JP3227003B2 - Semiconductor manufacturing equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus .
The present invention relates to a processing method and a semiconductor manufacturing apparatus .

[0002]

2. Description of the Related Art A vertical diffusion / CVD apparatus having a load lock chamber, which is one of semiconductor manufacturing apparatuses, will be described with reference to FIG.

A reaction chamber 1 which is an airtight chamber and a processing chamber is provided with a load lock chamber 3 which is an airtight chamber via a gate valve 2, and a nitrogen gas supply line 4 and a gas exhaust Line 5 is connected. Further, a nitrogen gas supply line 6, a gas exhaust line 7, and a vacuum pump 8 are connected to the load lock chamber 3. The nitrogen gas supply line 6 is provided with an air valve 9, and the gas exhaust line 7 is provided with an air valve 10.

[0004] A boat insertion device (not shown) is provided in the load lock chamber 3, and a wafer 12 loaded in a boat 11 is inserted into the reaction chamber 1, and processing such as diffusion and thin film formation is performed on the wafer 12. And then take it out.

The gas supply / discharge operation in such a conventional vertical diffusion and CVD apparatus will be described. The vacuum pump 8 is driven with the gate valve 2 closed to vacuum-load the load lock chamber 3. Then, nitrogen gas is circulated from the nitrogen gas supply line 6 to make the load lock chamber 3 a nitrogen gas atmosphere to reduce the oxygen concentration.

[0006]

In the above-mentioned conventional vertical diffusion and CVD apparatus, when the nitrogen gas is circulated and the load lock chamber 3 is in a nitrogen gas atmosphere, the load lock chamber 3 becomes a positive pressure. A pressure difference occurs between the reaction chamber 1 and the pressure chamber. Therefore, when the gate valve 2 is opened, the pressure difference causes nitrogen gas to flow from the load lock chamber 3 into the reaction chamber 1 and induce dust generation. Therefore, particles in the reaction chamber 1 and the load lock chamber 3 increase, and the wafer 1
2 had a phenomenon of deteriorating the cleanliness.

The present invention has been made in view of the above circumstances, and has as its object to provide a semiconductor manufacturing apparatus including a vertical diffusion and CVD apparatus capable of preventing dust generation when the gate valve 2 is opened.

[0008]

SUMMARY OF THE INVENTION The present invention provides a method for controlling
Multiple airtight chambers and one adjacent airtight chamber
To the gas line that communicates with
Another gas line to be passed through and said two hermetically sealed chambers
Differential pressure detecting means for detecting a pressure difference between
The gas line of the airtight chamber of
A connecting pipe communicating with the line, and a connecting pipe provided in the connecting pipe;
Valve that opens when the pressure difference falls below a specified value
And a gas supply line and a gas exhaust provided in the hermetic chamber.
A line and a setting reference value storage means for storing a predetermined value of the pressure difference
And the gas supply line valve opening corresponding to the differential pressure
Differential pressure / valve that stores the valve opening of the gas exhaust line
Pressure opening / valve opening according to differential pressure value
The corresponding valve opening is read from the
Supply line valve opening adjustment means or gas exhaust line
Instructs the valve opening adjusting means to set the valve opening
The present invention relates to a semiconductor manufacturing apparatus having valve opening amount control means.
And a plurality of hermetic chambers connected to each other
The gas line communicating with one of the airtight chambers
Another gas line communicating with the other hermetic chamber,
Differential pressure detecting means for detecting a pressure difference between two airtight chambers in contact with each other
And the gas line of one of the adjacent airtight chambers and the adjacent one
A communication pipe communicating with the gas line of the other hermetic chamber;
When the pressure difference provided in the connecting pipe becomes less than a predetermined value
To be set to store the specified value of the pressure difference
A reference value storage means and a gas supply line buffer corresponding to the differential pressure.
The opening of the valve and the valve opening of the gas exhaust line are stored.
Differential pressure / valve opening amount defining means and differential pressure according to the differential pressure value
/ Read the corresponding valve opening from the valve opening defining means
Gas supply line valve opening adjustment means or gas
The amount of valve opening is adjusted by the exhaust line valve opening
Valve opening amount control means for setting and instructing operation mode switching
Switching means, and the learning operation mode is designated by the switching means.
When set, gas supply line valve opening reading means
The opening amount of the gas supply line valve should be
Open the gas exhaust line valve by reading the valve opening
Read the volume and the differential pressure / valve opening together with the differential pressure value at that time
Differential pressure / valve opening amount learning method to write and store in the amount defining means
The present invention relates to a semiconductor manufacturing apparatus having steps.

[0009]

[Function] When the airtight chambers in the shut-off state are opened, gas is supplied to the airtight chambers to equalize the airtight chambers so that the gas does not flow due to the pressure difference. Open the closing means.

[0010]

An embodiment will be described below with reference to the drawings.

Referring to FIG. 1, an embodiment of a vertical diffusion and CVD apparatus which is one of the semiconductor manufacturing apparatuses and has a load lock chamber will be described. In the figure, the same components as those shown in FIG. 19 are denoted by the same reference numerals, and description thereof will be omitted.

The gas exhaust line 5 and the gas exhaust line 7 are short-circuited by a connecting pipe 13, and the gas exhaust line 5 and the gas exhaust line 7 are connected to a differential pressure detecting pipe 1.
5 to connect. The connecting pipe valve 1 is connected to the connecting pipe 13.
4 and two air valves 1 are provided on the differential pressure detecting pipe 15.
7 and 18, and a differential pressure gauge 16 is provided between the two air valves 17 and 18. A gas exhaust line valve 19 is provided on the gas exhaust line 5 downstream of a connection point between the connecting pipe 13 and the differential pressure detecting pipe 15.

The detection signal from the differential pressure detecting pipe 15 is input to a controller 20. The controller 20 controls the connecting pipe valve 14 based on a comparison result between a set reference value 21 and a signal from the differential pressure detecting pipe 15. Open and close. The controller 20 opens and closes the air valve 9, the air valve 10, the air valves 17 and 18, and the gas exhaust line valve 19 to supply and discharge gas in accordance with the operation sequence of the vertical diffusion and CVD apparatus.

Next, the operation will be described.

The connecting pipe valve 14, the air valve 17,
With the 18 closed, a nitrogen gas is circulated from the nitrogen gas supply line 6 to make the load lock chamber 3 a nitrogen gas atmosphere. Then, the two air valves 17 and 18 are opened and the gas exhaust line valve 19 is closed. Nitrogen gas is allowed to flow through the nitrogen gas supply line 4 into the reaction chamber 1.

The pressure difference between the inside of the reaction chamber 1 and the load lock chamber 3 is detected by the differential pressure gauge 16, and the detection result is input to the controller 20 as described above. The controller 20 compares the detection result of the differential pressure gauge 16 with the set reference value 21, and when the detection result becomes smaller than the set reference value 21, the pressure difference between the reaction chamber 1 and the load lock chamber 3 is reduced. Is opened, the communication pipe valve 14 is opened. The gate valve 2 is opened after a lapse of a required time after opening the connecting pipe valve 14 or when the pressure difference has disappeared by monitoring the differential pressure gauge 16.

By such an operation, it is possible to suppress a sudden flow of gas caused by a pressure difference between the reaction chamber 1 and the load lock chamber 3 when the gate valve 2 is opened, thereby preventing dust generation. .

An embodiment of another semiconductor manufacturing apparatus will be described with reference to FIG.

A plurality of adjacent processing chambers 101 are connected via a gate valve 102, and a nitrogen gas supply line 103 and a gas exhaust line 105 are connected to each of the processing chambers 101. The nitrogen gas supply line 103 is provided with an air valve 104, and the gas exhaust line 105 is provided with an air valve 106.

The gas exhaust line 105a connected to one adjacent processing chamber 101a and the other adjacent processing chamber 10a
1b and a gas exhaust line 105b connected to the connecting pipe 10
8b and the gas exhaust line 105
a and the gas exhaust line 105b are connected
b.

The communication pipe valve 107 is connected to the communication pipe 108b.
b, and two air valves 110b and 110c are provided in the differential pressure detecting pipe 111b.
A differential pressure gauge 109b is provided between 0b and 110c. A gas exhaust line valve 106a is provided on the gas exhaust line 105a downstream of a connection point between the communication pipe 108b and the differential pressure detecting pipe 111b. A gas exhaust line valve 106b is provided on the gas exhaust line 105b downstream of a connection point between the communication pipe 108b and the differential pressure detecting pipe 111b.

The detection signal from the differential pressure gauge 109b is input to a controller 112a, and the controller 112a opens and closes the communication pipe valve 107b based on a comparison result between a set reference value 113a and a signal from the differential pressure gauge 109b. Further, the controller 112a operates according to the operation sequence of the semiconductor manufacturing apparatus.
In order to supply and discharge gas, the air valve 110b, the air valve 110c, the communication pipe valve 107b, the gas exhaust line valve 106a, and the gas exhaust line valve 106b are opened and closed.

Similarly, a gas exhaust line 105b connected to one adjacent processing chamber 101b and a gas exhaust line 105c connected to the other adjacent processing chamber 101c are short-circuited by a communication pipe 108c. And the gas exhaust line 105c are connected by a differential pressure detecting pipe 111c.

The connecting pipe valve 107 is connected to the connecting pipe 108c.
c, and two air valves 110d and 110e are provided in the differential pressure detecting pipe 111c.
A differential pressure gauge 109c is provided between 0d and 110e. A gas exhaust line valve 106b is provided downstream of a connection point of the communication pipe 108c and the differential pressure detection pipe 111c of the gas exhaust line 105b. A gas exhaust line valve 106c is provided on the gas exhaust line 105c downstream of a connection point between the communication pipe 108c and the differential pressure detecting pipe 111c.

A detection signal from the differential pressure gauge 109c is input to a controller 112b, and the controller 112b opens and closes the communication pipe valve 107c based on a result of comparison between a set reference value 113b and a signal from the differential pressure gauge 109c. Further, the controller 112b operates according to the operation sequence of the semiconductor manufacturing apparatus.
In order to supply and discharge gas, the air valve 110d, the air valve 110e, the communication pipe valve 107c, the gas exhaust line valve 106b, and the gas exhaust line valve 106c are opened and closed.

As described above, the adjacent processing chambers 101 have the same gas supply / discharge mechanism.

The adjacent one processing chamber 101a, the other processing chamber 101b, and the gate valve 102b therebetween provide
The operation of this embodiment will be described.

The communication pipe valve 107b, the air valve 1
With the 10b and 110c closed, a nitrogen gas is circulated from the nitrogen gas supply line 103b to make the other adjacent processing chamber 101b a nitrogen gas atmosphere. Then, the two air valves 110b and 110c are opened, and the gas exhaust line is opened. The valve 106a is closed. The nitrogen gas supply line 10
The nitrogen gas flows from the side 3a into the one adjacent processing chamber 101a.

The pressure difference between the inside of one adjacent processing chamber 101a and the other adjacent processing chamber 101b is detected by the differential pressure gauge 109b, and the detection result is input to the controller 112a as described above. The controller 112a compares the detection result of the differential pressure gauge 109b with the set reference value 113a, and, when the detection result becomes smaller than the set reference value 113a, the other one of the adjacent processing chambers 101a and the other of the adjacent processing chamber 101a. In order to completely eliminate the pressure difference with the processing chamber 101b, the communication pipe valve 107b is opened. The gate valve 102b is opened after the required time elapses after the connecting pipe valve 107b is opened or when the pressure difference disappears as monitored by the differential pressure gauge 109b.

By having the above-described structure, it is possible to suppress a rapid flow of gas caused by a pressure difference between one adjacent processing chamber and the other adjacent processing chamber when the gate valve is opened. , Dust generation can be prevented.

An embodiment of another semiconductor manufacturing apparatus will be described with reference to FIG.

Another embodiment shown in FIG. 3 is a modification of the embodiment shown in FIG. 2, in which an adjacent nitrogen gas supply line 103 is connected by a communication pipe 108. Other configurations are the same as those of the embodiment shown in FIG. 2, and the embodiment shown in FIG. 3 has the same operation and effect as the embodiment shown in FIG.

An embodiment of another semiconductor manufacturing apparatus will be described with reference to FIG.

The other embodiment shown in FIG. 4 is a further modification of FIG.
01 is connected. Other configurations are the same as those of the embodiment shown in FIG. 3, and have the same operations and effects as those of the embodiment shown in FIG.

Referring to FIG. 5, another embodiment of the semiconductor manufacturing apparatus will be described.

Another embodiment shown in FIG. 5 is a modification of the embodiment shown in FIG. 2, in which the gas exhaust line 115 is bent,
It is branched and connected to the processing chamber 101.
Other configurations are the same as those of the embodiment shown in FIG.

The operation of this embodiment is the same as that of the embodiment of FIG. 2. Further, since the gas exhaust line 115 is bent, the bent portion becomes an obstacle, and the backflow of dust such as particles can be prevented. .

The gate valve 10 between the adjacent processing chambers
2 is opened, and the two processing chambers are in a state of equalizing pressure.
It goes without saying that the processing chamber can be in any of a reduced pressure state, an atmospheric pressure state, and a pressurized state.

An embodiment of another semiconductor manufacturing apparatus will be described with reference to FIG.

The other embodiment shown in FIG. 6 is a modification of the embodiment shown in FIG.
A flow control valve 114 is provided in place of 07. Other configurations are the same as those of the embodiment shown in FIG.

In order to completely eliminate the pressure difference between the one adjacent processing chamber 101 and the other adjacent processing chamber 101,
Although the flow control valve 114 is gradually opened, the final equalization is performed by the flow control valve 114, so that a smoother equalizing operation can be obtained.

An embodiment of another semiconductor manufacturing apparatus shown in FIG. 7 will be described.

A plurality of adjacent processing chambers 101 are connected to each other via a gate valve 102, and a nitrogen gas supply line 103 and a gas exhaust line 105 are connected to each of the processing chambers 101. The nitrogen gas supply line 103 is provided with an air valve 104, and the gas exhaust line 105 is provided with an air valve 106.

The gas exhaust line 105a connected to one adjacent processing chamber 101a and the other adjacent processing chamber 10
1b and a gas exhaust line 105b connected to the connecting pipe 10
8b causes a short circuit. The communication pipe 108b is provided with a flow control valve 114b. A pressure detection pipe 122a is connected to the gas exhaust line 105a, and an air valve 124a and a pressure switch 123a are provided in the pressure detection pipe 122a. Also, a pressure detection pipe 122b is connected to the gas exhaust line 105b,
An air valve 124b and a pressure switch 123b are provided in the pressure detection tube 122b. A gas exhaust line valve 106a is provided on the gas exhaust line 105a downstream of a connection point between the communication pipe 108b and the pressure detection pipe 122a. A gas exhaust line valve 106b is provided on the gas exhaust line 105b downstream of a connection point between the communication pipe 108b and the pressure detection pipe 122b.

The detection signals from the pressure switches 123a and 123b are input to the controller 112a,
The flow control valve 114b is opened and closed. Also, the controller 112
In the figure, a indicates the air valve 124a, the air valve 124b, the flow control valve 114b, the gas exhaust line valve 106a, and the gas exhaust line valve 106 for supplying and discharging gas in accordance with the operation sequence of the semiconductor manufacturing apparatus.
Open and close b.

Similarly, a gas exhaust line 105b connected to one adjacent processing chamber 101b and a gas exhaust line 105c connected to the other adjacent processing chamber 101c are short-circuited by a communication pipe 108c. A control valve 114c is provided. A pressure detection pipe 122b is connected to the gas exhaust line 105b, and an air valve 124b and a pressure switch 123b are provided in the pressure detection pipe 122b.
A pressure detection pipe 122c is connected to the gas exhaust line 105c, and an air valve 124c and a pressure switch 123c are provided in the pressure detection pipe 122c. The gas exhaust line 1
A gas exhaust line valve 106b is provided on the downstream side of a connection point of the communication pipe 108c and the pressure detection pipe 122b. The connecting pipe 10 of the gas exhaust line 105c
8c, a gas exhaust line valve 106c is provided downstream of the connection point of the pressure detection pipe 122c.

The detection signals from the pressure switches 123b and 123c are input to the controller 112b,
The flow control valve 114c is opened and closed. Also, the controller 112
b denotes the air valve 124b, the air valve 124c, the flow control valve 114c, the gas exhaust line valve 106b, and the gas exhaust line valve 106 for supplying and discharging gas according to the operation sequence of the semiconductor manufacturing apparatus.
Open and close c.

As described above, the adjacent processing chambers 101 have the same gas supply / discharge mechanism.

The adjacent one processing chamber 101a, the other processing chamber 101b, and the gate valve 102b therebetween provide
The operation of this embodiment will be described.

With the flow control valve 114b closed and the air valve 124b opened, the nitrogen gas supply line 10
3b, and the other adjacent processing chamber 101b is set to a nitrogen gas atmosphere. Then, with the gas exhaust line valve 106a closed and the air valve 124a opened, the nitrogen gas is supplied from the nitrogen gas supply line 103a. Nitrogen gas is allowed to flow in one adjacent processing chamber 101a.

The pressure difference between the inside of one adjacent processing chamber 101a and the other adjacent processing chamber 101b is detected by the pressure switches 123a and 123b, respectively. The operating pressures of the two pressure switches 123a and 123b are set to be the same. The pressure switches 123a, 123
3b detect that both pressures are equal to or higher than a predetermined pressure, and the activation signals of both pressure switches 123a and 123b are transmitted to the controller 112.
a, the adjacent one of the processing chambers 101a
The flow control valve 114b is gradually opened to completely eliminate the pressure difference between the processing chamber 101b and the adjacent processing chamber 101b.

With the above-described structure, the rapid flow of gas caused by the pressure difference between the adjacent one processing chamber and the other processing chamber when the gate valve is opened is suppressed, Dust can be prevented.

An embodiment of another semiconductor manufacturing apparatus shown in FIG. 8 will be described.

Another embodiment shown in FIG. 8 is a modification of the embodiment shown in FIG. 7, in which a pressure monitor pipe 116 is connected to the gas exhaust line 105 instead of the pressure detection pipe 122, An air valve 110 and a pressure gauge 12
5 is provided. Other configurations are the same as those in FIG.

In the embodiment shown in FIG. 8, the inside of one adjacent processing chamber 101a and the other adjacent processing chamber 101 are separated.
The pressure of b is detected by the pressure gauges 125a and 125b, respectively, and is input to the controller 112a.
3a, when the difference between the detected values is smaller, the adjacent one processing chamber 101a and the adjacent processing chamber 10
1b to completely eliminate the pressure difference with the flow control valve 1b.
14b is gradually opened.

With the above-described structure, the rapid flow of gas caused by the pressure difference between one of the adjacent processing chambers and the other processing chamber when the gate valve is opened can be suppressed. Dust can be prevented.

An embodiment of another semiconductor manufacturing apparatus shown in FIG. 9 will be described.

The embodiment shown in FIG. 9 is a modification of the embodiment shown in FIG. 8, in which a communication pipe valve 107 is provided in the communication pipe 108 in place of the flow control valve 114. Other configurations are the same as those of the embodiment shown in FIG. 8, and the operation is the same as that of the embodiment shown in FIG. 8, and the pressure in the adjacent one processing chamber 101a and the pressure in the other adjacent processing chamber 101b are reduced. When the pressure is detected by the pressure gauges 125a and 125b and input to the controller 112a,
When the difference between the detected values of 5a and 125b is compared with the set reference value 113a and the difference between the detected values is smaller, the pressure difference between the adjacent one processing chamber 101a and the adjacent other processing chamber 101b is completely eliminated. The communication pipe valve 107b
Gradually open.

An embodiment of a vertical diffusion and CVD apparatus having a load lock chamber in FIG. 10 will be described. In the figure, the same components as those shown in FIG. 19 are denoted by the same reference numerals, and description thereof will be omitted.

The gas exhaust line 5 and the gas exhaust line 7 are short-circuited by a communication pipe 13, and the gas exhaust line 5 and the gas exhaust line 7 are connected to a differential pressure detecting pipe 1.
5 to connect. The connecting pipe valve 1 is connected to the connecting pipe 13.
4 and two air valves 1 are provided on the differential pressure detecting pipe 15.
7 and 18, and a differential pressure gauge 16 is provided between the two air valves 17 and 18. A gas exhaust line valve 19 is provided on the gas exhaust line 5 downstream of a connection point between the connecting pipe 13 and the differential pressure detecting pipe 15. Elevator cap 23
Is connected to a boat elevator not shown in the figure, and a quartz cap 22 and a boat 11
Is installed, and wafers 12 are loaded into the boat 11.

The detection signal from the differential pressure detecting pipe 15 is input to a controller 20. The controller 20 controls the connecting pipe valve 14 based on a comparison result between a set reference value 21 and a signal from the differential pressure detecting pipe 15. Open and close. The controller 20 opens and closes the air valve 9, the air valve 10, the air valves 17 and 18, and the gas exhaust line valve 19 to supply and discharge gas in accordance with the operation sequence of the vertical diffusion and CVD apparatus, and closes the elevator cap 23. Go up and down.

Next, the operation will be described.

When the elevator cap 23 is raised and lowered and the elevator cap 23 is lowered from the state where the reaction chamber 1 is sealed by the elevator cap 23, the following operation is performed.

The connecting pipe valve 14, the air valve 17,
With the 18 closed, a nitrogen gas is circulated from the nitrogen gas supply line 6 to make the load lock chamber 3 a nitrogen gas atmosphere. Then, the two air valves 17 and 18 are opened and the gas exhaust line valve 19 is closed. Nitrogen gas is allowed to flow through the nitrogen gas supply line 4 into the reaction chamber 1.

The pressure difference between the inside of the reaction chamber 1 and the load lock chamber 3 is detected by the differential pressure gauge 16, and the detection result is input to the controller 20 as described above. The controller 20 compares the detection result of the differential pressure gauge 16 with the set reference value 21, and when the detection result becomes smaller than the set reference value 21, the pressure difference between the reaction chamber 1 and the load lock chamber 3 is reduced. Is opened, the communication pipe valve 14 is opened. The elevator cap 23 is lowered after the required time has elapsed after the connecting pipe valve 14 has been opened or when the pressure difference has disappeared as monitored by the differential pressure gauge 16.

By such an operation, it is possible to suppress a rapid flow of gas caused by a pressure difference between the reaction chamber 1 and the load lock chamber 3 when the elevator cap 23 is lowered, thereby preventing dust generation. it can.

An embodiment of the semiconductor manufacturing apparatus shown in FIG. 11 will be described.

A plurality of adjacent processing chambers 101 are connected to each other via a gate valve 102, and a nitrogen gas supply line 103 and a gas exhaust line 105 are connected to each of the processing chambers 101. The nitrogen gas supply line 103 is provided with an air valve 104, and the gas exhaust line 105 is provided with an air valve 106.

The gas exhaust line 105a connected to one adjacent processing chamber 101a and the other adjacent processing chamber 10a
1b and a gas exhaust line 105b connected to the connecting pipe 10
8b and the gas exhaust line 105
a and the gas exhaust line 105b are connected
b. Further, a gas discharge line 121a is provided in the gas exhaust line 105a,
Is provided with a gas release line 121b.

The connecting pipe valve 107 is connected to the connecting pipe 108b.
b, and two air valves 110b and 110c are provided in the differential pressure detecting pipe 111b.
A differential pressure gauge 109b is provided between 0b and 110c.

An air valve 117a, a pressure switch 118a, an air valve 117b, a flow control valve 119a, and a check valve 12 are connected to the gas discharge line 121a from the upstream side.
0a is provided. An air valve 117c and a pressure switch 11 are connected to the gas release line 121b from the upstream side.
8b, an air valve 117d, a flow control valve 119b, and a check valve 120b are provided.

The gas discharge line 121a of the gas exhaust line 105a, the communication pipe 108b, and the differential pressure detection pipe 111
downstream of the connection point b.
a is provided. The gas discharge line 121b of the gas exhaust line 105b, the communication pipe 108b, and the differential pressure detection pipe 111
downstream of the connection point b.
b is provided.

A detection signal from the differential pressure gauge 109b is input to a controller 112a, and the controller 112a opens and closes the communication pipe valve 107b based on a comparison result between a set reference value 113a and a signal from the differential pressure gauge 109b. The controller 112a supplies and discharges gas according to the operation sequence of the semiconductor manufacturing apparatus. Therefore, the air valve 110b, the air valve 110c, the communication pipe valve 107b, the gas exhaust line valve 106a, the gas exhaust line valve 106b, Air valves 117a, 117b, 11
7c and 117d are opened and closed.

Similarly, a gas exhaust line 105b connected to one adjacent processing chamber 101b and a gas exhaust line 105c connected to the other adjacent processing chamber 101c are short-circuited by a communication pipe 108c. And the gas exhaust line 105c are connected by a differential pressure detecting pipe 111c, and a gas discharge line 121b is provided in the gas exhaust line 105b.
5c is provided with a gas release line 121c. The connecting pipe 1
08c is provided with a communication pipe valve 107c, the differential pressure detection pipe 111c is provided with two air valves 110d and 110e, and a differential pressure gauge 109c is provided between the two air valves 110d and 110e.

An air valve 117c, a pressure switch 118b, an air valve 117d, a flow control valve 119b, and a check valve 12 are connected to the gas discharge line 121b from the upstream side.
0b, an air valve 117e, a pressure switch 118c,
An air valve 117f, a flow control valve 119c, and a check valve 120c are provided.

The gas discharge line 121b of the gas exhaust line 105b, the connecting pipe 108c, the differential pressure detecting pipe 111
downstream of the connection point c.
b is provided. The gas discharge line 121c of the gas exhaust line 105c, the communication pipe 108c, and the differential pressure detection pipe 111
downstream of the connection point c.
c is provided.

The detection signal from the differential pressure gauge 109c is input to a controller 112b, and the controller 112b opens and closes the communication pipe valve 107c based on a comparison result between the set reference value 113b and the signal from the differential pressure gauge 109c. Further, the controller 112b supplies and discharges gas according to the operation sequence of the semiconductor manufacturing apparatus, so that the air valve 110d, the air valve 110e, the communication pipe valve 107c, the gas exhaust line valve 106b, the gas exhaust line valve 106c, Air valves 117c, 117d, 11
7e and 117f are opened and closed.

As described above, the adjacent processing chambers 101 have the same gas supply / discharge mechanism.

The adjacent one processing chamber 101a, the other processing chamber 101b, and the gate valve 102b therebetween provide
The operation of this embodiment will be described.

With the gas exhaust line valve 106b, the communication pipe valve 107b, the air valves 110b and 110c, and the air valve 117d closed and the air valve 117c opened, nitrogen gas flows through the nitrogen gas supply line 103b, and The processing chamber 101b is set to a nitrogen gas atmosphere, and the state where the pressure becomes the atmospheric pressure is set to
b is detected, the air valve 117d is opened thereafter, and the processing chamber 101b is maintained near the atmospheric pressure.

The flow control valve 119b used in the gas discharge line 121b changes the open sectional area of the gas discharge line 121b, and the check valve 120b prevents the gas from flowing backward.

The transition of the pressure in the processing chamber 101b is as shown by a curve C in FIG. 12, and when the nitrogen gas is released through the gas release line 121b, the processing chamber 101b
The internal pressure is not to exceed a certain value.

The two air valves 110b, 110c
Is opened, the gas exhaust line valve 106a is closed, and the air valve 117a is opened. The nitrogen gas supply line 103a
The nitrogen gas is further circulated into the adjacent one of the processing chambers 101a, and when the pressure becomes equal to the atmospheric pressure and the pressure switch 118a detects the atmospheric pressure, the air valve 117b is opened, and the nitrogen gas is released from the gas release line 121a. The pressure in 101a is maintained near the atmospheric pressure.

The pressure in the processing chamber 101a is as shown by a curve B shown by a dotted line in FIG. 12, and a value close to the curve C which is the pressure in the processing chamber 101b is maintained. If the gas discharge line 121a is not provided, the pressure in the processing chamber 101a is increased by introducing nitrogen gas to the pressure curve C in the processing chamber 101b, which has become a constant value, and the pressure changes. Becomes like a curve A.

The pressure difference between the inside of one adjacent processing chamber 101a and the other adjacent processing chamber 101b is detected by the differential pressure gauge 109b, and the detection result is input to the controller 112a as described above. The controller 112a is a differential pressure gauge 1
09b is compared with the set reference value 113a. When the detected result is smaller than the set reference value 113a, the pressure difference between the one adjacent processing chamber 101a and the other adjacent processing chamber 101b is determined. To completely eliminate it,
The communication pipe valve 107b is opened. The connecting pipe valve 10
In FIG. 12, the timing for opening 7b is before and after the curve B and the curve C intersect (Δt). When the gas release line 121 is not provided, as described above, the relationship between the pressures in the processing chambers 101a and 101b is a relationship between the curves A and C, and the timing of opening the communication pipe valve 107b is such that the curves A and C cross in FIG. Before and after (Δt). Gas release line 121
In the range of Δt where the opening timing of the connecting pipe valve 107b due to the measurement error of the differential pressure gauge 109b, the operation delay time of the connecting pipe valve 107b, etc. In this case, the pressure difference from the curve C can be reduced. After the required time elapses after the connecting pipe valve 107b is opened, or when the pressure difference disappears as monitored by the differential pressure gauge 109b, the gate valve 10
Open 2b.

With the above-described structure, the rapid flow of gas caused by the pressure difference between one of the adjacent processing chambers and the other processing chamber when the gate valve is opened is suppressed, and Dust can be prevented.

Next, controllers 20 and 112 for controlling the pressure equalization
This will be described with reference to FIGS. 13, 14, 15, 16, and 17. FIG.

The setting reference value storage means 200 for inputting and storing the setting reference values 21 and 113, the differential pressure from the differential pressure gauge 109 for obtaining the differential pressure between one adjacent processing chamber and the other adjacent processing chamber, and the setting reference. A valve opening amount control means 201 for controlling a valve opening amount from a value storage means 200; a differential pressure / valve opening amount defining means 202 for defining an opening amount of a gas supply line valve and an opening amount of a gas exhaust line valve based on a differential pressure. When,
Gas supply line valve opening amount adjusting means 203 for directly controlling gas supply line valve 104 to set the gas supply amount
Gas exhaust line valve opening amount adjusting means 2 for directly controlling the gas exhaust line valve 106 to set the gas exhaust amount.
The operation in the controllers 20, 112 having the 04 will be described.

The differential pressure from the differential pressure gauge 109 for obtaining the differential pressure between one adjacent processing chamber and the other adjacent processing chamber and the set reference value in the set reference value storage means 200 are used by the valve opening amount control means 201. Read and compare the differential pressure with the set reference value.
As a result, if the differential pressure is larger than the set reference value, the valve opening amount control means 201 sets the differential pressure / valve opening amount defining means 20
Gas supply line valve opening amount adjusting means 2 based on the definition value 2
03 and the gas exhaust line valve opening amount adjusting means 204, and the gas supply line valve opening amount adjusting means 203 and the gas exhaust line valve opening amount adjusting means 204 are controlled by the gas supply line valve 104 and the gas exhaust line valve 10, respectively.
6 can be adjusted and controlled to change the gas exhaust characteristic, and the time ta required for the differential pressure to reach the set reference value can be reduced from the state of FIG. 16 to that of FIG.

If the differential pressure is equal to the set reference value or the differential pressure is small, the valve opening amount control means 201 determines the gas supply line valve opening amount from the value defined by the differential pressure / valve opening amount defining means 202. The adjusting means 203 and the gas exhaust line valve opening amount adjusting means 204 are controlled, and the gas supply line valve opening amount adjusting means 203 and the gas exhaust line valve opening amount adjusting means 204 are controlled by the gas supply line valve 104, respectively.
And the gas exhaust line valve 106 are shut off, and the pressure equalizing valve 117 is opened. Accordingly, even if the gate valve between one adjacent processing chamber and the other processing chamber is opened, particles and the like are not generated.

Another embodiment relating to the controllers 20, 112 will be described with reference to FIG.

A setting reference value storage means 200 for inputting and storing the setting reference values 21 and 113, a differential pressure from a differential pressure gauge 109 for obtaining a differential pressure between one adjacent processing chamber and another adjacent processing chamber, and a setting reference. A valve opening amount control means 201 for controlling a valve opening amount from a value storage means 200; a differential pressure / valve opening amount defining means 202 for defining an opening amount of a gas supply line valve and an opening amount of a gas exhaust line valve based on a differential pressure. When,
Gas supply line valve opening amount adjusting means 203 for directly controlling gas supply line valve 104 to set the gas supply amount
Gas exhaust line valve opening amount adjusting means 2 for directly controlling the gas exhaust line valve 106 to set the gas exhaust amount.
04, operation mode switching means 300 for switching between valve opening control and learning and operation of differential pressure / valve opening, and obtaining values of differential pressure, gas supply line valve opening, and gas exhaust line valve opening, Differential pressure / valve opening amount defining means 20
2, a differential pressure / valve opening amount learning means 301 for learning a new definition, a gas supply line valve opening amount reading means 302 for reading an opening amount of a gas supply line, and a gas exhaust line valve for reading an opening amount of a gas exhaust line. The operation of the controllers 20 and 112 having the opening amount reading means 303 will be described.

When the operation mode switching means 300 selects the valve opening amount control means 201, the operation is the same as that of the controllers 20, 112 according to FIG.

When the operation mode switching means 300 selects the differential pressure / valve opening amount learning means 301, the differential pressure by the differential pressure gauge, the opening value of the gas supply line valve 104 and the opening of the gas exhaust line valve 106 which are manually operated, for example, are selected. The differential pressure is determined by the differential pressure / valve opening amount learning means 301.
After reading the opening amounts of the gas supply line valve 104 and the gas exhaust line valve 106 by the gas supply line valve opening amount reading means 302 and the gas exhaust line valve opening amount reading means 303, respectively, the differential pressure / valve opening amount learning is performed. The relationship between the differential pressure and the gas supply line valve opening amount and the gas exhaust line valve opening amount is determined by the differential pressure /
It is set in the valve opening amount defining means 202.

Thus, in the subsequent operation, when the operation mode switching means 300 selects the operation by the valve opening amount control means 201, it becomes possible to carry out the optimum operation with the set defined value.

As described above, the pressure equalization time can be reduced as much as possible while preventing dust generation, which is effective in improving the throughput.

[0097]

As described above, according to the present invention, when the closing means is opened, the rapid flow of gas caused by the pressure difference between one of the adjacent hermetic chambers and the other hermetic chamber is suppressed, and Dust can be prevented, and quality can be improved.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram showing one embodiment of the present invention.

FIG. 2 is an explanatory view showing another embodiment of the present invention.

FIG. 3 is an explanatory view showing another embodiment of the present invention.

FIG. 4 is an explanatory view showing another embodiment of the present invention.

FIG. 5 is an explanatory view showing another embodiment of the present invention.

FIG. 6 is an explanatory view showing another embodiment of the present invention.

FIG. 7 is an explanatory view showing another embodiment of the present invention.

FIG. 8 is an explanatory view showing another embodiment of the present invention.

FIG. 9 is an explanatory view showing another embodiment of the present invention.

FIG. 10 is an explanatory diagram showing another embodiment of the present invention.

FIG. 11 is an explanatory view showing another embodiment of the present invention.

FIG. 12 is an operation explanatory view of the embodiment according to FIG. 11;

FIG. 13 is a block diagram of a controller implemented in the present invention.

FIG. 14 is a flowchart showing the operation of the controller.

FIG. 15 is a definition diagram in the controller.

FIG. 16 is an operation explanatory diagram of the controller.

FIG. 17 is an operation explanatory view of the controller.

FIG. 18 is a block diagram of another controller implemented in the present invention.

FIG. 19 is an explanatory diagram showing a conventional example.

[Explanation of symbols]

 Reference Signs List 1 reaction chamber 2 gate valve 3 load lock chamber 4 nitrogen gas supply line 5 gas exhaust line 6 nitrogen gas supply line 7 gas exhaust line 13 communication pipe 14 communication pipe valve 15 differential pressure detection pipe 16 differential pressure gauge 17 air valve 18 air valve 19 gas exhaust Line valve 103 nitrogen gas supply line 104 air valve 105 gas exhaust line 106 air valve 107 communication pipe valve 108 communication pipe 109 differential pressure gauge 110 air valve 111 differential pressure detection pipe 114 flow control valve 115 gas exhaust line 116 pressure monitor pipe 117 air valve 118 pressure switch 119 Flow control valve 121 Gas release line

Continued on the front page (72) Inventor Satoshi Taniyama 2-3-13 Toranomon, Minato-ku, Tokyo Inside Kokusai Denki Co., Ltd. (72) Inventor Hiroyuki Nishiuchi 2-3-1-3 Toranomon, Minato-ku, Tokyo Kokusai Electric Co., Ltd. (72) Inventor Kazumi Nikaido 2-313 Toranomon, Minato-ku, Tokyo International Electric Co., Ltd. (72) Inventor Yoshikazu Kushima 2-3-1-13 Toranomon, Minato-ku, Tokyo International Electric Co., Ltd. (72) Inventor Michio Sato 2-3-13 Toranomon, Minato-ku, Tokyo Kokusai Denki Co., Ltd. (56) References JP-A-64-50414 (JP, A) JP-A-1-125821 (JP, A) JP-A 2-47828 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/205 C23C 16/455 C30B 25/14 H01L 21/22 501

Claims (2)

(57) [Claims] 1. A plurality of hermetic seals connected via a closing means.
Chamber and a gas line that communicates with one of the adjacent hermetic chambers
And another gas line communicating with the other airtight chamber
And a differential pressure for detecting a pressure difference between the two adjacent airtight chambers.
Detecting means, and a gas line of the adjacent one of the hermetic chambers.
A communication line that communicates with the gas line of the other adjacent airtight chamber.
And the pressure difference provided in the connecting pipe and the connecting pipe is equal to or less than a predetermined value.
A valve that is opened when the
Gas supply line, gas exhaust line, and the predetermined value of the pressure difference
Setting reference value storage means for storing a gas corresponding to the differential pressure
Supply line valve opening and gas exhaust line valve opening
Means for defining a differential pressure / valve opening amount storing a port amount and a differential pressure
Corresponding to the differential pressure / valve opening amount
Read the valve opening and adjust the gas supply line valve opening
Means or gas exhaust line valve opening adjustment means.
Valve opening control means for setting and instructing the opening of the lube.
A semiconductor manufacturing apparatus comprising: 2. A plurality of hermetic seals connected via a closing means.
Chamber and a gas line that communicates with one of the adjacent hermetic chambers
And another gas line communicating with the other airtight chamber
And a differential pressure for detecting a pressure difference between the two adjacent airtight chambers.
Detecting means, and a gas line of the adjacent one of the hermetic chambers.
A communication line that communicates with the gas line of the other adjacent airtight chamber.
And the pressure difference provided in the connecting pipe and the connecting pipe is equal to or less than a predetermined value.
Stores the value of the valve that opens when the pressure reaches
And a gas supply line corresponding to the differential pressure.
Valve opening of gas exhaust valve
Pressure / valve opening amount defining means that stores the
Open the corresponding valve from the differential pressure / valve opening definition means.
Read the amount of gas, and adjust the gas supply line valve opening amount
Or the valve of the gas exhaust line valve
Valve opening amount control means for setting and instructing the opening amount;
Mode switching means and a learning operation mode by the mode switching means.
When the mode is specified, read the gas supply line valve opening.
The opening of the gas supply line valve is
Gas exhaust line bar from gas line valve opening reading means
The opening of the lube is read, and the differential pressure / bar
Differential pressure / valve opening to be written and stored in the lube opening defining means
Semiconductor manufacturing equipment having quantity learning means.
Place.