JP3190193B2 - How to use thin film magnetic head - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film magnetic head used as a reproducing head of a magnetic recording / reproducing apparatus.

[0002]

2. Description of the Related Art In recent years, the density of magnetic recording has been increased, and VT
In R 500Mb / inch ^2, the HDD 200Mb / inch ²
Has been commercialized. In these systems, an inductive magnetic head is mainly used. However, recently, a magnetoresistive thin-film magnetic head equipped with a magnetoresistive element is used not only in a system for reproducing a tape medium of a fixed head system, but also in a small-sized one having a relative speed as low as several meters / second. HDD
Are also beginning to be used instead of inductive magnetic heads due to their high S / N ratio.

Conventionally, in a magnetoresistive thin-film magnetic head, a portion where a resistance is changed by sensing a signal magnetic field (hereinafter, referred to as a portion).
For the MR element, a NiFe alloy (hereinafter, abbreviated as permalloy) is used. Even if Permalloy has good soft magnetic properties, the magnetoresistance change rate is about 3% at the maximum, and when used for an MR element for a magnetic recording medium having a small size and a large capacity, the magnetoresistance change rate is small. Insufficient. For this reason, a material exhibiting a more sensitive change in magnetoresistance is desired as an MR element material.

On the other hand, recently, in a magnetic film having a two-layer structure, a spin valve phenomenon in which the electric resistance changes depending on the angle between the magnetizations of the two magnetic films, or in a magnetic film having a multilayer structure, adjacent to each other. It has been reported that the electrical resistance greatly changes depending on the angle formed by the magnetization of the magnetic film.

As a first example of such a magneto-resistance effect element, an artificial lattice type Fe / Cr or Co / Cu
Giant magnetoresistive change, up to 100%
It is known that a large magnetoresistive change exceeding that of Phys. Rev. Lett., Vol. 61, 2472 (1988), Phys. Rev. Let
t., Vol. 64, 2304 (1990)). It has also been reported that when the thickness of the nonmagnetic film is changed, the rate of change in magnetoresistance changes periodically. Alternatively, it is described that this occurs due to antiferromagnetic coupling. When the electric resistance of the multilayer film is compared in the coupled state, it is high in the antiferromagnetic coupling state and low in the ferromagnetic coupling state.

On the other hand, when a magnetoresistive effect film having a high antiferromagnetic coupling state is used in a magnetoresistive effect element, the saturation magnetic field increases due to its large coupling force. Therefore, there have been reported a number of methods using the difference in resistance between a state where the magnetization is parallel and a state where the magnetization is antiparallel, without using the antiferromagnetic coupling state.

That is, as a second example of the magnetoresistance effect element, two types of films having different coercive forces are used, and the magnetization of both magnetic films is changed to an anti-parallel state by utilizing the difference between the coercive forces. (The Journal of the Japan Society of Applied Magnetics Vol.1
5, No.5 813 (1991), so-called Shinjo type).

Further, as a third example of the magnetoresistive effect element, an exchange bias by an antiferromagnetic film is applied to one of two magnetic films sandwiching a nonmagnetic film to fix magnetization, and the other magnetic film is There is an example in which a magnetization reversal by an external magnetic field creates a state in which the magnetization directions of a magnetic film are parallel and antiparallel to each other across a non-magnetic film, thereby realizing a large magnetoresistance change (Phys. Rev. B. , Vol.45806 (1992), J.Appl.P
hys., Vol. 69, 4774 (1991), so-called spin valve type).

[0009]

FIG. 68 shows a conventional magnetoresistive element, and its problem will be described.

The first object of the present invention is as follows.

In a conventional magnetoresistive element, for example, a base film 202a, a soft magnetic film 202b, a nonmagnetic film 202c, a soft magnetic film 202d having a high magnetic permeability responding to a signal magnetic field, and a protective film 202e are sequentially laminated. The lead 201 is formed on the patterned protective film 202e. In such a configuration, contact areas B for connecting the leads 201 are provided at both ends of the area A corresponding to the track width. Here, since the soft magnetic film 202d exists in the contact region B, the recorded information is also sensed from this portion. For this reason, when the track is off-track, information from the adjacent track is also mixed, the S / N is deteriorated, and the track width is not clear. For example, 200 Mb / in
If the recording density of ch ^2, the track width is 7 [mu] m, distance between tracks is approximately 2 [mu] m. In this case, since the track width is relatively large and the output is large, the contact area B is 1 μm.
When the distance was set to about m or less, the contact area B did not exist on the adjacent track, and the leakage output (crosstalk) from the adjacent track could be neglected in the off-track with the inter-track distance of 1 μm or less.

However, for example, an area density of 10 Gb / inch
^{In the case of 2} , the track width is 1 μm and the distance between tracks is 0.2
Since the thickness is on the order of μm, the output itself is also small, and the contact area B exists on the adjacent track during off-track, and the leakage output from the adjacent track cannot be ignored. To avoid this, the contact area B may be reduced to about 0.2 μm, which is the distance between tracks.
Ohmic contact failure is likely to occur during mass production.

As described above, the area density is 10 Gb / inch ²
, The contact area B during off-track
The leakage output from adjacent tracks at
If the area of the contact region B is reduced to avoid such a problem, there is a problem that it is difficult to make an ohmic contact even.

The second object of the present invention is as follows.

In a conventional magnetoresistive element utilizing the anisotropic magnetoresistance effect, a method for accurately defining the track width is as shown in FIG.
This is a method of extending a region corresponding to the track width of d in the inflow direction of the signal magnetic field. In this case, the demagnetizing field in the signal magnetic field direction of the magnetoresistive effect element is reduced and the magnetic permeability is increased, so that the sensitivity to the signal magnetic field is improved. Further, a method of extending a part of the magnetoresistive effect element in a direction opposite to the inflow direction of the signal magnetic field is also known from the viewpoint of the same sensitivity improvement. However, in any case, as shown in FIG. 69, since the sense current for detecting the resistance change flows in a curved manner, the resistance changes according to the angle between the sense current and the magnetization. In a thin film magnetic head utilizing the resistance effect, even if the magnetization direction of the magnetoresistive film changes in response to a signal magnetic field, the rate of change in resistance is insufficient and a stable output cannot be obtained. In particular, since the curvature of the sense current increases as the track width decreases, there is a problem that it is extremely difficult to obtain a stable output.

The third object of the present invention is as follows.

FIG. 70 shows a conventional magnetoresistive element.
(A) and two magnetic films sandwiching a non-magnetic film as shown in FIG. 70 (B), in which a sense current flows in the signal magnetic field direction and a magnetic field due to the sense current is applied to the magnetic film as a bias magnetic field. (J. Appl. Phys. 53 (3), 25
96, 1982). In FIG. 70, reference numeral 205 denotes a lower magnetic film, 206 denotes a non-magnetic film, 207 denotes an upper magnetic film, and 208a and 208b denote leads. In the figure, a sense current enters, for example, from a lead 208a and flows out from a 208b. The magnetoresistance effect element having such a configuration is affected by a magnetic field generated by a sense current. Considering that a magnetic field due to a current flowing through the lower magnetic film 205 and the non-magnetic film 206 is applied to the upper magnetic film 207, the magnitude of the magnetic field due to the sense current when the thickness of each layer is equal to or less than the mean free path of conduction electrons. Is obtained by the following equation (1). The mean free path is about 300 angstroms at 300 K in the case of bulk Cu.

H _{x1 to} J * (t + d) / 2 (1) For example, current density J = 2 × 10 ⁷ A / cm ² , lower magnetic film 2
05, thickness t = 20 angstroms, non-magnetic film 206
When the width d = 50 angstroms, H _x ７００700
(A / m) = 9 (Oersted).

The magnetic field H _x2 applied to the lower magnetic film 205 is H _x2 = −H _x1 because it is caused by the current flowing through the upper magnetic film 207 and the non-magnetic film 206.

Therefore, under these conditions, the magnetic moments of the upper magnetic film 207 and the lower magnetic film 205 are antiparallel when the anisotropic magnetic field of each layer is as small as a permalloy thin film (up to 3 Oersted). Become. However,
At the element edge, there is a domain wall called an edge curling wall due to the effect of a demagnetizing field (IEEE Trans. Magn., Vo
l.24, No. 3, May 1988), this portion is substantially a dead area.

In such a magnetoresistance effect element,
If the magnetic moment in each layer is uniform in the layer, the ability of the element can be used to the maximum. However, when the edge curling wall is present, the magnetic moment is not uniform, and the response to the signal magnetic field is deteriorated in that portion. Therefore, the reproduction output of the magnetoresistive element decreases by the proportion of the edge curling wall.

When magnetic anisotropy is provided in the width direction of the element, the width of the edge curling wall is obtained by the following equation (2) (IEEE Trans. Magn., Vol. 24, N.
o.3, May 1988).

ΠΔ / 2 = {π ³ M _s * d * t / (2 * H _k )} ^0.5 (2) where M _s represents the saturation magnetization and H _k represents the magnitude of the anisotropic magnetic field. . For example, in the above element configuration, when H _k = 3 Oe and M _s = 800 G, πΔ / 2 = 0.2 μm
Becomes When a sense current is applied, H _{k in} equation (2) is H
Since the _k + H _x, the πΔ / 2 = 0.1μm.

In the case of ultra-high density magnetic recording with an areal density of 10 Gb / inch ² , the area per bit is about 0.07 μm ² and the track width is 1 μm or less. At this time, the dimensions of the element are also about the same (1 μm square). Therefore, the ratio of the width of the edge curling wall to the entire device is as large as 20%, and only 80% of the device can be used as an active region. This problem becomes a problem not only in the case of two magnetic films but also in the case of alternately laminating magnetic films and non-magnetic films.

As described above, in a magneto-resistance effect element in which magnetic films and non-magnetic films are alternately laminated, the magnetic moment of each layer tends to be parallel to the end of the element, and edge curling occurs. A wall occurs. When the element is miniaturized, the ratio of the edge curling wall to the entire element increases. In an extreme case, the magnetization near the center also has a component parallel to the end. Therefore, there is a problem that the reproduction output of the magnetoresistive effect element is reduced.

If an antiferromagnetic film is arranged on at least one side of the magnetoresistive element to give uniaxiality in the width direction, the edge curling wall will be eliminated. Since the film has very poor corrosion resistance, it is not possible to adopt a configuration in which this antiferromagnetic film is exposed to the outside.

The fourth object of the present invention is as follows.

In the case of a conventional magnetoresistive element using permalloy or the like, the occurrence of Barkhausen noise due to irreversible motion of magnetic domains appearing in a magnetic film is a practical problem. As a technique for preventing this, FeMn
To obtain an exchange bias by stacking antiferromagnetic films such as
It has been proposed to arrange a magnetic film into a single magnetic domain by disposing a magnetic material near both ends of the element (IEEE MAG-14,
521 (1978), JP-A-64-1112).

However, conventionally, as described above, it has been attempted to apply a unidirectional bias magnetic field to a single magnetic layer or a multilayer magnetic film in which the magnetization of each magnetic film has the same direction. However, there is no report yet on a technique for forming each magnetic film into a single magnetic domain when the number of magnetic films is three or more and the magnetization of each magnetic film is not in the same direction, for example, in an antiparallel state.

The fifth object of the present invention is as follows.

As shown in FIG. 70, in the case of a conventional thin film magnetoresistive element in which the direction of a signal magnetic field and the direction of a sense current for detecting a change in resistance are substantially parallel, the direction of the medium facing surface where the magnetic flux density is the highest is increased. Since the leads are arranged, the length of the magnetoresistive element is usually set to 10 μm in the same direction as the signal magnetic field direction.
To some extent, the permeability of the magnetoresistive element is increased to reduce the demagnetizing field in the signal magnetic field direction. Therefore, the length of the magnetoresistive element in the signal magnetic field direction is longer than that in the track width direction orthogonal thereto. However, since the magnetic flux flowing into the magnetoresistive element leaks away from the medium facing surface with respect to the recording medium, the resistance of the magnetoresistive effect element changes by 1 to 2 μm from the medium facing surface.
There is a problem that only the region of m is provided, and the sensitivity is reduced. Further, since the length of the magnetoresistive element is set to be as large as about 10 μm, the resistance value increases, and accordingly, Johnson noise due to heat generation increases.

The sixth object of the present invention is as follows.

In the above-described spin-valve type magnetoresistive element, the magnetization of the upper magnetic film is exchange-coupled with an antiferromagnetic film such as FeMn formed on the upper magnetic film to fix the magnetization, while the lower magnetic film is fixed. Is performed by reversing the magnetization of the magnetic film with a signal magnetic field to make the magnetizations of adjacent magnetic films parallel or antiparallel to each other to detect a change in resistance.

However, the exchange bias is exerted by the antiferromagnetic film as described above, and the exchange bias in the magnetoresistive effect element is reduced.
When one of the two magnetic films is a fixed magnetization film,
^When the resistance change rate is measured by passing a large current of ⁶ A / cm ² or more, there is a problem that the resistance change rate is often significantly reduced due to heat generation.

The present invention has been made in view of the first to sixth problems.

That is, according to the first aspect of the present invention, a magnetoresistive element capable of strictly defining a track width, having little influence of crosstalk from an adjacent track during off-track, and having good ohmic contact with a lead. It is an object of the present invention to provide a thin-film magnetic head having:

A second object of the present invention is to provide a thin-film magnetic head provided with a magnetoresistive element having good sensitivity and capable of obtaining a stable output.

A third object of the present invention is to provide a thin-film magnetic head having a magnetoresistive element capable of obtaining a large output without an edge curling wall.

A fourth object of the present invention is to provide a thin-film magnetic head provided with a magnetoresistive element having three or more magnetic films with little Barkhausen noise.

A fifth invention of the present invention is to provide a thin film magnetic head having a magnetoresistive effect element which has good sensitivity even when a sense current is applied in the direction of a signal magnetic field and has a small Johnson noise due to heat generation. Aim.

According to a sixth aspect of the present invention, there is provided a thin-film magnetic head including a magnetoresistive element having a magnetization fixed film, wherein the resistance change rate is hardly reduced even when a large current is applied. Aim.

[0042]

SUMMARY OF THE INVENTION In order to achieve the above object, the present invention relates to a thin-film magnetic head having a spin-valve type, Shinjo type or artificial lattice type magnetoresistive element. Has a basic structure in which at least a magnetic film, a non-magnetic film, and a magnetic film are sequentially laminated on a substrate. Here, as the material of the magnetic film, Co, CoFe, Co
Ni, NiFe, Sendust, NiFeCo, Fe ₈ N
And the like. Further, Co _100-x Fe
_A magnetic film made of _x (0 <x ≦ 40 at%) is preferable because it has a large resistance change rate and low Hc. The thickness of the magnetic film is preferably 1 to 20 nm. In the present invention, the magnetic film may be any one of ferromagnetic and ferrimagnetic. The materials of the nonmagnetic film include Mn, Fe, Ni, Cu, Al, Pd, Pt, and R.
non-magnetic metal such as h, Ru, Ir, Au, or Ag, and C
uPd, CuPt, CuAu, CuNi alloy and the like can be mentioned. The thickness of the nonmagnetic film is preferably 0.5 to 20 nm, particularly preferably 0.8 to 5 nm.

Further, the thin-film magnetic head of the present invention may include a magnetoresistive element having a structure in which the magnetic film and the non-magnetic film are alternately stacked in a plurality of cycles as described above. Also, the magnetoresistive element here is
It may have a ferromagnetic film, an antiferromagnetic film, and the like, which are exchange-coupled with the magnetic film.

The response of the magnetoresistive element of the thin-film magnetic head of the present invention to the signal magnetic field is not linear with respect to the magnetic field. If linearity is required for signal processing, it is necessary to provide a means for applying a bias magnetic field in a direction parallel to the sense current. When the easy axis is in a direction parallel to the sense current, when a magnetic field is generated by the sense current, the magnetizations of the two magnetic films rotate in a direction opposite to each other by a certain angle from the easy axis. This angle is an angle determined by the balance between the anisotropic magnetic field of the magnetic film, the magnetic field generated by the sense current, and the demagnetizing field.
Values up to degrees are possible. When a signal magnetic field acts, the magnetizations of the two magnetic films rotate in directions parallel to each other and in opposite directions, and the electric resistance decreases. If the magnetic field due to the maximum sense current allowed by the reliability of the magnetoresistive element is perpendicular to the angle between the magnetizations when no signal magnetic field acts, the change in electrical resistance with respect to the signal magnetic field Good linearity.

In the present invention, the magnetizations of the two magnetic films are opposite to each other in a state where the signal magnetic field is 0 and are oriented in the easy axis direction, and the electric resistance has the maximum value. Therefore, since all possible changes in electric resistance of the magnetoresistive element can be used, a large output can be obtained. According to the configuration of the present invention,
Since the magnetic field is detected using the magnetization rotation, the magnetic field can be detected at a high frequency.

Hereinafter, the magnetoresistance effect element of the present invention will be described in detail.

According to a first aspect of the present invention, there is provided a magnetoresistive effect element having at least two magnetic films and a non-magnetic film sandwiched between the magnetic films, wherein the magneto-resistance effect element is substantially external to the magnetic films. Provided is a thin-film magnetic head, wherein a width of a magnetic film responding to a magnetic field is equal to or less than a distance between leads.

In the first invention, at least one magnetic film substantially responding to a signal magnetic field is processed with a track width, for example, a non-magnetic film slightly larger than the track width or other than the track width of another magnetic film. It is preferable to make electrical contact between the lead and the magnetoresistive effect element at the portion.

Further, all the magnetic films and non-magnetic films are strictly processed with a track width, and the antiferromagnetic film and the hard magnetic film for fixing the magnetization are processed to be slightly larger than the track width. It is preferable to provide a lead (contact region) in a portion other than the track width of the hard magnetic film. Alternatively, for example, it is preferable to provide a conductive base film, leave at least the base film in the contact region with the lead, and remove the contact region of at least the soft magnetic film by etching. In such a first aspect, the lead is disposed outside the magnetic film that substantially responds to the signal magnetic field.

In the first aspect, the area responding to the magnetization information of the magnetic recording medium is strictly only between the leads. As a result, if an off-track is smaller than the inter-track distance, crosstalk from an adjacent track can be reduced to a negligible level, and the track width can be strictly defined.

Since the contact region does not completely respond to the signal magnetic field, the contact region can be enlarged as it extends over the adjacent track. Thus, the ohmic contact between the lead and the magnetoresistive element can be ensured by taking the above-described appropriate steps.

The first invention can be applied not only to a magneto-resistance effect element having a multilayer structure but also to a shunt-bias type magneto-resistance effect element.

According to a second aspect of the present invention, there is provided a magnetoresistive element having at least two magnetic films and a nonmagnetic film sandwiched between the magnetic films and utilizing a magnetoresistance change due to spin-dependent scattering. A thin film magnetic head, wherein at least a part of a magnetic film in the magnetoresistive element that responds substantially to a signal magnetic field extends in the same direction as the signal magnetic field.

In the second invention, the magnetic film extending in the signal magnetic field direction may be a ferromagnetic film exchange-coupled to one of the at least two magnetic films, or a magnetic film extending from the at least two magnetic films. It may be one. The magnetic film extending in the signal magnetic field direction may extend in either the direction toward the recording medium (the signal magnetic field inflow direction) or the opposite direction, or may extend in both directions.

Further, in the second invention, the magnetic black extending in the signal magnetic field inflow direction is exposed on the medium facing surface,
It is preferable that other layers constituting the magnetoresistive element are recessed from the medium facing surface. At this time, a layer having low corrosion resistance, such as a nonmagnetic film made of Cu or the like and an antiferromagnetic film made of FeMn or the like for applying an exchange bias formed as necessary is recessed from the medium facing surface to be present inside the head. Preferably. Furthermore, it is preferable that the lead be present inside the head by making electrical contact between the lead having a problem with corrosion resistance and the magnetoresistive element in a layer recessed from the medium facing surface.

In the second aspect, the demagnetizing field in the signal magnetic field direction of the magnetic film extending in the signal magnetic field direction is reduced, so that the sensitivity of the obtained thin-film magnetic head is improved. Moreover, at this time, a stable output is always obtained even if the sense current is curved and flows, since the resistance value uses a magnetoresistance change due to spin-dependent scattering that does not depend on the angle between the sense current and the magnetization of the magnetic film. be able to. Furthermore, a spin valve type using an antiferromagnetic film that has a problem of corrosion resistance when exposed to the outside of the head, especially if the structure is recessed from the medium facing surface to a layer other than the magnetic film that substantially responds to the signal magnetic field. A highly sensitive thin-film magnetic head having the above-described magnetoresistive element can be obtained with high reliability. At this time, if the antiferromagnetic film and the magnetic film having the magnetization fixed by the antiferromagnetic film exist inside the head and the magnetic film substantially responding to the signal magnetic field is exposed from the medium facing surface, various elements may be used. The present invention can be applied to a structure, for example, a structure having three or more magnetic films, or a structure of any bias method (for measures against Barkhausen noise). Further, with this structure, the track width can be accurately defined even for a narrow track. In the second aspect, the magnetic film substantially responding to the signal magnetic field may extend in the track width direction.

According to a third aspect of the present invention, there is provided a magnetoresistive element having at least two magnetic films and a non-magnetic film sandwiched between the magnetic films, wherein one of the magnetic films is in a track width direction. And the thickness of the portion corresponding to the width of the other magnetic film is formed to be thicker than the other portion, and when the signal magnetic field is 0, the magnetization of the magnetic film in the track width direction is zero. Provided is a thin-film magnetic head, wherein components are antiparallel to each other.

According to a third aspect of the present invention, there is provided a magnetic device comprising at least two magnetic films, a non-magnetic film sandwiched between the magnetic films, and a ferromagnetic film exchange-coupled to one of the magnetic films. A thin film magnetic head comprising a resistance effect element, wherein the ferromagnetic film extends in the track width direction, and when the signal magnetic field is zero, the magnetization direction of the ferromagnetic film is substantially parallel to the track width direction. I will provide a.

That is, in the first aspect of the third invention, the thickness of the magnetic film partially extending in the track width direction is increased by the width of the other magnetic film. Therefore, a leakage magnetic path can be generated from the portion where the thickness of the magnetic film changes, and this magnetic field is applied to the end of the other magnetic film in the track width direction, so that the edge curling wall of the other magnetic film is removed. It can be removed.

Further, in the second aspect of the third invention, the ferromagnetic film partially extending in the track width direction is exchange-coupled with one of the two magnetic films. Therefore, a bias magnetic field is applied to the end of the magnetic film exchange-coupled with the ferromagnetic film in the track width direction, so that the edge curling wall of the magnetic film can be removed. Here, it is preferable that the ferromagnetic film exchange-coupled with one of the two magnetic films has a high specific resistance. In the third invention,
It is preferable that a bias magnetic field in the track width direction is applied to the magnetic film partially extending in the track width direction by a hard magnetic film or the like.

In the third aspect, for example, bias magnetic fields substantially parallel to the track width direction and opposite to each other are applied to the two magnetic films. At this time, as described above, the bias magnetic field is sufficiently applied to at least one of the magnetic films also at the end in the track width direction, so that almost no magnetic pole is generated at the end of the magnetic film and the demagnetizing field is eliminated. The edge curling wall is removed. Therefore, even when the track width becomes small or the track becomes narrow, the generation of edge curling wall can be suppressed, and the reproduction output can be prevented from lowering.

According to a fourth aspect of the present invention, there is provided an odd-numbered magnetic film having three or more layers, and a non-magnetic film sandwiched between the magnetic films. A magnetoresistive element in which a magnetization direction of the film is substantially anti-parallel; and magnetized in both directions substantially parallel to the track width direction and substantially in the same direction on both sides of the magnetoresistive element in the track width direction. The two hard magnetic materials for bias application are arranged, and when the signal magnetic field is 0, the magnetization directions of the uppermost and lowermost magnetic films and the two hard magnetic materials for bias application in the magnetoresistive element are changed. A thin-film magnetic head characterized by being substantially the same is provided.

A fourth invention of the present invention has four or more even-numbered magnetic films and a non-magnetic film sandwiched between the magnetic films, and is adjacent to each other when the signal magnetic field is zero. A magnetoresistive element in which the magnetization direction of the magnetic film is substantially anti-parallel, and on both sides of the magnetoresistive element in the track width direction,
Two hard magnetic bodies for bias application, each magnetized in a direction substantially perpendicular to the surface of the magnetic film and in a direction substantially opposite to each other, are arranged on both sides of the magnetoresistive element, and when no signal magnetic field is applied. A thin film magnetic head wherein the magnetization directions of the uppermost and lowermost magnetic films and the two bias applying hard magnetic materials in the magnetoresistive element satisfy a clockwise or counterclockwise relationship. I do.

In the fourth aspect of the present invention, when the number of magnetic films is an odd number, as a means for converting each magnetic film into a single magnetic domain, for example, a magnetic field by a permanent magnet provided adjacent to the magnetic film is used. At this time, a sense current may be supplied in the signal magnetic field direction, and the magnetic field generated by the permanent magnet may be used in combination with the current magnetic field generated by the sense current.

On the other hand, when the number of magnetic films is even, as a means for dividing each magnetic film into a single magnetic domain, for example, a magnetic field by a perpendicular magnetization film arranged adjacent to the magnetic film is used. Also in this case, it is preferable to use a current magnetic field generated by a sense current supplied in the signal magnetic field direction.

In the fourth invention, the sum of a uniform magnetic field from a permanent magnet or a perpendicular magnetization film, a current magnetic field generated by a sense current, and a static magnetic field from another magnetic film is applied to each magnetic film as a bias magnetic field. Is done. Therefore, by controlling the strength of the magnetic field generated from the permanent magnet or the perpendicular magnetization film, the distance between the magnetic film and the multilayer film, the magnitude of the sense current, the dimensions of the multilayer film, etc.
By balancing the uniform magnetic field from the permanent magnet or the perpendicular magnetic film with the current magnetic field and the static magnetic field, when the signal magnetic field is 0, the respective magnetic films whose magnetization directions are substantially antiparallel to each other are respectively set. A bias magnetic field can be applied in the direction, and each magnetic film can be made into a single magnetic domain.

According to a fifth aspect of the present invention, there is provided at least two magnetic films and a non-magnetic film sandwiched between the magnetic films, and a direction of a sense current for detecting a resistance change is a signal magnetic field direction. And a magnetoresistive element substantially parallel to the thin film magnetic head, wherein at least three current terminals are arranged in parallel on the magnetoresistive element at a distance from each other.

In the fifth invention, the direction of the current flowing in the two regions of the magnetic film between the adjacent current terminals is different from the direction of the current flowing in the two regions of the magnetic film between the adjacent current terminals. There are cases. However, from the viewpoint of forming the magnetic film into a single magnetic domain, it is preferable that the currents flowing in the two regions of the magnetic film between the adjacent current terminals be in the same direction.

According to the fifth aspect, the sense current is applied in the signal magnetic field direction, and the lead is also arranged on the medium facing surface side where the density of the magnetic flux flowing from the recording medium into the magnetoresistive element is highest. Therefore, it is preferable to set the length of the magnetoresistive element in the signal magnetic field direction longer than the length in the track width direction. That is, as described above, by setting the length of the magnetoresistive element in the signal magnetic field direction to be long, the demagnetizing field in the signal magnetic field direction of the magnetic film that substantially responds to the signal magnetic field is reduced, and the magnetic permeability is improved. . However, at this time, the magnetic flux flowing to the magnetoresistive element leaks away from the medium facing surface.
In the fifth aspect, normally, a change in resistance of the magnetic film is detected by a current flowing in a region on the medium facing surface side among two regions of the magnetic film between adjacent current terminals.

Further, in the fifth aspect, since the third terminal is also provided on the side opposite to the medium facing surface of the magnetoresistive element, the entire magnetic film is made into a single magnetic domain to remove Barkhausen noise. And sensitivity can be improved. In addition, of the two regions of the magnetic film between the adjacent current terminals, a current value flowing in a region where a resistance change is detected and a current value flowing in a region where a resistance change is not detected are appropriately controlled, thereby suppressing Johnson noise due to heat generation. Is also possible. The fifth invention can be applied not only to a magnetoresistive element having a multilayer structure but also to a shunt bias type magnetoresistive element.

A sixth invention of the present invention has at least two magnetic films and a non-magnetic film sandwiched between the magnetic films, and one of the magnetic films is provided even when a signal magnetic field is applied. A sense current for detecting a change in resistance, wherein the direction of a magnetic field caused by the sense current is the magnetization of a magnetic film that is a magnetization fixed film. A thin-film magnetic head characterized in that current is supplied so as to be substantially the same as the direction.

In the sixth aspect, the magnetic film serving as the magnetization fixed film is magnetization fixed by, for example, exchange coupling with an antiferromagnetic film, and the other magnetic film becomes a magnetic field detection film responding to a signal magnetic field. At this time, it is preferable that the magnetization directions of the two magnetic films when the signal magnetic field is 0 are substantially orthogonal.

According to the sixth aspect of the present invention, the sense current for detecting the resistance change is such that the direction of the current magnetic field is substantially the same as the magnetization direction of the magnetic film serving as the magnetization fixed film. Is applied in a direction substantially perpendicular to the magnetization direction of the magnetic film. Therefore, even if the exchange coupling force between the antiferromagnetic film or the like and the magnetic film serving as the magnetization pinned film is reduced due to heat generated by the electrified particles being energized, the magnetic film serving as the magnetization fixed film retains its magnetization. Since a large current magnetic field is applied in substantially the same direction as the direction, it is possible to prevent a decrease in the rate of change in resistance due to the magnetization direction of the magnetic film serving as the magnetization fixed film becoming unstable.

[0074]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be specifically described below with reference to the drawings. Embodiment A FIG. 1A is a perspective view showing an embodiment of the first invention of the present invention. In the figure, reference numeral 10 denotes a substrate. On the substrate 10, F
An antiferromagnetic film 11 made of eMn or the like or a hard magnetic film made of CoPt or the like is formed. On the antiferromagnetic film 11, a lower magnetic film 12 made of NiFe or the like, a nonmagnetic film 13 made of Cu or the like, and an upper magnetic film 1 made of NiFe or the like.
4 are formed. Further, on the upper magnetic film 14, T
A protective film 15 made of i, SiO ₂ or the like is formed.
In the non-magnetic film 13, the upper magnetic film 14, the protective film 15, and a part of the lower magnetic film 12, regions other than the active region are removed by etching. A lead 16 made of Cu / Cr or the like is formed on the lower magnetic film 12 other than the active region removed by etching.

In the magnetoresistive element shown in FIG. 1A, the entire magnetization of the lower magnetic film 12 is fixed by the antiferromagnetic film 11, and the contact region B of the upper magnetic film 14 is removed by etching. Therefore, the active region of the magnetoresistive effect element is exactly between the leads A. For this reason, since the contact area B does not detect the recording information, the contact area B can be made large.

As will be described later, immediately before the formation of the lead 16, the nonmagnetic film 13, the upper magnetic film 14,
In addition, since the protective film 15 and a part of the lower magnetic film 12 are removed by etching and washed, an ohmic contact in the contact region B can be reliably obtained.

In this device, the nonmagnetic film 13 in the contact region B has been removed by etching, but it is not always necessary to remove it. The lower magnetic film 12 of the contact region B is partially etched away,
The antiferromagnetic film 1 does not need to be removed by etching at all.
If the hard magnetic film 1 or the hard magnetic film has conductivity, it may be entirely removed by etching.

In this case, it is preferable that the thickness of the magnetic film fixed on the side of FeMn is larger than that of the magnetic film on the opposite side. With such a setting, even when the track width is narrow, it is easy to realize the antiparallel state of the magnetization of the upper and lower magnetic films.

FIGS. 1B and 1C and FIGS.
(D) is a perspective view showing another embodiment of the first invention of the present invention. Specifically, FIG. 1B shows a structure in which a part of the nonmagnetic film 13 in the contact region B is also left. FIG.
(C) shows a state where the lower magnetic film 12 of the contact region B is entirely removed by etching. FIG. 2A shows an antiferromagnetic film 11 or a hard magnetic film, a lower magnetic film 12, a nonmagnetic film 13, and an upper magnetic film 1 on an active region of a conductive base film 17.
4 and the protective film 15 are sequentially formed, and the lead 16 is formed on the contact region of the base film 17. FIG.
(B), a lower magnetic film 12, a nonmagnetic film 13, an upper magnetic film 14, an antiferromagnetic film 11 or a hard magnetic film, and a protective film 15 are sequentially formed on an active region of a conductive base film 17, The lead 16 is formed on the contact region of the base film 17. FIG. 2C shows the lower magnetic film 12, the nonmagnetic film 13, and the intermediate magnetic film 1 on the antiferromagnetic film 11 or the hard magnetic film.
8, a non-magnetic film 13, an upper magnetic film 14, and a protective film 15 are sequentially formed, and a lead 16 is formed on the lower magnetic film 12 partially left in the contact region B. In this magnetoresistive element, the magnetization of the lower magnetic film 12 is
Alternatively, the intermediate magnetic film 18 and the upper magnetic film 14 are fixed by a hard magnetic film and respond to a signal magnetic field. FIG. 2D shows the active region A of the conductive base film 17.
A lower magnetic film 12, a non-magnetic film 13, an intermediate magnetic film 18, a non-magnetic film 13, an upper magnetic film 14, an antiferromagnetic film 11 or a hard magnetic film, and a protective film 15 are sequentially formed thereon.
In which the leads 16 are formed on the contact region B of FIG. In this magnetoresistive element, the magnetization of the upper magnetic film 14 is fixed by the antiferromagnetic film 11 or the hard magnetic film, and the intermediate magnetic film 18 and the lower magnetic film 12 respond to a signal magnetic field.

FIGS. 3A to 3E show an example of a manufacturing process of the magnetoresistive element according to the first invention of the present invention.

First, as shown in FIG.
Antiferromagnetic film 11 or hard magnetic film, lower magnetic film 1
2. A non-magnetic film 13, an upper magnetic film 14, and a protective film 15 are sequentially formed, and all the films are etched so as to have a substantially strip shape. Next, as shown in FIG.
Then, an inverse taper resist 19 is formed on the protective film 15 and patterned. This is placed in a vacuum vessel such as a vapor deposition device, and reverse sputtering is performed to protect the contact region with the protective film 15, the upper magnetic layer 14, the nonmagnetic film 13, and the lower magnetic film, as shown in FIG. 12 is etched.

Next, as shown in FIG. 3D, Cr / Cu 16 'is sequentially formed without breaking the vacuum. Thereafter, as shown in FIG. 3E, lift-off is performed by ultrasonic cleaning using acetone or the like, and a magnetoresistive element according to the first invention of the present invention is obtained. Embodiment B1 FIG. 4 is a perspective view showing an embodiment of a spin-valve magnetoresistive element according to the second invention of the present invention.

A lower magnetic film 21 made of a NiFe alloy or the like is formed on a substrate 20. The lower magnetic film 21 extends so that its end face is exposed to the medium facing surface. On the lower magnetic film 21, a nonmagnetic film 22 made of Cu or the like, NiFe
An upper magnetic film 23 and an antiferromagnetic film 24 made of an alloy or the like are sequentially formed, and predetermined portions of these films are removed by etching so as not to be exposed to the medium facing surface. Leads 25 are formed on the antiferromagnetic film 24.

Next, FIGS. 5A to 5C show a method of manufacturing the magnetoresistive element shown in FIG. In addition, FIG.
(C) shows a cross section viewed from the direction A in FIG.

First, a lower magnetic film 21 responsive to a signal magnetic field is formed on a substrate 20 to a thickness of about 8 nm by sputtering. Next, as shown in FIG. 5A, a resist layer 26 is formed in a portion other than a portion where a film such as an antiferromagnetic film 24 to be formed later is formed. Next, as shown in FIG.
The non-magnetic film 22 is formed with a thickness of about 2 nm, the upper magnetic film 23 with a thickness of about 4 nm, and the antiferromagnetic film 24 with a thickness of about 14 nm by a lift-off method. At this time, it is desirable to perform sputter etching before forming these films for the purpose of cleaning the surface of the lower magnetic film 21.

Next, as shown in FIG. 5C, after the resist layer 26 is removed, a part of the lower magnetic film 21 is removed by etching and patterned. Finally, a lead 25 is formed on the antiferromagnetic film 24 by a lift-off method, thereby obtaining a magnetoresistive element as shown in FIG.

In this case, only the lower magnetic film 21 is formed, and then another magnetic film or the like is formed by the lift-off method.
By using a material having good corrosion resistance as the nonmagnetic film 22, another magnetic film or the like can be formed by a lift-off method after forming the lower magnetic film 21 and the nonmagnetic film 22. In this case, the structure is such that the lower magnetic film 21 and the non-magnetic film 22 are exposed on the medium facing surface.

Further, in FIG. 5B, the nonmagnetic film 22 is formed continuously after the formation of the resist layer 26 in the above, but after the formation of the resist layer 26, the nonmagnetic film 22 is further formed of the same material as the lower magnetic film 26. A magnetic film may be formed with a thickness of several nm, for example, about 3 nm, and a non-magnetic film 22, an upper magnetic film 23, and an antiferromagnetic film 24 may be sequentially formed thereon. Embodiment B2 FIG. 6 is a perspective view showing another embodiment of the spin-valve magnetoresistive element according to the second invention of the present invention. The magnetoresistive element shown in FIG. 6 is manufactured as shown in FIGS. 7A to 7C.

First, as shown in FIG.
A lower magnetic film 21 made of a NiFe alloy or the like is
Then, the nonmagnetic film 22 made of Cu or the like is
The upper magnetic film 23 made of an Fe alloy or the like is
An antiferromagnetic film 24 made of Mn or the like is sequentially formed with a thickness of about 14 nm. Next, a resist layer 26 is formed on the antiferromagnetic film 24.

Next, as shown in FIG. 7B, ion beam etching is performed under such a condition that a desired taper angle is formed on these multilayer films, the resist layer 26 is removed, and the lead is formed in the same manner as in Example B1. 25 are formed.

Next, as shown in FIG. 7C, the substrate 20 is polished by a head sliding surface polishing method used in a normal head manufacturing process and driven in the depth direction. At this time, if the antiferromagnetic film 24 is not exposed to the outside, the nonmagnetic film 2
2. There is no problem even if the upper magnetic film 23 is polished. Thus, the magnetoresistive element shown in FIG. 6 is manufactured.

The second invention of the present invention is based on the basic structure of the magnetoresistive elements of Examples B1 and B2, and has various element structures, for example, those having three or more magnetic films, and various measures against Barkhausen. It can be applied to the one that adopts the bias method. Examples in which the second invention of the present invention is applied to these various element structures will be described below. Embodiment B3 FIG. 8 is a perspective view showing another embodiment of the spin-valve magnetoresistive element according to the second invention of the present invention. The magnetoresistive element shown in FIG. 8 is manufactured as shown in FIGS.

As shown in FIG. 9A, the S
An iO ₂ film 27 is formed, and RIE (reactive ion etching) is performed using a CF ₄ gas to form a groove 28 having a desired shape. At this time, a similar groove having such a size that a stopper can be confirmed at the time of polishing is prepared in a place where the head portion is not affected.

Next, as shown in FIG.
The antiferromagnetic film 24 made of n.
The lower magnetic film 21 made of e or the like has a thickness of about 4 nm, the nonmagnetic film 22 made of Cu or the like has a thickness of about 2 nm, and a polysilicon film 29 has a thickness of about 0.5 nm as a stopper during polishing. I do.

Next, as shown in FIG. 9C, the surface is polished to a point in the middle of the stopper or until the stopper almost disappears, and then CDE (chemical dry etching) is performed using CF ₄ gas to perform polysilicon as the stopper. Is removed. Thereafter, as shown in FIG.
An upper magnetic film 23 made of Fe or the like is formed with a thickness of about 8 nm.
Thereafter, a nonmagnetic film 22, an upper magnetic film 23, and an antiferromagnetic film 24 are further formed on the upper magnetic film 23 in the same manner as in Example B1 to obtain a magnetoresistive element having the structure of FIG. Can be

In this embodiment, by arranging the magnetic films which are fixed by the antiferromagnetic film on both sides of the magnetic film responding to the signal magnetic field, the rate of change in resistance can be improved about twice. it can. In addition, the sensitivity is further improved by making the magnetization direction of the magnetic film by the antiferromagnetic film the signal magnetic field direction and the easy axis direction of the magnetic film responding to the signal magnetic field to the track width direction to make the magnetization orthogonal to each other. I do. In addition, only the magnetic film that responds to the signal magnetic field is exposed on the medium facing surface, and an antiferromagnetic film and a magnetic film that is magnetization-fixed to the antiferromagnetic film are manufactured inside the head, so that a highly reliable thin-film magnetic head is obtained. Can be Embodiment B4 FIG. 10 is a perspective view showing another embodiment of the spin-valve magnetoresistive element according to the second invention of the present invention. The magnetoresistance effect element shown in FIG.
It is manufactured as shown in FIG.

As shown in FIG. 11A, an amorphous film 35 made of CoZrNb or the like having a thickness of about 1
The lower magnetic film 21 made of CoFe or Co is about 4 nm thick, the nonmagnetic film 22 made of Cu or the like is about 3 nm thick, and the upper magnetic film 23 made of CoFe or Co is formed. Is formed to a thickness of about 4 nm, and an antiferromagnetic film 24 of FeMn or the like is sequentially formed to a thickness of about 14 nm. Further, a resist layer 26 is formed on the antiferromagnetic film 24.

Next, as shown in FIG. 11B, these multilayer films are etched by ion beam etching or the like to remove the resist layer 26. Further, a resist layer having a desired shape is formed at the rear of the etched multilayer film. 32 are formed. Thereafter, as shown in FIG. 11C, the multilayer film is etched so that the amorphous film 35 remains. Here, ion beam etching may be performed, but in general, the lower magnetic film 21 to the antiferromagnetic film 24 are used by utilizing the fact that amorphous is harder to dissolve in a solvent such as acid than crystal.
Alternatively, chemical etching may be performed by selecting a solvent that does not dissolve the amorphous film 35 and dissolves the amorphous film 35. At this time, the amorphous film 35 may be slightly over-etched if soft magnetic characteristics are obtained, and the lower magnetic film 21 may remain. By performing such chemical etching, over-etching of the amorphous film 35 can be prevented.

Finally, lead 2 was made in the same manner as in Example B1.
5 is formed, and the head sliding surface used in a normal head manufacturing process is polished and driven in the depth direction to obtain a magnetoresistive element having a structure shown in FIG.

In this embodiment, the amorphous film 35 which is a ferromagnetic film and the lower magnetic film 21 made of CoFe or Co are used.
And a thin film magnetic head having good soft magnetic characteristics (low coercive force) unique to amorphous and high resistance change rate unique to a spin-valve magnetoresistive element made of a Co-based magnetic film. . Further, the amorphous film 3
Since No. 5 has a high resistance, the shunt of the sense current is small, and the sensitivity does not decrease. The amorphous film 35 and C
An extremely thin (about 1 nm thick) insulating film may be formed between the O-based lower magnetic film 21 and the amorphous film 35 formed of NiFeNb or NiFeNb obtained by adding an additional element to ferrite or NiFe.
A high resistance ferromagnetic film made of Mo or the like may be used. Embodiment B5 FIG. 12 is a perspective view showing another embodiment of the spin-valve magnetoresistive element according to the second invention of the present invention. The magnetoresistive element shown in FIG.
It is manufactured as shown in FIG.

As shown in FIG. 13A, a lower magnetic film 33 made of NiFe is formed on the substrate 20 to a thickness of about 8 nm.
Next, a non-magnetic film 22 made of Cu is formed to a thickness of about 3 nm by C
An upper magnetic film 34 of high coercive force made of oFe or Co is sequentially formed with a thickness of about 8 nm by sputtering. Further, a resist layer 26 is formed on the upper magnetic film 34.

Next, as shown in FIG. 13B, these multilayer films are etched by ion beam etching or the like to remove the resist layer 26. Further, a resist layer having a desired shape is formed on the rear portion of the etched multilayer film. 32 are formed. Thereafter, as shown in FIG.
Is etched by ion beam etching or the like so as to remain. At this time, the lower magnetic film 33 may be slightly over-etched if soft magnetic characteristics are obtained, and conversely, the non-magnetic film 22 may remain.

Finally, lead 2 was made in the same manner as in Example B1.
5 is formed, and the head sliding surface used in a normal head manufacturing process is polished and driven in the depth direction to obtain a magnetoresistive element having a structure shown in FIG.

With this configuration, in the present embodiment, if CoFe or Co is magnetized, the magnetization of the upper magnetic film 34 can be fixed without using FeMn. Further, for example, the magnetization direction of CoFe or Co is set to the signal magnetic field direction,
The leads 25 are arranged as shown in FIG. 12, and the lower magnetic film 3 when the current magnetic field generated from the sense current is a field and the signal magnetic field is 0 is set.
By applying the magnetization of No. 3 in the track width direction, a high resistance change rate with respect to the signal magnetic field can be obtained.

Further, since the lower magnetic film 33 is formed larger than the upper magnetic film 34, the lower magnetic film 33, the non-magnetic film 22 and the upper magnetic film 34 have a problem in the Shinjo type magnetoresistive element having the same shape. Hc can be greatly reduced. In addition, if the high coercive force film is disposed so as to be exposed on the medium facing surface, the influence on the medium may be concerned. Will be resolved. Embodiment B6 FIG. 14 is a perspective view showing another embodiment of the spin-valve magnetoresistive element according to the second invention of the present invention. The magnetoresistance effect element shown in FIG.
It is manufactured as shown in FIG.

As shown in FIG. 15A, a lower magnetic film 2 made of CoFe, Co, or the like having a thickness of 4 nm is formed on a substrate 20.
1. Non-magnetic film 22 made of Cu or the like and having a thickness of about 3 nm, and upper magnetic film 23 made of CoFe or Co or the like having a thickness of 4 nm
Are sequentially formed. Further, a resist layer 26 is formed on a predetermined portion of the upper magnetic film 23.

Next, as shown in FIG. 15B, the non-magnetic film 22 and the upper magnetic film 23 other than the resist layer 26 are removed by ion beam etching or the like. Then, as shown in FIG. 15C, the lower magnetic film 2 extends so as to extend back and forth beyond the nonmagnetic film 22 and the upper magnetic film 23.
1 is removed by ion beam etching or the like, and a lead portion is formed by the method described above, whereby a magnetoresistive element having the structure shown in FIG. 14 is obtained.

In the structure shown in FIG.
As described above, an amorphous film made of CoZrNb or the like is formed as described above, and a portion exposed to the medium facing surface is an amorphous film. You may make it. Further, an antiferromagnetic film or a hard magnetic film is formed on the upper magnetic film 23, and at least the nonmagnetic film 22, the upper magnetic film 23, the antiferromagnetic film or the hard magnetic film exists inside the head, and the lower magnetic film Alternatively, the amorphous film may be exposed on the medium facing surface.

In this case, the antiferromagnetic film or the hard magnetic film functions to fix the magnetization of the upper magnetic film 23. At this time, the magnetization direction may be a track width direction or a direction substantially orthogonal to the track width direction. For example, when the magnetization of the upper magnetic film 23 is fixed in the track width direction, since the easy axis of the lower magnetic film 21 is also in the track width direction, the magnetizations of the upper magnetic film 23 and the lower magnetic film 21 become antiparallel. , Magnetostatically coupled. Therefore, the effect of noise suppression is great, but the sensitivity is reduced. On the other hand, when the magnetization of the upper magnetic film 23 is fixed in a direction substantially orthogonal to the track width direction, the easy axis of the lower magnetic film 21 is in the track width direction.
The magnetizations 1 are substantially orthogonal, and parallel and antiparallel can be realized by a signal magnetic field. Therefore, the sensitivity is sufficient, but the effect of noise suppression is reduced.

When the portion exposed to the medium facing surface is made of an amorphous film, as shown in FIG. 16, the amorphous films 35a and 35b are used to suppress noise.
It is preferable to interpose a nonmagnetic film 37 made of Ta or the like between them. This is because, by forming the amorphous film 35 into a laminated structure, the magnetizations of the upper and lower amorphous films 35 are magnetostatically coupled, and the axis of easy magnetization is more likely to be oriented in the track width direction, thereby suppressing the generation of domain walls. . At this time, a magnetic field in a direction opposite to the magnetization of the lower amorphous film 35b is applied due to the coupling with the upper magnetic film 23, so that the lower amorphous film 35b is made thicker than the upper amorphous film 35a. You may.

In this structure, when the track width is small, the area occupied by the multilayer film becomes small, and the sensitivity may be lowered. On the other hand, by making the shape of the lower magnetic film 21 as shown in FIG. 17, a high-sensitivity magnetoresistive element can be obtained regardless of the track width. Embodiment B7 FIG. 18 is a perspective view showing another embodiment of the spin-valve magnetoresistive element according to the second invention of the present invention. The magnetoresistance effect element shown in FIG.
It is manufactured as shown in FIG.

As shown in FIG. 19A, a lower magnetic film 2 made of CoFe, Co, or the like having a thickness of about 4 nm is formed on a substrate 20.
1. Non-magnetic film 22 made of Cu or the like and having a thickness of about 3 nm;
e, Co, etc., about 4 nm thick upper magnetic film 23, F
an anti-ferromagnetic film 24 of eMn or the like having a thickness of about 14 nm;
A protective film 15 having a thickness of about 10 nm is sequentially formed.
Further, a resist layer 26 is formed on a predetermined portion on the protective film 15.

Next, as shown in FIG. 19B, the nonmagnetic film 22, the upper magnetic film 23, the antiferromagnetic film 24, and the protective film 15 are etched by ion beam etching or the like. Next, a resist layer 26 patterned into a shape as shown in FIG. 19C is formed, and the portions from the lower magnetic film 21 to the protective film 15 are etched by ion beam etching or the like.

Next, without removing the resist layer 26,
As shown in FIG. 19D, a hard magnetic film 36 is formed. After removing the resist layer 26, a resist layer 26 'having a desired shape is formed on the hard magnetic film 36, the lower magnetic film 21, and the protective film 15, as shown in FIG. Thereafter, etching is performed by ion beam etching or the like, and the leads 25 are formed by the above-described method to obtain a magnetoresistive element having a structure shown in FIG.

As described above, by arranging the hard magnetic films 36 on both sides of the lower magnetic film 21, Barkhausen noise caused by the multi-domain property of the magnetic film responding to the signal magnetic field can be suppressed. Since the magnetic film 24 exists inside the head, a thin film magnetic head having high reliability can be manufactured.

Further, as shown in FIG. 18, the respective magnetization directions are controlled such that the magnetization direction of the hard magnetic film 36 becomes the track width direction and the magnetization direction of the antiferromagnetic film 11 becomes the signal magnetic field direction. The magnetization directions of the lower magnetic film 21 and the upper magnetic film 23 can be made substantially orthogonal when the signal magnetic field is 0,
A head with higher sensitivity can be obtained as compared with an element in which these magnetization directions are antiparallel to each other.

Here, the lower magnetic film 21 extends only to the medium facing surface side, that is, the multilayer film portion is
A structure that exists at a side end inside one head may be used. Further, an amorphous film made of CoZrNb or the like is formed as a base film of the lower magnetic film 21 as described above,
A structure may be employed in which a portion exposed to the medium facing surface is an amorphous film, and a multilayer film from the lower magnetic film 21 to the protective film 15 is recessed from the medium facing surface in an intermediate portion.

At this time, the thickness of the hard magnetic film 36 may be equal to that of the lower magnetic film 21. However, the exchange coupling force exerted on the upper magnetic film 23 of the antiferromagnetic film 24 and the hard magnetic film 36 If the thickness can be adjusted in consideration of the magnitude of the anisotropic magnetic field exerted on the film 21 and the like, if it is adjusted, the thickness may be as thick as the upper magnetic film 23. It may be thinner than that. However, considering the influence of the leakage magnetic field of the hard magnetic film 36, it is desirable that the hard magnetic film 36 be thinner than the lower magnetic film 21 as shown in the figure.

Here, if the exchange coupling force exerted on the upper magnetic film 23 of the antiferromagnetic film 24 and the magnitude of the anisotropic magnetic field exerted on the lower magnetic film 21 by the hard magnetic film 36 are further adjusted and taken into consideration, The hard magnetic film 36 and the lower magnetic film 21 do not necessarily have to be bonded, and the hard magnetic film 36 may be formed inside the head without being exposed to the medium facing surface.

Further, by the embedding method shown in the embodiment B3,
As shown in FIG. 20, the hard magnetic film 36, the magnetic insulating film 3
0 are sequentially formed, and the lower magnetic film 21 can be made into a single magnetic domain by magnetostatic coupling with the hard magnetic film 36.

Further, in the hard magnetic film used here, it is desirable that the magnetization is directed in the in-plane direction of the film. For example, as shown in FIG. 18, when the hard magnetic film is disposed on both sides of the magnetic film (the lower magnetic film 21 in FIG. 15) to which the magnetization is fixed, the magnetization of the hard magnetic film has a perpendicular component. In this case, not only does the adverse effect on the magnetization fixation of the lower magnetic film 21 occur, but also a leakage magnetic field is generated in the upper magnetic film 23,
It becomes difficult to control the magnetization state.

As shown in FIG. 20, when a hard magnetic film is laminated with a magnetic film (the lower magnetic film 21 in FIG. 20) to be fixed with a magnetic insulating film 30, the magnetization of the hard magnetic film is reduced. Has a perpendicular component, the magnetization of the lower magnetic film 21 cannot be fixed in-plane, which adversely affects the soft magnetic characteristics of the lower magnetic film. The direction of magnetization of this hard magnetic film largely depends on its crystal structure. That is,
When the hcp (002) orientation becomes strong in the hard magnetic film, the magnetization tends to be oriented in the direction perpendicular to the film surface. Thus, by suppressing the hcp (002) orientation, the magnetization is less likely to be oriented in the direction perpendicular to the film surface, and a good hard magnetic film can be obtained as a bias film for fixing the magnetization.

On the other hand, in the magnetic head manufacturing process,
Hard magnetic films are often produced by a lift-off method. In the lift-off method, so to speak, a hard magnetic film is formed by sputtering in a hole formed in the resist layer.In this method, in order to remove the resist layer after film formation smoothly and to prevent burrs, The target and the substrate need to be opposed. However, when a hard magnetic film is formed by sputtering with a target and a substrate facing each other, hc
There is a problem that the p (002) orientation is likely to occur.

Here, in order to solve this problem, h
For the purpose of suppressing the cp (002) orientation, a CoZrNb amorphous film was used as a base film of the hard magnetic film. The results of X-ray diffraction showing the crystallinity at this time are shown in FIGS. 21A and 21B. Specifically, FIG.
FIG. 21 (B) shows the result when an oPt hard magnetic film was formed with a thickness of 30 nm, and a CoZrNb amorphous film was formed as a base film with a thickness of 20 nm, and then CoPt was formed thereon.
The results when a hard magnetic film is formed with a thickness of 30 nm are shown.
As is apparent from FIG. 21, when the amorphous film is used as the base film, the hcp (00) of the CoPt hard magnetic film is used.
2) The orientation is suppressed. Also, the squareness ratio at this time is 0.6 in the case of CoPt and CoZrN
In the case of b / CoPt, it is as high as 0.85, and it can be seen that the magnetization is easily oriented in the plane when the underlayer of the amorphous film is provided. As described above, it has been found that when a hard magnetic film is used as a bias film for fixing magnetization, it is effective to use a base film of an amorphous film.

Therefore, in the case shown in FIGS. 18 and 20, by forming an amorphous film as a base film on the hard magnetic film, the noise suppressing effect is further enhanced, and the magnetic permeability is improved by preventing the deterioration of the soft magnetic characteristics. Thus, a magnetoresistive element having higher sensitivity can be obtained.

The same effect as described above was recognized even when the amorphous film was formed by oblique incidence sputtering. Furthermore, the effect of this amorphous film is
The present invention can be applied not only to a spin-valve magnetoresistive element but also to a normal single-layer magnetoresistive element.

Further, as the hard magnetic film as described above, a high coercive force fine particle layer can be suitably used. Hereinafter, a specific example in which high coercive force fine particles are attached to the magnetoresistive element with their easy axes of magnetization aligned and an exchange bias is applied will be described. That is, since the high coercive force fine particles are arranged in a state of being in direct contact with the magnetoresistive element, an exchange bias is applied to the magnetoresistive element. Further, since the interaction between the fine particles is weak, the coercive force does not decrease much even when the fine particles are directly bonded to the soft magnetic film. Further, the size of the fine particles is sufficiently smaller than the magnetization fixed region (passive region). Therefore, the exchange bias is uniformly applied to the entire surface of the passive region. Since the fine particles are attached with their axes of easy magnetization aligned in the direction in which the bias magnetic field is to be applied, a bias magnetic field with small dispersion is applied in one direction in the plane. Since the fine particles have uniaxial magnetic anisotropy, even if a strong signal magnetic field exceeding the coercive force enters, the particles can return to the original magnetization state.

Therefore, by applying the bias magnetic field by attaching the high coercive force fine particles to the magnetoresistive effect element,
It is possible to provide a highly reliable and high quality thin film magnetic head.

FIG. 22 is a sectional view showing a magnetoresistive element having a high coercive force fine particle layer as a hard magnetic film. A shunt bias film 41 made of Cu and a magnetoresistive film 42 made of Ni ₈₀ Fe ₂₀ are laminated on a substrate 40. The cross section of the shunt bias film 41 and the magnetoresistive film 42 is patterned in a rectangular shape. A lead 43 is formed on the magnetoresistive film 42 so that a sense current can flow. Further, a FeCo-based high coercive force fine particle layer 44 is formed on the substrate 40 so as to cover both end portions of the magnetoresistive effect film 42. The high coercive force fine particles are needle-like crystals whose major axis is the easy axis of magnetization, and the easy axis of magnetization is oriented along the longitudinal direction in the cross section.

With respect to the magnetoresistive element having such a configuration, a signal magnetic field was applied in a direction substantially perpendicular to the direction in which the sense current was applied, and the relationship between the resistance of the magnetoresistive element and the magnetic field was examined. No discontinuity point associated with Barkhausen noise was observed in the magnetic field curve.

This magneto-resistance effect element is manufactured as follows. First, C is formed on the substrate 40 by sputtering.
u is sequentially formed with a thickness of 5 nm, and Ni ₈₀ Fe ₂₀ is formed with a thickness of 20 nm. Next, the two films are patterned into a rectangular shape of 5 μm × 50 μm. Further, Cu is deposited on Ni ₈₀ Fe ₂₀ by sputtering and patterned to form leads. At this time, the track width (active area) is defined by the read interval.

Next, FeCo alloy fine particles are mixed with an organic binder to form a paint, which is applied over the entire surface of the element while applying a magnetic field along the longitudinal direction of the magnetoresistive element pattern. Furthermore, after applying resist on this,
A high coercive force fine particle layer 44 at both ends of the device is 10 μm × 10
Exposure and development are performed so as to remain at a size of 0 μm. Thus, the magnetoresistance effect element shown in FIG. 22 is obtained.

The volume density (that is, the filling rate) of the high coercive force fine particles in the paint is about 40%. The amount of residual magnetization in the direction in which the long axes of the high coercive force fine particles are arranged (the direction of the axis of easy magnetization) is about 90% of the amount of saturation magnetization. The shape of the magnetic fine particles is about 200 to 300 nm in the major axis direction and about 40 nm in the minor axis direction.

In FIG. 22, the high coercive force fine particle layer 44 is formed only on both ends of the magnetoresistive effect film 42. However, as shown in FIG.
5 may be formed in the active region, and the high coercive force fine particle layer 44 may be formed on the entire surface of the magnetoresistive film 42. Since FIG. 23 is a sectional view, the high coercive force fine particle layer 4
Although it looks as if the lead 4 is formed, actually, only the vicinity of the magnetoresistive film 42 is covered with the high coercive force fine particle layer 44 and the lead 43 is exposed, so that a sense current can be supplied.

The dispersion of magnetization in the high coercive force fine particle layer 44 is generally smaller than that of a single-layer hard magnetic film formed as a thin film. Therefore, by separating the high coercive force fine particle layer 44 and the magnetoresistive effect film 42 by the nonmagnetic magnetic insulating film 45 in the active region in this way, the magnetic flux is generated from the dispersed magnetization component of the hard magnetic film generated when the thin film is formed. Soft magnetic degradation due to the influx of the magnetic flux into the active region is reduced. For this reason,
Better soft magnetism can be obtained in the active region.

At this time, a similar effect can be obtained even in a structure in which the high coercive force fine particle layer 44 is located below the magnetoresistive element. The irregularities on the surface of the high coercivity fine particle layer 44 are as follows:
It is affected by the flatness of the surface of the magnetic insulating film 45.

Further, in the above-described example, FeCo alloy fine particles were used as the high coercive force fine particles, and the filling ratio in the paint was set to about 40%. However, by changing the filling ratio and the material of the high coercive force fine particles, the bias was increased. The magnetic field can be changed. For example, by using γ-iron oxide as the material of the high coercive force fine particles, the bias magnetic field can be reduced to about 1
It was confirmed that the bias magnetic field was increased by increasing the filling rate in the paint.
In addition, as a material of the high coercive force fine particles,
-Similar effects were obtained using iron oxide, chromium oxide, and iron.

In the magnetoresistance effect element shown in FIGS. 22 and 23, the high coercive force fine particle layer 44 functions as a vertical bias film. On the other hand, the operating point bias is given by a shunt current flowing through the shunt bias film 41 provided below the magnetoresistive effect film 42.

FIG. 24 is a sectional view showing another example of a magnetoresistive element having a high coercive force fine particle layer. Here, a rectangular hole is formed in the passive region on the silicon substrate 46 by etching, a high coercive force fine particle layer 44 is formed in the hole, the surface is flattened, and the magnetoresistive film 42 and the lead 43 are formed thereon. Form.

FIG. 25 is a plan view of the magnetoresistive element shown in FIG. When the high coercive force fine particle layer 44 is formed in the hole, that is, when the paint containing the high coercive force fine particles is filled in the hole and heated, the direction indicated by the broken arrow in the drawing (about the longitudinal direction of the magnetoresistive film). (An angle of 45 degrees) and a magnetic field was applied. Examination of the relationship between the resistance and the magnetic field of the magnetoresistive element revealed that Barkhausen noise was suppressed and that a good operating point bias was applied.

This magnetoresistive element is manufactured as follows. First, the silicon substrate 46 is subjected to masking and chemical etching to form holes having a depth of about 5 μm at intervals of 6 μm. Next, FeCo alloy fine particles are mixed with an organic binder to form a paint, which is applied to the entire surface of the silicon substrate 46, and heated while applying a magnetic field in the direction of the dashed arrow shown in FIG. The magnetic fine particle layer 44 is formed. Further, this is subjected to a polishing treatment to remove the high coercive force fine particle layer 44 formed in a portion other than the hole, and the silicon substrate 46 is flattened.

Next, after forming a magnetoresistive film 42 with a thickness of about 20 nm on the silicon substrate 46 by sputtering, this film is patterned into a stripe shape of 30 μm × 2 μm. Thereafter, Cu is formed to a thickness of about 200 nm, and is patterned to form leads 43.

The positional relationship between the lead 43 and the high coercive force fine particle layer 44 can be appropriately selected. For example, if the interval between the high coercive force fine particle layers 44 is shorter than the lead interval, the track width can be defined by the interval between the high coercive force fine particle layers 44.

Further, FIGS. 22 to 25 show examples in which a high coercive force fine particle layer is applied to a magnetoresistive element utilizing anisotropic magnetoresistive effect. Next, a magnetoresistive effect by spin-dependent scattering will be utilized. An example in which a high coercive force fine particle layer is used for a magnetoresistive element will be described. FIG. 26 is a cross-sectional view showing a magnetoresistive element using a magnetoresistive effect by spin-dependent scattering. This magnetoresistive effect element is manufactured as follows.

First, a lower magnetic film 47 of Co ₉₀ Fe ₁₀ having a thickness of 8 nm and a non-magnetic film 48 of Cu
Is formed with a thickness of 3 nm and an upper magnetic film 49 of a Co ₉₀ Fe ₁₀ film with a thickness of 8 nm by sputtering. This multilayer film is patterned into a stripe shape, and leads 43 are formed on the upper magnetic film 49. Next, this was added to FeC
The high coercive force fine particle layer 44 is formed using o-alloy fine particles so that the axis of easy magnetization of the high coercive force fine particles is aligned with the longitudinal direction of the stripe.

In the magnetoresistive element having such a configuration, the magnetization of the upper magnetic film 49 which is in direct contact with the high coercivity fine particle layer 44 is fixed in the longitudinal direction of the stripe. On the other hand, the lower magnetic film 47 can rotate its magnetization following the signal magnetic field. As a result, the angle between the magnetization directions of the upper and lower magnetic films 47 and 49 sandwiching the nonmagnetic film 48 changes according to the signal magnetic field. Therefore, a resistance change due to spin-dependent scattering occurs. The high coercive force fine particle layer 44 may be formed in a region corresponding to the track width. The direction of magnetization is not limited to the longitudinal direction of the stripe, but may be the width direction of the stripe.

The above is an example in which the high coercive force fine particle layer 44 is brought into direct contact with the magnetoresistive effect film 42. Are combined. On the other hand, even when the high coercive force fine particle layer 44 and the magnetoresistive film 42 are in contact with each other with a non-magnetic material interposed therebetween, a bias magnetic field can be applied by the magnetostatic coupling between them. Embodiment B8 FIG. 27 shows an example in which the second invention of the present invention is applied to a yoke type reproducing head. This yoke type reproducing head takes in a magnetic flux by a magnetic gap between the soft magnetic body 50 and the soft magnetic yoke 51 and guides it to the element section 52.

FIG. 28 shows an example in which the second invention of the present invention is applied to a perpendicular recording head. Here, the soft magnetic body 50 also serves as the main magnetic pole for recording. In some cases,
The lead is extended toward the front in the drawing, and the recording coil 5 is extended.
It may be used as 3.

In each case, the soft magnetic body 50 is also extended backward, in order to reduce the demagnetizing field and improve the reproduction sensitivity. Embodiment B9 FIG. 29 is a perspective view showing another embodiment of the spin-valve magnetoresistive element according to the second invention of the present invention. The magnetoresistance effect element shown in FIG.
It is manufactured as shown in FIG.

As shown in FIG. 30A, a lower magnetic film 21 made of NiFe or the like is formed on a substrate 20 to a thickness of about 8 nm, and a resist layer 26 is formed thereon and patterned. Next, as shown in FIG. 30B, a non-magnetic film 22 made of Cu or the like is formed to a thickness of about 3 nm by a lift-off method,
After that, the resist layer 26 is removed. Then, FIG.
As shown in (C), the upper magnetic film 23 made of NiFe or the like
Is formed to a thickness of about 8 nm. At this time, it is desirable to perform sputter etching for the purpose of cleaning the surface of the lower magnetic film 21.

Next, as shown in FIG.
After patterning the non-magnetic film 22 into a desired shape collectively using a normal semiconductor process, the lead 25 is manufactured by a lift-off method. At this time, it is desirable that the lead 25 is formed inside the step portion of the upper magnetic film 23.

With such a structure, in the initial state where there is no signal magnetic field, the magnetization of the portions of the upper and lower magnetic films 21 and 23 separated by the non-magnetic film 22 is changed by the sense current and the film shape in the track width direction. The magnetization of the portion where the upper and lower magnetic films 21 and 23 are coupled is parallel. When a signal magnetic field from the outside flows in, the magnetization of the portion separated by the non-magnetic film 22, which was antiparallel in the initial state, becomes parallel, the resistance changes, and the film functions as a thin-film magnetic head. Further, since the nonmagnetic film 22 is not exposed on the medium facing surface, there is no problem with corrosion resistance.

FIG. 31A shows another spin-valve magnetoresistive element according to the second invention of the present invention. Here, the soft magnetic film 31 exchange-coupled to the lower magnetic film 21 has a larger dimension in the track width direction at a portion away from the medium facing surface than at an exposed portion. Thereby, the magnetization of the soft magnetic film 31 is easily oriented in the track width direction. At this time, FIG.
As shown in FIG. 31A, a hard magnetic film 36 is disposed adjacent to both ends of the soft magnetic film 31 or, as shown in FIG. By applying a bias by means such as lamination, it becomes easy to make the soft magnetic film 31 into a single magnetic domain. further,
As described above, the soft magnetic film 31 is desirably an amorphous film because it can suppress the branch flow and can suppress the influence of the orientation on the hard magnetic film and the antiferromagnetic film. The material thereof is, for example, CoZrNb. And the like. At this time, it is preferable that the portion where the dimension is wide is a curve having a rounded corner rather than a right angle in terms of a single magnetic domain.

Here, especially when the hard magnetic film 36 is laminated on both ends of the soft magnetic film 31, the hard magnetic film 3
In order to suppress the leakage magnetic field from the magnetic layer 6, it is preferable that the magnetic field is laminated only on the soft magnetic film 31, as shown in FIG.
The magnetoresistance effect element as shown in FIG.
It is manufactured as shown in (A) to (D).

As shown in FIG. 33A, a soft magnetic film 31 made of CoZrNb or the like and having a thickness of about 15 nm
Lower magnetic film 2 of about 4 nm in thickness made of CoFe or Co, etc.
1. Non-magnetic film 22 made of Cu or the like and having a thickness of about 3 nm;
e, Co, etc., about 4 nm thick upper magnetic film 23, F
An antiferromagnetic film 24 made of eMn or the like and having a thickness of about 14 nm and a protective film 15 having a thickness of about 10 nm are sequentially formed. Further, a resist layer 26 is formed on a predetermined portion of the protective film 15 by patterning. At this time, the protective film 15 needs to have a high resistance in order to prevent shunting, and it needs to be able to stably perform the subsequent etching.
Therefore, as the protective film 15, a noble metal such as Pd or Pt, which hardly forms an oxide layer, is suitable. Further, it is particularly preferable to have a multilayer structure in which a film made of Pd or the like is laminated on a protective film made of Ti or the like.

Next, as shown in FIG. 33B, the portions from the lower magnetic film 21 to the protective film 15 are etched by ion beam etching or the like. Next, as shown in FIG. 33C, a hard magnetic film 36 is formed by a lift-off method. Next, a resist layer 26 having a shape as shown in FIG. 33D is formed on the soft magnetic film 31, the protective films 15, 21 to 24, and the hard magnetic film 36. Thereafter, etching is performed by ion beam etching or the like, and a lead is formed by a lift-off method as described above, whereby a magnetoresistive element having a structure as shown in FIG. 32 is obtained.

In the above-mentioned structure, considering the absorption of magnetic flux, a head having higher sensitivity can be obtained by using the resist layer 26 'having a pattern shape as shown in FIG. That is, in FIG. 34, the multilayer film extends on the side opposite to the medium facing surface, and the occurrence of domain walls is expected at this part. Therefore, the hard magnetic film 36 also has a shape extending to the side opposite to the medium facing surface. I have. Such a resist layer 26
′, Etching by ion beam etching, etc.
By forming the leads by the lift-off method, a magnetoresistive element having a structure as shown in FIG. 35 is obtained.

As described above, in the magnetoresistive element shown in FIGS. 32 and 34, the hard magnetic film 36 is
It is a structure that is laminated on the above, as shown in FIG.
The hard magnetic film 36 may be laminated below the soft magnetic film 31.
With such a structure, a base film for controlling the orientation of the hard magnetic film 36 can be used. As the base film, for example, the hard magnetic film 36 is made of CoNi or CoC.
When r is used, it is preferable to use Cr.

The magnetoresistance effect element shown in FIG.
It is manufactured as shown in (A) to (C). First, as shown in FIG. 37A, a hard magnetic film 30
Is formed and patterned into a desired shape. Next, as shown in FIG. 37B, the soft magnetic film 31, the lower magnetic film 2
1. A non-magnetic film 22, an upper magnetic film 23, an antiferromagnetic film 24, and a protective film 15 are sequentially formed. Next, as shown in FIG. 37C, the multilayer film is patterned into a desired shape. Thereafter, as shown in FIG. 33 (D) and FIG.
6, the soft magnetic film 31 and the multilayer film are collectively patterned to obtain a magnetoresistive element having the structure shown in FIG. Embodiment B10 FIG. 38 is a sectional view showing an embodiment in which a shield layer is combined with a spin-valve magnetoresistive element according to the second invention of the present invention. A spin-valve magnetoresistive element having a structure in which a sense current flows in the direction of a signal magnetic field as shown in FIG. 14 was manufactured, and a shield layer was arranged thereon as shown in FIG. At this time, the upper shield layer 61 is brought into contact with the lead 62 on the medium facing surface side, this potential is grounded, and the other lead is made high potential. With such a structure, a highly reliable thin-film magnetic head can be obtained without disturbing the potential even when the head comes into contact with the medium during sliding. In this thin-film magnetic head, an insulating layer 64 such as SiO ₂ is formed on a lower shield layer 63, and FIG.
4. An element portion 65 is formed in the same manner as in
4 is formed and patterned, and finally the upper shield layer 6 is formed.
1 is formed. Example B11 The structural dimensions of a spin-valve magnetoresistive element according to the second invention of the present invention will be described with reference to FIG.

In this structure, when the signal magnetic field is 0, the magnetization direction of the soft magnetic film 31 must be controlled by the hard magnetic film 36. Therefore, when the film thickness and the magnetization amount of the hard magnetic film 36 are respectively t _hard and Ms _hard and the film thickness and the magnetization amount of the soft magnetic film 31 are t _amo and Ms _amo ,
It is preferable to appropriately select a film material and a film thickness so that t _hard × Ms _hard is equal to or larger than t _amo × Ms _amo .

When the magnetoresistive element is used as a thin-film magnetic head, the soft magnetic film 31 is preferably thicker so that the tip of the head is not saturated by the signal magnetic field from the medium. Further, the magnetization response of the soft magnetic film 31 must be transmitted to the lower magnetic film 21. Accordingly, the thickness and the magnetization amount of the signal magnetic field response layer of the lower magnetic film 21 are respectively set to t.
_Assuming that _sv and Ms _sv , t _amo × Ms _amo is t _sv ×
It is preferable to appropriately select a film material and a film thickness so as to be equal to or larger than Ms _sv .

Next, the recess distance c will be described. Conventionally, when a single-layer NiFe film is used as the magnetoresistive film, it has been considered that the depth is as good as the characteristic length. However, the thin film magnetic head of the present invention uses a multilayer film exhibiting a giant magnetoresistance effect and has a large rate of change in resistance. Therefore, the recess distance c may be several times the characteristic length.

On the other hand, in consideration of suppressing the generation of the domain wall at the protruding portion, the smaller the protruding portion is, the better. That is, the smaller the recess distance c, the better. Therefore, it is preferable to appropriately set the dimensions so that the distance c is equal to or smaller than the length a of the multilayer film in the signal magnetic field direction in FIG. However, when the thickness of the soft magnetic film 31 is reduced, the domain wall of the soft magnetic film 31 tends to be a Neel domain wall. in this case,
Since the Neel domain wall has a large domain wall width, the recess distance c can be increased. Embodiment B12 FIG. 40A shows a magnetoresistive element according to the second invention of the present invention in which the axes of easy magnetization of the two magnetic films are substantially parallel to the medium facing surface and substantially orthogonal to the sense current direction. It is a perspective view showing an example. In FIG. 40A, the magnetic films 71 and 72 are made of a 50 nm thick CoFe film. The magnetic film 72 is formed such that the length in the signal magnetic field direction is longer than the length of the magnetic film 71. A non-magnetic film 7 made of Cu and having a thickness of several tens nm is provided between the magnetic films 71 and 72.
3 are sandwiched, and constitute a magnetoresistive element. Leads 74 and 75 are connected to side surfaces of the multilayer film so that a direct current can flow.

In such a configuration, the magnetizations of both magnetic films 71 and 72 are not fixed by exchange coupling. The two magnetic films 71 and 72 are provided with magnetic anisotropy such that their easy axes of magnetization are substantially parallel to each other and substantially perpendicular to the sense current direction.

[0165] When the signal magnetic field H does not act, the magnetization M _1, M ₂ of the two magnetic films 71 and 72, by the action of the magnetic field by the sense current I, M _1, M ₂ shown in FIG. 40 (B) As shown in FIG. 5, the directions are substantially antiparallel to each other and substantially parallel to the axis of easy magnetization. The electric resistance at this time is the largest. On the other hand, when the signal magnetic field H in the direction of the arrow shown in FIG. 40 (A) acts, the magnetizations M ₁ and M ₂ of the magnetic films 71 and 72 become M _1H and M _2H of FIG. So that they rotate in opposite directions. That is, the angle between M ₁ and M ₂ is 180 °
To φ (°) shown in FIG. 40 (B). If the signal magnetic field is strong, the angle φ approaches 0 °, and at 0 °, the electric resistance becomes minimum.

Therefore, the signal magnetic field H causes the magnetic film 7
The magnetizations M ₁ and M ₂ of 1,72 can be changed from substantially anti-parallel to substantially parallel, and all the electric resistance changes of 10% or more due to spin-dependent scattering can be used. Further, since the change in electric resistance due to the anisotropic magnetoresistance effect of the CoFe film is 2% or less, a large change in electric resistance with respect to the signal magnetic field can be obtained in the obtained thin-film magnetic head.

In order to stabilize the magnetizations of the two magnetic films, it is desirable that the magnetic valencies appearing at the ends of the magnetic films be substantially equal. For this reason, it is desirable that the product of the saturation magnetic flux density Ms and the film thickness t of the two magnetic films substantially match (M
_{s 1 · t 1 ~Ms 2 ·} t 2). Therefore, Ms ₁ · t
It is preferable to determine the material and dimensions of the magnetic film so as to be _{1 to} Ms ₂ · t ₂ .

FIG. 41A shows another example of the magnetoresistive element according to the second invention of the present invention in which the axes of easy magnetization of the two magnetic films are substantially parallel to the medium facing surface and substantially orthogonal to the direction of the current flow. It is a perspective view which shows the example of. This example is the same as FIG. 40A except that a flux guide 76 made of a magnetic film is attached to the end of the magnetoresistive element. According to this configuration, the signal magnetic field from the medium is guided to the magnetoresistive element through the flux guide 76. The material of the flux guide 76 only needs to exhibit soft magnetic characteristics, and the structure may be a single layer or a multilayer. In FIG. 41 (A) and FIG. 41 (B), the flux guide 76 and the magnetoresistive element are juxtaposed with the same width.
The widths of the two may be different, or a part of the two may overlap. Further, such a flux guide 76 may be disposed at the end of the magnetoresistive element opposite to the medium, or may be disposed both on the recording medium side and on the side opposite to the recording medium. Also, in FIGS. 40 and 41, the leads 74 and 75 are juxtaposed with the same thickness as the magnetoresistive effect element, but the thicknesses of both are different as in the case of the flux guide 76. Or a part of both may overlap.

FIG. 42 also shows another example of the magnetoresistance effect element according to the second aspect of the present invention.
40 except that a magnetic film 72 is formed thereon.
Same as (A). The reason for providing the non-magnetic conductive film 77 is as follows.

In an element having a thin magnetic film as in the present invention, the structure of the magnetic film is generally sensitive to the type of underlying film and the crystal structure. For example, NiF on alumina sputtered film
It is known that the e-film has poor crystallinity, but tends to be easily oriented to fcc by providing a thin underlayer made of Cu, Ta, and Ti. In addition, a magnetic film having poor crystallinity has a large intrinsic electric resistance due to lattice irregularity. In such a magnetic film, the ratio of electric resistance due to spin-dependent scattering to the total electric resistance is small, and as a result, the spin resistance is low. , The resistance change rate in parallel and antiparallel is reduced.

In the magnetoresistive element shown in FIG. 42, when the electric resistance of the nonmagnetic conductive film 77 is small, the sense current I
Is shunted, which may cause a decrease in output. However, since the current in the direction perpendicular to the film surface also contributes to the spin-dependent scattering, even if the electric resistance of the nonmagnetic conductive film 77 is small, the change in electric resistance as a whole increases. In some cases. Also, the magnetic field generated by the divided current does not act to make the magnetization directions of the two magnetic films 71 and 72 substantially antiparallel to each other but to make them substantially parallel to each other. It is difficult for the magnetization directions of the two magnetic films 71 and 7 to be substantially antiparallel to each other only by the magnetic field generated by the sense current I.
When the magnetization directions of the two become substantially antiparallel, a large change in electric resistance with respect to the signal magnetic field can be obtained.

FIG. 43A is a perspective view showing an example of a magnetoresistive element according to the second invention of the present invention in which the axes of easy magnetization of the two magnetic films are substantially parallel to the sense current direction and the signal magnetic field direction. is there. The configurations of the magnetoresistive element and the lead are the same as those in FIG.

When the signal magnetic field and the magnetic field due to the sense current do not act, as shown in FIG. 43 (B), the two magnetic films 71 and 72 are exchange-coupled via the non-magnetic film 73. The directions of the magnetizations M ₀₁ and M ₀₂ of the 72 are substantially parallel to each other and point in the direction of the easy axis of magnetization. On the other hand, when the sense current I is applied, as shown in FIG. 43 (C), a current magnetic field for rotating the magnetization directions of the two magnetic films 71 and 72 in directions opposite to each other is generated, and the magnetic films 71 and 72 are generated.
Magnetic film 7 with a balance between anisotropic magnetic field and demagnetizing field
An angle が あ る between the magnetizations M ₀₁ , M ₀₂ of 1,72 that forms an angle 互 い に
It stabilizes when it reaches (°). Further, the signal magnetic field H
Acts, the magnetizations M ₀₁ and M ₀₂ rotate in the direction of the signal magnetic field H, and the electrical resistance changes. If ψ is around 90 °, the change in electric resistance is linear with respect to a weak signal magnetic field H, the waveform distortion is reduced, and the signal processing is facilitated.

FIGS. 44 and 45 show the magneto-resistance effect element according to the second invention of the present invention in which the axes of easy magnetization of the two magnetic films are parallel to the medium facing surface and substantially perpendicular to the sense current direction. FIG. 4 is an explanatory diagram illustrating a method of applying a bias magnetic field for changing an operating point of a resistance effect element.

In FIG. 44, two magnetic films 71 and 7
2 and the magnetoresistive element composed of the non-magnetic film 73 are the same as those in FIG. 40A, except that the lead 81 for supplying the sense current is crosses the magnetoresistive element. In addition, these magnetoresistive elements and leads 8
1 is held between the shield layers 78. In such a configuration, the sense current is supplied from the terminal 79, passes through the magnetoresistive element, exits from the terminal 80, crosses the magnetoresistive element, and applies a bias magnetic field to the magnetoresistive element. In this case, the magnetic field generated by the current acts in the direction of the hard axis of the magnetoresistance effect element at the portion where the lead 81 intersects with the magnetoresistance effect element. Therefore, the magnetization directions of the two magnetic films 71 and 72 are not antiparallel, but rotate slightly in the direction of the bias magnetic field.

FIG. 45 is a sectional view for explaining the principle of generation of the bias magnetic field. The width of the terminals 79 and 80 is shorter than the length of the magnetoresistive element in the longitudinal direction (current direction), and the shield layer 78, the magnetic films 71 and 73, and the leads 81 form a closed magnetic circuit. Thereby, the magnetic field generation efficiency is improved. In the figure, reference numeral 83 denotes a recording medium.

At this time, the magnetic gap layer 78 'sandwiched by the shield layer 78 and in which the magnetoresistive element is buried is made of a normal material such as Al ₂ O ₃ or Si.
By changing from O ₂ to SiC, Si ₃ N ₄ , or diamond which has excellent thermal conductivity and is suitable for a thin film forming process, it is possible to increase the sense current that can flow to the magnetoresistive element. As a result, the reproduction output is increased, and the reliability of the thin-film magnetic head and the yield in manufacturing are improved.

As can be seen from Table 1 below, SiC and diamond (or diamond-like carbon) correspond to A
It is a material having much higher thermal conductivity than l ₂ O ₃ and SiO ₂ . That is, it is possible to suppress a temperature rise of the magnetoresistive element when a sense current flows through the magnetoresistive element. This means that the maximum sense current that can flow through the magnetoresistive element can be increased. Therefore, it is possible to improve the reproduction output and the reproduction S / N in proportion to the magnitude of the sense current.

Further, SiC and Si ₃ N ₄ are made of Al
Since the film is denser than ₂ O ₃ and SiO ₂ , a film having excellent insulating properties and flatness can be easily obtained. Further, SiC, Si ₃ N ₄ and diamond are Al
_Since it is easier to etch than ₂ O ₃ and SiO ₂ , a highly accurate thin film process can be performed. As a result, the reliability of the thin-film magnetic head is improved, and the production yield is improved.

[0180]

[Table 1] Example C1 In the following example C1, the demagnetizing field in the track width direction of a magnetic film having a width larger than that of other magnetic films is reduced, and a bias magnetic field is applied in the track width direction by a hard magnetic film or the like. Therefore, the magnetization of the magnetic film can be directed in the track width direction.

Further, a leakage magnetic field can be generated from the portion where the thickness of the magnetic film changes, and the magnetic field is applied to the end of the other magnetic film, so that the edge curling wall of the other magnetic film is also removed. Can be.

Therefore, even if the track width is reduced and the element width is reduced, the edge curling wall can be eliminated, and the decrease in the reproduction output can be prevented.

FIG. 46 is a perspective view showing a magnetoresistance effect element according to the third invention of the present invention. In the figure, 90 indicates a substrate. On the substrate 90, a ferromagnetic film 91 made of CoZrNb or the like is formed. On the ferromagnetic film 91, NiF
A lower magnetic film 92 made of e or the like, a non-magnetic film 93 made of Cu or Al ₂ O ₃ or the like, and an upper magnetic film 94 made of NiFe or the like are sequentially formed. The lower magnetic film 92, the nonmagnetic film 93, and the upper magnetic film 94 are patterned by etching so as to have a width smaller than the width of the ferromagnetic film 91.

On the upper magnetic film 94, leads 95a and 95b made of Cu / Cr or the like are formed. On the substrate 90 and on both sides of the ferromagnetic film 91, Co
A hard magnetic film 96 made of Pt or the like is formed.

In the magnetoresistive element having such a configuration, the sense current enters from the lead 95b and flows out of the lead 95a. A current magnetic field in the x direction is applied to the ferromagnetic film 91 and the lower magnetic film 92, and the upper magnetic A current magnetic field in the −x direction is applied to the film 94. The hard magnetic film 96 is magnetized in the x direction, and the easy axis of magnetization of the ferromagnetic film 91, the lower magnetic film 92, and the upper magnetic film 94 is guided in a direction substantially parallel to the x axis.

In this magnetoresistance effect element, FIG.
As shown in, it will be a strong bias magnetic field H _B of the x-direction is applied to the ferromagnetic film 91, the magnetization M ₁ is directed to the x-direction. Since the magnetization M ₂ of the lower magnetic film 92 is exchange-coupled not only with the magnetic field generated by the sense current but also with the magnetization M ₁ of the ferromagnetic film 91, the magnetization M ₂ is also directed in the x direction. Further, a leakage magnetic field H is generated at the end 92 a of the lower magnetic film 92, and is applied to the upper magnetic film 94. In its size at the center of the track width direction of the upper magnetic film 94, substantially the same as the demagnetizing field of the lower magnetic film 92 is given a _{H d ~4πM s * t / w} . Here, M _s is the saturation magnetization of the lower magnetic film 92, t is its thickness,
w is the width in a direction substantially parallel to the x-axis (track width direction). For example, 4πM _s = 10000 Gauss, t = 100
For Angstroms, w = 1 μm, the magnitude is H _d １００100 Oersted. Naturally, a larger magnetic field is generated at the end of the upper magnetic film 94. Accordingly, the magnetization M ₃ of the upper magnetic film 94, the direction of the -x direction for the magnetic field H from the current field and the lower magnetic film 92, becomes small edge curling walls, as the magnetization of the central portion is also parallel to the x-axis Become.

As shown in FIG. 47, the lower magnetic film 92
May be extended in the track width direction, and the lower portions of the nonmagnetic film 93 and the upper magnetic film 94 may be formed thicker than other portions.
As shown in FIG. 48, the hard magnetic film 96 may be formed directly on the lower magnetic film 92. Example C2 In the following Examples C2 to C6, the shapes of the two magnetic films are respectively changed. Specifically, the minimum directions of the demagnetizing fields of the two magnetic films are set to be substantially orthogonal to each other. Therefore, even if a bias magnetic field is not applied to one or both magnetic films by an antiferromagnetic film, a high coercive force film, or the like, the magnetizations are oriented in directions substantially orthogonal to each other and become stable. Therefore, even if heat is generated due to the sense current or friction with the recording medium, the magnetizations remain in the stable directions and the substantially orthogonal relationship is not lost.

The resistance change due to spin-dependent scattering is
This occurs only in the region where the two magnetic films are stacked. Therefore, if a material having a small anisotropic magnetoresistance effect such as a Co or Co ₉₀ Fe ₁₀ film is selected, the track width can be defined by the lamination width regardless of the arrangement of the leads.

As shown in FIG. 50, Co
The ferromagnetic film 101 consisting of ₉₀ Fe ₁₀ was formed in a thickness of 8 nm,
This was patterned into a rectangular shape having a size of 2 μm × 20 μm. Next, Co ₉₀ Fe ₁₀
A magnetic film 103 of 8 nm in thickness and 2 μm × 2
It is patterned into a rectangular shape having a size of μm. Then, Cu
A non-magnetic film 102 made of 3 nm thick is formed.
a magnetic film 103 consisting o ₉₀ Fe ₁₀ was formed in a thickness of 8 nm. Subsequently, the non-magnetic film 102 and the non-magnetic film 102
The upper magnetic film 103 was patterned into a rectangular shape having a size of 2 μm × 20 μm so that its longitudinal direction was substantially perpendicular to the longitudinal direction of the ferromagnetic film 101. Next, the ferromagnetic film 1
A lead 104 was formed by forming a 200 nm-thick Cu layer on the end of No. 01 and patterning it. Thus, a magnetoresistance effect element was manufactured. At this time, the directions of the axes of easy magnetization of the ferromagnetic film 101 and the upper magnetic film 103 are substantially orthogonal as indicated by arrows, and the ferromagnetic film 101 and the lower magnetic film 103 are exchange-coupled.

FIG. 51 shows the signal magnetic field dependence of the resistance change rate of this magnetoresistive element. In addition, the resistance change rate was calculated by the following equation (3). In addition, the signal magnetic field is applied in a direction substantially perpendicular to the direction in which the sense current flows, that is, the ferromagnetic film 101.
Flows in a direction substantially perpendicular to the longitudinal direction of the.

Resistance change rate = (maximum resistance value−saturated resistance value) / saturated resistance value (3) As can be seen from FIG. 51, when the signal magnetic field is 0, the operating point bias is favorably applied. When the signal magnetic field direction and the magnetization direction of the upper magnetic film 103 are substantially parallel, the resistance change rate decreases as the signal magnetic field increases. On the other hand, when the signal magnetic field direction and the magnetization direction of the upper magnetic film 103 are substantially anti-parallel, the resistance change rate increases as the signal magnetic field increases. For example, when the signal magnetic field is about 6 kA / m, the magnetization reversal of the upper magnetic film 103 occurs, and the resistance change rate decreases to almost zero. The magnetoresistance effect element shown in FIG. 52 has a T-shaped structure in which one end surface of the upper magnetic film 103 is flush with the side surface of the ferromagnetic film 101. Magnetic film 103
The same effect can be obtained with a cross-shaped structure that intersects substantially orthogonally. Example C3 As shown in FIG. 52, a ferromagnetic film 101 made of Co ₉₀ Fe ₁₀ was formed on a substrate 100 to a thickness of 8 nm, and this was
It was patterned into a rectangular shape having a size of × 20 μm, and a magnetic film 103 made of Co ₉₀ Fe ₁₀ was formed on the central portion with a thickness of 8 nm, and was patterned into a rectangular shape having a size of 2 μm × 2 μm. Next, a static magnetic field of 4 kA / m was generated by a Helmholtz coil installed in the film forming apparatus, and was made to coincide with the short side direction of the patterned ferromagnetic film 101. Next, a non-magnetic film 102 made of Cu is formed to a thickness of 3 nm
Then, a magnetic film 103 made of Co ₉₀ Fe ₁₀ was formed with a thickness of 8 nm, and an antiferromagnetic film 105 made of FeMn was formed with a thickness of 15 nm. Thereafter, the non-magnetic film 102, the magnetic film 103 on the non-magnetic film 102, and the anti-ferromagnetic film 105 are
It was patterned into a rectangular shape having a size of μm × 20 μm such that the longitudinal direction thereof was substantially perpendicular to the longitudinal direction of the ferromagnetic film 101. Next, Cu was formed with a thickness of 200 nm on the end portion of the ferromagnetic film 101 and patterned to form a lead 104. Thus, a magnetoresistance effect element was manufactured. At this time, the directions of the axes of easy magnetization of the ferromagnetic film 101 and the upper magnetic film 103 are substantially orthogonal as indicated by arrows, and the ferromagnetic film 101 and the lower magnetic film 103 are exchange-coupled.

FIG. 53 shows the signal magnetic field dependence of the resistance change rate of the magnetoresistive element. As can be seen from FIG.
When the signal magnetic field is zero, the operating point bias is applied while the magnetizations of the magnetic film 103 are substantially orthogonal to each other. When the signal magnetic field is increased in the negative direction, since an exchange bias is applied to the upper magnetic film 103 by the antiferromagnetic film 105, the magnetization reversal does not occur in the upper magnetic film 103 up to about 12 kA / m. It can be confirmed that the magnetizations of the two magnetic films are substantially kept in an antiparallel state. On the other hand, when the signal magnetic field is increased in the positive direction, the magnetization directions become substantially parallel to each other, so that the resistance change rate decreases.

When a hard magnetic film made of CoPt or the like is used instead of the antiferromagnetic film 105, the same effect can be obtained by magnetizing the hard magnetic film along the longitudinal direction of the upper magnetic film 103. can get. Embodiment C4 In the embodiment C3, an antiferromagnetic film or a hard magnetic film is used to fix the magnetization of the magnetic film. However, it is also possible to configure a lead arrangement as shown in FIG. 54 and use a current magnetic field. It is possible. That is, the ferromagnetic film 101 and the laminated film of the upper magnetic film 103 and the non-magnetic film 102 are substantially perpendicular to each other so that the ferromagnetic film 101 and the laminated film sandwich the lower magnetic film 103. Are stacked as described above. Further, leads 104 are formed at both ends of the ferromagnetic film 101 and the upper magnetic film 103 as shown in FIG.
Almost half (I _S / 2) of the sense current I _S flows through each of the stacked film of the first and upper magnetic films 103 and the non-magnetic film 102.

[0194] In the magnetoresistance effect element having such a structure, the sense current flowing through the ferromagnetic film 101, an upper magnetic film 103 is magnetized in the direction of drawing in M _2. On the other hand, the ferromagnetic film 101 in the current flowing through the upper magnetic film 103 and the nonmagnetic film 102 is magnetized in the direction of drawing M _1. That is, the respective currents facilitate the magnetizations to be oriented in directions substantially orthogonal to each other. Therefore, the current magnetic field induced by shunting the sense current and flowing in the substantially orthogonal direction stabilizes the operating point bias by making the magnetizations of the ferromagnetic film 101 and the upper magnetic film 103 substantially orthogonal. Example C5 The same effect was obtained by using a laminated film of a magnetic film and a non-magnetic film instead of a single-layer film as the ferromagnetic film or the magnetic film used in Example C2. For example, in Example C2
In _{Co 90 Fe 10 8nm / Co 90} Fe 10 8nm / Cu3
nm / Co ₉₀ Fe ₁₀ 8 nm / Co ₉₀ Fe ₁₀ 8 nm
₉₀ Fe ₁₀ 8 nm / Co ₉₀ Fe ₁₀ 8 nm / Cu 3 nm / Co ₉₀ F
e ₁₀ 8 nm / ML1, ML1 / Co ₉₀ Fe ₁₀ 8 nm / Cu3
The same effect was obtained with nm / Co ₉₀ Fe ₁₀ 8 nm / ML1. However, ML1 is Co ₉₀ Fe ₁₀ 1 nm / (Cu
It means a laminated film of 0.6 nm / Co ₉₀ Fe ₁₀ 1 nm) × n (n = 6). Note that Co ₉₀ Fe _{10 in} ML1 is 5 nm.
The same effect was obtained even when the thickness was made as large as n = 1. Example C6 A similar effect was obtained even when a laminated film of a magnetic film and a non-magnetic film was used instead of a single-layer film as the ferromagnetic film used in Example C3. For example, in Example C3, Fe
_{Mn15nm / Co 90 Fe 10 8nm /} Cu3nm / Co 90 Fe
In ₁₀ 8nm / Co ₉₀ Fe ₁₀ 8nm multilayer film, FeMn1
5 nm / Co ₉₀ Fe ₁₀ 8 nm / Cu 3 nm / Co ₉₀ Fe ₁₀ 8 nm
The same effect was obtained with / ML1. However, ML
1 is the same as Example C5. The same effect was obtained by increasing the thickness of Co ₉₀ Fe _{10 in} ML1 to about 5 nm and setting n = 1. Embodiment D1 FIG. 55 is a schematic view showing an embodiment in which the number of magnetic films is large in the fourth invention of the present invention. This magnetoresistive element has three magnetic films 131, 132, 1 on a substrate.
33 are laminated via the non-magnetic films 134 and 135, and when the signal magnetic field is 0, the magnetization directions of the magnetic films 131 and 133 and the magnetic film 132 are substantially antiparallel due to weak RKKY-like interaction and the like. Has become.

On both sides of the multilayer film, adjacent to the permanent magnets 136a, 136 as hard magnetic bodies for applying a bias magnetic field,
36b are arranged, and are magnetized in substantially the same direction as the magnetic films 131 and 133. For this reason, the magnetic films 131, 1
Magnetic fields H _ext in substantially the same direction are applied to 32 and 133. Further, since each of the magnetic films 131, 132, and 133 is a ferromagnetic material, a static magnetic field is applied to each of the other magnetic films.

FIGS. 56A to 56C schematically show the directions and strengths of the magnetic fields applied to the magnetic films 131, 132, and 133, respectively. Magnetic film 13
Static magnetic field H _21, H ₂₃ from the magnetic field H _ext and the magnetic film 132 from the permanent magnet is applied to the magnetization direction substantially same direction relative to 1,133. Although static magnetic field H _31, H ₁₃ from the magnetic film 131 and 133 is applied to the magnetization direction substantially opposite directions, H _21>
Since H ₃₁ and H ₂₃ > H ₁₃ , a bias magnetic field is applied to the magnetic films 131 and 133 in substantially the same direction as the magnetization direction.

On the other hand, in the case of the magnetic film 132, since the magnetization direction is substantially antiparallel to the magnetization directions of the magnetic films 131 and 133, H _ext is applied in a direction substantially opposite to the magnetization direction. However, the static magnetic field H ₁₂ from the magnetic films 131 and 133,
Since H ₃₂ is applied to substantially the opposite direction and H _ext, by the strength of the magnetic field H _ext generated by the permanent magnet, to adjust the distance of the permanent magnet and the multilayer film and _{(H ext <H 12 + H} 32), magnetic A bias magnetic field substantially in the same direction as the magnetization direction can be applied to the film 132.

When the number of magnetic films is an odd number, in order to stabilize the antiparallel state of the magnetization when the signal magnetic field is 0, the sense current is caused to flow in a direction substantially parallel to the magnetization direction of the magnetic film. Is preferred. Example D2 FIG. 57 is a schematic diagram for explaining the magnetization direction of each magnetic film in the magnetoresistive element according to the fourth invention of the present invention. In this magnetoresistance effect element, four magnetic films 137, 138, 139, and 140 are formed on a substrate by a nonmagnetic film 141,
The magnetic films 13 are stacked via the layers 142 and 143.
The magnetization directions of 7, 139 and the magnetic films 138, 140 are substantially antiparallel to each other when the signal magnetic field is 0. When a sense current is applied to the multilayer film in a direction substantially orthogonal to the magnetization direction of each magnetic film, a current magnetic field due to the sense current is applied in a direction substantially the same as or substantially opposite to the magnetization direction of each magnetic film.

FIGS. 58A to 58D schematically show the directions and strengths of the magnetic fields applied to the magnetic films 137, 138, 139, and 140, respectively. For the magnetic film 137, the magnetic films 138, 139,
140, a magnetic field H _j6 due to the current flowing through the non-magnetic films 141, 142, 143 is applied in substantially the same direction as the magnetization, and the static magnetic field is _generated when the magnetic fields H ₂₁ , H ₄₁ from the magnetic films 138, 140 are applied in substantially the same direction. field H ₃₁ from 139 is applied to the substantially opposite direction, since it is _{H 21> H 31> H 41} , the magnetic field of the sum according to the magnetic film 137 is the magnetization direction substantially the same direction. Magnetic film 1
38, the magnetic field H _j2 caused by the current flowing through the magnetic film 137 and the non-magnetic film 141 is substantially in the same direction.
140, a magnetic field H _j4 due to the current flowing through the non-magnetic films 142 and 143 is applied in substantially the opposite direction (H _j2 <H _j4 ), and the static magnetic field is applied to H ₁₂ and H ₃₂ in substantially the same direction and H ₄₂ in substantially the opposite direction. (H ₁₂ , H ₃₂ > H ₄₂ ). Therefore, by adjusting the magnitude of the sense current and the dimensional ratio of the multilayer film, the magnetic film 1
The sum of the magnetic fields applied to the direction 38 is also substantially the same as the magnetization direction. At this time, due to the symmetry, the magnetic film 139 becomes the magnetic film 13.
8. A magnetic field having the same magnitude as the magnetic field applied to the magnetic film 137 is applied to the magnetic film 140 in substantially the opposite direction, and the respective magnetization directions are also substantially opposite directions, so that a bias magnetic field can be applied in the substantially same direction as the magnetization direction. .

Here, in the fourth invention of the present invention,
When the number of magnetic films is even as described above, in order to further stabilize the substantially antiparallel state of magnetization of the multilayer film, as shown in FIG. 59, the perpendicular magnetization films 144a and 144b are used as hard magnetic materials for applying a bias magnetic field. Are disposed adjacent to both sides of the multilayer film. The uppermost magnetic film 140 and the lowermost magnetic film 137 are perpendicularly magnetized in the same direction as their magnetization directions.
The perpendicular magnetization films 144a and 144b are magnetized in such a direction as to apply the magnetic field _Hext from 4a and 144b. Specifically, the uppermost magnetic film 140 and the lowermost magnetic film 137
And the magnetization directions of the perpendicular magnetic films 144a and 144b should satisfy the relationship of clockwise or counterclockwise as shown in FIG. Embodiment E1 FIG. 60 is a perspective view showing an embodiment of the fifth invention of the present invention. In FIG. 67, Co ₉₀ Fe ₁₀ / Cu / Co ₉₀
A multilayer film of Fe ₁₀ is patterned in a strip shape. At this time, the short side of the laminated film corresponds to the track width.

A sense current (I _{S in the} figure) flows in the longitudinal direction of the multilayer film. By the current magnetic field, the lower magnetic film 151 and the upper magnetic film 153 are magnetized substantially antiparallel to each other. The sense current Is is applied to the lead 15 provided at the center of the multilayer film.
4a, split in two directions, and exit from leads 154b and 154c provided at the ends. Therefore, the direction of the current flowing through the magnetoresistive element becomes opposite to the center lead 154a, so that the magnetization directions of the lower magnetic film 151 and the upper magnetic film 153 are substantially antiparallel to the center lead 154a. become. That, in the figure, the magnetization M ₁ and M ₂ shown by the broken line arrows, and M ₃ and M ₄ is has each set in the vertical magnetization M ₁ and M ₃ in the same magnetic layer, M
₂ and M ₄ are substantially anti-parallel to each other. Therefore, a magnetic domain is formed by the same magnetic film to reduce the magnetostatic energy. As a result, the sense current required to bring the magnetization directions of the upper and lower magnetic films into a substantially antiparallel state can be reduced.

The signal magnetic field flows in from the short side direction of the multilayer film. Therefore, as the aspect ratio of the upper and lower magnetic films is larger, the demagnetizing field is shaped to be smaller, so that the saturation magnetic field is reduced and the sensitivity to the signal magnetic field is improved. Therefore, the sensitivity increases as the length of the upper and lower magnetic films in the signal magnetic field direction is set longer. Moreover, the magnetization of the upper and lower magnetic films is
As described above, the sensing current flows in the longitudinal direction of the upper and lower magnetic films to stabilize.

Further, at this time, as shown in FIG.
By extending the lead 154a into which the current flows and dividing the lead 154a from the upper and lower magnetic films, an operating point bias can be applied by the current magnetic field. In FIG. 68, the inflowing current is I _S , the currents flowing through the upper and lower magnetic films are I _S1 and I _S3, and I _S2 is shunted for operating point bias.

The structure shown in the embodiment E1 can of course be applied to a magneto-resistance effect element of a type in which a magnetic flux flows by using a yoke. Further, in the magnetoresistance effect element shown in Example E1, the edge curling walls of the upper and lower magnetic films can be removed by the following method, for example.

First, FIG. 62 is a cross-sectional view of a magnetoresistive element in which an antiferromagnetic film 155 made of FeMn is formed near the end of a magnetic film where a magnetic charge appears in order to suppress an edge curling wall. That is, this magnetoresistive effect element has a structure in which the antiferromagnetic film 155 is arranged near the end face of the multilayer film of Co ₉₀ Fe ₁₀ / Cu / Co ₉₀ Fe ₁₀ . Each film thickness is Co ₉₀ Fe ₁₀ 8 nm / Cu 3 nm / Co ₉₀
Fe ₁₀ 8 nm. In this stacked state, the magnetoresistive element has a spin valve structure, and a resistance change occurs due to spin-dependent scattering. Further, the antiferromagnetic film 155 is formed with a thickness of 15 nm, and the sense current flows in the signal magnetic field direction. In addition, 150 in FIG. 62 indicates a substrate.

At this time, the magnetization directions of the upper and lower magnetic films are substantially antiparallel to each other as indicated by arrows M ₁ and M _{2 in} the figure due to the current magnetic field. A magnetic charge is generated on the end face of the substrate, and an edge curling wall is generated by the demagnetizing field. In this case, as shown in FIG. 62, the antiferromagnetic film 155 arranged near the end of the upper magnetic film 153 and the upper magnetic film 153 are exchange-coupled, so that the magnetization near the end of the upper magnetic film 153 is fixed. Is done. As a result, magnetostatic coupling is further generated between the upper magnetic film 153 and the lower magnetic film 151, so that even in the lower magnetic film 151 not directly in contact with the antiferromagnetic film 155, the magnetization near the end is easily directed to the end face. . As a result, the occurrence of edge curling walls is suppressed, and a decrease in sensitivity of the magnetoresistive element can be prevented. Note that this structure can be widely applied other than the magnetoresistive element according to the fifth aspect of the present invention.

Next, an example will be described in which the magnetic flux of the upper and lower magnetic films is circulated to suppress the deterioration of the characteristics of the magnetic film due to the edge curling wall. That is, here, as shown in FIG. 63, by forming a magnetic laminated film having a shape covering the end face of the lower magnetic film 151, the recirculation of magnetic flux is likely to occur. FIG. 63 is a cross-sectional view as viewed from the short side of the stacked film, and the sense current flows in the signal magnetic field direction.

When manufacturing such a structure, first, as shown in FIG.
A Co ₉₀ Fe ₁₀ film is formed and patterned as 1.
Next, as shown in FIG. 63B, a Cu film as the nonmagnetic film 152 and a Co ₉₀ Fe ₁₀ film as the upper magnetic film 153 are sequentially formed on the entire surface. Finally, this is patterned again to obtain a magnetoresistive element having a structure in which the end surface of the lower magnetic film 151 is covered with the nonmagnetic film 152 and the upper magnetic film 153.

As shown by arrows in the figure, the upper magnetic film 153 and the lower magnetic film 151 are magnetized substantially antiparallel to each other by the sense current, and the magnetic flux is guided by the upper magnetic film 153 covering the end surface of the lower magnetic film 151. , Upper and lower magnetic films 151, 15
Reflux 3 This structure is useful for both the case where the spin-dependent scattering and the anisotropic magnetoresistance effect are used.

In FIG. 63 described above, first,
The lower magnetic film 151 is patterned, and then the non-magnetic film 15 is patterned.
2 and the upper magnetic film 153 were patterned to form a magnetoresistive element having a structure covering the end face of the lower magnetic film 151. In the following FIG. 64, an example of manufacturing by one patterning will be described.

FIG. 71 is a sectional view showing a magnetoresistive element manufactured by one patterning. Here, in the magnetoresistive element whose sense current direction and signal magnetic field direction are substantially orthogonal to each other other than the magnetoresistive element according to the fifth invention of the present invention, an example in which the edge curling wall is suppressed as in FIG. Show. First, the leads 154 are formed on the substrate 150, and the track width is defined between the leads. On this, the lower magnetic film 151 / non-magnetic film 152 / upper magnetic film 15
3 are sequentially formed. In this embodiment, Co ₉₀ Fe
A laminated film of ₁₀ / Cu / Co ₉₀ Fe ₁₀ was obtained. Finally, the laminated film is patterned.

The laminated film in the track portion has a shape that bends at a portion in contact with the lead 154. At the bent portion, the magnetization generates a magnetic charge and increases the magnetostatic energy. As a result, magnetostatic coupling occurs in which the magnetic flux circulates between the upper and lower magnetic films, and a substantially antiparallel state of magnetization is created.

Further, FIG. 65 shows that, in the same manner as in the fifth invention of the present invention, in the magnetoresistive effect element of the type in which the sense current flows in the signal magnetic field direction, the magnetization of the magnetic laminated film is similarly caused by steps and irregularities. An example of creating an antiparallel state will be described. In FIG. 65, a groove 156 is formed on a substrate 150 along a direction parallel to the sense current direction of the magnetoresistive element. Note that even lower magnetic film 151 / a non-magnetic layer 152 / upper magnetic layer 153 is _{Co 90 Fe 10 / Cu / Co} 90
An Fe ₁₀ laminated film was used.

The magnetoresistive element extends rearward on the plane of the drawing, and the signal magnetic field enters and exits in a direction perpendicular to the plane of the drawing. The sense current I _S passes through lead 154,
It is supplied from the left side of the figure. And Co ₉₀ Fe ₁₀ /
The Cu / Co ₉₀ Fe ₁₀ laminated film flows toward the back on the paper. Therefore, when this structure is applied to the fifth aspect of the present invention, unlike the magnetoresistive element shown in FIG. 61, the current flowing through the magnetoresistive element is all in the same direction over the longitudinal direction. However, also at this time, the upper and lower magnetic films are magnetized in a substantially antiparallel direction by the current magnetic field as shown by the arrow in the figure. The magnetization in the upper and lower magnetic films circulates the magnetic flux at the step formed by the groove 156 to perform magnetostatic coupling. Therefore, as compared with the structure in which the end face is exposed, the magnetic charge does not appear, so that the deterioration of the magnetoresistance effect characteristic due to the generation of the edge curling wall can be suppressed. Embodiment F FIG. 66A shows an embodiment of a magnetoresistive element according to the sixth invention of the present invention. This magnetoresistive element has N
a magnetic film 161 made of iFe or the like, a nonmagnetic film 162 made of Cu or the like, a magnetic film 163 made of NiFe or the like, FeMn
And an antiferromagnetic film 164 of Ta and the like, and a protective film 165 of Ta and the like are sequentially formed. The magnetization of the magnetic film 163 is fixed by the exchange bias of the antiferromagnetic film 164. Further, a lead 166 is formed on the protective film 165. In the magnetoresistive element having the above configuration, when the signal magnetic field _Hex is 0, the magnetization directions of the magnetic films 161 and 163 and the antiferromagnetic film 164 are as shown in FIG.

Next, a method of using the thin-film magnetic head having the above-described magnetoresistive element will be described. here,
A sense current having a high current density of about 10 ⁶ to 10 ⁷ A / cm ² is applied to the magnetoresistive element. As described above, the intensity of the current magnetic field due to the sense current is on the order of about 10 Oe, and since the Neel temperature and the blocking temperature of the antiferromagnetic film used here are about 150 to 300 ° C., heat generated by the sense current is generated. Disturbs that one-way,
The magnetization cannot be fixed. Actually, when operated at a temperature of about 60 to 90 ° C. for a long time, the exchange coupling force deteriorated.

FIG. 67 is a graph showing the relationship between the magnitude of the sense current and the rate of change in resistance. FIG. 66 shows the sense current.
In (B), when current is applied in the −x direction, that is, when the current magnetic field acts in the same direction as the unidirectionality of the antiferromagnetic film (a), the resistance change rate is maintained even at a high current density.
On the other hand, the sense current becomes x in FIG.
When current flows in the opposite direction, that is, when the current magnetic field works in the opposite direction (b), the current magnetic field drops even at about 10 ⁶ A / cm ² . That is, it is understood that the direction of the sense current needs to be selected so as to generate a magnetic field in substantially the same direction as the unidirectionality of the antiferromagnetic film.

[0217]

As described above, the thin-film magnetic head of the present invention has the following effects. That is, the first of the present invention
According to the invention, a thin-film magnetic head having a magnetoresistive element which can precisely define a track width, is less affected by crosstalk from an adjacent track during off-track, and has good ohmic contact with a lead is obtained. Can be

According to the second aspect of the present invention, it is possible to obtain a thin-film magnetic head having a magnetoresistive effect element having good sensitivity and capable of obtaining a stable output.

According to the third aspect of the present invention, a thin-film magnetic head having a magnetoresistive element capable of obtaining a large output without an edge curling wall can be obtained.

According to the fourth aspect of the present invention, a thin-film magnetic head having a magnetoresistive element having three or more magnetic films with little Barkhausen noise can be obtained.

According to the fifth aspect of the present invention, it is possible to obtain a thin film magnetic head having a magnetoresistive effect element having good sensitivity even when a sense current is applied in the direction of a signal magnetic field and having small Johnson noise due to heat generation. .

According to the sixth aspect of the present invention, a thin-film magnetic head having a magnetoresistive element having a magnetization fixed film, which hardly causes a decrease in resistance change rate due to heat generation even when a large current is applied, can be obtained. .

[Brief description of the drawings]

FIGS. 1A to 1C are perspective views showing an embodiment of the first invention.

FIGS. 2A to 2D are perspective views showing another embodiment of the first invention.

FIGS. 3A to 3E are cross-sectional views showing steps of manufacturing the magnetoresistive element according to the first invention.

FIG. 4 is a perspective view showing one embodiment of a spin-valve magnetoresistive element according to the second invention;

5 (A) to 5 (C) are cross-sectional views showing steps of manufacturing the magnetoresistive element shown in FIG.

FIG. 6 is a perspective view showing another embodiment of the spin-valve magnetoresistive element according to the second invention.

FIGS. 7A to 7C are cross-sectional views illustrating steps of manufacturing the magnetoresistive element shown in FIG.

FIG. 8 is a perspective view showing another embodiment of the spin-valve magnetoresistive element according to the second invention.

FIGS. 9A to 9D are cross-sectional views illustrating steps of manufacturing the magnetoresistance effect element shown in FIG.

FIG. 10 is a perspective view showing another embodiment of the spin-valve magnetoresistive element according to the second invention.

FIGS. 11A to 11C are cross-sectional views illustrating steps of manufacturing the magnetoresistive element shown in FIG.

FIG. 12 is a perspective view showing another embodiment of the spin-valve magnetoresistive element according to the second invention.

13A to 13C are cross-sectional views illustrating a process of manufacturing the magnetoresistance effect element illustrated in FIG.

FIG. 14 is a perspective view showing another embodiment of the spin-valve magnetoresistive element according to the second invention.

FIGS. 15A to 15C are perspective views showing steps of manufacturing the magnetoresistance effect element shown in FIG.

FIG. 16 is a perspective view showing another embodiment of the spin-valve magnetoresistive element according to the second invention.

FIG. 17 is a perspective view showing another embodiment of the spin-valve magnetoresistive element according to the second invention.

FIG. 18 is a perspective view showing another embodiment of the spin-valve magnetoresistive element according to the second invention.

19A to 19D are cross-sectional views illustrating a manufacturing process of the magnetoresistive element illustrated in FIG. 18, and FIG. 19E is a plan view illustrating the magnetoresistive element.

FIG. 20 is a perspective view showing another embodiment of the spin-valve magnetoresistive element according to the second invention.

21A and 21B are characteristic diagrams showing X-ray diffraction results indicating the crystallinity of a CoPt hard magnetic film.

FIG. 22 is a sectional view showing a magnetoresistive element having a high coercive force fine particle layer as a hard magnetic film.

FIG. 23 is a cross-sectional view showing a magnetoresistive element having a high coercivity fine particle layer as a hard magnetic film.

FIG. 24 is a sectional view showing a magnetoresistive element having a high coercive force fine particle layer as a hard magnetic film.

FIG. 25 is a plan view of the magnetoresistive element shown in FIG. 24;

FIG. 26 is a cross-sectional view showing a magnetoresistive element having a high coercive force fine particle layer as a hard magnetic film.

FIG. 27 is a side view showing a yoke type reproducing head according to the second invention.

FIG. 28 is a side view showing the perpendicular recording head according to the second invention.

FIG. 29 is a perspective view showing another embodiment of the spin-valve magnetoresistive element according to the second invention.

FIGS. 30A to 30C are cross-sectional views illustrating steps of manufacturing the magnetoresistive element shown in FIG.

FIGS. 31A and 31B are a perspective view and a plan view showing another embodiment of the spin-valve magnetoresistive element according to the second invention.

FIG. 32 is a perspective view showing another embodiment of the spin-valve magnetoresistive element according to the second invention.

33A to 33C are perspective views showing steps of manufacturing the magnetoresistive element shown in FIG. 32, and FIG. 33D is a plan view of the magnetoresistive element shown in FIG.

FIG. 34 is a plan view showing another manufacturing step of the spin-valve magnetoresistive element according to the second invention.

FIG. 35 is a plan view showing another embodiment of the spin-valve magnetoresistive element according to the second invention.

FIG. 36 is a perspective view showing another embodiment of the spin-valve magnetoresistive element according to the second invention.

37 (A) to (C) are perspective views showing steps for manufacturing the magnetoresistive element shown in FIG. 36.

FIG. 38 is a sectional view showing another embodiment of the spin-valve magnetoresistive element according to the second invention;

FIGS. 39A and 39B are a perspective view and a plan view for explaining dimensions of a spin-valve magnetoresistive element according to the second invention.

FIG. 40A is a perspective view showing another embodiment of the spin-valve magnetoresistive element according to the second invention, and FIG.
3 is a schematic diagram showing the magnetization direction of the magnetic film.

41A is a perspective view showing another embodiment of the spin-valve magnetoresistive element according to the second invention, and FIG. 41B is a schematic view showing the magnetization direction of the magnetic film.

FIG. 42 is a perspective view showing another embodiment of the magnetoresistance effect element according to the second invention.

FIG. 43 (A) is a perspective view showing another embodiment of the magnetoresistive element according to the second invention, and FIGS. 43 (B) and (C) are schematic views showing the magnetization direction of the magnetic film.

FIG. 44 is a perspective view showing another embodiment of the magnetoresistance effect element according to the second invention.

FIG. 45 is a sectional view showing another embodiment of the magnetoresistive element according to the second invention;

FIG. 46 is a perspective view showing one embodiment of a magnetoresistance effect element according to the third invention.

FIG. 47 is a perspective view showing another embodiment of the magnetoresistive element according to the third invention.

FIG. 48 is a perspective view showing another embodiment of the magnetoresistance effect element according to the third invention.

FIG. 49 is a schematic view for explaining a magnetization direction in the magnetoresistance effect element according to the third invention.

FIG. 50 is a perspective view showing another embodiment of the magnetoresistive element according to the third invention.

FIG. 51 is a graph showing the relationship between the signal magnetic field and the rate of change of resistance in the magnetoresistance effect element according to the third invention.

FIG. 52 is a perspective view showing another embodiment of the magnetoresistance effect element according to the third invention.

FIG. 53 is a graph showing the relationship between the signal magnetic field and the rate of change of resistance in the magnetoresistance effect element according to the third invention.

FIG. 54 is a plan view showing another embodiment of the magnetoresistance effect element according to the third invention.

FIG. 55 is a perspective view showing another embodiment of the magnetoresistive element according to the third invention;

FIG. 56 is a schematic view showing an embodiment of the fourth invention.

57 (A) to (C) are diagrams schematically showing the direction and strength of a magnetic field of a magnetic film of the magnetoresistive element shown in FIG. 56.

FIG. 58 is a schematic view showing the magnetization direction of the magnetic film of the magnetoresistive element according to the fourth invention.

59 (A) to 59 (D) are diagrams schematically showing the direction and strength of a magnetic field of a magnetic film of the magnetoresistive element shown in FIG. 58.

FIG. 60 is a schematic view showing another embodiment of the fourth invention.

FIG. 61 (A) is a perspective view showing one embodiment of the fifth invention, and FIG. 61 (B) is a plan view showing a lead of the magnetoresistive element according to the fifth invention.

FIG. 62 is a sectional view showing an example of a magnetic laminated film in which a magnetic flux is recirculated.

63 (A) to 63 (C) are cross-sectional views showing steps for manufacturing the magnetic laminated film shown in FIG. 62.

FIG. 64 is a sectional view showing another example of the magnetic laminated film in which the magnetic flux is recirculated.

FIG. 65 is a sectional view showing another example of the magnetic laminated film in which the magnetic flux is recirculated.

FIG. 66A is a perspective view showing a magnetoresistive element according to a sixth invention, and FIG. 66B is a schematic view showing the magnetization directions of a magnetic film and an antiferromagnetic film in the magnetoresistive element shown in FIG. FIG.

FIG. 67 is a graph showing the relationship between the magnitude of the sense current and the rate of change in resistance of the magnetoresistive element according to the sixth invention.

FIG. 68 is a perspective view showing a conventional magnetoresistance effect element.

FIG. 69 is a plan view partially showing a conventional magnetoresistance effect element.

FIGS. 70A and 70B are perspective views showing a conventional magnetoresistance effect element.

[Explanation of symbols]

10, 20, 40, 90, 100, 110, 150 ... substrate, 11, 24, 105, 155, 164 ... antiferromagnetic film, 12, 21, 33, 47, 92, 111, 151 ...
Lower magnetic film, 13, 22, 37, 48, 93, 102, 1
12,134,135,141,142,143,16
2. Non-magnetic film, 14, 23, 34, 49, 94, 11
3, 120, 153: Upper magnetic film, 15, 165: Protective film, 16, 25, 43, 62, 74, 75, 81, 95
a, 95b, 104, 154, 154a, 154b, 1
54c, 166: Lead, 17: Underlayer, 18: Intermediate magnetic film, 19: Reverse taper resist, 26, 26 ', 32 ...
Resist layer, 27: SiO ₂ film, 28, 156: groove, 2
9: polysilicon film, 30: magnetic insulating layer, 31: soft magnetic film, 35, 35a, 35b: amorphous film, 36,
125, 126: Hard magnetic film, 41: Shunt bias film, 42: Magnetoresistance effect film, 44: High coercive force fine particle layer,
45: magnetic insulating film, 46: silicon substrate, 50: soft magnetic material, 51: soft magnetic yoke, 52: element portion, 53: recording coil, 61: upper shield layer, 63: lower shield layer, 64: insulating Layers, 71, 72, 103, 131, 13
2,133,137,138,139,140,16
1,163: magnetic film, 73: conductive film, 76: flux guide, 77: non-magnetic conductive film, 78: shield layer, 7
9, 80 terminal, 83 recording medium, 91, 101 ferromagnetic film, 92a end, 96 hard magnetic film, 136a, 1
36b: permanent magnet, 144a, 144b: perpendicular magnetization film.

──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Reiko Kondo 1st station, Komukai Toshiba-cho, Saiwai-ku, Kawasaki-shi, Kanagawa Prefecture (72) Inventor Hitoshi Iwasaki Komukai-Toshiba-cho, Saiwai-ku, Kawasaki-shi, Kanagawa No. 1 Toshiba Research and Development Center Co., Ltd. (56) References JP-A-5-291037 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) G11B 5/39

Claims (5)

(57) [Claims] A magnetic field detection film that substantially responds to a signal magnetic field; a magnetization fixed film whose magnetization direction is substantially maintained even when a signal magnetic field is applied; A magnetoresistive element including a non-magnetic film sandwiched therebetween, and connected to the magnetoresistive element,
In using a thin-film magnetic head having a pair of leads for supplying a sense current for detecting a change in resistance of the magnetoresistive element to the magnetoresistive element, a magnetic field generated in the magnetization fixed film by the sense current as conductive direction is substantially the same as the magnetization direction of the magnetization pinned film
A method of using a thin-film magnetic head, characterized in that a sense current having a current density of 10 ⁶ A / cm ² or more is supplied. 2. A magnetic field detection film that substantially responds to a signal magnetic field, a magnetization fixed film whose magnetization direction is substantially maintained even when a signal magnetic field is applied, and a magnetic field detection film and a magnetization fixed film. A magnetoresistive element including a non-magnetic film sandwiched therebetween, and connected to the magnetoresistive element,
In using a thin-film magnetic head having a pair of leads for supplying a sense current for detecting a change in resistance of the magnetoresistive element to the magnetoresistive element, a magnetic field generated in the magnetization fixed film by the sense current as conductive direction is substantially the same as the magnetization direction of the magnetization pinned film
A method of using a thin-film magnetic head, characterized in that a sense current having a current density of 10 ⁶ to 10 ⁷ A / cm ² is applied . 3. A has been antiferromagnetic film is provided in contact with the magnetization pinned layer, according to claim 1 or 2, wherein the magnetization pinned layer and the antiferromagnetic film is characterized by being exchange-coupled How to use thin film magnetic head. 4. The use of the thin-film magnetic head according to claim 1 or 2 magnetization direction of the magnetic field detecting film and the magnetization pinned layer when the signal magnetic field is zero, characterized in that the substantially orthogonal. Wherein said magneto-resistive element is embedded in a magnetic gap layer, 1 use of thin-film magnetic head according to claim 1 or 2, characterized in that it is sandwiched between a pair of shield layers.