Conventionally, in the technique of coating a thin film on a wafer,
In general, a spin coating method is used. FIG. 6 shows a configuration diagram of a conventional coating apparatus.

In this conventional coating apparatus, a chemical solution is applied to the surface of the wafer 2 as follows.

[0004] First, as shown in FIG.
The chemical solution 3 to be applied is placed on the wafer 2 fixed by 1 and the wafer 2 is rotated by the spin motor 7,
The chemical solution 3 on the wafer 2 is spun (spun by centrifugal force) to form a thin film 4 ′ of the chemical solution 3. FIG. 7 is a sectional view of the wafer 2 and the thin film 4 ′ formed by the chemical solution 3 at this time.
This is shown in (1).

Next, the thin film 4 ′ is etched back by the chemical 3. By repeating these operations, the interlayer film on the pattern is planarized. FIG. 7 is a sectional view of the final wafer 2 and the formed resist 4.
This is shown in (2).

[0006]

However, in a conventional spin coating type coating apparatus, (1) the 90
[%] Or more is removed by spinning, resulting in poor material usage efficiency. (2) The etch back process is required to planarize the interlayer film, complicating the semiconductor manufacturing process. there were.

The present invention solves the above problems,
An object of the present invention is to provide a coating apparatus in which a chemical solution film thickness is made uniform in a process of applying a chemical solution on a wafer surface in a semiconductor manufacturing process and a planarization process for planarizing an interlayer film is reduced. is there.

[0008]

In order to achieve the above-mentioned object, a means for solving the problem is that a wafer to be coated is installed and starts to rotate, and the wafer rotates at a constant speed from a stopped state. In any of the acceleration state reaching the constant velocity state, the constant velocity state rotating at the constant velocity, and the deceleration state from the constant velocity state to the stop state, the centrifugal force applied to the chemical applied on the wafer, The installation means for supporting the wafer vertically and horizontally so that the resultant force of gravity and acceleration force always acts on the surface of the wafer in the vertical direction, and the installation means for installing the wafer; And a rotation drive means for rotating the coating device in the direction of.

According to a second feature of the present invention, in the coating apparatus according to the first aspect, the installation unit includes a rotating arm 8 rotated by the rotation driving unit 7 and the wafer 2.
And a connecting means 6 for connecting the rotating arm 8 and the free arm 9 to each other so as to have an arbitrary angle in an arbitrary direction.

A third feature of the present invention is that, in the coating apparatus according to the first or second aspect, as shown in FIG. 1, the rotation axis R of the rotation drive unit 7 is in the same direction as the gravity M1. That is.

A fourth feature of the present invention is that, in the coating apparatus according to the first or second aspect, as shown in FIG. 2, the rotation axis R of the rotation drive unit 7 is perpendicular to the gravity M1. It is a direction.

A fifth feature of the present invention is that
In the coating apparatus according to 3 or 4, as shown in FIG. 1, the installation unit is mounted on the free arm 9, and the wafer 2 is mounted so that airflow on the wafer 2 is not disturbed. Case 5 is provided.

A sixth feature of the present invention is that, in the coating apparatus according to the fifth aspect, a predetermined solvent is injected into the case 11 as shown in FIG.

Further, a seventh feature of the present invention is that
In the coating apparatus described in 3, 4, 5, or 6, FIG.
As shown in (2), the installation means includes a second rotation drive unit 21 that rotates the portion of the free arm 9 on which the wafer 2 is mounted or the case 5 ′ in a predetermined direction.

Further, an eighth feature of the present invention is that
The coating apparatus according to 2, 3, 4, 5, or 7,
The application device is installed in the predetermined solvent.

Furthermore, a ninth feature of the present invention is that
The coating apparatus according to 2, 3, 4, 5, or 7,
As shown in FIG. 4, the coating device includes a container 15 that surrounds the installation unit and is rotated by the rotation driving unit 7, and a predetermined solvent is injected into the container 15.

[0017]

In the coating apparatus according to the first, second, third and fourth aspects of the present invention, as shown in FIGS. 1 and 2, a wafer 2 to be coated is set on a setting means and rotated. The setting means is rotated by the unit 7 in a predetermined direction. For example, the rotation arm 8 rotated by the rotation drive unit 7 and the free arm 9 on which the wafer 2 is placed are connected to each other by the connection means 6 so as to have an arbitrary angle in an arbitrary direction. The resultant force G of the centrifugal force M2, the gravitational force M1, and the acceleration force M3 applied to the chemical solution 3 always acts in a direction perpendicular to the surface of the wafer 2. The rotation of the rotation drive unit 7 is
The rotation is performed with the rotation axis R in the same direction as the gravity M1 or in a direction perpendicular to the gravity M1.

As a result, in the step of applying the chemical solution 3 on the wafer surface in the semiconductor manufacturing process, the chemical solution 3 is applied with a force in a direction perpendicular to the surface of the wafer 2, and the thickness of the chemical solution can be made uniform. Since it is not necessary to fly the chemical 3, the cost can be reduced by reducing the amount of the chemical,
Further, the yield can be improved. In addition, since the coating process can be performed without performing a planarizing process for planarizing an interlayer film as in the related art, the number of processes can be reduced. Further, even for a high-viscosity chemical solution, the chemical solution 3 spreads over even the fine concave portions and can be flattened, thereby facilitating a process that has been difficult so far.

Further, in the coating apparatus according to the fifth and sixth aspects of the present invention, as shown in FIGS. 1 and 3, the coating apparatus according to the second, third, and fourth aspects is provided on the free arm 9 as shown in FIGS. The case 5 or 11 is placed, and the wafer 2 is placed in the case 5 or 11 so that the air flow on the wafer 2 is not disturbed. Thereby, the coating process can be performed in a stable state, and the film thickness of the chemical solution can be made more uniform. Further, a more stable state can be realized by injecting a predetermined solvent, for example, a thinner or the like into the case 5 or 11 so that the inside of the case 5 or 11 has a constant concentration.

In the coating apparatus according to the seventh aspect of the present invention, the coating apparatus according to the second, third, fourth, fifth and sixth aspects further comprises a free arm 9 as shown in FIG. By providing the second rotation drive unit 21 for rotating the portion on which the wafer 2 is placed or the case 5 'in a predetermined direction in the installation means, the film thickness of the chemical solution can be further reduced and uniformized.

In the coating apparatus according to the eighth and ninth features of the present invention, the coating apparatus according to the first, second, third, fourth, fifth and seventh features may be configured such that (For example, a thinner), the atmosphere around the wafer 2 can be made more stable, and the yield can be improved by making the chemical liquid film thickness uniform. Alternatively, as shown in FIG. 4, the same effect can be obtained by wrapping the installation means and including a container 15 rotated by the rotation drive unit 7 and injecting a predetermined solvent into the container 15.

[0022]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1A shows a configuration diagram of a coating apparatus according to a first embodiment of the present invention.

The coating apparatus of the present embodiment is an embodiment relating to the coating apparatus of the first, second, third, and fifth features of the present invention. A spin motor (rotation drive unit) 7 for rotating the installation means in a predetermined direction.

The setting means includes a rotating arm 8 rotated by a spin motor 7, a self-aligning arm (free arm) 9 on which the wafer 2 is mounted, a rotating arm 8 and a self-aligning arm 9, which can be moved in any direction. It is provided with a free joint (connection means) 6 for connecting at an arbitrary angle, and a windproof wafer case 5 mounted on the self-aligning arm 9 and mounting the wafer 2 therein.

The windproof wafer case 5 is for preventing the air flow on the wafer 2 from being disturbed, and the weight under the free joint 6 is adjusted equally to the left and right to prevent the center runout during rotation. I have.

The installation means comprises a centrifugal force M2, a gravitational force M1, and an acceleration force M3 applied to the wafer 2 by the mechanism of the rotating arm 8, the self-aligning arm 9, and the free joint 6.
The wafer 2 is set so that the surface of the wafer 2 is always perpendicular to the resultant force G.

Hereinafter, a coating process by the coating apparatus of the present embodiment will be described with reference to FIG.

First, the wafer 2 on which the chemical solution 3 is mounted is placed in the windproof wafer case 5 in a stationary state (a state in which the spin motor 7 is stopped). At this time, the centrifugal force M2 and the acceleration force M3 are both zero, and only the gravitational force M1 is applied to the chemical solution 3 on the wafer 2, and the coating apparatus is in a state as shown in FIG.

Next, when the spin motor 7 is started and the rotary arm 8 is rotated about the rotation axis R, the self-aligning arm 9 is lifted by the centrifugal force. FIG.
FIG. 2B is a cross-sectional view illustrating a state in which the installation unit is performing a constant speed motion by the rotation of the spin motor 7. In this constant velocity state, the acceleration force M3 = 0, and therefore, as shown at the right end in FIG. 1 (2), the resultant force G acting on the drug solution 3 is the centrifugal force M
2 and the resultant vector of gravity M 1, and the resultant G acts in a direction perpendicular to the surface of the wafer 2.

As shown in FIG. 1 (3), in the acceleration state in which the vehicle reaches the constant velocity state and in the deceleration state in which the vehicle moves from the constant velocity state to the stop state, the acceleration force M3 changes in the direction shown in FIG. The resultant force G acting on the chemical liquid 3 is a composite vector of the centrifugal force M2, the acceleration force M3, and the gravity M1, and the resultant force G acts in a direction perpendicular to the surface of the wafer 2. Further, the time during which the coating apparatus is in the acceleration state and the constant speed state is shorter than the time when the coating apparatus is in the constant speed state, and most of the coating processing is performed in the constant speed state.

That is, when the rotating arm 8 is rotated by the spin motor 7, the operation of the free joint 6
The force G acting on the chemical solution 3 on the wafer 2 in the windproof wafer case 5 placed on the self-aligning arm 9 always acts in a direction perpendicular to the surface of the wafer 2, so that most of the chemical solution differs from the conventional one. Can be formed without skipping to the periphery.

As described above, according to the coating apparatus of this embodiment,
Since a high resultant force G is applied to the chemical solution 3 on the wafer 2 in a direction perpendicular to the surface of the wafer 2, coating unevenness during coating is smoothed, and a uniform film can be formed regardless of the coating method. In comparison with the spin coating method, it is not necessary to dispense most of the chemical solution. As a result, the cost can be reduced by reducing the amount of the chemical solution, and furthermore, the film can be formed uniformly, thereby improving the yield.

Conventionally, with respect to a high-viscosity chemical solution, since only the centrifugal force of the chemical solution 3 is used, it is difficult to spread the chemical solution to fine concave portions, and it has not been possible to flatten the solution. However, in the coating apparatus of this embodiment,
As described above, the force G acting on the chemical solution 3 is always the wafer 2
Since it works in a direction perpendicular to the surface, even with a highly viscous chemical solution, the chemical solution 3 spreads to the fine concave portions and can be flattened, facilitating a process that has been difficult so far.

Further, since the resist can be flattened only by the spin-coating process, the etch-back step which has been conventionally required becomes unnecessary, and the number of steps can be reduced.

Further, by providing the windproof wafer case 5 on the table (the self-aligning arm 9) on which the wafer 2 is mounted, the airflow on the surface of the wafer 2 can be suppressed, and the generation of stripes due to the airflow can be prevented. Variation in thickness can be suppressed.

Next, FIG. 2A shows a configuration diagram of a coating apparatus according to a second embodiment of the present invention. The coating apparatus of the present embodiment is an embodiment relating to the coating apparatus having the first, second, fourth, and fifth features of the present invention.

As compared with the first embodiment, the rotation axis R of the spin motor 7 in the coating apparatus according to the first embodiment is
In this embodiment, the rotation axis R of the rotation drive unit 7 is perpendicular to the gravity M1. Otherwise, it has the same structure as the first embodiment.

That is, in FIG. 2A, the coating apparatus of this embodiment includes a setting means for setting the wafer 2 to be coated, and a spin motor 7 for rotating the setting means in a predetermined direction.
It is composed of The installation means includes a rotating arm 8 rotated by a spin motor 7, an automatic centering arm 9 on which the wafer 2 is mounted, a rotating arm 8 and an automatic centering arm 9,
A free joint 6 that connects each other so as to have an arbitrary angle in an arbitrary direction, and a windproof wafer case 5 that is mounted on the self-aligning arm 9 and mounts the wafer 2 therein is configured. I have. The windproof wafer case 5 prevents the air flow on the wafer 2 from being disturbed.

Hereinafter, the coating process by the coating apparatus of the present embodiment will be described with reference to FIG.

First, the wafer 2 on which the chemical solution 3 is placed in a stationary state (the state where the spin motor 7 is stopped) is placed in the windproof wafer case 5. At this time, the centrifugal force M2 and the acceleration force M3 are both zero, and only the gravitational force M1 is applied to the chemical solution 3 on the wafer 2, and the coating apparatus is in a state as shown in FIG.

Next, when the spin motor 7 is started and the rotary arm 8 is rotated about the rotation axis R, the self-aligning arm 9 moves away from the rotation axis R by the centrifugal force.
FIG. 2B is a cross-sectional view illustrating a state in which the installation unit is performing a constant-velocity motion by the rotation of the spin motor 7. In this constant velocity state, the acceleration force M3 = 0, and therefore, FIG.
As shown at the upper end in the middle, the resultant force G acting on the chemical solution 3 is a composite vector of the centrifugal force M2 and the gravity M1, and this resultant force G
Acts perpendicular to the surface of the wafer 2.

As in the case of the first embodiment, in the acceleration state in which the velocity reaches the constant velocity state, and in the deceleration state in which the velocity changes from the constant velocity state to the stop state, the resultant force G acting on the chemical 3 is the centrifugal force M2, the acceleration force This is a composite vector of M3 and gravity M1, and the resultant G acts in a direction perpendicular to the surface of the wafer 2. The time during which the coating device is in the acceleration state and the constant velocity state is as follows.
The time is extremely short compared to the time in the constant speed state, and most of the coating processing is performed in the constant speed state.

That is, when the rotating arm 8 is rotated by the spin motor 7, the operation of the free joint 6
The force G acting on the chemical solution 3 on the wafer 2 in the windproof wafer case 5 placed on the self-aligning arm 9 always acts in a direction perpendicular to the surface of the wafer 2, so that most of the chemical solution differs from the conventional one. Can be formed without skipping to the periphery.

As described above, according to the coating apparatus of this embodiment,
As in the first embodiment, a high resultant force G is applied to the chemical solution 3 on the wafer 2 in a direction perpendicular to the surface of the wafer 2, so that a film can be uniformly formed. In comparison, the cost can be reduced by reducing the amount of the chemical solution, and the yield can be further improved.

In addition, even with a high-viscosity chemical, the chemical 3 can spread to the fine concave portions and can be flattened, thereby facilitating the coating process using the high-viscosity chemical, which has been conventionally difficult. In addition, the etch-back process that was required in the past becomes unnecessary,
The number of steps can be reduced. Further, in this embodiment,
By providing the windproof wafer case 5 on the table (the self-aligning arm 9) on which the wafer 2 is mounted, airflow on the surface of the wafer 2 can be suppressed, stripes can be prevented from being generated by the airflow, and variations in film thickness can be suppressed. it can.

Next, FIG. 3 shows a configuration diagram of a coating apparatus according to a third embodiment of the present invention. The coating apparatus according to the present embodiment is an embodiment relating to the coating apparatus according to the fifth and sixth aspects of the present invention.

As shown in the figure, the coating apparatus of the present embodiment includes an installation means for installing the wafer 2 to be coated, and a spin motor 7 'for rotating the installation means in a predetermined direction. The setting means sets the rotating arm 8 rotated by the spin motor 7 ′, the self-aligning arm 9 on which the wafer 2 is mounted, the rotating arm 8 and the self-aligning arm 9 so that each has an arbitrary angle in an arbitrary direction. , And a wafer case 11 mounted on the self-aligning arm 9 and mounting the wafer 2 therein.

The wafer case 11 is for preventing the air flow on the wafer 2 from being disturbed, and is different from the windproof wafer case 5 in the coating apparatus of the first embodiment.
It has a closed structure. A tube 12 is connected to a lid on the upper part of the wafer case 11. The tube 12 is attached to a cavity in a rotation shaft of the spin motor 7 ′, and a solvent is injected from an injection port 13.

In this embodiment, a predetermined solvent (for example, thinner) is injected into the wafer case 11 through the tube 12, and the same coating treatment as in the first embodiment is performed.

First, the wafer 2 on which the chemical solution 3 is mounted is placed in the wafer case 11 in a stationary state (the state where the spin motor 7 ′ is stopped).
Inject solvent into 1. Next, the rotating arm 8 is rotated by the spin motor 7 '. At this time, the force G acting on the chemical solution 3 on the wafer 2 in the wafer case 11 placed on the self-aligning arm 9 by the action of the free joint 6 always acts in a direction perpendicular to the surface of the wafer 2. So
A film can be formed without causing most of the chemical solution to flow to the periphery as in the related art. Further, in the present embodiment, the wafer 2 and the chemical solution 3 are placed in a solvent in the hermetically sealed wafer case 11 so that the surrounding atmosphere is made more stable so that the chemical liquid film thickness becomes uniform.

In other words, the coating apparatus of this embodiment is provided with the wafer case 11 capable of controlling the atmosphere on the wafer 2 so that the solvent atmosphere can be kept constant even when a resist having a quick-drying solvent is used, for example. By
The coating treatment can be performed without drying until the film thickness becomes stable. Further, since the wafer case 11 is of a sealed type, it is possible to prevent dust and the like from adhering.

Next, FIG. 4 shows a configuration diagram of a coating apparatus according to a fourth embodiment of the present invention. The coating apparatus according to the present embodiment is an embodiment relating to the coating apparatus according to the eighth and ninth features of the present invention.

The coating apparatus of this embodiment is similar to the coating apparatus of the first embodiment, except that the installation means (rotary arm 8, self-aligning arm 9, free joint 6, and windproof wafer case 5) are wrapped around the spin motor 7 And a container 15 that rotates.

Also in this embodiment, by injecting a predetermined solvent (such as thinner) into the container 15 and keeping the solvent atmosphere constant, the drying is performed until the film thickness becomes stable, as in the third embodiment. The coating process can be performed without causing the dust to adhere, and the adhesion of dust and the like can be prevented.

In the present embodiment, the windproof wafer case 5 is provided. However, the atmosphere around the wafer 2 can be sufficiently stabilized without installing the wafer case 5.

Further, without providing the container 15 having the structure as in the present embodiment, the atmosphere of a predetermined solvent or air around the coating apparatus is pressurized, depressurized, or rectified by fins or the like to adjust the state of the surface of the wafer 2. Is maintained under a constant condition, the variation in the film thickness formed on the wafer 2 can be reduced, and the yield and the reliability can be improved.

Next, FIG. 5 shows a configuration diagram of a coating apparatus according to a fifth embodiment of the present invention. The coating apparatus of the present embodiment is an embodiment relating to the coating apparatus of the seventh aspect of the present invention.

As shown in the figure, the coating apparatus of this embodiment comprises a setting means for setting the wafer 2 to be coated, and a spin motor 7 'for rotating the setting means in a predetermined direction. The setting means connects the rotating arm 8 ′ rotated by the spin motor 7 ′, the self-aligning arm 9 for mounting the wafer 2, the rotating arm 8 ′ and the self-aligning arm 9 to each other at an arbitrary angle in an arbitrary direction. A free joint 6 to be connected to be held, and a windproof wafer case 5 ′ mounted on the self-aligning arm 9 and mounting the wafer 2 therein.
It is provided with.

The windproof wafer case 5 ′ is for preventing the air flow on the wafer 2 from being disturbed, and the windproof wafer case 5 ′ has a structure rotated in a predetermined direction by the second spin motor 21. I have. The wiring 22 for the second spin motor 21 has a structure passing through a cavity in the rotation axis of the spin motor 7 '.

First, the wafer 2 on which the chemical solution 3 is mounted in a stationary state (a state in which the spin motor 7 'is stopped) is mounted in the windproof wafer case 5'. Next, the rotating arm 8 'is rotated by the spin motor 7', and at the same time, the windproof wafer case 5 'is rotated by the second spin motor 21.
At this time, the force G acting on the chemical 3 on the wafer 2 in the windproof wafer case 5 ′ mounted on the self-aligning arm 9 by the action of the free joint 6 is always in a direction perpendicular to the surface of the wafer 2. Therefore, a film can be formed without causing most of the chemical solution to flow to the periphery as in the related art.

As described above, in the present embodiment, the windproof wafer case 5 ′ is rotated by the second spin motor 21, so that in the coating apparatuses of the first to fourth embodiments, the chemical liquid 3 is applied for some reason. Even when the force G acting on the wafer 2 does not strictly work in the direction perpendicular to the surface of the wafer 2, the coating treatment can be performed without the chemical solution 3 being biased to a part on the wafer 2, and flattening can be achieved. Become.

The rotation by the second spin motor 21 may be performed on the portion of the self-aligning arm 9 on which the wafer 2 is mounted or on the wafer case 11 used in the third embodiment. Conceivable.

[0064]

As described above, according to the coating apparatus of the present invention, the wafer to be coated is set on the setting means, and the setting means is rotated in a predetermined direction by the rotation driving section. By connecting the rotating arm and the free arm on which the wafer is mounted by connecting means so as to have an arbitrary angle in an arbitrary direction with respect to each other, the centrifugal force, gravity, and acceleration force applied to the chemical solution on the wafer In the process of applying a chemical to the wafer surface in the semiconductor manufacturing process, the chemical is applied with a force perpendicular to the wafer surface because the resultant force always acts in the vertical direction on the wafer surface. In addition, the present invention provides a coating apparatus that can achieve uniformity of the chemical liquid film thickness, reduce the amount of the chemical liquid, and reduce the cost because the chemical liquid does not need to be sputtered, and can further improve the yield. Door can be.

In addition, since the coating process can be performed without performing the flattening process for flattening the interlayer film as in the related art, the number of processes can be reduced, and the coating process of a high-viscosity chemical can be easily performed. An application device that can be performed can be provided.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a coating apparatus according to a first embodiment of the present invention. FIG. 1A is a cross-sectional configuration diagram in a stopped state, and FIG.
(2) is a sectional configuration diagram in an operation (constant speed) state, FIG. 1 (3)
FIG. 4 is a plan view illustrating an operation in an operating state.

FIG. 2 is a configuration diagram of a coating apparatus according to a second embodiment of the present invention. FIG. 2A is a cross-sectional configuration diagram in a stopped state, and FIG.
(2) is a cross-sectional configuration diagram in an operating (constant speed) state.

FIG. 3 is a configuration diagram of a coating apparatus according to a third embodiment of the present invention.

FIG. 4 is a configuration diagram of a coating apparatus according to a fourth embodiment of the present invention.

FIG. 5 is a configuration diagram of a coating apparatus according to a fifth embodiment of the present invention.

FIG. 6 is a configuration diagram of a conventional coating apparatus.

FIG. 7 is a cross-sectional view of the semiconductor integrated circuit in a coating processing step, and FIG. 7A is a cross-sectional view after spin processing;
(2) is a cross-sectional view after the completion of the coating process.

[Explanation of symbols]

 2 Wafer 3 Chemical solution 4 Resist 4 'Film with chemical solution 5, 5' Windproof wafer case (case) 6 Free joint (connection means) 7, 7 'Spin motor (rotation drive unit) 8, 8' Rotating arm 9 Self-aligning arm (Free arm) R Rotating axis M1 Gravity M2 Centrifugal force M3 Acceleration force 11 Wafer case 12 Tube 13 Tube solvent inlet 15 Container 16 Container solvent inlet 17-1, 17-2 Container solvent outlet 21 Second Spin motor (second rotation drive unit) 22 Motor wiring 51 Spin chuck

────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Hiroshi Uchida 25-1, Ekimae Honcho, Kawasaki-ku, Kawasaki-ku, Kanagawa Prefecture In-house Toshiba Microelectronics Co., Ltd. (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/027 B05C 11/08 G03F 7/16 502

Claims (9)

(57) [Claims] 1. A wafer to be coated is installed and starts to rotate, and the wafer is accelerated from a stopped state to a constant-speed state where the wafer rotates at a constant speed, a constant-speed state where the wafer is rotating at a constant speed, and the like. In any state of the deceleration state from the speed state to the stop state, the resultant force of the centrifugal force, gravity, and acceleration force applied to the chemical applied on the wafer always acts in a direction perpendicular to the surface of the wafer. Thus, a coating apparatus comprising: an installation unit that supports a wafer so as to be capable of swinging up, down, left, and right and installs the wafer; and a rotation driving unit that rotates the installation unit in a predetermined direction. 2. The method according to claim 1, wherein the setting unit includes: a rotating arm that is rotated by the rotation driving unit; a free arm on which the wafer is mounted; and a rotating arm and the free arm, each having an arbitrary angle in an arbitrary direction. The coating device according to claim 1, further comprising: a connection unit configured to be connected to have. 3. The coating apparatus according to claim 1, wherein a rotation axis of the rotation drive unit is in the same direction as the gravity. 4. The coating apparatus according to claim 1, wherein a rotation axis of the rotation driving unit is perpendicular to the gravity. 5. The apparatus according to claim 2, wherein said installation means has a case mounted on said free arm, and said wafer mounted on said free arm such that an air flow on said wafer is not disturbed. Or the coating device according to 4. 6. The coating apparatus according to claim 5, wherein a predetermined solvent is injected into the case. 7. The apparatus according to claim 2, wherein said installation means has a portion of said free arm on which said wafer is mounted, or a second rotation drive section for rotating said case in a predetermined direction. The coating device according to 4, 5, or 6. 8. The apparatus according to claim 1, wherein the coating device is installed in the predetermined solvent.
Or the coating device according to 7. 9. The coating device wraps the installation means,
The coating device according to claim 1, further comprising a container that is rotated by the rotation driving unit, wherein a predetermined solvent is injected into the container.