JP3196859B2 - Diode on-resistance measurement circuit - Google Patents
Diode on-resistance measurement circuitInfo
- Publication number
- JP3196859B2 JP3196859B2 JP22422492A JP22422492A JP3196859B2 JP 3196859 B2 JP3196859 B2 JP 3196859B2 JP 22422492 A JP22422492 A JP 22422492A JP 22422492 A JP22422492 A JP 22422492A JP 3196859 B2 JP3196859 B2 JP 3196859B2
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- JP
- Japan
- Prior art keywords
- diode
- current
- potential difference
- resistance
- constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Testing Of Individual Semiconductor Devices (AREA)
- Measurement Of Resistance Or Impedance (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ダイオードのオン抵抗
測定回路に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a diode on-resistance measuring circuit.
【０００２】[0002]
【従来の技術】図７は、従来のダイオードのオン抵抗測
定回路図である。図８は、従来のダイオードのオン抵抗
測定を説明する為のダイオード特性図である。図７にお
いて、可変電圧源６の一端がダイオードＤ１のアノード
に、他端が基準電位に、電流測定装置７の一端がダイオ
ードＤ１のカソードに、他端が基準電位に接続されてい
る。2. Description of the Related Art FIG. 7 is a circuit diagram of a conventional diode for measuring the on-resistance. FIG. 8 is a diode characteristic diagram for explaining the conventional on-resistance measurement of a diode. 7, one end of the variable voltage source 6 is connected to the anode of the diode D1, the other end is connected to the reference potential, one end of the current measuring device 7 is connected to the cathode of the diode D1, and the other end is connected to the reference potential.
【０００３】次に、上記従来例の動作を説明する。可変
電圧源６よりダイオードＤ１に順方向電圧を連続的に上
げて印加し、それによってダイオードＤ１に流れる電流
を電流測定装置７で測定し、図８に示すようなダイオー
ドＤ１の順方向の電流−電圧特性を得る。図８におい
て、電圧がＶ1の時の電流値をＩ1とし、電圧がＶ2の時
の電流値をＩ2とすると、ダイオードＤ１のオン抵抗Ｒ
ONは、次式 ＲON＝（Ｖ2−Ｖ1）／（Ｉ2−Ｉ1） により算出して求めていた。Next, the operation of the above conventional example will be described. The forward voltage is continuously increased and applied to the diode D1 from the variable voltage source 6, and the current flowing through the diode D1 is measured by the current measuring device 7, and the forward current of the diode D1 as shown in FIG. Obtain voltage characteristics. In FIG. 8, if the current value when the voltage is V 1 is I 1, and the current value when the voltage is V 2 is I 2 , the on-resistance R
ON was calculated by the following equation: R ON = (V 2 −V 1 ) / (I 2 −I 1 ).
【０００４】[0004]
【発明が解決しようとする課題】このような従来の技術
にあっては、ダイオードＤ１に電流を流すことでダイオ
ードＤ１は自己発熱するが、その電流が大きくなるにつ
れてダイオードＤ１自体の温度は上昇する。それにつれ
てダイオードＤ１のオン抵抗は下がってしまう為、正確
なオン抵抗測定ができないという問題点があった。本発
明は、従来の有するこのような問題点に鑑みてなされた
ものであり、その目的とするところは、所定の動作点に
おいてダイオードの自己発熱の影響を受けず正確にダイ
オードのオン抵抗を測定できるダイオードのオン抵抗測
定回路を提供することである。In such a conventional technique, the diode D1 generates heat by flowing a current through the diode D1, but the temperature of the diode D1 itself increases as the current increases. . As a result, the on-resistance of the diode D1 decreases, so that accurate on-resistance measurement cannot be performed. SUMMARY OF THE INVENTION The present invention has been made in view of such a conventional problem, and has as its object to accurately measure the on-resistance of a diode at a predetermined operating point without being affected by self-heating of the diode. It is an object of the present invention to provide a circuit for measuring the ON resistance of a diode.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するため
に、本発明は、定電流源１から供給される一定電流がバ
イアス電流として順方向に流されるダイオードＤ１と、
前記ダイオードＤ１に並列に接続され、前記ダイオード
Ｄ１の熱応答時定数よりも大きい周波数の既知の微少変
動電流を前記ダイオードＤ１に供給する交流電流源３
と、前記ダイオードＤ１の陽極と前記交流電流源３の間
に接続される第一コンデンサＣ１と、前記ダイオードＤ
１に並列に接続され前記ダイオードＤ１の両端の交流電
位差を測定する交流電位差測定装置２とからなり、前記
微小変動電流の値と前記交流電位差測定装置２の指示と
から前記ダイオードＤ１のオン抵抗を測定することを特
徴とするダイオードのオン抵抗測定回路である。To achieve the above object, the present invention provides a diode D1 in which a constant current supplied from a constant current source 1 flows forward as a bias current;
An alternating current source 3 connected in parallel to the diode D1 and supplying a known minute fluctuation current having a frequency greater than the thermal response time constant of the diode D1 to the diode D1.
A first capacitor C1 connected between the anode of the diode D1 and the AC current source 3;
And an AC potential difference measuring device 2 connected in parallel to 1 to measure the AC potential difference between both ends of the diode D1. The on-resistance of the diode D1 is determined from the value of the minute fluctuation current and the instruction of the AC potential difference measuring device 2. It is a circuit for measuring the on-resistance of a diode, which is characterized by measuring.
【０００６】[0006]
【作用】このような本発明では、定電流源１から一定の
直流のバイアス電流がダイオードＤ１に流れると、ダイ
オードＤ１の動作点が定められ、またダイオードＤ１の
温度は一定に保たれる。ここでコンデンサＣ１を介して
交流電流源３から既知の振幅を持った交流電流がダイオ
ードＤ１に重畳されると、ダイオードＤ１の両端に交流
電流に対応した交流電位差が生じる。従って交流電流源
の周波数をダイオードＤ１の熱応答時定数に対して十分
大きく設定すれば、ダイオードＤ１の温度上昇によるオ
ン抵抗の減少は無視できるものとなり、所定の動作点に
おけるダイオードＤ１のオン抵抗は、交流電流の振幅と
交流電位差測定装置２で測定されるダイオードＤ１の両
端の交流電位差の振幅とから正確に求められる。上記の
ダイオードの熱応答時定数について説明する。半導体ダ
イオードに通電すると接合部等で電力消費が起こり、自
己発熱による温度上昇で電流が多く流れるようになり、
図８に示した電流―電圧特性が同一の電圧に対する電流
が高くなる方向、即ち電圧が低くなる方向に平行移動す
るため、、電流と電圧の傾きが特性が平行移動いない正
常な場合と比較して大きくなる、即ち正常な場合よりも
オン抵抗が小さく測定される。そして、温度上昇に対す
るオン抵抗の変動（減少）はダイオードの構造，電力消
費量などにより各々のダイオード固有の過渡状態があ
り、時間と共に変化する。そして、時間軸を拡大して考
えると通電直後では自己発熱量が僅かであり温度上昇は
ほとんど発生していないため、電流―電圧特性の変化が
測定限界以下である時間が存在することとなり、この特
性変化が測定限界以下となる時間が各々のダイオード固
有の熱応答時定数である。 According to the present invention, when a constant DC bias current flows from the constant current source 1 to the diode D1, the operating point of the diode D1 is determined, and the temperature of the diode D1 is kept constant. Here, when an AC current having a known amplitude is superimposed on the diode D1 from the AC current source 3 via the capacitor C1, an AC potential difference corresponding to the AC current is generated at both ends of the diode D1. Therefore, if the frequency of the AC current source is set sufficiently large with respect to the thermal response time constant of the diode D1, the decrease in the on-resistance due to the temperature rise of the diode D1 becomes negligible, and the on-resistance of the diode D1 at a predetermined operating point becomes , Can be accurately obtained from the amplitude of the AC current and the amplitude of the AC potential difference between both ends of the diode D1 measured by the AC potential difference measuring device 2. above
The thermal response time constant of the diode will be described. Semiconductor
When power is supplied to the electrode, power is consumed at the joints, etc.
A large amount of current flows due to temperature rise due to self-heating,
The current for the same voltage with the current-voltage characteristic shown in FIG.
In the direction in which the voltage increases, that is, the direction in which the voltage decreases.
Therefore, the slope of the current and voltage is
Larger than usual, that is, more than normal
The on-resistance is measured small. And respond to the temperature rise
Fluctuation (decrease) in the on-resistance depends on the diode structure and power consumption.
Each diode has its own transient state due to cost and other factors.
Change over time. Then, consider expanding the time axis.
The self-heating is small immediately after the power is turned on,
Since there is almost no change, the change in current-voltage characteristics
There is a time that is below the measurement limit.
The time at which the change in performance falls below the measurement limit is
It is a significant thermal response time constant.
【０００７】[0007]
【実施例】次に、本発明の実施例について図面を用いて
説明する。図１は本発明の請求項１の実施例を示す回路
図である。図２は図１に示す回路の動作を説明する波形
図である。図１において、一定の直流のバイアス電流Ｉ
10を供給する定電流源１はダイオードＤ１のアノード
に、ダイオードＤ１のカソードは基準電位に、交流電位
差測定装置２はダイオードＤ１に並列に、交流電流源３
は第一コンデンサーＣ１を介してダイオードＤ１に並列
に接続されている。Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a circuit diagram showing a first embodiment of the present invention. FIG. 2 is a waveform chart for explaining the operation of the circuit shown in FIG. In FIG. 1, a constant DC bias current I
The constant current source 1 for supplying 10 is connected to the anode of the diode D1, the cathode of the diode D1 is connected to the reference potential, the AC potential difference measuring device 2 is connected in parallel with the diode D1,
Is connected in parallel with the diode D1 via the first capacitor C1.
【０００８】次に、上記実施例の動作を図２（ａ），
（ｂ）の波形図を用いて説明する。図１において、ダイ
オードＤ１に定電流源１から一定の直流のバイアス電流
Ｉ 10が流れている定常状態で、交流電流源３から図２
（ａ）に示す周波数をｆ10とし予め設定された振幅ΔＩ
10を持った正弦波形の交流電流が第一コンデンサーＣ１
を介してダイオードＤ１に流れると、ダイオードＤ１の
両端の電位差は、交流電位差測定装置２によって、図２
（ｂ）で示す、振幅ΔＶ10を持った正弦波形の電位差と
して測定される。従ってこの場合のダイオードＤ１のオ
ン抵抗ＲONは、次式 ＲON＝ΔＶ10／ΔＩ10 により正確に求められる。Next, the operation of the above embodiment will be described with reference to FIG.
This will be described with reference to the waveform diagram of FIG. In FIG. 1, the die
Constant D bias current from constant current source 1 to diode D1
I TenIn the steady state where the air flows, FIG.
The frequency shown in FIG.TenAnd a preset amplitude ΔI
TenAC current with a sine waveform with the first capacitor C1
Flows through the diode D1 through the
The potential difference between both ends is measured by an AC potential difference measuring device 2 as shown in FIG.
Amplitude ΔV shown in (b)TenAnd the potential difference of a sinusoidal waveform with
Measured. Therefore, in this case, the diode D1 is turned off.
Resistance RONIs given by the following equation RON= ΔVTen/ ΔITen Is more accurately determined.
【０００９】この場合、定常状態として定電流源１から
一定の直流のバイアス電流Ｉ１０がダイオードＤ１に流
れている為、ダイオードＤ１の動作点が定められ、また
ダイオードＤ１の温度は一定に保たれている。従って交
流の周波数ｆ１０をダイオードＤ１の熱応答時定数に対
して十分大きく設定すれば、ダイオードＤ１の温度上昇
によるオン抵抗の減少は無視できるものとなり、所定の
動作点において正確なダイオードＤ１のオン抵抗測定が
可能となる。即ち、交流電流源３の１／２周期の時間
（電流の最小値から最大値まで変化する時間）の幅がダ
イオードＤ１の熱応答時定数よりも大きい場合は、図８
に示したようなダイオードＤ１の電流―電圧特性が電圧
が低くなる方向に平行移動してしまい、オン抵抗が正常
時よりも小さく測定されてしまうが、交流電流源３の１
／２周期の時間の幅をダイオードＤ１の熱応答時定数に
対して十分短く設定すれば、ダイオードＤ１の温度が上
昇する前に交流電流は立ち下がるので、ダイオードは熱
応答（温度上昇）することはない。従って、ダイオード
Ｄ１の電流−電圧特性が電圧が低くなる方向に平行移動
することはなく、ダイオードＤ１のオン抵抗の減少も無
視することができ、正確なオン抵抗の測定が可能とな
る。 [0009] In this case, since the bias current I 10 of the constant DC from the constant current source 1 as steady state is flowing through the diode D1, the operating point of the diode D1 is defined, and the temperature of the diode D1 is kept constant ing. Therefore, if sufficiently large set the frequency f 10 of the AC relative thermal response time constant of the diode D1, a decrease in on-resistance due to temperature rise of the diode D1 becomes negligible, on the exact diodes D1 at a predetermined operating point Resistance measurement becomes possible. That is, the time of a half cycle of the AC current source 3
(The time required for the current to change from the minimum value to the maximum value)
If the thermal response time constant is larger than that of the ion D1, FIG.
The current-voltage characteristic of the diode D1 as shown in FIG.
Parallel movement in the direction where
Although it is measured smaller than the time, one of the AC current sources 3
/ 2 period time width as the thermal response time constant of diode D1
If it is set short enough, the temperature of diode D1 will rise.
Since the AC current falls before rising, the diode heats up.
There is no response (temperature rise). Therefore, the diode
The current-voltage characteristic of D1 moves parallel to the direction in which the voltage decreases.
And no decrease in the on-resistance of the diode D1.
And on-resistance can be measured accurately.
You.
【００１０】図３は本発明の他の実施例を示す回路図で
ある。図４は図２に示す回路の動作を説明する波形図で
ある。図３において、既知のバイアス電流Ｉ20とパルス
状の微少変動電流ΔＩ20とが重畳された変動電流Ｉ20＋
ΔＩ20を供給する電流源４はダイオードＤ１のアノード
に、ダイオードＤ１のカソードは基準電位に、第一電位
差測定装置５は第一コンデンサーＣ１を介してダイオー
ドＤ１に並列に接続されている。FIG. 3 is a circuit diagram showing another embodiment of the present invention. FIG. 4 is a waveform chart for explaining the operation of the circuit shown in FIG. In FIG. 3, a fluctuation current I20 + in which a known bias current I20 and a pulse-like minute fluctuation current ΔI20 are superimposed.
The current source 4 for supplying ΔI20 is connected to the anode of the diode D1, the cathode of the diode D1 is connected to the reference potential, and the first potential difference measuring device 5 is connected in parallel to the diode D1 via the first capacitor C1.
【００１１】次に、上記実施例の動作を図４（ａ），
（ｂ）の波形図を用いて説明する。図３において、ダイ
オードＤ１に電流源４からバイアス電流Ｉ20として例え
ばＩ20＝７．５ｍＡが流れている状態で、図４（ａ）に
示すパルス状の微少変動電流ΔＩ20として例えばΔＩ20
＝０．１ｍＡが重畳された変動電流Ｉ20＋ΔＩ20がダイ
オードＤ１に入力すると、この０．１ｍＡの変動により
ダイオードＤ１の両端の電位差は微少変動する。Next, the operation of the above embodiment will be described with reference to FIG.
This will be described with reference to the waveform diagram of FIG. 3, in a state in which is from the current source 4 to the diode D1 to the bias current I 20 example I 20 = 7.5 mA is flowing, pulsating minute change current [Delta] I 20 and to for example [Delta] I 20 shown in FIGS. 4 (a)
When the fluctuation current I 20 + ΔI 20 superimposed with = 0.1 mA is input to the diode D1, the fluctuation of 0.1 mA causes the potential difference between both ends of the diode D1 to slightly fluctuate.
【００１２】このバイアス電流Ｉ20によるダイオードＤ
１での電圧降下分を含んだ電位差の絶対値は８００ｍＶ
程度であって、もしこの電位差を第一電位差測定装置５
として例えば１２ｂｉｔのデジタルオシロスコープで測
定すると、８００ｍＶを１／４０９６に分解することと
なり、分解能は０．２ｍＶ程度の広いレンジとなってし
まうが、本実施例ではダイオードＤ１のアノードと第一
電位差測定装置５の間に第一コンデンサーＣ１があるの
で、この第一コンデンサＣ１で直流成分（バイアス電流
Ｉ20に対応する）をカットして変動電流Ｉ20＋ΔＩ20が
入力されたことによって生じる電位差の微少変動分のみ
を高分解能で測定することとなり、それは、図４（ｂ）
に示す振幅ΔＶ20を持ったパルス状の電位差として正確
に測定される。従ってこの場合のダイオードＤ１のオン
抵抗ＲONは、次式 ＲON＝ΔＶ20／ΔＩ20 により正確に求められる。The diode D caused by the bias current I 20
The absolute value of the potential difference including the voltage drop at 1 is 800 mV
If this potential difference is measured by the first potential difference measuring device 5
For example, when measured with a 12-bit digital oscilloscope, 800 mV is decomposed into 1/4096, and the resolution becomes a wide range of about 0.2 mV. In this embodiment, the anode of the diode D1 and the first potential difference measuring device since during the 5 there is a first capacitor C1, slight variations in the potential difference caused by the DC component in the first capacitor C1 (the bias current corresponding to I 20) varying current I 20 + ΔI 20 by cutting is input Only the minute is measured with high resolution, which is shown in FIG.
Is accurately measured as a pulse-like potential difference having an amplitude ΔV 20 shown in FIG. Therefore, the ON resistance R ON of the diode D1 in this case can be accurately obtained by the following equation: R ON = ΔV 20 / ΔI 20
【００１３】この場合も、電流源４からパルス状の微少
変動電流ΔＩ20が立ち上がるまでは定常的にバイアス電
流Ｉ20がダイオードＤ１に流れている為、ダイオードＤ
１の動作点が定められ、またダイオードＤ１の温度は一
定に保たれている。また微少変動電流ΔＩ20はパルス状
にきわめて短い時間に与えられるので、ダイオードＤ１
の温度上昇によるオン抵抗の減少は無視できるものとな
り、正確なダイオードＤ１のオン抵抗測定が可能とな
る。また、図３において、ダイオードＤ１の両端の電位
差を安定させる為に第一電位差測定装置５に並列に抵抗
を接続しても良い。[0013] For this case also, the constant bias current I 20 until the pulsating minute change current [Delta] I 20 from current source 4 rises is flowing through the diode D1, the diode D
1 and the temperature of the diode D1 is kept constant. Since the minute fluctuation current ΔI 20 is given in a very short time in a pulse form, the diode D1
The decrease in the on-resistance due to the rise in temperature becomes negligible, and the on-resistance of the diode D1 can be accurately measured. In FIG. 3, a resistor may be connected in parallel to the first potential difference measuring device 5 in order to stabilize the potential difference between both ends of the diode D1.
【００１４】図５は本発明の他の実施例を示す回路図で
ある。図６は図５に示す回路の動作を説明する波形図で
ある。図５は、図３に示す回路に図４におけるΔＩ20を
測定する回路を加えた場合の回路図であり、抵抗値が正
確に分かっている抵抗Ｒ１は電流源４とダイオードＤ１
との間に、第二電位差測定装置５０は第二コンデンサＣ
２を介して抵抗Ｒ１に並列に接続されている。FIG. 5 is a circuit diagram showing another embodiment of the present invention. FIG. 6 is a waveform chart for explaining the operation of the circuit shown in FIG. FIG. 5 is a circuit diagram in a case where a circuit for measuring ΔI20 in FIG. 4 is added to the circuit shown in FIG. 3. The resistor R1 whose resistance value is accurately known is a current source 4 and a diode D1.
Between the second capacitor C and the second capacitor C
2 is connected in parallel to the resistor R1.
【００１５】次に、上記実施例の動作を図６（ａ），
（ｂ），（ｃ）の波形図を用いて説明する。図５におい
て、抵抗Ｒ１に電流源４からバイアス電流Ｉ20が流れて
いる状態で、図６（ａ）に示すパルス状の微少変動電流
ΔＩ20が重畳された変動電流Ｉ20＋ΔＩ20が抵抗Ｒ１に
入力すると、この電流の微少変動により抵抗Ｒ１の両端
の電位差は微少変動する。Next, the operation of the above embodiment will be described with reference to FIGS.
This will be described with reference to the waveform diagrams of (b) and (c). 5, resistor R1 from the current source 4 in a state in which the bias current I 20 flows in, FIG varying current pulsating minute change current [Delta] I 20 shown in (a) is superimposed I 20 + [Delta] I 20 is the resistor R1 , The potential difference between both ends of the resistor R1 slightly fluctuates due to the minute fluctuation of the current.
【００１６】本実施例では第二電位差測定装置５０（例
えば１２ｂｉｔのデジタルオシロスコープ）は、第二コ
ンデンサーＣ２を介して抵抗Ｒ１に並列に接続されてい
るので、第二コンデンサＣ２で変動電流Ｉ20＋ΔＩ20の
直流成分（バイアス電流Ｉ20に対応する）をカットし、
変動電流Ｉ20＋ΔＩ20が入力されたことによって生じる
抵抗Ｒ１の両端の電位差の微少変動分のみを高分解能で
測定することとなり、それは、図６（ｂ）に示す振幅Δ
Ｖ30を持ったパルス状の電位差として正確に測定され
る。従ってこの場合のパルス状の微少変動電流ΔＩ
20は、次式、 ΔＩ20＝ΔＶ30／Ｒ１ により正確に求められる。In this embodiment, since the second potential difference measuring device 50 (for example, a 12-bit digital oscilloscope) is connected in parallel to the resistor R1 via the second capacitor C2, the second capacitor C2 causes the fluctuating current I 20 + ΔI Cut the DC component of 20 (corresponding to the bias current I 20 )
Only the minute fluctuation of the potential difference between both ends of the resistor R1 caused by the input of the fluctuation current I 20 + ΔI 20 is measured with high resolution, which is represented by the amplitude Δ shown in FIG.
It is accurately measured as a pulsed potential difference with V 30. Therefore, in this case, the pulse-shaped minute fluctuation current ΔI
20 can be accurately obtained by the following equation: ΔI 20 = ΔV 30 / R1.
【００１７】同時に、ダイオードＤ１の両端の電位差の
微少変動分も、請求項２の実施例の説明と同様に図６
（ｃ）においてパルス波形の電位差の振幅ΔＶ20として
正確に測定される。従ってこの場合のダイオードＤ１の
オン抵抗ＲONは、先に求めたΔＩ20を用いて、次式 ＲON＝ΔＶ20／ΔＩ20 により正確に求められる。At the same time, the minute variation of the potential difference between the two ends of the diode D1 is also determined in the same manner as in the second embodiment.
In (c), it is accurately measured as the amplitude ΔV 20 of the potential difference of the pulse waveform. Accordingly, the ON resistance R ON of the diode D1 in this case can be accurately obtained by using the previously obtained ΔI 20 according to the following equation: R ON = ΔV 20 / ΔI 20
【００１８】[0018]
【発明の効果】本発明は、以上説明したように、定電流
源から供給される一定電流がバイアス電流として順方向
に流されるダイオードと、前記ダイオードに並列に接続
され、前記ダイオードの熱応答時定数よりも大きい周波
数の既知の微少変動電流を前記ダイオードに供給する交
流電流源と、前記ダイオードの陽極と前記交流電流源の
間に接続される第一コンデンサと、前記ダイオードに並
列に接続され前記ダイオードの両端の交流電位差を測定
する交流電位差測定装置とからなり、前記微小変動電流
の値と前記交流電位差測定装置の指示とから前記ダイオ
ードのオン抵抗を測定することを特徴とするように構成
されているので、所定の動作点においてダイオードの自
己発熱の影響を受けず正確にダイオードのオン抵抗を測
定できるダイオードのオン抵抗測定回路を提供すること
ができる。As described above, according to the present invention, a diode in which a constant current supplied from a constant current source flows in a forward direction as a bias current, and a diode connected in parallel with the diode and having a thermal response when the diode responds thermally. An alternating current source that supplies a known small fluctuating current having a frequency greater than a constant to the diode, a first capacitor connected between the anode of the diode and the alternating current source, and the first capacitor connected in parallel with the diode; An AC potential difference measuring device for measuring an AC potential difference between both ends of the diode, wherein the on-resistance of the diode is measured from the value of the minute fluctuation current and an instruction from the AC potential difference measuring device. The diode can accurately measure the on-resistance of the diode without being affected by the self-heating of the diode at the specified operating point. It is possible to provide the on-resistance measuring circuit.
【図面の簡単な説明】[Brief description of the drawings]
【図１】本発明の請求項１の実施例を示す回路図であ
る。FIG. 1 is a circuit diagram showing a first embodiment of the present invention.
【図２】図１に示す回路の動作を説明する波形図であ
る。FIG. 2 is a waveform chart illustrating the operation of the circuit shown in FIG.
【図３】本発明の他の実施例を示す回路図である。FIG. 3 is a circuit diagram showing another embodiment of the present invention.
【図４】図２に示す回路の動作を説明する波形図であ
る。FIG. 4 is a waveform chart for explaining the operation of the circuit shown in FIG. 2;
【図５】本発明の他の実施例を示す回路図である。FIG. 5 is a circuit diagram showing another embodiment of the present invention.
【図６】図３に示す回路の動作を説明する波形図であ
る。FIG. 6 is a waveform chart for explaining the operation of the circuit shown in FIG. 3;
【図７】従来のダイオードのオン抵抗測定回路図であ
る。FIG. 7 is a circuit diagram of a conventional diode for measuring the on-resistance.
【図８】従来のダイオードのオン抵抗測定を説明する為
のダイオード特性図である。FIG. 8 is a diode characteristic diagram for explaining a conventional on-resistance measurement of a diode.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 鎌田 浩実 東京都武蔵野市中町２丁目９番32号 横 河電機株式会社内 (72)発明者 小林 信治 東京都武蔵野市中町２丁目９番32号 横 河電機株式会社内 (72)発明者 八木原 剛 東京都武蔵野市中町２丁目９番32号 横 河電機株式会社内 (72)発明者 野々山 淳 東京都武蔵野市中町２丁目９番32号 横 河電機株式会社内 審査官 下中 義之 (56)参考文献 特開 昭50−128978（ＪＰ，Ａ) 特開 昭61−110064（ＪＰ，Ａ) 実開 平１−135375（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) G01R 27/02 G01R 31/26 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hiromi Kamada 2-9-132 Nakamachi, Musashino-shi, Tokyo Inside Yokogawa Electric Corporation (72) Inventor Shinji Kobayashi 2-9-132 Nakamachi, Musashino-shi, Tokyo Next to (72) Inventor Tsuyoshi Yagihara 2-9-1, Nakamachi, Musashino-shi, Tokyo Yokogawa Electric Co., Ltd. (72) Atsushi Nonoyama 2-9-1, Nakamachi, Musashino-shi, Tokyo Yokogawa Electric Examiner in a corporation Yoshiyuki Shimonaka (56) References JP-A-50-128978 (JP, A) JP-A-61-110064 (JP, A) JP-A-1-135375 (JP, U) (58) Survey Field (Int.Cl. 7 , DB name) G01R 27/02 G01R 31/26
Claims (1)
ス電流として順方向に流されるダイオードと、前記ダイ
オードに並列に接続され、前記ダイオードの熱応答時定
数よりも大きい周波数の既知の微少変動電流を前記ダイ
オードに供給する交流電流源と、前記ダイオードの陽極
と前記交流電流源の間に接続される第一コンデンサと、
前記ダイオードに並列に接続され前記ダイオードの両端
の交流電位差を測定する交流電位差測定装置とからな
り、前記微小変動電流の値と前記交流電位差測定装置の
指示とから前記ダイオードのオン抵抗を測定することを
特徴とするダイオードのオン抵抗測定回路。1. A diode in which a constant current supplied from a constant current source flows in a forward direction as a bias current, and a known minute fluctuation of a frequency connected in parallel with the diode and having a frequency larger than a thermal response time constant of the diode. An alternating current source that supplies current to the diode, a first capacitor connected between the anode of the diode and the alternating current source,
An AC potential difference measuring device connected in parallel to the diode and measuring an AC potential difference between both ends of the diode; and measuring the on-resistance of the diode from the value of the minute fluctuation current and an instruction from the AC potential difference measuring device. A circuit for measuring the on-resistance of a diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22422492A JP3196859B2 (en) | 1992-08-24 | 1992-08-24 | Diode on-resistance measurement circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22422492A JP3196859B2 (en) | 1992-08-24 | 1992-08-24 | Diode on-resistance measurement circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0666857A JPH0666857A (en) | 1994-03-11 |
| JP3196859B2 true JP3196859B2 (en) | 2001-08-06 |
Family
ID=16810456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22422492A Expired - Fee Related JP3196859B2 (en) | 1992-08-24 | 1992-08-24 | Diode on-resistance measurement circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3196859B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2015086A1 (en) * | 2007-07-13 | 2009-01-14 | Infineon Technologies Austria AG | Method for measuring an on-resistance of a load-path of a transistor |
| JP5640336B2 (en) * | 2009-07-02 | 2014-12-17 | 日産自動車株式会社 | Electric motor control system |
-
1992
- 1992-08-24 JP JP22422492A patent/JP3196859B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0666857A (en) | 1994-03-11 |
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