JP3202974B2 - Apparatus and method for forming thin film of metal compound - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for forming a thin film of a metal compound and a method for forming the thin film, and more particularly to an apparatus capable of forming a thin film at a high film forming rate and having an abnormal discharge on a substrate and a target. The present invention relates to an apparatus and a method for forming a thin film of a metal compound by sputtering, in which the occurrence of a thin film is difficult.

[0002]

2. Description of the Related Art Conventionally, in order to design optical spectroscopic characteristics required for a certain optical thin film product group, it has been attempted to design an optical thin film using a limited substance in the natural world. . For example, in order to form a wide band antireflection film, a non-deflection filter, or the like, it is necessary to use a material having an intermediate refractive index (between 1.46 and 2.20) which hardly exists in the natural world. . Taking glass as an example, in order for the reflectance of glass to be low throughout the visible light region, it has a refractive index generally called an intermediate refractive index in the range of 1.46 to 2.20. Evaporation materials are required. The following techniques are known for obtaining the above intermediate refractive index.

[0003] That is, a low refractive index material such as SiO
₂ (refractive index: 1.46)} and a high refractive index material {for example, Ti
O ₂ (refractive index 2.35)} are simultaneously evaporated from different evaporation sources, and the intermediate refractive index (1.
46 to 2.35), a technique of mixing a low-refractive-index material and a high-refractive-index material and simultaneously evaporating them from one evaporation source to obtain an intermediate refractive index by the mixing ratio, and a technique of using a composite target material in sputtering. , Etc.

However, these techniques make it difficult to control the refractive index, and it is difficult to obtain a stable quality product. Further, as a technique for obtaining the intermediate refractive index, an equivalent film technique for obtaining an intermediate refractive index equivalently by combining a low refractive index material and a high refractive index material is also known. The disadvantage is that the number of layers increases and the productivity is low. Further, a technique for obtaining an intermediate refractive index by IBS is also known, but this technique has a drawback that the film formation rate is low and the productivity is low. Therefore, the present inventors have proposed a technique of obtaining a metal compound thin film that can control the refractive index arbitrarily and have stable optical characteristics, as a low refractive index material {for example, SiO ₂ (refractive index: 1.46)}. And a high-refractive-index material {for example, Nb ₂ O ₅ (refractive index 2.25), Ta ₂ O ₅ (refractive index 2.15)} are sputtered on a substrate to form an ultrathin film made of a metal mixture. After the formation, an active species of a reactive gas such as oxygen is introduced into the ultra-thin film, and the step of reacting the ultra-thin film with the active species of the reactive gas to convert it into a compound of a metal mixture is repeated. A technique for forming a compound thin film of a thick metal mixture on a substrate has been developed.

However, according to this technique, when a reactive gas such as oxygen enters the sputtering zone of each target, an abnormal discharge (arc) occurs, and the abnormal discharge causes a "drop" on the film formed on the substrate. There is an inconvenience that a defect such as a “dot” occurs. Defective films do not have product value, and abnormal discharge reduces product yield. Here, “missing” refers to a hole opened on the surface of the film due to abnormal discharge. Further, the "pop" refers to a particle-like projections that can be on the surface of the membrane by abnormal discharge. Conventionally, in order to prevent such abnormal discharge, shielding plates 31, 51, 75 are provided between the film forming process chambers 20, 40 and the reaction process chamber 60, and the substrate is held by an electrically insulated substrate holder 13. Although it was configured, abnormal discharge was still frequently occurring.

[0006]

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned disadvantages of the prior art, and an object of the present invention is to allow the refractive index to be arbitrarily controlled and to improve the optical characteristics and mechanical characteristics. In sputtering technology that can obtain a stable metal compound thin film, it prevents abnormal discharge caused by reactive gas such as oxygen entering the sputtering zone of each target, and thin film without defects such as "dropout" and "bottom" It is an object of the present invention to provide a metal compound thin film forming apparatus and a thin film forming method capable of obtaining a thin film.

[0007]

According to the first aspect of the present invention, there is provided a vacuum chamber provided with a target,
An exhaust pump connected to the vacuum chamber, wherein a film forming process chamber and a reaction process chamber are formed in the vacuum chamber, and the film forming process chamber and the reaction process chamber are formed. Is partitioned by a shielding plate, and the exhaust pump is disposed between the film forming process chamber and the reaction process chamber, and the pressure in the film forming process chamber is
Is higher than the pressure in the reaction process chamber.
The problem is solved by providing a possible pressure control means .

At this time, in the film forming process chamber, an operating gas is introduced into the film forming process chamber, the target made of metal is sputtered, and an ultra-thin film made of metal or an incomplete reactant of metal is formed on a substrate. Alternatively, it is preferable to form a discontinuous thin film.

Further, in the reaction process chamber by introducing activated species of the reactive gas into the reaction process chamber, the active species of the film deposition process chamber formed by the ultra-thin film or the discontinuous film and the reactive gas And converting the ultra-thin film or the discontinuous thin film into a metal compound.

It is preferable that the target contains at least two kinds of different metals. Further, the target may be composed of a plurality of targets, and the plurality of targets may be configured to have different compositions. Further, the film forming process chamber may be constituted by a plurality.

Preferably, the exhaust pump is connected to the vacuum chamber by an exhaust port, and an adjusting plate for preventing the degree of vacuum in the vacuum chamber from being spatially non-uniform is disposed in the exhaust port. It is. The adjusting plate may be configured as a rotary conductance valve.

[0012] The above object is achieved according to the invention of claim 9, an exhaust step of exhausting the vacuum chamber from an exhaust pump disposed between the film deposition process chamber and the reaction process chamber, wherein
The pressure in the film forming process chamber is changed to the pressure in the reaction process chamber.
A pressure setting step of setting a pressure higher than the force, and introducing an operating gas into the film forming process chamber, sputtering a metal target, and forming an ultra-thin or non-thin film of a metal or an incompletely reacted metal on a substrate. a thin film forming step of forming a continuous film, introducing the activated species of the reactive gas to the ultra-thin film or the discontinuous film is formed by thin film formation step, said the active species ultra thin film or said discontinuous film Is converted to a metal compound by reacting the metal compound with a metal compound thin film on the substrate.

In the thin film forming step, a plurality of targets each having a different composition are sputtered,
It is preferable to form a compound thin film of a metal mixture having a desired thickness and physical properties on a substrate. In the thin film forming step, it is preferable that the target including at least two kinds of different metals is sputtered to form a compound thin film of a metal mixture having a desired thickness and physical properties on the substrate.

[0014]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An apparatus for forming a thin film of a metal compound according to the present invention includes targets 29 and 49, a vacuum chamber 11, and an exhaust pump 82 connected to the vacuum chamber 11. The film forming process chambers 20 and 40 and the reaction process chamber 60 are formed in the vacuum chamber 11 of the present invention. Film forming process chambers 20 and 4
0 and the reaction process chamber 60, the shielding plates 31, 51, 75
Partitioned by Thus, the film forming process chambers 20 and 40
By partitioning the reaction process chamber 60 and the reaction process chamber 60 with shielding plates 31, 51, and 75, it is possible to prevent the reactive gas (eg, oxygen gas) in the reaction process chamber 60 from flowing into the film formation process chambers 20 and 40. Becomes possible, and target 2
Abnormal discharge due to the formation of a metal compound with the reactive gas on the surfaces of the substrates 9 and 49 can be prevented.

An exhaust pump 82 is provided between the film forming process chambers 20 and 40 and the reaction process chamber 60.
As described above, the exhaust pump 82 is connected to the film forming process chambers 20 and 4.
0 and the reaction process chamber 60,
Reactive gas is less likely to enter the film forming process chambers 20 and 40 than in a conventional apparatus in which an exhaust pump is provided below the vacuum chamber 11, and the number of times of abnormal discharge can be reduced.

In the film forming process chambers 20 and 40, an operating gas is introduced into the film forming process chambers 20 and 40, and targets 29 and 49 made of metal are sputtered to form a metal or an incomplete reactant of metal on the substrate. A step of forming an ultra-thin or discontinuous thin film is performed.

In the reaction process chamber 60, an active species of a reactive gas is introduced into the reaction process chamber 60, and the ultra-thin or discontinuous thin film formed in the film forming process chambers 20 and 40 is mixed with the active species of the reactive gas. And converting the ultrathin or discontinuous thin film into a metal compound. here,
The active species of the reactive gas refer to radicals, ions and the like of the reactive gas.

[0018] At least two targets 29 and 49
Including the above dissimilar metals. In addition, targets 29 and 49
Consists of a plurality of targets 29 and 49
May have different compositions.
No. The film forming process chambers 20 and 40 include a plurality.

The exhaust pump 82 is connected to the vacuum chamber 11 through an exhaust port 83. An adjusting plate 84 for preventing the degree of vacuum in the vacuum chamber 11 from becoming spatially non-uniform is disposed in the exhaust port 83. By providing the adjusting plate 84 in this way, it is possible to prevent the pressure in the vacuum chamber 11 from being extremely different between a position near the exhaust pump 82 and a position far from the exhaust pump 82. Further, instead of providing the plate-shaped adjustment plate 84, a configuration may be adopted in which a rotary conductance valve 86 is provided.

[0020]

An embodiment of the present invention will be described below with reference to the drawings. The members, arrangements, and the like described below do not limit the present invention, and can be variously modified within the scope of the present invention.

FIGS. 1 and 2 are explanatory views showing a method and an apparatus for forming a thin film according to the present invention. FIG. 1 is a top view (partially sectioned for easy understanding), and FIG. It is a side view along BC.

The thin film forming apparatus S of this embodiment comprises a vacuum chamber 11 and
A film forming process chamber 20, 40, a reaction process chamber 60,
Shielding plates 31, 51, 75 and transport means (substrate holder 13)
And its driving means 17) and the reactive gas introducing means 61
, An exhaust pump 92, and an adjusting plate 84 for adjusting the exhaust speed are main components.

The vacuum chamber 11 of this embodiment is composed of a closed hollow container, and its shape is not limited. In the center of the vacuum chamber 11, a substantially cylindrical substrate holder 13 is provided as a substrate transfer means so as to be rotatable at a predetermined speed. In the vacuum chamber 11, around the substrate holder 13, film forming process chambers 20, 40 and a reaction process chamber 60 are provided.

Each of the film forming process chambers 20 and 40 is independently surrounded by shielding plates 31 and 51, and includes one target 29, that is, two targets 29 in total.

The two film forming process chambers 20 and 40 of this embodiment are formed at two positions facing each other with the substrate holder 13 interposed therebetween. These film forming process chambers 20 and 40
Is surrounded by shielding plates 31 and 51 and is shielded in a predetermined range.

The shielding plates 31 and 51 allow the vacuum chamber 11
Reaction process chamber 60 and film forming process chambers 20 and 40
Form a separate space in a vacuum atmosphere. That is, although the inside of the vacuum chamber 11 is not completely separated, it is almost independent, and forms a reaction process chamber 60 that can be controlled independently and film forming process chambers 20 and 40.

Therefore, these reaction process chambers 60
And the respective film forming process chambers 20 and 40 are in a state where the influence is mutually suppressed as much as possible, and the optimum condition setting for the respective chambers 20, 40 and 60 can be performed. Preferably, the pressure in each of the film forming process chambers 20 and 40 is set higher than the pressure in the reaction process chamber 60.

By doing so, it is possible to prevent the reactive gas (for example, oxygen gas) in the reaction process chamber 60 from flowing into the film formation process chambers 20 and 40, and Abnormal discharge due to the formation of the metal compound can be prevented. For example, the pressure (degree of vacuum) of each of the film forming process chambers 20 and 40 is:
0.8 to 10 × 10 ⁻³ Torr is preferable, and the pressure (degree of vacuum) of the reaction process chamber 60 described later is 0.5 to 8 ×.
10 ⁻³ Torr is preferred, and among these conditions,
Pressure in each of the film forming process chambers 20 and 40> Reaction process chamber 6
The condition is a pressure of 0.

Further, the shielding plates 31 and 51 may be extended to a position opposite to the exhaust port 83 side. With such a configuration, the range in which the metal emitted from the sputtering electrodes 21 and 41 scatters can be narrowed, so that the range in which the inside of the vacuum chamber 11 is contaminated with the metal compound can be narrowed.

The film forming process chamber 20 of the shielding plates 31 and 51
The wall surface on the 40 side is aluminum sprayed. By doing so, the shielding plate 3 is formed by sputtering.
It is possible to make it difficult for the sputtered metal material adhering to the wall surfaces of the film forming process chambers 20 and 40 on the sides 1 and 51 to be separated during the film forming process. In addition, the shielding plates 31 and 51 of the present example are configured so that a copper pipe is wound therearound and cooling water flows through the pipe. When performing sputtering, the shielding plates 31 and 51 are kept at 20 ° C.
Cool to about 30 ° C. Thus, the shielding plate 3
By cooling the first and the first, the radiant heat from the shielding plates 31 and 51 is hardly transmitted to the substrate. As a result, sputtering can be performed at a lower temperature.

The film forming process chambers 20 and 40 are provided with sputtering electrodes 21 and 41, respectively.
The front surfaces of the sputtering electrodes 21 and 41 each constitute a sputtering thin film forming portion.

Then, in the film forming process chambers 20 and 40,
A sputtering gas such as argon is introduced from the sputtering gas cylinders 27 and 47 through the mass flows 25 and 45, respectively, to adjust the sputtering atmosphere, and sputtering is performed by applying power from the sputtering power supplies 23 and 43. In this example, a low-refractive index material is used as the target 29, and an example thereof is Si. Also, a high refractive index material is used as the target 49, for example, Ti, Zr,
Ta, Nb, and the like.

The reaction process chamber 60 of this embodiment is provided with a radical source for introducing active species of a reactive gas and a grid 62. In this example, the radical source is the active species introducing device 61.
And the grid 62 has a multi-aperture
A grid or multi-slit grid is used.

As the radical source in this embodiment, an inductive coupling type, a capacitive coupling type, a mixed type including an inductive coupling and a capacitive coupling type having electrodes provided outside or inside the radical generating chamber (active species introducing device 61) may be used. it can.

The active species introducing device 61 of this embodiment is formed by winding an RF (high frequency) coil 65 around an RF (high frequency) discharge chamber 63 formed of a quartz tube, and receives power from a high frequency power source 69 via a matching box 67. (100KHz-40M
Hz high-frequency power) is supplied to the RF coil 65. At this time, a reactive gas such as oxygen is introduced from the reactive gas cylinder 73 through the mass flow 71, and a reactive gas plasma is formed. Examples of the reactive gas include an oxidizing gas such as oxygen and ozone, a nitriding gas such as nitrogen, a carbonizing gas such as methane, and a fluorinating gas such as CF ₄ .

At this time, in order to obtain high-density plasma, 20 to 30
A magnetic field of 0 Gauss is created in the quartz tube. Then, a multi-aperture grid and a multi-slit grid having a large number of small-diameter holes are installed at the joint with the vacuum chamber 11 so that only radicals can be introduced into the reaction process chamber 60.

In the case of the multi-aperture grid, a large number of holes having a diameter of about 0.1 to 3.0 mm are formed in a metal or an insulator, and cooling is performed. In the case of a multi-slit grid, a large number of slits having a width of 0.1 to 1.0 mm are formed in a metal or an insulator.
Cooling is being done.

The grid 62 allows radicals, active radicals, excited radicals, atoms, molecules, and the like in the reaction gas to be selectively introduced into the reaction process chamber 60, and electrons and ions, which are charged particles, Each grid 6
2 and cannot enter the reaction process chamber 60. Thereby, the reaction process chamber 60
Then, the ultrathin metal film is not exposed to the charged particles as described above, but is exposed only to the active species of the electrically neutral reactive gas, reacts and reacts with the metal such as Si + Ta on the substrate. It is converted to a metal mixture compound (SiO ₂ and Ta ₂ O ₅ ).

The reaction process chamber 60 of this embodiment is provided with a shielding plate 75.
Are surrounded by The shield plate 75 allows the reaction process chamber 60 in the vacuum chamber 11 and each of the film formation process chambers 20,
40 forms a separate space in a vacuum atmosphere.

The exhaust pump 82 of this embodiment is provided at a position between the reaction process chamber 60 and the film forming process chambers 20 and 40 as shown in FIG. Exhaust port 8 of exhaust pump 82 of this example
3 is provided on the wall surface of the vacuum chamber 11. With this configuration, the reactive gas is less likely to enter the film forming process chambers 20 and 40 and the number of occurrences of abnormal discharge is reduced, as compared with a conventional apparatus in which an exhaust pump is provided below the vacuum chamber 11. be able to.

As shown in FIG. 1, an adjusting plate 8 for adjusting the exhaust speed from the vacuum chamber 11 is provided at the exhaust port 83 of this embodiment.
4 are provided. As shown in FIG. 3, the adjustment plate 84 of this example is formed of a metal circular plate-like body, and is supported by an adjustment plate shaft 85 fixed to the exhaust port wall. FIG. 3 shows a case where the adjustment plate 84 of this example is adjusted perpendicular to the exhaust direction.

Normally, the adjusting plate 84 is provided obliquely in the exhaust direction of the exhaust port 83. However, the configuration is such that the direction of the adjusting plate 84 can be adjusted to be perpendicular or parallel to the exhaust direction by a screw (not shown). Have been. The adjustment plate 84 is provided to prevent the pressure in the vacuum chamber 11 from being extremely different between a position near the exhaust pump 82 and a position far from the exhaust pump 82.

Further, instead of providing the adjusting plate 84, the exhaust port 83 is provided with a rotary conductance valve 86 for adjusting the exhaust speed from the vacuum chamber 11 as shown in FIGS. You may comprise. As shown in FIGS. 4 and 5, the conductance valve 86 of the present embodiment is provided with two trapezoidal plate-like members 88 fixed radially to the rotating shaft 87. The rotating shaft 87 is rotationally driven by a driving device (motor) 91, and the plate-like body 88 is rotated about the rotating shaft 87.
Are configured to rotate.

In this embodiment, the transport means includes a film forming process chamber 20,
A substrate (not shown) is sequentially and repeatedly transported between a thin film forming section for forming a sputtering thin film corresponding to 40 and a reactive gas radical exposure section by a radical source corresponding to the reaction process chamber 60. is there.

The transfer means of this embodiment will be specifically described. As shown in FIGS. 1 and 2, a substantially cylindrical substrate holder 13 is provided at the center of a vacuum chamber 11 so as to be rotatable at a predetermined speed. Things. That is, the substrate holder 13 is pivotally supported by a bearing (not shown) and is rotatably held in the vacuum chamber 11. The shaft support may be formed in the vacuum chamber 11, or may be formed outside the vacuum chamber 11. And the substrate holder 13
Is connected to an output shaft of a rotation drive device 17 (motor), and is rotated by rotation of the output shaft.

The rotation driving device 17 is configured so that its rotation speed can be controlled. Then, a substrate (not shown) is mounted on the substrate holder 13 and the substrate holder 1 is mounted.
A thin film forming section for forming a sputtering thin film corresponding to the film forming process chambers 20 and 40 by rotating 3;
The substrate is sequentially and repeatedly transported between the reactive process chamber 60 and a reactive gas radical exposure unit by a radical source.

(Specific Example 1) Sputtering conditions and conditions for generating active species of a reactive gas are as follows. (1) Sputtering conditions (Si) Input power: 0 to 2.8 kW Substrate temperature: Room temperature Ar Introduced amount: 300 sccm Substrate holder rotation speed: 100 rpm Ultrathin film thickness: 2 to 6 Å (2) Sputtering conditions (Ta) input Power: 0 to 1.5 kW Substrate temperature: room temperature Ar introduction amount: 200 sccm Substrate holder rotation speed: 100 rpm Thickness of ultrathin film: 1 to 4 angstroms (3) Radical condition (O ₂ ) of reaction gas Input power: 2.0 kW O ₂ introduction amount: 60 sccm

Hereinafter, based on the above sputtering conditions and conditions for introducing the active species of the reactive gas, SiO ₂ and Ta ₂
The present invention will be described in more detail by taking as an example the case of forming a compound thin film of a metal mixture of O ₅ .

By operating an exhaust pump 82 provided between the film forming process chambers 20 and 40 and the reaction process chamber 60,
The inside of the vacuum chamber 11 is evacuated. As shown in FIG. 1, the exhaust ports 83 are provided with an adjusting plate 84 made of a metal circular plate for adjusting the exhaust speed from the vacuum chamber 11. Silicon (Si) is fixed as the target 29,
Argon gas is introduced from the sputtering gas cylinder 27, power is supplied from the sputtering power supply 23, and S
Sputter i. At the same time, tantalum (Ta) is fixed as the target 49, and sputtering gas,
Argon gas is introduced from a cylinder 47, power is supplied from a sputtering power supply 43, and Ta is sputtered.

At this time, the required refractive index is determined by the power ratio supplied to the two magnetron sputtering targets. On the other hand, by introducing oxygen gas from the reaction gas cylinder 73 and driving the active species generator 61, active species (oxygen atoms) of oxygen gas are generated.

The substrate holder 13 on which the substrate is mounted is driven to rotate.
When rotated by the device 17 (motor), the film forming process chamber
20 and 40, the front surface of the sputtering electrode 21
Ultra-thin Si film is formed on the substrate at the sputtering part
Is done. In the next film forming process chambers 20 and 40, the spa
Front side of sputtering electrode 41 (sputtered thin film formation
(Part), an ultra-thin Ta film is formed on the substrate. This metal mixture
The ultra-thin film is placed in front of the reaction process chamber 60 (radical exposure).
Oxidized by the active species of oxygen gas in ₂And T
a₂O₅Into a compound thin film of a metal mixture of

As described above, the substrate holder 1 on which the substrate is mounted
3 to rotate the Si + Ta ultra-thin film and SiO ₂ + Ta ₂
By repeating the conversion of O ₅ , SiO ₂ having a desired film thickness is obtained.
+ Ta ₂ O ₅ thin film can be formed. In this example, the power of the sputtering power supplies 23 and 43 is simultaneously applied to form an ultrathin Si + Ta thin film in the film forming process chambers 20 and 40. After the thin film is formed, a Ta thin film may be formed by turning on the power of the sputtering power supply 43 to form a discontinuous thin film of Si + Ta. At this time, a discontinuous thin film may be formed by forming a Ta thin film and then forming a Si thin film.

The sputtering electrodes 21 and 41 are
The reaction process chamber 60 is surrounded by the shielding plates 31 and 51.
Is surrounded by a shielding plate 75, in which sputtering gas is introduced from 27 and 47 or reactive gas is introduced from a reaction gas cylinder 73, and a reaction process chamber 60 is formed.
The gas is guided to an exhaust system by two exhaust pumps 82 provided between the apparatus and the film forming process chambers 20 and 40. Therefore, the sputtering gas does not enter the shielding plate 75 and the reactive gas does not enter the shielding plates 31 and 51.

Further, the discharge by magnetron sputtering and the discharge of the generation of the active species of the reactive gas can be controlled individually and do not affect each other, so that the discharge can be stably performed and an unexpected accident is caused. High reliability without any. Furthermore, in the reactive gas irradiation device 61, since the substrate is not exposed to plasma, various damages due to charged particles can be eliminated. In the case of the above example, the temperature of the substrate can be controlled to 100 ° C. or less,
The problem of temperature rise caused by the above can also be solved. By setting the substrate temperature to 100 ° C. or lower as described above, it is possible to perform sputtering using a plastic substrate without exceeding the glass transition point.
Therefore, there is no need to worry about deformation of the plastic.

The film structure produced was as follows: (1) substrate / M (λ /
4) / 2H (λ / 2) / L (λ / 4) / Air;
(2) Substrate / G / L (λ / 4) / Air (G is a gradient film).

The refractive index of the intermediate refractive index layer M is

[0057]

(Equation 1)

[0058] have been determined, in the formula, n _m is the refractive index of the intermediate refractive index layer, n _l is the refractive index of the low refractive index layer, n _s is the refractive index of the substrate. The design of the two-layer anti-reflection film is w coat, so-called substrate / 2H (λ / 2) / L (λ / 4) / Ai
r, a common two-layer anti-reflection design.

(Specific Example 2)  FIGS. 6 and 7 show another embodiment of the present invention.
This shows an apparatus for sputtering a plate. Thin in this example
The film forming apparatus S includes a vacuum chamber 11 and a film forming process chamber 20.
a, 20b, 40a, 40b and the reaction process chamber 60
a, 60b and shielding plates 31a, 31b, 41a, 41
b, 75a, 75b, and the transporting means (substrate holder 13 and
Driving means 17), an active species introduction device 61, and an exhaust pump
82a, 82b and an adjusting plate for adjusting the pumping speed
84 as main constituent elements.

The film forming process chambers 20a and 40a and the reaction process chamber 60a are provided above the substrate holder 13 in the vacuum chamber 11 of this embodiment, and the film forming process chambers 20b and 40b and the reaction process chamber 60b are provided below. ing. Film forming process chamber 2
Each of 0a, 20b, 40a, and 40b is independently surrounded by a cylindrical shielding plate 31a, 31b, 51a, and 51b, and two upper and lower parts are formed in total, four in total. These film forming process chambers 20a, 20b, 40a, and 40b have sputtering electrodes 21a, 21b, 41a, and 4 respectively.
1b is arranged.

The reaction process chambers 60a and 60b of the present embodiment
It is surrounded by shielding plates 75a and 75b. The shielding plates 31a, 31b, 51a, 51b and the shielding plate 7
The reaction process chamber 6 in the vacuum chamber 11 is
0a, 60b and the respective film forming process chambers 20a, 20b, 40
a and 40b form separate spaces in a vacuum atmosphere.

As shown in FIGS. 6 and 7, the exhaust pumps 82a and 82b (exhaust ports 83a and 83b) of the present embodiment include reaction process chambers 60a and 60b and film forming process chambers 20a and 20b.
And between the reaction process chambers 60a and 60b and the film formation process chambers 40a and 40b. With this configuration, it becomes difficult for the reactive gas to enter the film forming process chambers 20a, 20b, 40a, and 40b as compared with the conventional apparatus, and the number of times of abnormal discharge can be reduced.

A vacuum chamber 1 is provided at the exhaust ports 83a and 83b of this embodiment.
An adjusting plate 84 shown in FIG. 3 for adjusting the exhaust speed from inside 1 is provided. 4 and FIG.
As shown in (1), a rotary conductance valve 86 for adjusting the exhaust speed from the vacuum chamber 11 may be provided. The conductance valve 86 of this example is
As shown in FIGS. 4 and 5, two trapezoidal plate-like members 88 are fixed to the rotating shaft 87 in a radial manner. The driving device (motor) 91 drives the rotation shaft 87 to rotate, and the plate-like body 88 rotates around the rotation shaft 87.

In this embodiment, the transfer means is a film forming process chamber 20.
a, a thin film forming section for forming a sputtering thin film corresponding to 20b, 40a, 40b, and a reaction process chamber 60a,
A substrate (not shown) is repeatedly conveyed to and from a reactive gas irradiation section by a radical source corresponding to 60b.

The transfer means of this embodiment will be specifically described. As shown in FIGS. 6 and 7, a substantially circular plate-like substrate holder 13 is rotatably arranged at a predetermined speed in the center of a vacuum chamber 11. It is established. That is, the substrate holder 13 is pivotally supported by a bearing (not shown) and is rotatably held in the vacuum chamber 11. Bearing unit may be formed in the vacuum chamber 11 but may be formed outside the vacuum chamber 11. The substrate holder 13 is connected to an output shaft of a rotation driving device 17 (motor), and rotates by the rotation of the output shaft.

The rotation driving device 17 is configured so that its rotation speed can be controlled. A substrate (not shown) is mounted on the upper and lower surfaces of the substrate holder 13, and the substrate holder 13 is rotated to form a sputtering thin film corresponding to the film forming process chambers 20a, 20b, 40a, and 40b. The substrate is sequentially and repeatedly transported between the thin film forming section and the reactive gas irradiation section by the radical source corresponding to the reaction process chambers 60a and 60b. Other configurations of the apparatus for forming a thin film of a compound of a metal mixture according to the present embodiment are the same as those described in the above embodiment and specific example 1.

[0067]

According to the present invention, in a sputtering technique in which a refractive index can be arbitrarily controlled and a metal compound thin film having stable optical characteristics and the like can be obtained, there is provided a method in which a film is formed between a film forming process chamber and a reaction process chamber. co and the exhaust pump is disposed
In addition, the pressure in the deposition process chamber is
Pressure control means that can make the reactive gas harder to enter the film formation process chamber, and the number of abnormal discharges caused by the reactive gas entering the film formation process chamber Can be reduced. Further, by partitioning the the deposition process chamber and reaction process chamber with a shielding plate, can be reactive gas is hardly enters into the film deposition process chamber, abnormalities reactive gas is caused by entering the film deposition process chamber The number of times of discharge can be reduced.

Further, by providing an adjusting plate or a conductance valve for preventing the degree of vacuum in the vacuum chamber from becoming spatially non-uniform in the exhaust port, a position near the exhaust pump in the vacuum chamber and a position far from the exhaust pump are provided. The pressure does not become extremely different from the position, and the pressure in the vacuum chamber can be stabilized at an early stage after the exhaust or the introduction of air is started.

[Brief description of the drawings]

FIG. 1 is an explanatory view of a rotary thin film forming apparatus.

FIG. 2 is a sectional view taken along the line ABC of FIG. 1;

FIG. 3 is an explanatory view showing an adjustment plate provided at an exhaust port of an exhaust pump.

FIG. 4 is a schematic longitudinal sectional view showing a conductance valve provided at an exhaust port of an exhaust pump.

5 is a schematic explanatory view showing a conductance valve provided at an exhaust port of an exhaust pump, and is a schematic transverse sectional view taken along a line FG in FIG. 4;

FIG. 6 is an explanatory plan view of an apparatus for forming a thin film on a flat substrate.

FIG. 7 is an explanatory view of an apparatus for forming a thin film on a flat substrate,
FIG. 7 is an explanatory side view when cut along a line DE in FIG. 6.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 11 Vacuum tank 13 Substrate holder 20, 40, 20a, 20b, 40a, 40b Film-forming process chamber 21, 41, 21a, 21b, 41a, 41b Sputtering electrode 23, 43, 23a, 23b, 43a, 43b Sputtering power supply 25, 45 , 25a, 25b, 45a, 45b Mass flow 27, 47, 27a, 27b, 47a, 47b Sputtering gas cylinder 29, 49, 29a, 29b, 49a, 49b Target 31, 51, 31a, 31b, 51a, 51b, 75
Shielding plate 60, 60a, 60b Reaction process chamber 61 Radical source (radical generation chamber, active species introducing device) 62 Grid (multi-aperture grid, multi-slit grid) 63 High-frequency discharge chamber 65 High-frequency coil 67, 67a, 67b Matching box 69, 69a, 69b High frequency power supply 71, 71a, 71b Mass flow 73, 73a, 73b Reaction gas cylinder 80, 80a, 80b External coil 81 Internal coil 82, 82a, 82b Exhaust pump 83, 83a, 83b Exhaust port 84 Adjustment plate 85 Adjusting plate shaft 86 Conductance valve 87 Rotating shaft 88 Plate 90 Support rod 91 Drive S Thin film forming device

──────────────────────────────────────────────────続 き Continuing on the front page (72) Shinichiro Tax Office 3-2-6 Minamioi, Shinagawa-ku, Tokyo Inside Syncron Co., Ltd. (72) Kazuhiro Endo 3-2-2 Minamioi, Shinagawa-ku, Tokyo (72) Inventor Shigeharu Matsumoto 3-2-6 Minamioi, Shinagawa-ku, Tokyo (56) References JP-A 8-176821 (JP, A) (58) Survey Field (Int. Cl. ⁷ , DB name) C23C 14/00-15/58

Claims (11)

(57) [Claims] 1. An apparatus for forming a thin film of a metal compound, comprising: a vacuum chamber provided with a target; and an exhaust pump connected to the vacuum chamber. chamber is formed, wherein with the film deposition process chamber and said reaction process chamber are partitioned by a shielding plate, and disposing the exhaust pump between the reaction process chamber and the deposition process chamber, the film forming The pressure in the process chamber is
Equipped with pressure control means capable of making the pressure higher than
An apparatus for forming a thin film of a metal compound. 2. In the film forming process chamber, an operating gas is introduced into the film forming process chamber, the target made of metal is sputtered, and an ultrathin film made of metal or an incomplete reactant of metal is formed on a substrate. 2. The metal compound thin film forming apparatus according to claim 1, wherein a step of forming a discontinuous thin film is performed. The method according to claim 3, wherein said reaction process chamber, introducing active species of the reactive gas into the reaction process chamber, the active species of the film deposition process chamber formed by the ultra-thin film or the discontinuous film and the reactive gas preparative reacted the thin film forming apparatus of the ultra-thin film or a metal compound according to claim 2, wherein the discontinuous film and performing the step of converting the metal compound. Wherein said target is a thin film forming apparatus according to claim 1 or 2, wherein the metal compound characterized in that it comprises at least two or more different metals. Wherein said target includes a plurality, said plurality of targets, a thin film forming apparatus according to claim 1 or 2, wherein the metal compound characterized by comprising the different compositions. Wherein said deposition process chamber, a thin film forming apparatus according to claim 1 or 2, wherein the metal compound characterized by comprising a plurality. 7. The exhaust pump is connected to the vacuum chamber by an exhaust port, and an adjusting plate is disposed in the exhaust port to prevent a degree of vacuum in the vacuum chamber from becoming spatially non-uniform. 3. The apparatus for forming a thin film of a metal compound according to claim 1, wherein: 8. An apparatus according to claim 7, wherein said adjusting plate is a rotary conductance valve. 9. Between a film forming process chamber and a reaction process chamber
Exhaust system that exhausts the inside of the vacuum vessel from the exhaust pump provided
AboutThe pressure in the film forming process chamber,
Pressure setting step to make the pressure higher than the pressure of  An operating gas is introduced into the film forming process chamber and is made of metal.
Sputter the target and place a metal or
Ultra-thin or discontinuous thin films composed of incomplete metal reactants
Forming a thin film, and forming the thin film formed in the thin film forming stepSaidUltra thin film orSaidUnfortunate
Introduce active species of reactive gas into continuous thin film, With the active speciesPrevious
Ultra thin film orSaidReact with discontinuous thin film
A conversion step of converting the compound into a compound.
Metal compound thin film formation characterized by being formed on a substrate
Method. 10. The thin film forming step, wherein a plurality of the targets each having a different composition are sputtered to form a compound thin film of a metal mixture having a desired film thickness and physical properties on a substrate. A method for forming a thin film of a metal compound. 11. In the thin film forming step, the target including at least two kinds of different metals is sputtered to form a compound thin film of a metal mixture having a desired film thickness and physical properties on the substrate. 9 or 10
A method for forming a thin film of the metal compound as described above.