JP3193181B2 - High heat resistant seal member - Google Patents

High heat resistant seal member

Info

Publication number
JP3193181B2
JP3193181B2 JP06300893A JP6300893A JP3193181B2 JP 3193181 B2 JP3193181 B2 JP 3193181B2 JP 06300893 A JP06300893 A JP 06300893A JP 6300893 A JP6300893 A JP 6300893A JP 3193181 B2 JP3193181 B2 JP 3193181B2
Authority
JP
Japan
Prior art keywords
quartz glass
heat
seal member
sealing
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP06300893A
Other languages
Japanese (ja)
Other versions
JPH06256028A (en
Inventor
博至 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Quartz Products Co Ltd
Original Assignee
Shin Etsu Quartz Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Quartz Products Co Ltd filed Critical Shin Etsu Quartz Products Co Ltd
Priority to JP06300893A priority Critical patent/JP3193181B2/en
Publication of JPH06256028A publication Critical patent/JPH06256028A/en
Application granted granted Critical
Publication of JP3193181B2 publication Critical patent/JP3193181B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Glass Melting And Manufacturing (AREA)
  • Surface Treatment Of Glass (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、半導体ウエハの熱処理
装置や高温流体が通過するフランジ部、その他の高温受
熱部を面接触にてシールを行う高耐熱性シール部材に関
する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus for a semiconductor wafer, a high heat-resistant sealing member for sealing a flange portion through which a high-temperature fluid passes, and other high-temperature heat receiving portions by surface contact.

【0002】[0002]

【従来の技術】従来より、高温用シール部材としては、
弗素樹脂やシリコンゴム等の耐熱樹脂によるOリングが
使用されてきた。これらの耐熱度は200〜300℃程
度である。又近年メチレン鎖を持つベンゼン環が縮合多
環芳香族化合物の間を架橋して形成されるCOPNA樹
脂(日本国特許公開公報62−521、522)を用い
てシール部材を構成しようとする動きもあるが、かかる
シール部材においてもその耐熱性は350℃前後であ
り、又COPNA樹脂は弗素樹脂やシリコンゴム等に比
較して弾性力が大幅に落ちるために、高度な気密封止が
期待できない。
2. Description of the Related Art Conventionally, as a high-temperature sealing member,
O-rings made of a heat-resistant resin such as a fluorine resin or silicone rubber have been used. Their heat resistance is about 200 to 300 ° C. In recent years, there has been a movement to form a seal member using a COPNA resin (Japanese Patent Publication No. 62-521, 522) in which a benzene ring having a methylene chain is crosslinked between condensed polycyclic aromatic compounds. However, such a sealing member also has a heat resistance of about 350 ° C., and a high degree of hermetic sealing cannot be expected because the COPNA resin has a significantly reduced elastic force as compared with a fluorine resin or a silicone rubber.

【0003】この為300〜400℃以上の高温に曝さ
れるシール部は一般にフランジ等の背面側より水冷等を
施すことによりによりシール部材を熱保護する方法など
が考えられたが、高温側のフランジが石英ガラス等の輻
射熱透過性材料の場合は水冷しても前記耐熱性樹脂から
なるOリングに熱がかかり、また、炭化珪素等の高熱伝
導材の場合は炭化珪素側のフランジの水冷はヒートショ
ックの関係から不可能のため、この場合もOリングへの
高熱を防ぐことが出来なく、Oリングに受熱されるOリ
ングの熱劣化は実質上避け得ない状況にあった。
For this reason, a method of protecting the seal member by subjecting the seal portion exposed to a high temperature of 300 to 400 ° C. or more to water cooling or the like from the back side of a flange or the like has been generally considered. When the flange is made of a radiant heat permeable material such as quartz glass, heat is applied to the O-ring made of the heat-resistant resin even with water cooling, and in the case of a high heat conductive material such as silicon carbide, water cooling of the flange on the silicon carbide side is performed. Since it is impossible due to heat shock, high heat to the O-ring cannot be prevented in this case as well, and thermal deterioration of the O-ring received by the O-ring has been substantially unavoidable.

【0004】また、例えば、半導体ウエハの熱処理装置
においては、図5に示すように、下端側が開口された円
筒ドーム状の炉心管20においては下端開口に設けたフ
ランジ21とベース30上に載設された石英キャップ2
3間にOリング24を介して気密閉塞させると共に、該
フランジ21直上に設けた処理ガス導入口22にも前記
Oリング24に相当する部材を介してガス導入管25に
接続する構成が使用されているが、かかる装置の場合、
ヒータ26が囲繞される加熱部位より前記シール部を熱
的に遠ざけるために、前記石英キャップ23上に保温筒
27を載設し、該保温筒27上面に、半導体ウエハ28
を列設配置したウエハボート29を載置させるととも
に、該ウエハボート29が位置する炉心管20周囲にヒ
ータ26を囲繞させ、公知の手段で前記半導体ウエハ2
8を加熱処理可能に構成してある。
For example, in a semiconductor wafer heat treatment apparatus, as shown in FIG. 5, a cylindrical dome-shaped core tube 20 having an open lower end is mounted on a flange 21 provided at the lower end and a base 30. Quartz cap 2
A configuration is used in which an O-ring 24 is airtightly closed between the three, and a processing gas introduction port 22 provided immediately above the flange 21 is also connected to a gas introduction pipe 25 via a member corresponding to the O-ring 24. However, in the case of such a device,
In order to thermally keep the seal portion away from the heating portion where the heater 26 is surrounded, a heat insulating cylinder 27 is mounted on the quartz cap 23, and a semiconductor wafer 28 is placed on the upper surface of the heat insulating cylinder 27.
Are placed in a row, and a heater 26 is surrounded around a furnace tube 20 where the wafer boat 29 is located.
8 is configured to be heat-treatable.

【0005】[0005]

【発明が解決しようとする課題】かかる熱処理装置にお
いては、前記保温筒27を介してウエハ熱処理用空間
(例えば1100〜1250℃の温度を有する)から遮
熱させ、炉心管20開口端のフランジ21に設けた前記
Oリング24その他のシール部分に高温が伝播するのを
防いでいるが、該フランジ21部等を弗素樹脂やシリコ
ンゴム等の耐熱温度域まで下げさせるには保温筒27の
背高を相当程度高くせねばならず、結果として炉心管2
0内の有効加熱処理領域が低下する。又前記の構成を取
っても、高温処理ガスの一部が前記シール部に熱伝播し
てOリング24の劣化を引起こしやすく、この為半導体
熱処理用の有毒な処理ガスがOリング24の劣化により
外部に漏洩する恐れがあり、装置の腐触や作業者への悪
影響が問題となりやすい。又、前記Oリング24をフッ
素樹脂やシリコンゴムで形成した場合Oリング24の劣
化によりこれらの樹脂等より生成されるガスにより半導
体ウエーハ等に悪影響を及ぼしやすい。
In such a heat treatment apparatus, heat is shielded from the space for wafer heat treatment (for example, having a temperature of 1100 to 1250 ° C.) through the heat retaining cylinder 27, and the flange 21 at the opening end of the furnace tube 20. Although the high temperature is prevented from propagating to the O-ring 24 and other sealing parts provided in the above, the height of the heat retaining cylinder 27 is required to lower the flange 21 and the like to the heat-resistant temperature range of fluorine resin or silicon rubber. Must be considerably high, and as a result the core tube 2
The effective heat treatment area within 0 is reduced. Even with the above configuration, a part of the high-temperature processing gas propagates heat to the seal portion and easily causes deterioration of the O-ring 24. Therefore, the toxic processing gas for semiconductor heat treatment deteriorates the O-ring 24. Therefore, there is a risk of leakage to the outside, and it is easy to cause a problem that the apparatus is damaged or the operator is adversely affected. Further, when the O-ring 24 is formed of a fluororesin or silicon rubber, the O-ring 24 is liable to be adversely affected by a gas generated from the resin or the like due to deterioration of the O-ring 24.

【0006】本発明は、かかる技術的課題に鑑み、前記
半導体熱処理装置の様な1300℃前後の高温雰囲気に
曝される部位においても充分なるシール性を確保できる
とともに、併せて熱伝導と熱輻射を遮断し得る高熱遮断
性のシール部材を提供する事を目的とするものである。
In view of the above technical problems, the present invention can ensure sufficient sealing performance even in a portion exposed to a high-temperature atmosphere of about 1300 ° C., as in the above-mentioned semiconductor heat treatment apparatus, and also has heat conduction and heat radiation. It is an object of the present invention to provide a seal member having a high heat-shielding property capable of shutting off the heat.

【0007】[0007]

【課題を解決するための手段】本発明はかかる技術的課
題を達成するために、少なくとも一方が高温下に曝され
る部位と面接触にて接触させてシールを行う、例えばフ
ランジ等に介装されるシートパッキンその他のシール部
材において、少なくとも前記高温シール面側に独立気
泡、特に減圧独立気泡からなる非晶質高純度石英ガラス
発泡体層を配設させた事を特徴とする。この場合前記シ
ール部材全体を発泡体層で形成してもよいが、前記発泡
体層の低温側に透明石英ガラス板を熱融着させるか強い
ファイアポリシングにより透明石英ガラス層を形成し、
該石英ガラス板と低温側接触面をOリングを介して面接
触可能に構成してもよい。
According to the present invention, in order to achieve the above technical object, at least one of the parts is brought into surface contact with a part to be exposed to a high temperature to make a seal. In the sheet packing or other sealing member to be formed, an amorphous high-purity quartz glass foam layer composed of closed cells, particularly reduced-pressure closed cells, is disposed at least on the high-temperature sealing surface side. In this case, the entire sealing member may be formed of a foam layer, but a transparent quartz glass plate is formed by heat fusion or strong fire polishing on a low-temperature side of the foam layer,
The quartz glass plate and the low-temperature side contact surface may be configured to be in surface contact via an O-ring.

【0008】[0008]

【作用】かかる技術手段によれば、非晶質の石英ガラス
の発泡体により気泡自体が適度な弾性をもって変形し、
而も前記夫々の気泡は連通気泡ではなく独立気泡である
為に、該シール部材よりガス漏れ等が生じる事なく気密
シールが可能である。即ちより具体的に説明すると、図
1に示すようにシール部材1表面に位置する独立気泡l
aは微小凹凸状(ラピリンス状)に形成され、而も該気
泡la自体が弾性力を有するために、フランジ21によ
り押圧されるとフランジ21のシール面に多少の凹凸が
あってもこれを吸収して精度よく気密シールさせる事が
出来る。この場合前記シール部材1の独立気泡laが余
りに大きい場合には前記フランジ21の押圧によっても
隙間が形成され、又余りに小さくても弾性機能を喪失し
て円滑なシールが困難となり、従って見掛け密度が0.
2〜1.2g/cmで、気泡の80%以上が10〜1
000μm径の独立気泡で形成するのがよい。
According to this technical means, the bubbles themselves are deformed with a suitable elasticity by the amorphous quartz glass foam,
Since each of the bubbles is not a communicating bubble but a closed bubble, an airtight seal can be achieved without gas leakage or the like from the seal member. That is, more specifically, as shown in FIG. 1, a closed cell l located on the surface of the seal member 1
a is formed in the shape of minute irregularities (lapilince shape), and because the bubble la itself has an elastic force, when pressed by the flange 21, even if there is some irregularity in the sealing surface of the flange 21, this is absorbed. It is possible to seal hermetically with high accuracy. In this case, if the closed cell la of the seal member 1 is too large, a gap is formed by the pressing of the flange 21. Even if it is too small, the elastic function is lost and smooth sealing becomes difficult, so that the apparent density is reduced. 0.
2 to 1.2 g / cm 3 , 80% or more of air bubbles are 10 to 1
It is preferable to form it with closed cells having a diameter of 000 μm.

【0009】特に密度と気泡径を適当に設定したため、
気泡の変形による適度な弾性(例えばヤング率が石英ガ
ラスのヤング率7.39×10Kg/mmの1/1
0〜1/4)を持つことが出来、シール面への密着が高
温時にもその弾性が維持され、且つそれ自体が気体を通
さない独立気泡1aであるので高いシール性を持つ。
又、石英ガラスの場合、軟化点温度が1600℃以上と
高く、この為前記独立気泡1aは1300℃前後でも十
分なる弾性力を維持でき、極めて高い高耐熱性を有す
る。而も石英ガラスは化学的安定性が高く且つ腐食等が
生じる余地もないために、シールすべき部位に制限され
ず、又前記の様に半導体熱処理装置のフランジ21部等
に使用した場合においても、処理空間内に半導体毒とな
るガスが生成される事もない。
In particular, since the density and the bubble diameter are appropriately set,
Moderate elasticity due to the deformation of the bubbles (for example, the Young's modulus is 1/1 of 7.39 × 10 3 Kg / mm 2 of the Young's modulus of quartz glass)
0 to 1/4), the elasticity is maintained even when the sealing surface is in close contact with a high temperature, and it has high sealing properties because it is a closed cell 1a that does not allow gas to pass through.
Further, in the case of quartz glass, the softening point temperature is as high as 1600 ° C. or higher, so that the closed cells 1a can maintain a sufficient elasticity even at around 1300 ° C., and have extremely high heat resistance. However, quartz glass has high chemical stability and has no room for corrosion or the like, so that it is not limited to a portion to be sealed, and even if it is used for the flange 21 of a semiconductor heat treatment apparatus as described above. In addition, no gas serving as a semiconductor poison is generated in the processing space.

【0010】又前記シール部材1として機能する発泡体
が弾性力を維持させるには非晶質である事が前提であ
り、この場合、Na、K、Li、Cu、B、Ca、N
i、Fe、Ceの含有金属不純物量が、それぞれ0.5
ppm以下にする事により長期に亙って1300℃前後
の高温下に曝させた場合でも失透や結晶化が生じる事な
く、長期に亙って弾性力を維持できる。更に前記発泡体
のOH基が100ppm以下で、含有窒素濃度が0.0
1wt%以上に設定する事により耐熱性が一層向上す
る。
It is premised that the foam functioning as the seal member 1 is amorphous in order to maintain the elastic force. In this case, Na, K, Li, Cu, B, Ca, N
The amount of metal impurities contained in i, Fe, and Ce is 0.5
By setting the content to less than ppm, the elastic force can be maintained for a long time without devitrification or crystallization even when exposed to a high temperature of about 1300 ° C. for a long time. Further, when the OH group of the foam is 100 ppm or less and the nitrogen concentration is 0.0
By setting the content to 1% by weight or more, the heat resistance is further improved.

【0011】又前記シール部材1の独立気泡laが減圧
気泡であるために、遮熱性を有し低温側への熱伝播及び
熱輻射を有効に阻止し得るとともに熱衝撃に対する緩和
性が向上する。即ち、シール部材1を薄く作った場合で
も、含有する気泡により、熱衝撃による応力を吸収し
て、高温時の急激な熱応力に出会っても破損するような
ことがなく、いわゆる高スポーリング性を有す。又熱遮
断性を有する事は、低温側の相手面が焼き付き若しくは
固着等が生じる事なく、分解容易性の確保と共に、例え
高温側のシール面に1000℃以上の高温を受熱した場
合においても低温側を300℃以下に抑えるような設計
が容易であり、これにより低温側にOリング24等の使
用が可能となる。 この場合前記シール部材1全体を発
泡体で形成してもよいが、Oリング24を使用するため
に前記発泡体層10の低温側に透明石英ガラス層11を
形成し、該透明石英ガラス層11と低温側接触面をOリ
ング24を介して面接触可館に構成気泡するのがよい。
これにより発泡体層側10で熱伝導、熱輻射は効率よく
遮断できるとともにOリング24との接触は、滑らかな
表面を有する透明石英ガラス層11が行なうために、低
温側のシール性が一層向上する。
Further, since the closed cells la of the sealing member 1 are depressurized cells, they have heat shielding properties, can effectively prevent heat propagation and heat radiation to the low temperature side, and have improved ease of thermal shock. That is, even when the seal member 1 is made thin, the bubbles contained therein absorb the stress caused by the thermal shock, and do not break even when encountering a rapid thermal stress at a high temperature. Has. In addition, having a heat insulation property ensures that the mating surface on the low temperature side does not seize or stick, and that it is easy to disassemble, and that even if a high temperature of 1000 ° C. or more is received on the sealing surface on the high temperature side, it has a low temperature. It is easy to design such that the side is kept at 300 ° C. or lower, so that the O-ring 24 or the like can be used on the low temperature side. In this case, the entire sealing member 1 may be formed of a foam. However, in order to use the O-ring 24, a transparent quartz glass layer 11 is formed on the low temperature side of the foam layer 10, and the transparent quartz glass layer 11 is formed. The low temperature side contact surface may be formed into a surface contact movable via an O-ring 24 to form bubbles.
Thereby, heat conduction and heat radiation can be efficiently cut off on the foam layer side 10 and the transparent quartz glass layer 11 having a smooth surface makes contact with the O-ring 24, so that the sealing performance on the low temperature side is further improved. I do.

【0012】[0012]

【実施例】以下、図面を参照して本発明の好適な実施例
を例示的に詳しく説明する。但しこの実施例に記載され
ている構成部品の寸法、材質、形状、その相対的配置等
は特に特定的な記載がないかぎりは、この発明の範囲を
それに限定する趣旨ではなく、単なる説明例にすぎな
い。シール部材を形成する発泡体は、例えばリング状の
シール部材1を形成する場合において、該シールパッキ
ン外形より若干大きな外径と小さな内径を有する円筒リ
ング状のカーボン製ルツボ内に、あらかじめほとんどの
金属不純物が、0.5ppm以下である熱気相法高純度
合成石英ガラス微粉を800℃のアンモニアガス+窒素
ガス雰囲気内で4時間程度熱処理した石英ガラス微粉を
充填し、減圧雰囲気で1650〜1700℃にて1〜3
時間前後加熱処理し石英ガラス微粉を融着発泡させ、こ
れにより内部に多数の独立気泡を有する石英ガラス発泡
体を得る。次に前記発泡体をシール部材1内外径に合せ
て切削した後、該円筒リング状の発泡体を所定厚みに切
断してシール面として機能する前後両面を研削する。こ
の結果図2(A)に示すシール面表面に微小凹凸状に独
立気泡1aが露出される事になる。尚、前記発泡体の、
重量及びその見かけ体積から見かけ密度を、該見かけ密
度と液体に浸漬した時の重量増から内部の全微小空間に
しめる連通気孔率(体積比)を求め、さらにICP法分
析により各金属不純物の濃度を、FT−IRによる拡散
反射スペクトル法によりOH基含有量を調べた所、該発
泡体の密度は、0.2〜1.2g/cmで、気泡の8
0%以上が10〜1000μm径の独立気泡からなり、
そしてその発泡体中にはNa、K、Li、Cu、B、C
a、Ni、Fe、Ce等の含有金属不純物量が、夫々
0.5ppm以下、OH基が100ppm以下、及び含
有窒素濃度が0.01wt%以上の非晶質体で形成され
ている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be illustratively described in detail below with reference to the drawings. However, the dimensions, materials, shapes, relative arrangements, and the like of the components described in this embodiment are not intended to limit the scope of the present invention unless otherwise specified, and are merely illustrative examples. Only. For example, when the ring-shaped sealing member 1 is formed, most of the metal forming the sealing member is placed in a cylindrical ring-shaped carbon crucible having an outer diameter slightly larger and an inner diameter slightly smaller than the outer shape of the seal packing. A hot-vapor-phase high-purity synthetic quartz glass fine powder having impurities of 0.5 ppm or less is filled with a quartz glass fine powder obtained by heat-treating for about 4 hours in an ammonia gas + nitrogen gas atmosphere at 800 ° C., and the temperature is reduced to 1650 to 1700 ° C. 1-3
Heat treatment is performed for about a few hours to fuse and foam the quartz glass fine powder, thereby obtaining a quartz glass foam having a large number of closed cells inside. Next, after the foam is cut in accordance with the inner and outer diameters of the sealing member 1, the cylindrical ring-shaped foam is cut to a predetermined thickness, and both front and rear surfaces functioning as a sealing surface are ground. As a result, the closed cells 1a are exposed on the surface of the sealing surface shown in FIG. In addition, of the said foam,
The apparent density was determined from the weight and the apparent volume, and the continuous porosity (volume ratio) for all the internal small spaces was determined from the apparent density and the increase in weight when immersed in the liquid, and the concentration of each metal impurity was determined by ICP analysis. When the OH group content was examined by a diffuse reflection spectrum method using FT-IR, the density of the foam was 0.2 to 1.2 g / cm 3 ,
0% or more is composed of closed cells having a diameter of 10 to 1000 μm,
And in the foam, Na, K, Li, Cu, B, C
A, Ni, Fe, Ce and the like are each formed of an amorphous material having a metal impurity content of 0.5 ppm or less, an OH group of 100 ppm or less, and a nitrogen concentration of 0.01 wt% or more.

【0013】図2(B)は、前記リング状シール部材1
が装着された半導体熱処理装置を示し、石英ガラス製炉
心管20の開口端のフランジ21と石英キヤップ23と
の間に介装することにより、例えば保温筒27の背高を
低くして該シール部材1に例え1300℃に近い高温熱
を受熱した場合においても、熱劣化する恐れはなく、こ
れにより炉心管20内の実質的な熱処理有効空間の拡張
を図る事が出来ると共に、前記シール部材1は接触面に
おける剥離性が良く従来のパッキンのように焼き付け等
が生じる事がないために、炉心管20のフランジ21部
を係止部29により係止させた状態でベース30を昇降
させる事により、フランジ21と石英キャップ23間が
容易に離間し、ウエハボート27の交換操作が容易にな
る。
FIG. 2B shows the ring-shaped sealing member 1.
Is mounted between the flange 21 of the open end of the quartz glass furnace tube 20 and the quartz cap 23, for example, to reduce the height of the heat insulating cylinder 27 and to form the sealing member. For example, even in the case of receiving high-temperature heat close to 1300 ° C., there is no risk of thermal deterioration, whereby the effective heat treatment effective space in the furnace tube 20 can be expanded, and the seal member 1 The base 30 is lifted and lowered with the flange 21 of the core tube 20 locked by the locking portion 29 because the peeling property at the contact surface is good and the burning or the like does not occur unlike the conventional packing. The flange 21 and the quartz cap 23 are easily separated from each other, and the replacement operation of the wafer boat 27 is facilitated.

【0014】図3(A)は処理ガス導入口22のフラン
ジ31部の構成を示し、21は炉心管20側に連設され
る処理ガス導入口22の開口端に設けられた石英ガラス
製のフランジ31、32はステンレス製のガス導入管2
5開口端に設けたステンレス製フランジで、両者間に前
記シール部材1を介装させるるとともに、周知のボルト
ナットを用いて固定する。かかる実施例によれば、石英
ガラス製のフランジ31とステンレス製のフランジ32
間に熱遮断性の本実施例にかかるシール部材1が介装さ
れている為に、処理ガス導入口22より伝播される炉心
管20よりの熱が前記シール部材1で遮熱され、ステン
レス製のフランジ32側への伝播を阻止できる。また、
接触面における剥離性も良い為に焼き付け等を防止でき
る。
FIG. 3A shows the structure of the flange 31 of the processing gas inlet 22, and reference numeral 21 denotes a quartz glass made at the open end of the processing gas inlet 22 connected to the furnace tube 20. The flanges 31 and 32 are made of a stainless steel gas introduction pipe 2.
The stainless steel flange provided at the opening end of the opening 5 interposes the sealing member 1 therebetween, and is fixed using a well-known bolt and nut. According to this embodiment, a flange 31 made of quartz glass and a flange 32 made of stainless steel are used.
Since the seal member 1 according to the present embodiment is interposed therebetween, heat from the furnace tube 20 transmitted from the processing gas introduction port 22 is blocked by the seal member 1 and is made of stainless steel. To the flange 32 side. Also,
Since the releasability at the contact surface is good, it is possible to prevent burning and the like.

【0015】図3(B)、(C)には、前記処理ガス導
入フランジ31の接合部の変形例を示し、(B)はフラ
ンジ31、32内周側に位置する筒部を夫々突設させ、
シール部材1Aもこれに合せて内周側に段付き溝を設け
ている。(B)はフランジ31、32を夫々凸状若しく
は凹状に傾斜平行接触面を持って形成され、一方シール
部材1Bはこれに合せて矢羽断面形状に構成されてい
る。かかる実施例によれば、図3(A)の場合に比較し
て接触面積が大きくシール性が大になるとともに、接合
時のフランジ31、32の芯出し作業が簡単になる。
FIGS. 3 (B) and 3 (C) show modified examples of the joint portion of the processing gas introduction flange 31. FIG. 3 (B) shows the cylindrical portions located on the inner peripheral side of the flanges 31 and 32, respectively. Let
The sealing member 1A also has a stepped groove on the inner peripheral side in accordance with this. 4B, the flanges 31 and 32 are formed to have convex or concave inclined parallel contact surfaces, respectively, while the seal member 1B is configured to have an arrow blade cross-sectional shape. According to this embodiment, as compared with the case of FIG. 3 (A), the contact area is large, the sealing performance is large, and the centering work of the flanges 31, 32 at the time of joining is simplified.

【0016】図4(A)、(B)には、本発明の他の実
施例を示すシール部材とその取り付け状況を示す図であ
る。該シール部材50は、前記リング状に形成した前記
高純度石英ガラス発泡体層50Aの一面側に石英ガラス
板50Bを熱融着させて構成している。なお、前記石英
ガラス板50Bを熱融着させる代わりに、発泡体層50
Aの一面側を強くファイアポリシーをして、透明フラッ
トな透明石英ガラス層を形成しても良い。かかるシール
部材は、(B)に示すように石英ガラス製炉心管20の
開口端のフランジ21に発泡体層50Aが、又石英キャ
ップ23側に透明石英ガラス層50Bが位置するように
介装させると共に、石英キャップ23と透明石英ガラス
板50B間にOリング24を配置する。かかる実施例に
よれば前記シール部材の石英ガラス板50B側のフラッ
ト面にOリング24を併用することにより、前記発泡体
層50Aによる高い熱遮断特性によりOリング24の使
用特性に適合する適温に下降させ、該Oリング24によ
る完全なシール性の確保が出来る。従って前記図2の場
合に比較して一ヶ所はシール性の良いOリング24の使
用ができるようにしたため、Oリング24の耐久性を維
持しつつ高いシール性を確保できる。
FIGS. 4A and 4B are views showing a seal member according to another embodiment of the present invention and the state of attachment thereof. The sealing member 50 is formed by thermally fusing a quartz glass plate 50B to one surface of the ring-shaped high-purity quartz glass foam layer 50A. Note that, instead of thermally fusing the quartz glass plate 50B, a foam layer 50 is used.
A fire policy may be strongly applied to one side of A to form a transparent flat transparent quartz glass layer. Such a seal member is interposed so that the foam layer 50A is located on the flange 21 at the open end of the quartz glass furnace core tube 20 and the transparent quartz glass layer 50B is located on the quartz cap 23 side, as shown in FIG. At the same time, an O-ring 24 is arranged between the quartz cap 23 and the transparent quartz glass plate 50B. According to this embodiment, by using the O-ring 24 in combination with the flat surface of the sealing member on the side of the quartz glass plate 50B, the foam layer 50A has a high thermal insulation property so that the O-ring 24 can be adjusted to an appropriate temperature suitable for the usage characteristics. By lowering, the O-ring 24 can completely secure the sealing performance. Therefore, since the O-ring 24 having good sealing performance can be used at one place as compared with the case of FIG. 2, high sealing performance can be secured while maintaining the durability of the O-ring 24.

【0017】[0017]

【発明の効果】以上記載した如く本発明によれば、半導
体熱処理装置の様な1300℃前後の高温雰囲気に曝さ
れる部位においても充分なるシール性を確保できるとと
もに、併せて熱伝導と熱輻射を遮断し得る高熱遮断性の
シール部材を得る事が出来る。等の種々の著効を有す。
As described above, according to the present invention, sufficient sealing performance can be ensured even in a portion exposed to a high-temperature atmosphere of about 1300 ° C., such as a semiconductor heat treatment apparatus, and heat conduction and heat radiation are also achieved. A high heat-blocking sealing member capable of blocking the heat can be obtained. And so on.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明のシール部材のシール構造を示す要部拡
大図である。
FIG. 1 is an enlarged view of a main part showing a seal structure of a seal member of the present invention.

【図2】(A)は本発明の第1実施例にかかる高耐熱性
シール部材を示す斜視図である。(B)は(A)に示す
シール部材を半導体熱処理装置に組込んだ要部縦断面図
である。
FIG. 2A is a perspective view showing a high heat-resistant sealing member according to a first embodiment of the present invention. (B) is a vertical sectional view of a main part in which the seal member shown in (A) is incorporated in a semiconductor heat treatment apparatus.

【図3】(A)(B)(C)は夫々フランジの接合部に
使用するリング状シール部材のいくつかの変形例を示す
分解斜視図である。
FIGS. 3A, 3B, and 3C are exploded perspective views showing several modified examples of a ring-shaped seal member used for a joint portion of a flange.

【図4】(A)は本発明の第2実施例にかかる高耐熱性
シール部材を示す斜視図である。(B)は(A)に示す
シール部材を半導体熱処理装置に組込んだ要部縦断面図
である。
FIG. 4A is a perspective view showing a high heat resistant seal member according to a second embodiment of the present invention. (B) is a vertical sectional view of a main part in which the seal member shown in (A) is incorporated in a semiconductor heat treatment apparatus.

【図5】従来の縦型熱処理炉のフランジ接合部における
シール部材の使用状況を示す縦断面図である。
FIG. 5 is a longitudinal sectional view showing a usage state of a seal member at a flange joint of a conventional vertical heat treatment furnace.

【符号の説明】[Explanation of symbols]

1 シール部材 1A シール部材 1B シール部材 1C シール部材 50 シール部材 21 フランジ 31 フランジ 32 フランジ 23 石英キャップ 50A 発泡体層 50B 透明石英ガラス板 DESCRIPTION OF SYMBOLS 1 Seal member 1A Seal member 1B Seal member 1C Seal member 50 Seal member 21 Flange 31 Flange 32 Flange 23 Quartz cap 50A Foam layer 50B Transparent quartz glass plate

Claims (7)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 少なくとも一方が高温下に曝される部位
に面接触させてシールを行うシール部材において、 少なくとも前記高温シール面側に弾性を持った独立気泡
からなる非晶質高純度石英ガラス発泡体層を配設させた
事を特徴とする高耐熱性シール部材。
1. A sealing member for sealing by bringing at least one of them into surface contact with a portion exposed to high temperature, wherein amorphous high-purity quartz glass foam comprising elastic closed cells at least on the high-temperature sealing surface side. A highly heat-resistant seal member having a body layer disposed thereon.
【請求項2】 前記独立気泡を減圧独立気泡で形成した
請求項1記載の高耐熱性シール部材。
2. The highly heat-resistant sealing member according to claim 1, wherein said closed cells are formed of reduced-pressure closed cells.
【請求項3】 前記発泡体層の少なくとも高温シール面
側の見掛け密度が0.2〜1.2g/cmで、気泡の
80%以上が10〜1000μm径の独立気泡からなる
請求項1記載の高耐熱性シール部材。
3. The foam layer has an apparent density of at least 0.2 to 1.2 g / cm 3 on the high-temperature sealing surface side, and 80% or more of the cells are closed cells having a diameter of 10 to 1000 μm. High heat-resistant sealing member.
【請求項4】 前記発泡体層の低温側に透明石英ガラス
層を設け、該石英ガラス板と低温側接触面をOリングを
介して面接触可能に構成したことを特徴とする請求項1
記載の高耐熱性シール部材。
4. A transparent quartz glass layer is provided on the low-temperature side of the foam layer, and the quartz glass plate and the low-temperature side contact surface can be brought into surface contact via an O-ring.
The highly heat-resistant sealing member as described in the above.
【請求項5】 前記石英ガラス発泡体の、Na、K、L
i、Cu、B、Ca、Ni、Fe、Ceの含有金属不純
物量が、それぞれ0.5ppm以下である請求項1記載
の高耐熱性シール部材。
5. The quartz glass foam according to claim 1, wherein Na, K, L
The highly heat-resistant seal member according to claim 1, wherein the metal impurity content of each of i, Cu, B, Ca, Ni, Fe, and Ce is 0.5 ppm or less.
【請求項6】 前記石英ガラス発泡体のOH基が100
ppm以下で、含有窒素濃度が0.01wt%以上であ
る請求項1記載の高耐熱性シール部材。
6. The quartz glass foam has an OH group of 100.
2. The highly heat-resistant seal member according to claim 1, wherein the content of nitrogen is 0.01 ppm by weight or less.
【請求項7】 前記石英ガラス発泡体層を構成する発泡7. Foaming constituting the quartz glass foam layer
体のヤング率が石英ガラスのヤング率の1/10〜1/The Young's modulus of the body is 1/10 to 1/1 / the Young's modulus of quartz glass
4である請求項1記載の高耐熱性シール部材。The high heat-resistant seal member according to claim 1, wherein
JP06300893A 1993-02-26 1993-02-26 High heat resistant seal member Expired - Fee Related JP3193181B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP06300893A JP3193181B2 (en) 1993-02-26 1993-02-26 High heat resistant seal member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06300893A JP3193181B2 (en) 1993-02-26 1993-02-26 High heat resistant seal member

Publications (2)

Publication Number Publication Date
JPH06256028A JPH06256028A (en) 1994-09-13
JP3193181B2 true JP3193181B2 (en) 2001-07-30

Family

ID=13216867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06300893A Expired - Fee Related JP3193181B2 (en) 1993-02-26 1993-02-26 High heat resistant seal member

Country Status (1)

Country Link
JP (1) JP3193181B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3412734B2 (en) * 1996-08-07 2003-06-03 株式会社山形信越石英 Semiconductor wafer reaction vessel and heat treatment apparatus using the vessel

Also Published As

Publication number Publication date
JPH06256028A (en) 1994-09-13

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