JP3214558B2 - Heat treatment equipment for silicon single crystal wafer - Google Patents
Heat treatment equipment for silicon single crystal waferInfo
- Publication number
- JP3214558B2 JP3214558B2 JP31585798A JP31585798A JP3214558B2 JP 3214558 B2 JP3214558 B2 JP 3214558B2 JP 31585798 A JP31585798 A JP 31585798A JP 31585798 A JP31585798 A JP 31585798A JP 3214558 B2 JP3214558 B2 JP 3214558B2
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- wafer
- wafers
- single crystal
- silicon single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
【0001】[0001]
【発明の属する技術分野】この発明は、ウェーハを載置
用治具上に積層して一群となし、これを熱処理用ボート
内に垂直方向にスタック配置して大量のシリコン単結晶
ウェーハを同時にかつ均等に熱処理する製造方法におい
て使用する熱処理装置の改良に係り、載置用治具にウェ
ーハ落下防止用支持部を設けて、一連の熱処理工程でウ
ェーハ落下防止及びスリップ発生を抑制可能としたシリ
コン単結晶ウェーハの熱処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of stacking wafers on a mounting jig to form a group, and vertically arranging the stacked wafers in a heat treatment boat so that a large number of silicon single crystal wafers can be formed simultaneously. In connection with the improvement of the heat treatment apparatus used in the manufacturing method of performing uniform heat treatment, a mounting jig is provided with a wafer drop prevention support portion, and a silicon unit capable of preventing wafer drop and suppressing occurrence of slip in a series of heat treatment steps. The present invention relates to a heat treatment apparatus for a crystal wafer.
【0002】[0002]
【従来の技術】半導体デバイスに用いられるシリコンウ
ェーハは、ほとんどがチョクラルスキー(CZ)法で育成さ
れたものであるが、この手法により育成されたシリコン
単結晶は0.1μmサイズの八面体構造をしたGrown‐in欠
陥も同時に導入される。2. Description of the Related Art Most silicon wafers used for semiconductor devices are grown by the Czochralski (CZ) method. A silicon single crystal grown by this method has an octahedral structure with a size of 0.1 μm. The grown-in defect is also introduced at the same time.
【0003】しかし、MOS‐LSIデバイスの高集積化、微細化
に伴い16M‐DRAMまでは問題視されなかったGrown‐in欠
陥がMOSキャパシターの酸化膜耐圧特性を著しく劣化さ
せることから、64M‐DRAM以降ではシリコンウェーハ表
面近傍にGrown‐in欠陥の存在しないウェーハが要求さ
れはじめた。その対策の一つに、高温ウェーハ熱処理に
よるウェーハ表面近傍のGrown‐in欠陥の縮小・消滅手
法が提案(特開昭61‐193456号、特開昭61‐193458号等)
されている。[0003] However, with the high integration and miniaturization of MOS-LSI devices, the problem of the Grown-in defect, which was not regarded as a problem up to 16M-DRAM, significantly deteriorates the oxide breakdown voltage characteristics of MOS capacitors. Since then, wafers without the growth-in defect near the silicon wafer surface have been required. As a countermeasure, a method of reducing and eliminating Gronn-in defects near the wafer surface by high-temperature wafer heat treatment is proposed (JP-A-61-193456, JP-A-61-193458, etc.)
Have been.
【0004】しかし、従来のウェーハ高温熱処理ではウェー
ハ支持用ボート、すなわち複数本の支柱部にウェーハ支
持溝が設置され、各支持溝にウェーハが一枚搭載される
構成になっている。この熱処理方法では一回の熱処理工
程で搭載されるウェーハ枚数はせいぜい100枚程度であ
り、大量のウェーハを同時に処理することは容易でなか
った。[0004] However, in the conventional wafer high-temperature heat treatment, a wafer supporting groove, that is, a wafer supporting groove is provided in a plurality of columns, and one wafer is mounted in each supporting groove. In this heat treatment method, the number of wafers mounted in one heat treatment step is at most about 100, and it is not easy to simultaneously process a large number of wafers.
【0005】発明者らは、この問題を解決する方法、すなわ
ち大量のシリコン単結晶ウェーハを同時にかつ均等に熱
処理する熱処理方法として、例えば10枚程度のウェーハ
を積層して1群となして、これを複数群、水平もしくは
各々水平より僅かに傾斜させて垂直方向にスタック配置
し、同一炉で所要の熱処理を行うことにより、いずれの
目的で行う熱処理であっても、同時に処理する多数のウ
ェーハに均等にかつ効果的に熱処理を施すことを可能に
した熱処理方法(以下、スタックアニール法という)を提
案(特開平10‐74771号)した。As a method for solving this problem, that is, a heat treatment method for simultaneously and uniformly heat-treating a large number of silicon single crystal wafers, for example, about 10 wafers are stacked to form a group. A plurality of groups, horizontally or vertically stacked with a slight inclination from the horizontal, and by performing the required heat treatment in the same furnace, regardless of the heat treatment performed for any purpose, a large number of wafers to be processed simultaneously A heat treatment method (hereinafter, referred to as a stack annealing method) capable of performing heat treatment uniformly and effectively has been proposed (JP-A-10-74771).
【0006】[0006]
【発明が解決しようとする課題】しかし、このスタック
アニール法において、複数枚積み重ねられたウェーハの
一群は高温強度に優れた材質からなる円板またはリング
材上に搭載されているのみで、実際この一群をボート上
に投入、取出しする際、ウェーハの横滑り、さらには落
下等が生じる場合があり、効率良く熱処理を行うことが
困難であった。また横滑りしたウェーハは、ボート支柱
部に接触した場合、その領域でウェーハ面内にスリップ
発生が多発する恐れがあった。However, in this stack annealing method, a group of a plurality of stacked wafers is mounted only on a disk or ring made of a material having excellent high-temperature strength. When a group is put into or taken out of a boat, the wafer may skid, drop, etc., and it has been difficult to efficiently perform the heat treatment. In addition, when the skid wafer comes into contact with the boat support, there is a possibility that the occurrence of slip occurs frequently in the wafer surface in that region.
【０００７】この発明は、前述のスタックアニール法に
おいて、複数枚積み重ねたウェーハの一群を効率良く落
下を防止して移載させることができ、かつさらに熱処理
時のスリップの抑制を可能にしたシリコン単結晶ウェー
ハの熱処理装置の提供を目的としている。According to the present invention, in the above-described stack annealing method, a group of a plurality of stacked wafers is efficiently dropped.
It can be transferred while preventing the bottom , and further heat treatment
It is an object of the present invention to provide a heat treatment apparatus for a silicon single crystal wafer capable of suppressing a slip at the time .
【０００８】[0008]
【課題を解決するための手段】発明者らは、熱処理炉へ
の移載時及び熱処理時に生じるウェーハの横滑り及び落
下防止を目的に、ウェーハの載置用治具の構成について
種々検討した結果、円板又はリング状円板からなる治具
の外周部に、載置するウェーハとは所要の隙間が形成さ
れる位置に少なくとも１個のピン状支持部を立設するこ
とにより、かつこの落下防止部の熱容量を低減させるこ
とにより、ウェーハの一群を効率良く移載でき、かつス
リップの抑制が可能であることを知見し、この発明を完
成した。We SUMMARY OF THE INVENTION may, for the purpose of transfer time and wafers skid and anti-drop that occurs during heat treatment to the heat treatment furnace, as a result of various investigations on structure of a wafer placing jig A required gap is formed on the outer periphery of the jig made of
That a group of wafers can be efficiently transferred and the slip can be suppressed by erecting at least one pin-shaped support portion at a position where the wafer is to be dropped and by reducing the heat capacity of the fall prevention portion. And completed the present invention.
【0009】すなわち、この発明は、スタックアニール法に
用いる熱処理装置において、一群のウェーハを保持する
円板又はリング状円板からなる治具にウェーハ落下防止
用支持部、例えば治具の外周部に、少なくとも1個のピ
ン状支持部あるいは円弧状支持部を立設したことを特徴
とし、さらにその支持部の熱容量を小さくする手段、例
えば支持部を中空構造としたり、ピン外径を5mm以下、
円弧状支持部の厚みを2mm以下とすることを特徴とする
シリコン単結晶ウェーハの熱処理装置である。That is, the present invention provides a heat treatment apparatus used for a stack annealing method, in which a jig composed of a disk or a ring-shaped disk holding a group of wafers is provided with a wafer drop prevention support portion, for example, an outer peripheral portion of the jig. Characterized in that at least one pin-shaped support portion or an arc-shaped support portion is erected, and further means for reducing the heat capacity of the support portion, for example, the support portion has a hollow structure or the pin outer diameter is 5 mm or less,
A heat treatment apparatus for a silicon single crystal wafer, wherein the thickness of the arc-shaped support portion is 2 mm or less.
【0010】[0010]
【発明の実施の形態】この発明による熱処理装置の一例
を図面に基づいて説明する。図1Aはこの発明による熱処
理方法に使用する熱処理ボートの正面説明図であり、熱
処理ボート1は、上下の一対の下円板2及び上円板3の間
に円筒状の空間を形成するため3本の支柱が円板の略直
径方向の両端に一対とこれに直行する直径方向の一方端
に、それぞれ下円板2及び上円板3の間に両端を固着して
前側支持柱4,5と後側支持柱6とが配置され、前側支持柱
4,5間の開口部からウェーハ7を積載した載置用治具10を
挿入する構成である。DESCRIPTION OF THE PREFERRED EMBODIMENTS An example of a heat treatment apparatus according to the present invention will be described with reference to the drawings. FIG.1A is an explanatory front view of a heat treatment boat used in the heat treatment method according to the present invention, in which a heat treatment boat 1 has a cylindrical space between a pair of upper and lower lower disks 2 and an upper disk 3 to form a cylindrical space. A pair of struts are attached to a pair of substantially diametrical ends of the disc and one end in a diametric direction perpendicular to the pair, and both ends are fixed between the lower disc 2 and the upper disc 3, respectively, so that the front support columns 4, 5 And the rear support column 6 are arranged, and the front support column
This is a configuration in which a mounting jig 10 on which a wafer 7 is loaded is inserted from an opening between 4 and 5.
【0011】載置用治具10は、図1A,Bに示すごとく、載置す
るウェーハ7より大径の円板からなり、その直行する2直
径の4つの外周端位置にそれぞれウェーハ滑り防止のた
めに支持ピン11を立設して、支持ピン11間の内径が該ウ
ェーハ7より若干大きい寸法に設定されている。As shown in FIGS. 1A and 1B, the mounting jig 10 is formed of a disk having a diameter larger than that of the wafer 7 to be mounted, and is provided at four outer peripheral end positions of two diameters perpendicular to the wafer 7 to prevent wafer slip. For this purpose, the support pins 11 are erected, and the inner diameter between the support pins 11 is set to be slightly larger than the wafer 7.
【0012】前記載置用治具10は、高温強度に優れた材質、
例えばSi含浸SiC、CVD‐SiC、セラミックス等の円板に
て形成されるが、図2A,Bに示す載置用治具20のごとく、
同様材質のリング状の円板にて構成することも可能であ
る。また、小径の円柱状支持ピン11はウェーハ滑り防止
のために少なくとも2本以上で構成するが、円板に一体
化された構成、あるいは円板上に脱着可能な分割構造で
もよい。The mounting jig 10 is made of a material having excellent high-temperature strength,
For example, Si-impregnated SiC, CVD-SiC, formed of a disk of ceramics, etc., like the mounting jig 20 shown in FIGS.
It is also possible to use a ring-shaped disk made of the same material. In addition, the small-diameter cylindrical support pins 11 are composed of at least two or more to prevent the wafer from slipping, but may have a configuration integrated with a disk or a divided structure detachable on the disk.
【0013】載置用治具10上には所要枚数のウェーハ7が積
層載置されて一群とされ、熱処理ボート1内に、図では
水平に5群、すなわち5枚の載置用治具10が所定間隔で垂
直方向にスタック配置可能なように、前側支持柱4,5と
後側支持柱6に各々棚部8が突設配置されている。A required number of wafers 7 are stacked and mounted as a group on a mounting jig 10, and five groups, that is, five mounting jigs 10 Each of the front support columns 4, 5 and the rear support column 6 is provided with a ledge 8 so as to protrude from the front support columns 4, 5 and the rear support column 6 so that the vertical stack can be arranged at predetermined intervals.
【0014】図1の熱処理ボート1は、この5枚の載置用治具1
0を搭載して5群の積層載置された多数のウェーハ7を収
納しており、所定の熱処理炉に投入されて一度に大量の
ウェーハに均等な熱処理を施すことができる。[0014] The heat treatment boat 1 of FIG.
A large number of wafers 7 stacked and mounted in five groups with 0 mounted thereon are housed in a predetermined heat treatment furnace, and a large number of wafers can be subjected to uniform heat treatment at once.
【００１５】また、前記載置用治具１０は、積み重ねた
ウェーハを熱処理する場合、横滑りしたウェーハ７は支
持ピン１１からなる支持部に接触するが、熱処理工程で
両者間で温度差が生じるためにウェーハ内にスリップが
発生する。従って、支持部材はウェーハと同材料である
シリコンが最も好ましい。[0015] Before wherein置用jig 10, when heat-treating the wafer stack, although the wafer 7 was skid in contact with the support portion consisting of the support pin 11, the temperature difference occurs between them in the heat treatment step Then, a slip occurs in the wafer . Therefore, the support member is most preferably made of the same material as the silicon.
【0016】さらに、SiC材質等を用いた場合でも、支持部
とウェーハ接触部の温度差を極力低減させるために支持
部材の熱容量を低減させた構造を採用するとよい。例え
ば、図3Bに示すソリッドな支持ピン11に対して、図3Cに
示す中空構造の円柱からなる支持ピン12の構成が採用で
きる。[0016] Even when a SiC material or the like is used, a structure in which the heat capacity of the supporting member is reduced to minimize the temperature difference between the supporting portion and the wafer contacting portion may be employed. For example, for the solid support pin 11 shown in FIG. 3B, the configuration of the support pin 12 formed of a hollow cylindrical column shown in FIG. 3C can be adopted.
【0017】図4に示す載置用治具30は、そのウェーハの支
持部が2つの円弧状支持部13でほぼ円を形成するように
構成されているが、この他、ウェーハエッジ対向面部分
が円弧状で、小さな支持ピンのような1つの支持部とす
ることも可能である。また、図5に示す載置用治具30
は、そのウェーハの支持部が薄肉のリング状支持部14に
て構成されている。The mounting jig 30 shown in FIG. 4 is configured such that the support portion of the wafer substantially forms a circle by the two arc-shaped support portions 13. Can be a single support such as a small support pin. Further, the mounting jig 30 shown in FIG.
The support portion of the wafer is constituted by a thin ring-shaped support portion.
【0018】上述の各支持部の熱容量を小さくする手段とし
ては、前記の支持部を中空構造とする、かかる支持ピン
11,12の外径を極力小さく、あるいは支持部の厚みを極
力小さく薄くするなどの手段を採用でき、スリップを抑
制することが可能であり、例えば支持ピンの外径は5mm
以下、円弧状支持部の厚みは2mm以下が好ましい。As means for reducing the heat capacity of each of the above-mentioned support portions, a support pin having a hollow structure may be used.
Means such as minimizing the outer diameter of 11, 12 or the thickness of the support part as small as possible can be adopted, and it is possible to suppress slip, for example, the outer diameter of the support pin is 5 mm
Hereinafter, the thickness of the arc-shaped support portion is preferably 2 mm or less.
【0019】[0019]
【実施例】実施例1 図3Cに示すように載置用治具10の円板上、すなわち厚み
1.5mmからなる直径220mmの円板上の中央から半径103mm
の位置に直径5mmからなる中空の円柱状、支持ピン12を
各90°間隔に4本設置させた一体型構造を用いた。また
図3Bに示す同円板上に直径5mmからなる中空でない円柱
棒を同じように4本設置させた一体構造の載置用治具も
用いた。EXAMPLE 1 As shown in FIG. 3C, the thickness of the mounting jig 10
A radius of 103 mm from the center on a 220 mm diameter disk made of 1.5 mm
At a position, a hollow cylindrical shape having a diameter of 5 mm, and an integrated structure in which four support pins 12 are installed at 90 ° intervals. In addition, a mounting jig having an integral structure in which four non-hollow cylindrical rods each having a diameter of 5 mm were similarly installed on the same disk shown in FIG. 3B was also used.
【0020】治具円板上にCZ法により育成された直径200m
m、酸素濃度13〜15×1017atoms/cm3[oldASTM]のシリコ
ンインゴットを丸目加工し、その後スライス加工を施
し、さらにフッ酸・硝酸混合水溶液にて表面をエッチン
グしたシリコン単結晶ウェーハを10枚積み重ねた。[0020] 200m diameter grown on the jig disk by CZ method
m, a silicon ingot having an oxygen concentration of 13 to 15 × 10 17 atoms / cm 3 [oldASTM] is rounded, then sliced, and the surface is etched with a mixed solution of hydrofluoric acid and nitric acid. Stacked.
【0021】この一群をロボットにより熱処理ボートに移載
後、酸素・アルゴン混合ガス雰囲気下で1300℃、2時間
の熱処理を施した。熱処理終了後、ロボッ卜にて回収し
た。一連の熱処理工程でウェーハ落下等は全く観察され
なかった。After this group was transferred to a heat treatment boat by a robot, heat treatment was performed at 1300 ° C. for 2 hours in an oxygen / argon mixed gas atmosphere. After completion of the heat treatment, it was collected by a robot. No wafer drop was observed at all in the series of heat treatment steps.
【0022】また、熱処理後のウェーハをX線トポグラフに
てスリップ観察を実施したが、積層した最下層部のダミ
ーウェーハのみに多数スリップが観察された。また支持
ピンに接触した領域でもスリップは観察されない場合が
多く、スリップが発生しても数ミリ程度のものが生じて
いるだけであり、他の積層ウェーハにはスリップは観察
されなかった。Slip observation of the wafer after the heat treatment was performed by an X-ray topograph, but a large number of slips were observed only in the laminated lowermost dummy wafer. In many cases, no slip was observed even in the region in contact with the support pins. Even if a slip occurred, only a few millimeters were generated, and no slip was observed in other laminated wafers.
【0023】実施例2 図4に示すように載置用治具30の円板上、すなわち厚み
1.5mmからなる直径220mmのリング状円板に厚み1.5mmの
円弧状支持部13をリングの中央から半径102mmの位置に2
個設置させた分割式構造を用い、その上に実施例1と同
様にウェーハを10枚積み重ねて熱処理を施した。この場
合も一連の熱処理工程でウェーハ落下等は全く観察され
なかった。Example 2 As shown in FIG. 4, the thickness of the mounting jig 30
An arc-shaped support 13 with a thickness of 1.5 mm is placed on a ring-shaped disk with a diameter of 220 mm consisting of 1.5 mm at a radius of 102 mm from the center of the ring.
Using a split type structure in which individual wafers were installed, ten wafers were stacked thereon and heat-treated as in Example 1. Also in this case, no drop of the wafer or the like was observed at all in the series of heat treatment steps.
【００２４】また、熱処理後のウェーハをＸ線トポグラ
フにてスリップ観察を実施したところ、実施例１の中空
でない支持ピンの場合は、支持ピンとの接触場所で数セ
ンチのスリップが複数本生じていたが、実施例２の場合
は、半円弧部の厚みを薄くしているため接触部でのスリ
ップが発生した場合は数ミリ程度であった。When the wafer after the heat treatment was subjected to slip observation by an X-ray topograph, in the case of the solid support pin of Example 1, a plurality of slips of several centimeters were generated at the contact position with the support pin. but in the case of example 2, a slip at the contact portion since the reduced thickness of the semicircular arc portion was several millimeters if occurred.
【0025】実施例3 図5に示す載置用治具30の円板上に、すなわち厚み1.5mm
からなる直径220mmのリング状円板に厚み5mmのリング状
支持部14に設置し、その上に実施例1と同様にウェーハ
を10枚積み重ね上記熱処理を施した。この場合も一連の
熱処理工程でウェーハ落下等は全く観察されなかった。Example 3 On the disk of the mounting jig 30 shown in FIG.
Was mounted on a ring-shaped support portion 14 having a thickness of 5 mm on a ring-shaped circular plate having a diameter of 220 mm, and ten wafers were stacked thereon in the same manner as in Example 1 and subjected to the above heat treatment. Also in this case, no drop of the wafer or the like was observed at all in the series of heat treatment steps.
【0026】比較例 支持部を全く設けない厚み1.5mmからなる直径220mmのリ
ング状円板上に積み重ね作業を実施した。移載する毎に
ウェーハ間で横滑りが生じ10枚積み重ねるまでにかなり
の時間を要した。また、この積み重ねウェーハをロボッ
トにて熱処理炉に投入、熱処理終了後に炉内からウェー
ハを取り出す際、積み重ねウェーハ一群の上部ウェーハ
の数枚が横滑りしボート開口部側の支持溝に接触してい
た。Comparative Example A stacking operation was performed on a ring-shaped disk having a thickness of 1.5 mm and a diameter of 220 mm without any supporting portion. Each time the wafer was transferred, a side slip occurred between the wafers, and it took a considerable amount of time to stack ten wafers. In addition, when the stacked wafers were loaded into a heat treatment furnace by a robot and the wafers were taken out of the furnace after the heat treatment, some of the upper wafers in the group of stacked wafers slid and contacted the support grooves on the boat opening side.
【0027】また、熱処理後のウェーハをX線トポグラフに
てスリップ観察を実施したところ、実施例3及び従来例
では支持部あるいは支持溝部に接触した領域には数セン
チのスリップが多発していた。Further, when the slip of the heat-treated wafer was observed by an X-ray topograph, slips of several centimeters frequently occurred in the region in contact with the support portion or the support groove portion in Example 3 and the conventional example.
【0028】[0028]
【発明の効果】この発明による熱処理装置は、ウェーハ
を複数枚積層してこの一群を単位として水平に熱処理ボ
ートに載置し、さらに多段に複数群をスタック配置して
熱処理するもので、載置用治具にウェーハ落下防止用支
持部を設けて、実施例の如く効率よくウェーハを移載で
き、また一連の熱処理工程でウェーハ落下防止及びスリ
ップ発生を抑制できる。According to the heat treatment apparatus of the present invention, a plurality of wafers are stacked, and a group of these wafers is horizontally mounted on a heat treatment boat, and a plurality of groups are stacked and arranged in multiple stages for heat treatment. The wafer jig is provided with a support for preventing the wafer from falling, so that the wafer can be efficiently transferred as in the embodiment, and the wafer can be prevented from falling and the occurrence of slip can be suppressed in a series of heat treatment steps.
【図1】Aはこの発明による熱処理方法に使用する熱処理
ボートの正面説明図、BはAの矢印線における横断説明図
である。FIG. 1A is a front view of a heat treatment boat used in a heat treatment method according to the present invention, and FIG.
【図2】Aはこの発明による熱処理装置に使用する治具の
上面説明図、Bは縦断説明図である。FIG. 2A is an explanatory top view of a jig used in the heat treatment apparatus according to the present invention, and FIG. 2B is an explanatory longitudinal sectional view.
【図3】Aはこの発明による熱処理装置に使用する他の治
具の上面説明図、Bは縦断説明図、Cは他の縦断説明図で
ある。FIG. 3A is an explanatory top view of another jig used in the heat treatment apparatus according to the present invention, FIG. 3B is a longitudinal sectional view, and C is another longitudinal sectional view.
【図4】この発明による熱処理装置に使用する他の治具
の上面説明図である。FIG. 4 is an explanatory top view of another jig used for the heat treatment apparatus according to the present invention.
【図5】熱処理装置に使用する比較例の治具の上面説明
図である。FIG. 5 is an explanatory top view of a jig of a comparative example used for a heat treatment apparatus.
1 熱処理ボート 2 下円板 3 上円板 4,5 前側支持柱 6 後側支持柱 7 ウェーハ 8 棚部 10,20,30 載置用治具 11,12 支持ピン 13 円弧状支持部 14 リング状支持部 1 Heat treatment boat 2 Lower disk 3 Upper disk 4,5 Front support column 6 Rear support column 7 Wafer 8 Shelf 10,20,30 Mounting jig 11,12 Support pin 13 Arc-shaped support 14 Ring shape Support
───────────────────────────────────────────────────── フロントページの続き (72)発明者 森本 信之 佐賀県杵島郡江北町大字上小田2201番地 住友金属工業株式会社 シチックス事 業本部内 (56)参考文献 特開 平10−74771（ＪＰ，Ａ) 特開 平９−298164（ＪＰ，Ａ) 特開 平６−268048（ＪＰ，Ａ) 特開 平８−335583（ＪＰ，Ａ) 実開 昭55−62042（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/205 H01L 21/22 - 21/24 H01L 21/26 - 21/268 H01L 21/31 H01L 21/3105 - 21/314 H01L 21/316 H01L 21/318 - 21/32 H01L 21/322 - 21/326 H01L 21/68 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Nobuyuki Morimoto, Inventor 2201 Kamidada, Kokita-cho, Kishima-gun, Saga Prefecture Sumitomo Metal Industries, Ltd. Sitix Business Division (56) References JP-A-10-74771 JP-A-9-298164 (JP, A) JP-A-6-268048 (JP, A) JP-A-8-3335583 (JP, A) Japanese Utility Model Laid-Open No. 55-62042 (JP, U) (58) Field (Int.Cl. 7 , DB name) H01L 21/205 H01L 21/22-21/24 H01L 21/26-21/268 H01L 21/31 H01L 21/3105-21/314 H01L 21/316 H01L 21 / 318-21/32 H01L 21/322-21/326 H01L 21/68
Claims (4)
枚以上積層して一群となし、一群以上のシリコン単結晶
ウェーハを垂直方向にスタック配置し、前記一群のウェ
ーハを水平もしくは一方側を水平より上方へ傾斜させ
て、熱処理するシリコン単結晶ウェーハの熱処理方法に
用いる熱処理装置において、上記一群を保持する円板又
はリング状円板からなる載置用治具の外周部でかつウェ
ーハとは隙間を形成するようウェーハの載置予定位置の
外側に、少なくとも１個のピン状又は円弧状のウェーハ
落下防止用支持部を設け、該支持部がその熱容量を小さ
くする手段を備えたシリコン単結晶ウェーハの熱処理装
置。At least two silicon single crystal wafers are provided.
A heat treatment of a silicon single crystal wafer in which one or more silicon single crystal wafers are stacked vertically and the one or more groups of wafers are horizontally or one side tilted upward from the horizontal to perform a heat treatment. In the heat treatment apparatus used in the method, the outer periphery of the mounting jig made of a disk or a ring-shaped disk holding the group and
The wafer is positioned at the position where the wafer is to be placed so that a gap is formed.
At least one pin-shaped or arc-shaped wafer drop prevention support is provided on the outside , and the support reduces the heat capacity.
The heat treatment apparatus of a silicon single crystal wafer having a Kusuru means.
あるシリコン単結晶ウェーハの熱処理装置。2. The heat treatment apparatus according to claim 1, wherein the supporting portion has a hollow structure.
下であるシリコン単結晶ウェーハの熱処理装置。3. The apparatus according to claim 1, wherein the pin has an outer diameter of 5 mm or less.
が２ｍｍ以下であるシリコン単結晶ウェーハの熱処理装
置。4. The heat treatment apparatus for a silicon single crystal wafer according to claim 1, wherein the thickness of the arc-shaped support portion is 2 mm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31585798A JP3214558B2 (en) | 1998-11-06 | 1998-11-06 | Heat treatment equipment for silicon single crystal wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31585798A JP3214558B2 (en) | 1998-11-06 | 1998-11-06 | Heat treatment equipment for silicon single crystal wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000150523A JP2000150523A (en) | 2000-05-30 |
| JP3214558B2 true JP3214558B2 (en) | 2001-10-02 |
Family
ID=18070431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31585798A Expired - Fee Related JP3214558B2 (en) | 1998-11-06 | 1998-11-06 | Heat treatment equipment for silicon single crystal wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3214558B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102596522A (en) * | 2009-05-29 | 2012-07-18 | 施米德科技系统有限责任公司 | Device and method for stacking or transporting a plurality of flat substrates |
| KR102191584B1 (en) * | 2018-01-19 | 2020-12-15 | 엘지전자 주식회사 | Air purifier |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7393561B2 (en) | 1997-08-11 | 2008-07-01 | Applied Materials, Inc. | Method and apparatus for layer by layer deposition of thin films |
| US20050188923A1 (en) * | 1997-08-11 | 2005-09-01 | Cook Robert C. | Substrate carrier for parallel wafer processing reactor |
| JP4683332B2 (en) * | 2005-12-28 | 2011-05-18 | 株式会社Ｉｈｉ | Heat treatment equipment |
-
1998
- 1998-11-06 JP JP31585798A patent/JP3214558B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102596522A (en) * | 2009-05-29 | 2012-07-18 | 施米德科技系统有限责任公司 | Device and method for stacking or transporting a plurality of flat substrates |
| KR102191584B1 (en) * | 2018-01-19 | 2020-12-15 | 엘지전자 주식회사 | Air purifier |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000150523A (en) | 2000-05-30 |
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